CN109932870A - Measurement method, measuring device, exposure device and article manufacturing method - Google Patents
Measurement method, measuring device, exposure device and article manufacturing method Download PDFInfo
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- CN109932870A CN109932870A CN201811521277.3A CN201811521277A CN109932870A CN 109932870 A CN109932870 A CN 109932870A CN 201811521277 A CN201811521277 A CN 201811521277A CN 109932870 A CN109932870 A CN 109932870A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
- G03F7/706—Aberration measurement
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
This disclosure relates to measurement method, measuring device, exposure device and article manufacturing method.Measurement method includes the 1st process, the shooting area that the 1st pattern with multiple 1st labels is transferred to substrate is exposed, on one side by do not generate with adjacent shooting area it is duplicate in a manner of be staggered respectively in the row direction and the column direction while carries out it is multiple, to be respectively formed multiple 1st patterns in the row direction and the column direction；2nd process, the shooting area that 2nd pattern of multiple peripheries label with multiple 2nd labels and positioned at the periphery of multiple 2nd label is transferred to substrate is exposed, it carries out while being staggered respectively in the row direction and the column direction in such a way that a part of region for making adjacent shooting area is duplicate repeatedly, to be respectively formed multiple 2nd patterns in the row direction and the column direction；And the 3rd process, mark mutual bias to find out distortion according to the periphery in the bias and a part of region of the 1st label and the 2nd label that are transferred to substrate.
Description
Technical field
The measurement side of the distortion of the distortion for the picture that substrate is projected to via projection optical system is indicated the present invention relates to measurement
Method, measuring device, exposure device and article manufacturing method.
Background technique
It discloses to use in Japanese Unexamined Patent Publication 2004-063905 bulletin (patent document 1) and is formed in the more of test mask
A major tick marks and multiple secondary scale marks find out the gimmick of the distortion of the projection optical system of exposure device.In addition,
The label for solving to generate in the implementation process of this method is disclosed in Japanese Unexamined Patent Publication 2011-35009 bulletin (patent document 2)
Between relative distance ongoing change caused by distortion measurement precision decline gimmick.
(1) measurement method of distortion disclosed in Patent Document 1
In the measurement method, for example, the 1st label and the 2nd label are secondary scale mark corresponding with each pattern and master
Scale mark.In the 1st process, m will be configured with as (a) of Fig. 71Row n1Arrange (m in the figure1=n1=3) the 1st label
10 shooting area carries out m as (b) of Fig. 72Row n2Column exposure (m in the figure2=n2=2).
Next, m will be configured with as (c) of Fig. 7 in the 2nd process2Row n2Column have and m1Row n1The 1st of column
The shooting area of 2nd label 11 at the identical interval of label 10 carries out m as (d) of Fig. 71Row n1Column exposure.N=is generated as a result,
m1×n1×m2×n2A overlapping mark.
Later, the bias for measuring the overlapping mark of generation calculates distortion according to the bias.
(2) measurement method of distortion disclosed in Patent Document 2
Measurement method of the measurement method based on patent document 1.In the measurement method, before the implementation of the 2nd process, make
For the 3rd process, m will be arranged with2Row n2The shooting area of 2nd label 11 of column exposes 1 time.In addition, making after the implementation of the 2nd process
For the 4th process, m will be arranged with2Row n2The shooting area of 2nd label 11 of column exposes 1 time.In turn, it as the 5th process, will be arranged with
With m2Row n2The shooting area exposure of 3rd label of the identical quantity of the 2nd label 11 and identical interval of column is twice.
Next, measuring the (m by being formed in the 3rd process and the 4th process2×n2× 2) it a 2nd marks and in the 5th process
(the m of middle formation2×n2× 2) (the m that a 3rd label is formed2×n2× 2) bias of a overlapping mark.Later, according to measurement
Bias out, thus it is speculated that the mutual relative position variation of the label in each exposure shooting area of the 2nd process.In turn, by the supposition
The deviation that the mutual relative position variation of label out is obtained with the overlapping mark generated from the 1st process and the 2nd process
Amount calculates distortion together.
Existing technical literature
Patent document
Patent document 1: Japanese Unexamined Patent Publication 2004-063905 bulletin
Patent document 2: Japanese Unexamined Patent Publication 2011-035009 bulletin
Summary of the invention
In the distortion measurement method documented by patent document 1, with the mutual relative position of multiple secondary scale marks and
The mutual relative position of multiple major tick marks be it is constant premised on condition.In patent document 2, master calibration mark is described
Remember that the variation of mutual relative position can not be ignored, and need to take some countermeasures, but in the distortion measurement method, with opposite position
The variation set has certain trend and is able to carry out and is speculated as precondition.
But marking the ongoing change of mutual relative position is since the exposure generated in exposure process is hot, throws
The deformation of shadow system, mounting table the various main causes such as motor heat caused by, include a large amount of random element, so being difficult to
Precisely speculate.Thus, in previous measurement method, due to marking the variation of mutual relative position, distortion
Measurement error increases, and is unable to get good measurement accuracy.
The purpose of the present invention is to provide the advantageous measurement methods of reduction for example for the measurement error of distortion.
1st aspect according to the present invention, provides a kind of measurement method, and measurement indicates to project to base via projection optical system
The distortion of the distortion of the picture of plate, the measurement method are characterized in that, comprising: the 1st process, it will be being configured at the projection optics
The object plane of system, be arranged at predetermined intervals respectively in the row direction and the column direction it is multiple 1 label the 1st figures
Case be transferred to the substrate shooting area exposure, on one side by do not generate with it is adjacent shooting area it is duplicate in a manner of in the line direction
And it is staggered and carries out on one side repeatedly, to be respectively formed on the line direction and the column direction respectively on the column direction
Multiple 1st patterns；2nd process, by be configured at the object plane, have on the line direction and the column direction
It is marked respectively with scheduled spaced multiple 2nd labels and positioned at multiple peripheries on the periphery of multiple 2nd label
The 2nd pattern be transferred to the substrate shooting area exposure, on one side by make it is adjacent shooting area a part of region it is duplicate in a manner of
It is staggered and carries out on one side repeatedly, thus in the line direction and the column side respectively on the line direction and the column direction
It is respectively formed multiple 2nd patterns upwards；And the 3rd process, according to be transferred to the 1st label of the substrate with it is described
The periphery in the bias and a part of region of 2nd label marks mutual bias, finds out the distortion.
It is according to the present invention 2nd aspect, a kind of measuring device is provided, have processing unit, the processing unit be indicated via
Projection optical system projects to the measurement of the distortion of the distortion of the picture of substrate, and the measuring device is characterized in that, the processing
Portion is handled as follows: by the object plane for being configured at the projection optical system, have and in the row direction and the column direction divide
1st pattern of multiple 1st labels not being arranged at predetermined intervals is transferred to the shooting area exposure of the substrate, on one side not produce
The raw duplicate mode with adjacent shooting area is staggered respectively on the line direction and the column direction to be carried out repeatedly on one side, from
And the processing of multiple 1st patterns is respectively formed on the line direction and the column direction；It will be being configured at the object
Face, have on the line direction and the column direction respectively with it is described it is scheduled it is spaced it is multiple 2 label and
It is exposed positioned at the shooting area that the 2nd pattern of multiple peripheries label on the periphery of multiple 2nd label is transferred to the substrate, on one side
It is staggered respectively on one side on the line direction and the column direction in a manner of keeping a part of region in adjacent shooting area duplicate
It carries out repeatedly, to be respectively formed the processing of multiple 2nd patterns on the line direction and the column direction；And root
According to the week in the bias and a part of region of the 1st label and the 2nd label that are transferred to the substrate
Side marks mutual bias, finds out the processing of the distortion.
3rd aspect according to the present invention, provides a kind of exposure device, is exposed via projection optical system to substrate,
The exposure device is characterized in that, comprising: mounting table keeps the substrate；The measuring device of above-mentioned 2nd aspect, via institute
Projection optical system is stated, the pattern of mask is projected to the substrate for being held in the mounting table, measures the projection optical system
Distortion；And control unit, it is controlled in a manner of reducing the distortion measured by the measuring device and the substrate is exposed
The exposure-processed of light.
4th aspect according to the present invention, provides a kind of article manufacturing method for manufacturing article, the spy of the article manufacturing method
Sign is, comprising: the process being exposed using exposure device to substrate；The process for making the substrate being exposed develop；With
And the process from article described in the developed substrate manufacture, the exposure device be via projection optical system to substrate into
The exposure device of row exposure, comprising: mounting table keeps the substrate；Measuring device will be covered via the projection optical system
The pattern of mould projects to the substrate for being held in the mounting table, measures the distortion of the projection optical system；And control unit, with
The mode for reducing the distortion measured by the measuring device controls the exposure-processed being exposed to the substrate, the measurement
Device is the measuring device with processing unit, which is indicated the picture that substrate is projected to via the projection optical system
Distortion distortion measurement, the processing unit is handled as follows: by the object plane for being configured at the projection optical system,
The 1st pattern with multiple 1st labels being arranged at predetermined intervals respectively in the row direction and the column direction is transferred to described
The shooting area of substrate exposes, on one side by do not generate with adjacent shooting area it is duplicate in a manner of in the line direction and the column side
It is staggered and carries out on one side repeatedly, to be respectively formed multiple described 1 on the line direction and the column direction respectively upwards
The processing of pattern；By be configured at the object plane, have on the line direction and the column direction respectively with described pre-
The 2nd pattern transfer of fixed spaced multiple 2nd labels and multiple peripheries label positioned at the periphery of multiple 2nd label
To the substrate shooting area expose, on one side by make it is adjacent shooting area a part of region it is duplicate in a manner of the line direction with
And it is staggered and carries out on one side repeatedly, to be respectively formed on the line direction and the column direction more respectively on the column direction
The processing of a 2nd pattern；And the bias according to the 1st label and the 2nd label for being transferred to the substrate
Mutual bias is marked with the periphery in a part of region, finds out the processing of the distortion.
According to the present invention, such as it is capable of providing measurement method advantageous for the reduction of the measurement error of distortion.
Detailed description of the invention
Fig. 1 is the figure for showing the structure of the exposure device in embodiment.
Fig. 2 is the figure for showing the example of label for the mask for being configured at the measurement for distortion.
Fig. 3 is the flow chart for showing the distortion measurement processing in embodiment.
Fig. 4 is the figure for illustrating the distortion measurement processing in embodiment.
Fig. 5 is the figure for showing the example for the overlapping mark for being formed in substrate.
Fig. 6 is the figure for illustrating the distortion measurement processing in the 2nd embodiment.
Fig. 7 is the figure for illustrating previous distortion measurement method.
(description of symbols)
40: exposure device；41: light source；42: lamp optical system；45: projection optical system；46: substrate-placing platform；47:
Test section；48: mask；49: substrate；50: control unit.
Specific embodiment
Hereinafter, explaining embodiments of the present invention in detail referring to attached drawing.In addition, the following embodiments and the accompanying drawings is merely representative of
The specific example of implementation of the invention, the present invention is not limited to the following embodiments and the accompanying drawings.In addition, the following embodiments and the accompanying drawings it
The combined whole of the feature of middle explanation is not necessarily required in order to solve the problem of the present invention.
<the 1st embodiment>
Fig. 1 is the figure for showing the outline structure of exposure device of present embodiment.Exposure device 40 is via projection optics
The offset printing device that system is exposed substrate, including measurement indicate via projection optical system project to substrate as
The measuring device of the distortion of distortion.In addition, here, the optical axis direction of projection optical system 45 is set as Z axis, will along with it just
The direction of the substrate surface of friendship is set as the direction XY.
Mask mounting table 43 keeps the mask 48 as master.Mask 48 is configured at projection optics using mask mounting table 43
The object plane of system 45.Substrate-placing platform 46 is configured to keep 49 ground of substrate mobile.Lamp optical system 42 is using from light
The light in source 41 illuminates the mask 48 kept by mask mounting table 43.
Barn door 44 using by the scheduled region in mask 48 as limiting from illumination optical system in a manner of 1 shooting area
The light of system 42.In Fig. 1, barn door 44 is configured at the lower part of mask mounting table 43, but can also be configured at illumination optical system
The structure of the inside of system 42.The picture of the pattern for the mask 48 that the projection of projection optical system 45 is illuminated by lamp optical system 42 or
The picture of label.
Test section 47 detects the label being formed on substrate for example including microscope.Control unit 50 controls exposure device 40
In each section movement.Control unit 50 can be constituted as the computer installation for including CPU51 and memory 52.
CPU51 executes various controls according to the control program 52d for being stored in memory 52.Memory 52 is preserved for distorting
The measurement processing program 52a of measurement.CPU51 is by executing measurement processing program 52a, thus control base board mounting table 46 and detection
Portion 47 measures the label on substrate 49, calculates amount of distortion and corrected value 52b.Thus, the measuring device in present embodiment can
It is made of test section 47 and control unit 50 (processing unit).Corrected value 52b is stored in memory 52.In addition, exposure task 52c is also protected
It is stored in memory.Exposure task 52c can include distortion measurement when exposure-processed and device production when exposure-processed in
Various parameters.Control unit 50 controls the exposure-processed being exposed to substrate in a manner of reducing the distortion measured.
Next, illustrating the mask 48 of the measurement for distortion referring to Fig. 2.Here, X-direction is set as line direction the (the 1st
Direction), the Y-direction orthogonal with X-direction is set as column direction (the 2nd direction).As shown in Fig. 2, mask 48 is configured with multiple 1st marks
Note 1, multiple 1st label 1 in the X direction at predetermined intervals Px1, Py1 is configured to m at predetermined intervals in the Y direction1Row
n1Column.In the example in figure 2, it is set as m1=n1=3.Matched in addition, mask 48 is configured with interval identical with multiple 1st labels 1
The m set2Row n2Above multiple 2nd labels 2 of column.In the example in figure 2, it is set as m2=n2=2.In addition, multiple 2nd labels 2
Allocation position is set as any among the exposed surface of mask 48.In the present embodiment, the 1st label 1 and the 2nd label 2 are divided
It is not set as secondary scale mark and major tick marks are illustrated.
In addition, mask 48 is configured with multiple peripheries label positioned at the periphery of multiple 2nd labels 2.In the present embodiment,
Multiple periphery labels can include the 3rd label the 3, the 4th mark for being configured at each different position on periphery of multiple 2nd labels 2
Remember the 4, the 5th label 4 and the 6th label 6.For example, mask 48 is configured with m3A 3rd label 3 and m3A 4th label 4, the m3It is a
4th label 4 is from these m3A 3rd label 3, which rises, distinguishes in the Y direction (Py1 × n at certain intervals2) configuration.In turn, mask 48
Configured with m4A 5th label 5 and m4A 6th label 6, the m4A 6th label 6 is from these m4A 5th label 5 rises respectively in the side X
Upward (Px1 × m at certain intervals2) configuration.m3The configuration method and allocation position and m of a 3rd label 34A 5th label
5 configuration method and allocation position is set as any.In the present embodiment, it is set as m3=m4=4.In addition, about m3A 3rd mark
The configuration method and m of note 34The configuration method of a 5th label 5 is set as in the x, y direction respectively across the 2 of certain interval
The column configuration of row 2.
Here, narration m1、m2、m3、m4、n1、n2Relationship.In the present embodiment, by m1And m2It is set as with m1>m2's
The relatively prime natural number of relationship.Similarly, by n1And n2It is set as with n1>n2Relationship relatively prime natural number.In addition, m3And
m4It is set to natural number.In addition, as described above, in the present embodiment, being set as m1=n1=3, m2=n2=2, m3=m4
=4.
In addition, in the present embodiment, so that connection m3The center of a 3rd label 3 and m3The center of a 4th label 4
The central point and m of the straight line of position2×n2The mode of the center overlapping of a 2nd label 2, configures m3A 3rd label 3 and m3
A 4th label 4.Similarly, in the present embodiment, so that connection m4The center of a 5th label 5 and m4A 6th label 6
Center straight line central point and m2×n2The mode of the center overlapping of a 2nd label 2, configures m4A 5th label
5 and m4A 6th label 6.In addition, the 3rd label 3 and the 4th label 4 are set as major tick marks, the 5th label 5 and the 6th label 6 are set as
Secondary scale mark.In turn, in the present embodiment, so that the 3rd label 3 and the 5th label 5 is formed as the label of identical pattern, make
4th label 4 and the 6th label 6 are formed as the label of identical pattern.
In addition, in the present embodiment, by the 1st label 1, the 2nd label 2, the 3rd label 3, the 4th label 4, the 5th label 5 with
And the 6th label 6 be configured on identical mask 48.But it is also possible to respectively prepare configured with the 1st label 1 the 1st mask and
The 2nd mask configured with the 2nd label 2, the 3rd label 3, the 4th label 4, the 5th label 5 and the 6th label 6.In addition, in this implementation
In mode, as described later, the 2nd label 2 is Box-in-Box (box in box) as being transferred in the frame of the 1st label 1
Pattern, the 3rd label 3 has the pattern of Box-in-Box in frame as being transferred to the 4th label 4.Similarly,
5 labels 5 have the pattern of Box-in-Box in the frame as being transferred to the 6th label 6.It is however not limited to this, as long as
For be capable of measurement markers relative position pattern.
Next, successively illustrating distortion measurement method.Fig. 3 is the flow chart for showing distortion measurement processing.With the flow chart
Corresponding program bag is contained in measurement processing program 52a, is executed by control unit 50 (CPU51).
In S101, control unit 50 exposes the shooting area for the 1st pattern with multiple 1st labels 1 being transferred to substrate,
On one side by do not generate with adjacent shooting area it is duplicate in a manner of be staggered respectively in the row direction and the column direction while carries out it is multiple.
It is respectively formed multiple 1st patterns in the row direction and the column direction as a result,.Specifically, as shown in (a) of Fig. 4, control unit 50
Barn door 44 is driven, so as to have the m for being configured at mask 481Row n11st pattern of the 1st label 1 of column is exposed.Then, as schemed
Shown in 4 (b), the drive substrate mounting table 46 on the direction XY of control unit 50 exposes the shooting area for the 1st pattern being transferred to substrate
Light repeats (m2×n2) secondary.(m as a result,1×m2) row (n1×n2) column the 1st label 1 be formed in substrate (the 1st layer of exposure-processed
(the 1st process)).
In S102, control unit 50 will be the 2nd marked with multiple 2nd labels 2 and positioned at multiple peripheries on its periphery
Pattern is transferred to the shooting area exposure of substrate, column direction of being expert in a manner of keeping a part of region in adjacent shooting area duplicate on one side
Upper be staggered respectively carries out repeatedly on one side.It is expert on column direction as a result, and is respectively formed multiple 2nd patterns.Specifically, such as Fig. 4
(c) shown in, control unit 50 drive barn door 44, with can to include m2Row n2The 2nd label 2, the m of column3A 3rd label 3, m3It is a
4th label 4, m4A 5th label 5 and m4The region of a 6th label 6 is exposed.Then, such as (d) of Fig. 4 and Fig. 5 institute
Show, the shooting area exposure for the 2nd pattern being transferred to substrate is repeated (m by control unit 501×n1) secondary.Fig. 5 show through this process and
It is formed in the example of the overlapping mark of substrate 49.This indicate it is identical with (d) of Fig. 4 as a result, but in Fig. 5, for ease of reason
Solution, shows the image for only remaining the substrate of overlapping mark 30, overlapping mark 31 and overlapping mark 32.((m as a result,1-1)
×n1) a 1st repeat region R1 and (m1×(n1- 1)) a 2nd repeat region R2 is formed in substrate.Then, control unit 50 makes (m1
×m2) row (n1×n2) column the 2nd label 2 be formed on the 1st label 1.In addition, control unit 50 makes m3A 3rd label 3 and m3It is a
4th label 4 is formed in each repeat region of the 1st repeat region R1.In turn, control unit 50 makes m4A 5th label 5 and m4
A 6th label 6 is formed in each repeat region (the 2nd layer of exposure-processed (the 2nd process)) of the 2nd repeat region R2.
In addition, being not involved in development treatment between S101 and the exposure-processed of S102.Alternatively, it is also possible to exchange S101 and
The processing sequence of S102.
In S103, control unit 50 transfer out substrate 49 and using exposure device outside developing machine develop.As a result,
Form the m based on the 1st label 1 and the 2nd label 2 being exposed in S102 that are exposed in S1011×n1×m2×n2A weight
Folded label 30.In addition, forming the (m based on the 3rd label 3 and the 4th label 4 being exposed in S1023×(m1-1)×n1) a weight
Folded label 31 and the (m based on the 5th label 5 and the 6th label 64×m1×(n1- 1)) a overlapping mark 32.
In S104, control unit 50 measures the overlapping mark for being formed in substrate 49 using test section 47.In addition, the measurement
Can also without using being equipped on the test section 47 of exposure device 40, and using exposure device outside measuring appliance carry out.
In S105, control unit 50 marks the bias and above-mentioned one with the 2nd label according to the be transferred to substrate the 1st
Periphery in partial region marks mutual bias, finds out distortion (the 3rd process).Specifically, control unit 50 will be above-mentioned heavy
The measured value of folded label is updated to equation shown in formula 1 to formula 25 described below, solves equation.
[formula 1]
δx(n)=dx1(i)-dx2(j)+ex1(k)-ex2(l)-Y1(i)t1(k)+Y2(j)tx2(l)-X2(j)mx2(l)+εx
(n) (formula 1)
[formula 2]
δy(n)=dy1(i)-dy2(j)+ey1(k)-ey2(l)+X1(i)t1(k)-X2(j)ty2(l)-Y2(j)my2(l)+εy
(n) (formula 2)
[formula 3]
δxv(p)=dx3(jv)-dx4(jv)+ex2(l)-ex2(l+m1)-Y3(jv)tx2(l)+Y4(jv)tx2(l+m1)+X3
(jv)mx2(l)-X4(jv)mx2(l+m1)+εxv(p) (formula 3)
[formula 4]
δyv(p)=dy3(jv)-dy4(jv)+ey2(l)-ey2(l+m1)+X3(jv)ty2(l)-X4(jv)ty2(l+m1)+Y3
(jv)my2(l)-Y4(jv)my2(l+m1)+εyv(p) (formula 4)
[formula 5]
δxh(q)=dx5(jh)-dx6(jh)+ex2(l)-ex2(l+1)-Y5(jh)tx2(l)+Y6(jv)tx2(l+1)+X5(jh)
mx2(l)-X6(jh)mx2(l+1)+εxh(q) (formula 5)
[formula 6]
δyh(q)=dy5(jh)-dy6(jh)+ey2(l)-ey2(l+1)+X5(jh)ty2(l)-X6(jh)ty2(l+1)+Y5(jh)
my2(l)-Y6(jv)my2(l+1)+εyh(q) (formula 6)
Here,
δx(n)、δy(n): indicating the measurement of the overlapping mark in n-th of the 1st floor exposure shooting areas and the 2nd floor exposure shooting area
Value,
dx1(i)、dy1(i): indicate i-th of distortion evaluation offset of secondary scale (the 1st label),
dx2(j)、dy2(j): indicate j-th of measurement offset of master calibration (the 2nd label),
ex1(k)、ey1(k)、t1(k): indicating arrangement error (displacement of the direction x, the shifting of the direction y in k-th of shooting area of the 1st floor
Position, the direction x and the direction y rotate jointly)
ex2(l)、ey2(l): indicate the arrangement error (displacement of the direction x, the displacement of the direction y) in first of shooting area of the 2nd floor,
tx2(l)、ty2(l)、mx2(l)、my2(l): indicating the change in shape in first of shooting area of the 2nd floor (for the rotation of the direction x
Turn, the direction y rotates, the direction x multiplying power, the direction y multiplying power, be equivalent to the variation for marking mutual relative position)
X1(i)、Y1(i): indicating the shooting area internal coordinate (label opposite with shooting district center of i-th of label of the 1st floor
Position)
X2(j)、Y2(j): indicating the shooting area internal coordinate of j-th of label of the 2nd floor
εx(n)、εy(n): indicating the quantization error caused by being rounded
δxv(p)、δyv(p): indicating the measured value of p-th of overlapping mark of the 2nd floor exposure shooting direction area y adjacent area
dx3(jv)、dy3(jv): indicate the jth of the 2nd floor exposure shooting direction area y adjacent areavThe secondary scale mark of a overlapping
The offset of (the 3rd label),
dx4(jv)、dy4(jv): indicate the jth of the 2nd floor exposure shooting direction area y adjacent areavA overlapping major tick marks
The offset of (the 4th label),
X3(jv)、Y3(jv): indicate the jth of the 2nd floor exposure shooting direction area y adjacent areavThe secondary scale mark of a overlapping (the
3 label) shooting area internal coordinate,
X4(jv)、Y4(jv): indicate the jth of the 2nd floor exposure shooting direction area y adjacent areavA overlapping major tick marks (
4 label) shooting area internal coordinate,
εxv(p)、εyv(p): indicate the quantization error caused by being rounded,
δxh(q)、δyh(q): indicate the measured value of q-th of overlapping mark of the 2nd floor exposure shooting direction area x adjacent area,
dx5(jh)、dy5(jh): indicate the jth of the 2nd floor exposure shooting direction area x adjacent areahThe secondary scale mark of a overlapping
The offset of (the 5th label),
dx6(jh)、dy6(jh): indicate the jth of the 2nd floor exposure shooting direction area x adjacent areahA overlapping major tick marks
The offset of (the 6th label),
X5(jh)、Y5(jh): indicate the jth of the 2nd floor exposure shooting direction area x adjacent areahThe secondary scale mark of a overlapping (the
5 label) shooting area internal coordinate,
X6(jh)、Y6(jh): indicate the jth of the 2nd floor exposure shooting direction area x adjacent areahA overlapping major tick marks (
6 label) shooting area internal coordinate,
εxh(q)、εyh(q): indicating the quantization error caused by being rounded.
In addition, if εx(n)、εy(n)、εxv(p)、εyv(p)、εxh(q)、εyh(q) sufficiently small, it can ignore that, then it is unknown
Variable becomes as follows.
·(m1×n1) a dx1(i)、dy1(i)、ex2(l)、ey2(l)、tx2(l)、ty2(l)、mx2(l)、my2(l),
·(m2×n2) a dx2(j)、dy2(j)、ex1(k)、ey1(k)、t1(k),
·m3A dxu(jv)、dyu(jv)、dxd(jv)、dyd(jv),
·m4A dxl(jh)、dyl(jh)、dxr(jh)、dyr(jh)。
Thus, the quantity of unknown number is (8 × m1×n1+5×m2×n2+4×m3+4×m4)。
On the other hand, the overlapping mark of layers 1 and 2 is formed by structure below.
·(m1×n1) a secondary scale mark i,
·(m2×n2) a major tick marks j,
·(m2×n2) a 1st floor exposure shooting area k,
·(m1×n1) a 2nd floor exposure shooting area l.
I, j, k, l of each overlapping mark of each overlapping mark are different combinations in all labels.
Next, the overlapping mark of the 2nd floor exposure shooting direction area y adjacent area is by m3A pair scale mark/master calibration
Mark jv、((m1- 1) × n1) a 2nd floor exposure shooting area l and the 2nd floor exposure shooting area l+m1The direction y adjacent area shape
At.The j of each overlapping mark of each overlapping markv, l be different combinations in all labels.
In turn, the overlapping mark of the 2nd floor exposure shooting direction area x adjacent area is by m4A pair scale mark/master calibration mark
Remember jh、(m1×(n1- 1)) direction the x adjacent area of a 2nd floor exposure shooting area l and the 2nd floor exposure shooting area l+1 are formed.Respectively
The j of each overlapping mark of overlapping markh, l be different combinations in all labels.
That is, formula 1 to formula 6 becomes (2 × (m altogether1×n1×m2×n2)+2×m3×(m1- 1) × n1+2×m4
×m1×(n1- 1)) a simultaneous equations.
As long as the simultaneous equations become indefinite at this point, adding the condition of formula 7 as shown below to formula 25, can obtain
To making εx(n)、εy(n)、εxv(p)、εyv(p)、εxh(q)、εyh(q) quadratic sum becomes the smallest solution.
[formula 7]
[formula 8]
dx3(jv(the j of)=0v=1,2 ..., m3) (formula 9)
dy3(jv(the j of)=0v=1,2 ..., m3) (formula 10)
dx4(jh(the j of)=0h=1,2 ..., m4) (formula 11)
dy4(jh(the j of)=0h=1,2 ..., m4) (formula 12)
[formula 9]
[formula 10]
tx2(1)=0 (formula 18)
ty2(1)=0 (formula 19)
mx2(1)=0 (formula 20)
my2(1)=0 (formula 21)
[formula 11]
Here, Cx(l)、Cy(l) the arrangement coordinate (bat opposite with plate center in first of exposure shooting area of the 2nd floor is indicated
Take the photograph district center position).
When solving above-mentioned simultaneous equations, distortion evaluation amount dx is not only found out1、dy1, also while finding out the following value.
The arrangement error ex of mounting table1、ey1、t1、ex2、ey2,
The change in shape tx in the exposure shooting area of the 2nd floor2、ty2、mx2、my2,
Error dx on fabrication mask2、dy2、dx3、dy3、dx4、dy4、dx5、dy5、dx6、dy6。
Thus, it will not become comprising the shape in the exposure shooting area of mounting table arrangement error and the 2nd floor in distortion evaluation amount
Change.
<the 2nd embodiment>
Referring to Fig. 6, as the 2nd embodiment, illustrate to be replaced with the 2nd label the 3rd label, the 4th mark, the 5th mark and
The method of 6th label.
As shown in (a) of Fig. 6, it is based on m1Arrange n1The 1st floor exposure shooting area of 1st label 1 of column and the 1st embodiment phase
Together, by m13 are set as, by n1It is set as 3.
As shown in (b) of Fig. 6, by (m2+ 2) row (n2+ 2) the 2nd label 2 arranged is set as the 2nd floor exposure shooting area.Here, with
1st embodiment similarly, m2It is set as 2, n2It is set as 2.In addition, in close to (m2+ 2) row (n2+ 2) in the 2nd label 2 arranged
The m of the position of the heart2Row n22nd label 2 of column is equivalent to the 2nd label 2 of the 1st embodiment.
Next, the exposure shooting area of the exposure shooting area of the 1st floor and the 2nd floor is exposed respectively as the 1st embodiment
Light m2Row n2Column, m1Row n1Column form (m1×n1×m2×n2) a overlapping mark.It, will be as but as the 1st embodiment
The secondary scale mark of each overlapping mark and the center of major tick marks overlap each other such ideal position as target position and
When being exposed, it is possible to which the major tick marks in the shooting area from the 2nd different floor are blocked and are unable to measure.Thus, such as
Shown in (c) of Fig. 6, the exposure shooting area of each 1st floor is directly set as ideal position, and the exposure of each 2nd floor shoots area from ideal bit
It sets along each different direction offset certain distance and exposes.Thereby, it is possible to avoid from different the 2nd layer of exposure shootings
The major tick marks in area are mutually blocked.(m1×n1×m2×n2) a overlapping mark respectively become based on 1 secondary scale mark and
The label group of 1 or more major tick marks, using them as the measurement object in present embodiment.
Then, from (m1×n1×m2×n2) a label group each label group, measure 1 secondary scale mark and 1 with
On major tick marks all major tick marks each major tick marks offset, calculate distortion.
<embodiment of article manufacturing method>
Article manufacturing method in embodiments of the present invention is for example suitable for the microdevices such as manufacturing semiconductor devices or tool
There is the element and other items of microstructure.The article manufacturing method of present embodiment includes using (the exposure of above-mentioned offset printing device
Device, imprinting apparatus, drawing apparatus etc.) pattern of master is transferred to the process of substrate and in this process transferred with figure
The process that the substrate of case is processed.In turn, such manufacturing method include other well known process (oxidation, film forming, vapor deposition,
Doping, planarization, etching, resist removing, cutting, bonding, encapsulation etc.).The article manufacturing method of present embodiment compared to
Previous method is advantageous in terms of at least one in the performance of article, quality, productivity, production cost.
Claims (15)
1. a kind of measurement method, measurement indicates the distortion that the distortion of the picture of substrate is projected to via projection optical system, the survey
Amount method is characterized in that, comprising:
1st process, by the object plane for being configured at the projection optical system, have in the row direction and the column direction respectively with
It is scheduled it is spaced it is multiple 1 label the 1st patterns be transferred to the substrate shooting area exposure, on one side with do not generate with
The duplicate mode in adjacent shooting area is staggered respectively on the line direction and the column direction to be carried out repeatedly on one side, thus
Multiple 1st patterns are respectively formed on the line direction and the column direction；
2nd process, by be configured at the object plane, have on the line direction and the column direction respectively with described pre-
The 2nd pattern transfer of fixed spaced multiple 2nd labels and multiple peripheries label positioned at the periphery of multiple 2nd label
To the substrate shooting area expose, on one side by make it is adjacent shooting area a part of region it is duplicate in a manner of the line direction with
And it is staggered and carries out on one side repeatedly, to be respectively formed on the line direction and the column direction more respectively on the column direction
A 2nd pattern；And
3rd process, according to the bias and described a part of the 1st label and the 2nd label for being transferred to the substrate
The periphery in region marks mutual bias, finds out the distortion.
2. measurement method according to claim 1, which is characterized in that
3rd label of each different position on periphery of the multiple periphery label including being configured at the multiple 2nd label,
4th label, the 5th label and the 6th label,
In the 2nd process, a part in area is shot with adjacent in a column direction two in a part of region
Duplicate 1st repeat region formed it is described 3rd label and it is described 4th label, in a part of region in the row direction
A part of duplicate 2nd repeat region in two adjacent shooting areas forms the mode of the 5th label and the 6th label,
Multiple 2nd patterns are respectively formed on the line direction and the column direction,
In the 3rd process, according to the 1st label for being formed in the substrate in the 1st process and the described 2nd
It is formed in bias i.e. the 1st bias of the 2nd label of the substrate in process, is formed in by the 2nd process
The described 3rd of 1st repeat region is marked with bias i.e. the 2nd bias of the 4th label and by the described 2nd
Process and be formed in the 2nd repeat region it is described 5th label with it is described 6th label bias i.e. the 3rd bias, find out
The distortion.
3. measurement method according to claim 2, which is characterized in that
3rd label of each different position on periphery of the multiple periphery label including being configured at the multiple 2nd label,
4th label, the 5th label and the 6th label,
By m1And m2It is set as with m1>m2Relationship relatively prime natural number,
By n1And n2It is set as with n1>n2Relationship relatively prime natural number and
By m3And m4When being set to natural number,
It, will be with m in the 1st process1Row n1The 1st pattern of the 1st label of column is transferred to the substrate
It shoots area's exposure and repeats (m2×n2) secondary, thus by (m1×m2) row (n1×n2) column it is described 1st label be formed in the substrate,
In the 2nd process,
The shooting area exposure for 2nd pattern being transferred to the substrate is repeated into (m1×n1) secondary, thus by ((m1- 1) × n1)
A 1st repeat region and (m1×(n1- 1)) a 2nd repeat region is formed in the substrate, and
By (m1×m2) row (n1×n2) column it is described 2nd label, the 1st repeat region each repeat region in m3It is a
3rd label and m3M in each repeat region of a 4th label and the 2nd repeat region4A described
5 labels and m4A 6th label is formed in the substrate,
In the 3rd process,
For the 2nd mark for marking and being formed in the 2nd process using the formed in the 1st process the described 1st
Remember and be formed in the (m of the substrate1×m2×n1×n2) a overlapping mark each overlapping mark, find out the described 1st and deviate
Amount,
It is marked for using the 3rd label and the described 4th for being formed in the 1st repeat region by the 2nd process
(the m formed3×(m1- 1) × n1) a overlapping mark each overlapping mark, find out the 2nd bias,
It is marked for using the 5th label and the described 6th for being formed in the 2nd repeat region by the 2nd process
(the m formed4×m1×(n1- 1)) each overlapping mark of a overlapping mark finds out the 3rd bias.
4. measurement method according to claim 3, which is characterized in that
So that connection m3The center of a 3rd label and m3The central point of the straight line of the center of a 4th label
With m2×n2The mode of the center overlapping of a 2nd label, configured with the 3rd label and the 4th label.
5. measurement method according to claim 3, which is characterized in that
So that connection m4The center of a 5th label and m4The central point of the straight line of the center of a 6th label
With m2×n2The mode of the center overlapping of a 2nd label, configured with the 5th label and the 6th label.
6. measurement method according to claim 3, which is characterized in that
3rd label and the 5th label are the labels of identical pattern, and the 4th label and the 6th label are identical
Pattern label.
7. measurement method according to claim 2, which is characterized in that
1st label, the 2nd label, the 3rd label, the 4th label, the 5th label and the 6th mark
Note is configured at identical mask.
8. measurement method according to claim 2, which is characterized in that
1st label is configured at the 1st mask, the 2nd label, the 3rd label, the 4th label, the 5th label
And the 6th label is configured at 2nd mask different from the 1st mask.
9. measurement method according to claim 2, which is characterized in that
It is described 2nd label have as described in being transferred to the 1st mark frame in pattern.
10. measurement method according to claim 2, which is characterized in that
It is described 3rd label have as described in being transferred to the 4th mark frame in pattern.
11. measurement method according to claim 2, which is characterized in that
It is described 5th label have as described in being transferred to the 6th mark frame in pattern.
12. measurement method according to claim 2, which is characterized in that
The 3rd label, the 4th label, the 5th label and the 6th label are replaced with the 2nd label.
13. a kind of measuring device, has processing unit, which is indicated the picture that substrate is projected to via projection optical system
Distortion distortion measurement, the measuring device is characterized in that,
The processing unit is handled as follows:
By the object plane for being configured at the projection optical system, have in the row direction and the column direction respectively with scheduled
It is exposed every the shooting area that the 1st pattern of multiple 1st labels of arrangement is transferred to the substrate, on one side not generate and adjacent shooting
The duplicate mode in area is staggered respectively on the line direction and the column direction to be carried out on one side repeatedly, thus in the row side
To and the column direction on be respectively formed the processing of multiple 1st patterns；
By be configured at the object plane, have on the line direction and the column direction respectively with the scheduled interval
Multiple 2nd labels of arrangement and the 2nd pattern of multiple peripheries label positioned at the periphery of multiple 2nd label are transferred to the base
The shooting area of plate exposes, on one side in the line direction and the column in a manner of keeping a part of region in adjacent shooting area duplicate
It is staggered on direction and carries out repeatedly on one side respectively, to be respectively formed multiple described the on the line direction and the column direction
The processing of 2 patterns；And
According in the bias and a part of region of the 1st label and the 2nd label for being transferred to the substrate
The periphery marks mutual bias, finds out the processing of the distortion.
14. a kind of exposure device is exposed substrate via projection optical system, the exposure device is characterized in that, tool
Have:
Mounting table keeps the substrate；
The pattern of mask is projected to via the projection optical system and is held in institute by measuring device described in claim 13
The substrate for stating mounting table measures the distortion of the projection optical system；And
Control unit controls the exposure being exposed to the substrate in a manner of reducing the distortion measured by the measuring device
Processing.
15. a kind of article manufacturing method for manufacturing article, the article manufacturing method are characterised by comprising:
The process that substrate is exposed using exposure device；
The process for making the substrate being exposed develop；And
From the process of article described in the developed substrate manufacture,
The exposure device is the exposure device being exposed via projection optical system to substrate, comprising:
Mounting table keeps the substrate；
The pattern of mask is projected to the substrate for being held in the mounting table via the projection optical system by measuring device, is surveyed
Measure the distortion of the projection optical system；And
Control unit controls the exposure being exposed to the substrate in a manner of reducing the distortion measured by the measuring device
Processing,
The measuring device is that have the measuring device of processing unit, which is indicated throws via the projection optical system
Shadow to substrate picture distortion distortion measurement,
The processing unit is handled as follows:
By the object plane for being configured at the projection optical system, have in the row direction and the column direction respectively with scheduled
It is exposed every the shooting area that the 1st pattern of multiple 1st labels of arrangement is transferred to the substrate, on one side not generate and adjacent shooting
The duplicate mode in area is staggered respectively on the line direction and the column direction to be carried out on one side repeatedly, thus in the row side
To and the column direction on be respectively formed the processing of multiple 1st patterns；
By be configured at the object plane, have on the line direction and the column direction respectively with the scheduled interval
Multiple 2nd labels of arrangement and the 2nd pattern of multiple peripheries label positioned at the periphery of multiple 2nd label are transferred to the base
The shooting area of plate exposes, on one side in the line direction and the column in a manner of keeping a part of region in adjacent shooting area duplicate
It is staggered on direction and carries out repeatedly on one side respectively, to be respectively formed multiple described the on the line direction and the column direction
The processing of 2 patterns；And
According in the bias and a part of region of the 1st label and the 2nd label for being transferred to the substrate
The periphery marks mutual bias, finds out the processing of the distortion.
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| JP2017242227A JP6978926B2 (en) | 2017-12-18 | 2017-12-18 | Measuring method, measuring device, exposure device, and article manufacturing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113050394A (en) * | 2019-12-26 | 2021-06-29 | 佳能株式会社 | Exposure apparatus and article manufacturing method |
| CN113267966A (en) * | 2020-02-14 | 2021-08-17 | 佳能株式会社 | Measuring method, exposure method, article manufacturing method, and storage medium |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1479073A (en) * | 2002-07-30 | 2004-03-03 | 佳能株式会社 | Distortion measurement method and exposure equipment |
| JP2011035009A (en) * | 2009-07-29 | 2011-02-17 | Canon Inc | Method of measuring distortion and movement characteristics of substrate stage, exposure apparatus, and device manufacturing method |
| CN102466977A (en) * | 2010-11-11 | 2012-05-23 | 上海微电子装备有限公司 | Mark structure used for measuring distortion of projection object lens and its method |
| US20160139510A1 (en) * | 2014-11-18 | 2016-05-19 | Canon Kabushiki Kaisha | Lithography apparatus, and method of manufacturing article |
| CN106919004A (en) * | 2015-12-25 | 2017-07-04 | 佳能株式会社 | The manufacture method of evaluation method, exposure method and article |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09166416A (en) * | 1995-12-13 | 1997-06-24 | Mitsubishi Electric Corp | Method and device for measuring amount of relative position deviation of reticle pattern |
| WO1999050712A1 (en) * | 1998-03-26 | 1999-10-07 | Nikon Corporation | Exposure method and system, photomask, method of manufacturing photomask, micro-device and method of manufacturing micro-device |
| JP4250252B2 (en) * | 1999-04-16 | 2009-04-08 | キヤノン株式会社 | Projection exposure apparatus, projection exposure method, and device manufacturing method using the same |
| JP3977302B2 (en) * | 2003-08-13 | 2007-09-19 | キヤノン株式会社 | Exposure apparatus, method of using the same, and device manufacturing method |
| JP4770833B2 (en) * | 2005-03-25 | 2011-09-14 | 株式会社ニコン | Shot shape measurement method, mask |
| JP6774269B2 (en) * | 2016-08-26 | 2020-10-21 | キヤノン株式会社 | Measuring method, measuring device, exposure device and manufacturing method of articles |
-
2017
- 2017-12-18 JP JP2017242227A patent/JP6978926B2/en active Active
-
2018
- 2018-12-10 KR KR1020180157844A patent/KR102437875B1/en active IP Right Grant
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1479073A (en) * | 2002-07-30 | 2004-03-03 | 佳能株式会社 | Distortion measurement method and exposure equipment |
| JP2011035009A (en) * | 2009-07-29 | 2011-02-17 | Canon Inc | Method of measuring distortion and movement characteristics of substrate stage, exposure apparatus, and device manufacturing method |
| CN102466977A (en) * | 2010-11-11 | 2012-05-23 | 上海微电子装备有限公司 | Mark structure used for measuring distortion of projection object lens and its method |
| US20160139510A1 (en) * | 2014-11-18 | 2016-05-19 | Canon Kabushiki Kaisha | Lithography apparatus, and method of manufacturing article |
| CN106919004A (en) * | 2015-12-25 | 2017-07-04 | 佳能株式会社 | The manufacture method of evaluation method, exposure method and article |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113050394A (en) * | 2019-12-26 | 2021-06-29 | 佳能株式会社 | Exposure apparatus and article manufacturing method |
| CN113267966A (en) * | 2020-02-14 | 2021-08-17 | 佳能株式会社 | Measuring method, exposure method, article manufacturing method, and storage medium |
| CN113267966B (en) * | 2020-02-14 | 2023-12-19 | 佳能株式会社 | Measuring method, exposure method, method for manufacturing article, and storage medium |
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| KR20190073274A (en) | 2019-06-26 |
| CN109932870B (en) | 2021-07-27 |
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