JP7426845B2 - Measurement method, exposure method, article manufacturing method, program and exposure device - Google Patents

Description

The present invention relates to a measurement method, an exposure method, an article manufacturing method , a program , and an exposure apparatus .

2. Description of the Related Art In the manufacture of flat panels such as liquid crystal panels and organic EL panels, and semiconductor devices, an exposure apparatus is used to transfer a pattern of an original (mask) onto a substrate coated with resist, such as a glass plate or wafer. Such exposure equipment is required to align the original pattern with high precision to the shot area on the substrate and to improve throughput (productivity), and related technology is required. It has been proposed (see Patent Documents 1 and 2).

As a technique for improving throughput, a technique for thinning out (the number of) alignment measurement marks provided in shot areas on a substrate is known. There are multiple options for techniques to thin out measurement marks. For example, the optimal thinning method and calculation algorithm are determined depending on the component to be corrected among the substrate change component and shot shape change component. The optimal thinning method and calculation algorithm involves performing a test exposure (trial printing) when starting the flat panel manufacturing process (production), and measuring the deformation component of the board and the change component of the shot shape using a mark measuring device. It is decided by that.

Special Publication No. 4-47968 Japanese Patent Application Publication No. 2006-140204

However, during the manufacturing process, the main change component of the substrate is not constant. For example, for several hours after the start of the manufacturing process, the elongation component (shot magnification) of the original plate becomes the main component. After the elongation of the original becomes stable, the elongation component of the substrate (substrate magnification) becomes the main component. As described above, since the change components of the substrate change during the manufacturing process, even if the optimal thinning method and calculation algorithm are determined according to the prior art, they are not always optimal throughout the manufacturing process.

The present invention has been made in view of the problems of the prior art, and an exemplary object thereof is to provide a measurement method advantageous for measuring measurement marks formed in shot areas on a substrate.

In order to achieve the above object, a measurement method as one aspect of the present invention is a measurement method that measures a plurality of measurement marks formed in a shot area on a substrate to which a pattern of an original is to be transferred, the measurement method comprising at least one Measurement of the first number of measurement marks obtained by executing a first measurement mode of measuring a first number of measurement marks among a plurality of measurement marks formed in the shot area on the substrate for one substrate. calculating first position information regarding the position of the shot area on the substrate based on the value; and assuming that a second number of measurement marks smaller than the first number among the plurality of measurement marks is measured. the step of predicting second position information regarding the position of the shot area for each of a plurality of models for calculating position information regarding the position of the shot area based on the first position information; calculating a plurality of first evaluation values corresponding to each of the plurality of models for evaluating each of the plurality of models from second position information; transitioning the measurement mode for the plurality of measurement marks from the first measurement mode to a second measurement mode for measuring the second number of measurement marks, based on a model corresponding to one evaluation value; However, in the step of transitioning to the second measurement mode when there are a plurality of first evaluation values that satisfy the evaluation criteria, when a measurement mode based on a model corresponding to the first evaluation value that satisfies the evaluation criteria is executed. The measurement mode for the plurality of measurement marks is transitioned from the first measurement mode to the second measurement mode based also on the processing time .

Further objects or other aspects of the present invention will become apparent from the embodiments described below with reference to the accompanying drawings.

According to the present invention, for example, it is possible to provide a measurement method that is advantageous for measuring measurement marks formed in shot areas on a substrate.

FIG. 1 is a schematic diagram showing the configuration of an exposure apparatus. FIG. 3 is a diagram showing an example of a shot layout and measurement marks on a substrate. It is a flow chart for explaining measurement processing in a 1st embodiment. It is a figure showing an example of arrangement of measurement points. It is a figure showing an example of arrangement of measurement points. It is a flow chart for explaining measurement processing in a 2nd embodiment.

Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments do not limit the claimed invention. Although a plurality of features are described in the embodiments, not all of these features are essential to the invention, and the plurality of features may be arbitrarily combined. Furthermore, in the accompanying drawings, the same or similar components are designated by the same reference numerals, and redundant description will be omitted.

<First embodiment>
FIG. 1 is a schematic diagram showing the configuration of an exposure apparatus 100. The exposure apparatus 100 is a lithography apparatus used in the manufacturing process of flat panels such as liquid crystal panels and organic EL panels, and forms a pattern on a substrate. The exposure apparatus 100 is, for example, a step-and-scan exposure apparatus (scanner) that exposes the substrate to light while moving the original and the substrate in the scanning direction (scanning exposure) to transfer the pattern of the original onto the substrate. be. However, the exposure apparatus 100 can also employ a step-and-repeat method or other exposure methods.

As shown in FIG. 1, the exposure apparatus 100 includes an illumination optical system 21 that illuminates the original 1 (mask) with light from a light source, and measures a plurality of measurement marks formed in the shot area of the substrate 1 (on the substrate). It has a measurement optical system 22 that holds the original 1 and an original stage 23 that moves while holding the original 1. The exposure apparatus 100 also includes a structure 24 that supports each part of the exposure apparatus 100, a projection optical system 25 that projects the pattern of the original 1 onto the substrate 1, and a substrate stage 26 that holds and moves the substrate 1. . The exposure apparatus 100 also includes an interferometer 27 for measuring the position of the original stage 23, an interferometer 28 for measuring the position of the substrate stage 26, and a motor 29 for moving the original stage 23. , and a motor 30 for moving the substrate stage 26. The exposure apparatus 100 also includes a control section 31 that controls the entire exposure apparatus 100 and a substrate transport section 40 that transports the substrate 1 between the substrate stage 26 and the substrate stage 26 .

The control section 31 is constituted by an information processing device (computer) including a CPU, a memory, etc., and operates the exposure apparatus 100 by controlling each section of the exposure apparatus 100 in an integrated manner according to a program stored in a storage section.
In this embodiment, the control unit 31 controls an exposure process in which the substrate 2 is exposed through the original 1 and processes related to the exposure process. Processes related to exposure processing include, for example, measurement processing that measures a plurality of measurement marks formed in shot areas on the substrate to which the pattern of the original 1 is to be transferred, and processing that measures the original 1 and the substrate based on the results of the measurement processing. This includes alignment processing for positioning with the shot area.

FIG. 2 is a diagram showing an example of a shot layout (exposure layout) and measurement marks on a substrate in this embodiment. However, the shot layout and measurement marks (number and arrangement) shown in FIG. 2 are illustrative and are not limited thereto. As shown in FIG. 2, in this embodiment, a four-shot grid layout in which two shot areas are formed in the horizontal direction (X direction) and two shot areas are formed in the vertical direction (Y direction) is used on the substrate. formed on top. Hereinafter, each shot area will be referred to as a shot area S1, a shot area S2, a shot area S3, and a shot area S4 in a clockwise direction starting from the upper left shot area.

Further, in each of the shot areas S1 to S4, three sets of two measurement marks arranged in the horizontal direction (along the left and right) are arranged along the vertical direction (top and bottom). Therefore, six measurement marks are formed in each shot area in the shot layout of this embodiment. In the following, each measurement mark is referred to as a measurement mark P1L, a measurement mark P1R, a measurement mark P2R, a measurement mark P3R, a measurement mark P3L, and a measurement mark P2L in a clockwise direction starting from the upper left measurement mark in each shot area. Therefore, each measurement mark in each shot area can be identified by its respective notation.

Furthermore, in the present embodiment, two measurement marks aligned left and right in each shot area, for example, measurement mark P2L and measurement mark P2R, are arranged so that measurement optical system 22 can measure them simultaneously. Therefore, for each shot area, by moving the substrate stage 26 in the Y direction and simultaneously measuring two measurement marks lined up on the left and right with the measurement optical system 22, all measurements in the shot area can be completed in three measurements. Marks can be measured.

With reference to FIG. 3, the exposure processing in this embodiment will be described with particular attention to the measurement processing. As described above, the measurement process is executed by the control section 31 controlling each section of the exposure apparatus 100 in an integrated manner.

In S101, an all-point measurement mode is executed for at least one substrate 1 in which all of the plurality of measurement marks formed in each shot area on the substrate are measured. In this embodiment, the number of substrates 1 (number of sheets) on which the all-point measurement mode is executed is two. Specifically, first, the first substrate 1 of the lot is transported to the substrate stage 26 via the substrate transport section 40, and the substrate 1 is held on the substrate stage 26. Next, while moving the substrate stage 26, all of the measurement marks formed in each shot area are measured using the measurement optical system 22, and the measurement value (first position information) of each measurement mark is acquired and stored in the memory. It is stored in a storage unit such as . For the second substrate 1 in the lot, the all-point measurement mode is executed in the same manner as for the first substrate 1. In this embodiment, an all-point measurement mode is executed in which all of the plurality of measurement marks formed in each shot area are measured for each of the first and second substrates 1 of the lot. It is not necessary to measure all of the plurality of measurement marks. For example, a measurement mode (first measurement mode) may be executed in which a first number of measurement marks among a plurality of measurement marks formed in a shot area on a substrate is measured.

Further, for the first and second substrates 1 on which the all-point measurement mode has been executed, alignment processing and exposure processing are performed while performing various correction processing based on the measured values of the measurement marks, and the substrate transport unit 40 The substrate is carried out from the substrate stage 26 (exposure apparatus 100) via.

In S102, while changing a plurality of models (prediction conditions) for calculating positional information regarding the position of the shot area, the measurement value of each measurement mark of each shot area of the first and second substrates 1 of the lot is calculated. (i.e., calculate a predicted value). In this embodiment, a predicted value (second position information) of the measured value of each measurement mark is calculated for each of two different models (the first model and the second model). Here, the model for calculating positional information regarding the position of the shot area includes at least one of the number of measurement points, the arrangement of measurement points, and a calculation algorithm. Note that the number of measurement points refers to the number of measurement marks to be measured by the measurement optical system 22 among the plurality of measurement marks formed in each shot area on the substrate, and the arrangement of the measurement points refers to the number of measurement marks to be measured by the measurement optical system 22 among the plurality of measurement marks formed in each shot area on the substrate. It means the position of the measurement mark to be measured by the measurement optical system 22. The calculation algorithm refers to an algorithm that calculates position information regarding the position of each shot area on the substrate. Further, the positional information regarding the position of each shot area on the substrate includes at least one of magnification, rotation, and shift of the shot area. However, the measurement mode corresponding to the model set in S102 is a measurement mode (which measures a second number of measurement marks smaller than the first number among the plurality of measurement marks formed in the shot area on the substrate). (second measurement mode).

FIG. 4 is a diagram showing the arrangement of measurement points as the first model in this embodiment. As shown in FIG. 4, the first model assumes a measurement mode in which only measurement marks P2L and P2R formed in each shot area on the substrate are measured. Further, as positional information regarding the position of each shot area on the substrate, components expressed by the following equations 11, 12, 13, 14, 15, 16, 17, and 18 are defined.

Here, the measurement value of the measurement mark PjL in the shot area Si in the X direction is set as x _SiPjL (i=1, 2, 3, 4 j=1, 2, 3), and the measurement value in the X direction of the measurement mark PjR in the shot area Si is Let the measured value be x _SiPjR (i=1, 2, 3, 4 j=1, 2, 3). Similarly, the measurement value of the measurement mark PjL in the shot area Si in the Y direction is set as y _SiPjL (i=1,2,3,4 j=1,2,3), and the measurement value in the Y direction of the measurement mark PjR in the shot area Si is Let the measured value be y _SiPjR (i=1, 2, 3, 4 j=1, 2, 3). Further, the coordinates of the shot area Si in the X direction are DX _i (i=1, 2, 3, 4), the coordinates of the shot area Si in the Y direction are DY _i (i=1, 2, 3, 4), The number of shot areas Si is assumed to be N (4 in this embodiment).

Then, the measured values of each measurement mark acquired in S101 are substituted into Equations 11 to 18 to calculate the substrate magnification, substrate rotation, shape magnification, shape rotation, and shift of each shot area. Further, average values between substrates are determined for each of the above-mentioned components, and these are designated as MP _ave , RP _ave , MS _avei , RS _avei , SX _ave and SY _ave .

Finally, assuming that the measurement values of each measurement mark on the first substrate 1 of the lot are measured with the arrangement of measurement points shown in FIG. 4, each of the above-mentioned components is determined using Equations 11 to 18. These components include substrate magnification MP', substrate rotation RP', shape magnification MS' _i of each shot area, shape rotation RS' _i , shifts SX' _i and SY' _i . Then, a predicted value of the measurement value of each measurement mark is obtained from the following equations 21, 22, 23, and 24.

Here, the predicted value of the measurement value in the X direction of the measurement mark PjL of the shot area Si is assumed to be x' _SiPjL (i=1, 2, 3, 4 j=1, 2, 3). Let x′ _SiPjR (i=1, 2, 3, 4 j=1, 2, 3) be the predicted value of the measurement value of the measurement mark PjR in the shot area Si in the X direction. Similarly, let y' _SiPjL (i=1, 2, 3, 4, j=1, 2, 3) be the predicted value of the measurement value of the measurement mark PjL in the shot area Si in the Y direction. Let y' _SiPjR (i=1, 2, 3, 4 j=1, 2, 3) be the predicted value of the measurement value of the measurement mark PjR in the shot area Si in the Y direction. Further, the Y-direction coordinates of measurement marks PjL/PjR in shot area Si are assumed to be Y _ij (i=1, 2, 3, 4 j=1, 2, 3).

Similarly, for the second substrate 1 in the lot, predicted values of the measurement values of each measurement mark corresponding to the first model are calculated.

FIG. 5 is a diagram showing the arrangement of measurement points as the second model in this embodiment. As shown in FIG. 5, the second model assumes a measurement mode in which only measurement marks P2L and P2R formed in shot areas S1 and S2 on the substrate are measured, respectively. Further, as positional information regarding the position of each shot area on the substrate, components expressed by the following equations 31, 32, 33, 34, 35, and 36 are defined.

The notations in Equations 31 to 36 are the same as in Equations 11 to 18.

Then, the measured values of each measurement mark acquired in S101 are substituted into Equations 31 to 36 to calculate the substrate magnification, substrate rotation, and shift of each shot area. Further, average values between substrates are determined for each of the above-mentioned components, and these are designated as MP _ave , RP _ave , SX _ave , and SY _{ave ,} respectively.

Finally, assuming that the measurement values of each measurement mark on the first substrate 1 of the lot are measured with the arrangement of measurement points shown in FIG. 5, the above-mentioned components are determined using Equations 31 to 36. Each of these components includes substrate magnification MP', substrate rotation RP', and shifts SX' and SY' of each shot area. Then, a predicted value of the measured value of each measurement mark is obtained from the following equations 41, 42, 43, and 44.

Expressions 41 to 44 are expressed except that the X-direction coordinates of measurement marks PjL/PjR of shot area Si are X _ijL /X _ijR (i=1, 2, 3, 4 j= 1, 2, 3). , are similar to Equations 21 to 24.

Similarly, for the second substrate 1 in the lot, predicted values of the measurement values of each measurement mark corresponding to the second model are calculated.

Note that the definitions and formulas of each component described in this embodiment are merely examples, and the present invention is not limited thereto.

In S103, an evaluation value (first evaluation value) corresponding to each of the plurality of models for evaluating each of the plurality of models is calculated from the predicted value of the measurement value of each measurement mark obtained in S102 (each measurement Evaluate the predicted value of the mark measurement). In this embodiment, for each of a plurality of models, the predicted value of each measurement value of all measurement marks formed in each shot area obtained in S102 and the actual measurement value (measurement value actually measured in S101) are used. The evaluation value is the maximum absolute value of the difference between the Therefore, the same number of evaluation values as the number of models, in this embodiment, two evaluation values are obtained. Note that in this embodiment, the evaluation value is the maximum value of the absolute value of the difference between the predicted value of the measured value of each measurement mark and the actual measured value, but it is not limited to this. Then, among the evaluation values corresponding to each of the plurality of models, a model corresponding to an evaluation value smaller than a predetermined threshold, that is, satisfying the evaluation criteria, is selected, and a measurement mode corresponding to the model is selected. It is determined that it is applicable as a measurement mode for marks. In other words, the measurement mode for the measurement mark is changed from the all-point measurement mode to the measurement mode corresponding to the model whose evaluation value satisfies the evaluation criteria.

In S103, if there are multiple evaluation values that satisfy the evaluation criteria, for example, a model corresponding to the evaluation value that is farthest from the threshold value may be selected from among the evaluation values that meet the evaluation criteria. Further, a model corresponding to an evaluation value that satisfies the evaluation criterion may be selected based on other evaluation conditions, for example, a processing time of a measurement mode corresponding to a model whose evaluation value satisfies the evaluation criterion. In this embodiment, it is obvious that the processing time of the measurement mode corresponding to the second model is shorter than the processing time of the measurement mode corresponding to the first model, so if the evaluation values of both models satisfy the evaluation criteria. However, it is possible to select the second model.

On the other hand, if there is no evaluation value that satisfies the evaluation criteria, all or part of the measurement values stored in the storage section are discarded, and the all-point measurement mode is maintained as the measurement mode for the measurement marks.

In S104, the measurement mode corresponding to the model selected in S103 is executed for the first and second substrates 1 of the lot. For example, when the first model is selected, as shown in FIG. 4, a measurement mode that measures only measurement marks P2L and P2R is executed, and the measured values are substituted into Equations 11 to 18, The substrate magnification, substrate rotation, shape magnification, shape rotation, and shift of each shot area are calculated. Further, each calculated component is substituted into Equations 21 to 24 to obtain a predicted value of the measured value of each measurement mark.

In S105, it is determined whether or not the measurement mode to which the transition was made in S103 can be continued is based on the predicted value of the measured value of each measurement mark calculated in S104. In this embodiment, the difference between the predicted value of the measurement value of each measurement mark calculated in S104 and the actual measurement value is evaluated, and if even one exceeds a predetermined threshold value, a transition is made in S103. It is determined that the measurement mode cannot be continued. In this case, the measurement mode for the measurement mark is transitioned (returned) to the all-point measurement mode. On the other hand, the difference between the predicted value of the measurement value of each measurement mark calculated in S104 and the actual measurement value is evaluated, and if none exceeds the predetermined threshold, the measurement mode to which the transition was made in S103 is It is determined that continuation is possible. In this case, alignment processing and exposure processing are performed while performing various correction processing based on the measurement value of the measurement mark obtained by executing the measurement mode changed in S103, and the substrate is transferred to the substrate stage 2 through the substrate transport unit 40. The substrate 1 is carried out from the (exposure apparatus 100).

As described above, according to the present embodiment, even if the change component of the substrate 1 changes during the operation of the exposure apparatus 100 (during the manufacturing process), the measurement mode for the measurement mark is always set to the optimal measurement mode (measurement point The measurement mode can be changed to a measurement mode that reduces the Therefore, in the exposure apparatus 100, the pattern of the original 1 is aligned with high precision with respect to the shot area on the substrate, and the throughput (productivity) is increased by thinning out the measurement marks (reducing the number of measurement points). It is possible to simultaneously improve the

<Second embodiment>
Exposure processing in this embodiment will be described with particular attention to measurement processing with reference to FIG. 6 . As described above, the measurement process is executed by the control section 31 controlling each section of the exposure apparatus 100 in an integrated manner.

In S201, similarly to S101 to S105 described in the first embodiment, the measurement mode for the measurement marks formed in each shot area on the substrate is transitioned to the optimal measurement mode (that is, the measurement mode is optimized. ). In this embodiment, it is determined in S105 that it is possible to continue the measurement mode corresponding to the first model, and the measurement mode corresponding to the first model has been executed for at least one substrate 1. do. In addition, the all-point measurement mode is executed for the first and second substrates 1 of the lot, and the measurement mode corresponding to the first model is executed for the third and fourth substrates 1 of the lot. It shall be assumed that In this embodiment, the measurement mode for the measurement mark is further optimized in S202, S203, S204, and S205.

In S202, the measurement mode corresponding to the first model (measurement of only the measurement marks P2L and P2R of each shot area on the board) is treated as the all-point measurement mode, and the third and fourth sheets of the lot are changed while changing the model. The measurement value of each measurement mark in each shot area of the second substrate 1 is predicted. In this embodiment, a predicted value (fourth position information) of the measured value of each measurement mark is calculated for the second model. Specifically, the measurement value (third position information) of each measurement mark obtained by executing the measurement mode corresponding to the first model on the third and fourth substrates 1 of the lot is calculated using equations 31 to 31. By substituting into Equation 36, the substrate magnification, substrate rotation, and shift of each shot area are calculated. Further, average values between substrates are determined for each of the above-mentioned components, and these are designated as MP _ave , RP _ave , SX _ave , and SY _{ave ,} respectively. Furthermore, assuming that a measurement mode (third measurement mode) is executed for the third substrate 1 in the lot with the arrangement of measurement points shown in FIG. MP', substrate rotation RP', and shifts SX' _i and SY' _i of each shot area are determined. Then, predicted values of the measured values of the measurement marks P2L and P2R are obtained from Equations 41 to 44. Similarly, for the fourth substrate 1 in the lot, predicted values of the measurement values of the measurement marks P2L and P2R are calculated.

In S203, an evaluation value (second evaluation value) corresponding to each of the plurality of models for evaluating each of the plurality of models is calculated from the predicted value of the measurement value of each measurement mark obtained in S202 (each measurement Evaluate the predicted value of the mark measurement). In this embodiment, only the second model, that is, the predicted values of the measured values of the measurement marks P2L and P2R of the shot areas S1 and S3 on the substrate, are evaluated. Since the specific evaluation is the same as in S103, detailed explanation here will be omitted. However, if there is no evaluation value that satisfies the evaluation criteria, the measurement mode for the measurement mark is not immediately returned to the all-point measurement mode, but is maintained at the measurement mode corresponding to the first model.

In S204, the measurement mode corresponding to the model selected in S203 is executed for the fifth and subsequent substrates 1 in the lot. In this embodiment, it is assumed that a measurement mode corresponding to the second model, that is, a measurement mode in which only measurement marks P2L and P2R of shot areas S1 and S3 are measured, as shown in FIG. 5, is executed. Then, by substituting the measurement values obtained by executing the measurement mode corresponding to the second model into Equations 31 to 36, the substrate magnification MP', the substrate rotation RP', and the shifts SX' and SY' of each shot area are calculated. Calculate. Furthermore, each calculated component is substituted into Equations 41 to 44 to obtain predicted values of the respective measurement values of measurement marks P2L and P2R.

In S205, it is determined whether or not the measurement mode to which the transition was made in S203 can be continued is based on the predicted value of the measurement value of each measurement mark calculated in S204. Since the specific determination is the same as in S105, detailed explanation will be omitted here. If it is determined that it is possible to continue the measurement mode to which the transition was made in S203, alignment processing and exposure processing are performed while performing various correction processing based on the measured values of the measurement marks, as in S105, and the substrate transport unit 40 is The substrate 1 is carried out from the substrate stage 26 through the substrate stage 26. On the other hand, if it is determined that the measurement mode to which the transition was made in S203 cannot be continued, the measurement mode for the measurement mark is transitioned (returned) to the all-point measurement mode or the measurement mode corresponding to the first mode.

In this way, in this embodiment, when the measurement mode for measurement marks is changed to a measurement mode that reduces the number of measurement points, even if the deformation component of the substrate 1 changes, the measurement mode is maintained. Alternatively, it is possible to return to the measurement mode in which the number of measurement points is increased. Therefore, during the operation of the exposure apparatus 100, the measurement mode for the measurement mark can always be changed to the optimal measurement mode.

Note that the operation of the exposure apparatus 100, that is, the exposure method performed by the exposure apparatus 100 also constitutes one aspect of the present invention. As described in the first embodiment and the second embodiment, this exposure method includes the step of measuring a plurality of measurement marks formed in a shot area on a substrate. Further, this exposure method includes the steps of aligning the original and the shot area based on the results of measurement of a plurality of measurement marks, and after alignment, exposing the substrate through the original. .

Furthermore, if the operating status of the exposure apparatus 100 changes while the exposure apparatus 100 is in operation, the measurement processing described in the first embodiment or the second embodiment may be performed accordingly. Here, changes in the operating status of the apparatus include changes in the environment of the exposure apparatus 100, changes in information set in the exposure apparatus 100, changes in information regarding the production of the exposure apparatus 100, and the like. Furthermore, the environment of the exposure apparatus 100 includes temperature, humidity, atmospheric pressure, vibration, etc. inside and outside the apparatus. The information set in the exposure apparatus 100 includes exposure conditions, control parameters for each part of the exposure apparatus 100, and the like. Information regarding the production of the exposure apparatus 100 includes the aperture ratio of the original plate 1, exposure amount, substrate processing time, substrate exchange time, production number, production time, interrupt signal from an external system, and the like.

<Third embodiment>
The present invention provides a system or device with a program that implements one or more functions of the above-described embodiments via a network or a storage medium, and one or more processors in a computer of the system or device reads the program. This can also be achieved by executing a process. It can also be implemented by a circuit (eg, an ASIC) that implements one or more functions.

<Fourth embodiment>
The article manufacturing method according to the embodiment of the present invention is suitable for manufacturing articles such as flat panel displays, liquid crystal display elements, semiconductor elements, MEMS, etc., for example. This manufacturing method includes a step of exposing a substrate coated with a photosensitive agent using the above-described exposure method (exposure apparatus 100), and a step of developing the exposed photosensitive agent. Further, using the developed photosensitive material pattern as a mask, an etching process, an ion implantation process, etc. are performed on the substrate to form a circuit pattern on the substrate. By repeating these steps of exposure, development, etching, etc., a circuit pattern consisting of a plurality of layers is formed on the substrate. In a post-process, the substrate on which the circuit pattern has been formed is subjected to dicing (processing), and chip mounting, bonding, and inspection steps are performed. Such manufacturing methods may also include other well-known steps (oxidation, deposition, vapor deposition, doping, planarization, resist stripping, etc.). The method for manufacturing an article according to the present embodiment is advantageous in at least one of the performance, quality, productivity, and production cost of the article compared to the conventional method.

The invention is not limited to the embodiments described above, and various changes and modifications can be made without departing from the spirit and scope of the invention. Therefore, the following claims are hereby appended to disclose the scope of the invention.

100: Exposure device 1: Original plate 2: Substrate 22: Measurement optical system 31: Control unit

Claims (10)

A measurement method for measuring a plurality of measurement marks formed in a shot area on a substrate to which a pattern of an original is to be transferred,
The first number of measurement marks obtained by executing a first measurement mode for measuring a first number of measurement marks among a plurality of measurement marks formed in a shot area on at least one substrate on at least one substrate. calculating first position information regarding the position of the shot area on the substrate based on the measured value;
If it is assumed that a second number of measurement marks smaller than the first number among the plurality of measurement marks are to be measured, positional information regarding the position of the shot area is calculated based on the first positional information. predicting second position information regarding the position of the shot area for each of a plurality of models for
calculating a plurality of first evaluation values corresponding to each of the plurality of models for evaluating each of the plurality of models from the second position information;
The measurement mode for the plurality of measurement marks is changed from the first measurement mode to the second number of measurement marks based on the model corresponding to the first evaluation value that satisfies the evaluation criteria among the plurality of first evaluation values. A step of transitioning to a second measurement mode for measurement;
has
When there are a plurality of first evaluation values that satisfy the evaluation criteria, the step of transitioning to the second measurement mode includes processing when a measurement mode based on a model corresponding to the first evaluation value that satisfies the evaluation criteria is executed. A measurement method characterized in that the measurement mode for the plurality of measurement marks is changed from the first measurement mode to the second measurement mode based also on time . calculating third position information regarding the position of the shot area on at least one substrate based on the measured values of the second number of measurement marks obtained by executing the second measurement mode; ,
When it is assumed that a third number of measurement marks smaller than the second number among the plurality of measurement marks are to be measured, positional information regarding the position of the shot area is calculated based on the third positional information. predicting fourth position information regarding the position of the shot area for each of a plurality of models for
calculating a plurality of second evaluation values corresponding to each of the plurality of models for evaluating each of the plurality of models from the fourth position information;
If there is a second evaluation value that satisfies the evaluation criteria among the plurality of second evaluation values, the measurement mode for the plurality of measurement marks is set to the second measurement value based on the model corresponding to the second evaluation value. a step of transitioning from the mode to a third measurement mode for measuring the third number of measurement marks;
The measuring method according to claim 1, further comprising: The method further comprises the step of maintaining the measurement mode for the plurality of measurement marks in the second measurement mode when there is no second evaluation value that satisfies the evaluation criteria among the plurality of second evaluation values. The measuring method according to claim 2 . further comprising the step of transitioning the measurement mode for the plurality of measurement marks from the second measurement mode to the first measurement mode when there is no second evaluation value that satisfies the evaluation criteria among the plurality of second evaluation values. 3. The measuring method according to claim 2 , further comprising: The model is an algorithm that calculates the number of measurement marks to be measured among the plurality of measurement marks, the position of the measurement mark to be measured among the plurality of measurement marks, and positional information regarding the position of the shot area. The measuring method according to any one of claims 1 to 4 , comprising at least one of the following. 6. The measuring method according to claim 1, wherein the positional information regarding the position of the shot area includes at least one of magnification, rotation, and shift of the shot area. An exposure method that exposes a substrate through an original,
a step of measuring a plurality of measurement marks formed in a shot area on the substrate to which the pattern of the original plate is to be transferred;
a step of aligning the original plate and the shot area based on the measurement results;
After the alignment, exposing the substrate to light through the master plate;
has
The step of performing the measurement includes:
The first number of measurement marks obtained by executing a first measurement mode for measuring a first number of measurement marks among a plurality of measurement marks formed in a shot area on at least one substrate on at least one substrate. calculating first position information regarding the position of the shot area on the substrate based on the measured value;
If it is assumed that a second number of measurement marks smaller than the first number among the plurality of measurement marks is to be measured, positional information regarding the position of the shot area is calculated based on the first positional information. predicting second position information regarding the position of the shot area for each of a plurality of models for
calculating a plurality of first evaluation values corresponding to each of the plurality of models for evaluating each of the plurality of models from the second position information;
The measurement mode for the plurality of measurement marks is changed from the first measurement mode to the second number of measurement marks based on the model corresponding to the first evaluation value that satisfies the evaluation criteria among the plurality of first evaluation values. A step of transitioning to a second measurement mode for measurement;
including;
When there are a plurality of first evaluation values that satisfy the evaluation criteria, the step of transitioning to the second measurement mode includes processing when a measurement mode based on a model corresponding to the first evaluation value that satisfies the evaluation criteria is executed. An exposure method characterized by transitioning a measurement mode for the plurality of measurement marks from the first measurement mode to the second measurement mode based also on time . exposing the substrate using the exposure method according to claim 7 ;
Developing the exposed substrate;
manufacturing an article from the developed substrate;
A method for manufacturing an article characterized by having the following. A program for causing a computer to execute each step of the measuring method according to any one of claims 1 to 6 . An exposure apparatus that performs an exposure process of projecting an image of a pattern of an original onto a substrate and exposing the substrate to light,
a projection optical system that projects an image of the pattern onto the substrate;
a control unit that controls the exposure process;
has
The exposure process is
a step of measuring a plurality of measurement marks formed in a shot area on the substrate to which the image of the pattern is to be transferred;
a step of aligning the original plate and the shot area based on the measurement results;
After the alignment, exposing the substrate to light through the master plate;
has
The step of performing the measurement includes:
The first number of measurement marks obtained by executing a first measurement mode for measuring a first number of measurement marks among a plurality of measurement marks formed in a shot area on at least one substrate on at least one substrate. calculating first position information regarding the position of the shot area on the substrate based on the measured value;
If it is assumed that a second number of measurement marks smaller than the first number among the plurality of measurement marks are to be measured, positional information regarding the position of the shot area is calculated based on the first positional information. predicting second position information regarding the position of the shot area for each of a plurality of models for
calculating a plurality of first evaluation values corresponding to each of the plurality of models for evaluating each of the plurality of models from the second position information;
The measurement mode for the plurality of measurement marks is changed from the first measurement mode to the second number of measurement marks based on the model corresponding to the first evaluation value that satisfies the evaluation criteria among the plurality of first evaluation values. A step of transitioning to a second measurement mode for measurement;
including;
When there are a plurality of first evaluation values that satisfy the evaluation criteria, the step of transitioning to the second measurement mode includes processing when a measurement mode based on a model corresponding to the first evaluation value that satisfies the evaluation criteria is executed. An exposure apparatus characterized in that a measurement mode for the plurality of measurement marks is transitioned from the first measurement mode to the second measurement mode based also on time .

Images