JP2002203773A - Aligner - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an aligner or the like wherein overlay precision can be improved by accurately calculating nonlinear shift of an alignment mark and an exposure shot which are caused by distortion in a substrate surface direction of chucking of a substrate like a wafer, and performing position correction. SOLUTION: This aligner is provided with an alignment detector 9 for detecting a position of an alignment mark formed on a part of sample shot out of a plurality of exposure shots, a storage part 16 or the like as a means for holding a hysteresis value of inclination difference between an alignment mark neighboring surface and a reference surface to be exposed when an alignment mark 6a is exposed and formed, a stage driving control system 11 as a means which corrects a measured value of a position of the alignment mark 6a by using difference between an inclination difference value and the hysteresis value of inclination difference, before position presumption of all exposure shots, a synchronous control system 12, a focus measuring system 13, etc.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to an exposure apparatus for exposing and transferring a fine pattern drawn on an original such as a reticle onto a substrate such as a wafer, a device manufacturing method, and the like.

[0002]

2. Description of the Related Art A projection transfer technology called photolithography is used in a process of forming a fine pattern for a semiconductor device, a wave crystal display, or the like. The projection transfer is performed, for example, as follows. An original pattern formed on a quartz glass substrate called a reticle or mask is illuminated, and a latent image pattern is transferred and exposed to a substrate coated with a photosensitive resist via a projection optical system. After the latent image pattern is developed into a resist pattern, the substrate is finely processed by etching with a high processing selectivity between the pattern and the resist underlying surface.

[0003] In such a pattern forming process, the latest MPU and D which require particularly high fineness and processing accuracy are required.
In a projection exposure process in the manufacture of a semiconductor device represented by a RAM, a reduction projection type exposure apparatus called a stepper is mainly used. The stepper sequentially repeats pattern exposure by sequentially moving an exposure area (exposure shot) equally divided on a wafer to an exposure angle of view under a projection optical system by a wafer mounting stage, that is, a step-and-repeat method. Exposure apparatus.

A step-and-scan exposure apparatus called a scanner is a method of scanning and exposing a wafer and a reticle to a projection optical system having a rectangular illumination area. It is characterized by wide corners and high pattern uniformity.

[0005] Incidentally, in both the exposure apparatus of the stepper and the scanner, the resolution of the projection optical system is required to be improved in order to respond to the recent demand for miniaturization of semiconductors. I have.

As a means for improving the resolving power, a projection exposure apparatus has been used in the past, for example, for increasing the NA (numerical aperture) of the projection optical system by fixing the wavelength, or for changing from g-line to i-line. Is a method for shortening the exposure wavelength such as the oscillation wavelength of a KrF or ArF excimer laser. Attempts have also been made to extend the processing limit by light exposure by using a modified illumination method that emphasizes obliquely incident illumination light by changing the shape of the illumination light source, or a phase shift mask that provides a phase difference to the transmitted light between adjacent reticle patterns. Have been.

As the resolution increases, the control accuracy of the semiconductor process becomes more and more strict. On the other hand, the so-called process margin, for example, the depth of focus of the projection optical system and the allowable amount of the total overlay is reduced. On the other hand, apart from the improvement in resolution, an improvement in overlay accuracy itself is also required. The reason for this is that the overlay accuracy is increased, the arrangement margin of the reticle pattern is reduced, the device size can be reduced, and the device yield per substrate increases, resulting in cost reduction.

In order to meet these demands, projection exposure apparatuses have been improved with respect to exposure focus systems and alignment systems directly related to overlay accuracy.
Hereinafter, a conventional example of the exposure focus system will be briefly described, and then an alignment system relating to overlay accuracy will be described.

A focus detector in the exposure focus system makes a probe light obliquely incident on a detection surface,
In general, an off-axis type that performs detection from the condensing position of the reflected light is used, and the detector is usually fixed around the image plane of the projection optical system. In the stepper, after the exposure shot is positioned within the exposure angle of view of the projection optical system, the wafer stage is driven up and down and tilted (focusing) based on the height and tilt amount of the wafer surface measured by the detector, and the projection lens Exposure is performed so that the image forming plane of the transfer region coincides with the image forming plane of the transfer area. In the scanner, the measurement of the height and the tilt amount of the wafer surface and the focusing by the detector are performed simultaneously with the scanning exposure.

It goes without saying that wafer alignment is the dominant factor in overlay accuracy. The alignment system includes an alignment detector that measures an alignment mark formed on a wafer, and an alignment unit that positions each shot at an exposure position according to a result of processing a position measurement value by a predetermined method.

The former alignment detector measures a corresponding shot position from an alignment mark position formed adjacent to the exposure shot. As a detection method by the alignment detector, there is a method of measuring a position through a projection optical system.
There are a TL method and an off-axis method that does not involve a projection optical system. At the time of detection, both methods require a so-called focus operation for aligning the alignment mark on the wafer with the detection surface, and the measurement of the height of the detection surface is performed by using the focus detector of the projection optical system described above or by the alignment detection system. Some of them have a focus detecting means.

As the alignment means, there is a die-by-die method in which an exposure position is measured for each exposure shot and alignment is performed. An alignment method generally used at present is a global alignment method. This global alignment method measures the position of an appropriate number of sample shots specified in advance,
This is a method of creating a linear correction formula for the position from the result, estimating all shot positions, and performing position alignment. By the position correction formula by the global alignment method,
It is possible to correct not only the wafer shift component but also the magnification, orthogonality, and rotation of the entire wafer related to the shot arrangement, and it is also possible to correct the magnification and rotation of the shot itself depending on the measurement point. As described above, the global alignment method has advantages such as high-throughput, high-accuracy alignment, etc., and also performs alignment according to the same correction equation over the entire wafer area. There are also advantages in terms of usability, such as the state of alignment can be determined by examining several points.

On the other hand, if the positional deviation between the shots to be exposed does not have linearity with respect to the position, that is, if the positional deviation has nonlinearity, the nonlinear deviation deviating from the linear correction amount directly becomes an alignment error, and deteriorates overlay accuracy. .
If a nonlinear deviation occurs at the sample shot position, an error is given to the linear correction formula calculated from the sample shot position. Therefore, reducing the non-linear deviation between shots to be exposed is an important issue in improving overlay accuracy.

[0014]

As described above, the overlay accuracy at the time of alignment has become strict, and the need to reduce the above-mentioned non-linear deviation has been increasing more and more, which causes a non-linear deviation to be suppressed. The target range of the factor is also expanding. In particular, one of the factors that has recently become apparent is distortion in the wafer surface direction during wafer chucking. This is a phenomenon in which local expansion and contraction occurs in the wafer surface, and the positions of the pattern to be exposed and the alignment marks are shifted.

In a projection exposure apparatus, generally, a wafer is vacuum-sucked to a pin contact chuck that ensures flatness,
Performs wafer flattening. However, when the concavities and convexities on the wafer contact surface are changed due to deposits through pinching of foreign matter between the pins and the wafer, or through a film forming process such as CVD, or the positional relationship between the wafer and the chuck is changed every time the exposure process is performed. Accordingly, when the contact state between the pins and the uneven shape of the wafer changes, distortion occurs in the wafer due to a bending moment generated according to the suction reaction force of the wafer contact surface. In accordance with the distortion distribution in the wafer at this time, a non-linear shift between shots to be exposed occurs, and the overlay accuracy is deteriorated.

The reason why such a nonlinear shift occurs will be described with reference to FIG. FIG. 6 is a diagram showing a state in which the wafer on the pin contact chuck is distorted due to foreign matter being inserted, P ₁ and P ₂ are pins of the pin contact chuck, W is a wafer having a thickness of 2 h, and D is Is the pin P
₂ is a foreign matter interposed between the wafer ₂ and the wafer W. The pin height reference plane is indicated by an OR plane, and the inspection plane in question is B-R.
B ₁ side. When the foreign matter D is not pinched, the wafer W is held at P ₁ , P ₂ ,.
O-O ₁ side of the pin P _1, although the A-A ₁ surface which is on the B-B ₁ side and P ₂ is an inspection surface parallel to each other, there is entrapment of foreign object D on the pin P ₂ In this case, the foreign matter D causes a bending moment due to the difference between the heights of O and A, which are the support points of the wafer W, so that the inspection surface BB ₁ is in relation to the OO ₁ surface. It has an inclination of a small angle △ θ. In the drawing, the O ₂ -B ₂ -A ₂ plane indicated by a dashed line located at the center of the cross section of the wafer W is a neutral plane where expansion and contraction does not occur due to bending moment. Here, (1) The change in the distance in the OR direction due to the bending moment is expressed as △
It can be ignored from the order of second order or more of θ. (2) B-B ₁ side, when the orthogonal with respect to O ₂ -B ₂ -A ₂ faces a neutral plane (Bernoulli-Navier hypothesis),
The shift Δr generated by the foreign substance D being caught can be expressed by the following equation (Equation 1).

[0017]

(Equation 1) The small angle △ θ represents the inclination of the wafer surface with respect to the 0-R plane, which is the pin height reference plane, that is, the chuck reference plane.
Therefore, if the minute angle △ θ is detected on the alignment mark surface, for example, the above-mentioned nonlinear shift amount is calculated and subtracted from the measured value, whereby an accurate shot position linear correction formula can be obtained, and the alignment accuracy is improved. I do.

The alignment system in the conventional exposure apparatus has the following problems. (1) The conventional exposure apparatus does not have a function of detecting a minute angle △ θ in the vicinity of the alignment mark. (2) Also, the small angle △ θ of the surface near the alignment mark
Can be measured with a focus system for detecting the exposure surface, but before or after measuring with the alignment detection system, the wafer position for alignment and focus measurement is different. Is added to the focus measurement position, and as a result, the apparatus throughput decreases. In addition, the focus system for detecting the exposure surface sets the distance between the plurality of wafer height measurement points to about the length of the exposure shot area (10 to 20).
[Mm]). Therefore, at most □ 0.1 [m
In order to measure the local inclination of the alignment mark area of about m], it is necessary to perform the measurement a plurality of times while changing the wafer position by the same degree. In this case, the focus measurement time increases and the throughput deteriorates. (3) A further problem is a non-linear position deviation between the time of forming the alignment mark exposure and the time of measuring the alignment. That is, the minute angle △ θ near the mark to be measured for correcting the shift amount is a difference between the inclination 形成 θpr at the time of forming the alignment mark surface and the inclination △ θpo at the time of measurement. Therefore, △ θpr is measured when forming the alignment mark, and
Δθpr is stored as a history value and read out when measuring the position of the alignment mark.
It is necessary to calculate θ. However, the measurement of △ θpr has the same problems as those described in the above (1) and (2), and the conventional exposure apparatus does not have a function of storing and reading △ θpr.

The nonlinear shift of the exposure shot position itself can be corrected from the small angle △ θa of the shot surface as in the case of the alignment. At the time of actual exposure, the detection and correction of the small angle △ θa are performed by the exposure focus system. However, in the conventional exposure apparatus, there is no function of correcting the exposure shot position based on the small angle 、 θa. This is a non-linear shift that occurs between the time when the underlying pattern is formed by exposure and the time when the resist is exposed. Therefore, the minute angle △ θa to be measured is the difference between the exposure surface inclination △ θapr at the time of forming the base pattern exposure and the exposure surface inclination △ θapo at the time of the resist exposure. On the other hand, at the time of forming the base pattern exposure, the focus system detects and corrects the inclination of the exposed surface △ θapr, but the information as the exposure history is not stored. Therefore, △
An accurate △ θa could not be calculated by taking the difference between θapr and △ θapo.

In view of the foregoing, the present invention has been made in view of the above-mentioned unsolved problems of the prior art, and has been made in consideration of the non-linear shift of an alignment mark and an exposure shot due to a distortion in the direction of the substrate surface chucking of a substrate such as a wafer. It is an object of the present invention to provide an exposure apparatus and a device manufacturing method capable of accurately calculating the position and performing position correction, and improving overlay accuracy.

[0021]

To achieve the above object, the present invention provides an exposure apparatus for projecting an original pattern onto a plurality of exposure shots of a surface to be exposed on a substrate via a projection optical system. An alignment detector for detecting a position of an alignment mark formed on the substrate; a means for measuring a difference in inclination between a surface near the alignment mark and a reference surface to be exposed of the substrate; Means for correcting the measured value.

In the present invention, the exposure apparatus may include means for holding or storing a history value of a tilt difference between the surface near the alignment mark and the reference surface to be exposed at the time of forming the alignment mark exposure, and It is preferable that the apparatus further comprises means for correcting a measured value of the position of the alignment mark from a difference from the history value. Further, it is preferable that the exposure apparatus further includes alignment means for estimating positions of all exposure shots based on a detection result of the alignment detector and positioning the exposure shot at an exposure angle of view of the projection optical system. Further, it is preferable that means for measuring a difference in inclination between the surface near the alignment mark and the reference surface to be exposed of the substrate is provided in the alignment detector.

Further, the exposure apparatus can measure a difference in inclination between the surface near the alignment mark and the reference surface to be exposed of the substrate relating to the exposure, and store the difference as a history value in the storage means. Further, it is preferable that the storage unit holds or stores at least a history value of the tilt difference as a parameter of a job (Job) file which is an information file necessary for an exposure process. Further, it is preferable that the inclined surface of the reference surface to be exposed is a global tilt surface.

According to another aspect of the present invention, there is provided an exposure apparatus for projecting an original pattern onto a plurality of exposure shots on a substrate exposure surface via a projection optical system. A first detector for detecting the position of the alignment mark formed on the substrate, and a second detector for measuring the height and inclination of a surface near the alignment mark.

In the present invention, it is possible to correct the measured value of the first detector based on the measured value of the second detector. A storage unit for holding or storing a history value of the alignment mark adjacent surface and the exposure reference surface at the time of forming the alignment mark exposure; and a tilt difference value between the alignment mark adjacent surface and the exposure reference surface of the substrate. It is preferable that the measurement value of the position of the alignment mark is corrected based on a difference between the inclination difference value and the history value.

According to another aspect of the present invention, there is provided an exposure apparatus for projecting an original pattern via a projection optical system onto a plurality of exposure shots onto which another pattern on a surface to be exposed is transferred. Focus means for measuring the shot focus value, which is the height and inclination of all exposure shots with respect to the exposure reference plane, to match the original pattern image plane of the projection optical system, and at the time of transfer exposure of the another pattern Means for correcting the exposure shot position from the difference between the history values of the different pattern focus values that are the height and the inclination with respect to the exposure reference plane, and a sample of a part of the plurality of exposure shots used for alignment of the next exposure process The correction amount of the exposure shot position of the shot is retained or stored as a history value, and it is used during the next exposure process alignment. The serial history value, characterized by comprising means for reflected as an offset.

In the present invention, the storage means stores a job (Job) as an information file necessary for an exposure process.
It is preferable to hold or store at least the two history values as parameters of the file. Further, an alignment mark detector for detecting an alignment mark position formed on a part of the sample shots of the plurality of exposure shots, and estimating the position of all the exposure shots based on the detection result of the alignment mark detector, An alignment means for positioning an exposure shot at an exposure angle of view of the projection optical system; a means for measuring a tilt difference value between a surface near the alignment mark and a reference surface to be exposed of the substrate; Storage means for holding or storing a history value of a tilt difference between a nearby surface and the reference surface to be exposed, and the alignment based on a difference between the tilt difference value and the history value of the tilt difference prior to estimating the positions of all the exposure shots. Means for correcting the position measurement may be further provided. Further, it is preferable that means for measuring a difference in inclination between the surface near the alignment mark and the reference surface to be exposed of the substrate is provided in the alignment detector.

According to another aspect of the present invention, there is provided an exposure apparatus for projecting an original pattern onto a plurality of exposure shots on a surface to be exposed of a substrate via a projection optical system. An alignment mark detector for detecting the position of an alignment mark formed on a part of the sample shots, and a means for measuring the inclination of the surface near the alignment mark, and the position of the exposure shot when the first layer of the substrate is exposed. Is corrected.

Further, the exposure apparatus further includes a display, a network interface, and a computer for executing network software, and is capable of performing data communication of maintenance information of the exposure apparatus via a computer network. Further, the network software provides a user interface on the display for accessing a maintenance database provided by a vendor or a user of the exposure apparatus connected to an external network of a factory where the exposure apparatus is installed. Information can be obtained from the database via an external network.

The exposure method of the present invention is an exposure method for exposing a plurality of exposure shots on a surface to be exposed on a substrate via a projection optical system to a plurality of exposure shots, the job being an information file necessary for an exposure process. A job (Job) name of a file and an exposure sequence start signal are input, and the job (Jo) is started to start an exposure sequence.
b) transferring sequence parameters according to information of a file, loading the substrate and / or the original based on the transferred sequence parameters, and sampling the substrate along the job (Job) file. Measuring the height, inclination and position of the alignment mark of the shot, performing global tilt correction after completion of all alignment measurements, calculating a non-linear shift amount and / or a linear correction formula of the alignment mark, and scanning exposure. A step of exchanging for the next substrate or ending the exposure when performing the subsequent exposure after the exposure of all the shots is completed.

According to the semiconductor device manufacturing method of the present invention, a manufacturing device group for various processes including the exposure apparatus is installed in a semiconductor manufacturing factory, and a semiconductor device is manufactured by a plurality of processes using the manufacturing device group. And a process. A step of connecting the manufacturing apparatus group by a local area network; and a step of performing data communication of information on at least one of the manufacturing apparatus group between the local area network and an external network outside the semiconductor manufacturing plant. Can be further provided. Further, a database provided by a vendor or a user of the exposure apparatus is accessed via the external network to obtain maintenance information of the manufacturing apparatus by data communication, or between a semiconductor manufacturing factory and another semiconductor manufacturing factory. Preferably, the production management is performed by performing data communication via the external network.

A semiconductor manufacturing plant accommodating the exposure apparatus according to the present invention includes a manufacturing apparatus group for various processes including the exposure apparatus, a local area network connecting the manufacturing apparatus group, and a local area network connected to the outside of the factory. Characterized in that it has a gateway that makes it possible to access an external network of the manufacturing apparatus group, and enables data communication of information on at least one of the manufacturing apparatus groups.

The maintenance method of the exposure apparatus according to the present invention is a maintenance method of the exposure apparatus installed in a semiconductor manufacturing factory, wherein a vendor or a user of the exposure apparatus is connected to an external network of the semiconductor manufacturing factory. Providing a maintenance database; allowing access to the maintenance database from within the semiconductor manufacturing plant via the external network; and storing the maintenance information stored in the maintenance database through the external network. Transmitting to the factory side.

[0034]

According to the projection exposure apparatus of the present invention, an alignment detector for detecting the position of an alignment mark formed on a part of sample shots of a plurality of shots on a substrate surface to be exposed, and based on a detection result of the alignment detector Alignment means for estimating the position of all exposure shots and positioning the exposure shots at the exposure angle of view of the projection optical system, and means for measuring the difference in inclination between the surface near the alignment mark and the reference surface to be exposed to the substrate. A storage unit for storing a history value of a tilt difference between the alignment mark vicinity surface and the exposed reference surface at the time of the mark exposure formation, and a difference between the measured tilt difference value and the tilt difference value held in the storage unit. By correcting the measured value of the alignment position, the surface of the substrate due to the foreign substance being pinched between the substrate and The nonlinear shift amount generated by the substrate plane distribution stress due form, etc. can be accurately calculated,
The position correction of the nonlinear shift can be performed with high accuracy, and the alignment accuracy and the overlay accuracy associated therewith can be greatly improved.

Further, regarding the exposure shot position, the inclination of each exposure shot of the a layer obtained at the time of the focus measurement before the exposure is converted into history information, and the nonlinear shift amount is calculated from the difference from the focus measurement value obtained before the b layer exposure. Is calculated, the exposure shot position can be similarly corrected, and the overlay accuracy can be improved.

[0036]

Next, embodiments of the present invention will be described in detail with reference to the drawings. [First Embodiment] FIG. 1 is a block diagram schematically showing a main part of a projection exposure apparatus according to a preferred embodiment of the present invention. This is a so-called step-and-scan type scanner-type projection exposure apparatus using a mold excimer laser.

In FIG. 1, a light beam emitted from a pulse oscillation type excimer laser 1 serving as an exposure light source is shaped into an exposure light beam having a desired slit shape having uniform intensity and illumination direction by a beam shaping optical system 2. To the reticle 3 as The reticle 3 has an element pattern to be transferred to a wafer 6 as a substrate, is mounted on a reticle stage 4 that can move two-dimensionally, and is position-controlled together with the reticle stage 4.

The illuminated element pattern image on the reticle 3 is condensed and formed in a slit shape on the optical conjugate plane via the projection optical system 5. The projection optical system 5 has a reduction ratio of, for example, 1
It is a ５ or ５ double-sided telecentric optical system. The wafer (substrate to be exposed) 6 is a wafer stage 7
Is held through a wafer chuck 7a, and is position-controlled together with the wafer stage 7. A thin photoresist material, which is a photosensitive material that causes a chemical reaction effectively by exposure light, is applied on the wafer 6 in advance, and functions as an etching mask in the next step.

The exposure focus detector 8 is composed of a light projecting system 8a for emitting a light beam and a light receiving system 8b for detecting one information of the reflected light from the wafer 6, and the height and inclination of the exposed surface of the wafer 6 Is detected. At the time of scanning exposure, the wafer stage 7 performs control based on the detection information of the focus detector 8 so that the exposed surface of the wafer 6 coincides with the pattern image surface. At this time, the reticle stage 4 and the wafer stage 7
Moves synchronously with the projection optical system 5, the wafer 6 is simultaneously exposed to the slit light, and the pattern is transferred to a photoresist layer on the wafer 6. Further, an alignment detector 9 (described later with reference to FIG. 3) detects the position of an alignment mark 6 a formed on a part of a plurality of exposure shots of the wafer 6, and moves the plurality of samples by moving the wafer stage 7. The position of the shot is measured, and the wafer 6 is positioned by global alignment.

In FIG. 1, reference numerals 11 to 17 denote components constituting a control system of the projection exposure apparatus according to the present embodiment. Reference numeral 11 denotes a stage drive control system, which is a driver for driving the reticle stage 4 and the wafer stage 7. Has functions. Reference numeral 12 denotes a synchronous control system which performs synchronous running control of the reticle stage 4 and the wafer stage 7 at the time of scanning exposure including position control of an exposure surface. Reference numeral 13 denotes a focus measurement system, which calculates the height and inclination of the surface to be detected from the wafer height information input from the focus detector 8, and
Output to Reference numeral 14 denotes an alignment measurement system which calculates a mark position from an alignment mark signal input from the alignment detector 9. Further, an AM focus detection system (see FIG. 3 described later) provided in the alignment detector 9.
Also, the height and the inclination of the surface near the alignment mark are calculated from the detected values of the reference mark. Reference numeral 15 denotes a main control unit, and a job (Job) file stored in the storage unit 16 (exposure conditions such as an exposure shot layout of a wafer and an exposure amount;
The exposure sequence of the exposure apparatus is controlled in accordance with an information file necessary for the exposure process, such as a history value of a tilt difference, information on a wafer and a reticle, and the like. Further, the start / stop of the exposure apparatus and the change and modification of the apparatus-specific control parameters and Job information are input to the main control unit 15 from the input device 17 which is a man-machine interface or a media interface, and are stored in the storage unit 16.

Next, a description will be given of the synchronization control and focus system of each stage in the present embodiment configured as described above. Here, the intersection of the image plane and the optical axis of the projection optical system 5 is the coordinate origin, the image plane is the XY plane, the optical axis direction is the Z direction, and the scanning direction is the Y direction. The rotation directions of the right-handed axis are ωx, ωy, and θ directions.

The reticle stage 4 is configured to control the X, Y, and θ axes on the XY plane, and the wafer stage 7 is configured to control the six axes. The actuators (not shown) of both stages 4 and 7 are linear motors, and drive power is supplied from a stage drive control system 11. In addition, both stages 4,
Reference numeral 7 denotes a stage position measurement system (not shown). The reticle stage 4 has a three-axis interferometer for X, Y, and θ axes, and the wafer stage 7 has X, Y, Z, and ω (not shown).
Six-axis interferometers for the x, ωy, and θ axes are provided, and the positions of the reticle / wafer stages 4 and 7 measured by these interferometers are output to a stage drive control system 11 and a synchronous control system 12. After that, the process returns to the stage drive control system 11 again as a stage drive amount signal, and is converted into a stage drive current.

Position control in the X, Y, and θ directions at the time of exposure is performed with respect to one target (master) and the other target (slave).
The reticle stage 4 having a higher control band is used as a slave, and the wafer stage 6 is used as a master to correct positional deviations in the X, Y, and θ directions. The control in the ωx and ωy directions of the Z axis is performed on the wafer stage 7 side, and the position inclination correction (the Z direction position and the surface inclination ω) of the wafer surface calculated by the focus measurement system 13 is performed.
x, ωy) and the like.

The focus detector 8 for measuring the position of the exposed surface of the wafer 6 in the Z direction with respect to the projection optical system 5 has a six-projection system 8a and a light-receiving system 8b, each of which narrows the exposure area below the projection optical system 5. From each of the light projecting systems 8a, a light beam using detection light of a non-photosensitive wavelength of a resist applied on the wafer 6 is obliquely incident on the wafer 6 to form a slit image. The reflected light from the wafer 6 is re-formed as a slit image on a CCD light receiving sensor surface (not shown) in each light receiving system 8b. The CCD light-receiving sensor directly measures the position of the formed slit image and calculates the difference from the reference position (measures the inclination difference value between the surface near the alignment mark and the exposed reference surface of the wafer).
Then, the position of the slit light on the wafer 6 and the position of the reflection surface of the wafer 6 itself are calculated.

FIG. 2 is a diagram showing a measurement position for an exposure slit light beam by an exposure focus detector of a projection exposure apparatus according to a preferred embodiment of the present invention. The measurement positions (Fa, Fb, Fc, Ba, Bb,
Bc), as shown in FIG. 2, is separated from the exposure slit light beam by a predetermined distance in the Y direction which is the scanning direction. In this way, a predetermined distance away from the exposure slit light beam, Y
The measurement positions Fa, Fb, Fc and Ba, Bb,
The reason why Bc is symmetrical is to enable reciprocal scanning exposure. The reason why Bc is distant from the exposure slit light beam is to provide a time margin for focusing by performing measurement (read-ahead measurement) prior to exposure. In addition, reciprocal scanning exposure can be performed by arranging the light beam in contrast to the exposure slit light beam. In the present embodiment, the measurement slit for performing measurement is basically a three-piece set (F
a, Fb, Fc and Ba, Bb, Bc as a basic set), and coincide with the X direction which is the longitudinal direction of the exposure slit light beam. During scanning, the inside of the exposure shot is measured at predetermined pitches according to the measurement sample time,
From the Z-direction position information at each detection point, the height of the surface to be inspected and the surface inclination in the exposure slit area are calculated. This calculation is performed by the focus measurement system 13 from FIG. 1, and the calculated value is the same as the position information of the stage interference system.
2 and the stage drive control system 1
The wafer stage 7 is converted into a stage drive current by 1 and is driven in the Z, ωx, and ωy directions.

Next, the alignment system will be described with reference to FIG. Here, FIG. 3 is a view schematically showing a configuration of an alignment detector in a projection exposure apparatus according to a preferred embodiment of the present invention.

The alignment detector 9 determines the position of the alignment mark 6a on the surface of the wafer 6 in the X and Y directions perpendicular to the optical axis of the projection optical system 5 (FIG. 1), as well as the height of the surface near the alignment mark. Slope, that is, Z, ωx, ω
It is configured to be able to detect in the y direction. That is, the AM for detecting the position of the alignment mark 6a in the optical axis direction
It also has a function as a focus detection system 26. The alignment detector 9 is of a type that performs detection without the intervention of the projection lens 5, and is of an off-axis type.

The light beam emitted from the illumination optical system 21 including the light source is emitted to the main body of the alignment detector 9 via the light guide 22, reflected by the beam splitter 23, and passes through the mirror 24 to the alignment mark 6 a on the wafer 6. Light up. The signal light reflected by the alignment mark 6a on the wafer 6 sequentially enters the beam splitter 23 via the mirror 24 again. The signal light incident on the beam splitter 23 passes through the beam splitter 23 and
An alignment mark image is formed on the imaging surface 25a of the D camera 25. An image signal based on the alignment mark image from the CCD camera 25 is transferred to the alignment measurement system 14 and compares both the alignment mark image and a reference mark image (not shown) in the alignment detector 9 obtained in advance. The position of the alignment mark 6a in the X and Y directions is measured.

An AM (Alignment Mark) focus detection system 26 provided in the alignment detector 9 emits a light beam so that a surface near the alignment mark near the objective optical axis of the alignment detector 9 can be detected. Optical system 2
6a and a light receiving system 26b for detecting positional information of the reflected light are provided symmetrically with respect to the objective optical axis of the alignment detector 9. The light projecting system 26a and the light receiving system 26b are mounted three by three (not shown) as a whole, and the wafer surface position and the inclination (inclination difference value) of the surface near the alignment mark can be measured simultaneously.

Next, the basic sequence in the present embodiment will be described with reference to FIG. 1 and the flowchart shown in FIG. FIG. 4 is a flowchart of a basic sequence of the projection exposure apparatus according to a preferred embodiment of the present invention. Here, an exposure sequence for exposing a layer b in a semiconductor device manufacturing process composed of three patterns of layers a, b, and c in order from the wafer bulk layer will be described as an example. The b layer is positioned with the alignment mark of the a layer pattern as a target, and the alignment mark is also formed on the b layer by exposure for the positioning target of the c layer.

Step S1 (Job transfer and exposure sequence)
Nsu activation) first inputs the Job name and exposure sequence start signal from the input unit 17. The main control unit 15 searches the storage unit 16 for a Job that matches the input name, based on the input Job name, and reads the Job. Here, the Job held in the storage unit 16 calculates the exposure shot layout and exposure conditions, the position of the alignment mark for the b layer formed at the time of the a layer exposure for each wafer in the lot, and the nonlinear shift. History information, alignment mark position for c-layer formed at the time of b-layer exposure, and the like.

FIGS. 5A and 5B show an example of the exposure shot layout, sample shots, and alignment marks. Here, FIG. 5A is a diagram illustrating an example of an exposure shot layout and a sample shot according to the present embodiment, and FIG. 5B is a diagram illustrating an arrangement relationship of alignment marks according to the present embodiment. Each grid represents an exposure shot, and a hatched shot 51
54 to 54 are sample shots, and scribe lines 55 which are clearance areas with adjacent shots.
As shown in FIG. 5B, the alignment mark 5 for the b layer
1b is formed, and a c-layer alignment mark 51c is formed in the vicinity thereof by b-layer exposure.

The sequence parameters according to the read Job information are transferred to the synchronization control system 12 and a wafer / reticle transfer control system (not shown).

Step S2 (wafer reticle row)
D) The wafer reticle control system to which the sequence parameters have been transferred drives a wafer reticle transfer system (not shown ) to transfer the wafer 6 and the reticle 3 to the wafer stage 7 and the reticle stage 3, respectively. When the wafer 6 and the reticle 3 are transferred by the wafer / reticle transfer system,
, Coarse positioning is performed for each stage. Although the transfer source follows the sequence parameters, the wafer is usually loaded from a coater developer connected inline with the exposure apparatus, and the reticle is loaded from a reticle stocker in the projection exposure apparatus.

Step S3 (mark focus and
Global Alignment Measurement) The height, inclination, and position of the alignment mark for the b-layer of the sample shot along the Job are measured by the following procedure. Alignment mark 51b of shot 51
The wafer 6 is fed in such a manner that (see FIG. 5B) is positioned within the detection field of the alignment detector 9. Before the wafer 6 enters the alignment measurement for calculating the shot array grid, the AM focus detection system 26
The height Z _51b and the inclinations ωx _51b and ωy _{51b of the} surface near the alignment mark 51b are measured, and the wafer 6 is positioned so as to match the detection surface height of the alignment detector 9. Normally, this positioning is performed only in the height direction because the detected height difference due to the inclination of the alignment mark is small and negligible with respect to the detected depth.

[0056] After positioning, is calculated the position of the alignment mark 101b at the alignment detector 9 X, detects relates Y directions, the X detection value at the alignment measurement system 14, Y position (X _51, Y ₅₁₎ . After the measurement of the alignment mark 51b for the b-layer of the shot 51, the wafer 6 is moved and the alignment mark 5 for the c-layer adjacent in the detection visual field is moved.
1c is sent, and the height Z _51c and the inclination values ωx _51c and ωy _51c of the nearby surface are measured. In addition, for the b layer and c
The alignment marks for the layers are sufficiently close to each other so that their plane inclinations are almost equal, and ωx _51b = ωx _51c , ωy _51b
= Ωy _51c , this measurement is not performed.
The main measurement section determines whether or not to perform this measurement based on the distance between the alignment marks for the b-layer and the c-layer.

Next, the wafer 6 is moved by the wafer stage 7 and the shot 52 is sent into the detection field of the alignment detector 9, and the same measurement as that of the shot 51 is repeated until the measurement of the shot 54 is completed. Then, these detection results are transferred from the alignment measurement system 14 to the main control unit 15.

Step S4 (global tilt and non-line)
Shape shift amount calculating a linear correction equation calculation) after completion of all the alignment measurement, the main control unit 15, and the primary plane by the least square approximation from the height measurements Z _51b to Z _{54 b,} the wafer stage running surface (wafer image plane and Then, the inclinations ωwx and ωwy of the entire wafer with respect to the wafer plane 7 are calculated, and the Z, ωx, and ωy directions of the wafer stage 7 are corrected so that the primary plane coincides with the wafer image plane. This corrected Siemens is called global tilt correction.

Next, the inclination ([ωx _ib ], [ωy _ib ]) of the plane near the alignment mark for calculating the non-linear shift amount of the alignment mark (where i = 51 to 54, the same applies hereinafter) is obtained. The inclination of the vicinity surface of the alignment mark is calculated from the difference between the inclination of the vicinity surface at the time of alignment mark measurement and the inclination of the vicinity surface at the time of exposure formation of the alignment mark in consideration of the inclination (ωwx, ωwy) of the entire wafer. be able to. Here, the inclination of the neighboring surface at the time of alignment mark measurement is
The values measured in step S3 (ωx _ib , ωy _ib ,
ωx _ic , ωy _ic ), and the inclination of the neighboring surface at the time of forming the alignment mark exposure (that is, the inclination of the b-layer alignment mark formed at the time of the a-layer exposure ([ωx _iab ],
In the present embodiment, [ωy _{ia b} ])) is measured and calculated by the AM focus system before or after the a-layer exposure at the time of the a-layer exposure, is converted into history information in advance, and is stored in Job of the storage unit 16.
Stored within.

Therefore, the inclination ([ωx _ib ], [ωy] of the surface near the alignment mark for calculating the nonlinear shift amount
_ib ]) is the inclination ([ωx _iab ], [ω]) of the vicinity surface of the alignment mark for the b-layer formed at the time of exposing the a-layer in Job.
y _iab ]) is read out from the storage unit 16 and can be obtained from the equations (1) and (2) shown in Expression 2.

[0061]

(Equation 2) At the same time, the inclination ([ωx _ibc ], [ωy] of the vicinity surface of the c-layer alignment mark formed at the time of the b-layer exposure.
_ibc ]) can be calculated from the inclinations (ωx _ic , ωy _ic ) of the surface near the c-layer alignment mark measured in step S3 by the following equations (3) and (4).

[0062]

(Equation 3) These values ([ωx _ibc ], [ωy _ibc ]) are automatically saved as wafer mark tilt history information of the wafer in the c-layer exposure Job of the next process in the storage unit 16,
It will be used at the time of layer exposure.

The amount of nonlinear shift (シ フ ト_xi , △ _yi )
Can be calculated from the calculated inclination ([ωx _ib ], [ωy _ib ]) of the surface in the vicinity of the alignment mark, and the alignment measured values (X _i , X _i , Y _i ) to correct the true values ([X _i ], [Y
_i ]) can be obtained. Here, the thickness of the wafer is 2 h.

[0064]

(Equation 4) Then, a linear correction formula for the position is created (calculated) from these true values ([X _i ], [Y _i ]) to estimate the positions of all the exposure shots.

Step S5 (exposure) Scanning exposure is performed after the position of the exposure slit light beam coincides with the scanning start position of the first exposure shot area on the wafer 6. At the start of scanning, the wafer surface is made to coincide with the stage running surface by global tilt correction, and the Z, ωx, ωy of the wafer stage are determined in accordance with the focus look-ahead measurement value immediately before exposure.
To perform scanning exposure while focusing the shot area. Immediately after the exposure is completed, it moves to the next shot area, is positioned at the next scanning exposure start position, and then repeats the scanning exposure similarly. The shot areas are arranged in a two-dimensional lattice pattern on the wafer. Normally, shots in the same direction are sequentially exposed, and after the same row is exposed, the exposure is performed by changing the shot row to be exposed by stepping in the Y direction. Continue.

Step S6 (wafer replacement and termination) Scanning exposure is repeatedly performed, and after exposure of all shots is completed, the wafer 6 is unloaded from the wafer stage 7 and the processing is terminated. When exposure is performed subsequently, the wafer is replaced with a next exposure wafer.

By performing the above-described exposure sequence, it is possible to accurately calculate the amount of non-linear shift caused by the stress on the wafer surface due to the foreign material pinching between the pins and the wafer, or the deformation of the wafer surface due to the wafer suction holding. As a result, a correct position linearity correction equation based on global alignment can be obtained, and alignment accuracy and accompanying overlay accuracy can be improved.

Also, the tilt history information of the alignment mark used for the exposure process of the next layer is automatically obtained. Note that the exposure apparatus of the present embodiment is a scanner of the step-and-scan type, but the invention technology of the present embodiment can be applied to a stepper-type exposure apparatus in the same manner.

[Second Embodiment] Next, another preferred embodiment (second embodiment) of the present invention will be described.
In the first embodiment described above, the non-linear shift of the alignment mark is corrected using the tilt history information of the surface near the alignment mark. However, the present invention can be similarly applied to the correction of the position of the exposure shot. That is, the tilt of each exposure shot of the a layer obtained at the time of focus measurement before exposure is converted into history information, and the nonlinear shift is calculated from the difference from the focus measurement value obtained before exposure of the b layer, thereby correcting the exposure shot position. can do. In this case as well, it is necessary to convert the position shift amount of the exposure shot itself into history information and reflect it in the exposure position of the next layer exposure shot.

Also, based on the history information of the shift amount of the position of the exposure shot, the shift amount of the alignment mark position of the sample shot is subtracted from the alignment measurement value of the exposure process of the next layer to calculate the linear correction formula of the global alignment. In this way, the position of the alignment mark can be calibrated.

The nonlinear shift correction of the exposure shot of the present embodiment can be performed in the entire scanning direction in the exposure shot when the exposure apparatus is of a scanner type. The correction is only for the center position. As described above, in the present embodiment, it is possible to correct even the non-linear shift that occurs in each exposure shot, and it is possible to greatly improve the overlay accuracy.

In addition, during the exposure of the a-layer, which is the first layer, which does not perform alignment with the underlying pattern, the amount of nonlinear shift due to the inclination of each exposure shot can be reflected in the exposure shot position. At this time, when the tilt is eliminated in each exposure shot, the non-linear shift with respect to the absolute grating is eliminated, which means that the non-linear shift occurs in proportion to the tilt. Therefore, it is only necessary to correct the exposure position in proportion to the tilt amount of the exposure shot of the layer without using the history information of the tilt of each exposure shot in the exposure process of the previous layer. As for the alignment mark, the inclination near the mark and the amount of non-linear shift of the mark at the time of exposure of the corresponding sample shot are converted into history information and reflected in global alignment.

[Embodiment of Semiconductor Production System]
Devices such as semiconductors using the above-described exposure apparatus (semiconductor chips such as ICs and LSIs, liquid crystal panels, CCs)
D, a thin-film magnetic head, a micromachine, etc.). In this method, maintenance services such as troubleshooting and periodic maintenance of a manufacturing apparatus installed in a semiconductor manufacturing factory or provision of software are performed using a computer network outside the manufacturing factory.

FIG. 7 shows the whole system cut out from a certain angle. In the figure, reference numeral 101 denotes a business establishment of a vendor (apparatus supply maker) that provides a semiconductor device manufacturing apparatus. As an example of a manufacturing apparatus, a semiconductor manufacturing apparatus for various processes used in a semiconductor manufacturing plant, for example,
Pre-process equipment (lithography equipment such as exposure equipment, resist processing equipment, etching equipment, heat treatment equipment, film formation equipment,
It is assumed that flattening equipment and the like and post-processing equipment (assembly equipment, inspection equipment, etc.) are used. In the business office 101, a host management system 10 for providing a maintenance database of manufacturing equipment
8. It has a plurality of operation terminal computers 110 and a local area network (LAN) 109 connecting these to construct an intranet or the like. Host management system 1
Reference numeral 08 includes a gateway for connecting the LAN 109 to the Internet 105, which is an external network of the business office, and a security function for restricting external access.

On the other hand, reference numerals 102 to 104 denote semiconductor manufacturers (semiconductor device manufacturers) as users of the manufacturing apparatus.
Is a manufacturing factory. The manufacturing factories 102 to 104 may be factories belonging to different manufacturers or factories belonging to the same manufacturer (for example, a factory for a pre-process, a factory for a post-process, etc.). In each of the factories 102 to 104, a plurality of manufacturing apparatuses 106, a local area network (LAN) 111 connecting them to construct an intranet or the like, and a host as a monitoring apparatus for monitoring the operation status of each manufacturing apparatus 106 are provided. A management system 107 is provided. The host management system 107 provided in each of the factories 102 to 104 includes a gateway for connecting the LAN 111 in each of the factories to the Internet 105 which is an external network of the factory. As a result, access from the LAN 111 of each factory to the host management system 108 on the vendor 101 side via the Internet 105 is possible, and only users limited by the security function of the host management system 108 are permitted to access. Specifically, via the Internet 105,
In addition to the status information indicating the operation status of each manufacturing apparatus 106 (for example, the symptom of the manufacturing apparatus in which the trouble has occurred) is notified from the factory side to the vendor side, the response information corresponding to the notification (for example, an instruction method for the trouble) is given. Information
Software and data for coping), the latest software, and maintenance information such as help information can be received from the vendor. A communication protocol (TCP / IP) generally used on the Internet is used for data communication between each of the factories 102 to 104 and the vendor 101 and data communication with the LAN 111 in each of the factories. In addition,
Instead of using the Internet as an external network outside the factory, it is also possible to use a high-security dedicated line network (such as ISDN) without access from a third party. Further, the host management system is not limited to the one provided by the vendor, and a user may construct a database and place it on an external network, and permit access from a plurality of factories of the user to the database.

FIG. 8 is a conceptual diagram showing the entire system according to the present embodiment cut out from an angle different from that of FIG. In the above example, a plurality of user factories each having a manufacturing device and a management system of a vendor of the manufacturing device are connected via an external network, and the production management of each factory and at least one device are connected via the external network. Data communication of the information of the manufacturing apparatus. On the other hand, in this example, a factory equipped with manufacturing equipment of a plurality of vendors is connected to a management system of each of the plurality of manufacturing equipments via an external network outside the factory, and maintenance information of each manufacturing equipment is stored. It is for data communication. In the figure, reference numeral 201 denotes a manufacturing plant of a manufacturing apparatus user (semiconductor device manufacturer), and a manufacturing line for performing various processes, for example, an exposure apparatus 202, a resist processing apparatus 203;
A film forming apparatus 204 is introduced. Although FIG. 8 shows only one manufacturing factory 201, a plurality of factories are actually networked in the same manner. Each device in the factory is connected by a LAN 206 to form an intranet or the like, and a host management system 205 manages the operation of the production line. On the other hand, an exposure apparatus maker 210, a resist processing apparatus maker 220, a film forming apparatus maker 230, etc.
Each business establishment of the vendor (device supply maker) is provided with a host management system 211, 221, 231 for remote maintenance of the supplied equipment, and these are provided with the maintenance database and the gateway of the external network as described above. . The host management system 205 that manages each device in the user's manufacturing factory and the vendor management systems 211, 221, and 231 of each device are connected to the external network 20.
0 or a dedicated line network. In this system, if a trouble occurs in any of a series of manufacturing equipment in the manufacturing line, the operation of the manufacturing line is stopped, but remote maintenance is performed from the vendor of the troubled equipment via the Internet 200. As a result, quick response is possible, and downtime of the production line can be minimized.

Each manufacturing apparatus installed in the semiconductor manufacturing factory has a display, a network interface, and a computer for executing network access software and apparatus operation software stored in a storage device. The storage device is a built-in memory, a hard disk, a network file server, or the like. The network access software includes a dedicated or general-purpose web browser, and provides, for example, a user interface having a screen as shown in FIG. 9 on a display. The operator who manages the manufacturing equipment at each factory, refers to the screen and checks the model of the manufacturing equipment 40
1, serial number 402, trouble subject 403,
Date of occurrence 404, urgency 405, symptom 406, coping method 40
7. Information such as progress 408 is input to input items on the screen. The input information is transmitted to the maintenance database via the Internet, and the resulting appropriate maintenance information is returned from the maintenance database and presented on the display. Further, the user interface provided by the web browser further includes a hyperlink function 410,
411, 412, the operator can access more detailed information of each item, pull out the latest version of software used for manufacturing equipment from the software library provided by the vendor, and provide an operation guide for the factory operator's reference (Help information). Here, the maintenance information provided by the maintenance database includes the information on the present invention described above, and the software library also provides the latest software for realizing the present invention.

Next, a semiconductor device manufacturing process using the above-described production system will be described. FIG.
Shows the flow of the entire semiconductor device manufacturing process. In step 1 (circuit design), the circuit of the semiconductor device is designed. Step 2 is a process for making a mask on the basis of the circuit pattern design. On the other hand, in step 3 (wafer manufacturing), a wafer is manufactured using a material such as silicon. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the prepared mask and wafer. The next step 5 (assembly) is called a post-process, and is a process of forming a semiconductor chip using the wafer produced in step 4, and an assembly process (dicing, dicing,
Bonding), an assembly process such as a packaging process (chip encapsulation) and the like. In step 6 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device manufactured in step 5 are performed. Through these steps, a semiconductor device is completed and shipped (step 7). The pre-process and the post-process are performed in separate dedicated factories, and maintenance is performed for each of these factories by the above-described remote maintenance system. Also, between the pre-process factory and the post-process factory,
Information and the like for production management and device maintenance are communicated via the Internet or a dedicated line network.

FIG. 11 shows a detailed flow of the wafer process. Step 11 (oxidation) oxidizes the wafer's surface. Step 12 (CVD) forms an insulating film on the wafer surface. Step 13 (electrode formation) forms electrodes on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted into the wafer. In step 15 (resist processing), a photosensitive agent is applied to the wafer.
Step 16 (exposure) uses the above-described exposure apparatus to print and expose the circuit pattern of the mask onto the wafer. Step 17 (development) develops the exposed wafer. In step 18 (etching), portions other than the developed resist image are removed. In step 19 (resist stripping), unnecessary resist after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer. Since the manufacturing equipment used in each process is maintained by the remote maintenance system described above, troubles can be prevented beforehand, and if troubles occur, quick recovery is possible. Productivity can be improved.

[0080]

As described above, according to the present invention,
The position correction can be performed by accurately calculating the alignment mark and the nonlinear shift of the exposure shot due to the distortion of the substrate surface direction when chucking the substrate of the wafer etc., and performing the exposure after performing the nonlinear shift position correction Thereby, overlay accuracy can be greatly improved.

[Brief description of the drawings]

FIG. 1 is a configuration diagram schematically showing a projection exposure apparatus according to a preferred embodiment of the present invention.

FIG. 2 is a diagram showing a measurement position for an exposure slit light beam by an exposure focus detector in a projection exposure apparatus according to a preferred embodiment of the present invention.

FIG. 3 is a diagram schematically showing a configuration of an alignment detector in a projection exposure apparatus according to a preferred embodiment of the present invention.

FIG. 4 is a flowchart of a basic sequence in a projection exposure apparatus according to a preferred embodiment of the present invention.

FIG. 5 is a view showing an example of an exposure shot layout, sample shots, and alignment marks in a projection exposure apparatus according to a preferred embodiment of the present invention. (A) A diagram showing an example of an exposure shot layout and a sample shot. FIG. 4B is a diagram illustrating an example of an arrangement relationship of alignment marks.

FIG. 6 is a schematic diagram for explaining a non-linear shift in a wafer suction-held by a pin contact chuck of a projection exposure apparatus.

FIG. 7 is a conceptual view of a semiconductor device production system including an exposure apparatus according to an embodiment of the present invention as viewed from a certain angle.

FIG. 8 is a conceptual diagram of a semiconductor device production system including an exposure apparatus according to an embodiment of the present invention, viewed from another angle.

FIG. 9 is a diagram showing a specific example of a user interface in a semiconductor device production system including an exposure apparatus according to an embodiment of the present invention.

FIG. 10 is a diagram illustrating a flow of a device manufacturing process by the exposure apparatus according to the embodiment of the present invention.

FIG. 11 is a diagram illustrating a wafer process by the exposure apparatus according to one embodiment of the present invention.

[Explanation of symbols]

1: exposure light source (excimer laser), 2: beam shaping optical system, 3: reticle (original), 4: reticle stage,
5: projection optical system, 6: wafer (substrate), 6a: wafer alignment mark, 7: wafer stage, 7a: wafer chuck, 8: (exposure) focus detector, 8a: light projection system, 8b: light receiving system, 9 : Alignment detector, 11: stage drive control system, 12: synchronous control system, 13: focus measurement system, 14: alignment measurement system, 15: main control unit, 16: storage unit, 17: input unit, 21: illumination optics system,
22: light guide, 23: beam splitter, 24:
Mirror, 25: CCD camera, 25a: imaging surface, 26:
AM focus detection system, 26a: light projecting system, 26b: light receiving system, 51, 52, 53, 54: sample shot, 51
b, 51c: alignment mark, 55: scribe line, 101: vendor's office, 102, 103, 10
4: Manufacturing plant, 105: Internet, 106: Manufacturing equipment, 107: Factory host management system, 108: Vendor host management system, 109: Vendor local area network (LAN), 110: Operation terminal computer, 111 : Factory local area network (LAN), 200: external network, 201:
Manufacturing apparatus user's manufacturing factory, 202: exposure apparatus, 20
3: resist processing apparatus, 204: film formation processing apparatus, 20
5: Factory host management system, 206: Factory local area network (LAN), 210: Exposure equipment maker, 211: Host management system of the exposure equipment maker's office, 220: Resist processing equipment maker, 221: Resist processing equipment Host management system of the manufacturer's office,
230: film forming apparatus maker, 231: host management system of the office of the film forming apparatus maker, 401: model of manufacturing apparatus,
402: serial number, 403: trouble subject,
404: Date of occurrence, 405: Urgency, 406: Symptom, 40
7: coping method, 408: progress, 410, 411, 412:
Hyperlink function.

 ──────────────────────────────────────────────────続 き Continued on front page (72) Inventor Yukio Takabayashi 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (72) Inventor Izumi Tsukamoto 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon F term (reference) 5F046 AA28 BA04 BA05 CC01 CC03 CC05 DA05 DA14 DB05 DC09 EB01 EB07 ED02 FA10 FA20 FC03 FC04 FC05

Claims (23)

[Claims] 1. An exposure apparatus for projecting an original pattern onto a plurality of exposure shots of a surface to be exposed on a substrate via a projection optical system, comprising: an alignment detector for detecting a position of an alignment mark formed on the substrate; Means for measuring a tilt difference value between the near surface and the exposed reference surface of the substrate,
Means for correcting a measurement value of the position of the alignment mark from the inclination difference value. 2. An exposure apparatus, comprising: means for holding or storing a history value of a tilt difference between the surface near the alignment mark and the reference surface to be exposed at the time of forming the alignment mark exposure; and the tilt difference value and the history value. 2. The exposure apparatus according to claim 1, further comprising: means for correcting a measured value of the position of the alignment mark based on a difference between the alignment mark and the measured value. 3. The exposure apparatus further includes alignment means for estimating the position of all exposure shots based on the detection result of the alignment detector and positioning the exposure shot at an exposure angle of view of the projection optical system. The exposure apparatus according to claim 1, wherein: 4. The alignment detector according to claim 1, wherein the means for measuring a difference in inclination between the surface near the alignment mark and a reference surface to be exposed of the substrate is provided in the alignment detector. 2. The exposure apparatus according to claim 1. 5. The exposure apparatus according to claim 1, wherein the exposure apparatus measures an inclination difference value between a surface near the alignment mark and a reference surface to be exposed of the substrate, and stores the difference value as a history value in the storage unit. The exposure apparatus according to any one of claims 1 to 4. 6. The storage unit according to claim 1, wherein the storage unit holds or stores at least a history value of the tilt difference as a parameter of a job file that is an information file necessary for an exposure process. 2. The exposure apparatus according to claim 1. 7. The exposure apparatus according to claim 1, wherein the inclined surface of the reference surface to be exposed is a global tilt surface. 8. An exposure apparatus for projecting an original pattern onto a plurality of exposure shots on a substrate exposure surface via a projection optical system, wherein a first detection for detecting a position of an alignment mark formed on the substrate exposure surface An exposure apparatus, comprising: a detector; and a second detector for measuring a height and an inclination of a surface near the alignment mark. 9. Based on a measurement value of the second detector,
9. The exposure apparatus according to claim 8, wherein the measurement value of the first detector is corrected. 10. A storage means for holding or storing history values of the surface near the alignment mark and the reference surface to be exposed at the time of forming the exposure of the alignment mark, and an inclination between the surface near the alignment mark and the reference surface to be exposed of the substrate. 10. The exposure apparatus according to claim 8, further comprising means for calculating a difference value, wherein the measurement value of the position of the alignment mark is corrected based on a difference between the tilt difference value and the history value. 11. An exposure apparatus for projecting, via a projection optical system, an original pattern onto a plurality of exposure shots onto which another pattern on a substrate exposure surface has been transferred, wherein the height and inclination of all exposure shots with respect to the exposure reference surface Focusing means for measuring the shot focus value to be coincident with the original pattern image plane of the projection optical system, and another pattern focus value which is a height and an inclination with respect to a reference surface to be exposed at the time of transfer exposure of the another pattern. Means for correcting the exposure shot position from the difference between the history values of the exposure shots, and the correction amount of the exposure shot position of a part of the plurality of exposure shots used for alignment in the next exposure process is held or stored as a history value Means for reflecting the history value as an offset during the alignment of the next exposure process. Exposure apparatus according to claim Rukoto. 12. The exposure apparatus according to claim 11, wherein the storage unit holds or stores at least the two history values as parameters of a job file that is an information file required for an exposure process. 13. An alignment mark detector for detecting an alignment mark position formed on a part of sample shots of the plurality of exposure shots, and estimating positions of all exposure shots based on a detection result of the alignment mark detector. Aligning means for positioning the exposure shot at the exposure angle of view of the projection optical system; means for measuring a tilt difference value between a surface near the alignment mark and a reference surface to be exposed of the substrate; Storage means for holding or storing the history value of the tilt difference between the alignment mark vicinity surface and the exposed reference surface, and the difference between the tilt difference value and the history value of the tilt difference prior to estimating the positions of all the exposure shots. 12. The apparatus according to claim 11, further comprising: a unit that corrects the measured value of the alignment position from the above. 13. The exposure apparatus according to 12. 14. The exposure apparatus according to claim 13, wherein the means for measuring a difference in inclination between the surface near the alignment mark and the reference surface to be exposed of the substrate is provided in the alignment detector. . 15. An exposure apparatus for projecting an original pattern onto a plurality of exposure shots on a substrate exposure surface via a projection optical system, wherein an alignment mark position formed on a part of the plurality of exposure shots is detected. An exposure apparatus, comprising: an alignment mark detector to perform the measurement; and means for measuring a tilt of a surface near the alignment mark, and corrects a position of an exposure shot when exposing a first layer of the substrate. 16. The exposure apparatus according to claim 1, further comprising a display, a network interface, and a computer that executes network software, and stores maintenance information of the exposure apparatus in a computer network. Exposure apparatus capable of performing data communication via a personal computer. 17. The network software,
Provided on the display is a user interface for accessing a maintenance database provided by a vendor or a user of the exposure apparatus connected to an external network of a factory where the exposure apparatus is installed, and from the database via the external network. The exposure apparatus according to claim 16, wherein information can be obtained. 18. An exposure method for exposing an original pattern onto a plurality of exposure shots on a surface to be exposed on a substrate via a projection optical system, wherein a job name of a job file which is an information file required for an exposure process and an exposure sequence start-up Input the signal,
Transferring a sequence parameter according to the information of the job file to start an exposure sequence, loading the substrate and / or the original based on the transferred sequence parameter; Measuring the height, inclination and position of the alignment mark of the sample shot of the substrate,
After the completion of all alignment measurements, a global tilt correction is performed, and the nonlinear shift amount and / or
Or a step of calculating a linear correction formula, a step of performing scanning exposure, and a step of exchanging for the next substrate or ending the exposure when performing subsequent exposure after exposure of all shots is completed. Exposure method. 19. A step of installing a group of manufacturing apparatuses for various processes including the exposure apparatus according to claim 1 in a semiconductor manufacturing plant, and performing a plurality of processes using the group of manufacturing apparatuses. A method of manufacturing a semiconductor device. 20. A step of connecting the group of manufacturing apparatuses via a local area network, and data communication between at least one of the group of manufacturing apparatuses between the local area network and an external network outside the semiconductor manufacturing plant. 20. The method according to claim 19, further comprising the step of: 21. A database provided by a vendor or a user of the exposure apparatus, which is accessed via the external network to obtain maintenance information of the manufacturing apparatus by data communication, or a semiconductor manufacturing factory different from the semiconductor manufacturing factory. 3. The production management is performed by performing data communication between the apparatus and the external network.
0. The method for manufacturing a semiconductor device according to item 0. 22. A group of manufacturing apparatuses for various processes including the exposure apparatus according to claim 1, a local area network connecting the group of manufacturing apparatuses, and a local area network connected to the outside of the factory. A semiconductor manufacturing plant, comprising: a gateway that allows access to an external network of the semiconductor device, and enables data communication of information on at least one of the manufacturing apparatus groups. 23. The semiconductor device according to claim 1, which is installed in a semiconductor manufacturing plant.
18. The maintenance method for an exposure apparatus according to any one of claims 17 to 17, wherein a vendor or a user of the exposure apparatus provides a maintenance database connected to an external network of the semiconductor manufacturing plant; Permitting access to the maintenance database from the inside via the external network, and transmitting maintenance information stored in the maintenance database to the semiconductor manufacturing factory via the external network. Maintenance method of the exposure apparatus.