CN113218315A - Thickness measuring method, device and system - Google Patents
Thickness measuring method, device and system Download PDFInfo
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- CN113218315A CN113218315A CN202110485246.2A CN202110485246A CN113218315A CN 113218315 A CN113218315 A CN 113218315A CN 202110485246 A CN202110485246 A CN 202110485246A CN 113218315 A CN113218315 A CN 113218315A
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- G—PHYSICS
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- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0608—Height gauges
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
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Abstract
The embodiment of the invention relates to the technical field of measuring methods, and discloses a thickness measuring method, device and system.
Description
Technical Field
The embodiment of the invention relates to the technical field of measuring methods, in particular to a thickness measuring method, device and system.
Background
Integrated circuits include various semiconductor devices, and in the semiconductor devices, wafers such as silicon wafers are generally used as substrates or base layers of chips, and then semiconductor integrated circuit processes such as photoetching, etching, thin films and the like are adopted for processing to manufacture various electronic component assemblies and wires, so that a miniaturized and high-integration semiconductor chip is manufactured. In the process of manufacturing such semiconductor devices, in order to ensure high yield of production of wafers such as silicon wafers, the 3D profile measuring instrument measurement method becomes a widely applied solution at present due to its unique high efficiency, accuracy and non-contact property.
In implementing the embodiments of the present invention, the inventors found that at least the following problems exist in the above related art: at present, the thickness measurement of a 3D contour measuring instrument depends on monitoring of temperature change inside the measuring instrument, temperature compensation is carried out on a measured value through coefficient calculation, the method is only suitable for correcting the condition that the temperature change is slow, or the production environment requiring constant temperature cannot accurately correct normal room temperature change. Therefore, the method needs personnel to stop under specific conditions, executes a standard calibration program, stops and checks a high-speed running production line to a certain extent, influences the production efficiency, and cannot ensure the accuracy of measured data.
Disclosure of Invention
The embodiment of the application provides a thickness measuring method, device and system with high accuracy.
The purpose of the embodiment of the invention is realized by the following technical scheme:
in order to solve the above technical problem, in a first aspect, an embodiment of the present invention provides a thickness measuring method applied to a thickness measuring system, where the method includes:
acquiring the current detection thickness of an object to be detected;
obtaining the thickness variation of a calibration object to obtain the temperature drift variation of the object to be measured;
and compensating the current detection thickness according to the temperature drift variation to obtain the actual thickness of the object to be detected.
In some embodiments, the thickness measuring device comprises a first three-dimensional profile measuring instrument and a second three-dimensional profile measuring instrument which have opposite light emitting directions,
the obtaining of the current detection thickness of the object to be detected further includes:
acquiring first height data of a preset number of objects to be measured through the first three-dimensional profile measuring instrument;
acquiring second height data of a preset number of objects to be measured through the second three-dimensional profile measuring instrument;
and calculating to obtain the current detection thickness of the object to be detected according to the first height data and the second height data.
In some embodiments, the calculating, according to the first height data and the second height data, a current detection thickness of the object to be detected further includes:
selecting N effective pixel points in the preset number of first height data and the second height data, wherein the pixel points from the nth pixel point to the (N + N) th pixel point are effective pixel points, and N and N are positive integers;
calculating the current detection thickness of the object to be detected according to the first height data and the second height data of the N effective pixel points, wherein the calculation formula is as follows:
wherein, T1Is the current detected thickness, Z, of the object to be measuredaIs said first height data, ZbFor the second height data, N1The number n of effective pixel points in the first height data or the second height data of the object to be detected1And the serial number of the first effective pixel point in the first height data or the second height data of the object to be detected is used as the serial number of the first effective pixel point in the first height data or the second height data of the object to be detected.
In some embodiments, before the obtaining the current detected thickness of the object under test, the method further comprises:
judging whether the scanning light rays emitted by the first three-dimensional profile measuring instrument and the second three-dimensional profile measuring instrument can be completely overlapped during correlation;
if not, adjusting the position or the light emitting direction of the first three-dimensional profile measuring instrument or the second three-dimensional profile measuring instrument so as to enable the scanning light rays of the two three-dimensional profile measuring instruments to be completely overlapped when being oppositely emitted.
In some embodiments, the number of the calibration objects is at least one, the calibration objects are arranged on two sides of the object to be measured, and the thickness direction of the calibration objects is consistent with the thickness direction of the object to be measured when the calibration objects are placed,
the obtaining of the thickness variation of the calibration object to obtain the temperature drift variation of the object to be measured further includes:
respectively acquiring current average thickness data of the at least one calibration object;
acquiring standard thickness data of the calibration object;
and calculating the temperature drift variation of the object to be measured according to the current average thickness data and the standard thickness data.
In some embodiments, the calibration objects include a first calibration object and a second calibration object,
the respectively obtaining the current average thickness data of the at least one calibration object further includes:
and respectively acquiring the current thickness data of the at least one calibration object through the first three-dimensional profile measuring instrument and the second three-dimensional profile measuring instrument so as to calculate and obtain the current average thickness data of the at least one calibration object.
In some embodiments, the calculation formula of the current thickness data of the first calibration object is as follows:
wherein, T2Is the current thickness data, Z, of the first calibration objectcFirst height data, Z, of the first calibration object acquired by the first three-dimensional profile measuring instrumentdSecond height data, N, of the first calibration object acquired by the second three-dimensional profile measuring instrument2The number n of effective pixel points in the first height data or the second height data of the first calibration object2The first height data or the second height data of the first calibration objectThe serial number of the valid pixel.
In some embodiments, the calculation formula of the current thickness data of the second calibration object is as follows:
wherein, T3Is the current thickness data, Z, of the second calibration objecteFirst height data, Z, of the second calibration object acquired by the first three-dimensional profile measuring instrumentfSecond height data, N, of the second calibration object acquired by the second three-dimensional profile measuring instrument3The number n of effective pixel points in the first height data or the second height data of the second calibration object3And the serial number of the first effective pixel point in the first height data or the second height data of the second calibration object is used as the serial number of the first effective pixel point in the second height data.
In some embodiments, the calculation formula for calculating the current average thickness data of the at least one calibration object is as follows:
wherein, T0Is the current average thickness data, T, of the at least one calibration object2Is the current thickness data, T, of the first calibration object3And the current thickness data of the second calibration object.
In some embodiments, the temperature drift variation is calculated according to the current average thickness data and the standard thickness data, and the current detected thickness is compensated to obtain the actual thickness of the object to be detected, where the calculation formula is as follows:
wherein,is the actual thickness, T, of the object to be measured1Is the current detected thickness, T, of the object to be measured0And C is a calibration constant, and is the current average thickness data of the at least one calibration object.
In order to solve the above technical problem, in a second aspect, an embodiment of the present invention provides a thickness measuring apparatus applied to a thickness measuring system, where the apparatus includes:
the first acquisition module is used for acquiring the current detection thickness of the object to be detected;
the second acquisition module is used for acquiring the thickness variation of the calibration object so as to obtain the temperature drift variation of the object to be measured;
and the compensation module is used for compensating the current detection thickness according to the temperature drift variation so as to obtain the actual thickness of the object to be detected.
In some embodiments, the thickness measuring device comprises a first three-dimensional profile measuring instrument and a second three-dimensional profile measuring instrument which have opposite light emitting directions,
the first acquisition module is further used for acquiring a preset number of first height data of the object to be detected through the first three-dimensional profile measuring instrument, acquiring a preset number of second height data of the object to be detected through the second three-dimensional profile measuring instrument, and calculating to obtain the current detection thickness of the object to be detected according to the first height data and the second height data.
In some embodiments, the first obtaining module is further configured to select N effective pixels in the preset number of first height data and the second height data, where N and N are positive integers from the nth pixel to the N + nth pixel; calculating the current detection thickness of the object to be detected according to the first height data and the second height data of the N effective pixel points, wherein the calculation formula is as follows:
wherein, T1Is the current detected thickness, Z, of the object to be measuredaIs said first height data, ZbFor the second height data, N1The number n of effective pixel points in the first height data or the second height data of the object to be detected1And the serial number of the first effective pixel point in the first height data or the second height data of the object to be detected is used as the serial number of the first effective pixel point in the first height data or the second height data of the object to be detected.
In some embodiments, the thickness measuring apparatus further comprises:
and the judging module is used for judging whether the scanning light rays emitted by the first three-dimensional profile measuring instrument and the second three-dimensional profile measuring instrument can be completely overlapped during the correlation, and if not, adjusting the position or the light emitting direction of the first three-dimensional profile measuring instrument or the second three-dimensional profile measuring instrument so as to ensure that the scanning light rays of the two three-dimensional profile measuring instruments are completely overlapped during the correlation.
In some embodiments, the number of the calibration objects is at least one, the calibration objects are arranged on two sides of the object to be measured, and the thickness direction of the calibration objects is consistent with the thickness direction of the object to be measured when the calibration objects are placed,
the second obtaining module is further configured to obtain current average thickness data of the at least one calibration object, obtain standard thickness data of the calibration object, and calculate the temperature drift variation of the object to be measured according to the current average thickness data and the standard thickness data.
In some embodiments, the calibration objects include a first calibration object and a second calibration object,
the second obtaining module is further configured to obtain current thickness data of the at least one calibration object through the first three-dimensional profile measuring instrument and the second three-dimensional profile measuring instrument, so as to obtain current average thickness data of the at least one calibration object through calculation.
In some embodiments, the calculation formula of the current thickness data of the first calibration object is as follows:
wherein, T2Is the current thickness data, Z, of the first calibration objectcFirst height data, Z, of the first calibration object acquired by the first three-dimensional profile measuring instrumentdSecond height data, N, of the first calibration object acquired by the second three-dimensional profile measuring instrument2The number n of effective pixel points in the first height data or the second height data of the first calibration object2And the serial number of the first effective pixel point in the first height data or the second height data of the first calibration object is used as the serial number of the first effective pixel point.
In some embodiments, the calculation formula of the current thickness data of the second calibration object is as follows:
wherein, T3Is the current thickness data, Z, of the second calibration objecteFirst height data, Z, of the second calibration object acquired by the first three-dimensional profile measuring instrumentfSecond height data, N, of the second calibration object acquired by the second three-dimensional profile measuring instrument3The number n of effective pixel points in the first height data or the second height data of the second calibration object3And the serial number of the first effective pixel point in the first height data or the second height data of the second calibration object is used as the serial number of the first effective pixel point in the second height data.
In some embodiments, the calculation formula for calculating the current average thickness data of the at least one calibration object is as follows:
wherein, T0For said at least one calibration objectCurrent average thickness data of, T2Is the current thickness data, T, of the first calibration object3And the current thickness data of the second calibration object.
In some embodiments, the temperature drift variation is calculated according to the current average thickness data and the standard thickness data, and the current detected thickness is compensated to obtain the actual thickness of the object to be detected, where the calculation formula is as follows:
wherein,is the actual thickness, T, of the object to be measured1Is the current detected thickness, T, of the object to be measured0And C is a calibration constant, and is the current average thickness data of the at least one calibration object.
In order to solve the above technical problem, in a third aspect, an embodiment of the present invention provides a thickness measuring system, including:
an object to be measured;
at least one calibration object;
the two three-dimensional profile measuring instruments are used for acquiring the thickness data of the object to be measured and the calibrated object;
at least one processor connected with the two three-dimensional profile measuring instruments; and the number of the first and second groups,
a memory coupled to the at least one processor; wherein,
the memory stores instructions executable by the at least one processor in connection with the two three-dimensional profilometers, the instructions being executable by the at least one processor in connection with the two three-dimensional profilometers to enable the at least one processor, in connection with the two three-dimensional profilometers, to perform the method of the first aspect as described above.
In some embodiments, the at least one calibration object is fixed to one of the two three-dimensional profile measuring instruments and is disposed within the field of view of the two three-dimensional profile measuring instruments.
In order to solve the above technical problem, in a fourth aspect, an embodiment of the present invention further provides a computer-readable storage medium storing computer-executable instructions for causing a computer to perform the method according to the first aspect.
In order to solve the above technical problem, in a fifth aspect, the present invention further provides a computer program product, which includes a computer program stored on a computer-readable storage medium, the computer program including program instructions, which, when executed by a computer, cause the computer to execute the method according to the first aspect.
Compared with the prior art, the invention has the beneficial effects that: different from the situation of the prior art, the thickness measuring method, the device and the system provided in the embodiment of the invention are characterized in that the method firstly obtains the current detection thickness of an object to be measured, then obtains the thickness variation of a calibration object to obtain the temperature drift variation of the object to be measured, and finally compensates the current detection thickness according to the temperature drift variation to obtain the actual thickness of the object to be measured.
Drawings
One or more embodiments are illustrated by the accompanying figures in the drawings that correspond thereto and are not to be construed as limiting the embodiments, wherein elements/modules and steps having the same reference numerals are represented by like elements/modules and steps, unless otherwise specified, and the drawings are not to scale.
Fig. 1 is a schematic diagram of an application environment of a thickness measuring method provided by an embodiment of the invention;
fig. 2 is a schematic flow chart of a thickness measuring method according to an embodiment of the present invention;
FIG. 3 is a schematic flow chart of a sub-process of step 110 in the thickness measuring method shown in FIG. 2;
FIG. 4 is a schematic flow chart of another thickness measuring method according to an embodiment of the present invention;
FIG. 5 is a schematic flow chart of a sub-process of step 120 of the thickness measuring method shown in FIG. 2;
fig. 6 is a schematic structural diagram of a thickness measuring device according to a second embodiment of the present invention;
fig. 7 is a schematic structural diagram of another thickness measuring device according to a second embodiment of the present invention;
fig. 8 is a schematic diagram of a hardware structure of a thickness measuring system according to a third embodiment of the present invention.
Detailed Description
The present invention will be described in detail with reference to specific examples. The following examples will assist those skilled in the art in further understanding the invention, but are not intended to limit the invention in any way. It should be noted that variations and modifications can be made by persons skilled in the art without departing from the spirit of the invention. All falling within the scope of the present invention.
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
It should be noted that, if not conflicted, the various features of the embodiments of the invention may be combined with each other within the scope of protection of the present application. Additionally, while functional block divisions are performed in apparatus schematics, with logical sequences shown in flowcharts, in some cases, steps shown or described may be performed in sequences other than block divisions in apparatus or flowcharts. Further, the terms "first," "second," and the like, as used herein, do not limit the data and the execution order, but merely distinguish the same items or similar items having substantially the same functions and actions.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
In order to solve the problem that the measurement data of the substrate thickness actually measured by a thickness measuring instrument is inaccurate due to temperature drift of chip substrates such as silicon wafers caused by the ambient temperature and the heat of a machine in the conventional thickness measuring instrument, the embodiment of the invention provides a thickness measuring method, a device and a system which can ensure the measurement accuracy for a long time and avoid the influence of the room temperature change on the measurement data.
Fig. 1 is a schematic diagram of an application environment of a thickness measuring method according to an embodiment of the present invention, where the application environment includes: the device comprises a first three-dimensional profile measuring instrument 11, a second three-dimensional profile measuring instrument 12, an object to be measured 13 and a calibration object 14.
The first three-dimensional profile measuring instrument 11 and the second three-dimensional profile measuring instrument 12 are measuring instruments that form a three-dimensional body by using a series of profile lines of an object, and are also called as 3D profile measuring instruments, the first three-dimensional profile measuring instrument 11 and the second three-dimensional profile measuring instrument 12 may be two identical three-dimensional profile measuring instruments, and the two three-dimensional profile measuring instruments need to be arranged such that the light emitting directions are opposite and the emitted light rays can be completely overlapped.
The object to be measured 13 is an object whose thickness needs to be measured, and may be various semiconductor devices applied in an integrated circuit or component parts in a semiconductor device, and the example shown in fig. 1 of the present invention is a silicon wafer. Further, the thickness measuring method provided by the embodiment of the present invention can also be used for measuring other size data such as the length, the width, and the like of the object to be measured 13.
The calibration object 14 is disposed on two sides of the first three-dimensional profile measuring instrument 11 and the second three-dimensional profile measuring instrument 12 in the field of view, and is fixed on the first three-dimensional profile measuring instrument 11, and the thickness direction of the calibration object is consistent with that of the object to be measured 13, and the calibration object 14 is a standard component for compensating an error of calibrating the object to be measured 13, so preferably, the calibration object 14 may be made of a material of the object to be measured 13, in an example of the present invention, the calibration object 14 is also a silicon wafer, and further, the object to be measured 13 with a standard size may be used as the calibration object 14. In other embodiments, the calibration object 14 may not be placed at the same level as the object to be measured 13, and only needs to be placed within the effective measurement range of the first three-dimensional profile measuring instrument 11 and the second three-dimensional profile measuring instrument 12, which is not limited by the embodiments of the present invention.
In addition, in the embodiment of the present invention, the data to be measured is the thickness of the object to be measured 13, and therefore, the object to be measured 13 and the calibration object 14 are placed between the first three-dimensional profile measuring instrument 11 and the second three-dimensional profile measuring instrument 12 along the thickness direction as shown in fig. 1.
Specifically, the embodiments of the present invention will be further explained below with reference to the drawings.
Example one
An embodiment of the present invention provides a thickness measuring method applied to a thickness measuring system, and please refer to fig. 2, which shows a flow of the thickness measuring method provided by the embodiment of the present invention, where the thickness measuring method includes, but is not limited to, the following steps:
step 110: acquiring the current detection thickness of an object to be detected;
in the embodiment of the invention, firstly, the current detection thickness of the object to be detected is measured and obtained through the measuring instrument, and the current detection thickness is the thickness data of the object to be detected at the current environment temperature, which can be measured and obtained by the measuring instrument under the current environment.
Step 120: obtaining the thickness variation of a calibration object to obtain the temperature drift variation of the object to be measured;
because the ambient temperature is changing at any time, and the measuring instrument may also cause the change of the ambient temperature around the object to be measured due to the self machine heating, in order to obtain the influence of the ambient temperature on the object to be measured, a calibration object is also needed to be set, the calibration object is preferably a standard component which is the same as the material of the object to be measured, and the influence of the ambient temperature on the current detection thickness of the measured object to be measured, namely the temperature drift change amount, is determined by detecting the thickness change amount of the current thickness and the standard size of the calibration object. Preferably, in the embodiment of the present invention, the thickness of the calibration object can be measured once every time one object to be measured is measured, and the variation of the temperature drift of the object to be measured is obtained by monitoring the variation of the thickness of the calibration object in real time, so as to compensate.
Step 130: and compensating the current detection thickness according to the temperature drift variation to obtain the actual thickness of the object to be detected.
In the embodiment of the invention, the temperature drift variation is determined according to the thickness variation of the calibration object, so that the deviation condition of the current detection thickness and the actual thickness of the object to be detected can be obtained, and the temperature drift variation is used as a compensation value to compensate the current detection thickness, so that the actual thickness of the object to be detected can be obtained.
Further, the thickness measuring apparatus includes a first three-dimensional profile measuring instrument and a second three-dimensional profile measuring instrument, which have opposite light emitting directions, please refer to fig. 3, which shows a sub-process of the above step 110, where the obtaining of the current detection thickness of the object to be detected further includes:
step 111: acquiring first height data of a preset number of objects to be measured through the first three-dimensional profile measuring instrument;
preferably, in the embodiment of the present invention, a silicon wafer is taken as an object to be measured, a three-dimensional profile measuring instrument is taken as an example, and specifically, referring to the application scenario shown in fig. 1, the first three-dimensional profile measuring instrument 11 acquires a distance from the first three-dimensional profile measuring instrument 11 to a surface of the object to be measured, which faces the first three-dimensional profile measuring instrument 11, so as to obtain the first height data.
Step 112: acquiring second height data of a preset number of objects to be measured through the second three-dimensional profile measuring instrument;
then, the second three-dimensional profile measuring instrument 12 acquires a distance from the second three-dimensional profile measuring instrument 12 to a surface of the object to be measured, which faces the second three-dimensional profile measuring instrument 12, to obtain the second height data.
Step 113: and calculating to obtain the current detection thickness of the object to be detected according to the first height data and the second height data.
And finally, according to the first height data and the second height data which are acquired, because the directions of the two three-dimensional profile measuring instruments are opposite, in one system, one of the height data measured by the two machines is positive and the other is negative, the height data and the positive and the negative are added, and the sum of the heights can obtain the current detection thickness of the object to be detected at the current scanning point.
Specifically, selecting N effective pixels in the preset number of first height data and the second height data, wherein the effective pixels are from the nth pixel to the N + nth pixel, and N and N are positive integers; calculating the current detection thickness of the object to be detected according to the first height data and the second height data of the N effective pixel points, wherein the calculation formula is as follows:
wherein, T1Is the current detected thickness, Z, of the object to be measuredaIs said first height data, ZbFor the second height data, N1The number n of effective pixel points in the first height data or the second height data of the object to be detected1And the serial number of the first effective pixel point in the first height data or the second height data of the object to be detected is used as the serial number of the first effective pixel point in the first height data or the second height data of the object to be detected.
Taking the light-emitting line widths of the first three-dimensional profile measuring instrument 11 and the second three-dimensional profile measuring instrument 12 as an example, the left side and the right side of the light-emitting light of the measuring instruments respectively shield a 4mm view field, and a line width of 8mm remains in the middle of the view field, so that the measuring instruments are used for measuring the thickness of the silicon wafer. During measurement, because the conventional silicon wafer is about 160mm long, an acquisition mode that a laser line is parallel to the motion direction is adopted, the number of pixels of every two outlines is 3200, the acquisition distance is kept to be 2mm, the consistency of the sampling distance is realized by using a high-resolution encoder, and the total number of sampling outlines is 80. Therefore, the calculation formula of the current detection thickness of the object to be detected can be expressed as follows:
wherein Z isaAnd ZbThe height data are respectively collected by the upper three-dimensional profile measuring instrument and the lower three-dimensional profile measuring instrument, and the average value of the sum of the height data and the height data at each collecting position is the final current detection thickness data of the object to be detected.
Further, please refer to fig. 4, which shows a flow of another thickness measuring method according to an embodiment of the present invention, before the obtaining of the current detection thickness of the object to be measured, the method further includes:
step 141: judging whether the scanning light rays emitted by the first three-dimensional profile measuring instrument and the second three-dimensional profile measuring instrument can be completely overlapped during correlation; if not, jumping to step 142; if yes, go to step 110;
step 142: and adjusting the position or the light emitting direction of the first three-dimensional profile measuring instrument or the second three-dimensional profile measuring instrument so as to enable the scanning light rays of the two three-dimensional profile measuring instruments to be completely overlapped when being emitted oppositely.
In the thickness measurement process, the first three-dimensional profile measuring instrument and the second three-dimensional profile measuring instrument need to be aligned in a physical manner. The standard silicon wafer is used as a light ray correction tool, the upper light ray and the lower light ray are corrected horizontally, and the polar light rays emitted by the two measuring instruments can be completely overlapped when being oppositely emitted. After the light ray profile is corrected, the silicon chip is placed in the visual fields of the first three-dimensional profile measuring instrument and the second three-dimensional profile measuring instrument, and the transverse positions of the upper laser line and the lower laser line are aligned through the positions of the edge points.
Further, the number of the calibration objects is at least one, and the thickness direction of the calibration objects is the same as the thickness direction of the object to be measured when the calibration objects are disposed on two sides of the object to be measured, please refer to fig. 5, which shows a sub-process of the above step 120, where the thickness variation of the calibration object is obtained to obtain the temperature drift variation of the object to be measured, further comprising:
step 121: respectively acquiring current average thickness data of the at least one calibration object;
and respectively acquiring the current thickness data of the at least one calibration object through the first three-dimensional profile measuring instrument and the second three-dimensional profile measuring instrument so as to calculate and obtain the current average thickness data of the at least one calibration object. Specifically, taking the example shown in fig. 1 as an example, two calibration objects 14 are provided, and the first three-dimensional profile measuring instrument and the second three-dimensional profile measuring instrument respectively obtain current thickness data of the first calibration object and the second calibration object.
The calculation formula of the current thickness data of the first calibration object is as follows:
wherein, T2Is the current thickness data, Z, of the first calibration objectcFirst height data, Z, of the first calibration object acquired by the first three-dimensional profile measuring instrumentdSecond height data, N, of the first calibration object acquired by the second three-dimensional profile measuring instrument2The number n of effective pixel points in the first height data or the second height data of the first calibration object2The order of the first effective pixel point in the first height data or the second height data of the first calibration object isNumber (n).
The calculation formula of the current thickness data of the second calibration object is as follows:
wherein, T3Is the current thickness data, Z, of the second calibration objecteFirst height data, Z, of the second calibration object acquired by the first three-dimensional profile measuring instrumentfSecond height data, N, of the second calibration object acquired by the second three-dimensional profile measuring instrument3The number n of effective pixel points in the first height data or the second height data of the second calibration object3And the serial number of the first effective pixel point in the first height data or the second height data of the second calibration object is used as the serial number of the first effective pixel point in the second height data.
Still taking the number of the two contour pixels in the above step 113 as 3200 and keeping the acquisition distance of 2mm as an example, the obtained calculation formula of the first calibration object and the second calibration object can be further expressed as:
in the stability consideration, 300 pixel points at two ends of the visual field are eliminated in the calculation process, and the number of the actually and effectively used pixel points is 2600.
Step 122: acquiring standard thickness data of the calibration object;
the standard thickness data is a standard thickness value of the calibration object at a certain temperature, and is set data, which can be data designed by software or a standard value of a standard component actually measured. Preferably, the first calibration object and the second calibration object arranged in the thickness measuring system can be two identical calibration objects, and the standard thickness data of the two calibration objects are identical.
Step 123: and calculating the temperature drift variation of the object to be measured according to the current average thickness data and the standard thickness data.
The calculation formula for obtaining the current average thickness data of the at least one calibration object by calculation is as follows:
wherein, T0Is the current average thickness data, T, of the at least one calibration object2Is the current thickness data, T, of the first calibration object3And the current thickness data of the second calibration object.
Based on this, for step 130, specifically, the temperature drift variation is calculated according to the current average thickness data and the standard thickness data, and the current detected thickness is compensated to obtain the actual thickness of the object to be detected, where the calculation formula is as follows:
wherein,is the actual thickness, T, of the object to be measured1Is the current detected thickness, T, of the object to be measured0And C is a calibration constant, and is the current average thickness data of the at least one calibration object.
Example two
An embodiment of the present invention provides a thickness measuring device, which is applied to a thickness measuring system, and please refer to fig. 6, which shows a structure of the thickness measuring device provided in the embodiment of the present invention, wherein the thickness measuring device 200 includes: a first acquisition module 210, a second acquisition module 220, and a compensation module 230.
A first obtaining module 210, configured to obtain a current detection thickness of an object to be detected;
the second obtaining module 220 is configured to obtain a thickness variation of the calibration object to obtain a temperature drift variation of the object to be measured;
and the compensation module 230 is configured to compensate the currently detected thickness according to the temperature drift variation, so as to obtain an actual thickness of the object to be detected.
In some embodiments, the thickness measuring apparatus includes a first three-dimensional profile measuring instrument and a second three-dimensional profile measuring instrument, where light emitting directions of the first three-dimensional profile measuring instrument and the second three-dimensional profile measuring instrument are opposite to each other, and the first obtaining module 210 is further configured to collect, by the first three-dimensional profile measuring instrument, first height data of a preset number of objects to be measured; acquiring second height data of a preset number of objects to be measured through the second three-dimensional profile measuring instrument; and calculating to obtain the current detection thickness of the object to be detected according to the first height data and the second height data.
In some embodiments, the first obtaining module 210 is further configured to select N effective pixels in the preset number of first height data and the second height data, where N and N are positive integers from the nth pixel to the N + nth pixel; calculating the current detection thickness of the object to be detected according to the first height data and the second height data of the N effective pixel points, wherein the calculation formula is as follows:
wherein, T1Is the current detected thickness, Z, of the object to be measuredaIs said first height data, ZbFor the second height data, N1The number n of effective pixel points in the first height data or the second height data of the object to be detected1And the serial number of the first effective pixel point in the first height data or the second height data of the object to be detected is used as the serial number of the first effective pixel point in the first height data or the second height data of the object to be detected.
In some embodiments, please refer to fig. 7, which illustrates a structure of another thickness measuring apparatus provided in an embodiment of the present invention, where the thickness measuring apparatus 200 further includes: a judging module 240, configured to judge whether scanning light beams emitted by the first three-dimensional profile measuring instrument and the second three-dimensional profile measuring instrument can be completely overlapped when they are emitted; if not, adjusting the position or the light emitting direction of the first three-dimensional profile measuring instrument or the second three-dimensional profile measuring instrument so as to enable the scanning light rays of the two three-dimensional profile measuring instruments to be completely overlapped when being oppositely emitted.
In some embodiments, the number of the calibration objects is at least one, the calibration objects are disposed on two sides of the object to be measured, and when the calibration objects are placed, the thickness direction of the calibration objects is consistent with the thickness direction of the object to be measured, and the second obtaining module 220 is further configured to obtain current average thickness data of the at least one calibration object respectively; acquiring standard thickness data of the calibration object; and calculating the temperature drift variation of the object to be measured according to the current average thickness data and the standard thickness data.
In some embodiments, the calibration objects include a first calibration object and a second calibration object, and the second obtaining module 220 is further configured to obtain the current thickness data of the at least one calibration object by the first three-dimensional profile measuring instrument and the second three-dimensional profile measuring instrument, respectively, so as to calculate the current average thickness data of the at least one calibration object.
In some embodiments, the calculation formula of the current thickness data of the first calibration object is as follows:
wherein, T2Is the current thickness data, Z, of the first calibration objectcFirst height data, Z, of the first calibration object acquired by the first three-dimensional profile measuring instrumentdSecond height data, N, of the first calibration object acquired by the second three-dimensional profile measuring instrument2The number n of effective pixel points in the first height data or the second height data of the first calibration object2And the serial number of the first effective pixel point in the first height data or the second height data of the first calibration object is used as the serial number of the first effective pixel point.
In some embodiments, the calculation formula of the current thickness data of the second calibration object is as follows:
wherein, T3Is the current thickness data, Z, of the second calibration objecteFirst height data, Z, of the second calibration object acquired by the first three-dimensional profile measuring instrumentfSecond height data, N, of the second calibration object acquired by the second three-dimensional profile measuring instrument3The number n of effective pixel points in the first height data or the second height data of the second calibration object3And the serial number of the first effective pixel point in the first height data or the second height data of the second calibration object is used as the serial number of the first effective pixel point in the second height data.
In some embodiments, the calculation formula for calculating the current average thickness data of the at least one calibration object is as follows:
wherein, T0Is the current average thickness data, T, of the at least one calibration object2Is the current thickness data, T, of the first calibration object3And the current thickness data of the second calibration object.
In some embodiments, the temperature drift variation is calculated according to the current average thickness data and the standard thickness data, and the current detected thickness is compensated to obtain the actual thickness of the object to be detected, where the calculation formula is as follows:
wherein,is the actual thickness, T, of the object to be measured1Is the current detected thickness, T, of the object to be measured0And C is a calibration constant, and is the current average thickness data of the at least one calibration object.
EXAMPLE III
An embodiment of the present invention further provides a thickness measuring system, please refer to fig. 8, which shows a hardware structure of the thickness measuring system capable of executing the thickness measuring method described in fig. 2 to fig. 5. The thickness measuring system 10 may be the thickness measuring system shown in fig. 1.
The thickness measuring system 10 includes: an object to be measured 13; at least one calibration object 14; and the two three-dimensional profile measuring instruments (11 and 12) are used for acquiring the thickness data of the object to be measured and the calibration object.
In some embodiments, the at least one calibration object 14 is fixed to one of the two three-dimensional profile measuring instruments (11 and 12) and is arranged in the field of view of the two three-dimensional profile measuring instruments (11 and 12). Specifically, in the embodiment of the present invention, the calibration object 14 is fixed on the extending plate of the first three-dimensional profile measuring instrument 11 and disposed on two sides of the first three-dimensional profile measuring instrument 11, and in some other embodiments, the position of the calibration object 14 can be set according to actual needs, and is not limited by the embodiment of the present invention.
The thickness measuring system 10 further includes: at least one processor 15 connected to the two three-dimensional profile measuring instruments 11 and 12; and a memory 16 connected to the at least one processor 15, one processor 15 being taken as an example in fig. 8. The memory 16 stores instructions executable by the at least one processor in connection with the two three-dimensional profile measuring instruments 15, the instructions being executable by the at least one processor in connection with the two three-dimensional profile measuring instruments 15 to enable the at least one processor in connection with the two three-dimensional profile measuring instruments 15 to perform the thickness measuring method described above with reference to fig. 2 to 5. The processor 15 and the memory 16 may be connected by a bus or other means, and fig. 8 illustrates the connection by a bus as an example.
The memory 16, which is a non-volatile computer-readable storage medium, may be used to store non-volatile software programs, non-volatile computer-executable programs, and modules, such as program instructions/modules corresponding to the thickness measuring method in the embodiment of the present application, for example, the modules shown in fig. 6 to 7. The processor 15 executes various functional applications of the server and data processing by running nonvolatile software programs, instructions and modules stored in the memory 16, namely, the thickness measuring method of the embodiment of the method is realized.
The memory 16 may include a storage program area and a storage data area, wherein the storage program area may store an operating system, an application program required for at least one function; the storage data area may store data created according to use of the thickness measuring device, and the like. Further, the memory 16 may include high speed random access memory, and may also include non-volatile memory, such as at least one magnetic disk storage device, flash memory device, or other non-volatile solid state storage device. In some embodiments, memory 16 optionally includes memory located remotely from processor 15, which may be connected to the thickness measuring device via a network. Examples of such networks include, but are not limited to, the internet, intranets, local area networks, mobile communication networks, and combinations thereof.
The one or more modules are stored in the memory 16 and when executed by the one or more processors 15 perform the thickness measuring method in any of the above-described method embodiments, e.g., the method steps of fig. 2 to 5 described above, to implement the functions of the modules and units in fig. 6 to 7.
The product can execute the method provided by the embodiment of the application, and has the corresponding functional modules and beneficial effects of the execution method. For technical details that are not described in detail in this embodiment, reference may be made to the methods provided in the embodiments of the present application.
Embodiments of the present application also provide a non-transitory computer-readable storage medium storing computer-executable instructions for execution by one or more processors, for example, to perform the method steps of fig. 2-5 described above to implement the functions of the modules in fig. 6-7.
Embodiments of the present application further provide a computer program product comprising a computer program stored on a non-volatile computer-readable storage medium, the computer program comprising program instructions that, when executed by a computer, cause the computer to perform a thickness measuring method in any of the above-described method embodiments, for example, to perform the method steps of fig. 2 to 5 described above, to implement the functions of the respective modules in fig. 6 to 7.
The embodiment of the invention provides a thickness measuring method, a device and a system, the method comprises the steps of firstly obtaining the current detection thickness of an object to be measured, then obtaining the thickness variation of a calibration object to obtain the temperature drift variation of the object to be measured, and finally compensating the current detection thickness according to the temperature drift variation to obtain the actual thickness of the object to be measured.
It should be noted that the above-described device embodiments are merely illustrative, where the units described as separate parts may or may not be physically separate, and the parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on multiple network units. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of the present embodiment.
Through the above description of the embodiments, those skilled in the art will clearly understand that each embodiment can be implemented by software plus a general hardware platform, and certainly can also be implemented by hardware. It will be understood by those skilled in the art that all or part of the processes of the methods of the embodiments described above can be implemented by hardware related to instructions of a computer program, which can be stored in a computer-readable storage medium, and when executed, can include the processes of the embodiments of the methods described above. The storage medium may be a magnetic disk, an optical disk, a Read-Only Memory (ROM), a Random Access Memory (RAM), or the like.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; within the idea of the invention, also technical features in the above embodiments or in different embodiments may be combined, steps may be implemented in any order, and there are many other variations of the different aspects of the invention as described above, which are not provided in detail for the sake of brevity; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (23)
1. A thickness measuring method is applied to a thickness measuring system, and comprises the following steps:
acquiring the current detection thickness of an object to be detected;
obtaining the thickness variation of a calibration object to obtain the temperature drift variation of the object to be measured;
and compensating the current detection thickness according to the temperature drift variation to obtain the actual thickness of the object to be detected.
2. The thickness measuring method according to claim 1,
the thickness measuring device comprises a first three-dimensional profile measuring instrument and a second three-dimensional profile measuring instrument which have opposite light emitting directions,
the obtaining of the current detection thickness of the object to be detected further includes:
acquiring first height data of a preset number of objects to be measured through the first three-dimensional profile measuring instrument;
acquiring second height data of a preset number of objects to be measured through the second three-dimensional profile measuring instrument;
and calculating to obtain the current detection thickness of the object to be detected according to the first height data and the second height data.
3. The thickness measuring method according to claim 2,
the calculating according to the first height data and the second height data to obtain the current detection thickness of the object to be detected further includes:
selecting N effective pixel points in the preset number of first height data and the second height data, wherein the pixel points from the nth pixel point to the (N + N) th pixel point are effective pixel points, and N and N are positive integers;
calculating the current detection thickness of the object to be detected according to the first height data and the second height data of the N effective pixel points, wherein the calculation formula is as follows:
wherein, T1Is the current detected thickness, Z, of the object to be measuredaIs said first height data, ZbFor the second height data, N1The number n of effective pixel points in the first height data or the second height data of the object to be detected1And the serial number of the first effective pixel point in the first height data or the second height data of the object to be detected is used as the serial number of the first effective pixel point in the first height data or the second height data of the object to be detected.
4. The thickness measuring method according to claim 2,
before the obtaining of the current detection thickness of the object to be detected, the method further includes:
judging whether the scanning light rays emitted by the first three-dimensional profile measuring instrument and the second three-dimensional profile measuring instrument can be completely overlapped during correlation;
if not, adjusting the position or the light emitting direction of the first three-dimensional profile measuring instrument or the second three-dimensional profile measuring instrument so as to enable the scanning light rays of the two three-dimensional profile measuring instruments to be completely overlapped when being oppositely emitted.
5. The thickness measuring method according to claim 2,
the number of the calibration objects is at least one, the calibration objects are arranged on two sides of the object to be measured, the thickness direction of the calibration objects is consistent with the thickness direction of the object to be measured when the calibration objects are placed,
the obtaining of the thickness variation of the calibration object to obtain the temperature drift variation of the object to be measured further includes:
respectively acquiring current average thickness data of the at least one calibration object;
acquiring standard thickness data of the calibration object;
and calculating the temperature drift variation of the object to be measured according to the current average thickness data and the standard thickness data.
6. The thickness measuring method according to claim 5,
the calibration objects comprise a first calibration object and a second calibration object,
the respectively obtaining the current average thickness data of the at least one calibration object further includes:
and respectively acquiring the current thickness data of the at least one calibration object through the first three-dimensional profile measuring instrument and the second three-dimensional profile measuring instrument so as to calculate and obtain the current average thickness data of the at least one calibration object.
7. The thickness measuring method according to claim 6,
the calculation formula of the current thickness data of the first calibration object is as follows:
wherein, T2Is the current thickness data, Z, of the first calibration objectcFirst height data, Z, of the first calibration object acquired by the first three-dimensional profile measuring instrumentdSecond height data, N, of the first calibration object acquired by the second three-dimensional profile measuring instrument2The number n of effective pixel points in the first height data or the second height data of the first calibration object2And the serial number of the first effective pixel point in the first height data or the second height data of the first calibration object is used as the serial number of the first effective pixel point.
8. The thickness measuring method according to claim 6,
the calculation formula of the current thickness data of the second calibration object is as follows:
wherein, T3Is the current thickness data, Z, of the second calibration objecteFirst height data, Z, of the second calibration object acquired by the first three-dimensional profile measuring instrumentfSecond height data, N, of the second calibration object acquired by the second three-dimensional profile measuring instrument3The number n of effective pixel points in the first height data or the second height data of the second calibration object3And the serial number of the first effective pixel point in the first height data or the second height data of the second calibration object is used as the serial number of the first effective pixel point in the second height data.
9. The thickness measuring method according to claim 7 or 8,
the calculation formula for obtaining the current average thickness data of the at least one calibration object by calculation is as follows:
wherein, T0Is the current average thickness data, T, of the at least one calibration object2Is the current thickness data, T, of the first calibration object3And the current thickness data of the second calibration object.
10. The thickness measuring method according to claim 9,
calculating to obtain a temperature drift variation according to the current average thickness data and the standard thickness data, and compensating the current detection thickness to obtain the actual thickness of the object to be detected, wherein the calculation formula is as follows:
11. A thickness measuring device is characterized by being applied to a thickness measuring system, and the device comprises:
the first acquisition module is used for acquiring the current detection thickness of the object to be detected;
the second acquisition module is used for acquiring the thickness variation of the calibration object so as to obtain the temperature drift variation of the object to be measured;
and the compensation module is used for compensating the current detection thickness according to the temperature drift variation so as to obtain the actual thickness of the object to be detected.
12. The thickness measuring apparatus according to claim 11,
the thickness measuring device comprises a first three-dimensional profile measuring instrument and a second three-dimensional profile measuring instrument which have opposite light emitting directions,
the first acquisition module is further used for acquiring a preset number of first height data of the object to be detected through the first three-dimensional profile measuring instrument, acquiring a preset number of second height data of the object to be detected through the second three-dimensional profile measuring instrument, and calculating to obtain the current detection thickness of the object to be detected according to the first height data and the second height data.
13. The thickness measuring apparatus according to claim 12,
the first obtaining module is further configured to select N effective pixels in the preset number of first height data and the second height data, where N and N are positive integers from the nth pixel to the N + nth pixel; calculating the current detection thickness of the object to be detected according to the first height data and the second height data of the N effective pixel points, wherein the calculation formula is as follows:
wherein, T1Is the current detected thickness, Z, of the object to be measuredaIs said first height data, ZbFor the second height data, N1The number n of effective pixel points in the first height data or the second height data of the object to be detected1And the serial number of the first effective pixel point in the first height data or the second height data of the object to be detected is used as the serial number of the first effective pixel point in the first height data or the second height data of the object to be detected.
14. The thickness measuring device according to claim 12, further comprising:
and the judging module is used for judging whether the scanning light rays emitted by the first three-dimensional profile measuring instrument and the second three-dimensional profile measuring instrument can be completely overlapped during the correlation, and if not, adjusting the position or the light emitting direction of the first three-dimensional profile measuring instrument or the second three-dimensional profile measuring instrument so as to ensure that the scanning light rays of the two three-dimensional profile measuring instruments are completely overlapped during the correlation.
15. The thickness measuring apparatus according to claim 12,
the number of the calibration objects is at least one, the calibration objects are arranged on two sides of the object to be measured, the thickness direction of the calibration objects is consistent with the thickness direction of the object to be measured when the calibration objects are placed,
the second obtaining module is further configured to obtain current average thickness data of the at least one calibration object, obtain standard thickness data of the calibration object, and calculate the temperature drift variation of the object to be measured according to the current average thickness data and the standard thickness data.
16. The thickness measuring apparatus according to claim 15,
the calibration objects comprise a first calibration object and a second calibration object,
the second obtaining module is further configured to obtain current thickness data of the at least one calibration object through the first three-dimensional profile measuring instrument and the second three-dimensional profile measuring instrument, so as to obtain current average thickness data of the at least one calibration object through calculation.
17. The thickness measuring apparatus according to claim 16,
the calculation formula of the current thickness data of the first calibration object is as follows:
wherein, T2Is the first calibration objectFront thickness data, ZcFirst height data, Z, of the first calibration object acquired by the first three-dimensional profile measuring instrumentdSecond height data, N, of the first calibration object acquired by the second three-dimensional profile measuring instrument2The number n of effective pixel points in the first height data or the second height data of the first calibration object2And the serial number of the first effective pixel point in the first height data or the second height data of the first calibration object is used as the serial number of the first effective pixel point.
18. The thickness measuring apparatus according to claim 16,
the calculation formula of the current thickness data of the second calibration object is as follows:
wherein, T3Is the current thickness data, Z, of the second calibration objecteFirst height data, Z, of the second calibration object acquired by the first three-dimensional profile measuring instrumentfSecond height data, N, of the second calibration object acquired by the second three-dimensional profile measuring instrument3The number n of effective pixel points in the first height data or the second height data of the second calibration object3And the serial number of the first effective pixel point in the first height data or the second height data of the second calibration object is used as the serial number of the first effective pixel point in the second height data.
19. The thickness measuring apparatus according to claim 17 or 18,
the calculation formula for obtaining the current average thickness data of the at least one calibration object by calculation is as follows:
wherein, T0Is the current average thickness data, T, of the at least one calibration object2Is the current thickness data, T, of the first calibration object3And the current thickness data of the second calibration object.
20. The thickness measuring device according to claim 19,
and calculating to obtain the temperature drift variation according to the current average thickness data and the standard thickness data, and compensating the current detection thickness to obtain the actual thickness of the object to be detected, wherein the calculation formula is as follows:
21. A thickness measuring system, comprising:
an object to be measured;
at least one calibration object;
the two three-dimensional profile measuring instruments are used for acquiring the thickness data of the object to be measured and the calibrated object;
at least one processor connected with the two three-dimensional profile measuring instruments; and
a memory coupled to the at least one processor; wherein,
the memory stores instructions executable by the at least one processor in connection with the two three-dimensional profilometers, the instructions being executable by the at least one processor in connection with the two three-dimensional profilometers to cause the at least one processor, in connection with the two three-dimensional profilometers, to perform the method of any one of claims 1-10.
22. The thickness measuring system of claim 21,
the at least one calibration object is fixed on one of the two three-dimensional profile measuring instruments and is arranged in the visual field range of the two three-dimensional profile measuring instruments.
23. A computer-readable storage medium having stored thereon computer-executable instructions for causing a computer to perform the method of any one of claims 1-10.
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CN116202428A (en) * | 2023-03-01 | 2023-06-02 | 钛玛科(北京)工业科技有限公司 | Laser measurement deviation correcting sensor and application thereof |
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CN114944032A (en) * | 2022-05-30 | 2022-08-26 | 中国银行股份有限公司 | Bank cash counting method and system, electronic equipment and storage medium |
CN116202428A (en) * | 2023-03-01 | 2023-06-02 | 钛玛科(北京)工业科技有限公司 | Laser measurement deviation correcting sensor and application thereof |
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