JP2003188076A - Electron beam drawer and correcting method for sample position - Google Patents
Electron beam drawer and correcting method for sample positionInfo
- Publication number
- JP2003188076A JP2003188076A JP2001385915A JP2001385915A JP2003188076A JP 2003188076 A JP2003188076 A JP 2003188076A JP 2001385915 A JP2001385915 A JP 2001385915A JP 2001385915 A JP2001385915 A JP 2001385915A JP 2003188076 A JP2003188076 A JP 2003188076A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- electron beam
- holder
- temperature
- position detection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Electron Beam Exposure (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は電子ビーム描画装置
に係り、特に試料保持手段の補正方式に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron beam drawing apparatus, and more particularly to a correction method for sample holding means.
【０００２】[0002]
【従来の技術】従来の電子ビーム描画装置は、半導体の
製造や薄膜磁気ヘッドを製造するリソグラフィ工程で形
成される回路パターンが年々高集積化され、それに伴う
微細化の要求に応えて様々な装置が提案されている。2. Description of the Related Art A conventional electron beam drawing apparatus has various circuit patterns formed in a lithography process for manufacturing a semiconductor or a thin film magnetic head, which is highly integrated year by year, and various devices are required to meet the demand for miniaturization. Is proposed.
【０００３】描画面の歪みに起因する焦点ずれ、描画位
置ずれ、回転などによる回路パターンの歪みを無くすこ
と、もしくはそのずれ量を補正し回路パターンの歪みを
なくすことが要求されている。たとえば、特開昭６１−
２７９８５６号では、試料に位置検出用マークを備え、
描画の際の熱膨張による試料の変形量を検出し、補正を
行なっている。It is required to eliminate the distortion of the circuit pattern due to the focus deviation, the drawing position deviation, the rotation, etc. due to the distortion of the drawing surface, or to correct the deviation amount to eliminate the distortion of the circuit pattern. For example, Japanese Patent Laid-Open No. 61-
In 279856, the sample is equipped with a position detection mark,
The amount of deformation of the sample due to thermal expansion during drawing is detected and corrected.
【０００４】[0004]
【発明が解決しようとする課題】上記従来技術では、試
料に直接、位置検出用マークを備えるため試料への描画
領域が制限される。更に、位置検出用マークの検出に際
し、本マーク周辺も描画されることにより、半導体のチ
ップサイズの狭域化およびチップ取得数の減少等、生産
性に欠ける。また、熱膨張による変形は試料を含めた試
料保持装置を描画ステージ上に待機させ、試料の温度が
安定するまで待つ対策が可能であるが、温度が安定する
までに数時間を要するので、描画装置の稼働率が低下す
る。In the above prior art, since the sample is directly provided with the position detecting mark, the drawing area on the sample is limited. Furthermore, when the position detection mark is detected, the area around the main mark is also drawn, resulting in a lack of productivity such as narrowing the semiconductor chip size and reducing the number of chips to be acquired. For deformation due to thermal expansion, it is possible to make the sample holding device including the sample stand by on the drawing stage and wait until the temperature of the sample stabilizes, but it takes several hours until the temperature stabilizes. The operation rate of the equipment is reduced.
【０００５】本発明の目的は、上記従来技術の問題点に
鑑み、試料に直接、位置検出用マークを備えることな
く、試料やステージの変形や変動を検出し、描画位置を
補正することで描画精度を向上する電子ビーム描画装置
及び試料位置の補正方法を提供することにある。In view of the above-mentioned problems of the prior art, an object of the present invention is to detect a deformation or fluctuation of a sample or a stage directly without providing a position detection mark on the sample and correct the drawing position for drawing. An object of the present invention is to provide an electron beam drawing apparatus and a method for correcting the position of a sample that improve accuracy.
【０００６】[0006]
【課題を解決するための手段】上記目的を達成する本発
明は、電子銃と電子ビームを収束する電子レンズと、電
子線を偏向する偏向器と、試料を載置するホルダーと、
前記ホルダーを保持するステージと、前記ステージを移
動する駆動機構を具備する電子線描画装置において、前
記ホルダー上で前記試料を弾性的に保持し、かつ位置検
出用マークをもつ複数の支持部材と、前記位置検出用マ
ーク間の相対変位を検出して描画位置を補正する補正手
段を設けたことを特徴とする。Means for Solving the Problems The present invention for achieving the above object comprises an electron gun, an electron lens for converging an electron beam, a deflector for deflecting an electron beam, and a holder for mounting a sample.
In an electron beam drawing apparatus including a stage holding the holder, and a drive mechanism for moving the stage, a plurality of support members that elastically hold the sample on the holder and have a position detection mark, It is characterized in that correction means for detecting the relative displacement between the position detection marks and correcting the drawing position is provided.
【０００７】前記支持部材は、前記ホルダーにバネで保
持され、前記試料との接触部の近傍に前記位置検出用マ
ークを設けている。The support member is held by the holder by a spring, and the position detection mark is provided near the contact portion with the sample.
【０００８】また、前記接触部に前記試料の温度を検出
する温度検出部を設け、かつ前記補正手段に前記温度検
出部の温度変動を検出して描画位置を補正する機能を設
けている。Further, the contact section is provided with a temperature detecting section for detecting the temperature of the sample, and the correcting means is provided with a function of detecting a temperature variation of the temperature detecting section and correcting the drawing position.
【０００９】本発明の試料位置の補正方法は、前記試料
との接触点に設けられ、自己位置の変動が可能な複数の
位置検出用マークのマーク間距離を検出し、該マーク間
距離から応力変形量を計算して前記試料位置の変動を求
めることを特徴とする。The sample position correcting method of the present invention detects a mark-to-mark distance between a plurality of position-detecting marks which are provided at a contact point with the sample and whose position can be changed, and stress is detected from the mark-to-mark distance. It is characterized in that the variation of the sample position is obtained by calculating the amount of deformation.
【００１０】さらに、前記試料の温度の測定を行い、そ
の温度差から試料の熱変形量を計算して前記試料位置の
変動を求めることを特徴とする。Further, it is characterized in that the temperature of the sample is measured and the amount of thermal deformation of the sample is calculated from the temperature difference to obtain the variation of the sample position.
【００１１】なお、描画位置の補正は、前記相対変位及
び前記温度変動の両方の変動パターンに対応する補正量
を予め求めておき、検出された変化に最も類似している
パターンの補正量によって補正するようにしてもよい。In the correction of the drawing position, the correction amounts corresponding to the fluctuation patterns of both the relative displacement and the temperature fluctuation are obtained in advance, and the correction amount of the pattern most similar to the detected change is corrected. You may do it.
【００１２】本発明によれば、前記位置検出用マーク間
の相対変化、更には温度変化を検出することで、間接的
に試料の変形および回転を検出し、その補正を施すこと
により、試料の変形や回転による描画精度の低下を回避
することができる。According to the present invention, the relative change between the position detection marks, and further the temperature change are detected to indirectly detect the deformation and rotation of the sample, and to perform the correction to detect the sample. It is possible to avoid deterioration of drawing accuracy due to deformation and rotation.
【００１３】[0013]
【発明の実施の形態】本発明の実施形態について図面を
用いて説明する。図１は本発明による電子線描画装置の
一実施例を示す。電子銃３１より発せられた電子線３２
が絞り３３と成形偏向器３４により矩形に成形され、電
子レンズ３５と偏向器３６によって試料（基板）１２上
の任意の位置に結像し、回路パターンを試料１２上に形
成する。試料１２はホルダー１１に保持され、ホルダ１
１はＸＹステージ１４上に固定されている。これによ
り、偏向器３６による電子線の偏向量が数ｍｍ程度で
も、ＸＹステージ１４により試料１２の移動が可能とな
り、試料全面にパターンを描画できる。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described with reference to the drawings. FIG. 1 shows an embodiment of an electron beam drawing apparatus according to the present invention. Electron beam 32 emitted from electron gun 31
Is formed into a rectangular shape by the diaphragm 33 and the shaping deflector 34, and an image is formed at an arbitrary position on the sample (substrate) 12 by the electron lens 35 and the deflector 36 to form a circuit pattern on the sample 12. The sample 12 is held by the holder 11, and the holder 1
1 is fixed on the XY stage 14. As a result, even if the deflection amount of the electron beam by the deflector 36 is about several mm, the sample 12 can be moved by the XY stage 14, and a pattern can be drawn on the entire surface of the sample.
【００１４】本電子線描画装置では、試料位置を検出す
るためマーク位置を取り込む測長装置１０１、試料の温
度を検出する測温装置１０２、これら検出データを入力
し、偏向器３６（更にはＸＹステージ１４）に補正され
た描画位置を出力する補正演算機１０３、測長パターン
や測温パターンと偏向器３６の補正データを予め格納し
てあるデータベース１０４を有している。補正演算機１
０３はデータベース１０４を参照し、検出データに最も
近いパターンの補正データを求めて偏向器３６（更には
ＸＹステージ３９）を制御し、偏向器３６は試料位置の
変形分を補正して描画する。In the present electron beam drawing apparatus, a length measuring device 101 for taking in a mark position for detecting the sample position, a temperature measuring device 102 for detecting the temperature of the sample, these detection data are inputted, and a deflector 36 (further, XY) is inputted. The stage 14) has a correction calculator 103 for outputting the corrected drawing position, and a database 104 in which the length measurement pattern, the temperature measurement pattern and the correction data of the deflector 36 are stored in advance. Correction calculator 1
Reference numeral 03 refers to the database 104, obtains correction data of a pattern closest to the detection data, and controls the deflector 36 (further, the XY stage 39). The deflector 36 corrects the deformation of the sample position and draws.
【００１５】図２に試料保持装置の構成を示す。ステー
ジ１４上にホルダ１１が固定されている。ホルダ１１に
は基板１２を支持するため、少なくとも２つ以上の支持
ピン１３をホルダ１１上に配置している。FIG. 2 shows the structure of the sample holding device. The holder 11 is fixed on the stage 14. At least two or more support pins 13 are arranged on the holder 11 to support the substrate 12 on the holder 11.
【００１６】図３に支持ピン１３の構成を示す。ホルダ
１１上の支持ピン１３は基板１２の側面を押し付けるバ
ネ要素２１を有し、機械的に基板１２を保持する。支持
ピン１３は位置検出用マーク２２を有し、基板１２の変
形および回転を検出できるようにしている。位置検出用
マーク２２は複数設けることで、基板１２の局所的な変
形をより正確に検出できる。FIG. 3 shows the structure of the support pin 13. The support pin 13 on the holder 11 has a spring element 21 that presses the side surface of the substrate 12 and mechanically holds the substrate 12. The support pin 13 has a position detection mark 22 so that the deformation and rotation of the substrate 12 can be detected. By providing a plurality of position detection marks 22, local deformation of the substrate 12 can be detected more accurately.
【００１７】支持ピン１３は、たとえば支持ピン１３ａ
のように基板１２の頂点に配置することで、変形や回転
の変位量がもっとも大きくなり、より正確な相対位置の
変化を検出できるので好ましい。しかし、基板１２の鋭
角位置に配置することによって、支持位置のずれを防止
する必要があり、図４に示すように基板１２の外形に沿
った鋭角対応接触子４１の形状にし、支持位置のずれを
防止する。The support pin 13 is, for example, a support pin 13a.
By arranging at the apex of the substrate 12 as described above, the amount of deformation or rotation is maximized, and more accurate change in relative position can be detected, which is preferable. However, it is necessary to prevent the displacement of the supporting position by arranging it at the acute angle position of the substrate 12. Therefore, as shown in FIG. Prevent.
【００１８】本実施例は、支持ピン１３ｂ、１３ｃ、１
３ｄ、１３ｅのように頂点ではなく、容易に支持できる
位置に配置している。また、支持ピン１３はすべてをバ
ネ要素をもつ可動部にする必要は無く、可動支持ピンの
配置された反対側は固定支持ピンにしても、同様な効果
が得られる。In this embodiment, the support pins 13b, 13c, 1
It is arranged at a position where it can be easily supported, not at the apex like 3d and 13e. Further, it is not necessary for all the support pins 13 to be movable parts having spring elements, and the same effect can be obtained even if the opposite side where the movable support pins are arranged is fixed support pins.
【００１９】次に、支持ピンの構成について説明する。
支持ピン１３はホルダ１１にバネ要素２１が配置され、
接触子２３を介し基板１２を支持する。支持ピン１３上
の位置検出用マーク２２は、バネ要素２１より基板１２
側に配置された接触子２３上に配置することで、バネ要
素２１の伸びによる影響をなくすことができる。Next, the structure of the support pin will be described.
In the support pin 13, the spring element 21 is arranged in the holder 11,
The substrate 12 is supported via the contacts 23. The position detection mark 22 on the support pin 13 is provided on the substrate 12 by the spring element 21.
By arranging it on the contactor 23 arranged on the side, it is possible to eliminate the influence of the elongation of the spring element 21.
【００２０】真空中においては、熱伝導は接触部を介し
た伝導と輻射による熱伝達が考えられるが、電子線描画
装置の描画部では輻射の影響が生じるほどの高温部はな
く、すべてが熱伝導と考えられる。したがって、基板１
２に接触している接触子２３を熱電対等の温度測定手段
で構成すること、もしくは図３に示すように接触子２３
に温度測定手段２４を内蔵させることによって、基板１
２の正確な温度測定が可能となる。温度測定手段２４に
は熱電対などが用いられる。In a vacuum, heat conduction can be considered to be conduction through a contact portion and heat transfer by radiation. However, in the drawing portion of an electron beam drawing apparatus, there is no high-temperature portion that is affected by radiation, and all the heat is generated. Considered to be conduction. Therefore, the substrate 1
2 may be constituted by a temperature measuring means such as a thermocouple, or as shown in FIG.
By incorporating the temperature measuring means 24 in the substrate 1,
Two accurate temperature measurements are possible. A thermocouple or the like is used as the temperature measuring means 24.
【００２１】次に補正方法について説明する。図５は一
実施例による試料位置補正方法の手順を示すフローチャ
ートである。補正計算機１０３は、はじめに位置検出用
マーク２２の一つを原点としておき、原点の位置および
原点から残りの位置検出用マーク２２の相対位置を検出
し（５０１）、マーク間距離の変動の有無を判定する
（５０２）。マーク間距離に変化が無ければ、基板１２
には変形が生じていないので、補正無しのまま描画する
（５０３）。Next, the correction method will be described. FIG. 5 is a flowchart showing the procedure of the sample position correcting method according to the embodiment. The correction computer 103 first sets one of the position detection marks 22 as the origin, detects the position of the origin and the relative position of the remaining position detection marks 22 from the origin (501), and determines whether there is a change in the inter-mark distance. A determination is made (502). If there is no change in the distance between marks, the substrate 12
Since no deformation has occurred in the image, the image is drawn without correction (503).
【００２２】マーク間距離に変化が生じている場合は、
次に温度変動の有無を判定する（５０４）。温度の測定
はマーク検出時に行う。温度変化が生じている場合、基
板１２は熱変形を生じているので、基板１２の固有熱膨
張率に基づいて温度差から熱膨張量を計算し、熱変形の
補正量を求める（５０５）。なお、温度変化のない場合
はステップ５０５はスキップされる。When the distance between marks changes,
Next, the presence or absence of temperature fluctuation is determined (504). The temperature is measured when the mark is detected. If the temperature has changed, the substrate 12 has undergone thermal deformation. Therefore, the thermal expansion amount is calculated from the temperature difference based on the intrinsic thermal expansion coefficient of the substrate 12, and the correction amount for thermal deformation is obtained (505). If there is no temperature change, step 505 is skipped.
【００２３】次に、ステージ移動による試料のシフトの
有無を判定する（５０６）。シフトが生じている場合に
は、試料のスリップによる平行移動と回転が生じている
ので、原点の位置として図２のステージ上マーク１５を
用い、個々の位置検出用マーク２２との位置関係に基づ
いてスリップ量を算出する（５０７）。Next, it is determined whether or not the sample is shifted due to the movement of the stage (506). When the shift occurs, parallel movement and rotation occur due to the slip of the sample. Therefore, the on-stage mark 15 of FIG. 2 is used as the position of the origin and based on the positional relationship with the individual position detection marks 22. Then, the slip amount is calculated (507).
【００２４】次に、個々の位置検出用マーク２２間の距
離の変化を補正するための補正量を求める（５０８）。
この変形は支持ピンなどの外力による応力変形であり、
個々の位置検出用マーク２２間の距離の変化を測定する
ことによって、どのような応力が働いているか知ること
ができ、これにより応力による変形の補正量を計算する
ことができるので、補正して描画する（５０９）。Next, a correction amount for correcting the change in the distance between the individual position detection marks 22 is obtained (508).
This deformation is a stress deformation due to an external force such as a support pin,
By measuring the change in the distance between the individual position detection marks 22, it is possible to know what kind of stress is acting, and the correction amount of the deformation due to stress can be calculated from this, so Draw (509).
【００２５】なお、補正量はシミュレーション等の計算
によってマーク間距離の測定後に随時求めることも可能
である。しかし、電子線描画装置の処理速度は速く、前
述の方法では描画中に補正量を求めることが難しい。そ
こで、あらかじめ測定された距離の変化から補正量を求
めておき、補正量のデータベース１０４を構築しておく
ことで、測定された距離変化から即座に補正量を求める
ことが可能になる。なお、温度変化についても同様にし
て補正量のデータベース１０４を構築しておくことがで
きる。The correction amount can be obtained at any time after the distance between marks is measured by calculation such as simulation. However, the processing speed of the electron beam drawing apparatus is high, and it is difficult to obtain the correction amount during drawing by the above method. Therefore, by obtaining the correction amount from the change in the distance measured in advance and constructing the correction amount database 104, the correction amount can be immediately obtained from the change in the measured distance. The correction amount database 104 can be similarly constructed for the temperature change.
【００２６】以上の方法によって、各々の補正量を求
め、描画の際にこれらを合成して補正することにより、
変形による影響を受けない正確な描画が可能になる。By the above method, each correction amount is obtained, and these are combined and corrected at the time of drawing,
Accurate drawing is possible without being affected by deformation.
【００２７】位置検出用マーク２２で試料の変形や回転
の補正をかける際の基準(原点)は、位置検出用マーク２
２の一つを原点とし、原点から残りの位置検出用マーク
２２の相対変位を検出して補正量を求めている。しか
し、ホルダ１１上に基準となる位置検出用マークを配置
したり、ステージ１４上に位置検出用マーク１５を設け
ても、基板１２の変形の補正に対する同様な効果が得ら
れる。The reference (origin) when correcting the deformation and rotation of the sample with the position detection mark 22 is the position detection mark 2
One of the two is set as the origin, and the relative displacement of the remaining position detection marks 22 is detected from the origin to obtain the correction amount. However, even if the reference position detection mark is arranged on the holder 11 or the position detection mark 15 is provided on the stage 14, the same effect for correcting the deformation of the substrate 12 can be obtained.
【００２８】位置検出用マーク２２の検出回数は多いほ
ど正確な変化が測定できるが、ステージから伝達する熱
によるホルダ１１の温度変化および基板１２の変形の時
定数を考えれば、描画パターン毎に行うのがよい。これ
により、検出回数を減らし生産能率をあげることが可能
である。The more the number of times the position detecting mark 22 is detected, the more accurately the change can be measured. However, considering the time constant of the temperature change of the holder 11 and the deformation of the substrate 12 due to the heat transmitted from the stage, the change is performed for each drawing pattern. Is good. As a result, it is possible to reduce the number of detections and increase the production efficiency.
【００２９】[0029]
【発明の効果】本発明によれば、試料およびホルダの変
形を検出し、描画位置の補正を行うことができるので、
精度の高い描画を得る効果がある。According to the present invention, since the deformation of the sample and the holder can be detected and the drawing position can be corrected,
This has the effect of obtaining highly accurate drawing.
【００３０】さらに、試料支持部に温度測定手段を介す
ことにより、温度変形による補正も行える効果がある。Further, by providing a temperature measuring means in the sample supporting portion, there is an effect that correction due to temperature deformation can be performed.
【図１】本発明の電子線描画装置を示す一実施例の構成
図。FIG. 1 is a configuration diagram of an embodiment showing an electron beam drawing apparatus of the present invention.
【図２】保持装置の平面図。FIG. 2 is a plan view of a holding device.
【図３】試料保持部分の断面図。FIG. 3 is a sectional view of a sample holding portion.
【図４】試料保持部分の平面図。FIG. 4 is a plan view of a sample holding portion.
【図５】補正方法を示すフローチャート。FIG. 5 is a flowchart showing a correction method.
１１…ホルダー、１２…基板、１３…支持ピン、１４…
ステージ、２１…バネ要素、２２…位置検出用マーク、
２３…接触子、２４…温度測定手段、３１…電子銃、３
２…電子線、３３…絞り、３４…成形偏光器、３５…電
子レンズ、３６…偏向器、４１…鋭角対応接触子。11 ... Holder, 12 ... Substrate, 13 ... Support pin, 14 ...
Stage, 21 ... Spring element, 22 ... Position detection mark,
23 ... Contactor, 24 ... Temperature measuring means, 31 ... Electron gun, 3
2 ... Electron beam, 33 ... Aperture, 34 ... Molded polarizer, 35 ... Electron lens, 36 ... Deflector, 41 ... Contactor for acute angle.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０１Ｌ 21/30 ５４１Ｌ (72)発明者 小貫 勝則 茨城県ひたちなか市大字市毛882番地 株 式会社日立ハイテクノロジーズ設計・製造 統括本部那珂事業所内 (72)発明者 福嶋 芳雅 茨城県ひたちなか市大字市毛882番地 株 式会社日立ハイテクノロジーズ設計・製造 統括本部那珂事業所内 (72)発明者 角田 正弘 茨城県ひたちなか市大字市毛882番地 株 式会社日立ハイテクノロジーズ設計・製造 統括本部那珂事業所内 Ｆターム(参考） 2H097 AA03 BA02 CA16 DB20 KA28 LA10 5C001 AA01 AA08 CC06 DD02 5C034 BB06 BB07 5F056 CC01 CC03 CC05 CC16 EA14 EA15 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 7 Identification code FI theme code (reference) H01L 21/30 541L (72) Inventor Katsunori Onuki 882 Ichige, Hitachinaka City, Ibaraki Prefecture Hitachi High-Technologies Corporation Design and Manufacturing Headquarters Naka Plant (72) Inventor Yoshimasa Fukushima 882 Ichima, Hitachinaka City, Ibaraki Prefecture 882 Ichige, Hitachi High-Technologies Corporation Headquarters Design and Manufacturing Headquarters (72) Masahiro Tsunoda Hitachinaka City, Ibaraki Prefecture 882 Ichige Incorporated company Hitachi High-Technologies Corporation Design / Manufacturing Headquarters Naka Plant F Term (reference) 2H097 AA03 BA02 CA16 DB20 KA28 LA10 5C001 AA01 AA08 CC06 DD02 5C034 BB06 BB07 5F056 CC01 CC03 CC05 CC16 EA14 EA15
Claims (5)
ズと、電子線を偏向する偏向器と、試料を載置するホル
ダーと、前記ホルダーを保持するステージと、前記ステ
ージを移動する駆動機構を具備する電子線描画装置にお
いて、 前記ホルダーに前記試料を弾性的に支持し、かつ位置検
出用マークをもつ複数の支持部材と、前記位置検出用マ
ーク間の相対変位を検出して描画位置を補正する補正手
段を設けたことを特徴とする電子線描画装置。1. An electron gun, an electron lens for converging an electron beam, a deflector for deflecting an electron beam, a holder for mounting a sample, a stage for holding the holder, and a drive mechanism for moving the stage. In an electron beam drawing apparatus provided, the drawing position is corrected by detecting relative displacement between a plurality of support members that elastically support the sample on the holder and have position detection marks, and the position detection marks. An electron beam drawing apparatus, characterized in that a correction means is provided.
前記試料との接触部の近傍に前記位置検出用マークを設
けたことを特徴とする電子線描画装置。2. The support member according to claim 1, wherein the support member is held by the holder by a spring,
An electron beam drawing apparatus, wherein the position detection mark is provided in the vicinity of a contact portion with the sample.
け、かつ前記補正手段に前記温度検出部の温度変動を検
出して描画位置を補正する機能を設けたことを特徴とす
る電子線描画装置。3. The function according to claim 2, wherein the contact section is provided with a temperature detecting section for detecting the temperature of the sample, and the correcting means detects a temperature variation of the temperature detecting section to correct the drawing position. An electron beam drawing apparatus characterized by being provided.
上に描画する際に、試料位置の変動に応じて描画位置を
補正する試料位置の補正方法において、 前記試料との接触点に設けられ、自己位置の変動が可能
な複数の位置検出用マークのマーク間距離を検出し、該
マーク間距離から応力変形量を計算して前記試料位置の
変動を求めることを特徴とする試料位置の補正方法。4. A sample position correcting method for correcting a drawing position according to a change in the sample position when an electron beam of an electron beam drawing apparatus is deflected to draw on the sample, wherein a contact point with the sample is set. A sample position which is provided and detects the inter-mark distance of a plurality of position detecting marks capable of changing its own position, and calculates the amount of stress deformation from the inter-mark distance to obtain the change of the sample position. Correction method.
変形量を計算して前記試料位置の変動を求めることを特
徴とする試料位置の補正方法。5. The method for correcting the sample position according to claim 4, wherein the temperature of the sample is measured, and the amount of thermal deformation of the sample is calculated from the temperature difference to obtain the variation of the sample position.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001385915A JP3569255B2 (en) | 2001-12-19 | 2001-12-19 | Electron beam writing apparatus and sample position correction method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001385915A JP3569255B2 (en) | 2001-12-19 | 2001-12-19 | Electron beam writing apparatus and sample position correction method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003188076A true JP2003188076A (en) | 2003-07-04 |
| JP3569255B2 JP3569255B2 (en) | 2004-09-22 |
Family
ID=27595202
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001385915A Expired - Fee Related JP3569255B2 (en) | 2001-12-19 | 2001-12-19 | Electron beam writing apparatus and sample position correction method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3569255B2 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003530711A (en) * | 2000-04-11 | 2003-10-14 | エテック システムズ インコーポレイテッド | Method and apparatus for correcting resist heating in real time in lithography |
| JP2006135260A (en) * | 2004-11-09 | 2006-05-25 | Toshiba Corp | Electron beam lithography apparatus, deflection amplifier, electron beam lithography method, manufacturing method of semiconductor device and electron beam lithography program |
| JP2007218712A (en) * | 2006-02-16 | 2007-08-30 | Mitsutoyo Corp | Shift quantity estimation mechanism, sample measuring instrument and material tester |
| JP2009297753A (en) * | 2008-06-13 | 2009-12-24 | Kawasaki Heavy Ind Ltd | Piercing method using provisional tack |
| KR101528342B1 (en) * | 2012-12-06 | 2015-06-10 | 가부시키가이샤 어드밴티스트 | Correction apparatus, probe apparatus and test apparatus |
| CN104992919A (en) * | 2015-07-21 | 2015-10-21 | 合肥鑫晟光电科技有限公司 | Positioning foot, positioning device and positioning method |
| JP2019201111A (en) * | 2018-05-16 | 2019-11-21 | 株式会社ニューフレアテクノロジー | Charged particle beam lithography apparatus and charged particle beam lithography method |
-
2001
- 2001-12-19 JP JP2001385915A patent/JP3569255B2/en not_active Expired - Fee Related
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003530711A (en) * | 2000-04-11 | 2003-10-14 | エテック システムズ インコーポレイテッド | Method and apparatus for correcting resist heating in real time in lithography |
| JP2006135260A (en) * | 2004-11-09 | 2006-05-25 | Toshiba Corp | Electron beam lithography apparatus, deflection amplifier, electron beam lithography method, manufacturing method of semiconductor device and electron beam lithography program |
| JP4557682B2 (en) * | 2004-11-09 | 2010-10-06 | 株式会社東芝 | Electron beam drawing apparatus, deflection amplifier, and electron beam drawing method |
| US7985958B2 (en) | 2004-11-09 | 2011-07-26 | Kabushiki Kaisha Toshiba | Electron beam drawing apparatus, deflection amplifier, deflection control device, electron beam drawing method, method of manufacturing semiconductor device, and electron beam drawing program |
| JP2007218712A (en) * | 2006-02-16 | 2007-08-30 | Mitsutoyo Corp | Shift quantity estimation mechanism, sample measuring instrument and material tester |
| JP2009297753A (en) * | 2008-06-13 | 2009-12-24 | Kawasaki Heavy Ind Ltd | Piercing method using provisional tack |
| KR101528342B1 (en) * | 2012-12-06 | 2015-06-10 | 가부시키가이샤 어드밴티스트 | Correction apparatus, probe apparatus and test apparatus |
| CN104992919A (en) * | 2015-07-21 | 2015-10-21 | 合肥鑫晟光电科技有限公司 | Positioning foot, positioning device and positioning method |
| US9963297B2 (en) | 2015-07-21 | 2018-05-08 | Boe Technology Group Co., Ltd. | Positioning foot, positioning device and position correction method |
| JP2019201111A (en) * | 2018-05-16 | 2019-11-21 | 株式会社ニューフレアテクノロジー | Charged particle beam lithography apparatus and charged particle beam lithography method |
| US10699877B2 (en) | 2018-05-16 | 2020-06-30 | Nuflare Technology, Inc. | Charged-particle beam writing apparatus and charged-particle beam writing method |
| JP7034825B2 (en) | 2018-05-16 | 2022-03-14 | 株式会社ニューフレアテクノロジー | Charged particle beam drawing device and charged particle beam drawing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3569255B2 (en) | 2004-09-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6552329B2 (en) | Imprint apparatus, imprint system, and article manufacturing method | |
| CN104199257B (en) | The measurement of a kind of precisely locating platform absolute fix precision and compensation method | |
| US9639008B2 (en) | Lithography apparatus, and article manufacturing method | |
| EP3379333B1 (en) | Detection apparatus, pattern forming apparatus, obtaining method, detection method, and article manufacturing method | |
| US20070133864A1 (en) | Apparatus and method for measuring at least one of arrangement and shape of shots on substrate, exposure apparatus, and device manufacturing method | |
| US20240027365A1 (en) | Detection apparatus, detection method, exposure apparatus, exposure system, and article manufacturing method | |
| US7737567B2 (en) | Method and apparatus for wafer marking | |
| JP2003188076A (en) | Electron beam drawer and correcting method for sample position | |
| JP4531685B2 (en) | Shape measuring device and shape measuring method | |
| JPWO2015025674A1 (en) | Process substrate with crystal orientation mark, crystal orientation detection method, and crystal orientation mark readout device | |
| JP2001127144A (en) | Method and device for holding substrate with suction and exposing device and device manufacturing method using the device | |
| CN102902167A (en) | Method for detecting accuracy of mask plate hood of photoetching machine | |
| JP6591916B2 (en) | Mask manufacturing equipment | |
| JP2008192861A (en) | Semiconductor inspection apparatus and method | |
| CN110783224B (en) | Assembling component carriers using offset information between structural features formed on opposite sides of a reference component | |
| JP2015002260A (en) | Lithography apparatus, lithography method, and method of manufacturing article using them | |
| JP3168590B2 (en) | Reduction projection exposure method | |
| JP2000340620A (en) | Probe device | |
| JP6792342B2 (en) | Lithography equipment and its control method, and manufacturing method of articles | |
| JP2008117968A (en) | Prober | |
| JP2868548B2 (en) | Alignment device | |
| CN109426098A (en) | Patterning method, lithographic equipment and article manufacturing method | |
| JP2906094B2 (en) | Probe device | |
| JPH1154418A (en) | Method and device for correcting signal waveform | |
| US11262401B2 (en) | Wafer probe station |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20040330 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20040521 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20040615 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20040617 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080625 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090625 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100625 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110625 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110625 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120625 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120625 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130625 Year of fee payment: 9 |
|
| LAPS | Cancellation because of no payment of annual fees |