CN102844846A - 一种太阳能电池及太阳能电池的制造方法、以及太阳能电池的制造装置 - Google Patents
一种太阳能电池及太阳能电池的制造方法、以及太阳能电池的制造装置 Download PDFInfo
- Publication number
- CN102844846A CN102844846A CN2010800637908A CN201080063790A CN102844846A CN 102844846 A CN102844846 A CN 102844846A CN 2010800637908 A CN2010800637908 A CN 2010800637908A CN 201080063790 A CN201080063790 A CN 201080063790A CN 102844846 A CN102844846 A CN 102844846A
- Authority
- CN
- China
- Prior art keywords
- solar cell
- nitric acid
- film
- semiconductor
- dielectric film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 43
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 82
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 80
- 239000004065 semiconductor Substances 0.000 claims abstract description 51
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 68
- 229910052710 silicon Inorganic materials 0.000 claims description 57
- 239000010703 silicon Substances 0.000 claims description 56
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 53
- 238000007254 oxidation reaction Methods 0.000 claims description 23
- 230000003647 oxidation Effects 0.000 claims description 22
- 238000013459 approach Methods 0.000 claims description 18
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 17
- 238000009835 boiling Methods 0.000 claims description 15
- 238000009434 installation Methods 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 14
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 13
- 229920005591 polysilicon Polymers 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 15
- 230000006798 recombination Effects 0.000 abstract description 4
- 238000005215 recombination Methods 0.000 abstract description 4
- 230000000415 inactivating effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 181
- 239000000758 substrate Substances 0.000 description 87
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 60
- 239000000243 solution Substances 0.000 description 25
- 238000000034 method Methods 0.000 description 18
- 239000011521 glass Substances 0.000 description 13
- 239000010409 thin film Substances 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 10
- 239000010410 layer Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 9
- 239000000377 silicon dioxide Substances 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 238000009413 insulation Methods 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 230000015654 memory Effects 0.000 description 4
- 239000011259 mixed solution Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 235000014347 soups Nutrition 0.000 description 2
- 238000006424 Flood reaction Methods 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910002808 Si–O–Si Inorganic materials 0.000 description 1
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006701 autoxidation reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- XTEGARKTQYYJKE-UHFFFAOYSA-N chloric acid Chemical compound OCl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-N 0.000 description 1
- 229940005991 chloric acid Drugs 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000010571 fourier transform-infrared absorption spectrum Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229960002050 hydrofluoric acid Drugs 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- NICDRCVJGXLKSF-UHFFFAOYSA-N nitric acid;trihydrochloride Chemical compound Cl.Cl.Cl.O[N+]([O-])=O NICDRCVJGXLKSF-UHFFFAOYSA-N 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000012958 reprocessing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Formation Of Insulating Films (AREA)
- Photovoltaic Devices (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (16)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010030776 | 2010-02-16 | ||
JP2010-030776 | 2010-02-16 | ||
PCT/JP2010/062788 WO2011102009A1 (ja) | 2010-02-16 | 2010-07-29 | 太陽電池およびその製造方法、並びに太陽電池の製造装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102844846A true CN102844846A (zh) | 2012-12-26 |
CN102844846B CN102844846B (zh) | 2015-07-01 |
Family
ID=44482624
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201080063790.8A Expired - Fee Related CN102844846B (zh) | 2010-02-16 | 2010-07-29 | 一种太阳能电池及太阳能电池的制造方法、以及太阳能电池的制造装置 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP5666552B2 (zh) |
CN (1) | CN102844846B (zh) |
WO (1) | WO2011102009A1 (zh) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08298332A (ja) * | 1995-04-26 | 1996-11-12 | Sanyo Electric Co Ltd | 光起電力装置の製造方法 |
US20050215070A1 (en) * | 2002-05-24 | 2005-09-29 | Hikaru Kobayashi | Method for forming silicon dioxide film on silicon substrate, method for forming oxide film on semiconductor substrate, and method for producing semiconductor device |
CN101122047A (zh) * | 2007-09-14 | 2008-02-13 | 李绍光 | 一种太阳能电池用多晶硅制造方法 |
JP2008066317A (ja) * | 2006-08-08 | 2008-03-21 | Osaka Univ | 絶縁膜形成方法、絶縁膜形成装置、半導体装置の製造方法、および半導体装置並びにシリコンカーバイドの基板の表面処理方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04226084A (ja) * | 1990-05-23 | 1992-08-14 | Mitsubishi Electric Corp | 太陽電池およびその製造方法 |
JPH08195494A (ja) * | 1994-05-26 | 1996-07-30 | Sanyo Electric Co Ltd | 半導体装置,半導体装置の製造方法,薄膜トランジスタ,薄膜トランジスタの製造方法,表示装置 |
JP4567503B2 (ja) * | 2004-03-26 | 2010-10-20 | 独立行政法人科学技術振興機構 | 酸化膜の形成方法、半導体装置、半導体装置の製造方法、SiC基板の酸化方法とそれを用いたSiC−MOS型半導体装置およびそれを用いたSiC−MOS型集積回路 |
-
2010
- 2010-07-29 CN CN201080063790.8A patent/CN102844846B/zh not_active Expired - Fee Related
- 2010-07-29 JP JP2012500449A patent/JP5666552B2/ja not_active Expired - Fee Related
- 2010-07-29 WO PCT/JP2010/062788 patent/WO2011102009A1/ja active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08298332A (ja) * | 1995-04-26 | 1996-11-12 | Sanyo Electric Co Ltd | 光起電力装置の製造方法 |
US20050215070A1 (en) * | 2002-05-24 | 2005-09-29 | Hikaru Kobayashi | Method for forming silicon dioxide film on silicon substrate, method for forming oxide film on semiconductor substrate, and method for producing semiconductor device |
JP2008066317A (ja) * | 2006-08-08 | 2008-03-21 | Osaka Univ | 絶縁膜形成方法、絶縁膜形成装置、半導体装置の製造方法、および半導体装置並びにシリコンカーバイドの基板の表面処理方法 |
CN101122047A (zh) * | 2007-09-14 | 2008-02-13 | 李绍光 | 一种太阳能电池用多晶硅制造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN102844846B (zh) | 2015-07-01 |
WO2011102009A1 (ja) | 2011-08-25 |
JPWO2011102009A1 (ja) | 2013-06-17 |
JP5666552B2 (ja) | 2015-02-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6519820B2 (ja) | トンネル誘電体層を伴う太陽電池の製造方法 | |
JP6321861B2 (ja) | ワイドバンドギャップ半導体材料含有のエミッタ領域を有する太陽電池 | |
Sazonov et al. | Low-temperature materials and thin film transistors for flexible electronics | |
Nogay et al. | Silicon-rich silicon carbide hole-selective rear contacts for crystalline-silicon-based solar cells | |
TWI660517B (zh) | 太陽能電池中之相對摻質濃度水準 | |
KR101324292B1 (ko) | 고효율 태양전지와 그 제조방법 및 이를 위한 태양전지제조장치 | |
JP2017135386A (ja) | 太陽電池の製造方法 | |
Tao et al. | 730 mV implied Voc enabled by tunnel oxide passivated contact with PECVD grown and crystallized n+ polycrystalline Si | |
CN106252458B (zh) | 制造太阳能电池的方法 | |
Rau et al. | Development of a rapid thermal annealing process for polycrystalline silicon thin-film solar cells on glass | |
Focsa et al. | Surface passivation at low temperature of p-and n-type silicon wafers using a double layer a-Si: H/SiNx: H | |
Mozaffari et al. | Efficient passivation and low resistivity for p+-Si/TiO2 contact by atomic layer deposition | |
JP2005026534A (ja) | 半導体デバイスおよびその製造方法 | |
Yoo et al. | Annealing optimization of silicon nitride film for solar cell application | |
CN102844846B (zh) | 一种太阳能电池及太阳能电池的制造方法、以及太阳能电池的制造装置 | |
TW201917909A (zh) | 用於製造同質接面光伏電池的方法 | |
WO2012014668A1 (ja) | 太陽電池およびその製造方法、並びに太陽電池の製造装置 | |
JP6162188B2 (ja) | 太陽電池の製造装置 | |
JP5806667B2 (ja) | 太陽電池およびその製造方法、並びに太陽電池の製造装置 | |
JP2004128438A (ja) | 半導体デバイスおよびその製造方法 | |
WO2022174421A1 (en) | Method of preparing passivating contacts and method of producing photovoltaic device with n-type polycrystalline silicon passivating contact | |
JP2003347567A (ja) | 半導体デバイスおよびその製造方法 | |
JP2004327675A (ja) | 半導体デバイスおよびその製造方法 | |
KR101348991B1 (ko) | 비정질 실리콘 박막의 결정화 방법 및 이를 이용한 다결정 실리콘 태양전지의 제조방법 | |
CN103026508A (zh) | 光电转换装置的制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: KIT CO., LTD. Free format text: FORMER OWNER: KIT CO., LTD. CANON MARKETING JAPAN INC. Effective date: 20130522 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20130522 Address after: Kyoto Prefecture, Tokyo City, Dongshan District, the town of 9 Ding Ding, 106 times Applicant after: Xiao Linguang Applicant after: Kit Co. Ltd Address before: Kyoto Prefecture, Tokyo City, Dongshan District, the town of 9 Ding Ding, 106 times Applicant before: Xiao Linguang Applicant before: Kit Co. Ltd Applicant before: Canon Marketing Japan Kabushiki Kaisha |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150701 Termination date: 20200729 |