CN102844817B - 在正常操作模式及rta模式中操作存储器的方法和集成电路 - Google Patents

在正常操作模式及rta模式中操作存储器的方法和集成电路 Download PDF

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Publication number
CN102844817B
CN102844817B CN201180019824.8A CN201180019824A CN102844817B CN 102844817 B CN102844817 B CN 102844817B CN 201180019824 A CN201180019824 A CN 201180019824A CN 102844817 B CN102844817 B CN 102844817B
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Prior art keywords
reference voltage
memory array
voltage node
array block
rta
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CN102844817A (zh
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阿南德·塞莎德里
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Texas Instruments Inc
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Texas Instruments Inc
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
CN201180019824.8A 2010-04-21 2011-04-21 在正常操作模式及rta模式中操作存储器的方法和集成电路 Active CN102844817B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/764,426 US8325511B2 (en) 2010-04-21 2010-04-21 Retain-till-accessed power saving mode in high-performance static memories
US12/764,426 2010-04-21
PCT/US2011/033417 WO2011133763A2 (en) 2010-04-21 2011-04-21 Retain-till-accessed (rta) power saving mode in high performance static memories

Publications (2)

Publication Number Publication Date
CN102844817A CN102844817A (zh) 2012-12-26
CN102844817B true CN102844817B (zh) 2015-12-16

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CN201180019824.8A Active CN102844817B (zh) 2010-04-21 2011-04-21 在正常操作模式及rta模式中操作存储器的方法和集成电路

Country Status (4)

Country Link
US (1) US8325511B2 (https=)
JP (1) JP5822914B2 (https=)
CN (1) CN102844817B (https=)
WO (1) WO2011133763A2 (https=)

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JP2013004110A (ja) * 2011-06-11 2013-01-07 Handotai Rikougaku Kenkyu Center:Kk 書込み用ビットラインの充放電電力を削減する半導体記憶装置
US8560931B2 (en) * 2011-06-17 2013-10-15 Texas Instruments Incorporated Low power retention random access memory with error correction on wake-up
US8654562B2 (en) * 2012-01-17 2014-02-18 Texas Instruments Incorporated Static random access memory cell with single-sided buffer and asymmetric construction
US9666483B2 (en) * 2012-02-10 2017-05-30 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit having thinner gate dielectric and method of making
US9299395B2 (en) 2012-03-26 2016-03-29 Intel Corporation Methods and systems to selectively boost an operating voltage of, and controls to an 8T bit-cell array and/or other logic blocks
US8670265B2 (en) * 2012-05-01 2014-03-11 Texas Instruments Incorporated Reducing power in SRAM using supply voltage control
US9025394B2 (en) * 2012-05-02 2015-05-05 Mediatek Inc. Memory devices and control methods thereof
US9583178B2 (en) * 2012-08-03 2017-02-28 Qualcomm Incorporated SRAM read preferred bit cell with write assist circuit
US9165641B2 (en) 2013-12-13 2015-10-20 Qualcomm Incorporated Process tolerant current leakage reduction in static random access memory (SRAM)
CN104851453B (zh) * 2014-02-18 2018-05-18 辉达公司 用于低功率sram的写入辅助方案
US9311989B2 (en) 2014-07-15 2016-04-12 Texas Instruments Incorporated Power gate for latch-up prevention
US9263096B1 (en) 2014-09-04 2016-02-16 International Business Machines Corporation Voltage comparator circuit and usage thereof
JP6470205B2 (ja) * 2015-09-03 2019-02-13 株式会社東芝 半導体メモリ
US9620200B1 (en) * 2016-03-26 2017-04-11 Arm Limited Retention voltages for integrated circuits
CN105915821A (zh) * 2016-06-02 2016-08-31 北京大学 一种基于半行交替的焦平面阵列无隙读出方法与电路
US9940999B2 (en) 2016-06-22 2018-04-10 Darryl G. Walker Semiconductor devices, circuits and methods for read and/or write assist of an SRAM circuit portion based on voltage detection and/or temperature detection circuits
US10163524B2 (en) 2016-06-22 2018-12-25 Darryl G. Walker Testing a semiconductor device including a voltage detection circuit and temperature detection circuit that can be used to generate read assist and/or write assist in an SRAM circuit portion and method therefor
KR102528314B1 (ko) * 2016-10-17 2023-05-03 에스케이하이닉스 주식회사 반도체 메모리 장치
US10008259B1 (en) * 2016-12-07 2018-06-26 Advanced Micro Devices, Inc. Limiting bitline precharge drive fight current using multiple power domains
US10877908B2 (en) * 2018-09-25 2020-12-29 Micron Technology, Inc. Isolation component
DE102018133392B4 (de) * 2018-12-21 2025-12-11 Infineon Technologies Ag Speicherzelleneinrichtung und Verfahren zum Betreiben einer Speicherzelleneinrichtung
US10885955B2 (en) 2019-04-03 2021-01-05 Micron Technology, Inc. Driver circuit equipped with power gating circuit
US11726543B2 (en) * 2019-12-13 2023-08-15 Stmicroelectronics S.R.L. Computing system power management device, system and method
JP7430425B2 (ja) * 2020-02-10 2024-02-13 国立研究開発法人科学技術振興機構 双安定回路および電子回路
JP2021190146A (ja) * 2020-05-29 2021-12-13 ソニーセミコンダクタソリューションズ株式会社 半導体記憶装置
US11955171B2 (en) 2021-09-15 2024-04-09 Mavagail Technology, LLC Integrated circuit device including an SRAM portion having end power select circuits
TWI839669B (zh) * 2021-12-27 2024-04-21 新唐科技股份有限公司 電子裝置及其電源控制的方法

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US20070279966A1 (en) * 2006-06-01 2007-12-06 Texas Instruments Incorporated 8T SRAM cell with higher voltage on the read WL
US20080253170A1 (en) * 2006-10-03 2008-10-16 Kabushiki Kaisha Toshiba Semiconductor device

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US20070279966A1 (en) * 2006-06-01 2007-12-06 Texas Instruments Incorporated 8T SRAM cell with higher voltage on the read WL
US20080253170A1 (en) * 2006-10-03 2008-10-16 Kabushiki Kaisha Toshiba Semiconductor device

Also Published As

Publication number Publication date
WO2011133763A3 (en) 2012-02-09
JP5822914B2 (ja) 2015-11-25
WO2011133763A2 (en) 2011-10-27
JP2013525936A (ja) 2013-06-20
US8325511B2 (en) 2012-12-04
CN102844817A (zh) 2012-12-26
US20110261609A1 (en) 2011-10-27

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