CN102820236B - A kind of wire bonding method of pre-plastic package lead frame - Google Patents
A kind of wire bonding method of pre-plastic package lead frame Download PDFInfo
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- CN102820236B CN102820236B CN201110151783.XA CN201110151783A CN102820236B CN 102820236 B CN102820236 B CN 102820236B CN 201110151783 A CN201110151783 A CN 201110151783A CN 102820236 B CN102820236 B CN 102820236B
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4899—Auxiliary members for wire connectors, e.g. flow-barriers, reinforcing structures, spacers, alignment aids
- H01L2224/48996—Auxiliary members for wire connectors, e.g. flow-barriers, reinforcing structures, spacers, alignment aids being formed on an item to be connected not being a semiconductor or solid-state body
- H01L2224/48997—Reinforcing structures
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
- H01L2224/85207—Thermosonic bonding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/85951—Forming additional members, e.g. for reinforcing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/146—Mixed devices
- H01L2924/1461—MEMS
Abstract
The invention provides a kind of wire bonding method of pre-plastic package lead frame, belong to chip encapsulation technology field and it is characterized in that.In this wire bonding method, after forming the second solder joint in the mode of wedge bonding, described second solder joint layers soldered ball.The bond strength of the interior pin of this wire bonding method is high, and good reliability is particularly suitable for the wire bonding of pre-plastic package lead frame.
Description
Technical field
The invention belongs to chip encapsulation technology field, relate to the gold wire bonding method of the lead frame of band pre-plastic package body.
Background technology
In IC encapsulation technology, need to select packing forms and packaging technology according to the circuit function requirements of different circuit chip.Wherein, wire bonding process and plastic packaging process is generally included in potting process.Wire bonding is exactly the process pad of chip and lead frame coupled together with very tiny metal wire.In traditional encapsulation process, be generally first IC chip (Die) is loaded and the chip on the island of lead frame, again after wire bonding, then para-linkage and part lead frame plastic packaging, to realize the fixing of parcel mode.But, for the IC chip that function is special, such as sensor chip (such as, MEMS pressure sensor chip), its potting process is different from traditional encapsulation process, first, in the mode of pre-plastic package, plastic casing is made in advance, thus lead frame is the lead frame (being defined herein as " pre-plastic package lead frame ") of band pre-plastic package body, then IC chip (Die) is loaded on the island with lead frame, and then carry out wire bonding.Like this, the harsh environmental effects that sensor chip suffers in plastic packaging process can be avoided.
Figure 1 shows that the structural representation of the pre-plastic package lead frame of prior art.In this embodiment, pre-plastic package lead frame 10 is PDIP (Plastic Double In-line Package, the in line encapsulation of plastics biserial) packing forms, and it is for encapsulated sensor chip.Wherein, 11 plastic-sealed bodies formed for pre-plastic package, referred to as pre-plastic package body, 13 is the interior pin of lead frame, and 15 is the outer pin of lead frame, and 17 is the island of lead frame.Packed sensor chip will be loaded and be fixed on island 17, in wire bonding process, be fixedly welded on the pad of chip by one end of spun gold, and its other end is fixedly welded on the upper surface of interior pin 13.
Figure 2 shows that the partial structurtes schematic diagram of the encapsulating structure that pre-plastic package lead frame wire bonding method is conventionally formed.The wherein bonding structure of two spun golds has been shown in Fig. 2.As shown in Figure 2, when adopting existing wire bonding method, first form the first solder joint between the first end 191 of spun gold 19 and the pad 181 of chip 18, then form bank, so between second end 193 and lead frame (such as pin 19) of spun gold 19, form the second solder joint; Normally, the first solder joint is formed by ball-shaped welded (ball bonding) mode, and the second solder joint is formed by wedge bonding mode (wedge bonding); The difference of two kinds of welding manners is: in ball-shaped welded each weld cycle start can form a free air ball (Free Air Ball, FAB), then this FAB is welded on pad and forms the first solder joint; For wedge bonding, go between and to be welded direct in lead frame on pin under pressure and ultrasonic and/or thermal energy homenergic effect.
But, in the process of pre-plastic package, pre-plastic package body 11 shown in Fig. 1 is normally formed by mould injection molding, such as, in the upper and lower surface of lead frame, mold and bed die are set respectively, mold and bed die clamping lead frame, fill the die cavity of two moulds with resin during plastic packaging, thus the pre-plastic package body formed on lead frame divides and pre-plastic package body under lead frame divides.During pre-plastic package, the material such as resin for the formation of pre-plastic package body is easy to excessive to interior pin 13 from slit between mould (such as mold) and leadframe surfaces, may form the micro-structures such as the plastics overlap that naked eyes are difficult to see, the bond area of its internal pin 13 pollutes.The pollution caused due to pre-plastic package process can reduce spun gold end 193 and the bond strength of interior pin 13 greatly, even makes spun gold end 193 be difficult to be fixedly welded on the silver layer of interior pin 13.Therefore, the reliability of wire bonding is greatly reduced.
Summary of the invention
The object of the invention is to, improve intensity and the reliability of the wire bonding of pre-plastic package lead frame.
For realizing above object or other object, the invention provides a kind of wire bonding method of pre-plastic package lead frame, wherein, after forming the second solder joint in the mode of wedge bonding, described second solder joint layering soldered ball.
According to the preferred embodiment of wire bonding method provided by the invention, wherein, described soldered ball is layered in the fish tail position aiming at described second pad.
Preferably, described wire bonding is gold wire bonding.
Preferably, the method is further comprising the steps of:
The first solder joint is formed in the mode of ball-shaped welded; And
Arch silk forms bank.
Preferably, described soldered ball adopts the capillary of bonding equipment to be formed.
Preferably, described wedge bonding uses having come of the wedge shape chopper of wedge pressure bonding equipment.
Preferably, the diameter range of described soldered ball is 0.05mm to 0.1mm substantially.
Preferably, described wedge bonding is thermocompression bonding, ultrasonic bond or thermosonic bonding, or the combination of above welding manner.
Technique effect of the present invention is, by layering soldered ball on the second solder joint of wedge bonding, the bond strength between interior pin and lead-in wire can be made greatly to improve, and, the pollution problem because pre-plastic package process causes can be avoided, when using the method wire bonding pre-plastic package lead frame, good reliability.
Accompanying drawing explanation
From following detailed description by reference to the accompanying drawings, above and other objects of the present invention and advantage will be made more completely clear.
Fig. 1 is the structural representation of the pre-plastic package lead frame of prior art.
Fig. 2 is the partial structurtes schematic diagram of the encapsulating structure that pre-plastic package lead frame wire bonding method is conventionally formed.
Fig. 3 is the partial structurtes schematic diagram of the encapsulating structure that pre-plastic package lead frame is formed according to the wire bonding method that the embodiment of the present invention provides.
Embodiment
Introduce below be of the present invention multiple may some in embodiment, aim to provide basic understanding of the present invention.Be not intended to confirm key of the present invention or conclusive key element or limit claimed scope.Easy understand, according to technical scheme of the present invention, do not changing under connotation of the present invention, one of ordinary skill in the art can propose other implementation that can mutually replace.Therefore, following embodiment and accompanying drawing are only the exemplary illustrations to technical scheme of the present invention, and should not be considered as of the present invention all or the restriction be considered as technical solution of the present invention or restriction.
In the present invention, " the first solder joint " is the tie point between index wire and the pad of chip, and " the second solder joint " is the tie point between index wire and lead frame, and this is conventionally known to one of skill in the art.
Figure 3 shows that the partial structurtes schematic diagram of the encapsulating structure that pre-plastic package lead frame is formed according to the wire bonding method that the embodiment of the present invention provides.The bonding structures of wherein two lead-in wires have been shown in Fig. 3, in this example, have gone between as spun gold, be appreciated that, spun gold both can for purity be more than or equal to 99.99% spun gold, also can be the spun gold (i.e. alloy gold wire) doped with other element.This wire bonding method is used for carrying out wire bonding to all pre-plastic package lead frames as shown in Figure 1.The wire bonding method of the present embodiment is described shown in composition graphs 3.
First, the first solder joint is formed in the mode of ball-shaped welded.As shown in Figure 3, the first solder joint is formed between the first end 191 of spun gold 19 and the pad 181 of chip 18, in ball-shaped welded process, bonding equipment uses chopper (capillary) to form FAB, particularly, the process that forms FAB is by ionized air gap " electronic flame extinguishing " (Electronic Flame-off, EFO) process implementation.Then, this FAB is welded to interface on pad 181 and forms the first solder joint.The concrete material of pad 181 and shape etc. do not limit by the present invention.
Second step, arch silk forms bank; The concrete of bank does not highly limit by the present invention.
3rd step, forms the second solder joint in the mode of wedge bonding.As shown in Figure 3, the second solder joint is formed between second end 193 of spun gold 19 and the interior pin 19 of lead frame, in this example, by the wedge shape chopper (Wedge) of wedge pressure bonding equipment, second end 193 of spun gold is welded direct on the bond area of interior pin 19 under pressure and ultrasonic energy effect, thus forms the second solder joint.Due to the impact of previous pre-plastic package process, the bond area of the interior pin 19 of the lead frame (being defined herein as " pre-plastic package lead frame ") of band pre-plastic package body is easily contaminated.Therefore, the bond strength of the second solder joint and reliability are difficult to be guaranteed.
4th step, the second solder joint layers soldered ball.By layering soldered ball 195 further, the second end 193 of spun gold 19 can be made firmly to weld with the bond area of interior pin 19, the bond strength of the second solder joint is improved greatly, and the reliability of every root gold wire bonding can be ensured.Particularly, the method forming soldered ball 19 in the process of ball-shaped welded mode can be used to form the soldered ball of layering, such as, adopt the capillary (capillary) of bonding equipment to form soldered ball.
When the second solder joint adopts wedge bonding, on the second solder joint, fish tail (Stitch) position between interior pin surface and spun gold, can be formed.Preferably, soldered ball 19 is aimed at fish tail position and is layered, thus is conducive to the further raising of bond strength.In addition, the diameter range of the soldered ball 19 of layering can be approximately 0.05mm to 0.1mm.
So far, the wire bonding process of this embodiment completes.Therefore, by above wire bonding method, the intensity of the wire bonding of pre-plastic package lead frame can be ensured, improve the reliability of its encapsulation, and, new wire bonding method does not need new wire bonding apparatus, and traditional main flow bonding type all can realize above procedure, and equipment investment cost is low.
It should be noted that, thermocompression bonding, ultrasonic bond or thermosonic bonding can be used in above ball-shaped welded mode, wedge bonding mode or with the combination of upper type.
It should be noted that, in above wire bonding process, to be illustrated to the lead key closing process of face arch silk, but above 4th step can be applied in the lead key closing process of oppositely arch silk equally.
Although be below only illustrated with the bonding process of spun gold, it will be understood by those skilled in the art that above procedure, can analogize equally and be applied to the situation of lead-in wire for other material, such as, copper cash, aluminum steel.
Above example mainly describes the wire bonding method of pre-plastic package lead frame of the present invention.Although be only described some of them embodiments of the present invention, those of ordinary skill in the art should understand, and the present invention can implement with other forms many not departing from its purport and scope.Therefore, the example shown and execution mode are regarded as illustrative and not restrictive, when do not depart from as appended each claim define the present invention spirit and scope, the present invention may contain various amendments and replacement.
Claims (7)
1. a wire bonding method for pre-plastic package lead frame, is characterized in that, after the second solder joint between the silver layer forming pin in lead-in wire and described pre-plastic package lead frame in the mode of wedge bonding, described second solder joint layers soldered ball; Wherein, the diameter range of described soldered ball is 0.05mm to 0.1mm.
2. wire bonding method as claimed in claim 1, it is characterized in that, described soldered ball is layered in the fish tail position aiming at described second solder joint.
3. wire bonding method as claimed in claim 1 or 2, it is characterized in that, described wire bonding is gold wire bonding.
4. wire bonding method as claimed in claim 1, is characterized in that, further comprising the steps of:
The first solder joint is formed in the mode of ball-shaped welded; And
Arch silk forms bank.
5. the wire bonding method as described in claim 1 or 4, is characterized in that, described soldered ball adopts the capillary of bonding equipment to be formed.
6. wire bonding method as claimed in claim 1, is characterized in that, described wedge bonding uses having come of the wedge shape chopper of wedge pressure bonding equipment.
7. wire bonding method as claimed in claim 1, it is characterized in that, described wedge bonding is thermocompression bonding, ultrasonic bond or thermosonic bonding, or the combination of above welding manner.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110151783.XA CN102820236B (en) | 2011-06-08 | 2011-06-08 | A kind of wire bonding method of pre-plastic package lead frame |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110151783.XA CN102820236B (en) | 2011-06-08 | 2011-06-08 | A kind of wire bonding method of pre-plastic package lead frame |
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| CN102820236A CN102820236A (en) | 2012-12-12 |
| CN102820236B true CN102820236B (en) | 2015-08-26 |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107175400B (en) * | 2017-04-14 | 2019-12-06 | 国家纳米科学中心 | gold wire welding method |
| CN107731772B (en) * | 2017-09-13 | 2020-08-04 | 北京无线电测量研究所 | Wedge-shaped bonding lead reinforcing structure and reinforcing method |
| EP3514515B1 (en) | 2018-01-18 | 2020-03-04 | Samsung SDI Co., Ltd. | Thermocouple and method for manufacturing the thermocouple |
| CN109301059A (en) * | 2018-09-21 | 2019-02-01 | 佛山市国星光电股份有限公司 | Bonding wire packaging technology, LED component and the LED light of LED component |
| CN109192848B (en) * | 2018-10-10 | 2024-02-20 | 广东晶科电子股份有限公司 | LED device and wire bonding method thereof |
| CN117330234B (en) * | 2023-11-28 | 2024-03-15 | 微智医疗器械有限公司 | Pressure sensor assembly manufacturing method and pressure sensor assembly |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5960262A (en) * | 1997-09-26 | 1999-09-28 | Texas Instruments Incorporated | Stitch bond enhancement for hard-to-bond materials |
| CN1670935A (en) * | 2004-03-18 | 2005-09-21 | 株式会社电装 | Wire bonding method and semiconductor device |
| CN101281876A (en) * | 2007-04-04 | 2008-10-08 | 松下电器产业株式会社 | Method of manufacturing semiconductor device and semiconductor device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7427009B2 (en) * | 2004-06-24 | 2008-09-23 | Asm Technology Singapore Pte Ltd. | Capillary for wire bonding |
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- 2011-06-08 CN CN201110151783.XA patent/CN102820236B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5960262A (en) * | 1997-09-26 | 1999-09-28 | Texas Instruments Incorporated | Stitch bond enhancement for hard-to-bond materials |
| CN1670935A (en) * | 2004-03-18 | 2005-09-21 | 株式会社电装 | Wire bonding method and semiconductor device |
| CN101281876A (en) * | 2007-04-04 | 2008-10-08 | 松下电器产业株式会社 | Method of manufacturing semiconductor device and semiconductor device |
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| CN102820236A (en) | 2012-12-12 |
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