CN102810547B - 检测器件制造方法、检测器件和检测系统 - Google Patents

检测器件制造方法、检测器件和检测系统 Download PDF

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Publication number
CN102810547B
CN102810547B CN201210168410.8A CN201210168410A CN102810547B CN 102810547 B CN102810547 B CN 102810547B CN 201210168410 A CN201210168410 A CN 201210168410A CN 102810547 B CN102810547 B CN 102810547B
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impurity semiconductor
electrode
semiconductor layer
film
semiconductor film
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Chinese (zh)
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CN102810547A (zh
Inventor
藤吉健太郎
望月千织
渡边实
大藤将人
横山启吾
川锅润
和山弘
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/195—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
CN201210168410.8A 2011-05-31 2012-05-28 检测器件制造方法、检测器件和检测系统 Active CN102810547B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2011122015 2011-05-31
JP2011-122015 2011-05-31
JP2011209461A JP5709709B2 (ja) 2011-05-31 2011-09-26 検出装置の製造方法、その検出装置及び検出システム
JP2011-209461 2011-09-26

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CN102810547A CN102810547A (zh) 2012-12-05
CN102810547B true CN102810547B (zh) 2015-08-19

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US (1) US8866093B2 (https=)
EP (1) EP2530716B1 (https=)
JP (1) JP5709709B2 (https=)
CN (1) CN102810547B (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5709810B2 (ja) * 2012-10-02 2015-04-30 キヤノン株式会社 検出装置の製造方法、その検出装置及び検出システム
CN103915404A (zh) * 2013-01-04 2014-07-09 佳邦科技股份有限公司 用于增加内外电极间的结合力的电子结构及电子封装构件
JP2014236162A (ja) * 2013-06-04 2014-12-15 キヤノン株式会社 検出装置、その製造方法及び放射線検出システム
JP6463136B2 (ja) 2014-02-14 2019-01-30 キヤノン株式会社 放射線検出装置及び放射線検出システム
CN105101633B (zh) * 2014-05-20 2018-01-30 佳邦科技股份有限公司 电子结构及其制作方法及电子封装构件
JP6704599B2 (ja) * 2015-04-28 2020-06-03 天馬微電子有限公司 半導体素子、半導体素子の製造方法、フォトダイオードアレイおよび撮像装置
US10804314B2 (en) 2016-09-21 2020-10-13 Sharp Kabushiki Kaisha Imaging panel and method for producing same
WO2018169009A1 (ja) * 2017-03-16 2018-09-20 シャープ株式会社 撮像装置およびｘ線撮像装置
JP2019145595A (ja) * 2018-02-16 2019-08-29 シャープ株式会社 アクティブマトリクス基板及びそれを備えたｘ線撮像パネルと製造方法
JP6929267B2 (ja) * 2018-12-26 2021-09-01 キヤノン株式会社 撮像装置及び撮像システム
CN109742126B (zh) * 2019-01-11 2022-02-11 京东方科技集团股份有限公司 显示基板及其制备方法、显示面板、显示装置
CN114975491B (zh) * 2021-02-26 2026-02-13 京东方科技集团股份有限公司 一种阵列基板、平板探测器和阵列基板的制作方法
JP7449264B2 (ja) * 2021-08-18 2024-03-13 株式会社東芝 放射線検出器

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Publication number Priority date Publication date Assignee Title
US5930591A (en) * 1997-04-23 1999-07-27 Litton Systems Canada Limited High resolution, low voltage flat-panel radiation imaging sensors
CN1517069B (zh) * 2003-01-27 2012-03-28 佳能株式会社 放射线摄像装置和放射线摄像系统
JP4323827B2 (ja) * 2003-02-14 2009-09-02 キヤノン株式会社 固体撮像装置及び放射線撮像装置
US20060060863A1 (en) 2004-09-22 2006-03-23 Jennifer Lu System and method for controlling nanostructure growth
JP5328169B2 (ja) * 2007-02-28 2013-10-30 キヤノン株式会社 撮像装置及び放射線撮像システム
US7638772B2 (en) * 2007-02-28 2009-12-29 Canon Kabushiki Kaisha Imaging apparatus and radiation imaging system
JP5185013B2 (ja) * 2008-01-29 2013-04-17 富士フイルム株式会社 電磁波検出素子
WO2009116177A1 (ja) * 2008-03-21 2009-09-24 株式会社島津製作所 光マトリックスデバイス
US8129810B2 (en) * 2009-06-19 2012-03-06 Carestream Health, Inc. Continuous large area imaging and display arrays using readout arrays fabricated in silicon-on-glass substrates
JP5502685B2 (ja) * 2010-09-29 2014-05-28 富士フイルム株式会社 放射線検出素子

Also Published As

Publication number Publication date
EP2530716A1 (en) 2012-12-05
JP5709709B2 (ja) 2015-04-30
EP2530716B1 (en) 2018-04-25
JP2013012697A (ja) 2013-01-17
CN102810547A (zh) 2012-12-05
US8866093B2 (en) 2014-10-21
US20120305785A1 (en) 2012-12-06

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