CN102754215A - 制造光伏电池的方法、由该方法制造的光伏电池及其应用 - Google Patents
制造光伏电池的方法、由该方法制造的光伏电池及其应用 Download PDFInfo
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- CN102754215A CN102754215A CN2010800616051A CN201080061605A CN102754215A CN 102754215 A CN102754215 A CN 102754215A CN 2010800616051 A CN2010800616051 A CN 2010800616051A CN 201080061605 A CN201080061605 A CN 201080061605A CN 102754215 A CN102754215 A CN 102754215A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0321—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 characterised by the doping material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Chemical & Material Sciences (AREA)
- Sustainable Energy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/591,390 US8586862B2 (en) | 2009-11-18 | 2009-11-18 | Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof |
| US12/591,391 | 2009-11-18 | ||
| US12/591,390 | 2009-11-18 | ||
| US12/591,391 US20110114147A1 (en) | 2009-11-18 | 2009-11-18 | Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof |
| PCT/IB2010/055221 WO2011061694A2 (fr) | 2009-11-18 | 2010-11-17 | Procédé de fabrication de cellules photovoltaïques, cellules photovoltaïques produites selon ce procédé, et utilisations de celles-ci |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102754215A true CN102754215A (zh) | 2012-10-24 |
Family
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Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010800616051A Pending CN102754215A (zh) | 2009-11-18 | 2010-11-17 | 制造光伏电池的方法、由该方法制造的光伏电池及其应用 |
| CN201080061602.8A Expired - Fee Related CN102725854B (zh) | 2009-11-18 | 2010-11-17 | 制造光伏电池的方法、由此产生的光伏电池及其应用 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201080061602.8A Expired - Fee Related CN102725854B (zh) | 2009-11-18 | 2010-11-17 | 制造光伏电池的方法、由此产生的光伏电池及其应用 |
Country Status (5)
| Country | Link |
|---|---|
| EP (2) | EP2502278A2 (fr) |
| JP (2) | JP2013511839A (fr) |
| CN (2) | CN102754215A (fr) |
| CA (2) | CA2780913A1 (fr) |
| WO (2) | WO2011061694A2 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104051575A (zh) * | 2014-06-20 | 2014-09-17 | 润峰电力有限公司 | 一种仿生双面受光太阳能电池的制作工艺 |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8796060B2 (en) | 2009-11-18 | 2014-08-05 | Solar Wind Technologies, Inc. | Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof |
| US8586862B2 (en) | 2009-11-18 | 2013-11-19 | Solar Wind Technologies, Inc. | Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof |
| KR101627028B1 (ko) * | 2014-02-20 | 2016-06-03 | 제일모직주식회사 | 양면형 태양전지의 제조방법 |
| KR101627029B1 (ko) * | 2014-02-20 | 2016-06-03 | 제일모직주식회사 | Ibc 태양전지의 제조방법 |
| ES2939949T3 (es) | 2015-10-25 | 2023-04-28 | Solaround Ltd | Procedimiento de fabricación de células bifaciales |
| CN107340785B (zh) * | 2016-12-15 | 2021-05-18 | 江苏林洋新能源科技有限公司 | 一种基于智能化控制的双面光伏电池组件跟踪方法及控制器 |
| CH713453A1 (de) | 2017-02-13 | 2018-08-15 | Evatec Ag | Verfahren zur Herstellung eines Substrates mit einer bordotierten Oberfläche. |
| KR102558939B1 (ko) * | 2018-01-08 | 2023-08-14 | 솔라라운드 리미티드 | 양면 광전지 및 제작 방법 |
| CN114649427B (zh) * | 2021-09-14 | 2023-09-12 | 浙江晶科能源有限公司 | 太阳能电池及光伏组件 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4322571A (en) * | 1980-07-17 | 1982-03-30 | The Boeing Company | Solar cells and methods for manufacture thereof |
| US6147297A (en) * | 1995-06-21 | 2000-11-14 | Fraunhofer Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. | Solar cell having an emitter provided with a surface texture and a process for the fabrication thereof |
| US20070113881A1 (en) * | 2005-11-22 | 2007-05-24 | Guardian Industries Corp. | Method of making solar cell with antireflective coating using combustion chemical vapor deposition (CCVD) and corresponding product |
| WO2009010585A2 (fr) * | 2007-07-18 | 2009-01-22 | Interuniversitair Microelektronica Centrum Vzw | Procédé pour produire une structure d'émetteur et structures d'émetteur obtenues par ce procédé |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4989059A (en) | 1988-05-13 | 1991-01-29 | Mobil Solar Energy Corporation | Solar cell with trench through pn junction |
| AU701213B2 (en) * | 1995-10-05 | 1999-01-21 | Suniva, Inc. | Self-aligned locally deep-diffused emitter solar cell |
| US5871591A (en) | 1996-11-01 | 1999-02-16 | Sandia Corporation | Silicon solar cells made by a self-aligned, selective-emitter, plasma-etchback process |
| US6552414B1 (en) | 1996-12-24 | 2003-04-22 | Imec Vzw | Semiconductor device with selectively diffused regions |
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- 2010-11-17 EP EP10793049A patent/EP2502278A2/fr not_active Withdrawn
- 2010-11-17 WO PCT/IB2010/055221 patent/WO2011061694A2/fr active Application Filing
- 2010-11-17 JP JP2012539462A patent/JP2013511839A/ja active Pending
- 2010-11-17 JP JP2012539461A patent/JP6027443B2/ja not_active Expired - Fee Related
- 2010-11-17 CN CN2010800616051A patent/CN102754215A/zh active Pending
- 2010-11-17 CA CA2780913A patent/CA2780913A1/fr not_active Abandoned
- 2010-11-17 CN CN201080061602.8A patent/CN102725854B/zh not_active Expired - Fee Related
- 2010-11-17 WO PCT/IB2010/055219 patent/WO2011061693A2/fr active Application Filing
- 2010-11-17 EP EP10793317A patent/EP2502277A2/fr not_active Withdrawn
- 2010-11-17 CA CA2781085A patent/CA2781085A1/fr not_active Abandoned
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104051575A (zh) * | 2014-06-20 | 2014-09-17 | 润峰电力有限公司 | 一种仿生双面受光太阳能电池的制作工艺 |
| CN104051575B (zh) * | 2014-06-20 | 2016-08-17 | 润峰电力有限公司 | 一种仿生双面受光太阳能电池的制作工艺 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2013511838A (ja) | 2013-04-04 |
| CN102725854A (zh) | 2012-10-10 |
| CN102725854B (zh) | 2015-11-25 |
| JP6027443B2 (ja) | 2016-11-16 |
| EP2502277A2 (fr) | 2012-09-26 |
| WO2011061693A3 (fr) | 2012-01-05 |
| JP2013511839A (ja) | 2013-04-04 |
| WO2011061693A2 (fr) | 2011-05-26 |
| WO2011061694A3 (fr) | 2012-01-19 |
| CA2780913A1 (fr) | 2011-05-26 |
| WO2011061694A2 (fr) | 2011-05-26 |
| CA2781085A1 (fr) | 2011-05-26 |
| EP2502278A2 (fr) | 2012-09-26 |
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