CN102738030B - 一种pn结结深测算方法 - Google Patents
一种pn结结深测算方法 Download PDFInfo
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- CN102738030B CN102738030B CN201210212571.2A CN201210212571A CN102738030B CN 102738030 B CN102738030 B CN 102738030B CN 201210212571 A CN201210212571 A CN 201210212571A CN 102738030 B CN102738030 B CN 102738030B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2648—Characterising semiconductor materials
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/041—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Biochemistry (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Health & Medical Sciences (AREA)
- Electrochemistry (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
Claims (8)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210212571.2A CN102738030B (zh) | 2012-06-21 | 2012-06-21 | 一种pn结结深测算方法 |
US14/407,170 US20150177312A1 (en) | 2012-06-21 | 2012-09-21 | Method for determining pn junction depth |
PCT/CN2012/081780 WO2013189132A1 (zh) | 2012-06-21 | 2012-09-21 | 一种pn结结深测算方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210212571.2A CN102738030B (zh) | 2012-06-21 | 2012-06-21 | 一种pn结结深测算方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102738030A CN102738030A (zh) | 2012-10-17 |
CN102738030B true CN102738030B (zh) | 2014-07-02 |
Family
ID=46993286
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210212571.2A Expired - Fee Related CN102738030B (zh) | 2012-06-21 | 2012-06-21 | 一种pn结结深测算方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20150177312A1 (zh) |
CN (1) | CN102738030B (zh) |
WO (1) | WO2013189132A1 (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103557827B (zh) * | 2013-10-21 | 2016-02-17 | 南通大学 | 一种基于激光氧化法的p型硅太阳能电池pn结结深测量方法 |
CN111596137B (zh) * | 2020-05-25 | 2022-08-09 | 上海华力集成电路制造有限公司 | 场效应晶体管源漏电阻的提取方法 |
CN117007625A (zh) * | 2023-09-28 | 2023-11-07 | 北京中科科仪股份有限公司 | 一种pn结的扫描电镜测试方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6475816B1 (en) * | 2001-02-13 | 2002-11-05 | Advanced Micro Devices, Inc. | Method for measuring source and drain junction depth in silicon on insulator technology |
CN101383306A (zh) * | 2008-10-22 | 2009-03-11 | 中国科学院上海技术物理研究所 | 一种测量碲镉汞材料pn结结深的方法 |
EP2139033A2 (en) * | 2008-06-27 | 2009-12-30 | Imec | Method for determining the doping profile of a partially activated doped semiconductor region |
CN102435627A (zh) * | 2011-08-30 | 2012-05-02 | 上海华碧检测技术有限公司 | 一种超结高压功率mosfet器件掺杂结构的染色分析方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5329075B2 (zh) * | 1972-02-12 | 1978-08-18 | ||
JPS5947738A (ja) * | 1982-09-11 | 1984-03-17 | Toshiba Corp | 拡散層の測定方法 |
US4521705A (en) * | 1983-07-20 | 1985-06-04 | Honeywell Inc. | Reliable field-effect transistor timer circuit |
JP2822961B2 (ja) * | 1995-12-14 | 1998-11-11 | 日本電気株式会社 | 半導体装置 |
US6950190B2 (en) * | 2003-01-09 | 2005-09-27 | Therma-Wave, Inc. | Scatterometry for junction metrology |
US20040147070A1 (en) * | 2003-01-24 | 2004-07-29 | National Chiao-Tung University | Ultra-shallow junction formation for nano MOS devices using amorphous-si capping layer |
JP2005079339A (ja) * | 2003-08-29 | 2005-03-24 | National Institute Of Advanced Industrial & Technology | 半導体装置、およびその半導体装置を用いた電力変換器、駆動用インバータ、汎用インバータ、大電力高周波通信機器 |
GB0427318D0 (en) * | 2004-12-14 | 2005-01-19 | Imec Inter Uni Micro Electr | Method and device for the independent extraction of carrier concentration level and electrical junction depth in a semiconductor substrate |
JP2006245264A (ja) * | 2005-03-03 | 2006-09-14 | New Japan Radio Co Ltd | 半導体受光素子を有する集積回路 |
US7982224B2 (en) * | 2007-10-15 | 2011-07-19 | Panasonic Corporation | Semiconductor device with silicon carbide epitaxial layer including dopant profiles for reducing current overconcentration |
HUE026962T2 (en) * | 2009-03-17 | 2016-07-28 | Imec | A method for determining the transient depth of a semiconductor area |
CN102338758A (zh) * | 2011-08-03 | 2012-02-01 | 上海华碧检测技术有限公司 | 一种双极型晶体管器件掺杂结构的pn结染色方法 |
-
2012
- 2012-06-21 CN CN201210212571.2A patent/CN102738030B/zh not_active Expired - Fee Related
- 2012-09-21 US US14/407,170 patent/US20150177312A1/en not_active Abandoned
- 2012-09-21 WO PCT/CN2012/081780 patent/WO2013189132A1/zh active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6475816B1 (en) * | 2001-02-13 | 2002-11-05 | Advanced Micro Devices, Inc. | Method for measuring source and drain junction depth in silicon on insulator technology |
EP2139033A2 (en) * | 2008-06-27 | 2009-12-30 | Imec | Method for determining the doping profile of a partially activated doped semiconductor region |
CN101383306A (zh) * | 2008-10-22 | 2009-03-11 | 中国科学院上海技术物理研究所 | 一种测量碲镉汞材料pn结结深的方法 |
CN102435627A (zh) * | 2011-08-30 | 2012-05-02 | 上海华碧检测技术有限公司 | 一种超结高压功率mosfet器件掺杂结构的染色分析方法 |
Also Published As
Publication number | Publication date |
---|---|
CN102738030A (zh) | 2012-10-17 |
WO2013189132A1 (zh) | 2013-12-27 |
US20150177312A1 (en) | 2015-06-25 |
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Effective date of registration: 20160704 Address after: 300304 Tianjin District of Dongli City Huaming High-tech Zone HuaFeng Road No. 6 E1 Patentee after: Zhongke Huayi (Tianjin) Microelectronics Co.,Ltd. Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics of the Chinese Academy of Sciences |
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Effective date of registration: 20230531 Address after: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee after: Institute of Microelectronics of the Chinese Academy of Sciences Address before: 300304 E1, No. 6 Huafeng Road, Huaming High tech Zone, Dongli District, Tianjin City Patentee before: Zhongke Huayi (Tianjin) Microelectronics Co.,Ltd. |
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Granted publication date: 20140702 |