CN102724803A - 感应耦合等离子体处理装置 - Google Patents

感应耦合等离子体处理装置 Download PDF

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Publication number
CN102724803A
CN102724803A CN2012102019234A CN201210201923A CN102724803A CN 102724803 A CN102724803 A CN 102724803A CN 2012102019234 A CN2012102019234 A CN 2012102019234A CN 201210201923 A CN201210201923 A CN 201210201923A CN 102724803 A CN102724803 A CN 102724803A
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CN
China
Prior art keywords
antenna
antenna part
outside
inboard
plasma
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Pending
Application number
CN2012102019234A
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English (en)
Chinese (zh)
Inventor
齐藤均
佐藤亮
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN102724803A publication Critical patent/CN102724803A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/364—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith using a particular conducting material, e.g. superconductor
    • H01Q1/366—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith using a particular conducting material, e.g. superconductor using an ionized gas
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2242/00—Auxiliary systems
    • H05H2242/20—Power circuits

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
CN2012102019234A 2008-05-14 2009-05-14 感应耦合等离子体处理装置 Pending CN102724803A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008-127166 2008-05-14
JP2008127166A JP5551343B2 (ja) 2008-05-14 2008-05-14 誘導結合プラズマ処理装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CNA2009101386817A Division CN101583234A (zh) 2008-05-14 2009-05-14 感应耦合等离子体处理装置

Publications (1)

Publication Number Publication Date
CN102724803A true CN102724803A (zh) 2012-10-10

Family

ID=41365124

Family Applications (2)

Application Number Title Priority Date Filing Date
CN2012102019234A Pending CN102724803A (zh) 2008-05-14 2009-05-14 感应耦合等离子体处理装置
CNA2009101386817A Pending CN101583234A (zh) 2008-05-14 2009-05-14 感应耦合等离子体处理装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
CNA2009101386817A Pending CN101583234A (zh) 2008-05-14 2009-05-14 感应耦合等离子体处理装置

Country Status (4)

Country Link
JP (1) JP5551343B2 (ko)
KR (2) KR101124754B1 (ko)
CN (2) CN102724803A (ko)
TW (1) TWI475931B (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113301701A (zh) * 2020-02-21 2021-08-24 东京毅力科创株式会社 天线段和电感耦合等离子体处理装置

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KR101532747B1 (ko) * 2009-12-29 2015-06-30 주식회사 원익아이피에스 플라즈마 발생장치
CN102115879B (zh) * 2009-12-31 2013-06-26 丽佳达普株式会社 基板处理装置
US9338871B2 (en) 2010-01-29 2016-05-10 Applied Materials, Inc. Feedforward temperature control for plasma processing apparatus
US8916793B2 (en) 2010-06-08 2014-12-23 Applied Materials, Inc. Temperature control in plasma processing apparatus using pulsed heat transfer fluid flow
US8880227B2 (en) 2010-05-27 2014-11-04 Applied Materials, Inc. Component temperature control by coolant flow control and heater duty cycle control
JP2011258622A (ja) * 2010-06-07 2011-12-22 Tokyo Electron Ltd プラズマ処理装置及びその誘電体窓構造
JP5597071B2 (ja) * 2010-09-06 2014-10-01 東京エレクトロン株式会社 アンテナユニットおよび誘導結合プラズマ処理装置
JP5851682B2 (ja) * 2010-09-28 2016-02-03 東京エレクトロン株式会社 プラズマ処理装置
JP5723130B2 (ja) * 2010-09-28 2015-05-27 東京エレクトロン株式会社 プラズマ処理装置
JP5800547B2 (ja) * 2011-03-29 2015-10-28 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP5781349B2 (ja) * 2011-03-30 2015-09-24 東京エレクトロン株式会社 プラズマ処理装置
JP5666991B2 (ja) * 2011-06-08 2015-02-12 東京エレクトロン株式会社 誘導結合プラズマ用アンテナユニットおよび誘導結合プラズマ処理装置
JP2013077715A (ja) * 2011-09-30 2013-04-25 Tokyo Electron Ltd 誘導結合プラズマ用アンテナユニットおよび誘導結合プラズマ処理装置
US10274270B2 (en) 2011-10-27 2019-04-30 Applied Materials, Inc. Dual zone common catch heat exchanger/chiller
JP5894785B2 (ja) * 2011-12-19 2016-03-30 東京エレクトロン株式会社 誘導結合プラズマ用アンテナユニットおよび誘導結合プラズマ処理装置
JP5878771B2 (ja) * 2012-02-07 2016-03-08 東京エレクトロン株式会社 誘導結合プラズマ処理方法および誘導結合プラズマ処理装置
JP6010305B2 (ja) 2012-02-07 2016-10-19 東京エレクトロン株式会社 誘導結合プラズマ用アンテナユニット、誘導結合プラズマ処理装置および誘導結合プラズマ処理方法
KR101468657B1 (ko) * 2012-12-28 2014-12-03 엘아이지에이디피 주식회사 유도 결합 플라즈마 처리 장치
KR101619899B1 (ko) 2014-07-25 2016-05-12 인베니아 주식회사 플라즈마 발생모듈 및 이를 포함하는 플라즈마 처리장치
CN105632860B (zh) * 2014-10-31 2021-04-09 北京北方华创微电子装备有限公司 等离子体加工设备
JP6062461B2 (ja) * 2015-01-30 2017-01-18 東京エレクトロン株式会社 プラズマ処理装置
JP6097317B2 (ja) * 2015-01-30 2017-03-15 東京エレクトロン株式会社 プラズマ処理方法
KR102055371B1 (ko) * 2019-02-01 2019-12-13 주식회사 원익아이피에스 유도결합 플라즈마 처리장치
CN110047748B (zh) * 2019-04-22 2022-03-04 江南大学 一种低损伤AlGaN/GaNHEMT栅槽刻蚀方法
KR102041518B1 (ko) * 2019-07-18 2019-11-06 에이피티씨 주식회사 분리형 플라즈마 소스 코일 및 이의 제어 방법

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WO2002005308A2 (en) * 2000-07-06 2002-01-17 Applied Materials, Inc. A plasma reactor having a symmetric parallel conductor coil antenna
JP2003022977A (ja) * 2001-07-10 2003-01-24 Mitsubishi Heavy Ind Ltd 給電アンテナ及び半導体製造装置
CN1437433A (zh) * 2002-02-05 2003-08-20 东京毅力科创株式会社 电感耦合等离子体处理装置
JP2003234338A (ja) * 2002-02-08 2003-08-22 Tokyo Electron Ltd 誘導結合プラズマ処理装置
US20030218427A1 (en) * 2002-05-22 2003-11-27 Applied Materials, Inc. Capacitively coupled plasma reactor with magnetic plasma control
JP2004356511A (ja) * 2003-05-30 2004-12-16 Tokyo Electron Ltd プラズマ処理装置
CN101076220A (zh) * 2006-05-18 2007-11-21 东京毅力科创株式会社 电感耦合等离子体处理装置和等离子体处理方法

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JP3371176B2 (ja) * 1995-01-25 2003-01-27 ソニー株式会社 プラズマ処理装置および半導体装置の製造方法
US5716451A (en) * 1995-08-17 1998-02-10 Tokyo Electron Limited Plasma processing apparatus
KR100440736B1 (ko) * 2001-02-19 2004-07-15 오범환 동축 병렬 안테나형 플라즈마 소스의 국소 인덕턴스직접조절 장치 및 방법
US7571697B2 (en) * 2001-09-14 2009-08-11 Lam Research Corporation Plasma processor coil
JP2006221852A (ja) * 2005-02-08 2006-08-24 Canon Anelva Corp 誘導結合型プラズマ発生装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002005308A2 (en) * 2000-07-06 2002-01-17 Applied Materials, Inc. A plasma reactor having a symmetric parallel conductor coil antenna
JP2003022977A (ja) * 2001-07-10 2003-01-24 Mitsubishi Heavy Ind Ltd 給電アンテナ及び半導体製造装置
CN1437433A (zh) * 2002-02-05 2003-08-20 东京毅力科创株式会社 电感耦合等离子体处理装置
JP2003234338A (ja) * 2002-02-08 2003-08-22 Tokyo Electron Ltd 誘導結合プラズマ処理装置
US20030218427A1 (en) * 2002-05-22 2003-11-27 Applied Materials, Inc. Capacitively coupled plasma reactor with magnetic plasma control
JP2004356511A (ja) * 2003-05-30 2004-12-16 Tokyo Electron Ltd プラズマ処理装置
CN101076220A (zh) * 2006-05-18 2007-11-21 东京毅力科创株式会社 电感耦合等离子体处理装置和等离子体处理方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113301701A (zh) * 2020-02-21 2021-08-24 东京毅力科创株式会社 天线段和电感耦合等离子体处理装置

Also Published As

Publication number Publication date
TWI475931B (zh) 2015-03-01
TW201008400A (en) 2010-02-16
CN101583234A (zh) 2009-11-18
JP5551343B2 (ja) 2014-07-16
KR20090118839A (ko) 2009-11-18
KR101124754B1 (ko) 2012-03-23
JP2009277859A (ja) 2009-11-26
KR20110010657A (ko) 2011-02-01
KR101446378B1 (ko) 2014-10-01

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Application publication date: 20121010

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