CN102723282B - 芯片正装双面三维线路先蚀后封制造方法及其封装结构 - Google Patents
芯片正装双面三维线路先蚀后封制造方法及其封装结构 Download PDFInfo
- Publication number
- CN102723282B CN102723282B CN2012101898925A CN201210189892A CN102723282B CN 102723282 B CN102723282 B CN 102723282B CN 2012101898925 A CN2012101898925 A CN 2012101898925A CN 201210189892 A CN201210189892 A CN 201210189892A CN 102723282 B CN102723282 B CN 102723282B
- Authority
- CN
- China
- Prior art keywords
- metal substrate
- metal
- green lacquer
- back side
- lining
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 238000004806 packaging method and process Methods 0.000 title abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 372
- 239000002184 metal Substances 0.000 claims abstract description 372
- 239000000758 substrate Substances 0.000 claims abstract description 222
- 239000000463 material Substances 0.000 claims abstract description 79
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 66
- 229910052802 copper Inorganic materials 0.000 claims abstract description 54
- 239000010949 copper Substances 0.000 claims abstract description 54
- 238000007747 plating Methods 0.000 claims abstract description 30
- 238000000576 coating method Methods 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 29
- 238000001465 metallisation Methods 0.000 claims abstract description 28
- 239000011248 coating agent Substances 0.000 claims abstract description 23
- 238000005520 cutting process Methods 0.000 claims abstract description 22
- 238000009713 electroplating Methods 0.000 claims abstract description 18
- 238000003486 chemical etching Methods 0.000 claims abstract description 14
- 238000010079 rubber tapping Methods 0.000 claims abstract description 13
- 238000004140 cleaning Methods 0.000 claims abstract description 11
- 239000004922 lacquer Substances 0.000 claims description 165
- 239000010410 layer Substances 0.000 claims description 145
- 238000003384 imaging method Methods 0.000 claims description 36
- 238000002203 pretreatment Methods 0.000 claims description 26
- 239000005022 packaging material Substances 0.000 claims description 15
- 239000004033 plastic Substances 0.000 claims description 15
- 239000002356 single layer Substances 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 14
- 230000003068 static effect Effects 0.000 claims description 14
- 230000003647 oxidation Effects 0.000 claims description 8
- 238000007254 oxidation reaction Methods 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 7
- 229910003460 diamond Inorganic materials 0.000 claims description 5
- 239000010432 diamond Substances 0.000 claims description 5
- 239000012467 final product Substances 0.000 claims description 5
- 239000000047 product Substances 0.000 claims description 5
- 238000007789 sealing Methods 0.000 claims description 5
- 239000011265 semifinished product Substances 0.000 claims description 5
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000007781 pre-processing Methods 0.000 abstract description 2
- 239000003973 paint Substances 0.000 abstract 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 24
- 238000007772 electroless plating Methods 0.000 description 24
- ZBTDWLVGWJNPQM-UHFFFAOYSA-N [Ni].[Cu].[Au] Chemical compound [Ni].[Cu].[Au] ZBTDWLVGWJNPQM-UHFFFAOYSA-N 0.000 description 15
- 239000003365 glass fiber Substances 0.000 description 14
- 239000011889 copper foil Substances 0.000 description 12
- 229910052759 nickel Inorganic materials 0.000 description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 9
- 229910052737 gold Inorganic materials 0.000 description 9
- 239000010931 gold Substances 0.000 description 9
- 238000007639 printing Methods 0.000 description 9
- 238000011112 process operation Methods 0.000 description 9
- 239000011521 glass Substances 0.000 description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- UIFOTCALDQIDTI-UHFFFAOYSA-N arsanylidynenickel Chemical compound [As]#[Ni] UIFOTCALDQIDTI-UHFFFAOYSA-N 0.000 description 6
- 239000003822 epoxy resin Substances 0.000 description 6
- 238000007654 immersion Methods 0.000 description 6
- 239000007943 implant Substances 0.000 description 6
- 229920000647 polyepoxide Polymers 0.000 description 6
- -1 porpezite Chemical compound 0.000 description 6
- 239000007921 spray Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 229910000863 Ferronickel Inorganic materials 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910001128 Sn alloy Inorganic materials 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000000149 argon plasma sintering Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 3
- 239000006071 cream Substances 0.000 description 3
- 230000029087 digestion Effects 0.000 description 3
- 239000003814 drug Substances 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 description 3
- KFZAUHNPPZCSCR-UHFFFAOYSA-N iron zinc Chemical compound [Fe].[Zn] KFZAUHNPPZCSCR-UHFFFAOYSA-N 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 238000007704 wet chemistry method Methods 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000003912 environmental pollution Methods 0.000 description 2
- 239000011152 fibreglass Substances 0.000 description 2
- 238000005187 foaming Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
Description
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2012101898925A CN102723282B (zh) | 2012-06-09 | 2012-06-09 | 芯片正装双面三维线路先蚀后封制造方法及其封装结构 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2012101898925A CN102723282B (zh) | 2012-06-09 | 2012-06-09 | 芯片正装双面三维线路先蚀后封制造方法及其封装结构 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102723282A CN102723282A (zh) | 2012-10-10 |
CN102723282B true CN102723282B (zh) | 2013-10-09 |
Family
ID=46949006
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2012101898925A Active CN102723282B (zh) | 2012-06-09 | 2012-06-09 | 芯片正装双面三维线路先蚀后封制造方法及其封装结构 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN102723282B (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103413766B (zh) * | 2013-08-06 | 2016-08-10 | 江阴芯智联电子科技有限公司 | 先蚀后封芯片正装三维系统级金属线路板结构及工艺方法 |
CN103400773B (zh) * | 2013-08-06 | 2016-06-08 | 江阴芯智联电子科技有限公司 | 先封后蚀无源器件三维系统级金属线路板结构及工艺方法 |
CN103400767B (zh) * | 2013-08-06 | 2016-08-17 | 江阴芯智联电子科技有限公司 | 先蚀后封芯片倒装凸点三维系统级金属线路板及工艺方法 |
CN103456645B (zh) | 2013-08-06 | 2016-06-01 | 江阴芯智联电子科技有限公司 | 先蚀后封三维系统级芯片正装堆叠封装结构及工艺方法 |
CN103400771B (zh) * | 2013-08-06 | 2016-06-29 | 江阴芯智联电子科技有限公司 | 先蚀后封芯片倒装三维系统级金属线路板结构及工艺方法 |
CN116895573B (zh) * | 2023-07-21 | 2024-03-05 | 鑫祥微电子(南通)有限公司 | 一种免焊线芯片封装设备及其封装方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1053293C (zh) * | 1997-02-05 | 2000-06-07 | 华通电脑股份有限公司 | 球阵式集成电路封装方法及封装件 |
CN1059982C (zh) * | 1997-08-28 | 2000-12-27 | 华通电脑股份有限公司 | 制造集成电路封装电路板的方法 |
CN1265447C (zh) * | 2003-04-09 | 2006-07-19 | 全懋精密科技股份有限公司 | 半导体封装基板的电性连接垫电镀金属层的制造方法 |
CN100372103C (zh) * | 2004-04-21 | 2008-02-27 | 美龙翔微电子科技(深圳)有限公司 | 倒装球栅阵列封装基板及其制作工艺 |
CN101299413B (zh) * | 2008-06-20 | 2011-03-09 | 日月光半导体制造股份有限公司 | 线路板制造工艺 |
CN101840901B (zh) * | 2010-04-30 | 2011-10-05 | 江苏长电科技股份有限公司 | 无基岛静电释放圈引线框结构及其生产方法 |
CN102005432B (zh) * | 2010-09-30 | 2012-03-28 | 江苏长电科技股份有限公司 | 四面无引脚封装结构及其封装方法 |
-
2012
- 2012-06-09 CN CN2012101898925A patent/CN102723282B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN102723282A (zh) | 2012-10-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102723293B (zh) | 芯片倒装单面三维线路先蚀后封制造方法及其封装结构 | |
CN102723280B (zh) | 单面三维线路芯片倒装先蚀后封制造方法 | |
CN102723282B (zh) | 芯片正装双面三维线路先蚀后封制造方法及其封装结构 | |
CN102723284B (zh) | 芯片正装单面三维线路先蚀后封制造方法及其封装结构 | |
CN102723289B (zh) | 芯片正装单面三维线路先封后蚀制造方法及其封装结构 | |
CN102723288B (zh) | 芯片倒装单面三维线路先封后蚀制造方法及其封装结构 | |
CN102856212A (zh) | 双面三维线路芯片倒装先封后蚀制造方法及其封装结构 | |
CN102723287B (zh) | 双面三维线路芯片正装先封后蚀制造方法及其封装结构 | |
CN102723285B (zh) | 单面三维线路芯片正装先蚀后封制造方法及其封装结构 | |
CN102723290B (zh) | 单面三维线路芯片正装先封后蚀制造方法及其封装结构 | |
CN102723283B (zh) | 双面三维线路芯片正装先蚀后封制造方法及其封装结构 | |
CN102856291B (zh) | 多芯片正装先蚀刻后封装无基岛封装结构及其制造方法 | |
CN102723292B (zh) | 芯片倒装双面三维线路先蚀后封制造方法及其封装结构 | |
CN102723291B (zh) | 双面三维线路芯片倒装先蚀后封制造方法及其封装结构 | |
CN102760668B (zh) | 单面三维线路芯片倒装先封后蚀制造方法 | |
CN102867791A (zh) | 多芯片倒装先蚀刻后封装基岛埋入封装结构及其制造方法 | |
CN102723286B (zh) | 芯片正装双面三维线路先封后蚀制造方法及其封装结构 | |
CN102856283A (zh) | 单芯片正装先封装后蚀刻基岛埋入封装结构及其制造方法 | |
CN102856286B (zh) | 单芯片正装先封装后蚀刻无基岛封装结构及其制造方法 | |
CN102856293B (zh) | 单芯片正装先蚀刻后封装无基岛封装结构及其制造方法 | |
CN102856287A (zh) | 多芯片正装先封装后蚀刻基岛露出封装结构及其制造方法 | |
CN102856268B (zh) | 多芯片正装先封装后蚀刻无基岛封装结构及其制造方法 | |
CN102723281B (zh) | 芯片倒装双面三维线路先封后蚀制造方法及其封装结构 | |
CN102881671B (zh) | 单芯片正装先蚀刻后封装基岛露出封装结构及其制造方法 | |
CN102856290A (zh) | 单芯片倒装先蚀刻后封装基岛埋入封装结构及其制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20170323 Address after: The 200127 Tianjin Tianjin FTA test area (Dongjiang Bonded Port) No. 6865 North Road, 1-1-1802-7 financial and trade center of Asia Patentee after: Xin Xin finance leasing (Tianjin) Co., Ltd. Address before: 214434 Binjiang Middle Road, Jiangyin Development Zone, Jiangsu, China, No. 275, No. Patentee before: Jiangsu Changjiang Electronics Technology Co., Ltd. |
|
EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20121010 Assignee: Jiangsu Changjiang Electronics Technology Co., Ltd. Assignor: Xin Xin finance leasing (Tianjin) Co., Ltd. Contract record no.: 2017320010028 Denomination of invention: Etching-first and packaging-later manufacturing method for chip formal double-surface three-dimensional circuit and packaging structure of chip formal double-surface three-dimensional circuit Granted publication date: 20131009 License type: Exclusive License Record date: 20170508 |
|
EE01 | Entry into force of recordation of patent licensing contract | ||
EC01 | Cancellation of recordation of patent licensing contract |
Assignee: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY Co.,Ltd. Assignor: Xin Xin finance leasing (Tianjin) Co., Ltd. Contract record no.: 2017320010028 Date of cancellation: 20200515 |
|
EC01 | Cancellation of recordation of patent licensing contract | ||
TR01 | Transfer of patent right |
Effective date of registration: 20200608 Address after: 214434, No. 78, mayor road, Chengjiang, Jiangsu, Jiangyin, Wuxi Patentee after: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY Co.,Ltd. Address before: 1-1-1802-7, North Zone, financial and Trade Center, No. 6865, Asia Road, Tianjin pilot free trade zone (Dongjiang Free Trade Port Area), Tianjin Patentee before: Xin Xin finance leasing (Tianjin) Co.,Ltd. |
|
TR01 | Transfer of patent right |