CN102709646A - Aluminum oxide ceramic substrate 1W 13dB attenuation sheet - Google Patents
Aluminum oxide ceramic substrate 1W 13dB attenuation sheet Download PDFInfo
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- CN102709646A CN102709646A CN2012102165989A CN201210216598A CN102709646A CN 102709646 A CN102709646 A CN 102709646A CN 2012102165989 A CN2012102165989 A CN 2012102165989A CN 201210216598 A CN201210216598 A CN 201210216598A CN 102709646 A CN102709646 A CN 102709646A
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Abstract
The invention discloses an aluminum oxide ceramic substrate 1W 13dB attenuation sheet which comprises a 2*3.5*0.635MM aluminum oxide substrate, wherein the back surface of the aluminum oxide substrate is printed with a back conducting layer, the front surface of the aluminum oxide substrate is printed with conductors and film resistors, and the conductors connect the film resistors to form a T-type attenuation circuit. The production of the attenuation sheet adopts high-temperature ceramic and paste co-sintering technology, so that the ceramic is metallized to generate circuit properties, thereby lowering the possible destructive influence of multiple-sintering on the product and reducing the failure risk in use. The attenuation sheet fully considers the performance indexes in the aspect of design, including resistance value precision, standing wave ratio and product power, and extends the series product line of 1W fixed film resistor-type attenuation sheets.
Description
Technical field
The present invention relates to a kind of aluminium oxide ceramics attenuator, the attenuator of 1 watt of 13dB of particularly a kind of aluminium oxide ceramic substrate.
Background technology
The attenuator of at present integrated three membranaceous resistive arrangement is widely used in apparatus field such as Aeronautics and Astronautics, radar, radio station, broadcast communication.The working load sheet can only merely consume the power of absorbing redundant; Analyze and use attenuator can also extract the signal that needs simultaneously at the power that absorbs reverse input; And on high-frequency circuit, adjust power level, and decouple, relevant device has been played protective effect.
Since more Zao with manufacturing abroad than domestic starting to the research and development of like product, the status of on product line still is product performance, all having the advantage.Existing attenuator attenuation accuracy is low on the domestic market simultaneously, and employable frequency range relative narrower.The attenuator that we hope is a power consumption component, can not be influential to two terminal circuits, that is to say, and all mate with two terminal circuits.When attenuation accuracy or VSWR do not reach when requiring, the signal that output obtains does not meet actual requirement.
Summary of the invention
Deficiency to above-mentioned prior art; The technical problem that the present invention will solve provides a kind of impedance and satisfies 50 ± 1.5 Ω; Is 13 ± 0.8dB in the 3G frequency range with interior attenuation accuracy, and standing wave requires input, output in 1.2, can satisfy 1 watt of 13dB attenuator of power aluminium oxide ceramic substrate of the application requirements of present 3G network; Replace external like product, and on characteristic, fill up the blank of home products.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
1 watt of 13dB attenuator of a kind of aluminium oxide ceramic substrate; It comprises the aluminum oxide substrate of a 2*3.5*0.635MM; The back up of said aluminum oxide substrate has back of the body conducting shell; The front of said aluminum oxide substrate is printed with lead and membranaceous resistance, and said lead connects said membranaceous resistance and is connected to form T type attenuator circuit.This attenuator adopts refractory ceramics and slurry burning technology altogether aborning, make ceramic metallization and produce circuit performance, has reduced repeatedly the damaging influence that sintering possibly produce product, reduces the risk that breaks down in using.
Preferably, be printed with high temperature sintering resistance protection film on the said membranaceous resistance.
Preferably, the upper surface of said lead and glass protection film also is printed with the blue diaphragm of one deck epoxy resin.
Preferably, said attenuator circuit is along the center line symmetry of said aluminum oxide substrate.
Technique scheme has following beneficial effect: 1 watt of 13dB attenuator of this aluminium oxide ceramic substrate adopts refractory ceramics and slurry burning technology altogether; Make ceramic metallization and produce circuit performance; Reduced repeatedly sintering and possibly reduce the risk that breaks down in using the damaging influence of product generation.
Attenuator circuit is in a state of symmetry fully, and the stability of circuit gets a promotion, and has broken the situation that original attenuator can only be applied to low frequency, makes attenuator can be applied to the network of 2G-3G.Can be widely used in the production of microwave products such as apparatus field isolator, circulator such as Aeronautics and Astronautics, radar, radio station, broadcast communication.
Above-mentioned explanation only is the general introduction of technical scheme of the present invention, understands technological means of the present invention in order can more to know, and can implement according to the content of specification, below with preferred embodiment of the present invention and conjunction with figs. specify as after.Embodiment of the present invention is provided by following examples and accompanying drawing thereof in detail.
Description of drawings
Fig. 1 is the structural representation of the embodiment of the invention.
Embodiment
Below in conjunction with accompanying drawing the preferred embodiments of the present invention are described in detail.
As shown in Figure 1; 1 watt of 13dB attenuator of this aluminium oxide ceramic substrate comprises that one is of a size of the aluminum oxide substrate 1 of 2*3.5*0.635MM; The back up of aluminum oxide substrate 1 has back of the body conducting shell, and the front of aluminum oxide substrate 1 is printed with lead 2 and membranaceous resistance R 1, R2, R3, and membranaceous resistance R 1, R2, R3 are connected to form attenuator circuit through lead; Attenuator circuit is electrically connected with back of the body conducting shell through the silver slurry, thereby makes the attenuator circuit earth-continuity.This attenuator circuit is along the center line symmetry of aluminum oxide substrate; Membranaceous resistance R 1, R2, the last glass protection film 3 that is printed with of R3; The upper surface of lead 2 and high temperature sintering resistance protection film 3 also is printed with the blue diaphragm 4 of one deck epoxy resin, can form protection to lead 2 and membranaceous resistance R 1, R2, R3 like this.
It is 50 ± 1.5 Ω that 1 watt of 13dB attenuator of this aluminium oxide ceramic substrate requires the impedance of input and ground connection, and the impedance of output and ground is 50 ± 1.5 Ω.Signal input part gets into attenuator, through the progressively absorption to power of membranaceous resistance R 1, R3, R2, exports actual needed signal from output.
1 watt of 13dB attenuator of this aluminium oxide ceramic substrate adopts refractory ceramics and slurry burning technology altogether, make ceramic metallization and produce circuit performance, has reduced repeatedly the damaging influence that sintering possibly produce product, reduces the risk that breaks down in the use.
Attenuator circuit is in a state of symmetry fully, and the stability of circuit gets a promotion, and has broken the situation that original attenuator can only be applied to low frequency, makes attenuator can be applied to the network of 2G-3G.Can be widely used in the production of microwave products such as apparatus field isolator, circulator such as Aeronautics and Astronautics, radar, radio station, broadcast communication.
More than 1 watt of 13dB attenuator of a kind of aluminium oxide ceramic substrate that the embodiment of the invention provided has been carried out detailed introduction; For one of ordinary skill in the art; According to the thought of the embodiment of the invention, the part that on embodiment and range of application, all can change, in sum; This description should not be construed as limitation of the present invention, and all any changes of making according to design philosophy of the present invention are all within protection scope of the present invention.
Claims (4)
1. 1 watt of 13dB attenuator of an aluminium oxide ceramic substrate; It is characterized in that: it comprises that one is of a size of the aluminum oxide substrate of 2*3.5*0.635MM; The back up of said aluminum oxide substrate has back of the body conducting shell; The front of said aluminum oxide substrate is printed with lead and membranaceous resistance, and said lead connects said membranaceous resistance and is connected to form T type attenuator circuit.This attenuator adopts refractory ceramics and slurry burning technology altogether aborning, make ceramic metallization and produce circuit performance, has reduced repeatedly the damaging influence that sintering possibly produce product, reduces the risk that breaks down in using.
2. 1 watt of 13dB attenuator of aluminium oxide ceramic substrate according to claim 1 is characterized in that: be printed with high temperature sintering resistance protection film on the said membranaceous resistance.
3. 1 watt of 13dB attenuator of aluminium oxide ceramic substrate according to claim 1 is characterized in that: the upper surface of said lead and glass protection film also is printed with the blue diaphragm of one deck epoxy resin.
4. 1 watt of 13dB attenuator of aluminium oxide ceramic substrate according to claim 1 is characterized in that: said attenuator circuit is along the center line symmetry of said aluminum oxide substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102165989A CN102709646A (en) | 2012-06-28 | 2012-06-28 | Aluminum oxide ceramic substrate 1W 13dB attenuation sheet |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102165989A CN102709646A (en) | 2012-06-28 | 2012-06-28 | Aluminum oxide ceramic substrate 1W 13dB attenuation sheet |
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| CN102709646A true CN102709646A (en) | 2012-10-03 |
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| CN2012102165989A Pending CN102709646A (en) | 2012-06-28 | 2012-06-28 | Aluminum oxide ceramic substrate 1W 13dB attenuation sheet |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101901771A (en) * | 2010-06-01 | 2010-12-01 | 江苏省宜兴电子器件总厂 | Technology for combining external lead wire with ceramic base of ceramic small outline shell |
| CN102361127A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | SMT (Surface Mount Technology) type load sheet (30W) using alumina ceramic substrate |
| CN102361134A (en) * | 2011-09-16 | 2012-02-22 | 苏州市新诚氏电子有限公司 | 30W-10dB attenuation plate of aluminium nitride ceramic substrate |
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2012
- 2012-06-28 CN CN2012102165989A patent/CN102709646A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101901771A (en) * | 2010-06-01 | 2010-12-01 | 江苏省宜兴电子器件总厂 | Technology for combining external lead wire with ceramic base of ceramic small outline shell |
| CN102361127A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | SMT (Surface Mount Technology) type load sheet (30W) using alumina ceramic substrate |
| CN102361134A (en) * | 2011-09-16 | 2012-02-22 | 苏州市新诚氏电子有限公司 | 30W-10dB attenuation plate of aluminium nitride ceramic substrate |
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Application publication date: 20121003 |