CN102656700A - 纳米线隧道二极管及其制造方法 - Google Patents

纳米线隧道二极管及其制造方法 Download PDF

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Publication number
CN102656700A
CN102656700A CN2010800588460A CN201080058846A CN102656700A CN 102656700 A CN102656700 A CN 102656700A CN 2010800588460 A CN2010800588460 A CN 2010800588460A CN 201080058846 A CN201080058846 A CN 201080058846A CN 102656700 A CN102656700 A CN 102656700A
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China
Prior art keywords
tunnel diode
section
doped semiconductor
nano wire
heterojunction
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CN2010800588460A
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English (en)
Chinese (zh)
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M.博格斯特雷姆
M.赫尔林
S.费尔特
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Sol Voltaics AB
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Sol Voltaics AB
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Publication of CN102656700A publication Critical patent/CN102656700A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/70—Tunnel-effect diodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/122—Nanowire, nanosheet or nanotube semiconductor bodies oriented at angles to substrates, e.g. perpendicular to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/123—Nanowire, nanosheet or nanotube semiconductor bodies comprising junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/70—Tunnel-effect diodes
    • H10D8/75—Tunnel-effect PN diodes, e.g. Esaki diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1276—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising growth substrates not made of Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • H10F77/1437—Quantum wires or nanorods
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Bipolar Transistors (AREA)
CN2010800588460A 2009-10-22 2010-10-22 纳米线隧道二极管及其制造方法 Pending CN102656700A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SE0950781-5 2009-10-22
SE0950781 2009-10-22
PCT/SE2010/051147 WO2011049529A1 (en) 2009-10-22 2010-10-22 Nanowire tunnel diode and method for making the same

Publications (1)

Publication Number Publication Date
CN102656700A true CN102656700A (zh) 2012-09-05

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Family Applications (1)

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CN2010800588460A Pending CN102656700A (zh) 2009-10-22 2010-10-22 纳米线隧道二极管及其制造方法

Country Status (6)

Country Link
US (1) US20120199187A1 (https=)
EP (1) EP2491595A4 (https=)
JP (1) JP2013508966A (https=)
KR (1) KR20120099441A (https=)
CN (1) CN102656700A (https=)
WO (1) WO2011049529A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107768426A (zh) * 2012-09-27 2018-03-06 英特尔公司 包含具有低带隙包覆层的沟道区的非平面半导体器件
CN111162141A (zh) * 2019-12-20 2020-05-15 燕山大学 一种多结纳米线太阳能电池的制备方法
CN116031297A (zh) * 2022-12-23 2023-04-28 中芯越州集成电路制造(绍兴)有限公司 一种异质结双极型晶体管及其制作方法

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US20120006390A1 (en) * 2009-12-08 2012-01-12 Yijie Huo Nano-wire solar cell or detector
JP6290199B2 (ja) * 2012-07-06 2018-03-07 クナノ・アーベー 径方向ナノワイヤエサキダイオードデバイスおよび方法
US8937294B2 (en) * 2013-03-15 2015-01-20 Rohm And Haas Electronic Materials Llc Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same
GB2517186A (en) * 2013-08-14 2015-02-18 Norwegian University Of Science And Technology Radial P-N junction nanowire solar cells
KR102149331B1 (ko) 2013-08-30 2020-08-28 삼성전자주식회사 와이어 구조체와 이를 구비하는 반도체 소자 및 와이어 구조체의 제조방법
US20150187889A1 (en) * 2013-12-27 2015-07-02 University Of Rochester Surface-controlled semiconductor nano-devices, methods and applications
JP6874572B2 (ja) * 2017-07-07 2021-05-19 富士通株式会社 電子デバイス、及び電子デバイスの製造方法
JP6954184B2 (ja) * 2018-03-01 2021-10-27 富士通株式会社 半導体デバイス、受信機及び半導体デバイスの製造方法
JP7103027B2 (ja) * 2018-07-30 2022-07-20 富士通株式会社 化合物半導体装置、化合物半導体装置の製造方法、発電装置及び電源装置
JP7211201B2 (ja) * 2019-03-27 2023-01-24 富士通株式会社 化合物半導体装置及びその製造方法、検波器
JP7265138B2 (ja) * 2019-04-26 2023-04-26 富士通株式会社 半導体デバイス、コンピュータ、及び半導体デバイスの製造方法
CN115428166B (zh) 2020-04-15 2026-04-14 富士通株式会社 半导体装置、储层计算系统以及半导体装置的制造方法

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CN1826694A (zh) * 2003-04-04 2006-08-30 斯塔特斯科特22286公司 具有pn结的纳米须及其制造方法
CN101221993A (zh) * 2007-01-11 2008-07-16 通用电气公司 纳米壁太阳能电池和光电子器件
WO2008156421A2 (en) * 2007-06-19 2008-12-24 Qunano Ab Nanowire-based solar cell structure

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US4667059A (en) * 1985-10-22 1987-05-19 The United States Of America As Represented By The United States Department Of Energy Current and lattice matched tandem solar cell
US6660928B1 (en) * 2002-04-02 2003-12-09 Essential Research, Inc. Multi-junction photovoltaic cell
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WO2005001900A2 (en) * 2003-06-12 2005-01-06 Sirica Corporation Steady-state-non-equilibrium distribution of free carriers and photon energy up-conversion using same
CN101443265B (zh) 2006-03-08 2014-03-26 昆南诺股份有限公司 在硅上无金属合成外延半导体纳米线的方法
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US8242353B2 (en) * 2009-03-16 2012-08-14 International Business Machines Corporation Nanowire multijunction solar cell

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CN1826694A (zh) * 2003-04-04 2006-08-30 斯塔特斯科特22286公司 具有pn结的纳米须及其制造方法
CN101221993A (zh) * 2007-01-11 2008-07-16 通用电气公司 纳米壁太阳能电池和光电子器件
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107768426A (zh) * 2012-09-27 2018-03-06 英特尔公司 包含具有低带隙包覆层的沟道区的非平面半导体器件
CN107768426B (zh) * 2012-09-27 2021-06-08 英特尔公司 包含具有低带隙包覆层的沟道区的非平面半导体器件
CN111162141A (zh) * 2019-12-20 2020-05-15 燕山大学 一种多结纳米线太阳能电池的制备方法
CN116031297A (zh) * 2022-12-23 2023-04-28 中芯越州集成电路制造(绍兴)有限公司 一种异质结双极型晶体管及其制作方法

Also Published As

Publication number Publication date
JP2013508966A (ja) 2013-03-07
KR20120099441A (ko) 2012-09-10
EP2491595A1 (en) 2012-08-29
EP2491595A4 (en) 2014-03-19
WO2011049529A1 (en) 2011-04-28
US20120199187A1 (en) 2012-08-09

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