CN102656681A - 高温卡盘及其使用方法 - Google Patents
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Abstract
本发明提供了通过至少一个屏蔽部件改善晶片支撑卡盘对于由温度造成的退化或变形的抵抗性能的方法,该屏蔽部件通过物理屏蔽和/或热屏蔽卡盘部件以使其免受高温处理流体的影响。
Description
技术领域
本发明涉及用于诸如半导体晶片等晶片状物体的支承物,其适于在高温晶片的表面处理过程中使用。
背景技术
半导体晶片经历诸如刻蚀、清洁、抛光和材料淀积等各种表面处理过程。为了适应这些过程,单个晶片可以相对于一个或更多处理流体喷嘴由与可转动载架联接的卡盘支承,如美国专利4,903,717和5,513,668所描述的,这两个专利中的每一个都通过引用明确且完整地并入本发明中。所谓的“双面卡盘”相对于位于晶片相对面的处理流体喷嘴支承晶片,如美国专利6,536,454所描述的,通过引用将该专利明确且完整地并入本发明中。
当晶片处理涉及超过大约80℃的流体和/或晶片的处理温度时,本发明人发现惯用的卡盘可能由于诸如卡盘部件的热变形或因与高温腐蚀液接触导致的退化而受损或最终不能使用。之前人们还没有提出适于更好地耐受高温晶片处理的卡盘。
发明内容
本发明涉及适于在高温下使用的新型卡盘及其使用方法。根据本发明,支撑诸如半导体晶片等物体的卡盘包括一个或多个屏蔽部件,该屏蔽部件被配置和定位成降低由于与带有高温处理流体的晶片或其他物体接触而导致的卡盘部件的退化或变形。本发明的卡盘不限于在半导体晶片的流体处理过程中使用,在物体要求被支撑以与一种或者一种以上的处理流体接触的任何表面处理过程中,本发明的卡盘也是有用的,该物体通常但不一定为盘状物。虽然本发明的卡盘特别适用于高温处理过程,但预期也可用于80℃或80℃以下的工艺过程中。
附图说明
在阅读参考附图给出的本发明优选实施方式的下述具体描述后,本发明的其他目的、特点和优点将更明显,其中:
图1为根据本发明所示的卡盘的透视示意图;
图2为图1卡盘的轴向横截面图;以及
图3为图2细节III的放大图。
具体实施方式
在图1中,本发明优选实施方式的卡盘(1)包括基本覆盖卡盘本体的环形屏蔽板(50),将在以下参考图2和3更详细地描述。屏蔽板(50)包括在该板外围区域的间隔基本一致的多个通孔(52),通过通孔(52)相应的销钉(60)(gripping pins)从卡盘本体向上延伸到屏蔽板(50)上方预定高度。围绕每个销钉(60)形成并延伸到屏蔽板(50)外缘的凹槽(56),以便获取从销钉(60)尤其下面讨论的销钉盖(63)流下的流体并向外引流出卡盘(1)。
屏蔽板(50)还包括环绕屏蔽板(50)中心孔的向上延伸的凸缘(55)。优选地,如图2所示,凸缘(55)形成了屏蔽板(50)中心孔的外缘。屏蔽板(50)同心围绕形成在卡盘本体中的通孔(42),下文将参考图2进行更详细的描述。
使用中,销钉(60)可操作地啮合于晶片(未示出)的外缘,以使晶片固定地位于屏蔽板(50)上方的预定距离并平行于屏蔽板(50),且优选位于屏蔽板(50)凸缘(55)上方的预定距离。相应地,可以将包括高温流体在内的一种或多种处理流体配送到远离卡盘(1)的晶片上表面,并且还可选择性地通过通孔(42)将处理液配送到晶片的相反的下表面。卡盘(1)可转动地设置在驱动机构(未示出)上以绕其中心轴可转动,如美国专利4,903,717、5,513,668和6,536,454中所描述的。
屏蔽板(50)基本覆盖了卡盘本体,现在将参考图2和3所描述的本发明的实施方式描述卡盘的的各个部件。
图2中,卡盘(1)包括位于其下部的围绕中心孔的近似环形杯状的基体(20)。基体(20)的每个内部外围和外部外围形成向上延伸的外缘,凭此基体(20)的上表面形成了面朝上的环形凹面。在基体(20)下表面还包括向下延伸的环形脊(22),以便形成位于该环形脊内面朝下的中心凹槽(24)和位于该环形脊径直向外的面朝下的环形凹槽(26)。
具有中心孔的基本呈平面的内基环(15)位于基体(20)面朝下的中心凹槽(24)内,并附于基体(20)。外基环(10)位于基体(20)面朝下的环形凹槽(26)内,并沿着基体(20)的向上延伸的外部外缘向上延伸。外基环(10)附于基体(20)上。
带有中央通孔(42)的基本呈平面的上体部件(40)具有共延伸地(coextensively)覆盖基体(20)的下表面,以便邻接基体(20)内部和外部向上延伸的外缘。由此,上体部件(40)包围了基体(20)面朝上的环形凹面以在其间形成环形空间。
在上体部件(40)外周基本均匀间隔的多个通孔与对应的屏蔽板(50)的多个通孔对齐,以便多个向上延伸的销钉(60)互相容纳。
上体部件(40)在其上部和外部外缘还包括如图3所示向外并向下延伸的凸缘(43)。上体部件(40)优选由聚偏二氟乙烯(PVDF)形成。
如图2所示,内基环(15)和基体(20)的中心孔相互配合对齐以包围中央空间(48),该中央空间(48)与上体部件(40)的通孔(42)相互配合对齐,以形成延伸至卡盘(1)的整个横截面的通道。相应地,非转动喷嘴头(未示出)可以设置在空间(48)内以便能通过通孔(42)将液体和/或气体分配到晶片的下方。
屏蔽板(50)在上体部件(40)上方基本共延伸并覆盖上体部件(40)上表面约大于50%的面积,优选大于约75%至100%的面积,以便使用中屏蔽板(50)将上体部件(40)与高温处理流体进行物理屏蔽或热屏蔽。屏蔽板(50)在其外缘包括向外和向下延伸的凸缘(57),如图3所示凸缘(57)共延伸地覆盖向外和向下延伸的上体部件(40)的凸缘(43)。
屏蔽板(50)和上体部件(40)可以由相同或不同的材料形成。屏蔽板(50)优选由聚偏二氟乙烯(PVDF)形成。
再次参考图2和3描述的本发明的实施方式,屏蔽板(50)维持在上体部件(40)上方预定的一致的距离以便在其中形成间隙(51)。屏蔽板(50)能够以适于提供间隙(51)的任何方式固定到上体部件(40)上。例如,延伸通过屏蔽板(50)中的相应的安装螺孔(52)并进入上体部件(40)上表面的安装螺钉(53,54),可以配备隔离套(41),隔离套(41)的作用是充当屏蔽板(50)和上体部件(40)之间的均匀间隔垫片。如图1所示,优选将这些安装螺钉(53,54)和相关的隔离套(41)以基本等距离间隔设置在卡盘(1)的内外圆周附近。
间隙(51)可以由空气或其他流体填充,在使用期间,间隙(51)将上体部件(40)屏蔽,以免受到高温处理流体的不利的热影响。对应于屏蔽板(50)与上体部件(40)之间的均匀距离的间隙(51)的理想高度,可以根据期望的处理流体温度和屏蔽板(50)的热力学性质确定。间隙(51)优选约为3mm。更优选地,屏蔽板(51)与间隙(51)相互配合地配置,使得使用中,正在处理的晶片温度很高时,例如为120℃或者更高,达到180℃一样高时,上体部分(40)承受的温度也不超过约80℃。
在图2与3中,卡盘(1)还包括位于上体部件(40)与基体(20)之间的环状加强板(30)。特别地,加强板(30)邻近上体部件(40)的下表面,并且可以通过螺丝(46)连接上体部件(40)的下表面上(图1所示)。加强板(30)从基体(20)的向上延伸的内部外缘延伸到基体(20)近似向上延伸的外部外缘,以便与形成在上体部件(40)与基体(20)之间的环形空间基本共延伸。
加强板(30)至少有一部分起作用,以抑制或防止基体(20)和/或上体部件(40)由于高的晶片处理温度引起的变形。相应地,加强板(30)可以由任何热学上和结构上都合适的材料形成,优选由铝形成。
如图3最佳示出的那样,每个销钉(60)包括销钉基体(61),其位于匹配的上体部件(40)的通孔(44)与屏蔽板(50)的通孔(52)中。销钉基体(61)在屏蔽板(50)上方向上延伸预定距离,并在其上端覆盖向外和向下延伸的销钉盖(63)。
位于销钉基体(61)的离心设置的纵向通孔里的销钉杆(62)在销钉盖(63)上方向上延伸预定的距离,并通过凹槽外接于接近其上端的地方,该凹槽被配置用于沿径向和轴向方向接触并固定晶片边缘。销钉杆(62)通过固定螺丝(64)固定在销钉基体(61)的通孔内。销钉杆(62)优选由陶瓷或蓝宝石构成。
销钉基体(61)的下端由位于形成于上体部件(40)中的匹配肩台内的扩大直径的销钉齿轮部件(74)形成。滚针轴承(77)与关联的螺旋弹簧(76)将每个销钉基体向上朝向上体部件(40)驱动,每个滚针轴承(77)与关联的螺旋弹簧(76)位于形成在基体(20)的外部的向上延伸的外缘内的凹槽中。
销钉盖(63)引导可能会冲击销钉基体(61)的任何流体向外并远离销钉(60)流向屏蔽板(50)中的凹槽(56),从而保护销钉基体(61)和销钉齿轮部件(64)免受处理流体的破坏。此外,屏蔽板(50)包括围绕每个销钉(60),并从屏蔽板(50)的顶表面延伸到销钉盖(63)的底表面的环形凸缘(58),从而进一步使销钉(60)物理屏蔽及热屏蔽温度升高的处理流体。
基本呈平面的齿轮环(70)位于上体部件(40)与基体(20)之间的环形空间内。齿轮环(70)在其外边缘包括径向向外延伸的齿,这些齿与销钉齿轮部件(74)径向向外延伸的对应齿啮合。齿轮环(70)在其内边缘通过滚珠轴承(72)可转动地靠着基体(20)内部向上延伸的外缘。
齿轮环(70)被配置并被定位以便相对于基体(20)是可转动的,使得齿轮环(70)转动时,销钉齿轮部件(74)绕其中心轴转动。继而每个离心设置的销钉杆(62)在释放晶片的外部“打开”位置与销钉(60)径向且轴向固定晶片的内部“关闭”位置之间转动。用于提供齿轮和卡盘本体的相对运动以便定位销钉离心转动的机制是公知的,这在例如美国专利4,903,717和5,513,668中有描述。
普通技术人员在阅读本说明书时会显而易见的发现,本发明的卡盘提供了多个屏蔽部件,每个屏蔽部件能够降低由于接触带有高温处理流体晶片或其他物体而导致的卡盘部件的退化或变形。虽然本发明已经结合一些优选实施方式进行了描述,但应该了解到,所提供的实施方式仅仅用于阐述本发明,而不应成为限制由所附权利要求的真实范围和主旨所确定的保护范围的借口。
Claims (15)
1.用于支撑晶片状物体的卡盘,其包括:
本体,适于在操作期间按预定方向设置晶片状物体,所述本体包括上表面和相对所述上表面向上延伸的多个销钉,所述销钉配置成用于啮合晶片状物体的边缘或表面;及
至少一个屏蔽部件,其设置在所述本体的所述上表面的至少一个和所述上表面的向上定位的所述销钉中的所述至少一个的部分的上面。
2.如权利要求1所述的卡盘,其中所述本体是一个可转动的支撑物,其适于在半导体晶片的单个晶片湿处理过程中使用。
3.如权利要求1所述的卡盘,其中所述至少一个屏蔽部件包括大体设置在所述本体的所述上表面上并且维持在所述本体的所述上表面上方预定距离以在其间形成间隙的屏蔽板。
4.如权利要求1所述的卡盘,其中所述至少一个屏蔽部件包括具有多个通孔的屏蔽板,所述销钉中的每一个延伸通过所述多个通孔中的一个,所述屏蔽板进一步包括围绕每个所述通孔并配置为采集处理流体并引导处理流体径向向外离开所述本体的凹槽。
5.如权利要求4所述的卡盘,其中所述屏蔽板还包括围绕所述多个销钉中的每个的环状凸缘。
6.如权利要求4所述的卡盘,其中所述屏蔽板还包括中央开口和围绕所述中央开口向上延伸的环状凸缘。
7.如权利要求1所述的卡盘,还包括设置在所述本体的上体部件下方的金属加固部件。
8.如权利要求1所述的卡盘,其中所述至少一个屏蔽部件包括一个或多个销钉盖。
9.如权利要求8所述的卡盘,其中每个所述销钉盖覆于销钉本体之上,并定义了销钉杆通过的开口,所述销钉盖相对所述销钉基体的纵向轴,径向地向外并向下延伸。
10.如权利要求4所述的卡盘,其中所述至少一个屏蔽部件还包括一个或多个销钉盖。
11.如权利要求10所述的卡盘,其中每个所述销钉盖覆于销钉本体之上,并定义了让销钉杆通过的开口,所述销钉盖相对所述销钉基体的纵向轴,径向地向外并向下延伸,并相对于所述凹槽设置,以便将来自于所述销钉盖的上表面的处理流体引导到下面的凹槽。
12.用于湿处理晶片状物体的方法,其包括:
将晶片状物体以预定的方向设置在卡盘上,所述卡盘包括本体和从所述本体向上延伸的多个销钉,所述销钉用于啮合晶片状物体的边缘或表面;
将处理液配制到所述晶片状物体上,以便所述晶片状物体的温度大大高于80℃;及
将所述本体及所述销钉中的至少一个的温度维持在80℃或80℃以下。
13.根据权利要求12所述的方法,其中所述晶片状物体的温度达到了120℃或者120℃以上。
14.根据权利要求12所述的方法,其中所述晶片状物体的温度达到120℃至180℃之间。
15.根据权利要求12所述的方法,其中所述卡盘包括至少一个屏蔽部件,该屏蔽部件位于所述主体和所述销钉中的至少一个的上面,并被配置为:当所述屏蔽部件的上表面上每处的温度为120℃或者更高时,将所述本体和所述销钉中的至少一个的温度维持在80℃以下。
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US12/642,101 US8613288B2 (en) | 2009-12-18 | 2009-12-18 | High temperature chuck and method of using same |
US12/642,101 | 2009-12-18 | ||
PCT/IB2010/055552 WO2011073842A2 (en) | 2009-12-18 | 2010-12-02 | High temperature chuck and method of using same |
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CN102656681A true CN102656681A (zh) | 2012-09-05 |
CN102656681B CN102656681B (zh) | 2016-07-06 |
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US (1) | US8613288B2 (zh) |
EP (1) | EP2513963A4 (zh) |
JP (1) | JP5933448B2 (zh) |
KR (1) | KR101770847B1 (zh) |
CN (1) | CN102656681B (zh) |
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TWI765936B (zh) * | 2016-11-29 | 2022-06-01 | 美商東京威力科創Fsi股份有限公司 | 用以對處理腔室中之微電子基板進行處理的平移與旋轉夾頭 |
CN108773627A (zh) * | 2018-07-25 | 2018-11-09 | 宁夏国励汽车动力科技有限公司 | 卡口法兰托架 |
CN117123547A (zh) * | 2023-08-31 | 2023-11-28 | 南通市嘉诚机械有限公司 | 一种轴承加工用清洗装置 |
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Also Published As
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TWI455240B (zh) | 2014-10-01 |
JP2013514654A (ja) | 2013-04-25 |
WO2011073842A2 (en) | 2011-06-23 |
KR101770847B1 (ko) | 2017-08-23 |
JP5933448B2 (ja) | 2016-06-08 |
EP2513963A4 (en) | 2017-03-08 |
WO2011073842A3 (en) | 2011-12-29 |
US20110146728A1 (en) | 2011-06-23 |
US8613288B2 (en) | 2013-12-24 |
CN102656681B (zh) | 2016-07-06 |
KR20120105475A (ko) | 2012-09-25 |
TW201131692A (en) | 2011-09-16 |
EP2513963A2 (en) | 2012-10-24 |
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