CN102655021A - 半导体存储装置以及解码方法 - Google Patents
半导体存储装置以及解码方法 Download PDFInfo
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- CN102655021A CN102655021A CN2011102761342A CN201110276134A CN102655021A CN 102655021 A CN102655021 A CN 102655021A CN 2011102761342 A CN2011102761342 A CN 2011102761342A CN 201110276134 A CN201110276134 A CN 201110276134A CN 102655021 A CN102655021 A CN 102655021A
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
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Application Number | Priority Date | Filing Date | Title |
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JP2011045477A JP2012181761A (ja) | 2011-03-02 | 2011-03-02 | 半導体メモリ装置および復号方法 |
JP2011-045477 | 2011-03-02 |
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CN102655021A true CN102655021A (zh) | 2012-09-05 |
CN102655021B CN102655021B (zh) | 2015-05-06 |
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CN201110276134.2A Active CN102655021B (zh) | 2011-03-02 | 2011-09-16 | 半导体存储装置以及解码方法 |
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US (1) | US8385117B2 (zh) |
JP (1) | JP2012181761A (zh) |
CN (1) | CN102655021B (zh) |
TW (1) | TWI485709B (zh) |
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CN107146638A (zh) * | 2016-03-01 | 2017-09-08 | 群联电子股份有限公司 | 译码方法、内存储存装置及内存控制电路单元 |
CN107507641A (zh) * | 2017-08-31 | 2017-12-22 | 长江存储科技有限责任公司 | 非易失性存储器的读操作方法、装置及相关设备 |
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CN108683423A (zh) * | 2018-05-16 | 2018-10-19 | 广东工业大学 | 一种多级闪存信道下的ldpc码动态串行调度译码算法及装置 |
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CN109979519A (zh) * | 2017-12-27 | 2019-07-05 | 华邦电子股份有限公司 | 存储器完整性的检验方法、非易失性存储器以及电子装置 |
CN110021330A (zh) * | 2018-01-08 | 2019-07-16 | 爱思开海力士有限公司 | 存储器系统及其操作方法 |
CN110739016A (zh) * | 2018-07-19 | 2020-01-31 | 慧荣科技股份有限公司 | 闪存控制器以及用来存取闪存模块的方法 |
Families Citing this family (55)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8848438B2 (en) * | 2010-10-05 | 2014-09-30 | Stec, Inc. | Asymmetric log-likelihood ratio for MLC flash channel |
JP2013080450A (ja) * | 2011-09-22 | 2013-05-02 | Toshiba Corp | メモリ装置 |
US8856611B2 (en) * | 2012-08-04 | 2014-10-07 | Lsi Corporation | Soft-decision compensation for flash channel variation |
US9699263B1 (en) | 2012-08-17 | 2017-07-04 | Sandisk Technologies Llc. | Automatic read and write acceleration of data accessed by virtual machines |
US20140071761A1 (en) * | 2012-09-10 | 2014-03-13 | Sandisk Technologies Inc. | Non-volatile storage with joint hard bit and soft bit reading |
US10468096B2 (en) | 2012-10-15 | 2019-11-05 | Seagate Technology Llc | Accelerated soft read for multi-level cell nonvolatile memories |
US9195533B1 (en) * | 2012-10-19 | 2015-11-24 | Seagate Technology Llc | Addressing variations in bit error rates amongst data storage segments |
US9612948B2 (en) | 2012-12-27 | 2017-04-04 | Sandisk Technologies Llc | Reads and writes between a contiguous data block and noncontiguous sets of logical address blocks in a persistent storage device |
CN104995844B (zh) | 2013-02-14 | 2018-11-30 | 马维尔国际贸易有限公司 | 具有对于ldpc码可靠性输入的比特翻转解码 |
US9329928B2 (en) | 2013-02-20 | 2016-05-03 | Sandisk Enterprise IP LLC. | Bandwidth optimization in a non-volatile memory system |
KR20150128750A (ko) | 2013-03-07 | 2015-11-18 | 마벨 월드 트레이드 리미티드 | 늦은 신뢰도 정보를 사용하여 디코딩하기 위한 시스템 및 방법 |
US10061640B1 (en) * | 2013-03-12 | 2018-08-28 | Western Digital Technologies, Inc. | Soft-decision input generation for data storage systems |
US9870830B1 (en) * | 2013-03-14 | 2018-01-16 | Sandisk Technologies Llc | Optimal multilevel sensing for reading data from a storage medium |
KR102081415B1 (ko) * | 2013-03-15 | 2020-02-25 | 삼성전자주식회사 | 비휘발성 메모리 장치의 llr 최적화 방법 및 비휘발성 메모리 장치의 에러 정정 방법 |
US9323611B2 (en) * | 2013-03-21 | 2016-04-26 | Marvell World Trade Ltd. | Systems and methods for multi-stage soft input decoding |
US9524235B1 (en) | 2013-07-25 | 2016-12-20 | Sandisk Technologies Llc | Local hash value generation in non-volatile data storage systems |
US9639463B1 (en) | 2013-08-26 | 2017-05-02 | Sandisk Technologies Llc | Heuristic aware garbage collection scheme in storage systems |
US9298547B2 (en) * | 2013-11-11 | 2016-03-29 | Seagate Technology Llc | Detection/erasure of random write errors using converged hard decisions |
US9703816B2 (en) | 2013-11-19 | 2017-07-11 | Sandisk Technologies Llc | Method and system for forward reference logging in a persistent datastore |
US9520197B2 (en) | 2013-11-22 | 2016-12-13 | Sandisk Technologies Llc | Adaptive erase of a storage device |
US9520162B2 (en) | 2013-11-27 | 2016-12-13 | Sandisk Technologies Llc | DIMM device controller supervisor |
US9209835B2 (en) * | 2013-11-27 | 2015-12-08 | Seagate Technology Llc | Read retry for non-volatile memories |
US9582058B2 (en) | 2013-11-29 | 2017-02-28 | Sandisk Technologies Llc | Power inrush management of storage devices |
US9798613B2 (en) | 2013-12-27 | 2017-10-24 | Toshiba Memory Corporation | Controller of nonvolatile semiconductor memory |
US9576683B2 (en) * | 2014-02-06 | 2017-02-21 | Seagate Technology Llc | Systems and methods for hard error reduction in a solid state memory device |
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US9626399B2 (en) | 2014-03-31 | 2017-04-18 | Sandisk Technologies Llc | Conditional updates for reducing frequency of data modification operations |
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US10162748B2 (en) | 2014-05-30 | 2018-12-25 | Sandisk Technologies Llc | Prioritizing garbage collection and block allocation based on I/O history for logical address regions |
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US10146483B2 (en) | 2016-02-29 | 2018-12-04 | Toshiba Memory Corporation | Memory system |
US9934847B2 (en) | 2016-03-11 | 2018-04-03 | Toshiba Memory Corporation | Memory system storing 4-bit data in each memory cell and method of controlling thereof including soft bit information |
JP2018005959A (ja) | 2016-06-30 | 2018-01-11 | 東芝メモリ株式会社 | メモリシステムおよび書き込み方法 |
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US10552252B2 (en) | 2016-08-29 | 2020-02-04 | Seagate Technology Llc | Patterned bit in error measurement apparatus and method |
US10297338B2 (en) | 2016-09-20 | 2019-05-21 | Toshiba Memory Corporation | Memory system |
US10222996B2 (en) * | 2017-02-07 | 2019-03-05 | Western Digital Technologies, Inc. | Read operation and soft decoding timing |
CN108461107B (zh) * | 2017-02-21 | 2021-09-28 | 北京忆恒创源科技股份有限公司 | 读阈值跟踪方法与装置 |
JP2019168813A (ja) * | 2018-03-22 | 2019-10-03 | 東芝メモリ株式会社 | メモリシステム |
JP2021149769A (ja) | 2020-03-23 | 2021-09-27 | キオクシア株式会社 | メモリシステムおよびシフトレジスタ型メモリ |
US11528039B2 (en) * | 2021-03-17 | 2022-12-13 | Innogrit Technologies Co., Ltd. | Error recovery using adaptive LLR lookup table |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090103358A1 (en) * | 2006-05-12 | 2009-04-23 | Anobit Technologies Ltd. | Reducing programming error in memory devices |
CN101601094A (zh) * | 2006-10-30 | 2009-12-09 | 爱诺彼得技术有限责任公司 | 使用多个门限读取存储单元的方法 |
US7818653B2 (en) * | 2006-09-28 | 2010-10-19 | Sandisk Corporation | Methods of soft-input soft-output decoding for nonvolatile memory |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7799082B2 (en) * | 2003-08-05 | 2010-09-21 | Flexuspine, Inc. | Artificial functional spinal unit system and method for use |
JP4896605B2 (ja) | 2006-07-04 | 2012-03-14 | 株式会社東芝 | 不揮発性半導体記憶システム |
JP4791912B2 (ja) | 2006-08-31 | 2011-10-12 | 株式会社東芝 | 不揮発性半導体記憶装置及び不揮発性記憶システム |
WO2008053472A2 (en) | 2006-10-30 | 2008-05-08 | Anobit Technologies Ltd. | Reading memory cells using multiple thresholds |
WO2008121577A1 (en) * | 2007-03-31 | 2008-10-09 | Sandisk Corporation | Soft bit data transmission for error correction control in non-volatile memory |
JP4818381B2 (ja) | 2009-03-02 | 2011-11-16 | 株式会社東芝 | 半導体メモリ装置 |
JP5361603B2 (ja) | 2009-08-13 | 2013-12-04 | 株式会社東芝 | コントローラ |
US20110085382A1 (en) * | 2009-10-13 | 2011-04-14 | Aplus Flash Technology, Inc. | Universal dual charge-retaining transistor flash NOR cell, a dual charge-retaining transistor flash NOR cell array, and method for operating same |
KR20110131648A (ko) * | 2010-05-31 | 2011-12-07 | 삼성전자주식회사 | 비휘발성 메모리 장치, 그것을 포함한 메모리 시스템 및 메모리 카드 및 그것의 프로그램 방법 |
KR101666941B1 (ko) * | 2010-07-06 | 2016-10-17 | 삼성전자주식회사 | 비휘발성 메모리 장치와 이를 포함하는 반도체 시스템 |
-
2011
- 2011-03-02 JP JP2011045477A patent/JP2012181761A/ja not_active Withdrawn
- 2011-09-01 TW TW100131566A patent/TWI485709B/zh active
- 2011-09-15 US US13/233,530 patent/US8385117B2/en active Active
- 2011-09-16 CN CN201110276134.2A patent/CN102655021B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090103358A1 (en) * | 2006-05-12 | 2009-04-23 | Anobit Technologies Ltd. | Reducing programming error in memory devices |
US7818653B2 (en) * | 2006-09-28 | 2010-10-19 | Sandisk Corporation | Methods of soft-input soft-output decoding for nonvolatile memory |
CN101601094A (zh) * | 2006-10-30 | 2009-12-09 | 爱诺彼得技术有限责任公司 | 使用多个门限读取存储单元的方法 |
Cited By (36)
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CN103970619B (zh) * | 2013-02-06 | 2017-09-29 | 东芝存储器株式会社 | 控制器 |
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CN108683423A (zh) * | 2018-05-16 | 2018-10-19 | 广东工业大学 | 一种多级闪存信道下的ldpc码动态串行调度译码算法及装置 |
US11256425B2 (en) | 2018-07-19 | 2022-02-22 | Silicon Motion, Inc. | Flash memory controller, flash memory module and associated electronic device |
CN110739016A (zh) * | 2018-07-19 | 2020-01-31 | 慧荣科技股份有限公司 | 闪存控制器以及用来存取闪存模块的方法 |
US11086567B2 (en) | 2018-07-19 | 2021-08-10 | Silicon Motion, Inc. | Flash memory controller, flash memory module and associated electronic device |
US11099781B2 (en) | 2018-07-19 | 2021-08-24 | Silicon Motion, Inc. | Flash memory controller, flash memory module and associated electronic device |
CN110739016B (zh) * | 2018-07-19 | 2021-10-15 | 慧荣科技股份有限公司 | 闪存控制器以及用来存取闪存模块的方法 |
CN110739017A (zh) * | 2018-07-19 | 2020-01-31 | 慧荣科技股份有限公司 | 闪存控制器、闪存模块以及电子装置 |
CN110739017B (zh) * | 2018-07-19 | 2022-03-25 | 慧荣科技股份有限公司 | 闪存控制器、闪存模块以及电子装置 |
US11494086B2 (en) | 2018-07-19 | 2022-11-08 | Silicon Motion, Inc. | Flash memory controller, flash memory module and associated electronic device |
US11494085B2 (en) | 2018-07-19 | 2022-11-08 | Silicon Motion, Inc. | Flash memory controller, flash memory module and associated electronic device |
CN109660263A (zh) * | 2018-11-22 | 2019-04-19 | 华中科技大学 | 一种适用于mlc nan闪存的ldpc码译码方法 |
CN109660263B (zh) * | 2018-11-22 | 2022-07-05 | 华中科技大学 | 一种适用于mlc nand闪存的ldpc码译码方法 |
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US20120224420A1 (en) | 2012-09-06 |
US8385117B2 (en) | 2013-02-26 |
TWI485709B (zh) | 2015-05-21 |
TW201237873A (en) | 2012-09-16 |
JP2012181761A (ja) | 2012-09-20 |
CN102655021B (zh) | 2015-05-06 |
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