CN102650780B - 一种像素结构、液晶显示面板及制作方法 - Google Patents

一种像素结构、液晶显示面板及制作方法 Download PDF

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CN102650780B
CN102650780B CN201110143765.7A CN201110143765A CN102650780B CN 102650780 B CN102650780 B CN 102650780B CN 201110143765 A CN201110143765 A CN 201110143765A CN 102650780 B CN102650780 B CN 102650780B
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惠官宝
崔承镇
周伟峰
张锋
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BOE Technology Group Co Ltd
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Abstract

本发明公开了一种像素结构、液晶显示面板及制作方法，涉及液晶显示领域，用以简化半透半反式液晶显示器阵列基板上像素结构的制作工艺。所述像素结构，包括薄膜晶体管、反射区域及透射区域，所述反射区域包括：有机层、反射层和像素电极，所述透射区域包括：像素电极；所述反射区域的像素电极和所述透射区域的像素电极呈一体结构，且呈一体结构的像素电极与所述薄膜晶体管的栅极相连接；所述反射区域的有机层先于所述薄膜晶体管的栅极制作在阵列基板上；所述反射区域的反射层与所述薄膜晶体管的栅极利用同种金属同层制作完成。本发明提供的方案适用于半透半反式液晶显示器的生产。

Description

一种像素结构、液晶显示面板及制作方法
技术领域
本发明涉及液晶显示领域，尤其涉及一种像素结构、液晶显示面板及制作方法。
背景技术
目前应用比较广泛的TFT-LCD(Thin Film Transistor-Liquid Crystal Display，薄膜晶体管-液晶显示器)大多为全透式液晶显示器，这种液晶显示器在户外太阳光下使用时，对比度较差，造成其显示面板的可读性不佳。为了解决全透式液晶显示器的缺陷，半透半反式液晶显示器应运而生；半透半反式液晶显示器通过增加其显示面板的反光率，来增加液晶显示器在室外显示时的对比度，以使得其显示面板在室外也可以保持优良的可读性。
如图1所示，现有技术中半透半反式TFT-LCD阵列基板001上的像素结构包括：薄膜晶体管的栅极11，栅绝缘层12，有源层13，薄膜晶体管源极14、漏极15，钝化层16，有机层17，像素电极18和反射层19；且该像素结构可以分为三个区域：薄膜晶体管、反射区域及透射区域。图1所示的像素结构的制作方法如下：
步骤1、在阵列基板上制作栅金属薄膜，并通过掩膜光刻工艺形成薄膜晶体管的栅极11及栅线；
步骤2、在完成步骤1的阵列基板上制作氮化硅薄膜，形成栅绝缘层12，并制作半导体薄膜，并通过掩膜光刻工艺形成有源层13；
步骤3、在完成步骤2的阵列基板上制作源漏金属薄膜，并通过掩膜光刻工艺形成薄膜晶体管的源极14、漏极15，以及数据线；
步骤4、在完成步骤3的阵列基板上制作氮化硅薄膜，并通过掩膜光刻工艺在该氮化硅薄膜上制作过孔，形成钝化层16；
步骤5、在完成步骤4的阵列基板上制作有机膜，并通过灰阶掩膜光刻工艺形成有机层17；
步骤6、在完成步骤5的阵列基板上制作像素电极薄膜，并通过掩膜光刻工艺形成像素电极18；
步骤7、在完成步骤6的阵列基板上制作反射金属薄膜，并通过掩膜光刻工艺形成反射层19。
由上述制作方法得知，现有技术在制作图1所示的像素结构的过程中需要经过7次掩膜光刻工艺，这就导致了制作工艺的复杂。
发明内容
本发明的实施例提供一种像素结构、液晶显示面板及制作方法，用以简化半透半反式液晶显示器阵列基板上像素结构的制作工艺。
为达到上述目的，本发明的实施例采用如下技术方案：
一种像素结构，包括薄膜晶体管、反射区域及透射区域，所述反射区域包括：有机层、反射层和像素电极，所述透射区域包括：像素电极；
所述反射区域的像素电极和所述透射区域的像素电极呈一体结构，且呈一体结构的像素电极与所述薄膜晶体管的漏极相连接；所述反射区域的有机层先于所述薄膜晶体管的栅极、以及所述反射层制作在阵列基板上；所述反射区域的反射层与所述薄膜晶体管的栅极利用同种金属同层制作完成。
一种液晶显示面板，包括：阵列基板、彩膜基板以及两基板间的液晶层；在阵列基板上形成有像素结构，所述像素结构包括薄膜晶体管、反射区域及透射区域，所述反射区域包括：有机层、反射层和像素电极，所述透射区域包括：像素电极；
所述反射区域的像素电极和所述透射区域的像素电极呈一体结构，且呈一体结构的像素电极与所述薄膜晶体管的漏极相连接；所述反射区域的有机层先于所述薄膜晶体管的栅极、以及所述反射层制作在阵列基板上；所述反射区域的反射层与所述薄膜晶体管的栅极利用同种金属同层制作完成。
一种像素结构的制作方法，包括：
步骤A1、在阵列基板上制作有机膜，并通过掩膜光刻工艺在阵列基板的反射区域形成有机层；
步骤A2、在完成步骤A1的阵列基板上制作栅金属薄膜，并通过掩膜光刻工艺形成栅线、薄膜晶体管的栅极及位于所述反射区域中所述有机层上的反射层；
在完成步骤A2的阵列基板上依次形成栅绝缘层，有源层，源漏金属层，钝化层以及像素电极。
本发明实施例提供的像素结构、液晶显示面板及制作方法，通过先在阵列基板上形成有机层，之后再利用同种金属制作栅金属薄膜，并通过一次掩膜光刻工艺形成栅线、薄膜晶体管的栅极及反射层；由于反射层和栅线、薄膜晶体管的栅极利用一次掩膜光刻工艺制作完成，较现有技术而言，就可以简化半透半反式液晶显示器阵列基板上像素结构的制作工艺，进而可以节省生产成本。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。
图1为现有技术中阵列基板上像素结构的结构图；
图2为本发明实施例提供的阵列基板上一种像素结构的剖视图；
图3为本发明实施例提供的阵列基板上另一种像素结构的剖视图；
图4为本发明实施例提供的一种液晶显示面板的剖视图。
附图标记：
001-阵列基板，002-彩膜基板，003-液晶层；
11-薄膜晶体管的栅极，12-栅绝缘层，13-有源层，14-薄膜晶体管的源极，15-薄膜晶体管的漏极，16-钝化层，17-有机层，18-像素电极，19-反射层。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
为了简化半透半反式液晶显示器阵列基板001上像素结构的制作工艺，如图2所示，本发明实施例提供了一种像素结构包括：薄膜晶体管、反射区域及透射区域，所述反射区域包括：有机层17、反射层19和像素电极18，所述透射区域包括：像素电极18；
所述反射区域的像素电极和所述透射区域的像素电极呈一体结构，且呈一体结构的像素电极18与所述薄膜晶体管的漏极15相连接；所述反射区域的有机层17先于所述薄膜晶体管的栅极11制作在阵列基板001上；所述反射区域的反射层19与所述薄膜晶体管的栅极11利用同种金属同层制作完成。
所述同种金属可以是钼、铜、铝或铝钕合金等金属中的一种或其他合金金属；所述利用同种金属同层制作具体为：在形成有有机层17的阵列基板001上沉积或溅射钼、铜、铝或铝钕合金等金属中的一种或其他合金金属制作栅金属薄膜，通过一次掩膜光刻工艺形成反射层19、薄膜晶体管的栅极11，同时形成栅线。
由于本发明提供的像素结构将反射层19与薄膜晶体管的栅极11利用同种金属同层制作完成，故可以减少一次掩膜工艺，简化了阵列基板001上像素结构的制作工艺，从而可以节约生产成本。
如图2所示，所述反射区域的像素电极18和反射层19之间可以只形成有栅绝缘层12；制作这种像素结构，在形成钝化层时需要先在形成有源漏金属层的阵列基板001上制作绝缘薄膜例如氮化硅薄膜，之后利用掩膜板按照图2中钝化层16的形状图形化绝缘薄膜，形成图2所示的钝化层16，此时反射区域的像素电极18和反射层19之间没有钝化层，只有栅绝缘层12。
另外，所述反射区域的像素电极18和反射层19之间可以形成有栅绝缘层12和钝化层16两层；制作这种像素结构，在形成钝化层16时需要先在形成有源漏金属层的阵列基板001上制作绝缘薄膜例如氮化硅薄膜，之后利用掩膜板按照图3中钝化层16的形状图形化绝缘薄膜，即只在薄膜晶体管的漏极15和像素电极18的连接处形成过孔，从而形成图3所示的钝化层16，此时反射区域的像素电极18和反射层19之间可以形成有栅绝缘层12和钝化层16两层。
优选的，所述反射层19的截面为波浪形、锯齿波形或三角波形；形成这种形状的反射层19，可以使得由外界的入射光在反射层19形成漫反射，使得反射光在各个视角上更加均匀。
图2和图3所示的像素结构，只是在制作钝化层时所使用的掩膜不同而已，两者在制作方法上并无本质区别，均可以参考如下像素结构的制作方法，该制作方法包括：
步骤A1、在阵列基板001上制作有机膜，并通过掩膜光刻工艺形成有机层17；
所述掩膜光刻工艺一般包括：涂胶、曝光、显影、刻蚀、剥离等工艺。需要说明的是本发明实施例中的所有掩膜光刻工艺包括两种：一种是使用普通的掩膜板，另一种是使用灰阶掩膜板；利用灰阶掩模板进行光刻的工艺也称为灰阶掩膜工艺。在工业生产中，具体使用普通的掩膜板还是灰阶掩膜板要根据实际情况进行选择。
优选的，此步骤可以为：在阵列基板001上制作有机膜，并通过灰阶掩膜光刻工艺形成截面顶端为波浪形、锯齿波形或三角波形的有机层17。这样是为了在进行步骤A2形成反射层19时，使得反射层19的截面为波浪形、锯齿波形或三角波形。
步骤A2、在完成步骤A1的阵列基板001上制作栅金属薄膜，并通过掩膜光刻工艺形成栅线、薄膜晶体管的栅极11及反射层19；
由于此步骤只制作了一层栅金属薄膜，然后通过掩膜光刻工艺形成栅线、薄膜晶体管的栅极11及反射层19；所以称薄膜晶体管的栅极11和反射层19为利用同种金属同层制作完成。
在完成步骤A2的阵列基板001上依次形成有栅绝缘层12，有源层13，源漏金属层，钝化层以及像素电极18；在步骤A2之后形成的各层都可以按照现有技术中的工艺完成，具体可以包括：
步骤A3、在完成步骤A2的阵列基板001上制作绝缘薄膜，作为栅绝缘层12；并在形成有栅绝缘层的阵列基板上制作半导体薄膜，并通过掩膜光刻工艺形成有源层13；在形成有半导体薄膜的阵列基板001上制作源漏金属薄膜，并通过掩膜光刻工艺形成源漏金属层；所述源漏金属层包括：薄膜晶体管的源极14、漏极15；
步骤A4、在完成步骤A3的阵列基板001上制作绝缘薄膜，并通过掩膜光刻工艺形成图2或图3所示的钝化层16；当然，如2或图3中的钝化层16的形状及大小只是作为示例，而并不局限于图中所示。
步骤A5、在完成步骤A4的阵列基板001上制作像素电极薄膜，并通过掩膜光刻工艺形成像素电极18。
通过以上步骤容易得出，步骤A3进行两次掩膜工艺，其他步骤均是进行一次掩膜工艺，故制作本发明实施例提供的像素结构只需要进行6次掩膜光刻工艺，显然可以比现有技术中少一次掩膜光刻工艺，从而简化制作工艺；另外，由于减少了掩膜板的使用，故可以减少生产成本。
另外，为了进一步简化制作工艺，形成有源层13和源漏金属层的步骤可以包括：在形成有栅绝缘层12的阵列基板001上制作半导体薄膜、源漏金属薄膜，并通过一次掩膜光刻工艺形成有源层13、源漏金属层。具体地，上述制作方法中步骤A3为，在完成步骤A2的阵列基板001上制作绝缘薄膜，作为栅绝缘层12；并在形成有栅绝缘层的阵列基板上制作半导体薄膜、源漏金属薄膜，并通过一次掩膜光刻工艺形成有源层13、源漏金属层。由于制作有源层13和源漏金属层可以通过一次掩膜光刻工艺完成，故制作本发明实施例提供的像素结构可以使用5次掩膜光刻工艺完成，从而进一步简化了制作工艺。
如图4所示，本发明实施例还提供了一种液晶显示面板，该液晶显示面板包括：阵列基板001、彩膜基板002以及两基板间的液晶层003；在阵列基板001上形成有像素结构，所述像素结构包括薄膜晶体管、反射区域及透射区域，所述反射区域包括：有机层17、反射层19和像素电极18，所述透射区域包括：像素电极18；
所述反射区域的像素电极18和所述透射区域的像素电极18呈一体结构，且呈一体结构的像素电极18与所述薄膜晶体管的漏极15相连接；所述反射区域的有机层17先于所述薄膜晶体管的栅极11制作在阵列基板001上；所述反射区域的反射层19与所述薄膜晶体管的栅极11利用同种金属同层制作完成。
优选的，所述反射层19的截面为波浪形、锯齿波形或三角波形。
图4所示的液晶显示面板阵列基板001上形成的像素结构是参考图2得到的，当然参考图3所示像素结构也是可以的；其中图2中反射区域的像素电极18和反射层19之间形成有栅绝缘层12，图3中反射区域的像素电极18和反射层19之间形成有栅绝缘层12和钝化层16两层。
由于本发明实施例提供的液晶显示面板，在制作阵列基板001上的像素结构的过程中，将反射层19与薄膜晶体管的栅极11利用同种金属同层制作完成，故可以减少一次掩膜工艺，简化了阵列基板001上像素结构的制作工艺，从而可以节约生产成本。
以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到的变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应以所述权利要求的保护范围为准。

Claims (9)

1.一种像素结构，包括薄膜晶体管、反射区域及透射区域，其特征在于，所述反射区域包括：有机层、反射层和像素电极，所述透射区域包括：像素电极；
所述反射区域的像素电极和所述透射区域的像素电极呈一体结构，且呈一体结构的像素电极与所述薄膜晶体管的漏极相连接；所述反射区域的反射层与所述薄膜晶体管的栅极利用同种金属同层制作完成；所述反射区域的有机层，同层的所述薄膜晶体管的栅极和所述反射层，栅绝缘层，有源层，源漏金属层，钝化层，所述像素电极依次制作在阵列基板上。
2.根据权利要求1所述的像素结构，其特征在于，所述反射区域的像素电极和反射层之间形成有栅绝缘层，或形成有栅绝缘层和钝化层两层。
3.根据权利要求1或2所述的像素结构，其特征在于，所述反射层的截面为波浪形、锯齿波形或三角波形。
4.一种液晶显示面板，包括：阵列基板、彩膜基板以及两基板间的液晶层；在阵列基板上形成有像素结构，所述像素结构包括薄膜晶体管、反射区域及透射区域，其特征在于，所述反射区域包括：有机层、反射层和像素电极，所述透射区域包括：像素电极；
所述反射区域的像素电极和所述透射区域的像素电极呈一体结构，且呈一体结构的像素电极与所述薄膜晶体管的漏极相连接；所述反射区域的反射层与所述薄膜晶体管的栅极利用同种金属同层制作完成；所述反射区域的有机层，同层的所述薄膜晶体管的栅极和所述反射层，栅绝缘层，有源层，源漏金属层，钝化层，所述像素电极依次制作在阵列基板上。
5.根据权利要求4所述的液晶显示面板，其特征在于，所述反射区域的像素电极和反射层之间形成有栅绝缘层，或形成有栅绝缘层和钝化层两层。
6.根据权利要求4或5所述的液晶显示面板，其特征在于，所述反射层的截面为波浪形、锯齿波形或三角波形。
7.一种像素结构的制作方法，其特征在于，包括：步骤A1、在阵列基板上制作有机膜，并通过掩膜光刻工艺在阵列基板的反射区域形成有机层；
步骤A2、在完成步骤A1的阵列基板上制作栅金属薄膜，并通过掩膜光刻工艺形成栅线、薄膜晶体管的栅极及位于所述反射区域中所述有机层上的反射层；
在完成步骤A2的阵列基板上依次形成有栅绝缘层，有源层，源漏金属层，钝化层以及像素电极。
8.根据权利要求7所述的像素结构的制作方法，其特征在于，形成有源层和源漏金属层具体包括：在形成有栅绝缘层的阵列基板上制作半导体薄膜、源漏金属薄膜，并通过一次掩膜光刻工艺形成有源层、源漏金属层。
9.根据权利要求7或8所述像素结构的制作方法，其特征在于，所述步骤A1具体为：在阵列基板上制作有机膜，并通过灰阶掩膜光刻工艺形成截面顶端为波浪形、锯齿波形或三角波形的有机层。
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