CN102646793B - 半导体器件及其制造方法 - Google Patents
半导体器件及其制造方法 Download PDFInfo
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- CN102646793B CN102646793B CN201210123886.XA CN201210123886A CN102646793B CN 102646793 B CN102646793 B CN 102646793B CN 201210123886 A CN201210123886 A CN 201210123886A CN 102646793 B CN102646793 B CN 102646793B
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- CLYVDMAATCIVBF-UHFFFAOYSA-N pigment red 224 Chemical compound C=12C3=CC=C(C(OC4=O)=O)C2=C4C=CC=1C1=CC=C2C(=O)OC(=O)C4=CC=C3C1=C42 CLYVDMAATCIVBF-UHFFFAOYSA-N 0.000 description 1
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- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 1
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- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
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- 238000007789 sealing Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
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- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
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- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/50—Forming devices by joining two substrates together, e.g. lamination techniques
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
- Photovoltaic Devices (AREA)
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| CN201410751970.5A Active CN104638009B (zh) | 2005-08-31 | 2006-08-31 | 半导体器件及其制造方法 |
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| CN201410751970.5A Active CN104638009B (zh) | 2005-08-31 | 2006-08-31 | 半导体器件及其制造方法 |
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| JP (3) | JP2012178579A (enExample) |
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Families Citing this family (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5834327A (en) | 1995-03-18 | 1998-11-10 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing display device |
| US7408263B2 (en) * | 2005-05-03 | 2008-08-05 | E.I. Du Pont De Nemours And Company | Anisotropic conductive coatings and electronic devices |
| US7968382B2 (en) | 2007-02-02 | 2011-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
| EP1976001A3 (en) * | 2007-03-26 | 2012-08-22 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| KR101345378B1 (ko) * | 2007-05-17 | 2013-12-24 | 삼성전자주식회사 | ＺｎＯ 계 박막 트랜지스터 및 그 제조방법 |
| JP5367330B2 (ja) * | 2007-09-14 | 2013-12-11 | 株式会社半導体エネルギー研究所 | Ｓｏｉ基板の作製方法及び半導体装置の作製方法 |
| US8236668B2 (en) * | 2007-10-10 | 2012-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing SOI substrate |
| JP2009260313A (ja) | 2008-03-26 | 2009-11-05 | Semiconductor Energy Lab Co Ltd | Ｓｏｉ基板の作製方法及び半導体装置の作製方法 |
| US8182633B2 (en) * | 2008-04-29 | 2012-05-22 | Samsung Electronics Co., Ltd. | Method of fabricating a flexible display device |
| US8610155B2 (en) | 2008-11-18 | 2013-12-17 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, method for manufacturing the same, and cellular phone |
| US20100253902A1 (en) | 2009-04-07 | 2010-10-07 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and manufacturing method thereof |
| GB0909721D0 (en) * | 2009-06-05 | 2009-07-22 | Plastic Logic Ltd | Dielectric seed layer |
| US8576209B2 (en) | 2009-07-07 | 2013-11-05 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| JP5605097B2 (ja) * | 2010-09-03 | 2014-10-15 | ソニー株式会社 | 電子素子の製造方法 |
| KR20120042151A (ko) * | 2010-10-22 | 2012-05-03 | 삼성모바일디스플레이주식회사 | 플렉서블 디스플레이 장치의 제조 방법 |
| US8905972B2 (en) | 2010-11-20 | 2014-12-09 | Perqflo, Llc | Infusion pumps |
| US9780242B2 (en) | 2011-08-10 | 2017-10-03 | Ascent Solar Technologies, Inc. | Multilayer thin-film back contact system for flexible photovoltaic devices on polymer substrates |
| JP2013065824A (ja) * | 2011-08-29 | 2013-04-11 | Sony Corp | トランジスタおよびその製造方法、並びに表示装置 |
| TWI527207B (zh) * | 2011-10-21 | 2016-03-21 | 友達光電股份有限公司 | 可撓式有機發光裝置及其製作方法 |
| US9136402B2 (en) * | 2012-02-28 | 2015-09-15 | International Business Machines Corporation | High efficiency flexible solar cells for consumer electronics |
| US9269588B2 (en) | 2012-07-31 | 2016-02-23 | Wayne State University | Method of making flexible, foldable, and stretchable devices |
| TWI500077B (zh) * | 2012-11-29 | 2015-09-11 | Ind Tech Res Inst | 軟性元件的取出方法及基板之間的分離方法 |
| CN103855311A (zh) * | 2012-11-30 | 2014-06-11 | 海洋王照明科技股份有限公司 | 有机电致发光装置及其制备方法 |
| TWI497735B (zh) * | 2013-10-25 | 2015-08-21 | Iner Aec Executive Yuan | 光電元件之可撓性電極封裝結構 |
| KR102368997B1 (ko) | 2014-06-27 | 2022-02-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치, 모듈, 전자 기기, 발광 장치의 제작 방법 |
| US12178992B2 (en) | 2014-09-30 | 2024-12-31 | Medtronic Minimed, Inc. | Different disposable assemblies for the same reusable assembly |
| US10159786B2 (en) | 2014-09-30 | 2018-12-25 | Perqflo, Llc | Hybrid ambulatory infusion pumps |
| FR3027155B1 (fr) * | 2014-10-08 | 2018-01-12 | Ecole Polytechnique | Procede de fabrication d'un dispositif electronique, en particulier a base de nanotubes de carbone |
| KR101629468B1 (ko) * | 2015-01-30 | 2016-06-10 | 한국과학기술원 | 웨어러블 박막 소자 및 이의 제조 방법 |
| DE102015114167B4 (de) * | 2015-08-26 | 2025-08-28 | Pictiva Displays International Limited | Leuchtdiode und Verfahren zur Herstellung einer Leuchtdiode |
| WO2017079008A1 (en) * | 2015-11-04 | 2017-05-11 | Ascent Solar Technologies, Inc. | Multilayer thin-film back contact system for flexible photovoltaic devices on polymer substrates |
| KR101730537B1 (ko) | 2015-11-30 | 2017-04-26 | 엘지디스플레이 주식회사 | 표시장치와 그의 제조방법 |
| JP6484756B2 (ja) | 2016-04-12 | 2019-03-13 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法、及びフレキシブルデバイスの作製方法 |
| US10181424B2 (en) | 2016-04-12 | 2019-01-15 | Semiconductor Energy Laboratory Co., Ltd. | Peeling method and manufacturing method of flexible device |
| JP6835644B2 (ja) * | 2017-03-27 | 2021-02-24 | 積水化学工業株式会社 | 太陽電池 |
| US10586925B2 (en) * | 2017-04-17 | 2020-03-10 | Tianma Microelectronics Co., Ltd. | Release film, display device manufacturing method, and device |
| US11220735B2 (en) * | 2018-02-08 | 2022-01-11 | Medtronic Minimed, Inc. | Methods for controlling physical vapor deposition metal film adhesion to substrates and surfaces |
| CN108493209B (zh) * | 2018-05-24 | 2020-06-23 | 京东方科技集团股份有限公司 | 一种显示基板、显示装置以及显示基板的制作方法 |
| CN109087936A (zh) * | 2018-08-24 | 2018-12-25 | 京东方科技集团股份有限公司 | 一种柔性显示基板的制备方法 |
| CN110310914B (zh) * | 2019-07-04 | 2021-12-31 | 京东方科技集团股份有限公司 | 一种柔性器件及其制作方法、柔性装置 |
| CN112349839B (zh) * | 2020-10-26 | 2022-11-01 | 东北师范大学 | 一种与光刻电极相兼容的本征可拉伸有机场效应晶体管及其制备方法 |
| US11908723B2 (en) * | 2021-12-03 | 2024-02-20 | International Business Machines Corporation | Silicon handler with laser-release layers |
| CN114656804B (zh) * | 2022-03-03 | 2022-12-09 | 江苏圣天新材料有限公司 | 一种覆铜板用软性复合硅微粉的制备方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6236587B1 (en) * | 1997-09-01 | 2001-05-22 | Thin Film Electronics Asa | Read-only memory and read-only memory devices |
| CN1409374A (zh) * | 2001-08-22 | 2003-04-09 | 株式会社半导体能源研究所 | 剥离方法以及制造半导体器件的方法 |
Family Cites Families (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0730012A (ja) | 1993-07-09 | 1995-01-31 | Fujitsu Ltd | 半導体装置 |
| JPH11195487A (ja) * | 1997-12-27 | 1999-07-21 | Tdk Corp | 有機ｅｌ素子 |
| JP4877675B2 (ja) * | 1999-06-28 | 2012-02-15 | 株式会社半導体エネルギー研究所 | 電気光学装置の作製方法 |
| US6953947B2 (en) * | 1999-12-31 | 2005-10-11 | Lg Chem, Ltd. | Organic thin film transistor |
| US6541910B2 (en) * | 2000-04-06 | 2003-04-01 | Seiko Epson Corporation | Organic el display |
| JP2002032037A (ja) * | 2000-05-12 | 2002-01-31 | Semiconductor Energy Lab Co Ltd | 表示装置 |
| JP2002280187A (ja) * | 2001-03-16 | 2002-09-27 | Seiko Epson Corp | 有機ｅｌ素子 |
| US6900470B2 (en) * | 2001-04-20 | 2005-05-31 | Kabushiki Kaisha Toshiba | Display device and method of manufacturing the same |
| JP4027740B2 (ja) | 2001-07-16 | 2007-12-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US8415208B2 (en) | 2001-07-16 | 2013-04-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and peeling off method and method of manufacturing semiconductor device |
| JP4493905B2 (ja) * | 2001-11-09 | 2010-06-30 | 株式会社半導体エネルギー研究所 | 発光装置及びその作製方法 |
| JP3951701B2 (ja) * | 2001-12-18 | 2007-08-01 | セイコーエプソン株式会社 | 表示装置の製造方法、電子機器の製造方法、表示装置および電子機器 |
| US7038377B2 (en) * | 2002-01-16 | 2006-05-02 | Seiko Epson Corporation | Display device with a narrow frame |
| EP1343206B1 (en) * | 2002-03-07 | 2016-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting apparatus, electronic apparatus, illuminating device and method of fabricating the light emitting apparatus |
| JP2003272827A (ja) * | 2002-03-13 | 2003-09-26 | Matsushita Electric Ind Co Ltd | 有機発光素子及びその製造方法 |
| JP2004047791A (ja) | 2002-07-12 | 2004-02-12 | Pioneer Electronic Corp | 有機薄膜スイッチングメモリ素子及びメモリ装置 |
| TWI272641B (en) * | 2002-07-16 | 2007-02-01 | Semiconductor Energy Lab | Method of manufacturing a semiconductor device |
| KR20040025383A (ko) * | 2002-09-19 | 2004-03-24 | 삼성에스디아이 주식회사 | 유기 전계 발광 표시 장치 및 그 제조방법 |
| JP2004127627A (ja) * | 2002-09-30 | 2004-04-22 | Semiconductor Energy Lab Co Ltd | 表示装置 |
| US7169461B2 (en) | 2002-10-17 | 2007-01-30 | Asahi Glass Company, Limited | Laminate, a substrate with wires, an organic EL display element, a connection terminal for the organic EL display element and a method for producing each |
| WO2004040648A1 (ja) * | 2002-10-30 | 2004-05-13 | Semiconductor Energy Laboratory Co., Ltd. | 半導体装置および半導体装置の作製方法 |
| US6905908B2 (en) | 2002-12-26 | 2005-06-14 | Motorola, Inc. | Method of fabricating organic field effect transistors |
| JP4830254B2 (ja) * | 2003-01-23 | 2011-12-07 | セイコーエプソン株式会社 | 有機ｅｌ装置の製造方法及び電子機器 |
| JP2004310051A (ja) * | 2003-03-24 | 2004-11-04 | Sony Corp | 超薄型電気光学表示装置の製造方法および製造装置 |
| US7141348B2 (en) * | 2003-05-23 | 2006-11-28 | Intelleflex Corporation | Lamination and delamination technique for thin film processing |
| JP2005085604A (ja) * | 2003-09-09 | 2005-03-31 | Seiko Epson Corp | 有機金属化合物の薄膜形成方法、有機金属化合物薄膜、およびこれを備えた有機電子デバイスの製造方法、有機電子デバイス、有機エレクトロルミネッセンスの製造方法、有機エレクトロルミネッセンス、及び電子機器 |
| JPWO2005027582A1 (ja) * | 2003-09-10 | 2006-11-24 | 富士通株式会社 | 表示装置及びその製造方法 |
| JP4016144B2 (ja) * | 2003-09-19 | 2007-12-05 | ソニー株式会社 | 有機発光素子およびその製造方法ならびに表示装置 |
| JP4748967B2 (ja) * | 2003-11-04 | 2011-08-17 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US20050183769A1 (en) * | 2003-11-10 | 2005-08-25 | Hiroki Nakagawa | Method of producing substrate for dye-sensitized solar cell and dye-sensitized solar cell |
| JP4276603B2 (ja) * | 2003-12-16 | 2009-06-10 | セイコーエプソン株式会社 | 有機エレクトロルミネッセンス装置および電子機器 |
| US7166399B2 (en) * | 2004-04-14 | 2007-01-23 | Xerox Corporation | Photosensitive member having anti-curl backing layer with lignin sulfonic acid doped polyaniline |
| JP2005317476A (ja) * | 2004-04-30 | 2005-11-10 | Toshiba Matsushita Display Technology Co Ltd | 表示装置 |
-
2006
- 2006-08-14 EP EP06016936A patent/EP1760798B1/en not_active Not-in-force
- 2006-08-25 US US11/510,396 patent/US7745252B2/en not_active Expired - Fee Related
- 2006-08-31 CN CN2006101290242A patent/CN1925187B/zh active Active
- 2006-08-31 CN CN201410751970.5A patent/CN104638009B/zh active Active
- 2006-08-31 CN CN201210123886.XA patent/CN102646793B/zh active Active
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2012
- 2012-04-17 JP JP2012093742A patent/JP2012178579A/ja not_active Withdrawn
- 2012-11-16 JP JP2012251932A patent/JP5521021B2/ja active Active
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2014
- 2014-05-14 JP JP2014100082A patent/JP5917596B2/ja active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6236587B1 (en) * | 1997-09-01 | 2001-05-22 | Thin Film Electronics Asa | Read-only memory and read-only memory devices |
| CN1409374A (zh) * | 2001-08-22 | 2003-04-09 | 株式会社半导体能源研究所 | 剥离方法以及制造半导体器件的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1760798B1 (en) | 2012-01-11 |
| JP2012178579A (ja) | 2012-09-13 |
| CN104638009B (zh) | 2018-07-10 |
| US7745252B2 (en) | 2010-06-29 |
| JP5917596B2 (ja) | 2016-05-18 |
| CN1925187A (zh) | 2007-03-07 |
| JP2013080935A (ja) | 2013-05-02 |
| JP5521021B2 (ja) | 2014-06-11 |
| CN1925187B (zh) | 2012-06-27 |
| CN102646793A (zh) | 2012-08-22 |
| CN104638009A (zh) | 2015-05-20 |
| JP2014199929A (ja) | 2014-10-23 |
| US20070048970A1 (en) | 2007-03-01 |
| EP1760798A1 (en) | 2007-03-07 |
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