CN102646610A - 半导体器件、用于制造半导体器件的方法以及电源装置 - Google Patents

半导体器件、用于制造半导体器件的方法以及电源装置 Download PDF

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Publication number
CN102646610A
CN102646610A CN2012100319499A CN201210031949A CN102646610A CN 102646610 A CN102646610 A CN 102646610A CN 2012100319499 A CN2012100319499 A CN 2012100319499A CN 201210031949 A CN201210031949 A CN 201210031949A CN 102646610 A CN102646610 A CN 102646610A
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metal
semiconductor chip
fibrous
fusible metal
knitting layer
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CN102646610B (zh
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今泉延弘
冈本圭史郎
渡部庆二
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Fujitsu Ltd
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Fujitsu Ltd
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Abstract

本发明提供一种半导体器件、用于制造半导体器件的方法以及电源装置，所述用于制造半导体器件的方法包括：将包含具有至少一个具有金属的外表面的纤维状材料的片置于基板的半导体芯片安装区域上；在所述半导体芯片安装区域上形成包含易熔金属的接合层；将半导体芯片置于所述半导体芯片安装区域上；以及通过加热利用所述包含易熔金属的接合层将所述半导体芯片接合到所述半导体芯片安装区域。

Description

半导体器件、用于制造半导体器件的方法以及电源装置
技术领域
本文中讨论的实施方案涉及半导体器件、用于制造半导体器件的方法以及电源装置。
背景技术
存在具有包括载流子传送层和载流子供给层的半导体多层结构的常规高电子迁移率晶体管(HEMT)。
近年来，基于AlGaN和GaN(其为GaN化合物半导体)的异质结，正在积极开发具有HEMT结构的GaN-HEMT，所述HEMT结构包括包含GaN的电子传送层和包含AlGaN的电子供给层，所述电子传送层和电子供给层相堆叠。
GaN具有约3.4eV的带隙，其比Si的带隙(约1.1eV)和GaAs的带隙(约1.4eV)大，因此，GaN是具有高击穿场强的材料。GaN也是具有高饱和电子速度的材料。因此，GaN有望作为用于获得半导体器件、能够进行高压操作、用于能够获得大功率的电源的材料。GaN-HEMT预计作为例如用在设置在电子设备中的电源装置中使用的高效开关元件或用在电动车辆中使用的高压功率器件。
包括这种GaN-HEMT的半导体芯片安装在基板如电路板或引线框的载台上。
用于将半导体芯片安装在基板上的技术如下：使用例如芯片接合剂如焊料或接合剂将半导体芯片的背表面接合到基板的半导体芯片安装区域，从而将半导体芯片安装在基板上。
对于相关技术，已经公开了以下文件：日本公开特许公报号2006-156437、日本公开特许公报号6-132442、日本公开特许公报等号58-207645。
发明内容
考虑到上述内容，本实施方案的一个目的是提供一种半导体器件、用于制造该半导体器件的方法以及电源，在半导体芯片安装在基板的载台上时抑制因移动或转动产生的位移。
根据实施方案的一个方面，用于制造半导体器件的方法包括：将包含具有至少一个具有金属的外表面的纤维状材料的片置于基板的半导体芯片安装区域上；在半导体芯片安装区域上形成包含易熔金属的接合层；将半导体芯片置于半导体芯片安装区域上；以及通过加热用包含易熔金属的接合层将半导体芯片接合到半导体芯片安装区域。
附图说明
图1A至1E是示出根据第一实施方案的用于制造半导体器件的方法的一个实施例的平面图；
图2A和2B是在根据第一实施方案的用于制造半导体器件的方法中使用的纤维状材料片的一个实施例的截面图；
图3是示出由根据第一实施方案的用于制造半导体器件的方法产生的效果的示意性平面图；
图4是示出由根据第一实施方案的用于制造半导体器件的方法产生的效果的示意性截面图；
图5是示出与用于制造半导体器件的传统方法有关的问题的截面图；
图6A是示出通过根据第一实施方案的方法制造的半导体器件的构造和效果的截面图；
图6B是描述通过根据第一实施方案的方法制造的半导体器件的构造和效果的图示，并且也是在图6A中用符号X表示的区域的局部放大视图；
图7是示出根据第一实施方案的半导体器件的构造的一个实施例的平面图；
图8是如下片的截面图，该片包含使用在根据第一实施方案的修改方案的用于制造半导体器件的方法中使用的复合材料所制备的纤维状材料；
图9是示出通过根据第一实施方案的修改方案的方法制造的半导体器件的接合层的构造和效果的截面图；
图10是描述根据第二实施方案的包含在电源装置中的PFC电路的构造的一个实施例的图示；以及
图11是示出与本实施方案有关的问题的平面图。
具体实施方式
现在参考附图对根据本文中讨论的实施方案的半导体器件、用于制造半导体器件的方法以及电源装置进行描述。
下面参考图1至7描述根据第一实施方案的半导体器件和用于制造半导体器件的方法。
根据本实施方案的半导体器件是包含氮化物(例如，GaN)化合物半导体的化合物半导体器件，并且也是用树脂包封的半导体芯片制备的半导体封装，该树脂包封的半导体芯片具有包括载流子传送层和载流子供给层的氮化物半导体多层结构。半导体芯片也称为半导体元件。
下面举例说明分立封装。
参考图7，半导体器件包含半导体芯片1、用于安装半导体芯片1的载台(stage)2、接合层3、栅极引线21、源极引线22、漏极引线23、接合线4(此处为Al线)和模制化合物7。模制化合物7也称为模制树脂。载台2是引线框的一部分。载台2也称为基板。接合线4可以是Au线或Cu线。
半导体芯片1安装在载台2上，并且具有通过接合线4分别耦接到栅极引线21、源极引线22和漏极引线23的栅极垫24、源极垫25和漏极垫26。这些组件用模制化合物7包封。
载台2固定至半导体芯片1的背面(基板背面)并与漏极引线23成为一体。载台2和漏极引线23彼此电耦接。因此，漏极垫26通过接合线4中的一个接合线连接到载台2，从而允许漏极垫26通过该接合线4耦接到漏极引线23。本实施方案不限于这种构造，并且载台2可以电耦接到源极引线22。
半导体芯片1包括具有GaN半导体多层结构(其包括GaN电子传送层和AlGaN电子供给层)的GaN-HEMT，并且例如为用于设置在电子或电源装置中的开关元件中的电源的GaN-HEMT芯片。半导体芯片1包括布置在GaN半导体多层结构上方的栅电极、源电极和漏电极，并且，还包括设置在这些电极上方的布线层，包括布线。栅极垫24、源极垫25和漏极垫26暴露在半导体芯片1的正面。GaN-HEMT也称为GaN基HEMT。GaN-HEMT芯片也称为GaN基HEMT芯片。
下面参考图1A至1E描述根据本实施方案的用于制造半导体器件(分立封装)的方法。用于制造半导体器件的方法也称为半导体芯片安装方法。
如图1A至1C所示，将具有包括GaN电子传送层和AlGaN电子供给层的GaN半导体多层结构的半导体芯片1固定在引线框的载台2上。下面对细节进行描述。
如图1D所示，进行引线接合。也就是说，利用接合线4将半导体芯片1的栅极垫24、源极垫25和漏极垫26分别耦接到栅极引线21、源极引线22和漏极引线23(见图7)。这允许半导体芯片1电耦接到引线框。接合线4称为金属线。
如图1E所示，通过例如传递模制法对半导体芯片1进行树脂包封，其中半导体芯片1安装在引线框上。也就是说，形成模制化合物7来封装半导体芯片1。
将栅极引线21和源极引线22与引线框(未示出)分离，从而获得半导体器件(分立封装)。
在如图11所示使用例如芯片接合剂102如由导热树脂制成的粘合剂或焊料将半导体芯片1固定到引线框的载台2上的情况下，由于芯片接合剂102在加热和接合期间不均匀分布(例如，焊料湿润覆盖不匀)，所以半导体芯片1发生位移、移动或转动。
因此，在该实施方案中，如下所述，将半导体芯片1固定在引线框的载台2上。
如图1A所示，将由纤维状金属材料制成的片即纤维状材料片5置于引线框的载台2的半导体芯片安装区域2A上。半导体芯片安装区域2A也称为半导体芯片安装位置或半导体芯片安装区。
纤维状材料片5具有与半导体芯片1的面积基本相等的面积。在该实施方案中，安装在引线框的载台2的半导体芯片安装区域2A上的半导体芯片1具有约4.5mm×约7mm的尺寸。因此，纤维状材料片5具有约4.5mm×约7mm的尺寸。
特别地，纤维状材料片5优选地包含能够与用于将引线框的载台2接合到半导体芯片1背面的易熔金属形成合金的纤维状金属材料。在该实施方案中，纤维状材料片5由单一金属材料形成，特别是由铜形成。用于形成纤维状材料片5的材料不限于这些材料，而是可以为对易熔金属具有可湿性的金属材料。特别地，纤维状材料片5优选由例如能够与易熔金属形成合金的材料如Cu、Ni、Ag或Au制成。引线框中所使用的材料为例如金属材料，如Ni、Cu、Au、Pt、Ag或Pd并优选对易熔金属具有可湿性。
纤维状材料片5可以具有网状结构，其中纤维状金属材料5A为如图2A所示的网状，或者可以具有非织造结构，其中纤维状金属材料5A为非织造的，如图2B所示。
在将纤维状材料片5置于半导体芯片安装区域2A上之后，优选利用超声波将纤维状材料片5暂时接合到半导体芯片安装区域2A，使得置于载台2的半导体芯片安装区域2A上的纤维状材料片5不发生位移。
如图1B所示，在引线框的载台2的半导体芯片安装区域2A上形成接合层3。接合层3用作将引线框的载台2与半导体芯片1的背面接合在一起的层，并且包含易熔金属(易熔金属材料)。在该操作中，在置于载台2的半导体芯片安装区域2A上的纤维状材料片5上形成包含易熔金属的接合层3。
易熔金属优选为在约300℃或更低的温度下熔化并且具有相对低熔点的金属，并且可以为例如焊料(焊料材料)，如Sn-Ag-Cu或Sn-Cu、铟、锡等。
包含易熔金属的接合层3是包含片状易熔金属的层、包含膏状易熔金属的层以及包含易熔金属和树脂(树脂材料或热固性树脂材料)的导热粘合剂的层中的任一种。
膏状易熔金属为例如易熔金属和熔剂的混合物。导热粘合剂为例如粒子状的易熔金属和树脂的混合物。作为一个替代方案，导热粘合剂为例如接合剂组分和金属填料的混合物如焊料的混合物，所述接合剂组分通过将环氧树脂与熔剂成分如有机酸混合来获得。
片状易熔金属为例如Sn-Ag-Cu焊料片。将Sn-Ag-Cu焊料片置于纤维状材料片5上允许在纤维状材料片5上形成接合层3，使得接合层3包含片状易熔金属。膏状易熔金属为例如Sn-Ag-Cu焊膏。将Sn-Ag-Cu焊膏置于纤维状材料片5上，使得能够在纤维状材料片5上形成接合层3，从而使得接合层3包含膏状易熔金属。膏状易熔金属可以为例如包含纳米尺寸的金属粒子并且可以通过活化金属粒子的表面来烧结的纳米膏。包含易熔金属和树脂的导热粘合剂是包含例如具有约22μm的平均尺寸的Sn-Ag-Cu焊粒和树脂的导热粘合剂。将导热粘合剂置于可熔材料片5上允许在纤维状材料片5上形成接合层3，使得接合层3包含导热粘合剂。膏状易熔金属或导热粘合剂可以设置在纤维状材料片5上，使得膏状易熔金属或导热粘合剂通过例如点胶过程或印刷过程如丝网印刷过程施加到或印在纤维状材料片5上。这使接合层3形成在纤维状材料片5上，使得接合层3包含膏状可熔材料或导热粘合剂。
特别地，在使用片状易熔金属的情况下，优选地，在将纤维状材料片5置于载台2的半导体芯片安装区域2A上并且在其上形成包含片状易熔金属的接合层3之后，利用超声波将纤维状材料片5和包含片状易熔金属的接合层3暂时接合到半导体芯片安装区域2A。在这种情况下，可以将纤维状材料片5和包含片状易熔金属的接合层3同时接合到半导体芯片安装区域2A。作为一个替代方案，在将纤维状材料片5接合到半导体芯片安装区域2A之后，可以将包含片状易熔金属的接合层3接合到纤维状材料片5，所述纤维状材料片5已接合到半导体芯片安装区域2A。这使得置于载台2的半导体芯片安装区域2A上的纤维状材料片5和包含片状易熔金属的接合层3可以不发生位移。在如上所述使用这种超声波进行暂时接合的情况下，可以在加热或接合步骤中熔化包含片状易熔金属的接合层3，使得在惰性或还原气氛中加热包含片状易熔金属的接合层3。
在使用片状易熔金属形成接合层3的情况下，纤维状材料片5优选包含熔剂(熔剂材料)。这确保了与易熔金属的接合并且使得纤维状材料片5恰当地放置。
在该实施方案中，将纤维状材料片5置于载台2的半导体芯片安装区域2A上并随后形成接合层3。该实施方案不限于该过程。在由此形成接合层3之后，可以将纤维状材料片5置于接合层3上。
如图1C所示，将半导体芯片1与引线框的载台2的半导体芯片安装区域2A对准，并且将半导体芯片1置于载台2的半导体芯片安装区域2A上。也就是说，将半导体芯片1与载台2的半导体芯片安装区域2A对准，并且以正面朝上的位置利用例如芯片接合剂将半导体芯片1安装在半导体芯片安装区域2A上。在该操作中，将半导体芯片1置于纤维状材料片5上，所述纤维状材料片5置于载台2的半导体芯片安装区域2A和包含易熔金属的接合层3上。半导体芯片1的背面优选具有对易熔金属具有可湿性的材料。半导体芯片1的背面优选用例如Ti-Ni-Cu、Ti-Cu-Ni-Au、Ti-Au等金属化，使得Au在最外面。
通过加热用包含易熔金属的接合层3将半导体芯片1接合到引线框的载台2的半导体芯片安装区域2A。特别地，在使用包含能够与易熔金属形成合金的纤维状金属材料的纤维状材料片5的情况下，包含在接合层3中的易熔金属在加热和接合期间与构成纤维状材料片5的金属形成合金，并由此将半导体芯片1用接合层3接合到载台2的半导体芯片安装区域2A。这使得半导体芯片1固定在引线框的载台2上。
在使用片状易熔金属和膏状易熔金属的情况下，通过在例如回流炉中以约250℃的最高温度加热接合层3来使包含在接合层3中的易熔金属熔化，使得纤维状材料片5被易熔金属浸渍，从而使用包含易熔金属的接合层3将半导体芯片1接合到载台2的半导体芯片安装区域2A。
特别地，在使用片状易熔金属和使用超声波进行暂时接合的情况下，可以通过在惰性或还原气氛中加热接合层3来使包含片状易熔金属的接合层3熔化。可以在使用Sn-Ag-Cu焊料片的情况下，可以通过在例如N2气氛中在约250℃的最高温度下加热Sn-Ag-Cu焊料片来使Sn-Ag-Cu焊料片熔化。这使得不使用需要清洁的熔剂。
在使用例如包含易熔金属和树脂的导热粘合剂的情况下，用包含导热粘合剂的接合层3将半导体芯片1接合到载台2的半导体芯片安装区域2A，使得能够通过在恒温室中将导热粘合剂在约250℃加热约10分钟来使包含在接合层3中的易熔金属熔化并且使树脂固化。在这种情况下，纤维状材料片5在加热和接合期间被易熔金属浸渍。在使用包含能够与易熔金属形成合金的纤维状金属材料的纤维状材料片5的情况下，在加热或接合期间使包含在接合层3中的易熔金属与构成纤维状材料片5的金属形成合金，并且，在加热或接合之后，周围的区域被固化的树脂覆盖。
下面将描述如上所述制造的半导体器件的构造，即包含半导体芯片1的结构。
根据该实施方案的半导体器件包含载台2、置于载台2上的半导体芯片1以及接合层3，所述接合层3包含易熔金属和纤维状金属材料(纤维状材料)，并且将载台2与半导体芯片1接合在一起。
在使用包含能够在制造期间与易熔金属形成合金的纤维状金属材料的纤维状材料片5的情况下，所制造的半导体器件的接合层3包含易熔金属与金属(即组成纤维状金属材料的金属)的合金和纤维状金属材料(纤维状材料)。
在接合层3由导热粘合剂形成的情况下，所制造的半导体器件的接合层3进一步包含树脂。
因此，根据该实施方案的半导体器件和制造方法具有如下优点：当半导体芯片1安装在引线框的载台2上时，半导体芯片1可以免受位移、移动或转动。
这是因为，在为了将半导体芯片1接合到引线框的载台2的半导体芯片安装区域2A而加热接合层3时，包含易熔金属的接合层3的流动性受纤维状材料片5控制。也就是说，例如，其中易熔金属如焊料扩散的区域受纤维状材料片5控制，并且半导体芯片1的位置受易熔金属的自校准作用控制。因此，尽管受到包含易熔金属的接合层3的高表面张力的影响，但是半导体芯片1可以保持在如图3所示的期望位置处，并且可以精确地安装而没有未对准的情况。相比之下，如图11所示，在加热和接合期间仅使用芯片接合剂导致例如半导体芯片1位移、移动或转动。
由于纤维状材料片5包含能够与易熔金属形成合金的纤维状金属材料，因此，如图4所示，在加热和接合期间，包含在接合层3中的易熔金属能够与构成纤维状材料片5的金属形成合金。这允许提高将引线框的载台2与半导体芯片1接合在一起的接合层3的熔点。即使当半导体芯片1包含在例如高压电源装置中时半导体芯片1具有高的操作温度并且产生大量的热，仍可以使接合层3的熔点比半导体芯片1的操作温度高。即使使用半导体芯片1，这也可以抑制在成型树脂7中出现裂缝(其在接合层3被高温操作下的半导体芯片1产生的热熔化时以及半导体芯片1移动时出现)；因此，可以获得高可靠性的半导体器件。特别地，纤维状材料片5均匀地存在于半导体芯片安装区域2A上，因此，易熔金属和构成纤维状金属材料的金属的合金也均匀地存在于半导体芯片安装区域2A上。由于接合层3的一部分被部分地合金化，所以未被合金化的部分被熔化，因此，成型树脂7开裂。为了减少制造期间的位移，不需要使用包含能够与包含在接合层3中的易熔金属形成合金的纤维状金属材料的纤维状材料片5，或者不需要使接合层3部分合金化。
包含在接合层3中的易熔金属熔化或树脂固化的温度低于半导体芯片1的温度上限。换言之，加热温度或接合温度，即为了将半导体芯片1接合到载台2的半导体芯片安装区域2A而对包含易熔金属的接合层3进行加热的温度低于半导体芯片1的温度上限。因此，半导体芯片1是没有缺陷的，并且可以获得高可靠性的半导体器件。
另一方面，在如图5所示使用芯片接合剂(芯片附接剂)102的情况下，由于半导体芯片1如上所述产生大量的热，所以半导体芯片1的操作温度高于或等于芯片接合剂102的熔点。因此，芯片接合剂102失去接合性，半导体芯片1移动，并且在成型树脂7中形成裂缝103；因此，难以获得高可靠性的半导体器件。当芯片接合剂102的接合温度高时，其接合温度超过半导体芯片1的温度上限，因此在某些情况下在半导体芯片1中产生缺陷。
可以用如下方式来减轻由半导体芯片1与引线框的载台2之间的热膨胀差导致的应力：在包含在接合层3中的易熔金属与组成纤维状材料片5的金属形成合金之后，将纤维状金属材料5A留在接合层3中，如图6A和6B所示。也就是说，可以利用留在接合层3中的纤维状金属材料5A来减小由半导体芯片1与引线框的载台2之间的热膨胀差导致的应力，并因此可以提高半导体器件的可靠性。为了将纤维状金属材料5A留在接合层3中，例如，可以加厚组成纤维状材料片5的纤维状金属材料5A，可以增加组成纤维状材料片5的纤维状金属材料5A的量，或者可由纤维状金属材料5A制成纤维状材料片5，使得纤维状金属材料5A的量超过能够与包含在接合层3中的易熔金属形成合金的金属的量的限制。
如上所述形成的接合层3具有高导热率，并因此可以获得高散热效果。
实际上，半导体封装利用如上述实施方案所述的纤维状材料片5来制备，而在对比例中半导体封装没有使用纤维状材料片5来制备。评价这些半导体封装，从而得到以下结果。
纤维状材料片5是由铜制成的、具有约4.5mm×约7mm尺寸的纤维状金属片。每个接合层3利用Sn-Ag-Cu焊膏(实施例1)、Sn-Ag-Cu焊片(实施例2)或包含具有约22μm平均尺寸的Sn-Ag-Cu焊粒的导热粘合剂(实施例3)形成。在使用Sn-Ag-Cu焊膏的情况下，在约250℃的最高温度下进行回流。在使用Sn-Ag-Cu焊片的情况下，为了将引线框的载台2与纤维状材料片5对准以及为了将纤维状材料片5与利用Sn-Ag-Cu焊料片形成的接合层3对准，进行超声波暂时接合，并且，在没有使用熔剂的情况下，在N2气氛中在约250℃的最高温度下进行回流。使用FCB-2US(由松下生产科技有限公司(Panasonic Factory SolutionsCo.，Ltd.)制造)来进行超声波暂时接合，其超声波功率约为80％，并且，幅值为约2.5μm。在使用导热接合剂的情况下，在恒温室中在约250℃下加热约10分钟。
对于不使用纤维状材料片5制备的半导体封装，100个样品中有8个样品出现了由于半导体芯片1的位移引起的引线接合失效。相比之下，对于用纤维状材料片5制备的半导体封装，在100个样品均没有出现由于半导体芯片1的位移引起的引线接合失效。
通过使用约200℃的恒温室模拟器件操作温度，使利用纤维状材料片5制备的半导体封装(实施例1至3)和没有用纤维状材料片5制备的半导体封装(对比实施例1至3)经受高温存储测试。结果，在没有用纤维状材料片5制备的半导体封装中出现了由于模制化合物7的分层引起的失效；但是，在利用纤维状材料片5制备的半导体封装中没有出现由于分层引起的失效。
在截面图中观察利用纤维状材料片5制备的半导体封装(实施例1至3)和没有用纤维状材料片5制备的半导体封装(对比实施例1至3)，并且，分析接合层中的元素。结果证实：在利用纤维状材料片5制备的半导体封装中存在作为Sn-Cu合金中的稳定物质的Cu6Sn5，并且，组成纤维状材料片5的、包含Cu的约6μm纤维状材料5A保持不反应。
此外，为了评价利用纤维状材料片5制备的半导体封装(实施例1至3)和没有用纤维状材料片5制备的半导体封装(对比实施例1至3)的可靠性，进行温度循环试验。温度循环试验的条件如下：将每个半导体封装在约55℃和125℃下保持约15分钟并且在约25℃下保持约5分钟。结果，对于没有用纤维状材料片5制备的半导体封装，在500次循环之后，200个样品中有16个样品产生了缺陷；但是，对于用纤维状材料片5制备的半导体封装，200个样品均没有产生缺陷。
在上面的实施方案中，使用包含纤维状金属材料的纤维状材料片5制造半导体器件。实施方案不局限于纤维状材料片5。可以使用包含具有至少一个具有金属5C的外表面的纤维状金属材料5B(5X)的纤维状材料片5来制造半导体器件，如图8所示。纤维状材料片5是如图8所示的网状物。纤维状材料片5不限于这种网状物，也可以是非织造的(见图2B)。
例如，可以使用以下片：包含纤维状树脂材料5B的纤维状材料片5，其具有覆盖有金属5C的外表面。也就是说，可以使用以下片：具有由树脂材料5B制成的中心部和环绕中心部的外部的片5，所述外部包含利用包含金属材料5C的复合材料制备的纤维状材料5X。作为一个替代方案，例如，可以使用以下片：包含纤维状玻璃材料5B的纤维状材料片5，其具有覆盖有金属5C的外表面。也就是说，可以使用以下片：具有由玻璃材料5B制成的中心部和环绕中心部的外部的片5，所述外部包含利用包含金属材料5C的复合材料制备的纤维状材料5X。
特别地，优选使用以下片：包含纤维状材料5B的片5，其具有至少一个具有能够与易熔金属形成合金的金属5C的外表面。
例如，可以使用以下片：包含不与易熔金属反应的纤维状金属材料5B的纤维状材料片5，其具有覆盖有能够与易熔金属形成合金的金属5C的外表面。也就是说，可以使用以下片：具有由不能与易熔金属形成合金的金属材料5B(例如，Cr等)制成的中心部和环绕中心部的外部的纤维状材料片5，所述外部包含利用包含能够与易熔金属形成合金的金属材料5C的复合材料制备的纤维状材料5X。作为一个替代方案，例如，可以使用以下片：包含纤维状树脂材料5B的纤维状材料片5，其具有覆盖有能够与易熔金属形成合金的金属5C的外表面。也就是说，可以使用以下片：具有由金属材料5B制成的中心部和环绕中心部的外部的片5，所述外部包含利用包含能够与易熔金属形成合金的金属材料5C的复合材料制备的纤维状材料5X。例如，可以使用以下片：包含纤维状玻璃材料5B的纤维状材料片5，其具有覆盖有能够与易熔金属形成合金的金属5C的外表面。也就是说，可以使用以下片：具有由玻璃材料5B制成的中心部和环绕中心部的外部的纤维状材料片5，所述外部包含利用包含能够与易熔金属形成合金的金属材料5C的复合材料制备的纤维状材料5X。换言之，可以使用以下片：具有由不能与易熔金属形成合金的材料5B制成的中心部和环绕中心部的外部的纤维状材料片5，所述外部包含利用包含能够与易熔金属形成合金的金属材料5C的复合材料制备的纤维状材料5X。这种包含利用复合材料制备的纤维状材料5X的纤维状材料片5可以以如下方式制备：例如，通过非电解镀覆过程或金属气相沉积过程，在组成片5的纤维状材料(不与易熔金属反应的纤维状金属材料、纤维状树脂材料或纤维状玻璃材料)5B的外表面上形成金属层5C。
在使用包含具有至少一个具有金属5C的外表面的纤维状材料5B(5X)的片5制造半导体器件的情况下，所得半导体器件包含载台2、置于载台2上的半导体芯片1以及接合层3。接合层3包含易熔金属和具有至少一个具有金属5C的外表面的纤维状材料5B(5X)，并且将载台2和半导体芯片1接合在一起。
在使用例如包含具有覆盖有金属5C的外表面的纤维状树脂材料5B的片5的情况下，接合层3包含易熔金属和具有覆盖有金属5C的外表面的纤维状树脂材料(纤维状材料)5B。在使用例如包含具有覆盖有金属5C的外表的纤维状玻璃材料5B的纤维状材料片5的情况下，接合层3包含易熔金属和具有覆盖有金属5C的外表面的纤维状玻璃材料(纤维状材料)5B。
特别地，在使用例如包含具有带有能够与易熔金属形成合金的金属5C的外表面的纤维状材料5B(5X)的片5的情况下，接合层3包含易熔金属和金属5C(即组成纤维状材料的金属)的合金并且还包含纤维状材料5B。
作为一个替代方案，在使用例如包含不与易熔金属反应的纤维状金属材料5B且具有覆盖有能够与易熔金属形成合金的金属5C的外表面的纤维状材料片5的情况下，接合层3包含易熔金属与金属5C(即组成纤维状材料的金属)的合金并且还包含不与易熔金属反应的纤维状金属材料5B。在使用例如包含具有覆盖有能够与易熔金属形成合金的金属5C的外表面的纤维状树脂材料5B的纤维状材料片5的情况下，接合层3包含易熔金属与金属5C(也就是说，组成纤维状材料的金属)的合金并且还包含纤维状树脂材料5B(纤维状材料)。在使用例如包含具有覆盖有能够与易熔金属形成合金的金属5C的外表面的纤维状玻璃材料5B的片5的情况下，接合层3包含易熔金属与金属5C(即组成纤维状材料的金属)的合金并且还包含纤维状玻璃材料5B(纤维状材料)。
在由导热粘合剂形成接合层3的情况下，所述制造的半导体器件的接合层3还包含树脂。
在使用不与易熔金属反应的纤维状金属材料(例如，Cr等)、纤维状树脂材料或纤维状玻璃材料作为纤维状材料5B的情况下，纤维状材料5B保留在接合层3中，如图9所示。保留在接合层3中的纤维状材料5B可以减小由于导体芯片1与引线框的载台2之间的热膨胀差引起的应力，并因此可以提高半导体器件的可靠性。也就是说，使用不与易熔金属反应的纤维状金属材料(例如，Cr等)或纤维状树脂材料允许减小由于半导体芯片1与引线框的载台2之间的热膨胀差引起的应力，其原因是纤维状金属材料与纤维状树脂材料具有低弹性模量。作为一个替代方案，当纤维状玻璃材料具有介于组成半导体芯片1的材料与组成引线框的载台2的材料之间的热膨胀系数时，使用纤维状玻璃材料允许减轻由于半导体芯片1与引线框的载台2之间的热膨胀差引起的应力或者减轻施加到半导体芯片1与引线框的载台2之间的界面的应力。
实际上，半导体封装利用通过使用这种复合材料制备的纤维状材料片5来制备，而在对比实施例中半导体封装没有用纤维状材料片5来制备。对这些半导体封装进行评价，从而得到以下结果。
使用复合材料制备的纤维状材料片5具有约4.5mm×约7mm的尺寸，并且是包含利用复合材料制备的纤维状材料5X的片，并且每一片具有由环氧树脂5B制成的中心部和由铜(Cu)5C制成的、环绕中心部的外部。在实施例和对比实施例中，使用Sn-Ag-Cu焊膏来形成接合层3并且在约250℃的最高温度下进行回流。
对于没有用纤维状材料片5制备的半导体封装，100个样品中有8个样品出现了由于半导体芯片1的位移引起的引线接合失效。相比之下，对于用纤维状材料片5制备的半导体封装，100个样品中均没有出现由于半导体芯片1的位移引起的引线接合失效。
通过使用约200℃的恒温室来模拟器件操作温度，使利用纤维状材料片5制备的半导体封装和没有用纤维状材料5制备的半导体封装经受高温存储测试。结果，在接近Sn-Ag-Cu焊料熔点的约200℃下，没有用纤维状材料片5制备的半导体封装中出现了由于模制化合物7的分层引起的失效；但是，用纤维状材料片5制备的半导体封装没有出现由于分层引起的失效。
在横截面图中观测利用纤维状材料片5制备的半导体封装和没有用纤维状材料片5制备的半导体封装，并且分析接合层3中的元素。结果证实：在利用纤维状材料片5制备的半导体封装中存在作为Sn-Cu合金中的稳定物质的Cu6Sn5，并且组成纤维状材料片5的、包含环氧树脂的约6μm纤维状材料5B保持不反应。
此外，为了评价用纤维状材料片5制备的半导体封装和没有用纤维状材料片5制备的半导体封装的可靠性，进行了温度循环试验。温度循环试验的条件如下：将每个半导体封装在约-55℃和125℃下保持约15分钟并且在约25℃下保持约5分钟。结果，对于没有用纤维状材料片5制备的半导体封装，在500次循环之后，在200个样品中有16个样品产生了缺陷；但是，对于用纤维状材料片5制备的半导体封装，200个样品均没有产生缺陷。
在上面的实施方案中，举例说明了分立封装。上面的实施方案不局限于分立封装，而是可以使用另一种类型的半导体封装。在上面的实施方案中，使用引线框制造半导体器件。因此，所制造的半导体器件包括置于引线框的载台2上的半导体芯片1。半导体器件不限于这种构造。在上面的实施方案中，举例说明了半导体封装。上面的实施方案不限于这种半导体封装。本实施方案可以应用于例如包括置于电路板如封装板或印制板(线路板)上的半导体芯片1的半导体器件。在这种情况下，电路板的半导体芯片安装区域使用例如Cu-Ni-Au、Cu、Cu-Au、Cu-Ag、Cu-Ni-Pd-Au等金属化。电路板如封装板或印制板也称为基板。
现在参考图10描述根据第二实施方案的电源装置。
根据该实施方案的电源装置包括具有上述GaN-HEMT的半导体封装。
下面举例说明在包含在用于服务器的电源装置中的功率因数校正(PFC)电路中使用包含在半导体封装中的GaN-HEMT的情况。
参考图10，PFC电路包括：二极管电桥30；扼流线圈31；第一电容器32；包含在半导体封装中的GaN-HEMT 33；二极管34；和第二电容器35。
PFC电路具有如下构造：在该构造中二极管电桥30；扼流线圈31；第一电容器32；包含在半导体封装中的GaN-HEMT 33；二极管34；和第二电容器35安装在电路板上。
在该实施方案中，半导体封装包含分别插入并且通过例如焊接等固定至电路板的漏极引线插入部分、源极引线插入部分和栅极引线插入部分的漏极引线23、漏极引线22和栅极引线21。PFC电路设置在如上所述的电路板上并且耦接到包含在半导体封装中的GaN-HEMT 33。
在PFC电路中，扼流线圈31的一个端子和二极管34的阳极端子耦接到GaN-HEMT 33的漏电极D。第一电容器32的一个端子耦接到扼流线圈31的另一端子。第二电容器35的一个端子耦接到二极管34的另一端子。第一电容器32的另一端子、GaN-HEMT 33的源电极S和第二电容器35的另一端子接地。二极管电桥30的一对端子耦接到第一电容器32的两个端子。二极管电桥30的另一对端子耦接到施加有交流(AC)电压的输入端。第二电容器35的两个端子耦接到输出直流(DC)电压的输出端。栅极驱动器(未示出)耦接到GaN-HEMT 33的栅电极G。在PFC电路中，GaN-HEMT 33由栅极驱动器驱动，从而将从输入端输入的AC电压转换成从输出端输出的DC电压。
因此，根据本实施方案的电源装置的优点是可以提高可靠性。由于使用了在第一实施方案或修改方案中描述的具有高可靠性的半导体封装，所以具有可以构造高可靠性电源装置的优点。
本文中举例说明了在包含在用于服务器的电源装置中的PFC电路中使用半导体器件(GaN-HEMT或包含GaN-HEMT的半导体封装)的情况。半导体器件不限于这种应用。除了服务器，半导体器件(GaN-HEMT或包含GaN-HEMT的半导体封装)还可以用于例如电子仪器(电子设备)，如计算机。半导体器件(半导体封装)可以用于包含在电源装置中的其他电路(例如，DC-DC转换器等)。
本公开内容不局限于上述实施方案或修改方案，而是可以在不背离本公开内容的范围的情况下进行各种变化。
在上面的每种实施方案或修改中，举例说明了包含GaN-HEMT的半导体芯片。半导体芯片不限于这种构造。
本文中所叙述的所有实施例和条件语言意在用于教示目的，以帮助读者理解本发明以及由本发明人贡献的概念，以促进本领域的发展，并且，本文中所叙述的所有实施例和条件语言将解释为不限于这种具体叙述的实施例和条件，说明书中的这种实施例的组织也不涉及描述本发明的优势和劣势。尽管已详细描述了本发明的实施方案，但应当理解，可以在不偏离本发明的精神和范围的情况下对本发明的实施方案进行各种变化、置换和替换。

Claims (20)

1.一种用于制造半导体器件的方法，包括：
将包含具有至少一个具有金属的外表面的纤维状材料的片置于基板的半导体芯片安装区域上；
在所述半导体芯片安装区域上形成包含易熔金属的接合层；
将半导体芯片置于所述半导体芯片安装区域上；以及
通过加热利用所述包含易熔金属的接合层将所述半导体芯片接合到所述半导体芯片安装区域。
2.根据权利要求1所述的方法，其中所述片具有与所述半导体芯片的面积基本相等的面积。
3.根据权利要求1所述的方法，其中所述片包含具有至少一个具有能够与所述易熔金属形成合金的金属的外表面的纤维状材料。
4.根据权利要求1所述的方法，其中所述片由纤维状金属材料制成。
5.根据权利要求1所述的方法，其中所述片由能够与所述易熔金属形成合金的纤维状金属材料制成。
6.根据权利要求1所述的方法，其中所述片由纤维状金属材料制成，所述纤维状金属材料具有覆盖有能够与所述易熔金属形成合金的金属的外表面并且不与所述易熔金属反应。
7.根据权利要求1所述的方法，其中所述片由具有覆盖有金属的外表面的纤维状树脂材料制成。
8.根据权利要求1所述的方法，其中所述片由具有覆盖有金属的外表面的纤维状玻璃材料制成。
9.根据权利要求1所述的方法，其中所述包含易熔金属的接合层是包含片状易熔金属的层。
10.根据权利要求1所述的方法，其中所述包含易熔金属的接合层是包含膏状易熔金属的层。
11.根据权利要求1所述的方法，其中所述包含易熔金属的接合层是包含导热粘合剂的层，所述导热粘合剂包含易熔金属和树脂。
12.根据权利要求1所述的方法，还包括用超声波将所述片暂时接合到所述半导体芯片安装区域。
13.根据权利要求9所述的方法，还包括：
在所述片上方形成所述包含片状易熔金属的层；以及
用超声波将所述片和所述包含片状易熔金属的层暂时接合到所述半导体芯片安装区域。
14.根据权利要求1所述的方法，还包括在所述包含易熔金属的接合层是包含片状易熔金属的层时用熔剂浸渍所述片。
15.一种半导体器件，包括：
基板；
置于所述基板上的半导体芯片；和
接合层，所述接合层包含易熔金属和纤维状材料并且将所述基板和所述半导体芯片接合在一起。
16.根据权利要求15所述的半导体器件，其中所述接合层包含所述易熔金属与金属的合金以及纤维状材料。
17.根据权利要求15所述的半导体器件，其中所述接合层包含所述易熔金属与金属的合金以及纤维状金属材料。
18.根据权利要求15所述的半导体器件，其中所述接合层包含所述易熔金属与金属的合金以及纤维状树脂材料。
19.根据权利要求15所述的半导体器件，其中所述接合层包含所述易熔金属与金属的合金以及纤维状玻璃材料。
20.一种电源装置，包括：
基板；
置于所述基板上的半导体芯片；和
半导体装置，所述半导体器件包括接合层，所述接合层包含易熔金属和纤维状材料并且将所述基板和所述半导体芯片接合在一起。
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