CN102623285A - 等离子体蚀刻用硅电极板 - Google Patents

等离子体蚀刻用硅电极板 Download PDF

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Publication number
CN102623285A
CN102623285A CN2011104153549A CN201110415354A CN102623285A CN 102623285 A CN102623285 A CN 102623285A CN 2011104153549 A CN2011104153549 A CN 2011104153549A CN 201110415354 A CN201110415354 A CN 201110415354A CN 102623285 A CN102623285 A CN 102623285A
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CN
China
Prior art keywords
electrode plate
plasma etching
silicon
silicon electrode
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011104153549A
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English (en)
Chinese (zh)
Inventor
米久孝志
高畠康太
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Corp
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Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Publication of CN102623285A publication Critical patent/CN102623285A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/3255—Material

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN2011104153549A 2011-01-31 2011-12-13 等离子体蚀刻用硅电极板 Pending CN102623285A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011-019180 2011-01-31
JP2011019180A JP5713182B2 (ja) 2011-01-31 2011-01-31 プラズマエッチング用シリコン電極板

Publications (1)

Publication Number Publication Date
CN102623285A true CN102623285A (zh) 2012-08-01

Family

ID=46563133

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011104153549A Pending CN102623285A (zh) 2011-01-31 2011-12-13 等离子体蚀刻用硅电极板

Country Status (5)

Country Link
US (1) US20120193030A1 (ko)
JP (1) JP5713182B2 (ko)
KR (1) KR101926859B1 (ko)
CN (1) CN102623285A (ko)
TW (1) TWI547981B (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103903952A (zh) * 2012-12-27 2014-07-02 三菱综合材料株式会社 等离子蚀刻装置用硅部件及其制造方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5630710B2 (ja) * 2011-01-31 2014-11-26 三菱マテリアル株式会社 プラズマエッチング用シリコン電極板
JP6766678B2 (ja) * 2017-02-17 2020-10-14 三菱マテリアル株式会社 プラズマ処理装置用電極板及びその製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54149463A (en) * 1978-05-15 1979-11-22 Matsushita Electric Ind Co Ltd Selective diffusion method aluminum
JPH08250488A (ja) * 1995-01-13 1996-09-27 Seiko Epson Corp プラズマ処理装置及びその方法
JP3728021B2 (ja) * 1996-06-28 2005-12-21 日清紡績株式会社 プラズマエッチング電極及びその製造方法
JP2000138206A (ja) * 1998-11-04 2000-05-16 Mitsubishi Materials Corp 均一なエッチング面の形成を可能とするプラズマエッチング装置の電極板
FR2803090B1 (fr) * 1999-12-22 2003-07-11 St Microelectronics Sa Procede d'implantation d'aluminium
JP3411539B2 (ja) * 2000-03-06 2003-06-03 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法
US20020127853A1 (en) * 2000-12-29 2002-09-12 Hubacek Jerome S. Electrode for plasma processes and method for manufacture and use thereof
JP4862221B2 (ja) * 2001-04-03 2012-01-25 信越半導体株式会社 ｎ型シリコン単結晶ウェーハ及びその製造方法
JP2003051491A (ja) * 2001-08-03 2003-02-21 Mitsubishi Materials Corp プラズマエッチング装置用電極板
JP3868341B2 (ja) * 2002-04-22 2007-01-17 日清紡績株式会社 耐熱性に優れたプラズマエッチング電極及びそれを装着したドライエッチング装置
JP4403919B2 (ja) * 2004-04-01 2010-01-27 株式会社Ｓｕｍｃｏ 耐久性に優れたプラズマエッチング用シリコン電極板
JP4832067B2 (ja) * 2005-02-01 2011-12-07 東京エレクトロン株式会社 シリコン部材およびその製造方法
JP2009018967A (ja) * 2007-07-12 2009-01-29 Sharp Corp 固体原料融解方法および結晶成長方法
JP2009188173A (ja) * 2008-02-06 2009-08-20 Tokyo Electron Ltd 基板処理方法及び基板処理装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103903952A (zh) * 2012-12-27 2014-07-02 三菱综合材料株式会社 等离子蚀刻装置用硅部件及其制造方法
CN103903952B (zh) * 2012-12-27 2017-10-10 三菱综合材料株式会社 等离子蚀刻装置用硅部件及其制造方法

Also Published As

Publication number Publication date
JP5713182B2 (ja) 2015-05-07
JP2012160570A (ja) 2012-08-23
KR101926859B1 (ko) 2018-12-07
KR20120088595A (ko) 2012-08-08
US20120193030A1 (en) 2012-08-02
TW201241889A (en) 2012-10-16
TWI547981B (zh) 2016-09-01

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Application publication date: 20120801