CN102615068B - Mocvd设备的清洁方法 - Google Patents
Mocvd设备的清洁方法 Download PDFInfo
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- CN102615068B CN102615068B CN201210082876.6A CN201210082876A CN102615068B CN 102615068 B CN102615068 B CN 102615068B CN 201210082876 A CN201210082876 A CN 201210082876A CN 102615068 B CN102615068 B CN 102615068B
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- reaction chamber
- clean air
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- plasma
- mocvd
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- 238000004140 cleaning Methods 0.000 title claims abstract description 47
- 238000000034 method Methods 0.000 title claims abstract description 39
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 title claims description 71
- 238000006243 chemical reaction Methods 0.000 claims abstract description 125
- 239000007921 spray Substances 0.000 claims description 52
- 238000001816 cooling Methods 0.000 claims description 16
- 239000007788 liquid Substances 0.000 claims description 15
- 230000008878 coupling Effects 0.000 claims description 10
- 238000010168 coupling process Methods 0.000 claims description 10
- 238000005859 coupling reaction Methods 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 150000003839 salts Chemical class 0.000 claims description 3
- 229920002545 silicone oil Polymers 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 239000013049 sediment Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 47
- 239000000758 substrate Substances 0.000 description 22
- 239000010408 film Substances 0.000 description 14
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 9
- 230000006978 adaptation Effects 0.000 description 8
- 230000005684 electric field Effects 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 230000000630 rising effect Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000003595 mist Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210082876.6A CN102615068B (zh) | 2012-03-26 | 2012-03-26 | Mocvd设备的清洁方法 |
| TW101151274A TW201346059A (zh) | 2012-03-26 | 2012-12-28 | 一種ｍｏｃｖｄ設備的清潔方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210082876.6A CN102615068B (zh) | 2012-03-26 | 2012-03-26 | Mocvd设备的清洁方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102615068A CN102615068A (zh) | 2012-08-01 |
| CN102615068B true CN102615068B (zh) | 2015-05-20 |
Family
ID=46555472
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210082876.6A Active CN102615068B (zh) | 2012-03-26 | 2012-03-26 | Mocvd设备的清洁方法 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102615068B (enExample) |
| TW (1) | TW201346059A (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103938177B (zh) * | 2014-05-07 | 2015-12-30 | 南昌黄绿照明有限公司 | 可用氯气在线清洗的非钎焊mocvd喷头 |
| CN105986242B (zh) * | 2015-02-16 | 2018-07-13 | 中微半导体设备(上海)有限公司 | 化学气相沉积装置与基片处理方法 |
| CN114540794A (zh) * | 2017-04-14 | 2022-05-27 | 西安德盟特半导体科技有限公司 | 一种去除cvd反应腔体内壁沉积膜的方法及装置 |
| US20220372613A1 (en) * | 2019-09-27 | 2022-11-24 | Vieworks Co., Ltd. | Substrate fixing device for scintillator deposition, substrate deposition apparatus including the same, and method of depositing a scintillator using the same |
| CN118874932B (zh) * | 2024-08-28 | 2025-03-25 | 江苏凯威特斯半导体科技有限公司 | 一种针对半导体化学气相沉积喷淋头的清洗方法 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101063197A (zh) * | 2006-04-29 | 2007-10-31 | 联华电子股份有限公司 | 化学气相沉积设备的清洁方法 |
| CN101205607A (zh) * | 2006-12-14 | 2008-06-25 | 应用材料股份有限公司 | 增加等离子体增强化学气相沉积电介质薄膜压应力的方法 |
| CN101238238A (zh) * | 2005-08-02 | 2008-08-06 | 麻省理工学院 | 使用氟化硫从cvd/pecvd腔的内部除去表面沉积物的远程腔方法 |
| CN101278072A (zh) * | 2005-08-02 | 2008-10-01 | 麻省理工学院 | 使用nf3除去表面沉积物的方法 |
| CN101292059A (zh) * | 2005-10-17 | 2008-10-22 | Oc欧瑞康巴尔斯公司 | 用于利用远程等离子体源的大面积等离子体增强化学气相沉积装置的清洗器具 |
| CN101437981A (zh) * | 2004-12-21 | 2009-05-20 | 应用材料股份有限公司 | 用于消除来自化学蒸汽刻蚀腔的副产品沉积的原位腔清洁制程 |
| CN101535525A (zh) * | 2006-05-16 | 2009-09-16 | 应用材料股份有限公司 | Cvd系统排气口的原位清洗 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8183132B2 (en) * | 2009-04-10 | 2012-05-22 | Applied Materials, Inc. | Methods for fabricating group III nitride structures with a cluster tool |
-
2012
- 2012-03-26 CN CN201210082876.6A patent/CN102615068B/zh active Active
- 2012-12-28 TW TW101151274A patent/TW201346059A/zh unknown
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101437981A (zh) * | 2004-12-21 | 2009-05-20 | 应用材料股份有限公司 | 用于消除来自化学蒸汽刻蚀腔的副产品沉积的原位腔清洁制程 |
| CN101238238A (zh) * | 2005-08-02 | 2008-08-06 | 麻省理工学院 | 使用氟化硫从cvd/pecvd腔的内部除去表面沉积物的远程腔方法 |
| CN101278072A (zh) * | 2005-08-02 | 2008-10-01 | 麻省理工学院 | 使用nf3除去表面沉积物的方法 |
| CN101292059A (zh) * | 2005-10-17 | 2008-10-22 | Oc欧瑞康巴尔斯公司 | 用于利用远程等离子体源的大面积等离子体增强化学气相沉积装置的清洗器具 |
| CN101063197A (zh) * | 2006-04-29 | 2007-10-31 | 联华电子股份有限公司 | 化学气相沉积设备的清洁方法 |
| CN101535525A (zh) * | 2006-05-16 | 2009-09-16 | 应用材料股份有限公司 | Cvd系统排气口的原位清洗 |
| CN101205607A (zh) * | 2006-12-14 | 2008-06-25 | 应用材料股份有限公司 | 增加等离子体增强化学气相沉积电介质薄膜压应力的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201346059A (zh) | 2013-11-16 |
| CN102615068A (zh) | 2012-08-01 |
| TWI458853B (enExample) | 2014-11-01 |
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| CP01 | Change in the name or title of a patent holder |
Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
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| CP01 | Change in the name or title of a patent holder |