TW201346059A - 一種mocvd設備的清潔方法 - Google Patents

一種mocvd設備的清潔方法 Download PDF

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Publication number
TW201346059A
TW201346059A TW101151274A TW101151274A TW201346059A TW 201346059 A TW201346059 A TW 201346059A TW 101151274 A TW101151274 A TW 101151274A TW 101151274 A TW101151274 A TW 101151274A TW 201346059 A TW201346059 A TW 201346059A
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Taiwan
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reaction chamber
cleaning
gas
plasma
wall
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TW101151274A
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English (en)
Chinese (zh)
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TWI458853B (enExample
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尹志堯
杜志游
孟雙
朱班
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中微半導體設備(上海)有限公司
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  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
TW101151274A 2012-03-26 2012-12-28 一種mocvd設備的清潔方法 TW201346059A (zh)

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CN201210082876.6A CN102615068B (zh) 2012-03-26 2012-03-26 Mocvd设备的清洁方法

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TW201346059A true TW201346059A (zh) 2013-11-16
TWI458853B TWI458853B (enExample) 2014-11-01

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103938177B (zh) * 2014-05-07 2015-12-30 南昌黄绿照明有限公司 可用氯气在线清洗的非钎焊mocvd喷头
CN105986242B (zh) * 2015-02-16 2018-07-13 中微半导体设备(上海)有限公司 化学气相沉积装置与基片处理方法
CN114540794A (zh) * 2017-04-14 2022-05-27 西安德盟特半导体科技有限公司 一种去除cvd反应腔体内壁沉积膜的方法及装置
US20220372613A1 (en) * 2019-09-27 2022-11-24 Vieworks Co., Ltd. Substrate fixing device for scintillator deposition, substrate deposition apparatus including the same, and method of depositing a scintillator using the same
CN118874932B (zh) * 2024-08-28 2025-03-25 江苏凯威特斯半导体科技有限公司 一种针对半导体化学气相沉积喷淋头的清洗方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060130971A1 (en) * 2004-12-21 2006-06-22 Applied Materials, Inc. Apparatus for generating plasma by RF power
RU2008108010A (ru) * 2005-08-02 2009-09-10 Массачусетс Инститьют Оф Текнолоджи (Us) Способ применения фторида серы для удаления поверхностных отложений
WO2007016631A1 (en) * 2005-08-02 2007-02-08 Massachusetts Institute Of Technology Method of using nf3 for removing surface deposits
WO2007045110A2 (en) * 2005-10-17 2007-04-26 Oc Oerlikon Balzers Ag Cleaning means for large area pecvd devices using a remote plasma source
CN100549226C (zh) * 2006-04-29 2009-10-14 联华电子股份有限公司 化学气相沉积设备的清洁方法
US20070267143A1 (en) * 2006-05-16 2007-11-22 Applied Materials, Inc. In situ cleaning of CVD system exhaust
US7790635B2 (en) * 2006-12-14 2010-09-07 Applied Materials, Inc. Method to increase the compressive stress of PECVD dielectric films
US8183132B2 (en) * 2009-04-10 2012-05-22 Applied Materials, Inc. Methods for fabricating group III nitride structures with a cluster tool

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CN102615068B (zh) 2015-05-20
CN102615068A (zh) 2012-08-01
TWI458853B (enExample) 2014-11-01

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