CN102612748A - 使用牺牲材料制造大马士革二极管的方法 - Google Patents
使用牺牲材料制造大马士革二极管的方法 Download PDFInfo
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- CN102612748A CN102612748A CN2010800408595A CN201080040859A CN102612748A CN 102612748 A CN102612748 A CN 102612748A CN 2010800408595 A CN2010800408595 A CN 2010800408595A CN 201080040859 A CN201080040859 A CN 201080040859A CN 102612748 A CN102612748 A CN 102612748A
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
- H01L27/1021—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including diodes only
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- H10N70/20—Multistable switching devices, e.g. memristors
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
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- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
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- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
- H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
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- H10N70/061—Shaping switching materials
- H10N70/066—Shaping switching materials by filling of openings, e.g. damascene method
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- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
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- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
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- H10N70/883—Oxides or nitrides
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
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- H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
- H10N70/8845—Carbon or carbides
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- Chemical & Material Sciences (AREA)
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- Semiconductor Memories (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
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Abstract
Description
Claims (26)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/458,543 US7927977B2 (en) | 2009-07-15 | 2009-07-15 | Method of making damascene diodes using sacrificial material |
US12/458,543 | 2009-07-15 | ||
PCT/US2010/041836 WO2011008767A2 (en) | 2009-07-15 | 2010-07-13 | Method of making damascene diodes using sacrificial material |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102612748A true CN102612748A (zh) | 2012-07-25 |
CN102612748B CN102612748B (zh) | 2015-06-10 |
Family
ID=43349430
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201080040859.5A Expired - Fee Related CN102612748B (zh) | 2009-07-15 | 2010-07-13 | 使用牺牲材料制造大马士革二极管的方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7927977B2 (zh) |
EP (1) | EP2454754A2 (zh) |
JP (1) | JP2012533885A (zh) |
KR (1) | KR20120062708A (zh) |
CN (1) | CN102612748B (zh) |
TW (1) | TW201133635A (zh) |
WO (1) | WO2011008767A2 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN104752323A (zh) * | 2013-12-27 | 2015-07-01 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制备方法 |
CN105609471A (zh) * | 2014-11-14 | 2016-05-25 | 朗姆研究公司 | 用于垂直nand孔蚀刻的镀覆金属硬掩模 |
CN111326677A (zh) * | 2020-03-09 | 2020-06-23 | 京东方科技集团股份有限公司 | 显示装置、显示面板及显示基板的封装方法 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8105884B2 (en) * | 2008-10-06 | 2012-01-31 | Samsung Electronics Co., Ltd. | Cross point memory arrays, methods of manufacturing the same, masters for imprint processes, and methods of manufacturing masters |
US8586962B2 (en) | 2008-10-06 | 2013-11-19 | Samsung Electronics Co., Ltd. | Cross point memory arrays, methods of manufacturing the same, masters for imprint processes, and methods of manufacturing masters |
US8148230B2 (en) * | 2009-07-15 | 2012-04-03 | Sandisk 3D Llc | Method of making damascene diodes using selective etching methods |
US8394682B2 (en) * | 2011-07-26 | 2013-03-12 | Micron Technology, Inc. | Methods of forming graphene-containing switches |
US8313959B1 (en) | 2011-08-17 | 2012-11-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Hole first hardmask definition |
KR20130043533A (ko) * | 2011-10-20 | 2013-04-30 | 삼성전자주식회사 | 도전성 버퍼 패턴을 갖는 비-휘발성 메모리소자 및 그 형성 방법 |
KR101585358B1 (ko) | 2011-12-12 | 2016-01-13 | 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피. | 멤리스터 및 제조 방법 |
US8658463B2 (en) | 2012-07-30 | 2014-02-25 | Hewlett-Packard Development Company, L.P. | Memristor with embedded switching layer |
US9691981B2 (en) | 2013-05-22 | 2017-06-27 | Micron Technology, Inc. | Memory cell structures |
WO2014209285A1 (en) * | 2013-06-25 | 2014-12-31 | Intel Corporation | Cmos-compatible polycide fuse structure and method of fabricating same |
KR102174336B1 (ko) | 2014-07-08 | 2020-11-04 | 삼성전자주식회사 | 반도체 패키지 및 그 제조 방법 |
US10468596B2 (en) | 2018-02-21 | 2019-11-05 | Sandisk Technologies Llc | Damascene process for forming three-dimensional cross rail phase change memory devices |
US10692759B2 (en) * | 2018-07-17 | 2020-06-23 | Applied Materials, Inc. | Methods for manufacturing an interconnect structure for semiconductor devices |
JP7304721B2 (ja) * | 2019-03-18 | 2023-07-07 | 東京エレクトロン株式会社 | 半導体装置およびその製造方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1393937A (zh) * | 2001-06-26 | 2003-01-29 | 富士通株式会社 | 半导体器件及其制造方法 |
US20050242386A1 (en) * | 2004-04-29 | 2005-11-03 | Kern-Huat Ang | Memory cell and method of fabricating the same |
US20060258076A1 (en) * | 2005-04-08 | 2006-11-16 | Kabushiki Kaisha Toshiba | Method of manufacturing non-volatile semiconductor memory |
US20080113469A1 (en) * | 2006-11-09 | 2008-05-15 | Samsung Electronics Co., Ltd. | Methods of fabricating a semiconductor device including a self-aligned cell diode |
WO2009005700A2 (en) * | 2007-06-29 | 2009-01-08 | Sandisk 3D, Llc | Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1582404A (en) | 1924-09-27 | 1926-04-27 | Edwin F Hurst | Dehydrator for petroleum emulsions |
JPH0467671A (ja) | 1990-07-09 | 1992-03-03 | Matsushita Electron Corp | 半導体装置の製造方法 |
JPH06334139A (ja) | 1993-05-18 | 1994-12-02 | Sony Corp | 読出し専用メモリとその製造方法 |
US5831276A (en) * | 1995-06-07 | 1998-11-03 | Micron Technology, Inc. | Three-dimensional container diode for use with multi-state material in a non-volatile memory cell |
US6750091B1 (en) * | 1996-03-01 | 2004-06-15 | Micron Technology | Diode formation method |
TW377496B (en) * | 1997-01-15 | 1999-12-21 | United Microelectronics Corp | Method of manufacturing read-only memory structure |
TW312851B (en) * | 1997-02-03 | 1997-08-11 | United Microelectronics Corp | Manufacturing method of read only memory by silicon on insulator process |
US5915167A (en) * | 1997-04-04 | 1999-06-22 | Elm Technology Corporation | Three dimensional structure memory |
FR2823010B1 (fr) * | 2001-04-02 | 2003-08-15 | St Microelectronics Sa | Procede de fabrication d'un transistor vertical a grille isolee a quadruple canal de conduction, et circuit integre comportant un tel transistor |
JP4235440B2 (ja) * | 2002-12-13 | 2009-03-11 | キヤノン株式会社 | 半導体デバイスアレイ及びその製造方法 |
US7176064B2 (en) * | 2003-12-03 | 2007-02-13 | Sandisk 3D Llc | Memory cell comprising a semiconductor junction diode crystallized adjacent to a silicide |
US7285464B2 (en) * | 2002-12-19 | 2007-10-23 | Sandisk 3D Llc | Nonvolatile memory cell comprising a reduced height vertical diode |
US8637366B2 (en) * | 2002-12-19 | 2014-01-28 | Sandisk 3D Llc | Nonvolatile memory cell without a dielectric antifuse having high- and low-impedance states |
US7618850B2 (en) * | 2002-12-19 | 2009-11-17 | Sandisk 3D Llc | Method of making a diode read/write memory cell in a programmed state |
JP2006511965A (ja) * | 2002-12-19 | 2006-04-06 | マトリックス セミコンダクター インコーポレイテッド | 高密度不揮発性メモリを製作するための改良された方法 |
US7800932B2 (en) * | 2005-09-28 | 2010-09-21 | Sandisk 3D Llc | Memory cell comprising switchable semiconductor memory element with trimmable resistance |
US6890819B2 (en) * | 2003-09-18 | 2005-05-10 | Macronix International Co., Ltd. | Methods for forming PN junction, one-time programmable read-only memory and fabricating processes thereof |
US7405465B2 (en) | 2004-09-29 | 2008-07-29 | Sandisk 3D Llc | Deposited semiconductor structure to minimize n-type dopant diffusion and method of making |
KR100689831B1 (ko) * | 2005-06-20 | 2007-03-08 | 삼성전자주식회사 | 서로 자기정렬된 셀 다이오드 및 하부전극을 갖는 상변이기억 셀들 및 그 제조방법들 |
US7678420B2 (en) * | 2005-06-22 | 2010-03-16 | Sandisk 3D Llc | Method of depositing germanium films |
KR100665227B1 (ko) | 2005-10-18 | 2007-01-09 | 삼성전자주식회사 | 상변화 메모리 장치 및 그 제조 방법 |
US7575984B2 (en) * | 2006-05-31 | 2009-08-18 | Sandisk 3D Llc | Conductive hard mask to protect patterned features during trench etch |
KR100766504B1 (ko) * | 2006-09-29 | 2007-10-15 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
KR100801084B1 (ko) * | 2007-01-08 | 2008-02-05 | 삼성전자주식회사 | 저항체를 이용한 비휘발성 메모리 장치 및 그 제조 방법 |
US7629247B2 (en) * | 2007-04-12 | 2009-12-08 | Sandisk 3D Llc | Method of fabricating a self-aligning damascene memory structure |
US7830697B2 (en) * | 2007-06-25 | 2010-11-09 | Sandisk 3D Llc | High forward current diodes for reverse write 3D cell |
KR20090012829A (ko) * | 2007-07-31 | 2009-02-04 | 삼성전자주식회사 | 상변화 메모리 소자 및 그 제조 방법 |
KR101448154B1 (ko) * | 2008-06-30 | 2014-10-08 | 삼성전자주식회사 | 반도체 소자의 게이트 전극의 형성 방법 |
-
2009
- 2009-07-15 US US12/458,543 patent/US7927977B2/en not_active Expired - Fee Related
-
2010
- 2010-07-13 CN CN201080040859.5A patent/CN102612748B/zh not_active Expired - Fee Related
- 2010-07-13 KR KR1020127003724A patent/KR20120062708A/ko not_active Application Discontinuation
- 2010-07-13 JP JP2012520722A patent/JP2012533885A/ja active Pending
- 2010-07-13 EP EP10734617A patent/EP2454754A2/en not_active Ceased
- 2010-07-13 WO PCT/US2010/041836 patent/WO2011008767A2/en active Application Filing
- 2010-07-15 TW TW099123333A patent/TW201133635A/zh unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1393937A (zh) * | 2001-06-26 | 2003-01-29 | 富士通株式会社 | 半导体器件及其制造方法 |
US20050242386A1 (en) * | 2004-04-29 | 2005-11-03 | Kern-Huat Ang | Memory cell and method of fabricating the same |
US20060258076A1 (en) * | 2005-04-08 | 2006-11-16 | Kabushiki Kaisha Toshiba | Method of manufacturing non-volatile semiconductor memory |
US20080113469A1 (en) * | 2006-11-09 | 2008-05-15 | Samsung Electronics Co., Ltd. | Methods of fabricating a semiconductor device including a self-aligned cell diode |
WO2009005700A2 (en) * | 2007-06-29 | 2009-01-08 | Sandisk 3D, Llc | Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104752323A (zh) * | 2013-12-27 | 2015-07-01 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制备方法 |
CN104752323B (zh) * | 2013-12-27 | 2018-03-20 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制备方法 |
CN105609471A (zh) * | 2014-11-14 | 2016-05-25 | 朗姆研究公司 | 用于垂直nand孔蚀刻的镀覆金属硬掩模 |
CN105609471B (zh) * | 2014-11-14 | 2019-05-28 | 朗姆研究公司 | 用于垂直nand孔蚀刻的镀覆金属硬掩模 |
CN111326677A (zh) * | 2020-03-09 | 2020-06-23 | 京东方科技集团股份有限公司 | 显示装置、显示面板及显示基板的封装方法 |
CN111326677B (zh) * | 2020-03-09 | 2023-05-26 | 京东方科技集团股份有限公司 | 显示装置、显示面板及显示基板的封装方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2011008767A2 (en) | 2011-01-20 |
US7927977B2 (en) | 2011-04-19 |
US20110014779A1 (en) | 2011-01-20 |
EP2454754A2 (en) | 2012-05-23 |
WO2011008767A3 (en) | 2011-12-29 |
TW201133635A (en) | 2011-10-01 |
JP2012533885A (ja) | 2012-12-27 |
KR20120062708A (ko) | 2012-06-14 |
CN102612748B (zh) | 2015-06-10 |
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