CN102598300A - 太阳能电池及其制造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 239000000463 material Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 12
- 229920005989 resin Polymers 0.000 claims description 11
- 239000011347 resin Substances 0.000 claims description 11
- -1 acryl Chemical group 0.000 claims description 7
- 239000004593 Epoxy Substances 0.000 claims description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 claims description 4
- 229920000647 polyepoxide Polymers 0.000 claims description 4
- 229920005749 polyurethane resin Polymers 0.000 claims description 4
- 239000005341 toughened glass Substances 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 238000004528 spin coating Methods 0.000 claims description 2
- 238000006116 polymerization reaction Methods 0.000 claims 1
- 239000011248 coating agent Substances 0.000 description 13
- 238000000576 coating method Methods 0.000 description 13
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- 239000011669 selenium Substances 0.000 description 7
- 239000011787 zinc oxide Substances 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 3
- 239000005038 ethylene vinyl acetate Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 3
- 229910052711 selenium Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- XUMBMVFBXHLACL-UHFFFAOYSA-N Melanin Chemical compound O=C1C(=O)C(C2=CNC3=C(C(C(=O)C4=C32)=O)C)=C2C4=CNC2=C1C XUMBMVFBXHLACL-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000005361 soda-lime glass Substances 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 229960001296 zinc oxide Drugs 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- UIPVMGDJUWUZEI-UHFFFAOYSA-N copper;selanylideneindium Chemical class [Cu].[In]=[Se] UIPVMGDJUWUZEI-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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Abstract
提供一种根据一个示例性实施例所述的太阳能电池,其包括:设置在该太阳能电池的电池单元上的上基底;以及设置在所述上基底上的全息图形。提供一种根据另一个示例性实施例所述的太阳能电池的制造方法,其包括:在该太阳能电池的电池单元上形成上基底;以及在所述上基底上形成全息图形。
Description
技术领域
示例性实施例涉及一种太阳能电池及其制造方法。
技术背景
近年来,随着对能量需求的增加,将太阳能转换成电能的太阳能电池得到了发展。
具体地说,CIGS-基太阳能电池得到了广泛的应用,这是一种具有基底结构的pn异质结器件,所述基底结构包括玻璃基底、金属后表面上的电极层、p-型CIGS-基光吸收层、高阻缓冲层、n-型窗口层。
此外,由于太阳能电池的光电转换效率得到了提高,许多包括太阳能发电模块的太阳能发电系统用于住宅,以及安装在商业建筑的外部。
太阳能电池的外表以及显示功能一直在提升,以便提高太阳能电池的美学功能。
发明内容
示例性实施例提供了一种能提供美感和装饰性的太阳能电池及其制造方法。
本发明的一个示例性实施例提供了一种太阳能电池,其包括:设置在该太阳能电池的电池单元上的上基底;以及设置在所述上基底上的全息图形。
本发明的另一个示例性实施例提供了一种太阳能电池的制备方法,其包括:在该太阳能电池的电池单元上形成上基底;以及在所述上基底上形成全息图形。
在根据示例性实施例所述的太阳能电池及其制造方法中,在上基底上形成全息图形层,并且由于在该全息图形层上所产生的干涉现象而产生了干涉图形,从而提供了美感和装饰性。
附图说明
图1至图7是剖视图和透视图,示出了一个示例性实施例所述的太阳能电池的制造方法。
具体实施方式
在示例性实施例的描述中,应该明白,当某一基底、层、膜、电极被称作是在某一层、膜或电极“之上”或“之下”时,“之上”和“之下”包括“直接地”或“间接地”。此外,每个元件的“之上”或“之下”将基于附图进行描述。每个元件的尺寸或许被放大,以便描述,它并不代表实际采用的尺寸。
图3是根据一个示例性实施例所述的太阳能电池的侧面剖视图,而图5是根据一个示例性实施例所述的太阳能电池的透视图。
所述示例性实施例中的太阳能电池包括后电极200、光吸收层300、缓冲层400、前电极500、透明树脂层600、上基底700、全息图形层800,如图3到图5所示。
通过在上基底700上形成全息图形成材料以及形成图形,可以形成全息图形层800。
所述全息图形成材料包括诸如环氧树脂(epoxy)、环氧三聚氰胺树脂(epoxy melanin)、压克力树脂(acryl)、或聚氨酯树脂(urethane resin)等单一材料或者混合型树脂,并可以由透明材料制成。
在全息图形层800中,四角锥形状的不平整图形810的曲线是周期性形成的,并且四角锥形状的不平整图形810可以在一个方向上延长。
然而,全息图形层800不限于四角锥形状的不平整图形810,并如图4所示,全息图形层800可以以正弦波图形820来周期性地形成,其中,全息图形层800的侧面是曲线状的。
四角锥形状的不平整图形810的宽度W1可以在80-150nm的范围内,四角锥形状的不平整图形810的高度可以在100-300nm的范围内,而四角锥形状的不平整图形810间的宽度W2可以在150到420nm的范围内。
就是说,四角锥形状的不平整图形810的曲线可以具有范围在300-500nm的周期。
全息图形层800形成在上基底700上,并且由于在全息图形层800中所产生的干涉现象之故产生了干涉图形,从而提供了美感和装饰性。
在此,将根据所述太阳能电池的制备方法来详细描述所述太阳能电池。
图1至图7是剖视图和透视图,示出了一个示例性实施例所述的太阳能电池的制造方法。
首先,如图1所示,在基底100上形成后电极200、光吸收层300、缓冲层400、前电极500。
使用玻璃作为基底100,并且可以使用陶瓷基底、金属基底、聚合物基底。
钠钙玻璃或高应变点钠玻璃可以用作所述玻璃基底,并且含有不锈钢或钛的基底可以用作所述金属基底。
更进一步而言,基底100可以是刚性的或是柔性的。
后电极200可以由金属等导体制成。
例如,可以通过使用钼靶的溅射过程形成后电极200。
这是为了获得钼(Mo)的高导电性、与所述光吸收层形成的欧姆结以及在硒(Se)环境下的高温稳定性。
钼(Mo)薄膜,即后电极200,作为一个电极应该具有低的电阻率,此外,应该在基底上有优异的粘合性以防止由于热膨胀系数的差别而导致的剥落现象。
另外,形成后电极200的材料不限于此,并可以包括铟锡氧化物(ITO)、钠(Na)、以及掺有离子的钼(Mo)。
进一步而言,后电极200可以由至少一层形成。
当后电极200由多层形成时,组成后电极200的这些层可以由不同的材料制成。
光吸收层300包括Ib-IIIB-VIb基化合物。
更具体而言,光吸收层300包括铜-铟-镓-硒化物基(Cu(In,Ga)Se2,CIGS基)化合物。
与之相反的是,光吸收层300包括一种铜-铟-硒化物基(CuInSe2,CIS基)CIGS基)化合物或是一种铜-镓-硒化物基(CuGaSe2,CIS基)化合物。
例如,为形成光吸收层300,通过使用铜靶、铟靶、镓靶在后电极200上形成CIG基金属前体层。
此后,通过硒化过程,使所述金属前体层和硒(Se)反应以形成CIGS基光吸收层300。
进一步而言,在所述形成金属前体层的过程和硒化过程中,基底100中所包含的碱组分穿过后电极图形200扩散到所述金属前体层和光吸收层300中。
所述碱组分能增大光吸收层300的颗粒尺寸并改善结晶性。
进一步而言,光吸收层300可以通过一起蒸发铜(Cu)、铟(In)、镓(Ga)和硒(Se)来形成。
光吸收层300接收外界光以便将接收到的外界光转化成电能。光吸收层300通过光电效应产生光伏电势(photovoltaic force)。
缓冲层400由至少一层形成,并且可以通过在具有光吸收层300的基底100上镀上硫化镉(CdS)、ITO、ZnO和i-ZnO中的任何一种或者层叠硫化镉(CdS)、ITO、ZnO和i-ZnO来形成。
在此种情况下,缓冲层400是n-型半导体层而光吸收层300是p-型半导体层。因此,光吸收层300和缓冲层400形成pn结。
缓冲层400被设置在光吸收层300和将在缓冲层400上形成的前电极之间。
也就是说,由于光吸收层300和所述前电极之间的晶格常数和能带间隙的差异很大,因此,在光吸收层300和所述前电极之间插入缓冲层400以获得优异的结,其中缓冲层400的带隙介于这两种材料的带隙之间。
在所述示例性实施例中,在光吸收层300上形成一个缓冲层,但所述缓冲层并不局限于此,所述缓冲层可以由多层形成。
前电极500可以由透明的导电层形成,并可以由包含诸如铝(Al)、氧化铝(Al2O3)、镁(MG)、镓(Ga)等夹杂物的锌基氧化物或者由氧化铟锡(ITO)制成。
作为窗口层与光吸收层300形成pn结的前电极500用作太阳能电池的前表面上的透明电极,因此,前电极500由具有高透明度和高电导率的材料制成。
在此种情形中,具有低阻值的电极可以通过用铝或氧化铝掺杂氧化锌来形成。
进一步而言,前电极500可以形成双层结构,其中,具有高电光特性的氧化铟锡(ITO)薄膜蒸发在氧化锌薄膜上。
另外,如图2所示,透明树脂层600和上基底700形成在前电极500上。
透明树脂层600可以由乙烯醋酸乙烯酯共聚物(ethylene vinyl acetatecopolymer,EVA)薄膜形成。
上基底700可以由低铁钢化玻璃或半钢化玻璃形成。
随后,如图3所示,在上基底700上形成全息图形层800。
由于干涉现象,在全息图形层800中产生干涉图形,而该干涉图形可以提供美感和装饰性。
全息图形层800可以通过用全息图形成材料涂覆上基底700以及之后在所述全息图形成材料中形成图形来形成。
所述全息图形成材料包括诸如环氧树脂、环氧三聚氰胺树脂、压克力树脂、聚氨酯树脂等单一材料或者混合型树脂,并且可以由透明材料来制备。
然而,全息图形层800不限于四角锥形状的不平整图形810,并且如图4所示,全息图形层800可以以正弦波图形820来形成,其中全息图形层800的侧面是曲线形的。
进一步而言,曲线形正弦波形820也可以周期性形成。
在此情形下,在图形形成方法中,将所述全息图形成材料应用到上基底700上,之后,进行紫外固化工艺,同时使用模具900形成所述图形,从而进行成型过程,如图5所示。
可以使用旋涂过程将所述全息图材料应用到上基底700上。
然而,所述图形形成方法不限于此,也可以是在将所述全息图形成材料应用到上基底700上之后,使用具有优异相干性的激光源来形成所述图形。
在通过上述过程而形成的全息图形层800中,四角锥形状的不平整图形810的曲线周期性地形成,并且如图6所示,四角锥形状的不平整图形810可以在一个方向上延长。
进一步而言,当全息图形层800形成曲线形的正弦波图形820时,可以形成所述模具,以对应所述曲线形正弦波图形。
图7是全息图形层800上的区域A的放大图。
四角锥形状的不平整图形810的宽度W1可以在80-150nm的范围内,而高度在100-300nm的范围内。
此外,四角锥形状的不平整图形810间的宽度W2可以在150到420nm的范围内。
就是说,四角锥形状的不平整图形810的曲线可以具有范围在300-500nm的周期。
在根据所述示例性实施例所述的太阳能电池及其制造方法中,所述全息图形层形成在所述上基底上,并且由于在所述全息图形层上所产生的干涉现象之故产生了干涉图形,从而提供了美感和装饰性。
虽然结合示例性实施例示出和描述了本发明,但是对于本领域中的技术人员而言,显然,在不背离由所附权利要求限定的本发明的精神和范围的情况下,可以做出改变和变型。例如,可以对所述示例性实施例中详细示出的每个元件进行修改和实施。另外,应该明白,与所述变型和应用有关的差别包含在所附权利要求中所定义的本发明的范围内。
Claims (13)
1.一种太阳能电池,包括:
设置在该太阳能电池的电池单元上的上基底;以及
设置在所述上基底上的全息图形。
2.根据权利要求1所述的太阳能电池,其中,所述全息图形为四角锥形状的不平整图形,在该四角锥形状的不平整图形中周期性地形成有曲线。
3.根据权利要求2所述的太阳能电池,其中,在所述四角锥形状的不平整图形中,四角椎的宽度在80-150nm的范围内,四角椎的高度在100-300nm的范围内,所述四角锥形状的不平整图形的周期在300-500nm的范围内。
4.根据权利要求1所述的太阳能电池,其中,所述全息图形包括周期性形成的曲线形正弦波图形。
5.根据权利要求1所述的太阳能电池,其中,所述全息图形由诸如环氧树脂、环氧三聚氰胺树脂、压克力树脂或聚氨酯树脂的单一材料或者混合型树脂形成。
6.根据权利要求1所述的太阳能电池,其中,所述上基底包括低铁钢化玻璃或半钢化玻璃。
7.一种太阳能电池的制造方法,包括:
在该太阳能电池的电池单元上形成上基底;以及
在所述上基底上形成全息图形。
8.根据权利要求7所述的太阳能电池的制造方法,其中,通过用作为全息图形成材料的诸如环氧树脂、环氧三聚氰胺树脂、压克力树脂或聚氨酯树脂的单一材料或用混合型树脂涂覆所述上基底之后形成图形来形成所述全息图形。
9.根据权利要求8所述的太阳能电池的制造方法,其中,通过旋涂法将所述全息图形成材料施加到所述上基底上。
10.根据权利要求8所述的太阳能电池的制造方法,其中,所述全息图形通过对所涂覆的全息图材料进行成型过程和紫外光固化过程来形成。
11.根据权利要求7所述的太阳能电池的制造方法,其中,所述全息图形为四角锥形状的不平整图形,在该四角锥形状的不平整图形中周期性地形成有曲线。
12.根据权利要求11所述的太阳能电池的制造方法,其中,在所述四角锥形状的不平整图形中,四角椎的宽度在80-150nm的范围内,四角椎的高度在100-300nm的范围内,所述四角锥形状的不平整图形的周期在300-500nm的范围内。
13.根据权利要求7所述的太阳能电池的制造方法,其中,所述全息图形包括周期性形成的曲线形正弦波图形。
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