CN102565837B - 放射线检测装置和放射线检测系统 - Google Patents

放射线检测装置和放射线检测系统 Download PDF

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Publication number
CN102565837B
CN102565837B CN201110364185.0A CN201110364185A CN102565837B CN 102565837 B CN102565837 B CN 102565837B CN 201110364185 A CN201110364185 A CN 201110364185A CN 102565837 B CN102565837 B CN 102565837B
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China
Prior art keywords
substrate
radiation
radiation detection
conductive member
photoelectric conversion
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Expired - Fee Related
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CN201110364185.0A
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English (en)
Chinese (zh)
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CN102565837A (zh
Inventor
横山启吾
望月千织
渡边实
川锅润
藤吉健太郎
和山弘
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Canon Inc
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Canon Inc
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
    • G01T1/2914—Measurement of spatial distribution of radiation
    • G01T1/2921—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras
    • G01T1/2928—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras using solid state detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/195—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
CN201110364185.0A 2010-11-22 2011-11-17 放射线检测装置和放射线检测系统 Expired - Fee Related CN102565837B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010260524A JP5693174B2 (ja) 2010-11-22 2010-11-22 放射線検出装置及び放射線検出システム
JP2010-260524 2010-11-22

Publications (2)

Publication Number Publication Date
CN102565837A CN102565837A (zh) 2012-07-11
CN102565837B true CN102565837B (zh) 2015-08-05

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CN201110364185.0A Expired - Fee Related CN102565837B (zh) 2010-11-22 2011-11-17 放射线检测装置和放射线检测系统

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Country Link
US (1) US8492726B2 (enExample)
JP (1) JP5693174B2 (enExample)
CN (1) CN102565837B (enExample)

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JP6227227B2 (ja) * 2012-05-31 2017-11-08 コニカミノルタ株式会社 放射線画像撮影装置
JP2014003183A (ja) * 2012-06-19 2014-01-09 Canon Inc 検出装置及び放射線検出システム
JP5997512B2 (ja) 2012-06-20 2016-09-28 キヤノン株式会社 放射線検出装置及び撮像システム
JP6381295B2 (ja) * 2014-05-27 2018-08-29 キヤノン株式会社 撮影装置
JP2016004002A (ja) * 2014-06-18 2016-01-12 キヤノン株式会社 放射線撮影装置及び放射線撮影システム
CN105628717B (zh) * 2014-10-30 2020-05-19 通用电气公司 光检测器、x射线检测装置和x射线成像设备
EP3038349B1 (en) * 2014-12-22 2018-03-14 Canon Kabushiki Kaisha Radiation detection apparatus and radiation imaging system
JP6714332B2 (ja) * 2014-12-22 2020-06-24 キヤノン株式会社 放射線検出装置、及び放射線撮像システム
CN104873215A (zh) * 2015-05-26 2015-09-02 上海奕瑞光电子科技有限公司 一种消除按压伪影的平板探测器及其制备方法
JP6738129B2 (ja) 2015-07-28 2020-08-12 株式会社東芝 光検出器およびこれを用いたライダー装置
JP6646486B2 (ja) 2016-03-16 2020-02-14 キヤノン株式会社 放射線検出装置、及び放射線撮像システム
US10481280B2 (en) * 2016-07-07 2019-11-19 Canon Kabushiki Kaisha Radiation detecting apparatus, radiation detecting system, and manufacturing method for radiation detecting apparatus
JP6377101B2 (ja) * 2016-07-07 2018-08-22 キヤノン株式会社 放射線検出装置及び放射線検出システム
JP6328179B2 (ja) * 2016-07-07 2018-05-23 キヤノン株式会社 放射線検出装置、放射線検出システム、及び、放射線検出装置の製造方法
JP6775408B2 (ja) * 2016-12-20 2020-10-28 キヤノン株式会社 放射線撮像装置及び放射線撮像システム
US10506994B2 (en) * 2017-08-29 2019-12-17 General Electric Company Apparatus for a radiographic device
JP2019152595A (ja) * 2018-03-06 2019-09-12 富士フイルム株式会社 放射線画像検出装置
KR102659426B1 (ko) * 2018-12-27 2024-04-19 엘지디스플레이 주식회사 디지털 엑스레이 검출기
CN111307423A (zh) * 2020-04-08 2020-06-19 平生医疗科技（昆山）有限公司 荧光屏检测平台用图像信息采集装置
WO2021255853A1 (ja) * 2020-06-17 2021-12-23 株式会社日立ハイテク 荷電粒子または放射線の検出装置

Citations (2)

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CN101657737A (zh) * 2007-04-18 2010-02-24 佳能株式会社 放射线检测装置和放射线检测系统
CN101842901A (zh) * 2007-11-05 2010-09-22 佳能株式会社 放射线检测装置的制造方法、放射线检测装置和放射线成像系统

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JPH01184951A (ja) * 1988-01-20 1989-07-24 Sumitomo Electric Ind Ltd イメージスキャナ
JP3333278B2 (ja) * 1993-07-14 2002-10-15 富士写真フイルム株式会社 放射線画像検出方法および放射線画像検出器
JPH0998970A (ja) * 1995-10-06 1997-04-15 Canon Inc Ｘ線撮像装置
JP2001330677A (ja) * 2000-05-24 2001-11-30 Canon Inc 放射線検出装置
JP2003262675A (ja) * 2002-03-11 2003-09-19 Canon Inc シンチレータパネル及びそれを用いた放射線検出装置
JP4280507B2 (ja) * 2003-01-24 2009-06-17 キヤノン株式会社 放射線検出装置の製造方法
JP4455534B2 (ja) * 2006-05-09 2010-04-21 株式会社東芝 放射線検出器およびその製造方法
US7687790B2 (en) * 2007-06-07 2010-03-30 General Electric Company EMI shielding of digital x-ray detectors with non-metallic enclosures
JP2009122059A (ja) * 2007-11-19 2009-06-04 Toshiba Corp 放射線検出装置
JP2011133859A (ja) * 2009-11-30 2011-07-07 Fujifilm Corp 放射線撮像装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101657737A (zh) * 2007-04-18 2010-02-24 佳能株式会社 放射线检测装置和放射线检测系统
CN101842901A (zh) * 2007-11-05 2010-09-22 佳能株式会社 放射线检测装置的制造方法、放射线检测装置和放射线成像系统

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US8492726B2 (en) 2013-07-23
JP5693174B2 (ja) 2015-04-01
JP2012112726A (ja) 2012-06-14
US20120126126A1 (en) 2012-05-24
CN102565837A (zh) 2012-07-11

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