CN102544252A - Method for efficiently packaging light-emitting diode (LED) chips by using substrate high diffuse reflection optical design - Google Patents
Method for efficiently packaging light-emitting diode (LED) chips by using substrate high diffuse reflection optical design Download PDFInfo
- Publication number
- CN102544252A CN102544252A CN2011101999391A CN201110199939A CN102544252A CN 102544252 A CN102544252 A CN 102544252A CN 2011101999391 A CN2011101999391 A CN 2011101999391A CN 201110199939 A CN201110199939 A CN 201110199939A CN 102544252 A CN102544252 A CN 102544252A
- Authority
- CN
- China
- Prior art keywords
- substrate
- led chip
- light
- diffuse reflection
- led
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention aims at providing a light-emitting diode (LED) packaging method capable of obtaining high luminous efficiency, low light attenuation and high light color uniformity in LED chip packaging by using a substrate with an optical design and high diffuse reflection (200-760nm waveband reflectivity R>=80%), and the method is applicable to packaging for various LED chips especially white light LED chips of the various LED chips. The substrate 10 for an LED is characterized in that surface treatment is conducted on the substrate 10 and a high diffuse reflection layer 102 is formed on the surface 101 of the substrate 10. An LED packaging structure is characterized by comprising electrodes 501 and 502, an LED chip 20 and sealing objects 40, wherein the electrodes 501 and 502 are formed on the substrate 10, the LED chip 20 is fixed on the high diffuse reflection layer 102 of the packaging substrate in die bonding mode, and the sealing objects cover the LED chip 20 and the high diffuse reflection layer 102. The LED packaging method has the advantages that the reflection cylindrical surface of light coming out from the bottom of the chip is expanded uniformly enough to form a large-angle sector surface (radian close to 170-degree KLMNOJ) through high diffuse reflection of the substrate surface, so that fluorescent powder can be excited and accordingly luminous efficiency higher than that of a traditional silver-plated mirror surface reflection film is obtained, and good light color uniformity is guaranteed.
Description
Technical field
The present invention relates to a kind of new LED base plate for packaging, referring more particularly to a kind of raising LED light efficiency and reducing light decay increases photochromic inhomogeneity base plate for packaging and method for packing.
Background technology
LED is as a kind of new type light source, owing to have energy-efficient, environmental protection, conventional light source incomparable advantage such as the life-span is long, toggle speed is fast, no stroboscopic height, obtained fast development.
Generally speaking, traditional White-light LED package structure is like Fig. 1; Mainly be provided with the substrate A of a tool groove A1; The interior chip B that combines of this groove A1, this chip B links through a tie line C and another support D again, the last ejection formation that passes through a photic zone E again; Substrate A, chip B, tie line C and sealing photic zone E are combined as a whole, accomplish the encapsulation of LED.
Mostly common LED chip substrate or solid brilliant substrate surface are plating highly reflecting films such as Al film or Ag film etc., to make full use of the light that sends from the led chip bottom.But this high reflectivity film stack can cause reverberation more concentrated; Light more than 80% all concentrates in the narrow reflector space light beam; Be in 60 ° the sector region like the angle of the dotted line F-G-H-I among Fig. 1, thereby it is remarkable to cause dazzling light, especially for the transparent sealing that is mixed with fluorescent material; Less lasing area can cause the area of fluorescent material Stimulated Light-emission gold-tinted very limited, can obviously influence led light source efficient like this.In addition, the high anti-coating of Ag film is easy jaundice variable color in high temperature drying glue process, thereby has reduced the reflectivity of blue wave band, has reduced the light efficiency and the color rendering index of packaged LED.
Based on existing common LED encapsulating structure with and the deficiency of improving one's methods, the present invention has designed " a kind of method of utilizing the encapsulation of the high diffuse reflection optics design carrying out of substrate led chip ".
Summary of the invention
The present invention is intended to solve the foregoing problems of prior art, therefore an object of the present invention is to provide a kind of have high diffuse reflection and the durable high reflectance substrate of high low-temperature stabilization.With the luminous efficiency of obvious raising white light LEDs, reduce the direct light decay that the variable color of Ag reflectance coating causes, improve and dazzle light characteristic.And can guarantee good photochromic consistency.
The object of the invention and solve its technical problem and adopt following technical scheme to realize:
LED encapsulating structure provided by the invention is as shown in Figure 2; It comprises the base plate for packaging 10 with high diffuse reflection film or coating or substrate 102; The one side 101 that said base plate for packaging 10 is used for solid crystalline substance is high diffuse reflector 102, is formed with two electrodes 501 and 502 on it simultaneously; Led chip 20, chip adopt solid crystal type to be fixed on the high diffuse reflector 102 of base plate for packaging; And sealer 40, sealer covers said led chip 20 and said high diffuse reflector 102, to protect said led chip and high diffuse reflector and substrate.
Described high diffuse reflector or substrate are positioned at the below on said led chip plane of living in and in parallel.
Above-mentioned high diffuse reflection baseplate material comprise have the high irreflexive metal of ultraviolet and visible-range, high-molecular organic material such as high whiteness nylon/plastics/Te Fulong etc., high whiteness metallic compound material is like pottery (comprise ceramic body that sintering is crossed and not the ceramic body crossed of sintering) etc.Wherein surperficial high diffuse-reflective material processing mode comprises: 1) powder metallurgy sintered mode or the high pressure mode of colding pressing obtain the homogenous material system of high whiteness or metallic compound such as single-phase or multiphase ceramic, the cermet etc. of heterogeneous material system mixture, and obtain the nonmetallic surfaces such as high polymer have high irreflexive metal surface or have high whiteness; 2) to all surface roughening process of metal surface or nonmetallic surface, surface sand-blasting roughening process etc. for example; 3) realize the composite surface material preparation technology of high diffuse-reflective material coating or coating at the alligatoring substrate surface; Comprise and adopt thermal spraying or modes such as flame-spraying or electric arc plating, the conventional spraying of employing, electrochemistry plating or be coated with ceramic glaze or swabbing mode, form one or more layers at said substrate surface and have film or coating or the glaze layer or the coating of high diffuse effect.Substrate surface can be processed the three-dimensional convex-concave structure with submillimeter level, is beneficial to further strengthen the dispersion effect of chip bottom bright dipping.
Finish materials can select to have the material system of surperficial high diffuse reflective characteristics, like a kind of in the high whiteness materials such as nitride, oxide, sulfide, phosphide, boride, aluminate, silicate, borate, carbonate, chloride and high white clay such as high purity aluminium oxide, magnesia, titanium oxide, zirconia, barium monoxide, calcium phosphate, barium phosphate, barium sulfate, calcium silicates, calcium carbonate, boron nitride, zirconium silicate, (oxygen) zirconium chloride, quartz or several.But be not limited only to above-mentioned several types of materials.
Said substrate comprises printed circuit board (PCB), pottery or the metal substrate that is formed with electrode above that.
Said sealer can be by mixing within it and evenly disperseing the transparent epoxy resin glue or the silica gel moulding of fluorophor to process.
The object of the present invention is to provide a kind of New LED chip package base plate; Its effectively diffuse reflection bright dipping bottom led chip; Make the full and uniform covering of the fan (radian is near 170 degree, and the FGHJ covering of the fan among Fig. 1 is seen in traditional being merely about 60 degree) that expands into wide-angle of reflective cylinder, obtain the more large-area face (seeing the JKLMNO covering of the fan among Fig. 2) that excites; Thereby significantly improve the stimulated emission area of fluorescent material, finally significantly improve the light characteristic of dazzling of light efficiency, reduction LED lamp.Simultaneously since substrate not the color rendering index stability of the LED of making easy to change be enhanced, directly light decay also obviously reduces.
Other characteristics of the present invention and specific embodiment can further be understood in the detailed description of following conjunction with figs..
Description of drawings
Below in conjunction with accompanying drawing and embodiment the present invention is further specified.
Fig. 1 is the encapsulating structure of existing common LED chip, and the fan-shaped angle of usable reflection cylinder of direct reflection optics design wherein is about 60 degree;
Fig. 2 is the overall package structure side view of the embodiment of the invention, and the fan-shaped angle of usable reflection cylinder of diffuse reflection optics design wherein is about 170 degree;
Fig. 3 is the overall structure vertical view of the embodiment of the invention;
Embodiment
Embodiment 1:
With reference to Fig. 2 and Fig. 3, the present invention implements like this:
On the upper surface 101 of aluminium or copper or iron or made LED base plate for packaging 10 such as pottery or circuit board, carry out surface diffuse reflectance layer 102 and handle, make its have diffuse reflectance greater than 80%, direct reflection and transmitance be lower than 20% surface.Can adopt ceramic membrane, ceramic glaze, surface inorganic or organic coating, Te Fulong film etc. even high whiteness ceramic body to make to have high irreflexive upper surface layer 102 with high diffuse reflection such as high whiteness.In embodiment 1, the ultrawhite glaze that adopts diffuse reflection in the 200nm-760nm wave-length coverage can reach 98% (promptly whiteness also can reach 98 simultaneously) is coated on the high diffuse reflector 102 of formation on the Cu substrate.
Pre-designed electrode 501 and 502 is installed on the relevant position of substrate 10, and fixes with AB glue.
Utilize transparent crystal-bonding adhesive 201 that blue-light LED chip 20 is fixing on it on the high diffuse reflector 102 having, and baking 2 hours in 150 ℃-180 ℃ baking oven, crystal-bonding adhesive is solidified.
Two electrodes that utilize gold thread or aluminum steel 30 will accomplish the led chip of solid crystalline substance are drawn respectively and are welded in respectively on two electrodes 501 and 502 on the substrate.
Transparent silica gel and fluorescent material are evenly mixed and vacuum defoamation, evenly disperseed to utilize behind the silica gel of fluorescent material point gum machine with led chip 20 and high diffuse reflector 102 embeddings in silica gel 40.Packaged LED was toasted 1 hour down at 130 ℃, toasted 3 hours down at 150 ℃ then.
Embodiment 1 compares with the silver-plated substrate of light water under similarity condition, and the diffuse reflection of inorganic compound substrate surface 102 is 98%, and the silver-plated specular reflectivity of copper base surface water as a comparison is for being similarly 98%; Under this situation; Adopt same chip and same technology and material to encapsulate, the test result under similarity condition finds that the photoelectric conversion efficiency of present embodiment has improved more than 30%; Highly significant, light decay was lower than 5% in 3000 hours.Concrete data are seen table 1.
Embodiment 2:
Embodiments of the invention 2 are similar with above enforcement row 1; Just the high diffuse reflection glaze layer 102 with above embodiment 1 is changed to barium sulfate coating or aluminium oxide or the magnesium oxide coating that utilizes thermal spraying; Adjusting process makes in the 300nm-600nm wave-length coverage diffuse reflection can reach 92% (promptly whiteness also can reach 92 simultaneously), and all the other steps and embodiment 1 are identical.Concrete data are seen table 1.
Embodiment 3:
Embodiments of the invention 2 are similar with above enforcement row 1; Just the high diffuse reflection glaze layer 102 of above embodiment 1 and Cu substrate are changed to the pottery that has behind in 400nm-620nm wave-length coverage diffuse reflection can reach 98% sintering of (i.e. while whiteness also can reach 98) together, all the other steps and embodiment 1 are identical.Concrete data are seen table 1.
Embodiment 4:
Embodiments of the invention 2 are similar with above enforcement row 1; Just the high diffuse reflection glaze layer 102 of above embodiment 1 and Cu substrate are changed to the pottery that has after in 400nm-620nm wave-length coverage diffuse reflection can reach 98% superhigh pressure of (i.e. while whiteness also can reach 98) is colded pressing together, all the other steps and embodiment 1 are identical.Concrete data are seen table 1.
Embodiment 5:
Embodiments of the invention 2 are similar with above enforcement row 1; Just the Cu substrate with above embodiment 1 is changed to whiteware (diffuse reflection can reach 92%), and high diffuse reflection glaze layer 102 changes the high diffuse reflector that utilizes spraying ultrawhite quartz sand (whiteness 99) or titanium white powder (whiteness 99) to obtain into.The diffuse reflection in the 400nm-620nm wave-length coverage of this diffuse reflector 102 can reach 99% (promptly whiteness also can reach 99 simultaneously).All the other steps and embodiment 1 are identical.Concrete data are seen table 1.
Embodiment 6:
Embodiments of the invention 2 are similar with above enforcement row 1, and just the Cu substrate with above embodiment 1 is changed to aluminium base, and high diffuse reflection glaze layer 102 changes the high diffuse reflector that utilizes spraying ultrawhite quartz sand (whiteness 99) or titanium white powder (whiteness 99) to obtain into.The diffuse reflection in the 400nm-620nm wave-length coverage of this diffuse reflector 102 can reach 99% (promptly whiteness also can reach 99 simultaneously).All the other steps and embodiment 1 are identical.Concrete data are seen table 1.
Embodiment 7:
Embodiments of the invention 2 are similar with above enforcement row 1, and just the blue light GaN chip with above embodiment 1 changes red light chips into, in sealing, does not add fluorescent material.All the other steps and embodiment 1 are identical.Can light efficiency be improved 3%, can improve and dazzle optical phenomenon.
Embodiment 8:
Embodiments of the invention 2 are similar with above enforcement row 1, and just the blue light GaN chip with above embodiment 1 changes the ultraviolet light chip into, in sealing, adds the fluorescent material of ultraviolet stimulated emission.All the other steps and embodiment 1 are identical.Can light efficiency be improved 20%.
The above implements several preferred embodiments that row only are LED encapsulation of the present invention; Be not that technical scope of the present invention is done any restriction; Every foundation technical spirit of the present invention all still belongs to technology contents of the present invention and scope to top any trickle modification, equivalent variations and modification that embodiment did.
The high diffuse reflection substrate LED encapsulation among all embodiment of table 1 the present invention and the substrate water of standard plate luminous efficiency of source and the light decay situation after the high direct reflection Ag film LED encapsulation.
Annotate: contrast standard appearance is meant the led chip encapsulation of behind the high reflection of water plating Ag layer on the red copper substrate, carrying out.
Claims (10)
1. the claim item 1: a kind of high diffuse reflection of substrate (200～760nm wave band reflectivity R >=80% that utilizes; Direct reflection, transmissivity add the absorptivity sum and are lower than 20%) optical design carries out the method for led chip encapsulation, is applicable to the encapsulation of blue-light LED chip, green light LED chip, red LED chip, ultraviolet LED chip, especially White-light LED chip.It is a kind of LED method for packing that utilizes high diffuse reflection of substrate or surperficial high scattering to obtain high light efficiency, low light decay, high color rendering index (CRI).Comprise: metal or nonmetal or organic polymer or composite substrate or two kinds of above-mentioned materials and two or more composite base plates are carried out material processed realize the high diffuse reflection of the full optical spectrum surface of broadband; Above-mentioned high diffuse reflection or the substrate of high scattering that has in the full spectral region of surperficial broadband; The solid crystalline substance of GaN blue chip that is used for white light LEDs encapsulates to carry out white light LEDs with weldering gold/aluminum steel, coating fluorescent powder, point/encapsulating, welding electrode; Its main points are the full and uniform covering of the fan that expands into wide-angle of the reflection of light cylinder that comes out through the surface of substrate, and (radian is near 170 degree; Fig. 1 is seen in traditional being merely about 60 degree); Obtain more large-area exciting and meet personally Fig. 2,, thereby obtain the white light LEDs light fixture that the LED light efficiency than silver-plated reflective membrane is significantly increased with abundant excitated fluorescent powder.For the encapsulation of LED monochromatic light or three primary colors light, the use of such substrate can realize the homogenize of chip light source, significantly reduces the light pollution of dazzling light belt.Because the direct light decay of having avoided the high-temperature discoloration of plating Ag highly reflecting films to cause.And guarantee good photochromic consistency.
2. according to claim item 1 described method for packing; It is characterized in that: wherein the white light LEDs encapsulation step can comprise: the led chip that is coated with fluorescent material or uncoated fluorescent material on the high diffuse reflection substrate is directly solid brilliant having, and especially is directed against the solid crystal type of transparent primer; And be mixed with or the sealer of mixed fluorescent powder not, sealer covers said led chip and said substrate, to protect said led chip, fluorescent material and said high diffuse reflection substrate.
3. method for packing according to claim 1; It is characterized in that: above-mentioned high diffuse reflection substrate refers to the full spectrum (substrate of 200nm～760nm) high diffuse reflection (reflectivity is greater than 80%, and direct reflection, transmitance and absorptivity sum are lower than 20%) in visible light and ultraviolet light range.But be not limited to above wave-length coverage.
4. method for packing according to claim 1 is characterized in that: above-mentioned high diffuse reflection baseplate material comprise have the high irreflexive metal of scope, high-molecular organic material such as high whiteness nylon/plastics/Te Fulong etc., high whiteness metallic compound material is like pottery (comprise ceramic body that sintering is crossed and not the ceramic body crossed of sintering) etc.But be not limited in above different materials.
5. method for packing according to claim 1; It is characterized in that: a kind of method of utilizing the encapsulation of the high diffuse reflection optics design carrying out of substrate led chip; Wherein surperficial high diffuse-reflective material processing mode comprises: 1) adopt powder metallurgy sintered mode or the high pressure mode of colding pressing to obtain the homogenous material system of high whiteness or metallic compound such as single-phase or multiphase ceramic, the cermet etc. of heterogeneous material system mixture, and obtain the nonmetallic surfaces such as high polymer that have high irreflexive metal surface or have high whiteness; 2) to all surface roughening process of metal surface or nonmetallic surface, surface sand-blasting roughening process etc. for example; 3) realize the composite surface material preparation technology of high diffuse-reflective material coating or coating at the alligatoring substrate surface; Comprise and adopt thermal spraying or modes such as flame-spraying or electric arc plating, the conventional spraying of employing, electrochemistry plating or be coated with ceramic glaze or swabbing mode, form one or more layers at said substrate surface and have film or coating or the glaze layer or the coating of high diffuse effect.But be not limited in above several kinds of modes.4) substrate surface can be processed the three-dimensional convex-concave structure with submillimeter level, is beneficial to further strengthen the dispersion effect of chip bottom bright dipping.
6. the surface diffuse reflectance treatment process of high diffuse reflection film according to claim 4 or coating or coating or glaze layer or substrate body; It is characterized in that: finish materials can select to have the material system of surperficial high diffuse reflective characteristics; Like a kind of in the high whiteness materials such as nitride, oxide, sulfide, phosphide, boride, aluminate, silicate, borate, carbonate, chloride and high white clay such as high purity aluminium oxide, magnesia, titanium oxide, zirconia, barium monoxide, calcium phosphate, barium phosphate, barium sulfate, calcium silicates, calcium carbonate, boron nitride, zirconium silicate, (oxygen) zirconium chloride, quartz or several, but be not limited in above different materials.
7. encapsulating structure according to claim 1 is characterized in that: the film of described high diffuse reflection or high scattering or coating or coating or or glaze layer or substrate body be positioned at the below on said led chip plane of living in and in parallel.Said substrate comprises printed circuit board (PCB), pottery or the metal substrate that is formed with electrode above that.
8. encapsulating structure according to claim 1 is characterized in that: said led chip can be to be coated with the blue-light LED chip that fluorescent material or uncoated have fluorescent material.Said led chip can be the monochromatic light chip, also can be the polychromatic light chip, such as blue-light LED chip, green light LED chip, infrared LED chip, and red, blue, green three-primary color LED chip, ultraviolet LED chip.
9. said sealer is processed by transparent epoxy resin glue or the silica gel or the two mixture forming that mix and evenly disperse fluorophor within it or do not contain fluorophor.
10. claim item 1 a described high diffuse reflection substrate is consolidated brilliant white light LEDs encapsulation scheme, comprises following step:
1) employing has the high irreflexive base plate for packaging in surface, or uses the common substrate of handling through surperficial high diffuse reflection, and said substrate comprises the printed circuit board (PCB) that is formed with electrode above that, nonmetal or metal substrate;
2) on the resulting high diffuse reflection substrate of step 1), utilize transparent crystal-bonding adhesive or transparent elargol that led chip is solid brilliant on substrate, and baking at high temperature is so that crystal-bonding adhesive or elargol curing.
Described high diffuse reflection substrate is positioned at the below on said led chip plane of living in and in parallel, and the two is through crystal-bonding adhesive or the tight adhesion of elargol.
3) in step 2) utilize on the solid brilliant substrate of the completion of gained bonding equipment with electrode between a plurality of led chips with parallel connection or series system welding, again with substrate on two electrodes link to each other; Single led chip then directly links to each other chip two electrodes with two electrodes on the substrate.Can be coated with fluorescent material on the led chip, also coating fluorescent powder not.
Described two electrodes of led chip are linked to each other with two electrodes on the substrate can be selected gold thread or aluminum steel for use.
4) on the substrate of step 3) gained, utilize point gum machine that led chip and high diffuse reflection substrate are encapsulated in the sealer, and encapsulate to accomplish LED through high-temperature baking.
Said sealer is by mix and evenly disperse the transparent epoxy resin glue or the silica gel moulding of fluorophor to process within it, perhaps mixing phosphor not.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110199939.1A CN102544252B (en) | 2011-07-05 | 2011-07-05 | One utilizes the design of substrate high diffuse reflective optical to carry out efficient LED chip packaging method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110199939.1A CN102544252B (en) | 2011-07-05 | 2011-07-05 | One utilizes the design of substrate high diffuse reflective optical to carry out efficient LED chip packaging method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102544252A true CN102544252A (en) | 2012-07-04 |
| CN102544252B CN102544252B (en) | 2015-10-07 |
Family
ID=46350692
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110199939.1A Active CN102544252B (en) | 2011-07-05 | 2011-07-05 | One utilizes the design of substrate high diffuse reflective optical to carry out efficient LED chip packaging method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102544252B (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102306695A (en) * | 2011-09-09 | 2012-01-04 | 福建省万邦光电科技有限公司 | Ceramic-layer-plated base for LED (light emitting diode) light source single-cup module |
| CN103606620A (en) * | 2013-11-25 | 2014-02-26 | 江苏新广联科技股份有限公司 | Led packaging structure |
| CN103994874A (en) * | 2013-02-14 | 2014-08-20 | 大塚电子株式会社 | Standard light source and measurement method |
| CN104538510A (en) * | 2014-12-19 | 2015-04-22 | 重庆新天阳照明科技股份有限公司 | LED mirror surface aluminum substrate packaging process |
| WO2016127524A1 (en) * | 2015-02-11 | 2016-08-18 | 深圳市西德利集团有限公司 | Led illuminating device and led lamp |
| CN107910323A (en) * | 2017-11-24 | 2018-04-13 | 山西高科华烨电子集团有限公司 | A kind of small spacing full color display method for packing of COB |
| CN107987626A (en) * | 2016-05-24 | 2018-05-04 | 陈值英 | A kind of diffusing reflection coating |
| CN108649110A (en) * | 2018-04-24 | 2018-10-12 | 易美芯光（北京）科技有限公司 | A kind of LED encapsulation structure and preparation method thereof |
| CN111779993A (en) * | 2020-07-06 | 2020-10-16 | 上海旭禾汽车电子科技有限公司 | COB (chip on board) area light source and preparation method thereof |
| CN112920734A (en) * | 2021-01-19 | 2021-06-08 | 东莞新能德科技有限公司 | Double-sided adhesive tape, adhesive base body and mobile terminal |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1674316A (en) * | 2004-03-25 | 2005-09-28 | 西铁城电子股份有限公司 | Semiconductor light-emitting device |
| CN101532610A (en) * | 2009-04-17 | 2009-09-16 | 宋国兴 | High-power LED lamp and production process thereof |
| US20090267104A1 (en) * | 2008-04-28 | 2009-10-29 | Lighthouse Technology Co., Ltd | Light-emitting diode package |
-
2011
- 2011-07-05 CN CN201110199939.1A patent/CN102544252B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1674316A (en) * | 2004-03-25 | 2005-09-28 | 西铁城电子股份有限公司 | Semiconductor light-emitting device |
| US20090267104A1 (en) * | 2008-04-28 | 2009-10-29 | Lighthouse Technology Co., Ltd | Light-emitting diode package |
| CN101532610A (en) * | 2009-04-17 | 2009-09-16 | 宋国兴 | High-power LED lamp and production process thereof |
Non-Patent Citations (2)
| Title |
|---|
| 中国大百科全书总编辑委员会: "《中国大百科全书 矿冶》", 30 September 2002, article "粉末冶金烧结", pages: 134-144 * |
| 徐滨士 刘世参: "《表面工程技术手册 上》", 31 July 2009, article "涂层制备工艺-基体表面粗化处理", pages: 277 * |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102306695A (en) * | 2011-09-09 | 2012-01-04 | 福建省万邦光电科技有限公司 | Ceramic-layer-plated base for LED (light emitting diode) light source single-cup module |
| CN103994874A (en) * | 2013-02-14 | 2014-08-20 | 大塚电子株式会社 | Standard light source and measurement method |
| CN103606620A (en) * | 2013-11-25 | 2014-02-26 | 江苏新广联科技股份有限公司 | Led packaging structure |
| CN104538510A (en) * | 2014-12-19 | 2015-04-22 | 重庆新天阳照明科技股份有限公司 | LED mirror surface aluminum substrate packaging process |
| WO2016127524A1 (en) * | 2015-02-11 | 2016-08-18 | 深圳市西德利集团有限公司 | Led illuminating device and led lamp |
| CN107987626A (en) * | 2016-05-24 | 2018-05-04 | 陈值英 | A kind of diffusing reflection coating |
| CN107910323A (en) * | 2017-11-24 | 2018-04-13 | 山西高科华烨电子集团有限公司 | A kind of small spacing full color display method for packing of COB |
| CN108649110A (en) * | 2018-04-24 | 2018-10-12 | 易美芯光（北京）科技有限公司 | A kind of LED encapsulation structure and preparation method thereof |
| CN108649110B (en) * | 2018-04-24 | 2020-04-07 | 易美芯光（北京）科技有限公司 | LED packaging structure and preparation method thereof |
| CN111779993A (en) * | 2020-07-06 | 2020-10-16 | 上海旭禾汽车电子科技有限公司 | COB (chip on board) area light source and preparation method thereof |
| CN112920734A (en) * | 2021-01-19 | 2021-06-08 | 东莞新能德科技有限公司 | Double-sided adhesive tape, adhesive base body and mobile terminal |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102544252B (en) | 2015-10-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102544252B (en) | One utilizes the design of substrate high diffuse reflective optical to carry out efficient LED chip packaging method | |
| CN101639164B (en) | Highly stable enhanced colour rendering LED light source module | |
| CN201539737U (en) | LED lamp | |
| TW200836377A (en) | White light emitting device and white light source module using the same | |
| CN101492602B (en) | Mixed fluorescent powder for white light emitting device and white light emitting device using the same | |
| CN101452986A (en) | Encapsulation structure and method for white light emitting diode device | |
| US20120217523A1 (en) | Light emitting diode packaging structure | |
| CN102324424A (en) | White-light LED (Light Emitting Diode) packaged by fluorescent transparent ceramic lens | |
| CN101452985A (en) | Encapsulation structure and method for white light emitting diode device | |
| CN102468403A (en) | Light-emitting diode encapsulating structure | |
| CN201549499U (en) | Encapsulating structure of ceramic-based high-power red, green and blue LED | |
| CN108987549A (en) | A kind of white chip preparation method | |
| CN103904072A (en) | High-power LED chip integrated packaging structure | |
| CN102306698A (en) | Novel LED packaging structure | |
| CN104505451A (en) | Multilayer long-distance fluorescent powder coated LED packaging unit, die and manufacturing method | |
| US10957736B2 (en) | Light emitting diode (LED) components and methods | |
| CN104253121A (en) | Omnidirectional light-emitting diode device and packaging method thereof | |
| JP6981990B2 (en) | LED equipment using neodymium-based materials with various contents of fluorine and oxygen | |
| CN108987556A (en) | A kind of white chip | |
| CN201221690Y (en) | LED plane illuminating device | |
| CN102810537B (en) | White LED light-emitting device | |
| CN203165893U (en) | RGB (Red Green Blue) tri-color LED (Light-Emitting Diode) packaging structure | |
| CN202423386U (en) | Light emitting diode packaging structure | |
| CN204189795U (en) | Arc MCOB LED encapsulation structure | |
| CN102544336A (en) | Visible light full-spectrum high-reflectivity LED (light-emitting diode) packaging structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: FUJIAN INSTITUTE OF RESEARCH ON THE STRUCTURE OF M Free format text: FORMER OWNER: CAO YONGGE Effective date: 20140512 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 100089 HAIDIAN, BEIJING TO: 350002 FUZHOU, FUJIAN PROVINCE |
|
| TA01 | Transfer of patent application right |
Effective date of registration: 20140512 Address after: Fuzhou City, Fujian province 350002 Yangqiao Road No. 155 Applicant after: Fujian Institute of Research on the Structure of Matter, Chinese Academy of Scie Address before: 100089, Haidian District, Beijing, far road, Century City, rain garden, No. 12, -1F Applicant before: Cao Yongge |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |