CN108649110A - A kind of LED encapsulation structure and preparation method thereof - Google Patents
A kind of LED encapsulation structure and preparation method thereof Download PDFInfo
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- CN108649110A CN108649110A CN201810371067.4A CN201810371067A CN108649110A CN 108649110 A CN108649110 A CN 108649110A CN 201810371067 A CN201810371067 A CN 201810371067A CN 108649110 A CN108649110 A CN 108649110A
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- 238000005538 encapsulation Methods 0.000 title claims abstract description 52
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 238000000576 coating method Methods 0.000 claims abstract description 64
- 239000011248 coating agent Substances 0.000 claims abstract description 63
- 239000003292 glue Substances 0.000 claims abstract description 44
- 239000000463 material Substances 0.000 claims abstract description 25
- 238000005507 spraying Methods 0.000 claims abstract description 13
- 238000005516 engineering process Methods 0.000 claims abstract description 12
- 230000001737 promoting effect Effects 0.000 claims abstract description 7
- 239000002096 quantum dot Substances 0.000 claims abstract description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 239000000741 silica gel Substances 0.000 claims description 9
- 229910002027 silica gel Inorganic materials 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 6
- 239000011368 organic material Substances 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 5
- 238000000605 extraction Methods 0.000 claims description 5
- 239000004408 titanium dioxide Substances 0.000 claims description 5
- 239000000843 powder Substances 0.000 claims description 4
- 238000003466 welding Methods 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052793 cadmium Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052736 halogen Inorganic materials 0.000 claims description 3
- 150000002367 halogens Chemical class 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000002994 raw material Substances 0.000 claims description 3
- 229910052711 selenium Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052717 sulfur Inorganic materials 0.000 claims description 3
- 229910052714 tellurium Inorganic materials 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 239000006071 cream Substances 0.000 claims description 2
- 230000005496 eutectics Effects 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 238000010422 painting Methods 0.000 claims 1
- 239000011347 resin Substances 0.000 claims 1
- 229920005989 resin Polymers 0.000 claims 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract description 14
- 238000000034 method Methods 0.000 abstract description 4
- 238000002310 reflectometry Methods 0.000 abstract description 4
- 239000012790 adhesive layer Substances 0.000 abstract description 3
- 239000000499 gel Substances 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 241000218202 Coptis Species 0.000 description 2
- 235000002991 Coptis groenlandica Nutrition 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000005987 sulfurization reaction Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 235000020610 powder formula Nutrition 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a kind of LED encapsulation structure and preparation method thereof, the LED encapsulation structure includes the holder in bowl structure, is fixed on the LED chip of the frame bottom；The stent inner surface is equipped with the white glue coating for promoting LED chip brightness, and luminescent layer is covered in the cavity formed between the white glue coating and the LED chip.LED encapsulation structure of the present invention makes holder bowl as reflector, improves the reflectivity of holder, to effectively improve the brightness of LED encapsulation structure by spraying white adhesive layer on holder；Traditional technology is overcome due to the limited technical problem for leading to LED encapsulation structure luminance raising difficulty of bowl timbering material and structure itself.Method using the present invention prepares LED encapsulation structure, not only can effectively improve the brightness of LED encapsulation structure；And the flexibility of LED encapsulation structure application is improved, quantum dot materials'use amount can be saved, is effectively reduced cost, the influence to environment is reduced；With good prospects for commercial application.
Description
Technical field
The invention belongs to LED technology fields, more particularly to a kind of LED encapsulation structure and preparation method thereof.
Background technology
LED (English name is Light Emitting Diode, and Chinese is light emitting diode) industry is in recent years
One of industry to attract most attention.Wherein LED product have energy saving, power saving, high efficiency, the reaction time is fast, the life cycle time is long,
The advantages that environmental benefit is high is widely used in people's life.For LED industry, the master that LED luminance is eternal is promoted
Topic, major LED manufacturers also always search for the method that can produce more high-brightness LED.
Currently, existing LED structure as shown in Figure 1, its mainly include holder, colloid (fluorescent powder and packaging plastic), gold thread and
Chip.Chip is connect by gold thread with holder, and colloid, which is located in holder, is used as luminescent layer.The existing mode for promoting LED luminance has
It is several：LED luminance is promoted by increasing number of chips, but this mode can increase the manufacturing cost of LED, and number of chips
Increase, heat dissipation problem also is difficult to solve；By improve chip with improve luminous efficiency or the new fluorescent powder formula of research come
Light emission luminance is promoted, but the with high content of technology of both modes, R＆D costs input are big, it is fast to be not easy for the prior art
Speed is realized；By adjusting control circuit to realize the brightness for promoting LED, but the heat dissipation problem of control circuit is difficult to solve；Control
Holder glue cup flank angle processed to promote LED luminance, disadvantage be can only local directed complete set light emitting angle, to promoting brightness effect not
Greatly.
Therefore, for the above deficiency, need one kind can effective enhancing lighting brightness, reduce manufacturing cost, and structure letter
It is single, the strong LED encapsulation structure and preparation method thereof of feasibility.
Invention content
For problems of the prior art, it is an object of the present invention to provide a kind of LED encapsulation structures.It should
LED encapsulation structure sprays one layer of white glue coating on the holder of bowl structure, on the one hand can improve the reflectivity of holder；In turn
Reach the brightness for effectively improving LED encapsulation structure；Another invention, since white adhesive layer has high air-tightness, in LED support
Upper spraying white glue can effectively promote the sulfuration resistant performance of LED encapsulation structure again, to improve the reliability of LED encapsulation structure.
It is another object of the present invention to provide a kind of preparation methods of LED encapsulation structure.
In order to achieve the above objectives, the present invention uses following technical proposals：
A kind of LED encapsulation structure includes being fixed on the LED chip of the frame bottom in the holder of bowl structure；It is special
Sign is that the stent inner surface is equipped with the white glue coating for promoting LED chip brightness, in the white glue coating and the LED core
It is covered with luminescent layer in the cavity formed between piece.
Preferably, the thickness of the white glue coating is 10nm-0.2mm.
Preferably, the coating of the white glue coating is the mixture of silica gel and titanium dioxide；The silica gel and titanium dioxide
Mass ratio be 10-20:1.
Preferably, the bottom surface of the internal stent, which is equipped with, places the LED chip to improve the convex of LED chip light extraction rate
It rises.
Preferably, the inner surface of the holder is arranged in the white glue coating, but does not include the bonding pad of LED chip and holder
Domain.
Preferably, the raw material of the luminescent layer include the mixture of quanta point material or quanta point material and fluorescent powder,
And organic material；Preferably, the quanta point material is to include one in Cd, Se, Te, S, P, In, Zn, Cu, halogens
Kind or a variety of quanta point materials；The organic material is silica gel or epoxy resin.
A kind of preparation method of LED encapsulation structure, includes the following steps：
1) LED chip is fixed on the holder by way of elargol bonding, tin cream welding or eutectic welding
On interior bottom surface, and the positive and negative anodes of LED chip are connect with holder by copper wire, it is silver-plated on the copper wire；
2) use piezoelectric ceramics injection valve technology by the coating even application of the white glue coating in the holder
Surface, but do not include the join domain of LED chip and holder；Coating can be cast to the silver-plated copper wire during spraying
On, and then silver coating is coated；The coating is toasted into 90-120min in 150-170 DEG C using baking oven after spraying, is obtained white
Gel coating；
3) luminescent layer is coated in the cavity formed between the white glue coating and the LED chip.
Preferably, the holder is using made of EMC materials.
Preferably, viscosity of white glue coated coating under the conditions of 25 DEG C is 1000-3000mPas.
Preferably, the coating total amount of the white glue coated coating is 0.05-0.2mg.
Beneficial effects of the present invention are as follows：
1, LED encapsulation structure of the present invention makes holder bowl as reflector, improves by spraying white adhesive layer on holder
The reflectivity of holder, to effectively improve the brightness of LED encapsulation structure；Traditional technology is overcome due to bowl timbering material
With the limited technical problem for leading to LED encapsulation structure luminance raising difficulty of structure itself.
2, the present invention improves height of the LED chip in holder, to increase LED by being equipped with protrusion on holder
The whole light emission rate of chip, improves the overall brightness of LED light source.
3, LED encapsulation structure of the present invention can realize encapsulation of the quanta point material in small size LED.It is tied since LED is encapsulated
Structure uses quantum dot fluorescence material, it can be achieved that the illumination application that the display application of high colour gamut or height develop the color；For example, using the skill
Art, it can be achieved that about 100%NTSC colour gamut.
4, method using the present invention prepares LED encapsulation structure, not only can effectively improve the brightness of LED encapsulation structure；
And the flexibility of LED encapsulation structure application is improved, and quantum dot materials'use amount can be saved, is effectively reduced cost, reduction pair
The influence of environment；With good prospects for commercial application.
Description of the drawings
Specific embodiments of the present invention will be described in further detail below in conjunction with the accompanying drawings.
Fig. 1 shows the schematic diagram of LED encapsulation structure of the present invention；
Fig. 2 shows the structural schematic diagrams that the present invention has white glue coating bracket.
Wherein, 1, holder, 2, LED chip, 3, white glue coating, 4, luminescent layer.
Specific implementation mode
In order to illustrate more clearly of the present invention, the present invention is done further with reference to preferred embodiments and drawings
It is bright.Similar component is indicated with identical reference numeral in attached drawing.It will be appreciated by those skilled in the art that institute is specific below
The content of description is illustrative and be not restrictive, and should not be limited the scope of the invention with this.
As shown in Figure 1, a kind of LED encapsulation structure, includes the holder 1 in bowl structure, is fixed on the LED of 1 bottom of holder
Chip 2；The inner surface of holder 1 is equipped with the white glue coating 3 for promoting 2 brightness of LED chip, between white glue coating 3 and LED chip 2
Luminescent layer 4 is covered in the cavity of formation.
As shown in Fig. 2, the inner surface in holder 1 is arranged in white glue coating 3, the inner surface does not include LED chip 2 and holder
1 join domain.The thickness of white glue coating 3 is 10nm-0.2mm；Coating layer thickness increase can cause the amount of fluorescent glue that can reduce, into
And LED encapsulation structure overall brightness is influenced, it minimizes thickness and gets over Bao Yuehao (depending on technological ability).Relative to uncoated white
The LED encapsulation structure of gel coating, 3% or so can be increased by coating the brightness of the LED encapsulation structure of white glue coating.
White glue coating 3 is that the white glue coated coating that viscosity is 1000-3000mPas (25 DEG C) is used piezoelectric ceramics
Injection valve technology is sprayed on 1 inner surface of holder, is then prepared by baking.The present invention is white in the surface spraying of holder 1
Gel coating makes traditional bowl holder have reflection function, improves reflectivity of the holder 1 to LED chip 2, to effectively carry
The brightness for having risen LED encapsulation structure overcomes traditional technology since the limitation of bowl timbering material and structure itself causes LED to seal
The technical problem of assembling structure luminance raising difficulty.The viscosity of white glue coating 3 of the present invention can also influence the brightness of LED encapsulation structure；
This is because the coating of white glue coating 3 can be cast in spraying process, coating can be caused largely heavy if viscosity is too low
Product is deposited in the bottom surface of holder 1 around LED chip 2, influences the dispersion of the light of LED chip 2；In addition, can also lead
It causes white glue coating 3 thinning, and then influences the light emitting angle of LED chip 2 and holder 1, to influence the light extraction of LED encapsulation structure
Rate reduces light emission luminance.
The present invention white glue coating 3 using silica gel and titanium dioxide mixture；The quality of silica gel and titanium dioxide
Than being 10:1；This is because the coating has preferable air-tightness, it is avoided that the silver layer or elargol of 2 bottom of conducting wire and LED chip
Vulcanize；To effectively promote the sulfuration resistant performance of LED encapsulation structure, to promote the reliability of LED encapsulation structure.
In embodiments of the present invention, holder 1 is internally provided with the protrusion for fixing LED chip 2；The protrusion and holder
1 can be integrally formed；Protrusion can improve height of the LED chip 2 in holder 1, and then promote the light extraction of LED chip 2
Rate improves the brightness of LED encapsulation structure.
In embodiments of the present invention, the raw material that luminescent layer 3 is include quanta point material or quanta point material with it is glimmering
The mixture and organic material of light powder；Preferably, the quanta point material is to include Cd, Se, Te, S, P, In, Zn, Cu, halogen
One or more quanta point materials in prime element；The organic material is silica gel or epoxy resin.LED encapsulation knot of the present invention
Structure can realize encapsulation of the quanta point material in small size LED.It, can since LED encapsulation structure uses quantum dot fluorescence material
Realize the illumination application of display application or the high colour developing of high colour gamut；(for example, using the technology, it can be achieved that about 100%NTSC
Colour gamut.)
In embodiments of the present invention, it in order to avoid luminescent layer 3 is aoxidized, is covered in the top surface of luminescent layer 3 and holder 1
There is barrier layer.
The preparation method of LED encapsulation structure, it is specific as follows：
Step 1) in the protrusion of bottom surface that is fixed on LED chip inside holder 1 by way of elargol bonding, and lead to
Copper wire is crossed to connect the positive and negative anodes of LED chip 2 with holder 1, it is silver-plated on copper wire in order to improve the light emission rate of LED chip 2；
Step 2) use piezoelectric ceramics to spray valve by the coating even application of white glue coating 3 in the inner surface of holder, interior table
Face does not include the join domain of LED chip 2 and holder 1；White glue coating 3 is toasted using baking oven in 150 DEG C after spraying
120min obtains white glue curing of coatings；Since coating is liquid during spraying, holder 1 can be cast to
Bottom surface, and by conducting wire and be exposed to outer elargol and coat, and then it is avoided to vulcanize.The present invention uses the spray of piezoelectric ceramics
The coating that valve technology carries out spraying white glue coating is penetrated, the precision and the uniformity of spraying can be improved；And then effectively promote LED encapsulation
The light extraction efficiency of structure.The coating total amount of white glue coated coating is 0.05-0.2mg.
Step 3) coating shining comprising quanta point material in the cavity that is formed between white glue coating 3 and LED chip 2
Layer 4；Since LED encapsulation structure uses quantum dot fluorescence material, it can be achieved that the illumination that the display application of high colour gamut or height develop the color
Using (for example, using the technology, it can be achieved that the colour gamut of about 100%NTSC.)
Obviously, the above embodiment of the present invention be only to clearly illustrate example of the present invention, and not be pair
The restriction of embodiments of the present invention may be used also on the basis of the above description for those of ordinary skill in the art
To make other variations or changes in different ways, all embodiments can not be exhaustive here, it is every to belong to this hair
Row of the obvious changes or variations that bright technical solution is extended out still in protection scope of the present invention.
Claims (10)
1. a kind of LED encapsulation structure includes being fixed on the LED chip of the frame bottom in the holder of bowl structure；Its feature
It is, the stent inner surface is equipped with the white glue coating for promoting LED chip brightness, in the white glue coating and the LED chip
Between be covered with luminescent layer in the cavity that is formed.
2. LED encapsulation structure according to claim 1, which is characterized in that the thickness of the white glue coating is 10nm-
0.2mm。
3. LED encapsulation structure according to claim 1, which is characterized in that the coating of the white glue coating is silica gel and two
The mixture of titanium oxide；The mass ratio of the silica gel and titanium dioxide is 10-20:1.
4. LED encapsulation structure according to claim 1, which is characterized in that the bottom surface of the internal stent, which is equipped with, places
The LED chip is to improve the protrusion of LED chip light extraction rate.
5. LED encapsulation structure according to claim 1, which is characterized in that the raw material of the luminescent layer include quantum dot
The mixture and organic material of material or quanta point material and fluorescent powder；Preferably, the quanta point material be comprising Cd,
One or more quanta point materials in Se, Te, S, P, In, Zn, Cu, halogens；The organic material is silica gel or ring
Oxygen resin.
6. LED encapsulation structure according to claim 1, which is characterized in that the interior of the holder is arranged in the white glue coating
Surface, but do not include the join domain of LED chip and holder.
7. a kind of preparation method of LED encapsulation structure as described in claim 1-6 is any, which is characterized in that including walking as follows
Suddenly：
1) LED chip is fixed on by way of elargol bonding, tin cream welding or eutectic welding in the holder
On bottom surface, and the positive and negative anodes of LED chip are connect with holder by copper wire, it is silver-plated on the copper wire；
2) use piezoelectric ceramics injection valve technology by the coating even application of the white glue coating the holder inner surface,
But the join domain of LED chip and holder is not included；Coating can be cast on the silver-plated copper wire during spraying, into
And silver coating is coated；The coating is toasted into 90-120min in 150-170 DEG C using baking oven after spraying, obtains white glue painting
Layer；
3) luminescent layer is coated in the cavity formed between the white glue coating and the LED chip.
8. preparation method according to claim 7, which is characterized in that the holder is using made of EMC materials.
9. preparation method according to claim 7, which is characterized in that white glue coated coating viscosity under the conditions of 25 DEG C
For 1000-3000mPas.
10. preparation method according to claim 7, which is characterized in that the coating total amount of the white glue coated coating is
0.05-0.2mg。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810371067.4A CN108649110B (en) | 2018-04-24 | 2018-04-24 | LED packaging structure and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810371067.4A CN108649110B (en) | 2018-04-24 | 2018-04-24 | LED packaging structure and preparation method thereof |
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| Publication Number | Publication Date |
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| CN108649110A true CN108649110A (en) | 2018-10-12 |
| CN108649110B CN108649110B (en) | 2020-04-07 |
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ID=63747029
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102544252A (en) * | 2011-07-05 | 2012-07-04 | 曹永革 | Method for efficiently packaging light-emitting diode (LED) chips by using substrate high diffuse reflection optical design |
| CN103219449A (en) * | 2013-04-18 | 2013-07-24 | 东莞帝光电子科技实业有限公司 | Light-emitting diode (LED) packaging structure and LED packaging method |
| CN204045622U (en) * | 2014-08-25 | 2014-12-24 | 深圳市天电光电科技有限公司 | LED packaging |
| CN106887505A (en) * | 2017-04-24 | 2017-06-23 | 芜湖聚飞光电科技有限公司 | A kind of preparation method of one side luminescence chip level LED |
| CN107170735A (en) * | 2017-06-09 | 2017-09-15 | 易美芯光（北京）科技有限公司 | It is a kind of that there is the LED encapsulation structure for obstructing membrane material |
| CN107565003A (en) * | 2017-07-31 | 2018-01-09 | 深圳市华星光电技术有限公司 | Quantum dot LED encapsulation structure |
-
2018
- 2018-04-24 CN CN201810371067.4A patent/CN108649110B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102544252A (en) * | 2011-07-05 | 2012-07-04 | 曹永革 | Method for efficiently packaging light-emitting diode (LED) chips by using substrate high diffuse reflection optical design |
| CN103219449A (en) * | 2013-04-18 | 2013-07-24 | 东莞帝光电子科技实业有限公司 | Light-emitting diode (LED) packaging structure and LED packaging method |
| CN204045622U (en) * | 2014-08-25 | 2014-12-24 | 深圳市天电光电科技有限公司 | LED packaging |
| CN106887505A (en) * | 2017-04-24 | 2017-06-23 | 芜湖聚飞光电科技有限公司 | A kind of preparation method of one side luminescence chip level LED |
| CN107170735A (en) * | 2017-06-09 | 2017-09-15 | 易美芯光（北京）科技有限公司 | It is a kind of that there is the LED encapsulation structure for obstructing membrane material |
| CN107565003A (en) * | 2017-07-31 | 2018-01-09 | 深圳市华星光电技术有限公司 | Quantum dot LED encapsulation structure |
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| Publication number | Publication date |
|---|---|
| CN108649110B (en) | 2020-04-07 |
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