CN102498549A - 沟槽式化学机械抛光抛光垫 - Google Patents
沟槽式化学机械抛光抛光垫 Download PDFInfo
- Publication number
- CN102498549A CN102498549A CN2010800414168A CN201080041416A CN102498549A CN 102498549 A CN102498549 A CN 102498549A CN 2010800414168 A CN2010800414168 A CN 2010800414168A CN 201080041416 A CN201080041416 A CN 201080041416A CN 102498549 A CN102498549 A CN 102498549A
- Authority
- CN
- China
- Prior art keywords
- polishing pad
- pad
- groove
- polishing
- overlap joint
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 91
- 239000000463 material Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 14
- 239000002585 base Substances 0.000 description 13
- 239000002002 slurry Substances 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 11
- 239000010949 copper Substances 0.000 description 9
- 239000000758 substrate Substances 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000004433 Thermoplastic polyurethane Substances 0.000 description 4
- 238000007517 polishing process Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- -1 Merlon Polymers 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- 229920002635 polyurethane Polymers 0.000 description 3
- 239000004814 polyurethane Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000004677 Nylon Substances 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000005441 aurora Substances 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 238000009432 framing Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004137 mechanical activation Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US27106809P | 2009-07-16 | 2009-07-16 | |
US61/271,068 | 2009-07-16 | ||
PCT/US2010/042073 WO2011008918A2 (en) | 2009-07-16 | 2010-07-15 | Grooved cmp polishing pad |
Publications (1)
Publication Number | Publication Date |
---|---|
CN102498549A true CN102498549A (zh) | 2012-06-13 |
Family
ID=43450188
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010800414168A Pending CN102498549A (zh) | 2009-07-16 | 2010-07-15 | 沟槽式化学机械抛光抛光垫 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20110014858A1 (ja) |
JP (1) | JP2012533888A (ja) |
KR (1) | KR101478414B1 (ja) |
CN (1) | CN102498549A (ja) |
SG (2) | SG10201404152UA (ja) |
TW (1) | TWI519384B (ja) |
WO (1) | WO2011008918A2 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104736297A (zh) * | 2012-12-26 | 2015-06-24 | 东洋橡胶工业株式会社 | 层叠抛光垫的制造方法 |
CN105793962A (zh) * | 2013-10-18 | 2016-07-20 | 嘉柏微电子材料股份公司 | 具有偏置的同心凹槽图案的边缘排除区域的化学机械抛光抛光垫 |
CN112720282A (zh) * | 2020-12-31 | 2021-04-30 | 湖北鼎汇微电子材料有限公司 | 一种抛光垫 |
CN113829176A (zh) * | 2021-08-31 | 2021-12-24 | 北京航天控制仪器研究所 | 一种用于铍材镜体研磨抛光的研磨平板及研磨抛光方法 |
CN114274043A (zh) * | 2021-12-29 | 2022-04-05 | 湖北鼎汇微电子材料有限公司 | 一种抛光垫 |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102009018434B4 (de) * | 2009-04-22 | 2023-11-30 | Ev Group Gmbh | Aufnahmeeinrichtung zur Aufnahme von Halbleitersubstraten |
DE102011082777A1 (de) * | 2011-09-15 | 2012-02-09 | Siltronic Ag | Verfahren zum beidseitigen Polieren einer Halbleiterscheibe |
US9873180B2 (en) | 2014-10-17 | 2018-01-23 | Applied Materials, Inc. | CMP pad construction with composite material properties using additive manufacturing processes |
US10875153B2 (en) | 2014-10-17 | 2020-12-29 | Applied Materials, Inc. | Advanced polishing pad materials and formulations |
US11745302B2 (en) | 2014-10-17 | 2023-09-05 | Applied Materials, Inc. | Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process |
SG11201703114QA (en) | 2014-10-17 | 2017-06-29 | Applied Materials Inc | Cmp pad construction with composite material properties using additive manufacturing processes |
KR102609439B1 (ko) | 2015-10-30 | 2023-12-05 | 어플라이드 머티어리얼스, 인코포레이티드 | 원하는 제타 전위를 가진 연마 제품을 형성하는 장치 및 방법 |
US10593574B2 (en) | 2015-11-06 | 2020-03-17 | Applied Materials, Inc. | Techniques for combining CMP process tracking data with 3D printed CMP consumables |
US10391605B2 (en) | 2016-01-19 | 2019-08-27 | Applied Materials, Inc. | Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process |
US10875146B2 (en) * | 2016-03-24 | 2020-12-29 | Rohm And Haas Electronic Materials Cmp Holdings | Debris-removal groove for CMP polishing pad |
USD816774S1 (en) * | 2016-03-25 | 2018-05-01 | Craig Franklin Edevold | Spiral pattern for cribbage board |
EP3571009A4 (en) * | 2017-01-20 | 2021-01-20 | Applied Materials, Inc. | THIN PLASTIC POLISHING ARTICLE FOR CMP APPLICATIONS |
USD855110S1 (en) * | 2017-01-31 | 2019-07-30 | Gary Peterson | Game board |
US11471999B2 (en) | 2017-07-26 | 2022-10-18 | Applied Materials, Inc. | Integrated abrasive polishing pads and manufacturing methods |
WO2019032286A1 (en) | 2017-08-07 | 2019-02-14 | Applied Materials, Inc. | ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME |
JP7299970B2 (ja) | 2018-09-04 | 2023-06-28 | アプライド マテリアルズ インコーポレイテッド | 改良型研磨パッドのための配合物 |
US11878389B2 (en) | 2021-02-10 | 2024-01-23 | Applied Materials, Inc. | Structures formed using an additive manufacturing process for regenerating surface texture in situ |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040072516A1 (en) * | 1997-05-15 | 2004-04-15 | Osterheld Thomas H. | Polishing pad having a grooved pattern for use in chemical mechanical polishing apparatus |
US6736709B1 (en) * | 2000-05-27 | 2004-05-18 | Rodel Holdings, Inc. | Grooved polishing pads for chemical mechanical planarization |
CN1647255A (zh) * | 2002-04-03 | 2005-07-27 | 东邦工程株式会社 | 抛光垫及使用该垫制造半导体衬底的方法 |
CN101024260A (zh) * | 2006-02-24 | 2007-08-29 | 三芳化学工业股份有限公司 | 具有表面纹路的抛光垫和其制造方法与制造装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4615813B2 (ja) * | 2000-05-27 | 2011-01-19 | ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド | 化学機械平坦化用の研磨パッド |
JP3849582B2 (ja) * | 2002-06-03 | 2006-11-22 | Jsr株式会社 | 研磨パッド及び複層型研磨パッド |
JP3849594B2 (ja) * | 2002-06-28 | 2006-11-22 | Jsr株式会社 | 研磨パッド |
EP1369204B1 (en) * | 2002-06-03 | 2006-10-11 | JSR Corporation | Polishing pad and process for manufacturing a polishing pad |
JP2004071985A (ja) * | 2002-08-08 | 2004-03-04 | Jsr Corp | 半導体ウェハ用研磨パッドの加工方法及び半導体ウェハ用研磨パッド |
JP2004167605A (ja) * | 2002-11-15 | 2004-06-17 | Rodel Nitta Co | 研磨パッドおよび研磨装置 |
JP3872081B2 (ja) * | 2004-12-29 | 2007-01-24 | 東邦エンジニアリング株式会社 | 研磨用パッド |
US8192257B2 (en) * | 2006-04-06 | 2012-06-05 | Micron Technology, Inc. | Method of manufacture of constant groove depth pads |
-
2010
- 2010-07-15 CN CN2010800414168A patent/CN102498549A/zh active Pending
- 2010-07-15 SG SG10201404152UA patent/SG10201404152UA/en unknown
- 2010-07-15 JP JP2012520766A patent/JP2012533888A/ja active Pending
- 2010-07-15 KR KR1020127003925A patent/KR101478414B1/ko not_active IP Right Cessation
- 2010-07-15 SG SG2012002234A patent/SG177625A1/en unknown
- 2010-07-15 WO PCT/US2010/042073 patent/WO2011008918A2/en active Application Filing
- 2010-07-16 US US12/837,705 patent/US20110014858A1/en not_active Abandoned
- 2010-07-16 TW TW099123549A patent/TWI519384B/zh not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040072516A1 (en) * | 1997-05-15 | 2004-04-15 | Osterheld Thomas H. | Polishing pad having a grooved pattern for use in chemical mechanical polishing apparatus |
US6736709B1 (en) * | 2000-05-27 | 2004-05-18 | Rodel Holdings, Inc. | Grooved polishing pads for chemical mechanical planarization |
CN1647255A (zh) * | 2002-04-03 | 2005-07-27 | 东邦工程株式会社 | 抛光垫及使用该垫制造半导体衬底的方法 |
CN101024260A (zh) * | 2006-02-24 | 2007-08-29 | 三芳化学工业股份有限公司 | 具有表面纹路的抛光垫和其制造方法与制造装置 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104736297A (zh) * | 2012-12-26 | 2015-06-24 | 东洋橡胶工业株式会社 | 层叠抛光垫的制造方法 |
CN105793962A (zh) * | 2013-10-18 | 2016-07-20 | 嘉柏微电子材料股份公司 | 具有偏置的同心凹槽图案的边缘排除区域的化学机械抛光抛光垫 |
CN105793962B (zh) * | 2013-10-18 | 2019-03-29 | 嘉柏微电子材料股份公司 | 具有偏置的同心凹槽图案的边缘排除区域的化学机械抛光抛光垫 |
CN112720282A (zh) * | 2020-12-31 | 2021-04-30 | 湖北鼎汇微电子材料有限公司 | 一种抛光垫 |
CN113829176A (zh) * | 2021-08-31 | 2021-12-24 | 北京航天控制仪器研究所 | 一种用于铍材镜体研磨抛光的研磨平板及研磨抛光方法 |
CN114274043A (zh) * | 2021-12-29 | 2022-04-05 | 湖北鼎汇微电子材料有限公司 | 一种抛光垫 |
CN114274043B (zh) * | 2021-12-29 | 2023-02-24 | 湖北鼎汇微电子材料有限公司 | 一种抛光垫 |
Also Published As
Publication number | Publication date |
---|---|
KR20120042985A (ko) | 2012-05-03 |
JP2012533888A (ja) | 2012-12-27 |
TWI519384B (zh) | 2016-02-01 |
TW201121711A (en) | 2011-07-01 |
SG177625A1 (en) | 2012-02-28 |
WO2011008918A3 (en) | 2011-04-28 |
US20110014858A1 (en) | 2011-01-20 |
KR101478414B1 (ko) | 2014-12-31 |
WO2011008918A2 (en) | 2011-01-20 |
SG10201404152UA (en) | 2014-09-26 |
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C06 | Publication | ||
PB01 | Publication | ||
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Application publication date: 20120613 |