TWI519384B - 溝槽式化學機械拋光(cmp)之拋光墊 - Google Patents
溝槽式化學機械拋光(cmp)之拋光墊 Download PDFInfo
- Publication number
- TWI519384B TWI519384B TW099123549A TW99123549A TWI519384B TW I519384 B TWI519384 B TW I519384B TW 099123549 A TW099123549 A TW 099123549A TW 99123549 A TW99123549 A TW 99123549A TW I519384 B TWI519384 B TW I519384B
- Authority
- TW
- Taiwan
- Prior art keywords
- polishing
- polishing pad
- pad
- mils
- grooves
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims description 82
- 239000000758 substrate Substances 0.000 claims description 25
- 239000000126 substance Substances 0.000 claims description 10
- 239000010410 layer Substances 0.000 description 13
- 239000002002 slurry Substances 0.000 description 11
- 235000012431 wafers Nutrition 0.000 description 11
- 239000000463 material Substances 0.000 description 9
- 239000002344 surface layer Substances 0.000 description 9
- 239000010949 copper Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000004433 Thermoplastic polyurethane Substances 0.000 description 4
- 238000007517 polishing process Methods 0.000 description 4
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000011065 in-situ storage Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 229920000768 polyamine Polymers 0.000 description 2
- -1 polyethylene Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000004677 Nylon Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 235000019589 hardness Nutrition 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 235000019587 texture Nutrition 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US27106809P | 2009-07-16 | 2009-07-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201121711A TW201121711A (en) | 2011-07-01 |
TWI519384B true TWI519384B (zh) | 2016-02-01 |
Family
ID=43450188
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW099123549A TWI519384B (zh) | 2009-07-16 | 2010-07-16 | 溝槽式化學機械拋光(cmp)之拋光墊 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20110014858A1 (ja) |
JP (1) | JP2012533888A (ja) |
KR (1) | KR101478414B1 (ja) |
CN (1) | CN102498549A (ja) |
SG (2) | SG10201404152UA (ja) |
TW (1) | TWI519384B (ja) |
WO (1) | WO2011008918A2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI757410B (zh) * | 2017-01-20 | 2022-03-11 | 美商應用材料股份有限公司 | 用於cmp應用的薄的塑膠拋光用具 |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102009018434B4 (de) * | 2009-04-22 | 2023-11-30 | Ev Group Gmbh | Aufnahmeeinrichtung zur Aufnahme von Halbleitersubstraten |
DE102011082777A1 (de) * | 2011-09-15 | 2012-02-09 | Siltronic Ag | Verfahren zum beidseitigen Polieren einer Halbleiterscheibe |
JP2014124718A (ja) * | 2012-12-26 | 2014-07-07 | Toyo Tire & Rubber Co Ltd | 積層研磨パッドの製造方法 |
TWI599447B (zh) * | 2013-10-18 | 2017-09-21 | 卡博特微電子公司 | 具有偏移同心溝槽圖樣之邊緣排除區的cmp拋光墊 |
US9873180B2 (en) | 2014-10-17 | 2018-01-23 | Applied Materials, Inc. | CMP pad construction with composite material properties using additive manufacturing processes |
US11745302B2 (en) | 2014-10-17 | 2023-09-05 | Applied Materials, Inc. | Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process |
US10875153B2 (en) | 2014-10-17 | 2020-12-29 | Applied Materials, Inc. | Advanced polishing pad materials and formulations |
KR102295988B1 (ko) | 2014-10-17 | 2021-09-01 | 어플라이드 머티어리얼스, 인코포레이티드 | 애디티브 제조 프로세스들을 이용한 복합 재료 특성들을 갖는 cmp 패드 구성 |
US10618141B2 (en) | 2015-10-30 | 2020-04-14 | Applied Materials, Inc. | Apparatus for forming a polishing article that has a desired zeta potential |
US10593574B2 (en) | 2015-11-06 | 2020-03-17 | Applied Materials, Inc. | Techniques for combining CMP process tracking data with 3D printed CMP consumables |
US10391605B2 (en) | 2016-01-19 | 2019-08-27 | Applied Materials, Inc. | Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process |
US10875146B2 (en) * | 2016-03-24 | 2020-12-29 | Rohm And Haas Electronic Materials Cmp Holdings | Debris-removal groove for CMP polishing pad |
USD816774S1 (en) * | 2016-03-25 | 2018-05-01 | Craig Franklin Edevold | Spiral pattern for cribbage board |
USD855110S1 (en) * | 2017-01-31 | 2019-07-30 | Gary Peterson | Game board |
US11471999B2 (en) | 2017-07-26 | 2022-10-18 | Applied Materials, Inc. | Integrated abrasive polishing pads and manufacturing methods |
WO2019032286A1 (en) | 2017-08-07 | 2019-02-14 | Applied Materials, Inc. | ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME |
JP7299970B2 (ja) | 2018-09-04 | 2023-06-28 | アプライド マテリアルズ インコーポレイテッド | 改良型研磨パッドのための配合物 |
CN112720282B (zh) * | 2020-12-31 | 2022-04-08 | 湖北鼎汇微电子材料有限公司 | 一种抛光垫 |
US11878389B2 (en) | 2021-02-10 | 2024-01-23 | Applied Materials, Inc. | Structures formed using an additive manufacturing process for regenerating surface texture in situ |
CN113829176B (zh) * | 2021-08-31 | 2023-04-14 | 北京航天控制仪器研究所 | 一种用于铍材镜体研磨抛光的研磨平板及研磨抛光方法 |
CN114274043B (zh) * | 2021-12-29 | 2023-02-24 | 湖北鼎汇微电子材料有限公司 | 一种抛光垫 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5921855A (en) * | 1997-05-15 | 1999-07-13 | Applied Materials, Inc. | Polishing pad having a grooved pattern for use in a chemical mechanical polishing system |
KR100770852B1 (ko) * | 2000-05-27 | 2007-10-26 | 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 | 화학 기계적 평탄화용 그루브형 연마 패드 |
US6736709B1 (en) * | 2000-05-27 | 2004-05-18 | Rodel Holdings, Inc. | Grooved polishing pads for chemical mechanical planarization |
AU2003236328A1 (en) * | 2002-04-03 | 2003-10-13 | Toho Engineering Kabushiki Kaisha | Polishing pad and semiconductor substrate manufacturing method using the polishing pad |
TWI250572B (en) * | 2002-06-03 | 2006-03-01 | Jsr Corp | Polishing pad and multi-layer polishing pad |
JP3849582B2 (ja) * | 2002-06-03 | 2006-11-22 | Jsr株式会社 | 研磨パッド及び複層型研磨パッド |
JP3849594B2 (ja) * | 2002-06-28 | 2006-11-22 | Jsr株式会社 | 研磨パッド |
JP2004071985A (ja) * | 2002-08-08 | 2004-03-04 | Jsr Corp | 半導体ウェハ用研磨パッドの加工方法及び半導体ウェハ用研磨パッド |
JP2004167605A (ja) * | 2002-11-15 | 2004-06-17 | Rodel Nitta Co | 研磨パッドおよび研磨装置 |
JP3872081B2 (ja) * | 2004-12-29 | 2007-01-24 | 東邦エンジニアリング株式会社 | 研磨用パッド |
CN101024260A (zh) * | 2006-02-24 | 2007-08-29 | 三芳化学工业股份有限公司 | 具有表面纹路的抛光垫和其制造方法与制造装置 |
US8192257B2 (en) * | 2006-04-06 | 2012-06-05 | Micron Technology, Inc. | Method of manufacture of constant groove depth pads |
-
2010
- 2010-07-15 SG SG10201404152UA patent/SG10201404152UA/en unknown
- 2010-07-15 CN CN2010800414168A patent/CN102498549A/zh active Pending
- 2010-07-15 SG SG2012002234A patent/SG177625A1/en unknown
- 2010-07-15 JP JP2012520766A patent/JP2012533888A/ja active Pending
- 2010-07-15 WO PCT/US2010/042073 patent/WO2011008918A2/en active Application Filing
- 2010-07-15 KR KR1020127003925A patent/KR101478414B1/ko not_active IP Right Cessation
- 2010-07-16 TW TW099123549A patent/TWI519384B/zh not_active IP Right Cessation
- 2010-07-16 US US12/837,705 patent/US20110014858A1/en not_active Abandoned
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI757410B (zh) * | 2017-01-20 | 2022-03-11 | 美商應用材料股份有限公司 | 用於cmp應用的薄的塑膠拋光用具 |
Also Published As
Publication number | Publication date |
---|---|
TW201121711A (en) | 2011-07-01 |
WO2011008918A3 (en) | 2011-04-28 |
KR20120042985A (ko) | 2012-05-03 |
WO2011008918A2 (en) | 2011-01-20 |
CN102498549A (zh) | 2012-06-13 |
JP2012533888A (ja) | 2012-12-27 |
US20110014858A1 (en) | 2011-01-20 |
SG10201404152UA (en) | 2014-09-26 |
KR101478414B1 (ko) | 2014-12-31 |
SG177625A1 (en) | 2012-02-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI519384B (zh) | 溝槽式化學機械拋光(cmp)之拋光墊 | |
US6705930B2 (en) | System and method for polishing and planarizing semiconductor wafers using reduced surface area polishing pads and variable partial pad-wafer overlapping techniques | |
US8133096B2 (en) | Multi-phase polishing pad | |
US6193587B1 (en) | Apparatus and method for cleansing a polishing pad | |
KR101161883B1 (ko) | 고정화된 3차원 연삭 용품의 제자리 활성화 | |
JP2003500843A (ja) | 異なる溝パターンをもつセクションを備えた化学機械式平坦化すなわち研摩パッド | |
US7070480B2 (en) | Method and apparatus for polishing substrates | |
US20230330810A1 (en) | Chemical mechanical polishing apparatus and method | |
WO2018063242A1 (en) | Chemical-mechanical planarization (cmp) pad conditioner brush-and-abrasive hybrid for multi-step, preparation- and restoration-conditioning process of cmp pad | |
US20230271298A1 (en) | Chemical Mechanical Planarization Tool | |
US20060276111A1 (en) | Conditioning element for electrochemical mechanical processing | |
WO2011126602A1 (en) | Side pad design for edge pedestal | |
US6733615B2 (en) | Method and apparatus for fixed abrasive substrate preparation and use in a cluster CMP tool | |
CN101116953A (zh) | 化学机械研磨的研磨修整装置 | |
JP2002066905A (ja) | 半導体装置の製造方法及びその装置 | |
US20140224766A1 (en) | Groove Design for Retaining Ring | |
JP2005514215A (ja) | リニア化学機械平坦化システムのための溝付きローラ | |
US6051495A (en) | Seasoning of a semiconductor wafer polishing pad to polish tungsten | |
US20020016136A1 (en) | Conditioner for polishing pads | |
WO2006026343A1 (en) | Polishing pad and methods of improving pad removal rates and planarization | |
US6300248B1 (en) | On-chip pad conditioning for chemical mechanical polishing | |
US20020187731A1 (en) | In-situ pad and wafer cleaning during chemical mechanical polishing | |
US20220297258A1 (en) | Substrate polishing simultaneously over multiple mini platens | |
KR101808150B1 (ko) | Cmp 패드 컨디셔너 | |
KR20050014074A (ko) | 화학적 기계적 연마용 슬러리 및 이를 이용한 연마방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |