CN102484354B - 氮化物半导体发光装置 - Google Patents

氮化物半导体发光装置 Download PDF

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Publication number
CN102484354B
CN102484354B CN201080021734.8A CN201080021734A CN102484354B CN 102484354 B CN102484354 B CN 102484354B CN 201080021734 A CN201080021734 A CN 201080021734A CN 102484354 B CN102484354 B CN 102484354B
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China
Prior art keywords
diaphragm
film
nitride semiconductor
light
crystal
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CN201080021734.8A
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English (en)
Chinese (zh)
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CN102484354A (zh
Inventor
吉田真治
折田贤儿
长谷川义晃
持田笃范
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Publication of CN102484354A publication Critical patent/CN102484354A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0281—Coatings made of semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0282—Passivation layers or treatments
    • H01S5/0283—Optically inactive coating on the facet, e.g. half-wave coating

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
CN201080021734.8A 2009-05-20 2010-01-19 氮化物半导体发光装置 Active CN102484354B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009-122287 2009-05-20
JP2009122287A JP5383313B2 (ja) 2009-05-20 2009-05-20 窒化物半導体発光装置
PCT/JP2010/000262 WO2010134229A1 (ja) 2009-05-20 2010-01-19 窒化物半導体発光装置

Publications (2)

Publication Number Publication Date
CN102484354A CN102484354A (zh) 2012-05-30
CN102484354B true CN102484354B (zh) 2014-08-27

Family

ID=43125923

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080021734.8A Active CN102484354B (zh) 2009-05-20 2010-01-19 氮化物半导体发光装置

Country Status (4)

Country Link
US (1) US8437376B2 (enExample)
JP (1) JP5383313B2 (enExample)
CN (1) CN102484354B (enExample)
WO (1) WO2010134229A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6085150B2 (ja) * 2012-03-16 2017-02-22 株式会社日立ハイテクサイエンス 試料作製装置及び試料作製方法
DE102012102306B4 (de) * 2012-03-19 2021-05-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserdiodenvorrichtung
DE102012102305B4 (de) * 2012-03-19 2025-07-31 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserdiodenvorrichtung
DE102012025880B4 (de) 2012-03-19 2025-03-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserdiodenvorrichtung
US8867582B2 (en) 2012-04-04 2014-10-21 Osram Opto Semiconductors Gmbh Laser diode assembly
US8737445B2 (en) * 2012-04-04 2014-05-27 Osram Opto Semiconductors Gmbh Laser diode assembly
US9008138B2 (en) 2012-04-12 2015-04-14 Osram Opto Semiconductors Gmbh Laser diode device
DE102012103160A1 (de) 2012-04-12 2013-10-17 Osram Opto Semiconductors Gmbh Laserdiodenvorrichtung
KR102091843B1 (ko) * 2012-06-25 2020-03-20 서울바이오시스 주식회사 ｍ면 질화물계 발광다이오드의 제조 방법
JP5491679B1 (ja) * 2012-06-29 2014-05-14 パナソニック株式会社 窒化物半導体発光素子
WO2014097508A1 (ja) * 2012-12-19 2014-06-26 パナソニック株式会社 窒化物半導体レーザ素子
CN107849683B (zh) * 2015-07-15 2020-09-01 住友电气工业株式会社 被膜
JP2017143139A (ja) * 2016-02-09 2017-08-17 株式会社東芝 半導体装置およびその製造方法
EP3564404B1 (en) * 2016-12-28 2023-03-15 Sumitomo Electric Industries, Ltd. Coating
DE102017112610A1 (de) * 2017-06-08 2018-12-13 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser und Betriebsverfahren für einen solchen Halbleiterlaser
JP7296934B2 (ja) * 2018-02-14 2023-06-23 ヌヴォトンテクノロジージャパン株式会社 窒化物半導体レーザ素子及び照明光源モジュール
GB2584150B (en) 2019-05-24 2021-05-19 Plessey Semiconductors Ltd LED precursor including a passivation layer
JP7438476B2 (ja) * 2019-08-20 2024-02-27 日亜化学工業株式会社 半導体レーザ装置及びその製造方法
CN115373072B (zh) * 2021-05-21 2025-12-02 中国科学院半导体研究所 c轴择优取向氧化锌镁脊型波导及制作方法
JP2023005918A (ja) * 2021-06-29 2023-01-18 ヌヴォトンテクノロジージャパン株式会社 窒化物半導体発光素子

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003036771A1 (en) * 2001-10-26 2003-05-01 Ammono Sp.Zo.O. Nitride semiconductor laser element, and production method therefor
CN1805230A (zh) * 2004-12-20 2006-07-19 夏普株式会社 氮化物半导体发光元件及其制造方法
US20080181274A1 (en) * 2006-12-28 2008-07-31 Nichia Corporation Nitride semiconductor laser element

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02288287A (ja) * 1989-04-27 1990-11-28 Sharp Corp 半導体レーザ素子
AU2002347692C1 (en) 2001-10-26 2008-03-06 Ammono Sp. Zo.O. Bulk monocrystalline gallium nitride
WO2004004085A2 (en) 2002-06-26 2004-01-08 Ammono Sp.Zo.O. Nitride semiconductor laser device and a method for improving its performance
JP4451371B2 (ja) 2004-12-20 2010-04-14 シャープ株式会社 窒化物半導体レーザ素子
JP2007201373A (ja) 2006-01-30 2007-08-09 Sharp Corp 半導体レーザ素子
JP4444304B2 (ja) 2006-04-24 2010-03-31 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
JP5042609B2 (ja) 2006-12-08 2012-10-03 シャープ株式会社 窒化物系半導体素子
JP4978454B2 (ja) 2006-12-28 2012-07-18 日亜化学工業株式会社 窒化物半導体レーザ素子
US7804872B2 (en) 2007-06-07 2010-09-28 Nichia Corporation Nitride semiconductor laser element
JP5572919B2 (ja) * 2007-06-07 2014-08-20 日亜化学工業株式会社 窒化物半導体レーザ素子

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003036771A1 (en) * 2001-10-26 2003-05-01 Ammono Sp.Zo.O. Nitride semiconductor laser element, and production method therefor
CN1805230A (zh) * 2004-12-20 2006-07-19 夏普株式会社 氮化物半导体发光元件及其制造方法
US20080181274A1 (en) * 2006-12-28 2008-07-31 Nichia Corporation Nitride semiconductor laser element

Also Published As

Publication number Publication date
US20120057612A1 (en) 2012-03-08
JP2010272641A (ja) 2010-12-02
US8437376B2 (en) 2013-05-07
JP5383313B2 (ja) 2014-01-08
CN102484354A (zh) 2012-05-30
WO2010134229A1 (ja) 2010-11-25

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