CN102479797A - High heat radiation mixed light LED chip and manufacturing method thereof - Google Patents
High heat radiation mixed light LED chip and manufacturing method thereof Download PDFInfo
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- CN102479797A CN102479797A CN2010105661252A CN201010566125A CN102479797A CN 102479797 A CN102479797 A CN 102479797A CN 2010105661252 A CN2010105661252 A CN 2010105661252A CN 201010566125 A CN201010566125 A CN 201010566125A CN 102479797 A CN102479797 A CN 102479797A
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Abstract
The invention provides a structure for manufacturing a high heat radiation mixed light LED chip and a method thereof. The structure comprises a base plate and at least two chips provided on the base plate. The chips can be a red chip and a blue chip, or two chips, or a red chip, a blue chip and a green chip, etc. A substrate has a first surface and a second surface opposite to the first surface. A reflecting layer is formed on the second surface of the substrate. A base plate with good thermal diffusivity is provided on the reflecting layer formed at the second surface of the substrate through wafer bonding. At least two chips are provided on the first surface, wherein, light which is emitted from the chips comprises light which leaves the substrate and light which heads for the substrate, the light which heads for the substrate at least partly penetrates the substrate and is reflected by the reflecting layer. At least one electrode of the chips penetrates a sidewall to connect with the base plate. The invention also provides the high heat radiation mixed light LED chip which is made through the method.
Description
Technical field
The present invention relates to make high heat radiation mixed light type led chip, and the structure of making this height heat radiation mixed light type led chip.
Background technology
After nineteen ninety came to light for the LED white light, its luminous efficiency increased fast, breakthrough 100lm/W in 2010.It need not warm up the lamp time, reaction speed is fast, volume is little, power consumption is economized, it is low to pollute, be fit to volume production, reliability is high and applied widely, like traffic sign, giant display or backlight, mobile phone backlight, street lighting etc.LED also has its shortcoming to overcome, the energy of input LED, and about 20% can convert light source to, and remaining 80% all changes into heat energy, and producing heat is very serious problem, and at first, when temperature raise, luminous intensity can descend, and the life-span also can descend with work.Temperature raises and also can cause radiating wavelength shift, produces aberration, and follows conversion quantum efficiency to reduce, and causes luminous intensity to descend, and material can expand, and product reliability will reduce, and also can reduce service life.Therefore, heat radiation is a problem of needing solution badly.
Now aspect illumination; White light is main light source, compares 4 kinds of main light sources, incandescent lamp bulb, fluorescent lamp, Halogen lamp LED, LED Energy distribution; Incandescent lamp bulb radiates with the mode of infrared light in a large number; So can experience the high heat of high temperature aside, but heat can be at light fixture itself, luminous efficiency is very low.The fluorescent lamp luminous efficiency arrives good boundary, and heat energy also evenly distributes.The luminous efficiency of LED is about 20%, but the heat energy that itself sends can find out that LED heat energy problem is extremely to be solved about 80%.Heat radiation has 3 kinds of modes basically, and the one, conduction-type heat radiation, the 2nd, convection type heat radiation, the 3rd, radiant type heat radiation.Dispel the heat main problem points just at area; And because of the heat loss through radiation amount is very little, so the main radiating mode that will discuss is aspect conduction and convection current two.
Heat pattern nurse theorem difficult to understand Δ T=QR, the temperature difference=hot-fluid x thermal resistance, thermal resistance are bigger, are created in the element with regard to the big heat that heals is arranged.Transmissions that see hot after the thermal resistance, heat transmission has vertical and horizontal direction, and vertical direction is equivalent to serial arrangement, goes here and there the more thermal resistance more greatly, and thickness is lower relatively.The level transmission is and the mode of company, and even the thermal resistance number the more tells on better.
The mode that reduces the LED heat history has three kinds, and one for improving luminous efficiency, in the chip manufacturing stage; Improve the energy configuration of 20% luminous 80% heating; The two rectilinear LED that remove for sapphire,, three is that base plate for packaging adopts highly heat-conductive material; With the material of matched coefficients of thermal expansion, and reduce entire heat dissipation substrate entire thermal resistance mode.
The routing mode is used in tradition LED encapsulation, but with respect to metal, sapphire conducts heat quite slow, so thermal source can conduct from metal wire, but radiating effect is not good.At present the up-to-date heat dissipation technology of led chip end is the rectilinear LED that sapphire removes, and removing LED behind the sapphire changes and be labelled on the heat conduction splendid silicon or metal substrate, increases thermal diffusivity greatly.But it is loaded down with trivial details that rectilinear LED compares what traditional water flat LED technology, and remove the led chip behind the sapphire and change thermal expansion coefficient difference and the adherence between the substrate after pasting, and is a hidden danger to long-term use of high-capacity LED in future.
Summary of the invention
The object of the invention is to solve above-mentioned heat dissipation problem of the prior art, and a kind of high heat radiation mixed light type led chip is provided, and the structure of making this height heat radiation mixed light type led chip; It mainly forms a high radiating bottom plate with led chip with the wafer bonding mode; Pass and heat dissipation problem thereby improve heat, and electrode sidewallization in addition partly, make all or partial chip respectively becomes both positive and negative polarity vertically in die terminals; Reduce packaging and routing quantity, increase lighting area and efficient.
An aspect of invention provides a kind of structure and method of making high heat radiation mixed light type led chip, and this structure comprises a base plate and on base plate, is provided with and is no less than two chips.Chip can a red indigo plant, or two indigo plants, or one red one blue one is green ... etc.Said substrate have first surface and with said first surface opposed second surface; Second surface at said substrate forms a reflector, the good base plate of wafer bonding one thermal diffusivity on the reflector that this substrate second surface forms; And setting is no less than two chips on said first surface; Wherein the light from the emission of said chip comprises light of propagating away from said substrate direction and the light of propagating towards said substrate direction, and the light of propagating towards said substrate direction sees through behind the said substrate by said reflective layer reflects at least in part.
According to another aspect of the present invention; Electrode sidewallization in addition partly makes all or partial chip respectively becomes both positive and negative polarity vertically, reduces packaging and routing quantity; Increase lighting area and efficient, side-wall metallic or alloy are got back to chip as can fill a part collection sidelight for reflection-type.
Adopt the structure of making led chip provided by the invention; Can be so that in the led chip that makes according to this structure; Reduce at the electrode area of getting light direction; And chip emission towards the substrate direction propagate and from the light of substrate back outgoing by directly, the reflective layer reflects attached to substrate back be from the substrate face outgoing securely, can effectively utilize the above-mentioned light of propagating towards the substrate direction whereby, the whole light extraction efficiency of raising led chip.More importantly, after this reflector, the high radiating bottom plate that forms with high pressure wafer bonding mode helps led chip under high-power operation, dispel the heat, thus the luminous efficiency of increase LED and increasing the service life.
Description of drawings
The accompanying drawing that is combined in the specification and constitutes a specification part is used to explain embodiment of the present invention, and with the detailed description of above-mentioned general description and following execution mode principle of the present invention is described.
Fig. 1 is the structural representation that shows according to behind the luminous epitaxial loayer of formation on the substrate of the led chip of the first embodiment of the present invention and its first surface;
Fig. 2 shows that to the led chip according to the first embodiment of the present invention etching is accomplished the structural representation after N type doped region exposes to the open air;
Fig. 3 shows forming the structural representation behind the reflector on the substrate second surface according to the led chip of the first embodiment of the present invention;
Fig. 4 is after being presented at reflector as shown in Figure 3, forms the structural representation behind the high radiating bottom plate with the mode of high pressure wafer bonding;
Fig. 5 shows the led chip according to the first embodiment of the present invention, the structural representation after the place that its part electrode and base plate preparation are engaged exposes to the open air out;
Fig. 6 shows the led chip according to the first embodiment of the present invention, the structural representation after electrode completion and the part electrode sidewallization.
Fig. 7 shows the led chip according to the first embodiment of the present invention, the structural representation after all chips form on the same base plate of what.
Fig. 8 shows to the led chip according to the first embodiment of the present invention section side-looking and front elevational schematic.
Fig. 9 is the led chip that shows according to a second embodiment of the present invention, section side-looking and front elevational schematic.
Figure 10 is the led chip sketch map that shows a third embodiment in accordance with the invention.
Embodiment
Specific embodiment of the present invention is described below with reference to accompanying drawings.
The structure of making led chip according to the first embodiment of the present invention may further comprise the steps:
Fig. 1 shows according on the substrate 1 of the led chip of the first embodiment of the present invention and its first surface 11 to form luminous epitaxial loayer 2; The ray structure that this luminous epitaxial loayer 2 is the LED of being used for well known to those skilled in the art, for example IIIV compound semiconductor ray structure etc.Its light of launching comprises light of propagating away from this substrate 1 direction and the light of propagating towards this substrate 1 direction, and sees through substrate 1 at least in part towards the light that substrate 1 direction is propagated.
Fig. 2 shows the led chip according to the first embodiment of the present invention, utilizes the semiconductor process techniques of knowing, and the N type doped region of this luminous epitaxial loayer 2 is exposed to the open air out.And grinding and polishing is carried out at the back side 12 of substrate 1 handle.It can be to utilize diamond wheel to grind that grinding and polishing is handled, and reaching the effect to reducing thin of sapphire substrate, and then the mode of utilization＜3um diamond grains and substrate surface relative motion carries out polishing, to reach mirror effect.
Fig. 3 shows forming reflector 3 on the substrate second surface 12 according to the led chip of the first embodiment of the present invention.Reflector 3 can be metal level or alloy-layer, single or multiple lift, and total reflection film (DBR), DBR adds metal level or alloy-layer.
After Fig. 4 is presented at reflector as shown in Figure 33, form high radiating bottom plate 4 with the mode of high pressure wafer bonding; The mode of this wafer bonding is under atmospheric environment of the little what of vacuum, cooperates suitable temperature＜350 ℃ with the mode of high pressure, and the base plate 4 that a thermal diffusivity is good forms on the what reflector 3.The base plate 4 that this thermal diffusivity is good is can be the conductive heat conducting material and the not Heat Conduction Material that conducts electricity, like molybdenum, and aluminium, nickel, copper, copper tungsten, silicon etc.Good base plate 4 thickness of this thermal diffusivity are at 50um～200um.The reflector 3 that forms on substrate 1 second surface 12 is connected with base plate 4 can Direct Bonding or pass through the bonded layer bonding or pass through adhesive linkage bonding, and material can be a metal material, alloy material, and nonmetallic materials, organic material can be a single layer structure, sandwich construction.
Fig. 5 shows the led chip according to the first embodiment of the present invention, utilizes the mode of cutting and corrosion, make its partly electrode expose to the open air out with the place of base plate preparation joint.
Fig. 6 shows the led chip according to the first embodiment of the present invention is utilized the semiconductor process techniques of knowing, and accomplishes the making of P type electrode 6 and N type electrode 7, reserve a crystal bonding area 5 simultaneously, and N type electrode 7 is connected with base plate through sidewallization.Make chip respectively become both positive and negative polarity vertically, reduce packaging and routing quantity, increase lighting area and efficient.Side-wall metallic or alloy contain reflection and do not reflect two kinds, and reflection-type can be filled part and to be collected a sidelight and get back to come in the chip and avoid light to be absorbed.
Fig. 7 shows the led chip according to the first embodiment of the present invention, utilizes solid crystal technique, and rectilinear chip 10 is formed on the same base plate.
Fig. 8 shows the led chip according to the first embodiment of the present invention, accomplishes section side-looking and front elevational schematic after all technologies.
Explanation according to a second embodiment of the present invention below.Like the difference of the led chip of the Fig. 9 and first embodiment, the second embodiment of the present invention what partly N type doped region be etched to nonconducting substrate.Its making step is identical with the led chip of first embodiment with method.
A third embodiment in accordance with the invention is described below.Like Figure 10, the third embodiment of the present invention is with behind substrate 1 grinding and polishing to a certain thickness, on the second surface 12 of substrate 1, makes patterned structures, and subsequent technique is identical with the first embodiment of the present invention.
Other advantage and modification are expected for a person skilled in the art easily.Therefore, the present invention is not limited to the detail and the exemplary embodiments that show and describe here with regard to aspect widely.Under the situation of aim that does not break away from the defined total inventive concept of appended claim and equivalents thereof and scope, can carry out various distortion.
Claims (9)
1. make high heat radiation mixed light type led chip for one kind, it is characterized in that:
Said structure comprises a base plate and on base plate, is provided with and is no less than two chips.Chip can a red indigo plant, or two indigo plants, or one red one blue one is green ... .. etc.Said substrate have first surface and with said first surface opposed second surface; Second surface at said substrate forms a reflector, the good base plate of wafer bonding one thermal diffusivity on the reflector that this substrate second surface forms; And setting is no less than two chips on said first surface; Wherein the light from the emission of said chip comprises light of propagating away from said substrate direction and the light of propagating towards said substrate direction, and the light of propagating towards said substrate direction sees through behind the said substrate by said reflective layer reflects at least in part.At least one electrode of this chip sees through sidewall and is connected with base plate.This present invention also provides the height heat radiation mixed light type of being made by this method led chip.
2. the high heat radiation of making as claimed in claim 1 mixed light type led chip is characterized in that:
Said substrate can be transparent and opaque, and conduction is with non-conductive, like silicon, carborundum, aluminium oxide etc.
3. the high heat radiation of making as claimed in claim 1 mixed light type led chip is characterized in that:
The first surface of said substrate and second surface can be plane, figure, or nanostructure, photonic crystal etc.
The second surface of said substrate can be to polish and do not polish.
4. the high heat radiation of making as claimed in claim 1 mixed light type led chip is characterized in that:
Said sole can be a conductive and heat-conductive with conduct electricity not heat conduction, like molybdenum, aluminium, nickel, copper,, copper tungsten, silicon etc.
5. the high heat radiation of making as claimed in claim 1 mixed light type led chip is characterized in that:
Between substrate second surface and base plate; Or substrate second surface and bonded layer; Or being arranged to a rare reflector between substrate second surface and the adhesive linkage, the reflector can be that metal level or alloy-layer, single or multiple lift, total reflection film (DBR), DBR add metal level or alloy-layer.
6. the high heat radiation of making as claimed in claim 1 mixed light type led chip is characterized in that:
The reflector that forms on the substrate second surface is connected with base plate can Direct Bonding or through bonded layer bonding or bonding through adhesive linkage, material can be metal material, alloy material, nonmetallic materials, organic material, can be single layer structure, sandwich construction.
7. the high heat radiation of making as claimed in claim 1 mixed light type led chip is characterized in that:
Part electrode sidewall parcel chip can make all or partial chip respectively becomes both positive and negative polarity vertically, reduces packaging and routing quantity, increases lighting area and efficient; Side-wall metallic or alloy contain reflection and do not reflect two kinds, and reflection-type can be filled a part collection sidelight and got back to chip.
8. the high heat radiation of making as claimed in claim 1 mixed light type led chip is characterized in that:
The electrical direction of the electrode of each chip can be identical and inequality on the base plate.
9. the high heat radiation of making as claimed in claim 1 mixed light type led chip is characterized in that:
Each chip can permutation and combination make its series, parallel or connection in series-parallel become can bear the chip of high voltage (AC/DC) power supply.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105661252A CN102479797A (en) | 2010-11-29 | 2010-11-29 | High heat radiation mixed light LED chip and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105661252A CN102479797A (en) | 2010-11-29 | 2010-11-29 | High heat radiation mixed light LED chip and manufacturing method thereof |
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| CN102479797A true CN102479797A (en) | 2012-05-30 |
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| CN2010105661252A Pending CN102479797A (en) | 2010-11-29 | 2010-11-29 | High heat radiation mixed light LED chip and manufacturing method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018137139A1 (en) * | 2017-01-24 | 2018-08-02 | Goertek. Inc | Micro-led device, display apparatus and method for manufacturing a micro-led device |
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2010
- 2010-11-29 CN CN2010105661252A patent/CN102479797A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018137139A1 (en) * | 2017-01-24 | 2018-08-02 | Goertek. Inc | Micro-led device, display apparatus and method for manufacturing a micro-led device |
| US11205677B2 (en) | 2017-01-24 | 2021-12-21 | Goertek, Inc. | Micro-LED device, display apparatus and method for manufacturing a micro-LED device |
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Application publication date: 20120530 |