CN202103092U - Efficient and high voltage bond-type LED chip structure with electrodes on side walls - Google Patents
Efficient and high voltage bond-type LED chip structure with electrodes on side walls Download PDFInfo
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- CN202103092U CN202103092U CN2010206336422U CN201020633642U CN202103092U CN 202103092 U CN202103092 U CN 202103092U CN 2010206336422 U CN2010206336422 U CN 2010206336422U CN 201020633642 U CN201020633642 U CN 201020633642U CN 202103092 U CN202103092 U CN 202103092U
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Abstract
The utility model provides an efficient and high voltage bond-type LED chip structure with electrodes on side walls. The structure comprises at least one chip and a baseplate; the chip comprises a substrate and a luminous epitaxial layer arranged on one surface of the substrate; the substrate is provided with a first surface and a second surface opposite to the first surface; a reflective layer is formed on the second surface of the substrate; the baseplate with favorable heat radiation performance is in wafer bonding with the reflective layer formed on the second surface of the substrate; for the luminous epitaxial layer formed on the first surface, the light given out from the luminous epitaxial layer includes light transmitted in the direction away from the substrate and that transmitted in the direction towards the substrate, and at least part of the light transmitted in the direction towards the substrate penetrates the substrate and then reflected by the reflective layer; and at least one electrode of the luminous epitaxial layer is connected with the baseplate through side walls.
Description
Technical field
The present invention relates to a kind of structure of efficient high-pressure electrode sidewall bonded led chip.
Background technology
The direct-current LED illuminating product of comparing traditional, the high-voltage LED product does not need the transformation device, has not only practiced thrift cost, and performance is more stable, current density is more even, luminous efficiency is also higher.Luminous efficiency promotes and the device cost reduction is laid equal stress on is LED core technology Development Trend.At present, the lifting of extension chip technology descends its cost ratio rapidly, but discrete chip backend process and conventional package technology become the cost bottleneck.In addition, when LED device efficiency＞100lm/W, also be faced with large scale led chip light extraction efficiency, the package cooling problem.Tradition LED encapsulation problem, like cost, structure, along with general illumination proposes requirements at the higher level to led light source design, multi-functional use, the demand of die set light source, tool systemic-function light source increases sharply.High-power, integrated is a kind of trend of led chip and light source development.。
After nineteen ninety came to light for the LED white light, its luminous efficiency increased fast, breakthrough 100lm/W in 2010.It need not warm up the lamp time, reaction speed is fast, volume is little, power consumption is economized, it is low to pollute, be fit to volume production, reliability is high and applied widely, like traffic sign, giant display or backlight, mobile phone backlight, street lighting etc.LED also has its shortcoming to overcome, the energy of input LED, and about 20% can convert light source to, and remaining 80% all changes into heat energy, and producing heat is very serious problem, and at first, when temperature raise, luminous intensity can descend, and the life-span also can descend with work.Temperature raises and also can cause radiating wavelength shift, produces aberration, and follows conversion quantum efficiency to reduce, and causes luminous intensity to descend, and material can expand, and product reliability will reduce, and also can reduce service life.Therefore, heat radiation is a problem of needing solution badly.
Now aspect illumination; White light is main light source, compares 4 kinds of main light sources, incandescent lamp bulb, fluorescent lamp, Halogen lamp LED, LED Energy distribution; Incandescent lamp bulb radiates with the mode of infrared light in a large number; So can experience the high heat of high temperature aside, but heat can be at light fixture itself, luminous efficiency is very low.The fluorescent lamp luminous efficiency arrives good boundary, and heat energy also evenly distributes.The luminous efficiency of LED is about 20%, but the heat energy that itself sends can find out that LED heat energy problem is extremely to be solved about 80%.
Heat radiation has 3 kinds of modes basically, and the one, conduction-type heat radiation, the 2nd, convection type heat radiation, the 3rd, radiant type heat radiation.Dispel the heat main problem points just at area; And because of the heat loss through radiation amount is very little, so the main radiating mode that will discuss is aspect conduction and convection current two.
Heat pattern nurse theorem difficult to understand Δ T=QR, the temperature difference=hot-fluid x thermal resistance, thermal resistance are bigger, are created in the element with regard to the big heat that heals is arranged.Transmissions that see hot after the thermal resistance, heat transmission has vertical and horizontal direction, and vertical direction is equivalent to serial arrangement, goes here and there the more thermal resistance more greatly, and thickness is lower relatively.The level transmission is and the mode of company, and even the thermal resistance number the more tells on better.
The mode that reduces the LED heat history has three kinds, and one for improving luminous efficiency, in the chip manufacturing stage; Improve the energy configuration of 20% luminous 80% heating; The two rectilinear LED that remove for sapphire,, three is that base plate for packaging adopts highly heat-conductive material; With the material of matched coefficients of thermal expansion, and reduce entire heat dissipation substrate entire thermal resistance mode.
The routing mode is used in tradition LED encapsulation, but with respect to metal, sapphire conducts heat quite slow, so thermal source can conduct from metal wire, but radiating effect is not good.At present the up-to-date heat dissipation technology of led chip end is the rectilinear LED that sapphire removes, and removing LED behind the sapphire changes and be labelled on the heat conduction splendid silicon or metal substrate, increases thermal diffusivity greatly.But it is loaded down with trivial details that rectilinear LED compares what traditional water flat LED technology, and remove the led chip behind the sapphire and change thermal expansion coefficient difference and the adherence between the substrate after pasting, and is a hidden danger to long-term use of high-capacity LED in future.
Summary of the invention
The object of the invention is to solve above-mentioned heat dissipation problem of the prior art; A kind of structure of efficient high-pressure electrode sidewall bonded led chip is provided, and it mainly forms a high radiating bottom plate with led chip with the wafer bonding mode, passes and heat dissipation problem thereby improve heat in die terminals; And with partial electrode sidewallization in addition; Make chip respectively become both positive and negative polarity vertically, reduce packaging and routing quantity, increase lighting area and efficient.
An aspect of invention; A kind of structure of efficient high-pressure electrode sidewall bonded led chip is provided, and this structure comprises an at least one chip and a base plate, and said chip comprises that (said substrate can be the silicon of opaque conduction to substrate; The carborundum of electrically conducting transparent, transparent nonconducting aluminium oxide.) and be grown in the luminous epitaxial loayer of a substrate surface; Said substrate has first surface and (first surface of said substrate and second surface can be the planes, figure, nanostructure, photonic crystal with said first surface opposed second surface.); The second surface of said substrate form a reflector (said reflector can be metal level or alloy-layer, single or multiple lift, DBR total reflection film, DBR total reflection film add metal level or alloy-layer.), (said base plate can be the metal material or the semi-conducting material of conductive and heat-conductive to the good base plate of wafer bonding one thermal diffusivity, like molybdenum, aluminium, nickel, copper, copper tungsten, silicon etc. on the reflector that this substrate second surface forms.); And on said first surface, form luminous epitaxial loayer; Wherein the light from said luminous epitaxial loayer emission comprises light of propagating away from said substrate direction and the light of propagating towards said substrate direction, and the light of propagating towards said substrate direction sees through behind the said substrate by said reflective layer reflects at least in part.
According to another aspect of the present invention, with partial electrode sidewallization in addition, make chip respectively become both positive and negative polarity vertically, reduce packaging and routing quantity, increase lighting area and efficient, side-wall metallic or alloy are got back to chip as can fully collecting sidelight for reflection-type.Luminous epitaxial loayer can be made into single LED tube core and several annular LED tube cores, and makes it be connected into the chip that can bear high voltage AC/DC power supply, and electric current is by evenly spreading around the middle mind-set or inwardly being concentrated by even all around.
Adopt the structure of making led chip provided by the invention; Can be so that in the led chip that makes according to this structure; Getting the electrode area of light direction; No matter for single tube core or circular pattern series connection tube core can both reduce, not only current trend is even, and the emission of luminous epitaxial loayer towards the substrate direction propagate and from the light of substrate back outgoing by the reflective layer reflects attached to substrate back is from the substrate face outgoing directly, securely; Can effectively utilize the above-mentioned light of propagating towards the substrate direction whereby, improve the whole light extraction efficiency of led chip.More importantly, after this reflector, the high radiating bottom plate that forms with high pressure wafer bonding mode helps led chip under high-power operation, dispel the heat, thus the luminous efficiency of increase LED and increasing the service life.
Description of drawings
The accompanying drawing that is combined in the specification and constitutes a specification part is used to explain embodiment of the present invention, and with the detailed description of above-mentioned general description and following execution mode principle of the present invention is described.
Fig. 1 is the structural representation that shows according to behind the luminous epitaxial loayer of formation on the substrate of the led chip of the first embodiment of the present invention and its first surface;
Fig. 2 shows the led chip according to the first embodiment of the present invention, accomplishes the structural representation behind several independent annular tube cores;
Fig. 3 shows forming the structural representation behind the reflector on the substrate second surface according to the led chip of the first embodiment of the present invention;
Fig. 4 is after being presented at reflector as shown in Figure 3, forms the structural representation behind the high radiating bottom plate with the mode of high pressure wafer bonding;
Fig. 5 shows the led chip according to the first embodiment of the present invention, the structural representation after the place that the preparation of its partial electrode and base plate is engaged exposes to the open air out;
Fig. 6 shows the led chip according to the first embodiment of the present invention, the structural representation after electrode completion and the partial electrode sidewallization;
Fig. 7 shows to the led chip according to the first embodiment of the present invention section side-looking and front elevational schematic;
Fig. 8 is the led chip that shows according to a second embodiment of the present invention, section side-looking and front elevational schematic;
Fig. 9 is the led chip sketch map that shows a third embodiment in accordance with the invention.
Embodiment
Specific embodiment of the present invention is described below with reference to accompanying drawings.
The structure of making led chip according to the first embodiment of the present invention may further comprise the steps:
Fig. 1 shows according on the substrate 1 of the led chip of the first embodiment of the present invention and its first surface 11 to form luminous epitaxial loayer 2; The ray structure that this luminous epitaxial loayer 2 is the LED of being used for well known to those skilled in the art, for example IIIV compound semiconductor ray structure etc.Its light of launching comprises light of propagating away from this substrate 1 direction and the light of propagating towards this substrate 1 direction, and sees through substrate 1 at least in part towards the light that substrate 1 direction is propagated.
Fig. 2 shows the led chip according to the first embodiment of the present invention is utilized the semiconductor process techniques of knowing, and should be made on several independent annular LED tube core what substrates 1 by luminous epitaxial loayer 2.
Fig. 3 shows forming reflector 3 on the substrate second surface 12 according to the led chip of the first embodiment of the present invention.Reflector 3 can be metal level or alloy-layer, single or multiple lift, and the DBR total reflection film, the DBR total reflection film adds metal level or alloy-layer.
After Fig. 4 is presented at reflector as shown in Figure 33, form high radiating bottom plate 4 with the mode of high pressure wafer bonding; The mode of this wafer bonding is under atmospheric environment of the little what of vacuum, cooperates suitable temperature＜350 ℃ with the mode of high pressure, and the base plate 4 that a thermal diffusivity is good forms on the what reflector 3.The base plate 4 that this thermal diffusivity is good is can be the metal material or the semi-conducting material of conductive and heat-conductive, like molybdenum, and aluminium, nickel, copper, copper tungsten, silicon etc.Good base plate 4 thickness of this thermal diffusivity are at 50um～200um.The reflector 3 that forms on substrate 1 second surface 12 is connected with base plate 4 can Direct Bonding or pass through the bonded layer bonding or pass through adhesive linkage bonding, and material can be a metal material, alloy material, and nonmetallic materials, organic material can be a single layer structure, sandwich construction.
Fig. 5 shows the led chip according to the first embodiment of the present invention, utilizes cutting and the mode of corroding, and the place that the preparation of its partial electrode and base plate is engaged exposes to the open air out.
Fig. 6 shows the led chip according to the first embodiment of the present invention; The semiconductor process techniques that utilization is known is accomplished electrode 5,6 and is made, and makes each annular independent LED tube core be able to be connected into and can bear high-tension chip; And partial electrode 6 sidewall coating tube cores; Can make chip respectively become both positive and negative polarity vertically, reduce packaging and routing quantity, increase lighting area and efficient; Side-wall metallic or alloy contain reflection and do not reflect two kinds, and reflection-type can fully be collected sidelight and got back to chip.
Fig. 7 shows the led chip according to the first embodiment of the present invention, accomplishes the front elevational schematic after all technologies.
Explanation according to a second embodiment of the present invention below.Like the difference of the led chip of the Fig. 8 and first embodiment, the second embodiment of the present invention forms on the single LED tube core what substrate 1 at what, makes in low-voltage high-power LED application, to compare the what traditional structure and obtain preferable radiating effect and luminous efficiency.Its making step is identical with the led chip of first embodiment.
A third embodiment in accordance with the invention is described below.Like Fig. 9, the third embodiment of the present invention is with behind substrate 1 grinding and polishing to a certain thickness, on the second surface 12 of substrate 1, makes patterned structures, and subsequent technique is identical with the first embodiment of the present invention.
Other advantage and modification are expected for a person skilled in the art easily.Therefore, the present invention is not limited to the detail and the exemplary embodiments that show and describe here with regard to aspect widely.Under the situation of aim that does not break away from the defined total inventive concept of appended claim and equivalents thereof and scope, can carry out various distortion.
Claims (8)
1. efficient high-pressure electrode sidewall bonded led chip is characterized in that:
Said structure comprises an at least one chip and a base plate, and said chip comprises substrate and be grown in the luminous epitaxial loayer of a substrate surface, said substrate have first surface and with said first surface opposed second surface; Second surface at said substrate forms a reflector, the good base plate of wafer bonding one thermal diffusivity on the reflector that this substrate second surface forms; And on said first surface, form luminous epitaxial loayer; Wherein the light from said luminous epitaxial loayer emission comprises light of propagating away from said substrate direction and the light of propagating towards said substrate direction; The light of propagating towards said substrate direction sees through behind the said substrate by said reflective layer reflects at least in part, and at least one electrode of this luminous epitaxial loayer sees through sidewall and is connected with base plate.
2. efficient high-pressure electrode sidewall bonded led chip as claimed in claim 1 is characterized in that:
Said substrate can be the silicon of opaque conduction, the carborundum of electrically conducting transparent, transparent nonconducting aluminium oxide.
3. efficient high-pressure electrode sidewall bonded led chip as claimed in claim 1 is characterized in that:
The first surface of said substrate and second surface can be the planes, figure, nanostructure, photonic crystal.
4. efficient high-pressure electrode sidewall bonded led chip as claimed in claim 1 is characterized in that:
Said base plate can be the metal material or the semi-conducting material of conductive and heat-conductive.
5. efficient high-pressure electrode sidewall bonded led chip as claimed in claim 1 is characterized in that:
Between substrate second surface and base plate; Or substrate second surface and bonded layer; Or being arranged to a rare reflector between substrate second surface and the adhesive linkage, the reflector can be that metal level or alloy-layer, single or multiple lift, DBR total reflection film, DBR total reflection film add metal level or alloy-layer.
6. efficient high-pressure electrode sidewall bonded led chip as claimed in claim 1 is characterized in that:
The reflector that forms on the substrate second surface is connected with base plate can Direct Bonding or through bonded layer bonding or bonding through adhesive linkage, material can be a metal material, alloy material, and nonmetallic materials, organic material can be a single layer structure, sandwich construction.
7. efficient high-pressure electrode sidewall bonded led chip as claimed in claim 1 is characterized in that:
The partial electrode sidewall coats tube core, makes chip respectively become both positive and negative polarity vertically.
8. efficient high-pressure electrode sidewall bonded led chip as claimed in claim 1 is characterized in that:
Luminous epitaxial loayer can be made into single LED tube core and several annular LED tube cores, and makes it be connected into the chip that can bear high voltage AC/DC power supply, and electric current is by evenly spreading around the middle mind-set or inwardly being concentrated by even all around.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206336422U CN202103092U (en) | 2010-11-29 | 2010-11-29 | Efficient and high voltage bond-type LED chip structure with electrodes on side walls |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010206336422U CN202103092U (en) | 2010-11-29 | 2010-11-29 | Efficient and high voltage bond-type LED chip structure with electrodes on side walls |
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| CN202103092U true CN202103092U (en) | 2012-01-04 |
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| CN2010206336422U Expired - Fee Related CN202103092U (en) | 2010-11-29 | 2010-11-29 | Efficient and high voltage bond-type LED chip structure with electrodes on side walls |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013159615A1 (en) * | 2012-04-28 | 2013-10-31 | 厦门市三安光电科技有限公司 | Vertical light emitting device and manufacturing method thereof |
| CN111786647A (en) * | 2020-08-07 | 2020-10-16 | 展讯通信（上海）有限公司 | Wafer-level surface acoustic wave filter and packaging method |
| CN114122215A (en) * | 2022-01-25 | 2022-03-01 | 北京芯海视界三维科技有限公司 | Light emitting unit and light emitting device |
-
2010
- 2010-11-29 CN CN2010206336422U patent/CN202103092U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013159615A1 (en) * | 2012-04-28 | 2013-10-31 | 厦门市三安光电科技有限公司 | Vertical light emitting device and manufacturing method thereof |
| CN111786647A (en) * | 2020-08-07 | 2020-10-16 | 展讯通信（上海）有限公司 | Wafer-level surface acoustic wave filter and packaging method |
| US11632095B2 (en) | 2020-08-07 | 2023-04-18 | Spreadtrum Communications (Shanghai) Co., Ltd. | Wafer level surface acoustic wave filter and package method |
| CN114122215A (en) * | 2022-01-25 | 2022-03-01 | 北京芯海视界三维科技有限公司 | Light emitting unit and light emitting device |
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| C14 | Grant of patent or utility model | ||
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| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120104 Termination date: 20121129 |