CN102479757A - 圆筒形封装体及其制造方法、电子装置 - Google Patents

圆筒形封装体及其制造方法、电子装置 Download PDF

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Publication number
CN102479757A
CN102479757A CN2011103716293A CN201110371629A CN102479757A CN 102479757 A CN102479757 A CN 102479757A CN 2011103716293 A CN2011103716293 A CN 2011103716293A CN 201110371629 A CN201110371629 A CN 201110371629A CN 102479757 A CN102479757 A CN 102479757A
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cylindrical shape
board
substrate
flexible base
packaging body
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CN2011103716293A
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李强远
金贤周
李圭济
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SK Hynix Inc
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Hynix Semiconductor Inc
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Publication of CN102479757A publication Critical patent/CN102479757A/zh
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    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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Abstract

本发明提供圆筒形封装体及其制造方法、电子装置。该圆筒形封装体包括具有中空区域的圆筒形基板以及至少一个安装在圆筒形基板的外围上的半导体芯片。

Description

圆筒形封装体及其制造方法、电子装置
技术领域
本发明涉及半导体封装体及其制造方法，更具体地，涉及圆筒形封装体(cylindrical package)、包括圆筒形封装体的电子装置及其制造方法。
背景技术
每个半导体芯片在其中都包括多个集成电路。然而，半导体芯片可能因外部物理和/或化学影响而易受损。因此，半导体芯片本身无法作为半导体最终产品。因而，可使用各种装配工艺之一封装半导体芯片。例如，可将半导体芯片安装在基板(例如，引线框或印刷电路板)上，且可将半导体芯片电连接到基板。此外，可使用如环氧模塑化合物(EMC)材料的材料将安装在基板上的半导体芯片封装体，以保护半导体芯片免受外部水分和/或外部污染的影响。
尽管半导体芯片会大幅扭曲，一些半导体封装体仍会构造为具有安装在平坦基板上的半导体芯片及将半导体芯片电连接到平坦基板的接合线(或凸块)。在此情形下，会对半导体芯片和/或基板施加物理应力。然而，随着信息技术发展急剧地加速，会需要一些弯曲的电子产品。因此，未来可能越来越需要包括安装在非平坦基板上的半导体芯片的半导体封装体。
发明内容
一些示范性实施例关于适合于具有弯曲的电子产品的圆筒形封装体。
其他示范性实施例关于适合于具有弯曲的电子产品的圆筒形封装体的制造方法。
其他示范性实施例关于包括圆筒形封装体的电子产品。
在示范性实施例中，圆筒形封装体包括其中具有中空区域的圆筒形基板及至少一个安装在圆筒形基板的外围上的半导体芯片。
圆筒形基板可以是柔性基板。
圆筒形基板可包括聚对苯二甲酸乙二醇酯(PET)、聚萘二甲酸乙二醇酯(PEN)、聚醚砜(PES)、多芳基化合物(PAR)、聚碳酸酯(PC)、环烯共聚物(COC)、聚苯乙烯(PS)及聚酰亚胺(PI)中的至少一种。
圆筒形封装体可进一步包括将至少一个半导体装置的芯片焊垫电连接到圆筒形基板的基板焊垫的接合线。圆筒形封装体可进一步包括在圆筒形基板的外围与至少一个半导体芯片的底面之间的粘着剂。
圆筒形封装体可进一步包括将至少一个半导体装置的芯片焊垫电连接到圆筒形基板的基板焊垫的互连部分。互连部分可包括金属凸块及焊料凸块。互连部分可包括各向异性导电膜。
圆筒形封装体可进一步包括覆盖至少一个半导体芯片的模塑材料。
在另一示范性实施例中，电子产品包括圆筒形封装体，且该圆筒形封装体包括其中具有中空区域的圆筒形基板及至少一个安装在圆筒形基板的外围上的半导体芯片。
电子产品可进一步包括流经圆筒形封装体的中空区域的冷却介质。
在再一个示范性实施例中，该方法包括在具有第一表面及与第一表面相反的第二表面的平坦柔性基板上形成电路图案、连接柔性基板的两端而形成圆筒形柔性基板以及将至少一个半导体芯片安装在圆筒形柔性基板的外围上。
柔性基板可包括聚对苯二甲酸乙二醇酯(PET)、聚萘二甲酸乙二醇酯(PEN)、聚醚砜(PES)、多芳基化合物(PAR)、聚碳酸酯(PC)、环烯共聚物(COC)、聚苯乙烯(PS)及聚酰亚胺(PI)中的至少一种。
连接柔性基板的两端可包括使用粘着剂将柔性基板的两端接合。
连接柔性基板的两端可包括使用熔接技术将柔性基板的两端接合。
柔性基板的两端之一可具有凹构造，柔性基板的两端的另一端可具有凸构造。
连接柔性基板的两端可包括以接合带围绕柔性基板的两端。
该方法可进一步包括在将至少一个半导体芯片安装在圆筒形基板上之后，将该至少一个半导体芯片模塑。该方法可进一步包括在将至少一个半导体芯片模塑之后，切割柔性基板而形成多个圆筒形封装体。
附图说明
通过以下结合附图的详细描述，以上及其他方面、特点及其他优点被明确地了解，其中：
图1为示出根据一个示范性实施例的圆筒形封装体的截面图；
图2为示出根据另一示范性实施例的圆筒形封装体的截面图；
图3A至3D为示出倒装芯片的互连部分的各种示例的截面图；
图4A至4E为示出根据示范性实施例的圆筒形封装体的制造方法的图；
图5A至5F为示出将柔性基板的两端彼此物理连接的方法的各种示例的截面图；
图6为示出包括根据示范性实施例的圆筒形封装体的电子产品的透视图；以及
图7为沿图6的线A-A’所取的水平截面图。
具体实施方式
以下参考附图详述示例性实施例。许多不同的形式及实施例为可行的，而不背离本公开的精神及教导，所以本公开不应解释为限于在此所述的示例性实施例。而是，提供这些示例性实施例以使本公开透彻而完整，且对本领域的技术人员传达本公开的范围。在附图中，为了清晰而可能将层及区域的大小及相对大小夸大。同样的附图标记通篇指示相同的元件。
在此所使用的词语“和/或”包括一种或多个相关所列项目的任何和全部组合。
图1为描述根据一个示例性实施例的圆筒形封装体的截面图。
参考图1，依照一个示范性实施例的圆筒形封装体可包括基板100、至少一个半导体芯片及模塑构件300。该至少一个半导体芯片可包括多个半导体芯片200、202、204、206、208、210、212与214。
基板100可为其中具有中空区域H的圆筒形基板。如图1所示，基板100在截面图中可为圆形。然而，基板100的截面图不限于圆形。例如在观看截面图时，基板100可为椭圆形。基板100应弯曲而使得在截面图中具有封闭环形，如圆形或椭圆形。因此，基板100可包括柔性材料。例如，基板100可包括聚对苯二甲酸乙二醇酯(PET)、聚萘二甲酸乙二醇酯(PEN)、聚醚砜(PES)、多芳基化合物(PAR)、聚碳酸酯(PC)、环烯共聚物(COC)、聚苯乙烯(PS)及聚酰亚胺(PI)中的至少一种。然而，基板100不限于以上的材料。
在另一个示范性实施例中，基板100可包括彼此连接的多个弧形分段(subsection)以组成在截面图为封闭环形的圆筒形基板。在此情形下，组成基板100的各弧形分段未必为柔性材料。
如上所述，圆筒形封装体可包括多个半导体芯片200、202、204、206、208、210、212与214。然而，为了易于及便于解释，以下仅以一个半导体芯片(例如，半导体芯片200)描述本示范性实施例。半导体芯片200可为半导体装置，例如，存储装置、逻辑装置、光电转换装置或功率装置。该半导体装置可包括至少一个无源元件，例如，至少一个电阻和/或至少一个电容。
粘着剂150可提供在半导体芯片200的底面与基板100的一部分外围表面100a之间。粘着剂150可将半导体芯片200固定于基板100。此外，半导体芯片200可以经由接合线160电连接到基板100。即，接合线160可将半导体芯片200的芯片焊垫(未示出)电连接到配置于基板100的外围表面100a上的基板焊垫102。连接焊垫104可配置于基板100的内围表面100b上。连接焊垫104可用于将半导体芯片200电连接另一电子产品。粘着剂150可包括涂覆材料或双面胶带。然而，粘着剂150不限于上述材料。可采用将半导体芯片200固定于基板100的任何类型的粘着剂。
半导体芯片200可被模塑材料300覆盖。模塑材料300可保护半导体芯片200使其免受外界环境的影响。模塑材料300可为环氧模塑化合物(EMC)材料。
图2为示出依照另一示范性实施例的圆筒形封装体的截面图，图3A至3D为描述倒装芯片的互连部分的各种示例的截面图。
参考图2、3A、3B、3C及3D，多个半导体芯片200、202、204、206、208、210、212与214可附接到圆筒基板100的外围表面100a。半导体芯片200～214可使用倒装芯片接合法被安装在外围表面100a上。即，可通过互连部分400将半导体芯片200～214中的每个芯片连接到基板100。
互连部分400可包括金属凸块402，该金属凸块402将各半导体芯片200～214的芯片焊垫220电连接到配置于基板100上的基板焊垫102，如图3A所示。圆筒形封装体可进一步包括填充半导体芯片200～214与基板100之间的空间的底填树脂450。每个金属凸块402可为单层凸块或多层凸块，其包括金(Au)、银(Ag)、铜(Cu)、铝(Al)、镍(Ni)、钨(W)、钛(Ti)、铂(Pt)、钯(Pd)、锡(Sn)、铅(Pb)、锌(Zn)、铟(In)、镉(Cd)、铬(Cr)与钼(Mo)中的至少一种。每个金属凸块402还可包括导电有机材料。金属凸块402可使用无电镀工艺、电镀工艺、蒸发工艺或溅镀工艺形成。每个金属凸块402可为金凸块、金柱凸块(gold stud bump)或镍凸块。金凸块可使用无电镀法或电镀法形成。此外，金凸块可使用凸块下冶金(UBM，under bump metallurgy)形成，其由Cr/Cu、Cr/Cu/Au、TiW/Au或Ti/Au形成。形成金柱凸块可包括使用引线接合机在各半导体芯片200～214的芯片焊垫220上形成柱凸块(例如，金球)。如此，可不使用凸块下冶金(UBM)可形成金柱凸块。镍凸块可使用无电镀法或电镀法形成。
在一些实施例中，可在金属凸块402与基板焊垫102之间提供导电粘着剂404，如图3B所描述。导电粘着剂404可改善金属凸块402与基板焊垫102之间的粘着强度。圆筒形封装体还可包括填充半导体芯片200～214与基板100之间的空间的底填树脂450。
在一些实施例中，各互连部分400可包括将芯片焊垫220电连接到基板焊垫102的焊料凸块406及焊料408，如图3C所描述。圆筒形封装体可进一步包括填充半导体芯片200～214与基板100之间的空间的底填树脂450。焊料408可表示熔点等于或低于约450摄氏度的金属合金。焊料凸块406可使用蒸发法、电镀法或丝网印刷法形成，且可在焊料凸块406下方另外提供凸块下冶金(UBM)。电镀法可使用共晶焊料(eutectic solder)，且UBM可包括钛-钨(TiW)合金。丝网印刷法可对应经由模板掩模(stencil mask)形成焊料(如，Pb/In/Ag焊料、Sn/Pb/In焊料或Cu/Sb/Ag/Au焊料)的方法。丝网印刷法可使用三种或更多组分系统的无铅焊料。丝网印刷法具有工艺简单的优点。
在一些实施例中，各互连部分400可包括将芯片焊垫220电连接到基板焊垫102的金属凸块410及各向异性导电膜420，如图3D所示。金属凸块410可为单层凸块或多层凸块，其包括金(Au)、银(Ag)、铜(Cu)、铝(Al)、镍(Ni)、钨(W)、钛(Ti)、铂(Pt)、钯(Pd)、锡(Sn)、铅(Pb)、锌(Zn)、铟(In)、镉(Cd)、铬(Cr)与钼(Mo)中的至少一种。各金属凸块410可进一步包括导电有机材料。金属凸块410可使用无电镀法、电镀法、蒸发法或溅镀法形成。各金属凸块410可为金凸块、金柱凸块或镍凸块。各向异性导电膜420可含有多个导电粒子420a。如果各向异性导电膜420可被加热及加压，则金属凸块410可经由导电粒子420a电连接到对应的基板焊垫102。导电粒子420a可包括金属粒子、涂有金属的塑胶粒子或涂有绝缘树脂的导电粒子。金属粒子可包括镍粒子、焊料粒子或银粒子，塑胶粒子可包括碳粒子、聚苯乙烯粒子或环氧树脂粒子。然而，导电粒子不限于上列材料。各向异性导电膜420可包含赋予各向异性导电膜420粘着性质的粘着剂。粘着剂可包括热塑性树脂、热固性树脂与紫外线可固化树脂中的至少一种。热塑性树脂可为聚乙烯型树脂或聚丙烯型树脂，热固性树脂可包括环氧型树脂、聚亚安酯型树脂或丙烯酸型树脂。然而，粘着剂不限于上列材料。
图4A至4E为示出根据一个示范性实施例制造圆筒形封装体的方法的图，图5A至5F为示出将柔性基板两端物理地彼此连接的方法的各种示例的截面图。
参考图4A，可在基板100之中及之上形成例如通孔(未示出)及导电焊垫的电路图案。通孔及导电焊垫可形成为将半导体芯片电连接到外部电子装置。例如，导电焊垫可包括基板焊垫102及连接焊垫104。基板焊垫102可形成于基板100的第一表面100a上且可电连接到配置于第一表面100a上的半导体芯片，连接焊垫104可形成于基板100的与第一表面100a相反的第二表面100b上且可电连接外部电子装置。基板100可由聚对苯二甲酸乙二醇酯(PET)、聚萘二甲酸乙二醇酯(PEN)、聚醚砜(PES)、多芳基化合物(PAR)、聚碳酸酯(PC)、环烯共聚物(COC)、聚苯乙烯(PS)及聚酰亚胺(PI)中的至少一种塑胶材料形成。然而，基板100不限于上列塑胶材料。
参考图4B及图5A至5F，可将图4A所示的平坦基板100弯曲为将基板100的两端(第一与第二端)彼此物理连接。结果平坦基板100可变形成为其中具有中空区域H的圆筒形基板100。
在一些实施例中，一端(例如，第一端)100c与另一端(例如，第二端)100d可使用粘着剂110而彼此物理地结合。此外，基板100的两端(例如第一与第二端)100c与100d可被接合带(bonding band)112围绕，以防止第一端与第二端彼此脱离(参考图5A)。
在一些实施例中，第一端100c与第二端100d可彼此接触且可被加热一段时间以将它们彼此物理连接。即，第一端100c与第二端100d可使用熔接技术彼此接合。在此情形下，可将第一端100c与第二端100d熔化及彼此结合，因而在第一端100c与第二端100d之间形成熔接界面100e。此外，熔化区114可形成为邻近熔接界面100e(参考图5B)。熔化区114可对应于基板100的邻近第一端100c与第二端100d的部分被熔化且冷却的区域。
在一些实施例中，第一端100c与第二端100d的每个可包括具有放大的表面面积以增强第一端100c与第二端100d之间的粘着强度的结构。例如，第一端100c可具有
Figure BDA0000110381810000071
形截面，第二端100d可具有
Figure BDA0000110381810000072
形截面，如图5C所示。第一端100c与第二端100d可通过配置于其间的粘着剂110而彼此物理接合。
在一些实施例中，第一端100c可具有
Figure BDA0000110381810000073
形截面，第二端100d可具有
Figure BDA0000110381810000074
形截面，如参考图5C所描述。此外，第一端100c与第二端100d可使用参考图5B所揭示的熔接技术而物理地彼此结合。因此，可在第一端100c与第二端100d之间形成熔接界面110e，且熔化区114可形成为邻近熔接界面110e(参考图5D)。
在一些实施例中，第一端100c可具有
Figure BDA0000110381810000075
形截面，第二端100d可具有
Figure BDA0000110381810000076
形截面，如参考图5C所揭示。此外，第一端100c与第二端100d可使用固定构件120而物理地彼此组合(参考图5E)。
在一些实施例中，第一端100c可具有凹构造(female configuration)，第二端100d可具有凸构造(male configuration)。或者，第一端100c可具有凸构造，第二端100d可具有凹构造。可将第一端100c与第二端100d之一(具有凸构造)插入另一个(具有凹构造)而将它们彼此组合。另外，第一端100c与第二端100d可使用固定构件120更紧密地彼此组合(参考图5F)。
在其他实施例中，第一端100c与第二端100d的接合方法可使用参考图5A至5F所描述的实施例的组合而进行。例如，在将具有凸构造和凹构造的第一端100c和第二端100d彼此组合之后，第一端100c与第二端100d可使用参考图5B所揭示的熔接技术、使用参考图5A所揭示的接合带112和/或使用参考图5E所揭示的固定构件120而更紧密地接合。
参考图4C，可将至少一个半导体芯片，例如，多个半导体芯片200、202、204、206、208、210、212与214，安装在圆筒形基板100的外围表面100a上。可使用引线接合技术或倒装芯片接合技术将至少一个半导体芯片安装在外围表面100a上。具体而言，可在圆筒形基板100的中空区域H中装设转轴(未示出)，且可在圆筒形基板100转动时将至少一个半导体芯片安装在圆筒形基板100的外围表面100a上。或者，可不必转动圆筒形基板100而使用转动芯片安装装置将至少一个半导体芯片安装在圆筒形基板100的外围表面100a上。
参考图4D，至少一个半导体芯片可被模塑材料覆盖。模塑材料可包括环氧树脂。模塑材料可进一步包括硬化剂、硬化加速剂、填料及其他添加剂中的至少一种。环氧树脂可包括双酚型环氧、苯酚酚醛(phenol novolac)型环氧、甲酚酚醛(cresol novolac)型环氧、多官能环氧、胺型环氧、含杂环环氧(heterocycle containing epoxy)、取代环氧(substitutional epoxy)、萘酚型环氧及其衍生物中的至少一种。然而，环氧树脂可不限于上列材料。硬化剂可包括胺硬化剂、酸酐硬化剂、聚酰胺树脂、聚硫树脂及苯酚树脂中的至少一种。然而，硬化剂可不限于上列材料。硬化加速剂可用于将环氧树脂与硬化剂之间的硬化反应加速，且可使用任何将该硬化反应加速的材料。例如，硬化加速剂可为胺化合物材料(例如，三乙胺、苄基二甲胺、α-甲基苄基二甲胺或1，8-二氮双环-十一碳烯-7(1，8-diazabicyclo-undecene-7))、咪唑化合物材料(例如，2-甲基咪唑、2-苯基咪唑(2-phenilimidazole)或2-苯基-4-甲基咪唑)或有机磷化合物材料(例如，柳酸、酚、三苯膦、三丁膦(tributhylphosphine)、三(对甲基苯基)膦(tri(p-methylphenil)phosphine)、三苯膦三苯基硼酸酯(triphenilphosphine triphenilborate)或四苯膦四苯基硼酸酯(tetraphenilphosphine tetraphenilborate))。然而，硬化加速剂可不限于上列材料。填料可包括有机填料和无机填料中的至少一种。无机填料可包括滑石、砂、硅石、碳酸钙、石英、玻璃纤维、石墨、氧化铝、氧化锑、BaTiO3及膨润土中的至少一种。有机填料可包括酚树脂及脲甲醛中的至少一种。然而，填料可不限于上列材料。模塑材料可进一步包括气溶胶(具有胶体相的硅石)和/或膨润土型粘土填料，以赋予环氧树脂触变特性。其他的添加剂可包括着色剂(例如，有机染料或无机染料)、偶联剂(coupling agent)和/或消泡剂。
参考图4E，可对包括模塑半导体芯片的圆筒形基板施加分割工艺(singulation process)。分割工艺对应于将包括模塑半导体芯片的圆筒形基板分为多个圆筒形封装体P1、P2、P3、P4和P5的切割工艺。在仅将单一半导体芯片安装在圆筒形基板100上的情况下，可省略分割工艺。
根据图4A至4E所示的示范性实施例，至少一个半导体芯片是在形成圆筒形基板100之后安装在圆筒形基板100上。然而，本发明不限于图4A至4E所示的示范性实施例。例如，在将至少一个半导体芯片安装到平坦柔性基板100之后，可将平坦柔性基板100弯曲，而形成截面图中为封闭环形1(如，圆形或椭圆形)的圆筒形基板100。
图6为示出包括根据示范性实施例的圆筒形封装体的电子产品的透视图，图7为沿图6的线A-A’所取的水平截面图。
参考图6及7，可将电子模块500配置在依照示范性实施例的圆筒形封装体的内部区域(例如，中空区域)中。电子模块500可电连接到圆筒形封装体。电子模块500中亦可具有中空区域，且冷却介质600可流经电子模块500的中空区域以将被加热的圆筒形封装体及电子模块500冷却。由于先前的实施例已描述了圆筒形封装体，所以以下省略对圆筒形封装体的说明。冷却介质600可包括水，如去离子水(或蒸馏水)，或其他冷却剂。
依照上述示范性实施例，圆筒形封装体可提供为包括圆筒形基板及安装在圆筒形基板的外围上的至少一个半导体芯片。如此，即使半导体芯片扭曲，圆筒形封装体仍可承受半导体芯片的扭曲而降低半导体芯片与圆筒形基板之间的物理应力。结果，圆筒形封装体可增加半导体芯片的设计弹性，且可用于弯曲的电子产品。
以上仅为了例证的目的而描述了本发明的示范性实施例。本领域的技术人员应了解，在不脱离本发明的权利要求的精神和范围的前提下，可以进行各种修改、添加及替代。
本发明要求于2010年11月19日向韩国专利局提交的韩国申请第10-2010-0115716号的优先权，其全部内容通过引用结合于此。

Claims (19)

1.一种圆筒形封装体，包括：
具有中空区域的圆筒形基板；以及
至少一个安装在所述圆筒形基板的外围上的半导体芯片。
2.如权利要求1的圆筒形封装体，其中所述圆筒形基板为柔性基板。
3.如权利要求1的圆筒形封装体，其中所述圆筒形基板包括聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯、聚醚砜、多芳基化合物、聚碳酸酯、环烯共聚物、聚苯乙烯及聚酰亚胺中的至少一种。
4.如权利要求1的圆筒形封装体，还包括将至少一个半导体装置的芯片焊垫电连接到所述圆筒形基板的基板焊垫的接合线。
5.如权利要求4的圆筒形封装体，还包括在所述圆筒形基板的外围与所述至少一个半导体芯片的底面之间的粘着剂。
6.如权利要求1的圆筒形封装体，还包括将至少一个半导体装置的芯片焊垫电连接到所述圆筒形基板的基板焊垫的互连部分。
7.如权利要求6的圆筒形封装体，其中所述互连部分包括金属凸块及焊料凸块。
8.如权利要求6的圆筒形封装体，其中所述互连部分包括各向异性导电膜。
9.如权利要求1的圆筒形封装体，还包括覆盖所述至少一个半导体芯片的模塑材料。
10.一种电子产品，包括：
圆筒形封装体，
其中所述圆筒形封装体包括：
具有中空区域的圆筒形基板；以及
至少一个安装在所述圆筒形基板的外围上的半导体芯片。
11.如权利要求10的电子产品，还包括流经所述圆筒形封装体的中空区域的冷却介质。
12.一种制造圆筒形封装体的方法，所述方法包括：
在具有第一表面和与所述第一表面相反的第二表面的平坦柔性基板上形成电路图案；
连接所述柔性基板的两端，以形成圆筒形柔性基板；以及
将至少一个半导体芯片安装在所述圆筒形柔性基板的外围上。
13.如权利要求12的方法，其中所述柔性基板包括聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯、聚醚砜、多芳基化合物、聚碳酸酯、环烯共聚物、聚苯乙烯及聚酰亚胺中的至少一种。
14.如权利要求12的方法，其中连接所述柔性基板的两端包括使用粘着剂将所述柔性基板的两端接合。
15.如权利要求12的方法，其中连接所述柔性基板的两端包括使用熔接技术将所述柔性基板的两端接合。
16.如权利要求12的方法，其中所述柔性基板的两端之一具有凹构造，所述柔性基板的两端的另一端具有凸构造。
17.如权利要求12的方法，其中连接所述柔性基板的两端包括以接合带围绕所述柔性基板的两端。
18.如权利要求12的方法，还包括在将所述至少一个半导体芯片安装在所述圆筒形基板上之后，将所述至少一个半导体芯片模塑。
19.如权利要求18的方法，还包括在将所述至少一个半导体芯片模塑之后，切割所述柔性基板以形成多个圆筒形封装体。
CN2011103716293A 2010-11-19 2011-11-21 圆筒形封装体及其制造方法、电子装置 Pending CN102479757A (zh)

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