CN102456635A - 具有带多个同样构造导体迹线组的基底的功率半导体模块 - Google Patents

具有带多个同样构造导体迹线组的基底的功率半导体模块 Download PDF

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CN102456635A
CN102456635A CN2011103453086A CN201110345308A CN102456635A CN 102456635 A CN102456635 A CN 102456635A CN 2011103453086 A CN2011103453086 A CN 2011103453086A CN 201110345308 A CN201110345308 A CN 201110345308A CN 102456635 A CN102456635 A CN 102456635A
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power semiconductor
conductive traces
substrate
semiconductor modular
load connecting
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CN102456635B (zh
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克里斯蒂安·约布尔
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Semikron GmbH and Co KG
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Abstract

本申请涉及一种具有带多个同样构造导体迹线组的基底的功率半导体模块，带有基底和至少两个负载连接元件，该基底具有多个围绕基底的中点同心布置的导体迹线组。每个导体迹线组设置有不同电势的至少两个导体迹线，并且在这些导体迹线中的至少两个上分别设置有功率半导体器件。负载连接元件分别具有基体和至少一个接触元件，其中，基体相对彼此且相对于基底的中点同心地以及彼此紧邻地布置。此外，各接触元件处在与所配属的导体迹线的接触面的或者与至少一个布置在导体迹线上的功率半导体器件的接触面的导电接触中。

Description

具有带多个同样构造导体迹线组的基底的功率半导体模块
技术领域
本发明介绍了一种半导体模块，所述半导体模块具有至少一个基底、布置在所述基底的导体迹线上的半导体元件和电路适宜的连接装置。根据一般公知的现有技术，这种功率半导体模块具有多个不同的电路拓扑。最广泛公知的是带有两个功率开关或整流电路的半桥电路电路，所述整流电路具有功率二极管和/或功率晶闸管。
背景技术
由还未发表的DE 10 2009 037 257 A1示例性地公知这种功率半导体模块。该功率半导体模块具有底板和布置在所述底板上的多个基底，其中，为了电路适宜地布置功率半导体器件，在每个基底上设置导体迹线。此外，所述功率半导体模块具有负载连接元件，所述负载连接元件与基底接触并且具有外部连接装置。这些负载连接元件以如下方式构造，即，这些元件彼此紧邻地分布在基本区段上，以便使不期望的寄生电感保持得尽可能小。
此外，例如由DE 10 2006 006 425 A1公知的是，功率半导体模块无底板地构造成，并且通过加压装置与基底导电地连接。此外，带状构造的负载连接元件具有单独的接触引脚，所述接触引脚传过壳体的缺口穿伸到基底。同样在这个设计方案中，负载连接元件在基本区段彼此平行且紧邻地布置。
发明内容
本发明基于如下任务，即，设想一种功率半导体模块，所述功率半导体模块在紧凑的结构中使得有效率地散热到冷却装置成为可能，并且具有有效率的、以低寄生电感造成的内部电流导通。
根据本发明，该任务通过带有权利要求1的特征的功率半导体模块来解决。优选的实施方式在从属权利要求中介绍。
根据本发明的功率半导体模块具有至少一个基底，所述基底用于直接布置在冷却装置上或用于布置在优选金属的底板上。基底构造了功率半导体模块的功率电子电路的电路载体。优选的是，基底由合成材料壳体覆盖，该合成材料壳体也包围功率半导体模块的其它内部组件，并且对接触电绝缘。
基底本身优选以如下方式构造，即，所述基底的背离功率半导体模块内部的一侧与内部电路电绝缘并且仅用于将热引走到冷却装置。对于该设计方案而言，特别优选两侧铜包覆的基底，其中，面向功率半导体模块内部的铜覆层在其内部结构化，并且这样构造成电路的导体迹线。外部的铜覆层主要用于有效率的散热，并且由此构造功率半导体模块的外侧(多为底面)。
根据本发明的功率半导体模块在至少一个基底上具有多个围绕基底的中点同心布置的导体迹线组。在这种情况下，导体迹线组理解为至少两个用于引导不同电势的导体迹线的布置。
在共同的导体迹线组的不同电势的这些导体迹线中的至少两个上分别设置有至少一个功率半导体器件。例如，在半桥电路的情况下，两个导体迹线设有不同符号的直流电压电势，且另一个导体迹线设有交变电压电势。第一半导体开关优选地由双极的功率晶体管和功率二极管的反并联连接电路构造，在这种情况下，在导体迹线上布置有正的直流电压电势，第二半导体开关布置在带有交变电势的导体迹线上。用于构造半桥电路的电路适宜的连接借助模块内部的例如设计为打线接合连接的连接装置构造。
作为备选地，显然也可设置其它功率半导体器件如晶闸管或场效应管，由此几乎可以实现任意的其它电路拓扑。
此外优选的是，基底呈盘形地构造有呈圆形的底面，并且导体迹线组构成基底的扇形。在这种情况下尤其优选的是，设置有恰好三个、二的低倍数、或者恰好五个扇形。通过该设计方案实现了功率半导体模块的特别紧凑的构造。
此外有利的是，所有的导体迹线组同样方式地以相同的几何设计方案构造，并且彼此偏转地布置。对此，例如是扇形的导体迹线也就是导体迹线组，功率半导体器件布置在其上，构造为在径向上彼此跟随的扇形段。在这种情况下，每个扇形段的功率半导体器件都特别有效地得到冷却。
此外，功率半导体模块具有配属于基底电势的负载连接元件，所述负载连接元件分别具有基体和至少一个接触元件。至少两个、优选是正的和负的直流电压电势的那些负载连接元件的基体相对彼此且相对基底的中点同心地布置。此外优选的是，每一个基体圆柱对称地构造，优选构造为空心圆柱。通过在近邻的基体中的内部电流导通，通过电流(例如在半桥的换向阶段期间)产生的寄生电感特别小。此外，这实现了高载流能力的有效率的电流导通。
优选的是，至少一个接触元件与基体一件式地构造，并且负载连接元件电传导地与所配属的导体迹线或与至少一个布置在导体迹线上的功率半导体器件连接。优选地，每个负载连接元件具有外部连接装置，所述外部连接装置由负载连接元件的一部分本身以及接触装置例如以螺纹连接方式组成。
此外有利的是，基底具有中心缺口。当负载连接元件，具体而言是所述负载连接元件的接触元件，力锁合地(kraftschlüssig)与基底的或功率半导体器件的至少一个接触面连接时，这是非常有利的。在这种情况下，借助于加压装置的穿过中心缺口到达的导入压力的装置而可行的是，将压力导入到负载连接元件上，进而导入到所述负载联接元件的对称于中点的力锁合的接触上。
作为对于负载连接元件与基底的导体迹线的或与布置在这样的导体迹线上的功率半导体器件的力锁合连接的备选，材料锁合的(stoffschlüssig)连接例如借助于钎焊或加压烧结可能同样是有利的。
附图说明
对本发明的解决方案根据图1至图4中的实施例作进一步阐释。
图1示意性地示出半桥电路。
图2以俯视图示出根据本发明的功率半导体模块的第一设计方案。
图3以俯视图示出根据本发明的功率半导体模块的第二设计方案。
图4以横截面示出该第二设计方案。
具体实施方式
图1示意性地示出具有第一和第二功率开关12、22的半桥电路，其中，所述功率开关构造为带有反并联连接的二极管12b、22b的双极的晶体管12a、22a。不言而喻地，也能代替一个晶体管地设置多个并联连接的晶体管。以上同样也适用于二极管。在所述电路拓扑中，第一功率开关12接在正的直流电压电势和交变电势(电路输出)之间。第二功率开关22接在交变电势和负的直流电压电势之间。
图2以俯视图示出根据本发明的带有半桥电路的电路拓扑的功率半导体模块1(参见图1)的第一设计方案。此处，功率半导体模块1具有基底2，所述基底具有5个由点状虚线简示出的导体迹线组4，其中，当然不是在每一个导体迹线组中示出所有细节。
在这种情况下，基底2构造为呈盘形的工业陶瓷，在所述工业陶瓷上导体迹线组4的导体迹线10、20、30构造为铜覆层。每一个导体迹线组4构成扇形，其中五个扇形中的每一个原则上相同，也就是说以相同的几何设计方案构造。五个扇形彼此偏转地布置，并由此构造成完整的圆。
每一个导体迹线组4本身由三个不同电势的导体迹线10、20、30组成，其中，在导体迹线组4的直接连到基底2的中点处的第一扇形段41中，布置有这样的带有正的直流电压电势的导体迹线10。在径向上跟随在后的扇形段42中布置有带有交变电势的导体迹线20，而侧向于在径向上彼此跟随的两个扇形段41、42地在另一个扇形段43中布置有带有负的直流电压电势的导体迹线。
在两个并联连接的双极的功率晶体管12a的设计方案中，在带有正的直流电压电势的导体迹线10上布置有第一功率开关12(参见图1)和与所述第一功率开关反并联连接的功率二极管12b。在与第一相同的设计方案中，在带有交变电势的导体迹线20上布置有第二功率开关22(参见图1)。为了电路适宜地将功率半导体器件12a/b、22a/b互连接接或与导体迹线20连接，存在多个打线接合连接84作为模块内部连接装置，所述金属接合连接仅简要示出。
为了获得对称的电流分布，此处完全有利的是，导体迹线组4的相应第二功率开关22不仅在所述导体迹线组内部连接，而且也与相邻的导体迹线组的带有负的直流电压电势的导体迹线连接。
由此，基底2围绕通过所述基底中点的直线圆柱对称地构造。这种设计方案尤其适用于设置负载连接元件50、60、70，所述负载连接元件同心地围绕基底2的中点布置。对此，所述负载连接元件50、60、70分别具有构造为空心圆柱的基体52、62、72。各个空心圆柱的位置通过点划线14、24、34示出。此外，所述负载连接元件50、60、70中的每一个具有至少一个接触元件54、64、74，所述接触元件与所配属的导体迹线10、20、30的所配属的接触面16、26、36导电地连接。
图3以俯视图和与图2类似的表现方式示出了根据本发明的功率半导体模块1的第二设计方案，而图4以横截面示出了该第二设计方案。所述功率半导体模块1又具有呈盘形的基底2，所述基底具有圆形的底面。正方形的或者呈矩形的底面也是完全可以设想的。
在这个设计方案中，基底2具有六个构造为扇形的导体迹线组4，如通过点状虚线所简示出的那样。这些导体迹线组4中的每一个由两个在径向上彼此跟随的、带有近似相等面积的扇形段41、42组成，由此，功率半导体器件12a/b、22a/b的呈废热形式的功耗也相应地分布到相同的面积上，并且被排走到可布置在基底2的下侧上的冷却装置中。此外，铜覆层8也用在基底2的背离功率半导体模块1内部的一侧上，该基底此外由呈盘形的工业陶瓷6例如氧化铝构成。在基底2的朝向功率半导体模块1内部的一侧上同样设置有然而其本身是结构化的铜覆层，所述铜覆层构造成导体迹线10、20、30。
六个导体迹线组4中的每一个在其原则上的几何设计方案中是一致的，但它们分别相对彼此偏转60°地构造，并且布置在呈盘形的基底2上。
此处，每个导体迹线组4仅由一个带有正的直流电压电势且一个带有交变电压电势的两个导体迹线10、20构成，其中，在这两个导体迹线上布置有各一个构造有两个双极晶体管12a、22a和功率二极管12b、22b的功率开关12、22(参见图1)。功率半导体器件12a/b、22a/b的电路适宜的连接例如又借助打线接合连接84进行，其中，显然也可以设置其它的内部连接装置并且可能是有利的。
负载连接元件50、60、70原则上与根据图2所示的那样相同地构造，并且具有构造为空心圆柱的基体52、62、72，所述基体朝向基底2地分别具有至少一个接触元件54、64、74。配属于正的直流电势和交流电势的负载连接元件50、60分别具有多个接触装置52、62，所述接触装置与所配属的导体迹线10、20的接触面16、26电传导地连接。
配属于负的直流电势的负载连接元件70同样具有多个接触装置72，然而这些接触装置分别与布置在带有交变电压电势的导体迹线20上的功率半导体器件22a/b的接触面38电传导地连接。对此，功率半导体器件22a/b能具有特别适合地设计的表面，例如呈特别厚的接触金属层形式的表面。
配属于直流电压电势的负载连接元件50、70的基体52、72同心地围绕基底2的中点并且彼此紧邻地布置。为了能构造这种紧邻的布置，此处两个所述负载连接元件50、70的接触装置52、72被弯折，其中，所述弯折接近基底2地设置，以便总体上将在负载连接元件50、70之间的电流流过的面积进而寄生电感保持得小。
此处，配属于交变电压电势的负载连接元件60的接触元件62不构造有这种弯折。
各个构造为空心圆柱的基体52、62、72的高度原则上在较宽范围内是任意的，并且在大多数有利的情况下相比基底2的半径明显更小。
此外，各个负载连接元件50、60、70具有外部连接装置56、66、76，此处，这些外部连接装置例如构造为与基体52、62、72一件式连接的、平行于基底2设置的区段。这些区段分别具有用于实现将螺钉与螺钉接纳部连接的缺口，这些螺钉接纳部例如可布置在未示出的壳体内。不言而喻地，可作为备选而设置其它连接变型方案。
负载连接元件50、60、70的接触装置52、62、72的电传导的连接可与导体迹线10、20的接触面16、26或与功率半导体器件22a/b的接触面38借助材料锁合的方法构造。在所示出的设计方案中这种连接借助力锁合的方法构造。对此，功率半导体模块具有加压装置80，所述加压装置将压力朝着基底2的方向导入到负载连接元件50、60、70上。
此外，基底2具有中心缺口82，加压装置80的产生压力的装置穿过该中心缺口82并够到底板或冷却装置。

Claims (10)

1.功率半导体模块(1)，所述功率半导体模块具有至少一个基底(2)和至少两个负载连接元件(50、60、70)，所述基底具有多个同心地围绕所述基底的中点布置的导体迹线组(4)，其中，每个导体迹线组(4)设置有不同电势的至少两个导体迹线(10、20、30)，并且在不同电势的至少两个导体迹线(10、20)上分别设置有至少一个功率半导体器件(12a/b、22a/b)，所述负载连接元件分别具有基体(52、62、72)和至少一个接触元件(54、64、74)，其中，所述基体(52、62、72)相对彼此且相对于所述基底(2)的中点同心地以及彼此紧邻地布置，并且其中，各自至少一个接触元件(52、62、72)处在与所配属的导体迹线(10、20、30)的接触面(16、26、36)或者与至少一个布置在导体迹线(20)上的功率半导体器件(22a、22b)的接触面(38)的导电接触中。
2.根据权利要求1所述的功率半导体模块，其中，
每个导体迹线组(4)设置有恰好三个导体迹线(10、20、30)，一个带有正的电势、一个带有负的电势且一个带有交变的电势，并且在这种情况下，在带有正的直流电压电势的那个导体迹线(10)上和在带有交变的电势的那个导体迹线(20)上设置有所述功率半导体器件(12a/b、22a/b)。
3.根据权利要求1所述的功率半导体模块，其中，
所述至少一个所述功率半导体器件构造为晶闸管、二极管、场效应管，或构造为由双极晶体管(12a、22a)和反并联连接的二极管(12b、22b)构成的组合。
4.根据权利要求1所述的功率半导体模块，其中，
至少一个负载连接元件(50、60、70)的所述基体(52、62、72)构造为带有与其一件式连接的接触元件(52、62、72)的空心圆柱。
5.根据权利要求1所述的功率半导体模块，其中，
配属于正的和负的电势的所述负载连接元件(50、70)的所述基体(52、72)彼此紧邻地且彼此电绝缘地布置。
6.根据权利要求1所述的功率半导体模块，其中，
所述负载连接元件(50、60、70)额外地具有外部的连接装置(56、66、76)。
7.根据权利要求1所述的功率半导体模块，其中，
所述基底(2)呈盘形地构造，并且所述导体迹线组(4)设计为扇形。
8.根据权利要求1所述的功率半导体模块，其中，
所有导体迹线组(4)相同方式地以同样的几何设计方案构造，并且相对彼此偏转地布置
9.根据权利要求1所述的功率半导体模块，其中，
所述基底(2)具有中心缺口(82)。
10.根据权利要求1所述的功率半导体模块，其中，
所述负载连接元件与所述基底或所述功率半导体器件力锁合地连接，并且借助于加压装置(80)的穿过所述中心缺口(80)的产生压力的装置将压力导入到所述负载连接元件(50、60、70)上，用于使所述负载连接元件与所述接触面(16、26、36、38)力锁合地接触。
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