CN102446906B - 集成电路器件及其制造方法 - Google Patents

集成电路器件及其制造方法 Download PDF

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Publication number
CN102446906B
CN102446906B CN201110301699.1A CN201110301699A CN102446906B CN 102446906 B CN102446906 B CN 102446906B CN 201110301699 A CN201110301699 A CN 201110301699A CN 102446906 B CN102446906 B CN 102446906B
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Prior art keywords
antenna
wafer
wireless enabled
substrate
functional block
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CN201110301699.1A
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CN102446906A (zh
Inventor
萨姆·齐昆·赵
阿玛德雷兹·罗弗戈兰
阿里亚·贝扎特
吉泽斯·卡斯塔涅达
迈克尔·伯尔斯
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Zyray Wireless Inc
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Zyray Wireless Inc
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Abstract

本发明涉及集成电路器件及其制造方法。集成电路(IC)器件设置包含基底、与基底连接的IC晶片、与IC晶片连接的天线、以及与IC晶片连接的第一无线使能功能块。第一无线使能功能块用于与连接于基底的第二无线使能功能块通信。天线用于与连接于另一器件的另一天线通信。

Description

集成电路器件及其制造方法
技术领域
本发明通常涉及集成电路(IC)器件，更具体地，涉及牵涉IC器件的通信。
背景技术
典型地，集成电路(IC)器件包含嵌入在封装中的IC晶片。IC器件可与印刷电路板(PCB)连接从而使能IC器件与连接在PCB板上的其他器件之间进行通信。例如，在阵列式封装中，IC晶片通常与基底连接，所述基底与一批连接元件(例如，一批焊球)连接。然后，该批连接元件与PCB物理连接。
IC晶片可以各种方式与基底连接。例如，在晶片向下(die-down)倒装芯片封装中，焊球可用于连接IC晶片表面的接触焊盘与位于基底上的接触焊盘。在另一实例中，线焊可用于连接IC晶片表面的接合焊盘与位于基底上的接合指(bondfinger)。
但是，连接IC晶片与基底的传统方式可能是昂贵的。例如，用于制造线焊的材料(例如，金)可能是昂贵的，因此增加了整个器件的成本。另外，连接IC晶片与基底的传统方式还可能受制造缺陷的影响。例如，在制造过程中，线焊和/或焊接凸点可能破裂或受损坏，降低了IC器件的生产量。
另外，连接不同IC器件的传统方式还可能具有缺点。例如，当使用PCB将IC器件连接在一起时，在制造或现场应用过程中，用于连接IC器件和PCB的元件可能破裂或受损坏。
于是，所需要的是提供高性价比、以及IC晶片与基底之间和不同IC晶片之间可靠互连的IC器件。
发明内容
这里描述的实施例中，提供集成电路(IC)器件以及组装IC器件的方法。在一个实施例中，IC器件包含基底、与所述基底连接的IC晶片、与所述IC晶片连接的天线以及与所述IC晶片连接的第一无线使能功能块。所述第一无线使能功能块用于与所述基底连接的第二无线使能功能块通信。所述天线用于与另一器件连接的另一天线通信。
在另一实施例中，制造IC器件的方法包含提供IC晶片、在所述IC晶片上形成天线、在所述IC晶片上形成第一无线使能功能块、并且连接所述IC晶片与基底。所述天线用于与另一器件连接的另一天线通信。所述第一无线使能功能块用于与所述基底连接的第二无线使能功能块通信。
在另一实施例中，IC器件包含IC晶片和与所述IC晶片连接的天线。所述天线用于与另一器件连接的另一天线通信。
根据本发明的一个方面，构造一种集成电路(IC)器件包括：
基底；
与所述基底连接的IC晶片；
与所述IC晶片连接的天线，其中所述天线用于与连接于另一器件的另一天线通信；
与所述IC晶片连接的第一无线使能功能块(wirelesslyenabledfunctionalblock)，其中所述第一无线使能功能块用于与连接于所述基底的第二无线使能功能块通信。
优选地，所述天线包括偶极天线(dipoleantenna)和贴片天线(patchantenna)中的至少一个。
优选地，所述IC器件还包括包含所述天线的天线层(antennaplane)。
优选地，所述天线层包括电容器、电感器、线圈和不平衡转换器中的至少一个。
优选地，所述天线层包括与所述IC晶片连接的金属带。
优选地，所述天线层包括与所述基底连接的可蚀刻金属层。
优选地，所述天线从所述IC晶片向所述基底散布热量。
优选地，所述天线与所述基底连接。
优选地，所述天线包括缝隙天线(slotantenna)和贴片天线中的至少一个。
优选地，所述IC器件还包括与所述IC晶片和所述基底连接的散热器。
优选地，所述散热器包括波导管。
优选地，所述第一无线使能电路块通过通道(via)与所述天线连接。
优选地，所述IC器件还包括具有绝缘层和可蚀刻金属层的第二基底，其中所述可蚀刻金属层包含所述天线。
优选地，所述第一无线使能电路块包括收发器。
根据其他方面，提供一种制造集成电路(IC)器件的方法，包括：
提供IC晶片；
在所述IC晶片上形成天线，其中所述天线用于与连接于另一器件的另一天线通信；
在所述IC晶片上形成第一无线使能功能块；以及
连接所述IC晶片与基底，其中所述第一无线使能功能块用于与连接于所述基底的第二无线使能功能块通信。
优选地，形成所述天线包括形成偶极天线或形成贴片天线。
优选地，形成所述天线包括形成包含所述天线的天线层。
优选地，所述方法还包括将所述天线连接于所述基底。
优选地，所述方法还包括将散热器连接于所述IC晶片。
根据一个方面，提供集成电路(IC)器件，包括：
IC晶片；以及
与所述IC晶片连接的天线，其中所述天线用于与连接于另一器件的另一天线通信。
鉴于本发明的以下详细描述，这些以及其他优点和特征将显得非常明显。注意的是，发明内容和摘要部分可能描述发明人所预期的一个或多个、而不是本发明的全部示例性实施例。
附图说明
这里所包含的并形成部分说明书的附图阐述了本发明、并且与描述一起进一步用于解释本发明的原理以及使本领域技术人员能够制造和使用本发明。
图1是传统的晶片向下球栅阵列(BGA)封装的截面图；
图2和3是根据本发明实施例的晶片向下IC器件的截面图；
图4是根据本发明实施例的无线使能功能块的示意图；
图5和6是根据本发明实施例的天线层的俯视图；
图7是根据本发明实施例的IC封装的截面图；
图8是根据本发明实施例的天线的俯视图；
图9是根据本发明实施例的IC封装的截面图；
图10是根据本发明实施例的天线的俯视图；
图11是根据本发明实施例的IC封装的截面图；
图12是根据本发明实施例的波导管结构的俯视图；
图13是根据本发明实施例的组装IC器件的示例性步骤的流程图。
现在将参照附图描述本发明。附图中，相同标号表示相同或功能相似的元件。另外，标号的最左位表明该标号首次出现其中的图号。
具体实施方式
说明书中提到的“一个实施例”、“实施例”、“示例性实施例”等表明所描述的实施例可包含特定的特征、结构或特性，但是每个实施例可能未必包含该特定特征、结构或特性。此外，上述短语未必指的是相同实施例。进一步地，当与实施例相关地描述特定特征、结构或特性时，认为的是不论是否精确描述，使与其他实施例相关的上述特征、结构或特性生效是在本领域技术人员的知识范围内。
另外，应该理解的是，这里使用的空间描述(例如，“在...上”、“在...下”、“左边”、“右边”、“上”、“下”、“顶部”、“底部”等)仅仅用于说明，并且这里描述的结构的实际实现可以是在任一方位或以任一方式空间设置。
传统封装
图1是传统的晶片向下球栅阵列(BGA)封装100的截面图。BGA封装100包含通过焊接凸点(solderbumps)130、与基底120的顶面125连接的晶片110。BGA封装110是晶片向下封装，在所述封装中晶片110的活性表面(activesurface)115面对基底120。另一方面，在晶片向上封装中，晶片的活性表面背对基底。
活性表面115通常包含电源、接地布线轨迹和输入/输出接触焊盘。多个焊接凸点130可以从倒装芯片晶片110的活性表面115的一边分布到另一边，从而分别将倒装芯片晶片110与基底120连接。如图1中所示，焊接掩膜190包围焊接凸点130所在的区域。
在图1的实施例中，通道(vias)140将基底120顶面125的焊接凸点130、迹线和/或通道焊盘(viapad)150连接至基底120底面的焊球180。如图1中所示，基底120可以包含凸点焊盘(bumppad)160和球焊盘(ballpad)170。凸点焊盘160与基底120顶面125的焊接凸点130连接。球焊盘170与基底120底面的焊球180连接。焊球180可以将倒装芯片BGA封装100与任一适合的、具有导电连接的表面(例如PCB)电连接。
示例性实施例
这里描述的实施例中，提供包含与IC晶片连接的天线的IC封装。天线可用于与其他IC器件通信。天线还可与IC晶片上的第一无线使能功能块连接。第一无线使能功能块可用于与基底上的第二无线使能功能块通信。这些封装的优点包含改进制造过程、增加互连形成中的灵活性、提高生产量以及减少的制造损失。
图2是根据本发明实施例的IC封装200的截面图。IC封装200包含基底202、粘合剂203、IC晶片204、天线层206、通道208a和208b(统称为“208”)、第一无线使能功能块210a-d(统称为“210”)、第二无线使能功能模块212a-d(统称为“212”)、焊接凸点214a-c(共同地“214”)以及接触焊盘216a-c(统称为“216”)。
粘合剂203将IC晶片204连接在基底202上。在实施例中，粘合剂203是非导电环氧树脂。
在一实施例中，基底202与参照图1描述的基底120相似。基底202可用于促进IC封装200与印刷电路板(PCB)连接。例如，基底202可包含基底202底面上的接触焊盘，所述接触焊盘可通过一批元件(例如，焊球、插脚或类似物的阵列)将IC封装200与PCB连接。在替代性实施例中，基底202可具有用于与PCB的一组无线使能功能块无线通信的另一组无线使能功能块。无线使能功能块的运行将在后面进行描述。
天线层206与IC晶片204的顶面连接。如以下将进一步描述的，天线层206可包含各种组件，所述组件包含用于与其他器件通信的天线。在实施例中，可从IC晶片204顶面的可蚀刻金属层形成天线层206。在另一实施例中，天线层206可以是与IC晶片204的顶面连接的金属带。替代性地，天线层206还可以是与IC晶片的顶面连接的刚性印刷线路板(PWB)。在另一实施例中，天线层206可包含多个金属层，例如两层或四层金属层。
第一无线使能功能块210与IC晶片204的底面连接，第二无线使能功能块212与基底202的顶面连接。在实施例中，每个第一无线使能功能块210用于与第二无线使能功能块212其中之一通信。例如，可使用频分、时分和/或码分方法、从而每个第二无线使能功能块212仅仅接受来自它各自配对的第一无线使能功能块210的通信，反之亦然。以下将更详细描述第一和第二无线使能功能块210和212的结构。
IC晶片204还通过接触焊盘216和焊接凸点214与基底202连接。在实施例中，第一和第二无线使能功能块210和212可用于代替成对的接触焊盘216和焊接凸点214、从而改进封装200的性能。但是，可能使用接触焊盘216和焊接凸点214通信某些信号。例如，接触焊盘216和焊接凸点214可用于向IC晶片204传送接地和/或电源电压。
通道208与天线层206连接。通道208可以是通过硅晶片(例如，晶片204)形成的完全的硅通道。如图2中所示，通道208b连接无线使能功能块210d与天线层206。在实施例中，通道208b连接第一无线使能功能块210d与天线层206。额外地或替代性地，通道208b可连接第一无线使能功能块210d与包含在天线层206中的其他组件。通道208a连接天线层206与IC晶片204中的电路块。与通道208a连接的电路块可控制天线层206中包含的天线的运行。例如，通道208a可将天线连接至IC晶片204中包含的放大器(例如，功率放大器或低噪声放大器)，所述放大器用于产生将由天线发射的信号和/或放大天线所接收的信号。
图3是根据本发明实施例的IC封装300的截面图。IC封装300与IC封装200基本相似，除了用第二基底302代替天线层206。第二基底302包含绝缘体304和可蚀刻金属层306。绝缘体304可以是本领域技术人员已知的各种绝缘或非导电材料的其中一种，例如FR-4。可以蚀刻可蚀刻金属层306从而形成组件，例如天线层206中包含的那些。例如，可以蚀刻可蚀刻金属层306从而形成天线和/或无源器件。在实施例中，通过使天线在绝缘材料(例如绝缘层304)的顶部形成、代替在IC晶片(例如IC晶片204)的顶部形成(如图2中所示)，增强天线的辐射效率。在另一实施例中，第二基底302可包含多个金属层。例如，第二基底302可包含两个或四个金属层(包含可蚀刻金属层306)。
图4是根据本发明实施例的无线使能功能块400的示意图。无线使能功能块400包含天线402和用于馈给(feed)天线402的通道404a和404b(统称为“404”)。在实施例中，至少一个通道404是穿透硅通道(throughsiliconvia)。能够以与无线使能功能块400基本相似的方式实现第一和第二无线使能功能块210和212的一个或多个。
如图4中所示，天线402是偶极天线。可以使用其他合适的天线配置。在实施例中，天线402可由金属迹线或层形成。例如，可使用IC晶片204的底面或基底202的顶面的迹线形成偶极天线402。天线402可用于在某一频率范围内(例如，通过调节天线302的尺寸)运行。在其他实施例中，天线402可以是其他类型的天线。例如，天线402可以是具有方形或矩形形状的贴片天线。
通道404可采用或接收来自天线的单端信号(single-endedsignal)或差分信号(differentialsignal.)、用于驱动天线。例如，通道404a可与信号层连接、而通道404b可与提供单端信号的电路块或其他元件连接。替代性地，每个通道404可与提供差分信号的分量的电路块或其他元件连接。
如图4中所示，无线使能功能块400选择性地包含收发器406。在该实施例中，由收发器406馈给天线402。收发器406可使用晶片或基底的通道与信号层连接。在一实施例中，收发器406还与电路块或部分PCB(例如，通过基底)连接。收发器406可用于发射接收自电路块或PCB的信号、和/或向电路块或PCB传送接收的信号。在其他实施例中，收发器406可具有额外的功能。例如，收发器306可能能够执行信号处理任务，例如调制和解调。
图5和6是分别根据本发明实施例的天线层500和600的俯视图。天线层500包含偶极天线502、不平衡转换器(Balun)506、线圈(Coil)508、电容器510、电感器512和信号层514。在实施例中，可以从IC晶片或绝缘层的顶面上的信号迹线形成天线层500的一个或多个元件。
偶极天线502包含一对金属条，每个所述金属条由各自的通道504a和504b馈给。在实施例中，通道504a和504b可与参照图2描述的通道208基本相似。如图5中所示，偶极天线502靠近天线层500的边缘。将偶极天线502置于靠近边缘处，因为IC晶片和/或绝缘层将吸收较少的辐射，可以导致增加的辐射效率。
不平衡转换器506、电容器510和电感器512中的一个或多个可在导电层或IC晶片表面的顶面形成为金属迹线。天线层500还包含信号层514。信号层514可用于连接电源、接地或其他信号。在其他实施例中，在天线层500中可实现额外的无源组件。与参照图2描述的通道208相似的通道可用于将IC晶片中的电路块或无线使能功能块连接至不平衡转换器506、线圈508、电容器510、电感器512和信号层514中一个或多个。
图6是天线层600的俯视图，其与天线层500相似。天线层600包含贴片天线602、信号层606和608、不平衡转换器506、电容器510、电感器512和线圈508。可使用通道604馈给贴片天线602。通道604可与IC晶片的电路块连接、或可与无线使能功能块连接。信号层606和608可与相同或不同电位连接。例如，信号层606可与电源层连接、信号层608可与接地层连接。如图5和6中所示，信号层514、606和608是方形或矩形。在其他实施例中，信号层514、606和608可以是其他形状(例如，梯形的、L型等)。
在实施例中，图2中显示的天线层206可具有天线层500、天线层600或其结合的某些或全部特征。另外，尽管已经参照实施例描述图5和6，在所述实施例中它们是天线层的俯视图。在另一实施例中，图5或图6的至少一个可以是可蚀刻金属层的俯视图。例如，图3中显示的可蚀刻金属层306可具有天线层500、天线层600或其结合的特征。
图7是根据本发明实施例的IC封装700的截面图。IC封装700包含许多与IC封装200相同的组件。例如，IC封装700包含基底202、IC晶片204、第一无线使能功能块210、第二无线使能功能块212、焊接凸点214和接触焊盘216。IC封装700额外包含天线702和馈给(feed)708。图8是根据本发明实施例的天线702的俯视图。
天线702包含辐射缝(radiatingslot)704。图8显示天线702的特征的示例性尺寸。在图8的实施例中，辐射缝704可以是大约2mm长。在实施例中，上述辐射缝704可以是在大约60GHz频率的电磁辐射的有效辐射体。在替代性实施例中，辐射缝704可具有不同尺寸并仍然用作在大约60GHz频率的电磁辐射的辐射体。例如，缝704可以是3mm长并仍然用于在大约60GHz频率的电磁辐射。通常地，随着辐射缝704的尺寸偏离共振尺寸，辐射缝704将执行得更差。
辐射缝704由馈给708馈给。如图7中所示，馈给708包含通道712和接触盘710。通道712可与IC晶片204的电路块(例如，低噪声放大器或功率放大器)连接。图8中的虚线框802a和802b显示与馈给708相似的馈给的示例性位置。因此，可以使用位于辐射缝704的相对两侧的馈给来馈给辐射缝704。在实施例中，一对馈给708可用于向辐射缝704传送差分信号、或接收在辐射缝704接收的差分信号。
在实施例中，天线702还具有散热器的功能。例如，天线702可用于从IC晶片204向基底202散布热量。如图7中所示，天线702通过粘合剂706与基底202连接。在实施例中，粘合剂706是导热的、从而天线702可将热量从IC晶片204传导至基底202。
图9是根据本发明实施例的IC封装900的截面图。IC封装900与IC封装700基本相似，除了采用天线902代替天线702。图10是具有示例性尺寸的天线902的俯视图。
与包含通过其部分的缝的天线702不同，在天线902中，缝904完全延伸通过天线902。因此，缝904将天线902划分为第一部分906和第二部分908。在实施例中，第二部分908与馈给708连接。因此，第二部分908可以是相对于第一部分906驱动辐射的缝隙天线。
如图10中所示，天线902可以是大约4mm×4mm。在上述实施例中，第二部分908可以是在大约10-20GHz频率范围的电磁辐射的有效辐射体。图10中的虚线框1002是馈给708的示例性位置的指示。
如图10中所示，天线902还可包含可选择的连接元件1004。在实施例中，可选择的连接元件1004电连接第一部分906与第二部分908。
图11是根据本发明实施例的IC封装1100的截面图。IC封装1100与IC封装700基本相似，除了采用波导管结构1102代替702。图12是波导管结构1102的俯视图。
如图11中所示，IC封装1100包含一对馈给708a和708b。与IC封装700和900中馈给708用于馈给另一辐射结构不同，在IC封装1100的实施例中，馈给708a和708b它们自身是辐射体。波导管1104a和1104b分别用于引导辐射体708a和708b产生的辐射。
可选择性地采用非导电材料1106a和1108a填充波导管1104a。相似地，可选择性地采用非导电材料1106b和1108b填充波导管1104b。非导电材料1106a、1106b、1108a和1108b可用于增强波导管1104a和1104b的引导性能。例如，非导电材料1106a和1106b可以是相对地高非导电材料(例如，分别与非导电材料1108a和1108b比较)。在上述实施例中，波导管1104a和1104b可分别充当馈给708a和708b产生的辐射的光纤波导管。
如图12中所示，波导管结构1102可具有额外的波导管1204a和1204b。波导管1104a、1104b、1204a和1204b可以是圆形。例如，波导管1104a、1104b、1204a和1204b可具有1mm的直径。在上述实施例中，波导管1104a、1104b、1204a和1204b可以是具有大约200GHz频率的电磁辐射的有效波导管。
可分别采用非导电材料1206a和1208a以及非导电材料1206b和1208b填充波导管1204a和1204b。在实施例中，非导电材料1206a、1206b、1208a和1208b可分别与非导电材料1106a、1106b、1108a和1108b基本相似。
图13是根据本发明实施例的提供组装IC器件的示例性步骤的流程图1300。基于以下说明，其他结构和操作实施例对相关领域技术人员而言将是显而易见的。图13中显示的步骤未必以显示的顺序发生。以下详细描述图1300的步骤。
在步骤1302，提供IC晶片。例如，提供图2中所示的IC晶片204。
在步骤1304，在IC晶片上提供天线。例如，在IC晶片204上分别提供在图2和3中所示的天线层206和可蚀刻金属层306。在另一实例中，还提供在图7和9中所示的具有散热器功能的天线702和902。在另一实施例中，在图11中，馈给708a和708b用作产生辐射的辐射体，使用波导管结构1102引导所述辐射。在图7、9和11的实施例中，天线或波导管连接于基底。
在实施例中，在组装过程之前，可以形成天线，然后在组装过程中将天线与IC晶片(以及在一些实施例中与基底)连接。例如，在组装过程之前，可以形成图7、9和11中的天线或波导管结构，然后在组装过程中将天线或波导管结构与IC晶片和基底连接。
在步骤1306，在IC晶片上形成第一无线使能功能块。例如，在图2中在IC晶片204上可形成第一无线使能功能块210。
在步骤1308，将IC晶片与基底连接。例如，在图2中，IC晶片204通过粘合剂203与基底202连接。
结论
虽然以上描述了本发明的各种实施例，应当理解，其目的仅在于举例说明，而没有限制性。本领域的技术人员知悉，在不离开本发明的精神和范围情况下，在形式上和细节上还可做各种的改变。因此，本发明的保护范围不当仅局限于以上描述的任一实施例，而应该依照权利要求及其等同来限定。
相关申请的交叉引用
本申请要求申请日为2010年10月7日、申请号No.61/390,810的美国临时专利申请的优先权，该专利申请在这里全文引用，以供参考。

Claims (9)

1.一种集成电路IC器件，其特征在于，包括：
基底，具有第一外表面和第二外表面；
IC晶片，具有相对的第一外表面和第二外表面，其中所述IC晶片的第一外表面连接至所述基底的第一外表面；
第一天线，连接至所述IC晶片的第二外表面，其中所述第一天线用于与连接于另一器件的另一天线通信；以及
多个第一无线使能功能块，形成在所述IC晶片的第一外表面上，
其中所述多个第一无线使能功能块中的每一个用于与形成于所述基底的第一外表面上的多个第二无线使能功能块的相应一个进行无线通信，
其中所述多个第一无线使能功能块和所述多个第二无线使能功能块中的每个无线使能功能块包括各自的收发器和各自的天线；以及
波导管结构，直接附接至所述IC晶片的所述第二外表面，所述波导管结构包括被配置为引导由所述第一天线产生的电磁辐射的波导管。
2.根据权利要求1所述的IC器件，其特征在于，所述第一天线包括偶极天线和贴片天线中的至少一个。
3.根据权利要求1所述的IC器件，其特征在于，所述IC器件还包括包含所述第一天线的天线层。
4.根据权利要求3所述的IC器件，其特征在于，所述天线层包括电容器、电感器、线圈和不平衡转换器中的至少一个。
5.根据权利要求3所述的IC器件，其特征在于，所述天线层包括与所述IC晶片连接的金属带。
6.根据权利要求3所述的IC器件，其特征在于，所述天线层包括与基底连接的可蚀刻金属层。
7.根据权利要求1所述的IC器件，其特征在于，所述第一天线从所述IC晶片向所述基底散布热量。
8.根据权利要求1所述的IC器件，其特征在于，所述第一天线与所述基底连接。
9.一种制造集成电路IC器件的方法，其特征在于，所述方法包括：
提供具有相对的第一外表面和第二外表面的IC晶片；
在所述IC晶片的第一外表面上形成第一天线，其中所述第一天线用于与连接于另一器件的另一天线通信；
在所述IC晶片的第二外表面上形成多个第一无线使能功能块；以及
连接所述IC晶片的第二外表面与基底的与所述IC晶片的第二外表面相对的表面，其中所述多个第一无线使能功能块中的每一个用于与形成于所述基底的该表面上的多个第二无线使能功能块中的相应一个进行无线通信，
其中所述多个第一无线使能功能块和所述多个第二无线使能功能块中的每个无线使能功能块包括各自的收发器和各自的天线；以及
在所述IC晶片的所述第二外表面直接附接波导管结构，所述波导管结构包括被配置为引导由所述第一天线产生的电磁辐射的波导管。
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Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8901945B2 (en) 2011-02-23 2014-12-02 Broadcom Corporation Test board for use with devices having wirelessly enabled functional blocks and method of using same
US8928139B2 (en) 2011-09-30 2015-01-06 Broadcom Corporation Device having wirelessly enabled functional blocks
US8824984B2 (en) * 2012-06-29 2014-09-02 Intel Corporation Outphasing power combining by antenna
US9129954B2 (en) * 2013-03-07 2015-09-08 Advanced Semiconductor Engineering, Inc. Semiconductor package including antenna layer and manufacturing method thereof
EP2860757B1 (en) * 2013-09-11 2019-12-11 Nxp B.V. Integrated circuit
KR101905507B1 (ko) 2013-09-23 2018-10-10 삼성전자주식회사 안테나 장치 및 그를 구비하는 전자 기기
US10103447B2 (en) 2014-06-13 2018-10-16 Nxp Usa, Inc. Integrated circuit package with radio frequency coupling structure
US9917372B2 (en) * 2014-06-13 2018-03-13 Nxp Usa, Inc. Integrated circuit package with radio frequency coupling arrangement
US9620841B2 (en) 2014-06-13 2017-04-11 Nxp Usa, Inc. Radio frequency coupling structure
US9887449B2 (en) 2014-08-29 2018-02-06 Nxp Usa, Inc. Radio frequency coupling structure and a method of manufacturing thereof
US10225925B2 (en) 2014-08-29 2019-03-05 Nxp Usa, Inc. Radio frequency coupling and transition structure
US9444135B2 (en) 2014-09-19 2016-09-13 Freescale Semiconductor, Inc. Integrated circuit package
US20180212306A1 (en) * 2015-09-25 2018-07-26 Intel Corporation Antennas for platform level wireless interconnects
US10063211B2 (en) 2016-02-03 2018-08-28 Qualcomm Incorporated Compact bypass and decoupling structure for millimeter-wave circuits
US20170373011A1 (en) * 2016-06-28 2017-12-28 General Electric Company Semiconductor die backside devices and methods of fabrication thereof
US11190196B2 (en) 2019-10-18 2021-11-30 Massachusetts Institute Of Technology Systems and methods for suppressing even harmonics in a molecular clock
US11515646B2 (en) 2019-10-24 2022-11-29 Massachusetts Institute Of Technology Integrated circuit-to-waveguide slot array coupler
US11095014B2 (en) * 2020-01-07 2021-08-17 Aptiv Technologies Limited Waveguide antenna with integrated temperature management
US20220407215A1 (en) * 2021-06-17 2022-12-22 Advanced Semiconductor Engineering, Inc. Semiconductor device package and method of manufacturing the same
EP4293817A1 (en) * 2022-06-13 2023-12-20 Nxp B.V. Rf package and method of manufacture of an rf package

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6728113B1 (en) * 1993-06-24 2004-04-27 Polychip, Inc. Method and apparatus for non-conductively interconnecting integrated circuits
FR2727227B1 (fr) * 1994-11-17 1996-12-20 Schlumberger Ind Sa Dispositif de securite actif a memoire electronique
JP3378435B2 (ja) * 1995-09-29 2003-02-17 株式会社東芝 超高周波帯無線通信装置
FR2769110B1 (fr) * 1997-09-26 1999-12-03 Gemplus Card Int Procede de fabrication d'un module ou etiquette electronique, module ou etiquette obtenue et support comportant un tel module ou etiquette
EP0978729A3 (en) * 1998-08-07 2002-03-20 Hitachi, Ltd. High-frequency transmitter-receiving apparatus for such an application as vehicle-onboard radar system
US6542720B1 (en) * 1999-03-01 2003-04-01 Micron Technology, Inc. Microelectronic devices, methods of operating microelectronic devices, and methods of providing microelectronic devices
JP3675688B2 (ja) * 2000-01-27 2005-07-27 寛治 大塚 配線基板及びその製造方法
JP4848108B2 (ja) * 2001-09-14 2011-12-28 インターナショナル・ビジネス・マシーンズ・コーポレーション データ処理システム
US7095620B2 (en) * 2002-11-27 2006-08-22 International Business Machines Corp. Optically connectable circuit board with optical component(s) mounted thereon
US20050075080A1 (en) * 2003-10-03 2005-04-07 Nanyang Technological University Inter-chip and intra-chip wireless communications systems
EP1761799A2 (en) * 2004-04-12 2007-03-14 Ghz Tr Corporation Method and apparatus for automotive radar sensor
US7525199B1 (en) * 2004-05-21 2009-04-28 Sun Microsystems, Inc Packaging for proximity communication positioned integrated circuits
DE102004059333A1 (de) * 2004-12-09 2006-06-14 Robert Bosch Gmbh Antennenanordnung für einen Radar-Transceiver
DE102004063541A1 (de) * 2004-12-30 2006-07-13 Robert Bosch Gmbh Antennenanordnung für einen Radar-Transceiver
US20060285480A1 (en) * 2005-06-21 2006-12-21 Janofsky Eric B Wireless local area network communications module and integrated chip package
US20070065984A1 (en) * 2005-09-22 2007-03-22 Lau Daniel K Thermal enhanced package for block mold assembly
CA2642884A1 (en) * 2006-03-07 2007-09-13 Scanimetrics Inc. Method and apparatus for interrogating an electronic component
JP4912716B2 (ja) * 2006-03-29 2012-04-11 新光電気工業株式会社 配線基板の製造方法、及び半導体装置の製造方法
US8102665B2 (en) * 2006-06-21 2012-01-24 Broadcom Corporation Integrated circuit with intra-chip clock interface and methods for use therewith
US8478344B2 (en) * 2006-06-21 2013-07-02 Broadcom Corporation Power recovery circuit based on partial standing waves
US8674888B2 (en) * 2006-06-21 2014-03-18 Broadcom Corporation Integrated circuit with power supply line antenna structure and methods for use therewith
US7557758B2 (en) * 2007-03-26 2009-07-07 Broadcom Corporation Very high frequency dielectric substrate wave guide
US7974587B2 (en) * 2006-12-30 2011-07-05 Broadcom Corporation Local wireless communications within a device
US8116294B2 (en) * 2007-01-31 2012-02-14 Broadcom Corporation RF bus controller
US7899407B2 (en) * 2007-05-01 2011-03-01 Broadcom Corporation High frequency signal combining
CN101308950A (zh) * 2007-05-18 2008-11-19 英资莱尔德无线通信技术（北京）有限公司 天线装置
US20090006675A1 (en) * 2007-06-28 2009-01-01 Broadcom Corporation Universal Serial Bus Dongle Device with Millimeter Wave Transceiver and System for use Therewith
US7911388B2 (en) * 2007-12-12 2011-03-22 Broadcom Corporation Method and system for configurable antenna in an integrated circuit package
US8415777B2 (en) * 2008-02-29 2013-04-09 Broadcom Corporation Integrated circuit with millimeter wave and inductive coupling and methods for use therewith
US20090227205A1 (en) * 2008-03-04 2009-09-10 Broadcom Corporation Inductively coupled integrated circuit with multiple access protocol and methods for use therewith
TWI370530B (en) * 2008-05-21 2012-08-11 Advanced Semiconductor Eng Semiconductor package having an antenna
US8384596B2 (en) * 2008-06-19 2013-02-26 Broadcom Corporation Method and system for inter-chip communication via integrated circuit package antennas
US8274147B2 (en) * 2008-06-19 2012-09-25 Broadcom Corporation Method and system for intra-printed circuit board communication via waveguides
US8232920B2 (en) * 2008-08-07 2012-07-31 International Business Machines Corporation Integrated millimeter wave antenna and transceiver on a substrate
US7943404B2 (en) * 2008-08-07 2011-05-17 International Business Machines Corporation Integrated millimeter wave antenna and transceiver on a substrate
US8407890B2 (en) * 2010-01-25 2013-04-02 Freescale Semiconductor Inc. Method of manufacting an electronic device module with integrated antenna structure

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