CN102421944B - 连铸用的结晶器 - Google Patents

连铸用的结晶器 Download PDF

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CN102421944B
CN102421944B CN201080018864.6A CN201080018864A CN102421944B CN 102421944 B CN102421944 B CN 102421944B CN 201080018864 A CN201080018864 A CN 201080018864A CN 102421944 B CN102421944 B CN 102421944B
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copper
crystallizer
continuous casting
plate
copper crucible
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CN102421944A (zh
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E·埃弗兹
R·埃弗兹
S·埃弗兹
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Egon Evertz KG GmbH and Co
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D15/00—Electrolytic or electrophoretic production of coatings containing embedded materials, e.g. particles, whiskers, wires
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D11/00—Continuous casting of metals, i.e. casting in indefinite lengths
    • B22D11/04—Continuous casting of metals, i.e. casting in indefinite lengths into open-ended moulds
    • B22D11/059—Mould materials or platings
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D15/00—Electrolytic or electrophoretic production of coatings containing embedded materials, e.g. particles, whiskers, wires
    • C25D15/02—Combined electrolytic and electrophoretic processes with charged materials
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10—Electroplating with more than one layer of the same or of different metals
    • C25D5/12—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48—After-treatment of electroplated surfaces
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
    • C25D5/611—Smooth layers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/67—Electroplating to repair workpiece
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Continuous Casting (AREA)
  • Electroplating Methods And Accessories (AREA)

Abstract

本发明涉及金属或金属合金连铸用的铜结晶器或者结晶器板以及磨损的结晶器或结晶器板的加工方法。按照本发明，在结晶器内壁或在面向连续铸锭的结晶器板侧使用通过电解敷设的铜镀层。

Description

连铸用的结晶器
本发明涉及一种用于金属或金属合金的连铸用的铜结晶器或铜结晶器板，其包含在结晶器内壁上的或在面向连续铸锭的结晶器板侧上的镀层。
上述类型的结晶器由各个板组成，这些板共同构成结晶器。为了进行冷却，在结晶器板中设置冷却通道，所述冷却通道被冷却液(大多是水)穿流。
在DE 30 38 289A1中已经描述，对结晶器内壁往往进行电镀处理，以便获得这样的结晶器内壁，其耐受得住在连铸的开始时运动到结晶器中的启动坯料以及以后耐受得住液体的或变为固体的钢。首先建议硬镀铬表面处理，然而这种结晶器寿命比较短，因此建议金属层由镍再加上在一种或者多种镍盐溶液中悬浮的硬质材料颗粒沉积在结晶器内壁上来制成。作为硬质材料颗粒特别应该使用碳化硅(SiC)。当初可以令人意想不到地确认，用SiC颗粒掺杂的镍层导致耐磨强度降低。令人意想不到的是，特别是铸钢时在结晶器中移动的液态金属既不在化学上侵蚀SiC颗粒，也不在钢硬化时出现颗粒的机械脱落。
结晶器内壁这样的用SiC颗粒掺杂的镍镀层以前在铜结晶器的情况下也得到成功应用，该结晶器由于使用在内侧上被强烈磨耗，以致对于连铸不再适用。内壁镀层使结晶器可以重新具有保证最优的连铸所要求的内部尺寸。
本发明的任务在于，提出一种在可价廉物美地制造的而且具有同等质量的耐磨性的结晶器或结晶器板。本发明的任务还在于，提供一种铜结晶器或铜结晶器板的加工方法。
为了解决这个任务，建议按照权利要求1的结晶器，其中，镀层由电解敷设的铜组成。
这样一种结晶器的优点在于，一方面铜是一种比镍便宜的原料。另一方面，通过给结晶器、特别是铜结晶器加设铜镀层，可以达到更好的粘附结合。令人意想不到的是，这样一种结晶器的耐磨性优于在镍镀层的情况下。该镀层的厚度按照结晶器内部尺寸的期望的最终尺寸确定，并处于1mm和25mm之间，优选处于3mm至15mm之间。敷设的铜层最好相对于基体具有较大的硬度。
在本发明的另一个构造中，铜与碳化硅颗粒通过电解方法析出在结晶器壁上。从开头所述的文献中在原理上已知从电解溶液通过电解析出金属层。首先优选形成由硬质材料颗粒和润湿剂组成的悬浮液，并将这样获得的糊状物质注入电解溶液中并分布于其中。润湿剂基本上用来防止硬质材料颗粒在电解液中聚集。总而言之，具有嵌入的SiC颗粒的铜层导致结晶器壁内侧的耐磨性的改善，在保持小的SiC颗粒的情况下内侧仍能制造得足够光滑。SiC颗粒具有优选为0.3μm至1μm的粒度并且在该镀层中具有至少5％至最多15％的体积百分比。
为了维修磨损的结晶器或者结晶器板，提出权利要求7描述的方法，其中以机械方式铲平(abtragen)由于连铸而被磨损的内面，直至达到磨损刮痕的最大深度为止；接着，再次通过电解敷设铜层，直至达到希望的最终尺寸为止。这个方法也能够在这样的结晶器或结晶器板的情况下使用，所述结晶器或结晶器板通过铸造制造且最后被电解敷设铜直至达到要求的最终尺寸，其中必要时掺入上述粒度和数量的SiC颗粒。与通过铸造并紧跟着锻造制造的结晶器或结晶器板不同，在表面上得到细颗粒的、较硬的均质结构，这导致较长的寿命。
若从连铸工艺看合理或需要的是，可以使结晶器内侧或结晶器板内侧仍旧带有镍镀层，它敷设在较晚的铸造镜面高度之下。
按照本发明的另一个设计方案，所敷设的层通过强化滚压进行后续处理，优选用液压的强化滚压工具进行。只要结晶器或结晶器板的表面仍旧具有大于100μm的粗糙深度，就适宜于首先通过切削平整把表面打磨光滑，直至粗糙度尺寸达到大致50μm至70μm为止。用强化滚压工具以1.5×107Pa至6×107Pa的压力压到工件上以进行最后的处理，其中强化滚压工具的流体静力支承的球体通过蜿蜒形引导通过结晶器或结晶器板表面，最后导致边缘层强化，此时提高边缘层内的固有压应力(Druckeigenspannung)。
总而言之，令人意想不到的是，不仅对于新的至今尚未用过的结晶器板，而且对于已经通过连铸被磨损的结晶器或结晶器板，电解敷设的铜层不仅在其与基础材料结合方面，而且在其结构、均匀性、无缺陷性以及硬度方面均能导致最优的结果。这不仅对于纯铜镀层，而且对于附带地带有SiC颗粒的铜镀层都是如此。
在一个具体的实施例中，对尺寸25mm×30mm×105mm的铜制矩形样品进行单面电解镀铜。敷设的铜层厚度约为10mm。基础材料到该层的过渡区没有缺陷位置或结合缺陷。这种铜镀层的特征在于结构非常精细，此时各个铜颗粒在光学显微镜下已不再能够分辨，而通过浇铸和锻造制造的铜-基本材料具有变形的颗粒并且呈现轻微的颗粒分离。本体的硬度测量具有74至78HV0.01的硬度范围，而电镀敷设的铜层硬度为80HV0.01。
在另一个实施例中，同一几何形状的矩形样品被敷设一个10mm厚度的铜层，其具有体积百分比为10％的SiC颗粒，其平均粒度为0.5μm。

Claims (6)

1.金属或者金属合金连铸用的铜结晶器或者铜结晶器板，其包含在结晶器内壁上的或在面向连续铸锭的结晶器板侧上的镀层，其特征在于在由于连铸被磨损的且业已通过机械方式被铲平直至磨损刮痕的最大深度的内面上通过电解敷设的铜层，该铜层具有3mm至15mm的厚度。 
2.按照权利要求1的铜结晶器或者铜结晶器板，其特征在于，该铜层与基体相比具有较大的硬度。 
3.连铸用的铜结晶器或铜结晶器板的加工方法，其中，通过机械方式铲平由于连铸被磨损的内面，直至磨损刮痕的最大深度，并且接着对其重新进行镀层，其特征在于，使用铜作为镀层材料，该铜通过电解敷设。 
4.按照权利要求3的方法，其特征在于，铜结晶器或者铜结晶器板的多个部分设有附加的镍外层。 
5.按照权利要求3或4的方法，其特征在于，通过强化滚压对已敷设的层进行后续处理。 
6.按照权利要求3或4的方法，其特征在于，铜的敷设厚度为1mm至25mm。 
CN201080018864.6A 2009-09-29 2010-04-20 连铸用的结晶器 Expired - Fee Related CN102421944B (zh)

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DE202009013126U DE202009013126U1 (de) 2009-09-29 2009-09-29 Kokille zum Stranggießen
PCT/DE2010/000441 WO2011038704A2 (de) 2009-09-29 2010-04-20 Kokille zum stranggiessen

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US8932518B2 (en) 2012-02-29 2015-01-13 General Electric Company Mold and facecoat compositions
CN102776550B (zh) * 2012-08-01 2014-11-05 西峡龙成特种材料有限公司 结晶器铜板上下镀层一次电镀成型电解槽
US9192983B2 (en) 2013-11-26 2015-11-24 General Electric Company Silicon carbide-containing mold and facecoat compositions and methods for casting titanium and titanium aluminide alloys
US9511417B2 (en) 2013-11-26 2016-12-06 General Electric Company Silicon carbide-containing mold and facecoat compositions and methods for casting titanium and titanium aluminide alloys
DE102018129966A1 (de) * 2018-11-27 2020-05-28 apt Extrusions GmbH & Co. KG Verfahren zur Herstellung eines in einem Strangpressprozess umformbaren Erzeugnisses durch Stranggießen
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WO2011038704A2 (de) 2011-04-07
WO2011038704A3 (de) 2011-08-18
PL2393965T3 (pl) 2017-05-31
EP2393965B1 (de) 2016-06-08
US20120067541A1 (en) 2012-03-22
HK1164382A1 (zh) 2012-09-21
US8813825B2 (en) 2014-08-26
DE202009013126U1 (de) 2009-12-10
CN102421944A (zh) 2012-04-18
ZA201107472B (en) 2012-09-26
EP2393965A2 (de) 2011-12-14
BRPI1015535A2 (pt) 2016-04-26

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