CN102421931B - 有机el元件的反射电极膜形成用银合金靶和其制造方法 - Google Patents

有机el元件的反射电极膜形成用银合金靶和其制造方法 Download PDF

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Publication number
CN102421931B
CN102421931B CN2010800200309A CN201080020030A CN102421931B CN 102421931 B CN102421931 B CN 102421931B CN 2010800200309 A CN2010800200309 A CN 2010800200309A CN 201080020030 A CN201080020030 A CN 201080020030A CN 102421931 B CN102421931 B CN 102421931B
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target
organic
electrode film
silver alloy
reflective electrode
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CN102421931A (zh
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小见山昌三
伊藤郁夫
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Mitsubishi Materials Corp
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Mitsubishi Materials Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/21—Circular sheet or circular blank

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
CN2010800200309A 2009-10-06 2010-10-05 有机el元件的反射电极膜形成用银合金靶和其制造方法 Active CN102421931B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2009-232634 2009-10-06
JP2009232634 2009-10-06
JP2010210149A JP4793502B2 (ja) 2009-10-06 2010-09-17 有機ｅｌ素子の反射電極膜形成用銀合金ターゲットおよびその製造方法
JP2010-210149 2010-09-17
PCT/JP2010/067817 WO2011043486A1 (ja) 2009-10-06 2010-10-05 有機ｅｌ素子の反射電極膜形成用銀合金ターゲットおよびその製造方法

Publications (2)

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CN102421931A CN102421931A (zh) 2012-04-18
CN102421931B true CN102421931B (zh) 2013-10-30

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ID=43856934

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CN2010800200309A Active CN102421931B (zh) 2009-10-06 2010-10-05 有机el元件的反射电极膜形成用银合金靶和其制造方法

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Country Link
US (1) US8821769B2 (https=)
EP (1) EP2487274B1 (https=)
JP (1) JP4793502B2 (https=)
KR (1) KR101099415B1 (https=)
CN (1) CN102421931B (https=)
TW (1) TWI385263B (https=)
WO (1) WO2011043486A1 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5533545B2 (ja) * 2010-01-12 2014-06-25 三菱マテリアル株式会社 有機ｅｌ素子の反射電極膜形成用銀合金ターゲットおよびその製造方法
JP5806653B2 (ja) * 2011-12-27 2015-11-10 株式会社神戸製鋼所 反射電極用Ａｇ合金膜、反射電極、およびＡｇ合金スパッタリングターゲット
JP5159962B1 (ja) 2012-01-10 2013-03-13 三菱マテリアル株式会社 導電性膜形成用銀合金スパッタリングターゲットおよびその製造方法
JP5472353B2 (ja) * 2012-03-27 2014-04-16 三菱マテリアル株式会社 銀系円筒ターゲット及びその製造方法
DE102012006718B3 (de) * 2012-04-04 2013-07-18 Heraeus Materials Technology Gmbh & Co. Kg Planares oder rohrförmiges Sputtertarget sowie Verfahren zur Herstellung desselben
JP5928218B2 (ja) * 2012-07-20 2016-06-01 三菱マテリアル株式会社 Ａｇ合金膜及びその製造方法
JP2014196562A (ja) * 2012-12-21 2014-10-16 三菱マテリアル株式会社 Ａｇ合金スパッタリングターゲット
JP5522599B1 (ja) * 2012-12-21 2014-06-18 三菱マテリアル株式会社 Ａｇ合金スパッタリングターゲット
JP5612147B2 (ja) * 2013-03-11 2014-10-22 三菱マテリアル株式会社 導電性膜形成用銀合金スパッタリングターゲットおよびその製造方法
JP6198177B2 (ja) * 2013-07-19 2017-09-20 三菱マテリアル株式会社 Ａｇ合金スパッタリングターゲット
CN105316630B (zh) * 2014-06-04 2020-06-19 光洋应用材料科技股份有限公司 银合金靶材、其制造方法及应用该靶材的有机发光二极管
DE102014214683A1 (de) 2014-07-25 2016-01-28 Heraeus Deutschland GmbH & Co. KG Sputtertarget auf der Basis einer Silberlegierung
EP3168325B1 (de) 2015-11-10 2022-01-05 Materion Advanced Materials Germany GmbH Sputtertarget auf der basis einer silberlegierung
CN106893989B (zh) * 2016-12-29 2019-10-01 昆山全亚冠环保科技有限公司 一种银钛合金靶材防开裂轧制工艺
WO2019163745A1 (ja) * 2018-02-20 2019-08-29 三菱マテリアル株式会社 Ａｇ合金スパッタリングターゲット、及び、Ａｇ合金スパッタリングターゲットの製造方法
JP2019143242A (ja) 2018-02-20 2019-08-29 三菱マテリアル株式会社 Ａｇ合金スパッタリングターゲット、及び、Ａｇ合金スパッタリングターゲットの製造方法
CN117070905A (zh) * 2023-09-19 2023-11-17 芜湖映日科技股份有限公司 一种超大尺寸银合金靶材及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5456815A (en) * 1993-04-08 1995-10-10 Japan Energy Corporation Sputtering targets of high-purity aluminum or alloy thereof
WO2003100112A1 (fr) * 2002-05-28 2003-12-04 Ishifuku Metal Industry Co., Ltd. Matériau pour cible de pulvérisation
CN1823179A (zh) * 2003-07-16 2006-08-23 株式会社神户制钢所 Ag系溅射靶及其制造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002077317A1 (en) 2001-03-16 2002-10-03 Ishifuku Metal Industry Co., Ltd. Sputtering target material
CN1238554C (zh) * 2002-06-24 2006-01-25 株式会社钢臂功科研 银合金溅射靶及其制造方法
JP4264302B2 (ja) * 2002-06-24 2009-05-13 株式会社コベルコ科研 銀合金スパッタリングターゲットとその製造方法
JP4351144B2 (ja) * 2004-12-08 2009-10-28 田中貴金属工業株式会社 銀合金

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5456815A (en) * 1993-04-08 1995-10-10 Japan Energy Corporation Sputtering targets of high-purity aluminum or alloy thereof
WO2003100112A1 (fr) * 2002-05-28 2003-12-04 Ishifuku Metal Industry Co., Ltd. Matériau pour cible de pulvérisation
CN1823179A (zh) * 2003-07-16 2006-08-23 株式会社神户制钢所 Ag系溅射靶及其制造方法

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Publication number Publication date
KR20110113214A (ko) 2011-10-14
EP2487274A1 (en) 2012-08-15
US8821769B2 (en) 2014-09-02
EP2487274B1 (en) 2018-09-26
JP2011100719A (ja) 2011-05-19
JP4793502B2 (ja) 2011-10-12
WO2011043486A1 (ja) 2011-04-14
TWI385263B (zh) 2013-02-11
TW201131001A (en) 2011-09-16
EP2487274A4 (en) 2017-05-24
CN102421931A (zh) 2012-04-18
KR101099415B1 (ko) 2011-12-27
US20120193589A1 (en) 2012-08-02

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