CN102403439A - 具有再发光半导体构造和会聚光学元件的led装置 - Google Patents

具有再发光半导体构造和会聚光学元件的led装置 Download PDF

Info

Publication number
CN102403439A
CN102403439A CN2011104015055A CN201110401505A CN102403439A CN 102403439 A CN102403439 A CN 102403439A CN 2011104015055 A CN2011104015055 A CN 2011104015055A CN 201110401505 A CN201110401505 A CN 201110401505A CN 102403439 A CN102403439 A CN 102403439A
Authority
CN
China
Prior art keywords
optical element
led
base
light
emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011104015055A
Other languages
English (en)
Chinese (zh)
Inventor
迈克尔·A·哈斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Innovative Properties Co
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of CN102403439A publication Critical patent/CN102403439A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0004Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed
    • G02B19/0028Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed refractive and reflective surfaces, e.g. non-imaging catadioptric systems
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0047Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
    • G02B19/0061Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a LED
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0047Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
    • G02B19/0071Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source adapted to illuminate a complete hemisphere or a plane extending 360 degrees around the source
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0095Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with ultraviolet radiation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/813Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H10H20/8511Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512Wavelength conversion materials

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
CN2011104015055A 2006-06-12 2007-06-11 具有再发光半导体构造和会聚光学元件的led装置 Pending CN102403439A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US80454406P 2006-06-12 2006-06-12
US60/804,544 2006-06-12

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN2007800221229A Division CN101467275B (zh) 2006-06-12 2007-06-11 具有再发光半导体构造和会聚光学元件的led装置

Publications (1)

Publication Number Publication Date
CN102403439A true CN102403439A (zh) 2012-04-04

Family

ID=38832112

Family Applications (3)

Application Number Title Priority Date Filing Date
CN2011104015055A Pending CN102403439A (zh) 2006-06-12 2007-06-11 具有再发光半导体构造和会聚光学元件的led装置
CN2007800219214A Expired - Fee Related CN101467271B (zh) 2006-06-12 2007-06-11 具有再发光半导体构造和会聚光学元件的led装置
CN2007800221229A Expired - Fee Related CN101467275B (zh) 2006-06-12 2007-06-11 具有再发光半导体构造和会聚光学元件的led装置

Family Applications After (2)

Application Number Title Priority Date Filing Date
CN2007800219214A Expired - Fee Related CN101467271B (zh) 2006-06-12 2007-06-11 具有再发光半导体构造和会聚光学元件的led装置
CN2007800221229A Expired - Fee Related CN101467275B (zh) 2006-06-12 2007-06-11 具有再发光半导体构造和会聚光学元件的led装置

Country Status (7)

Country Link
US (2) US7541610B2 (enExample)
EP (2) EP2036135A4 (enExample)
JP (2) JP2009540616A (enExample)
KR (2) KR20090018623A (enExample)
CN (3) CN102403439A (enExample)
TW (2) TW200817804A (enExample)
WO (2) WO2007146868A1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007056354A2 (en) * 2005-11-04 2007-05-18 The Regents Of The University Of California High light extraction efficiency light emitting diode (led)
US7952110B2 (en) * 2006-06-12 2011-05-31 3M Innovative Properties Company LED device with re-emitting semiconductor construction and converging optical element
US20070284565A1 (en) * 2006-06-12 2007-12-13 3M Innovative Properties Company Led device with re-emitting semiconductor construction and optical element
US7902542B2 (en) * 2006-06-14 2011-03-08 3M Innovative Properties Company Adapted LED device with re-emitting semiconductor construction
WO2008073400A1 (en) 2006-12-11 2008-06-19 The Regents Of The University Of California Transparent light emitting diodes
CN101452982A (zh) * 2007-11-29 2009-06-10 富士迈半导体精密工业(上海)有限公司 固态发光器件
CN102150289B (zh) 2008-07-16 2014-11-12 3M创新有限公司 稳定光源
TW201044568A (en) 2009-04-20 2010-12-16 3M Innovative Properties Co Non-radiatively pumped wavelength converter
EP2433314A1 (en) * 2009-04-20 2012-03-28 3M Innovative Properties Company Non-radiatively pumped wavelength converter
US8702774B2 (en) 2009-04-30 2014-04-22 Zeltiq Aesthetics, Inc. Device, system and method of removing heat from subcutaneous lipid-rich cells
CN101794839B (zh) * 2010-02-09 2011-08-10 中国科学院上海技术物理研究所 一种优化锑化铟光伏型探测器件吸收层厚度的方法
KR20130128420A (ko) 2010-11-18 2013-11-26 쓰리엠 이노베이티브 프로퍼티즈 컴파니 폴리실라잔 결합층을 포함하는 발광 다이오드 성분
JP5216113B2 (ja) * 2011-02-24 2013-06-19 フェニックス電機株式会社 発光装置
KR20130035658A (ko) 2011-09-30 2013-04-09 서울옵토디바이스주식회사 발광 다이오드 소자용 기판 제조 방법
KR101306245B1 (ko) * 2012-01-17 2013-09-09 한국과학기술연구원 시간 분할 방식의 무안경식 3차원 영상표시장치
DE102015105693B4 (de) * 2015-04-14 2021-05-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Erzeugung von Strahlung unter Verwendung eines strahlungsemittierenden Halbleiterbauelements
JP6294435B1 (ja) * 2016-11-07 2018-03-14 日機装株式会社 流体殺菌装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1445869A (zh) * 2002-03-14 2003-10-01 株式会社东芝 半导体发光芯片及半导体发光器件
US20040075102A1 (en) * 2002-10-21 2004-04-22 Nai-Chuan Chen AlGaInP light emitting diode
CN1573365A (zh) * 2003-06-09 2005-02-02 株式会社丰田自动织机 光学器件、面状照明装置和显示器
US20050051790A1 (en) * 2003-06-05 2005-03-10 Matsushita Electric Industrial Co., Ltd. Phosphor, semiconductor light emitting device, and fabrication method thereof
CN1596374A (zh) * 2001-11-28 2005-03-16 法国圣戈班玻璃厂 强透射光的结构化透明板
CN1697208A (zh) * 2005-01-14 2005-11-16 友达光电股份有限公司 白光光源的产生方法,白光发光元件及其制造方法
US20060091784A1 (en) * 2004-10-29 2006-05-04 Conner Arlie R LED package with non-bonded optical element

Family Cites Families (83)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5087949A (en) * 1989-06-27 1992-02-11 Hewlett-Packard Company Light-emitting diode with diagonal faces
US5625636A (en) * 1991-10-11 1997-04-29 Bryan; Robert P. Integration of photoactive and electroactive components with vertical cavity surface emitting lasers
US5252839A (en) 1992-06-10 1993-10-12 Hewlett-Packard Company Superluminescent light-emitting diode with reverse biased absorber
US5814839A (en) * 1995-02-16 1998-09-29 Sharp Kabushiki Kaisha Semiconductor light-emitting device having a current adjusting layer and a uneven shape light emitting region, and method for producing same
JPH08288549A (ja) * 1995-04-11 1996-11-01 Omron Corp 多波長発光半導体素子
US6054719A (en) * 1995-04-20 2000-04-25 Damilerchrysler Ag Composite structure of an electronic component
US5915193A (en) * 1995-05-18 1999-06-22 Tong; Qin-Yi Method for the cleaning and direct bonding of solids
US5684309A (en) * 1996-07-11 1997-11-04 North Carolina State University Stacked quantum well aluminum indium gallium nitride light emitting diodes
JPH1033196A (ja) * 1996-07-23 1998-02-10 Unitika Ltd 試験片
TW383508B (en) * 1996-07-29 2000-03-01 Nichia Kagaku Kogyo Kk Light emitting device and display
US5955749A (en) * 1996-12-02 1999-09-21 Massachusetts Institute Of Technology Light emitting device utilizing a periodic dielectric structure
US6473554B1 (en) * 1996-12-12 2002-10-29 Teledyne Lighting And Display Products, Inc. Lighting apparatus having low profile
JP3014339B2 (ja) * 1997-04-25 2000-02-28 カナレ電気株式会社 量子波干渉層を有した半導体素子
US6091083A (en) * 1997-06-02 2000-07-18 Sharp Kabushiki Kaisha Gallium nitride type compound semiconductor light-emitting device having buffer layer with non-flat surface
GB2331625B (en) 1997-11-19 2003-02-26 Hassan Paddy Abdel Salam led Lamp
TW406442B (en) * 1998-07-09 2000-09-21 Sumitomo Electric Industries White colored LED and intermediate colored LED
DE19855637A1 (de) * 1998-12-02 2000-06-15 Aixtron Ag Verfahren und System zur Halbleiterkristallherstellung mit Temperaturverwaltung
WO2000033433A2 (en) * 1998-12-03 2000-06-08 Arizona Board Of Regents Compound semiconductor structures for optoelectronic devices
RU2142661C1 (ru) * 1998-12-29 1999-12-10 Швейкин Василий Иванович Инжекционный некогерентный излучатель
US6303404B1 (en) * 1999-05-28 2001-10-16 Yong Tae Moon Method for fabricating white light emitting diode using InGaN phase separation
JP2001007401A (ja) * 1999-06-23 2001-01-12 Sumitomo Electric Ind Ltd 化合物半導体発光素子
JP3862894B2 (ja) * 1999-08-18 2006-12-27 株式会社東芝 半導体レーザ装置
DE19943406C2 (de) * 1999-09-10 2001-07-19 Osram Opto Semiconductors Gmbh Lichtemissionsdiode mit Oberflächenstrukturierung
DE19952932C1 (de) * 1999-11-03 2001-05-03 Osram Opto Semiconductors Gmbh LED-Weißlichtquelle mit breitbandiger Anregung
DE19955747A1 (de) * 1999-11-19 2001-05-23 Osram Opto Semiconductors Gmbh Optische Halbleitervorrichtung mit Mehrfach-Quantentopf-Struktur
US6504171B1 (en) * 2000-01-24 2003-01-07 Lumileds Lighting, U.S., Llc Chirped multi-well active region LED
US6292576B1 (en) 2000-02-29 2001-09-18 Digital Persona, Inc. Method and apparatus for distinguishing a human finger from a reproduction of a fingerprint
JP2001244454A (ja) * 2000-02-29 2001-09-07 Horiba Ltd 分子認識型化学ccdデバイス
US6328456B1 (en) 2000-03-24 2001-12-11 Ledcorp Illuminating apparatus and light emitting diode
US6555958B1 (en) * 2000-05-15 2003-04-29 General Electric Company Phosphor for down converting ultraviolet light of LEDs to blue-green light
JP2001339121A (ja) * 2000-05-29 2001-12-07 Sharp Corp 窒化物半導体発光素子とそれを含む光学装置
KR100382481B1 (ko) * 2000-06-09 2003-05-01 엘지전자 주식회사 백색 발광 다이오드 소자 및 그 제조 방법
US6563133B1 (en) * 2000-08-09 2003-05-13 Ziptronix, Inc. Method of epitaxial-like wafer bonding at low temperature and bonded structure
US7064355B2 (en) * 2000-09-12 2006-06-20 Lumileds Lighting U.S., Llc Light emitting diodes with improved light extraction efficiency
US7009210B2 (en) * 2000-10-06 2006-03-07 Alphion Corporation Method and apparatus for bit-rate and format insensitive performance monitoring of lightwave signals
JP2002217456A (ja) * 2001-01-19 2002-08-02 Ngk Insulators Ltd 半導体発光素子
JP2002222989A (ja) * 2001-01-26 2002-08-09 Toshiba Corp 半導体発光素子
JP3791765B2 (ja) * 2001-06-08 2006-06-28 豊田合成株式会社 Iii族窒化物系化合物半導体発光素子
US6610598B2 (en) * 2001-11-14 2003-08-26 Solidlite Corporation Surface-mounted devices of light-emitting diodes with small lens
US6784462B2 (en) * 2001-12-13 2004-08-31 Rensselaer Polytechnic Institute Light-emitting diode with planar omni-directional reflector
US7252898B2 (en) * 2002-01-14 2007-08-07 The Board Of Trustees Of The University Of Illinois Fuel cells comprising laminar flow induced dynamic conducting interfaces, electronic devices comprising such cells, and methods employing same
JP3782357B2 (ja) * 2002-01-18 2006-06-07 株式会社東芝 半導体発光素子の製造方法
US20060175625A1 (en) * 2002-05-28 2006-08-10 Ryoji Yokotani Light emitting element, lighting device and surface emission illuminating device using it
JP2004072047A (ja) 2002-08-09 2004-03-04 Sumitomo Electric Ind Ltd 白色発光素子、白色発光素子用基板および白色発光素子用基板の製造方法
JP2004128057A (ja) * 2002-09-30 2004-04-22 Fuji Photo Film Co Ltd 発光装置およびその製造方法
US6784460B2 (en) * 2002-10-10 2004-08-31 Agilent Technologies, Inc. Chip shaping for flip-chip light emitting diode
CN101045862B (zh) * 2002-10-16 2012-05-09 日亚化学工业株式会社 氧氮化物荧光体及其制造方法以及使用该氧氮化物荧光体的发光装置
MY149573A (en) * 2002-10-16 2013-09-13 Nichia Corp Oxynitride phosphor and production process thereof, and light-emitting device using oxynitride phosphor
CN1256778C (zh) * 2002-10-22 2006-05-17 洲磊科技股份有限公司 AlGaInP发光二极管组件
JP2004158635A (ja) * 2002-11-06 2004-06-03 Stanley Electric Co Ltd 表面実装型チップled及びその製造方法
US6717362B1 (en) * 2002-11-14 2004-04-06 Agilent Technologies, Inc. Light emitting diode with gradient index layering
US7009213B2 (en) * 2003-07-31 2006-03-07 Lumileds Lighting U.S., Llc Light emitting devices with improved light extraction efficiency
US7282272B2 (en) * 2003-09-12 2007-10-16 3M Innovative Properties Company Polymerizable compositions comprising nanoparticles
US20050082562A1 (en) * 2003-10-15 2005-04-21 Epistar Corporation High efficiency nitride based light emitting device
KR100641989B1 (ko) 2003-10-15 2006-11-02 엘지이노텍 주식회사 질화물 반도체 발광소자
US20050084980A1 (en) * 2003-10-17 2005-04-21 Intel Corporation Method and device for detecting a small number of molecules using surface-enhanced coherant anti-stokes raman spectroscopy
US7080932B2 (en) * 2004-01-26 2006-07-25 Philips Lumileds Lighting Company, Llc LED with an optical system to increase luminance by recycling emitted light
US7161188B2 (en) * 2004-06-28 2007-01-09 Matsushita Electric Industrial Co., Ltd. Semiconductor light emitting element, semiconductor light emitting device, and method for fabricating semiconductor light emitting element
EP1776721A2 (en) * 2004-08-06 2007-04-25 Philips Intellectual Property & Standards GmbH Led lamp system
KR100649494B1 (ko) * 2004-08-17 2006-11-24 삼성전기주식회사 레이저를 이용하여 발광 다이오드 기판을 표면 처리하는발광 다이오드 제조 방법 및 이 방법에 의해 제조된 발광다이오드
JP4618551B2 (ja) * 2004-08-24 2011-01-26 富士電機ホールディングス株式会社 色変換フィルター基板および該色変換フィルター基板を具備した多色発光デバイス
JP2006093295A (ja) * 2004-09-22 2006-04-06 Nichia Chem Ind Ltd 半導体装置及びその製造方法
JP4922555B2 (ja) * 2004-09-24 2012-04-25 スタンレー電気株式会社 Led装置
EP1797594A2 (en) * 2004-09-28 2007-06-20 Philips Intellectual Property & Standards GmbH Light emitting device with improved conversion layer
US7304425B2 (en) * 2004-10-29 2007-12-04 3M Innovative Properties Company High brightness LED package with compound optical element(s)
US20060091411A1 (en) * 2004-10-29 2006-05-04 Ouderkirk Andrew J High brightness LED package
US20060094322A1 (en) * 2004-10-29 2006-05-04 Ouderkirk Andrew J Process for manufacturing a light emitting array
US20060091414A1 (en) * 2004-10-29 2006-05-04 Ouderkirk Andrew J LED package with front surface heat extractor
US7330319B2 (en) * 2004-10-29 2008-02-12 3M Innovative Properties Company High brightness LED package with multiple optical elements
US7404756B2 (en) * 2004-10-29 2008-07-29 3M Innovative Properties Company Process for manufacturing optical and semiconductor elements
US7402831B2 (en) * 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
US7745814B2 (en) * 2004-12-09 2010-06-29 3M Innovative Properties Company Polychromatic LED's and related semiconductor devices
JP4712372B2 (ja) * 2004-12-16 2011-06-29 株式会社半導体エネルギー研究所 発光装置
US7266279B1 (en) * 2005-03-25 2007-09-04 Hrl Laboratories, Llc Optically pumped stepped multi-well laser
WO2006113380A1 (en) * 2005-04-18 2006-10-26 3M Innovative Properties Company Multifunctional thick film reflective polarizer for displays
US8674375B2 (en) * 2005-07-21 2014-03-18 Cree, Inc. Roughened high refractive index layer/LED for high light extraction
US20070116423A1 (en) * 2005-11-22 2007-05-24 3M Innovative Properties Company Arrays of optical elements and method of manufacturing same
US7390117B2 (en) * 2006-05-02 2008-06-24 3M Innovative Properties Company LED package with compound converging optical element
US20070257270A1 (en) * 2006-05-02 2007-11-08 3M Innovative Properties Company Led package with wedge-shaped optical element
US20070257271A1 (en) * 2006-05-02 2007-11-08 3M Innovative Properties Company Led package with encapsulated converging optical element
US7525126B2 (en) * 2006-05-02 2009-04-28 3M Innovative Properties Company LED package with converging optical element
US7423297B2 (en) * 2006-05-03 2008-09-09 3M Innovative Properties Company LED extractor composed of high index glass
US8141384B2 (en) * 2006-05-03 2012-03-27 3M Innovative Properties Company Methods of making LED extractor arrays

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1596374A (zh) * 2001-11-28 2005-03-16 法国圣戈班玻璃厂 强透射光的结构化透明板
CN1445869A (zh) * 2002-03-14 2003-10-01 株式会社东芝 半导体发光芯片及半导体发光器件
US20040075102A1 (en) * 2002-10-21 2004-04-22 Nai-Chuan Chen AlGaInP light emitting diode
US20050051790A1 (en) * 2003-06-05 2005-03-10 Matsushita Electric Industrial Co., Ltd. Phosphor, semiconductor light emitting device, and fabrication method thereof
CN1573365A (zh) * 2003-06-09 2005-02-02 株式会社丰田自动织机 光学器件、面状照明装置和显示器
US20060091784A1 (en) * 2004-10-29 2006-05-04 Conner Arlie R LED package with non-bonded optical element
CN1697208A (zh) * 2005-01-14 2005-11-16 友达光电股份有限公司 白光光源的产生方法,白光发光元件及其制造方法

Also Published As

Publication number Publication date
KR20090018631A (ko) 2009-02-20
KR20090018623A (ko) 2009-02-20
WO2007146868A1 (en) 2007-12-21
TW200807768A (en) 2008-02-01
US20090207628A1 (en) 2009-08-20
CN101467275A (zh) 2009-06-24
US7541610B2 (en) 2009-06-02
WO2007146861A1 (en) 2007-12-21
CN101467271A (zh) 2009-06-24
EP2033234A4 (en) 2013-11-06
CN101467271B (zh) 2012-04-25
EP2033234A1 (en) 2009-03-11
EP2036135A4 (en) 2013-11-13
CN101467275B (zh) 2012-09-05
EP2036135A1 (en) 2009-03-18
US20080006832A1 (en) 2008-01-10
JP2009540618A (ja) 2009-11-19
JP2009540616A (ja) 2009-11-19
TW200817804A (en) 2008-04-16

Similar Documents

Publication Publication Date Title
CN101467271B (zh) 具有再发光半导体构造和会聚光学元件的led装置
US7952110B2 (en) LED device with re-emitting semiconductor construction and converging optical element
US20070284565A1 (en) Led device with re-emitting semiconductor construction and optical element
CN101467274B (zh) 具有再发射半导体构造和光学元件的led装置
US7863634B2 (en) LED device with re-emitting semiconductor construction and reflector
CN101467279B (zh) 具有再发光半导体构造的适用的led装置
US10461230B2 (en) Light emitting diode component
CN101467273B (zh) 具有再发光半导体构造和反射器的led装置
TWI443857B (zh) Solid state light emitting elements with photonic crystals

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20120404