CN102403430B - 石墨烯发光装置及其制造方法 - Google Patents

石墨烯发光装置及其制造方法 Download PDF

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Publication number
CN102403430B
CN102403430B CN201110276450.XA CN201110276450A CN102403430B CN 102403430 B CN102403430 B CN 102403430B CN 201110276450 A CN201110276450 A CN 201110276450A CN 102403430 B CN102403430 B CN 102403430B
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graphene
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emitting device
active
light
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CN102403430A (zh
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黄省元
高建宇
沈成铉
郑薰在
成汉珪
孙哲守
李镇贤
高炯德
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Samsung Electronics Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/826—Materials of the light-emitting regions comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211—Fullerenes, e.g. C60

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  • Led Devices (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Luminescent Compositions (AREA)
  • Led Device Packages (AREA)
CN201110276450.XA 2010-09-16 2011-09-16 石墨烯发光装置及其制造方法 Active CN102403430B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20100091259 2010-09-16
KR10-2010-0091259 2010-09-16
KR10-2011-0092511 2011-09-14
KR1020110092511A KR101850538B1 (ko) 2010-09-16 2011-09-14 그래핀 발광소자 및 그 제조방법

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CN102403430A CN102403430A (zh) 2012-04-04
CN102403430B true CN102403430B (zh) 2016-08-03

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CN105016328B (zh) * 2014-04-25 2017-06-06 中国科学院物理研究所 一种在碳化硅衬底上生长p型石墨烯的方法
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KR102318317B1 (ko) 2014-05-27 2021-10-28 실라나 유브이 테크놀로지스 피티이 리미티드 반도체 구조물과 초격자를 사용하는 진보된 전자 디바이스 구조
CN106415854B (zh) * 2014-05-27 2019-10-01 斯兰纳Uv科技有限公司 包括n型和p型超晶格的电子装置
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CN104124348B (zh) * 2014-07-04 2016-08-24 清华大学 颜色可调的石墨烯基薄膜电致发光器件及其制备方法
WO2016105481A2 (en) * 2014-12-24 2016-06-30 The Trustees Of Columbia University In The City Of New York Light emission from electrically biased graphene
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US10892327B2 (en) 2015-09-14 2021-01-12 University College Cork Semi-metal rectifying junction
CN105303985B (zh) 2015-11-24 2019-02-26 深圳市华星光电技术有限公司 石墨烯显示器及其显示驱动方法
CN105449067B (zh) * 2015-12-31 2017-12-19 白德旭 一种石墨烯led芯片及其制备方法
CN105607346A (zh) * 2016-03-28 2016-05-25 深圳市华星光电技术有限公司 一种石墨烯背光模组及液晶显示装置
TWI593134B (zh) * 2016-05-19 2017-07-21 Method and structure for manufacturing graphene quantum dot on light-emitting diode
CN105789469B (zh) * 2016-05-30 2017-12-29 京东方科技集团股份有限公司 一种发光单元及制作方法、显示面板及显示装置
CN105869574B (zh) * 2016-06-07 2017-03-29 京东方科技集团股份有限公司 一种像素驱动电路及其驱动方法、阵列基板及显示装置
CN106197687B (zh) * 2016-07-19 2019-03-05 中国科学院重庆绿色智能技术研究院 一种基于石墨烯量子点的微测辐射热计
CN106374022B (zh) * 2016-10-18 2018-07-24 广东东邦科技有限公司 基于多层石墨烯量子碳基材料的光源器件及其制备方法
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JP2012064944A (ja) 2012-03-29
JP5904734B2 (ja) 2016-04-20
US20120068152A1 (en) 2012-03-22
CN102403430A (zh) 2012-04-04
US9166099B2 (en) 2015-10-20

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