CN102394209B - 样本厚度的测量和终点确定 - Google Patents
样本厚度的测量和终点确定 Download PDFInfo
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- CN102394209B CN102394209B CN201110252293.9A CN201110252293A CN102394209B CN 102394209 B CN102394209 B CN 102394209B CN 201110252293 A CN201110252293 A CN 201110252293A CN 102394209 B CN102394209 B CN 102394209B
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
- H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/24455—Transmitted particle detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/304—Controlling tubes
- H01J2237/30466—Detecting endpoint of process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3174—Etching microareas
- H01J2237/31745—Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31749—Focused ion beam
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Plasma & Fusion (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Sampling And Sample Adjustment (AREA)
- Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11039408P | 2008-10-31 | 2008-10-31 | |
| US61/110394 | 2008-10-31 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200980153190.8A Division CN102272878B (zh) | 2008-10-31 | 2009-11-02 | 样本厚度的测量和终点确定 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102394209A CN102394209A (zh) | 2012-03-28 |
| CN102394209B true CN102394209B (zh) | 2015-01-14 |
Family
ID=42129591
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110252293.9A Active CN102394209B (zh) | 2008-10-31 | 2009-11-02 | 样本厚度的测量和终点确定 |
| CN200980153190.8A Active CN102272878B (zh) | 2008-10-31 | 2009-11-02 | 样本厚度的测量和终点确定 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200980153190.8A Active CN102272878B (zh) | 2008-10-31 | 2009-11-02 | 样本厚度的测量和终点确定 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US8170832B2 (https=) |
| EP (2) | EP2367195B1 (https=) |
| JP (2) | JP5649583B2 (https=) |
| CN (2) | CN102394209B (https=) |
| WO (1) | WO2010051546A2 (https=) |
Families Citing this family (47)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5649583B2 (ja) | 2008-10-31 | 2015-01-07 | エフ イー アイ カンパニＦｅｉ Ｃｏｍｐａｎｙ | 加工終点検出方法及び装置 |
| WO2011011661A2 (en) * | 2009-07-24 | 2011-01-27 | Omniprobe, Inc. | Method and apparatus for the monitoring of sample milling in a charged particle instrument |
| JP5676617B2 (ja) * | 2010-08-18 | 2015-02-25 | 株式会社日立ハイテクノロジーズ | 電子線装置 |
| EP2461347A1 (en) * | 2010-12-06 | 2012-06-06 | Fei Company | Detector system for transmission electron microscope |
| JP5473891B2 (ja) * | 2010-12-27 | 2014-04-16 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置及び試料作製方法 |
| JP2013057638A (ja) * | 2011-09-09 | 2013-03-28 | Sumitomo Rubber Ind Ltd | ゴム材料のシミュレーション方法 |
| CN102538670B (zh) * | 2011-10-31 | 2015-04-22 | 上海显恒光电科技股份有限公司 | 一种微米级电子束焦斑尺寸的光学测量装置及其方法 |
| JP6062628B2 (ja) * | 2011-12-08 | 2017-01-18 | 株式会社日立ハイテクサイエンス | 薄膜試料作製装置及び方法 |
| JP2013167505A (ja) * | 2012-02-15 | 2013-08-29 | Sumitomo Electric Ind Ltd | 薄膜試料の作製方法及び膜厚測定方法 |
| WO2014014446A1 (en) * | 2012-07-16 | 2014-01-23 | Fei Company | Endpointing for focused ion beam processing |
| US10110854B2 (en) | 2012-07-27 | 2018-10-23 | Gatan, Inc. | Ion beam sample preparation apparatus and methods |
| US10465293B2 (en) | 2012-08-31 | 2019-11-05 | Fei Company | Dose-based end-pointing for low-kV FIB milling TEM sample preparation |
| TWI461653B (zh) * | 2013-02-06 | 2014-11-21 | Inotera Memories Inc | 測量樣本尺寸的方法 |
| WO2014155557A1 (ja) * | 2013-03-27 | 2014-10-02 | 富士通株式会社 | 試料測定装置、試料測定方法、半導体装置の評価方法、およびコンピュータプログラム |
| GB201308436D0 (en) | 2013-05-10 | 2013-06-19 | Oxford Instr Nanotechnology Tools Ltd | Metrology for preparation of thin samples |
| CZ304824B6 (cs) | 2013-07-11 | 2014-11-19 | Tescan Orsay Holding, A.S. | Způsob opracovávání vzorku v zařízení se dvěma nebo více částicovými svazky a zařízení k jeho provádění |
| US8933401B1 (en) * | 2013-10-25 | 2015-01-13 | Lawrence Livermore National Security, Llc | System and method for compressive scanning electron microscopy |
| EP2869328A1 (en) | 2013-10-29 | 2015-05-06 | Fei Company | Differential imaging with pattern recognition for process automation of cross sectioning applications |
| CN103868773A (zh) * | 2014-03-24 | 2014-06-18 | 上海华力微电子有限公司 | 透射电镜样品的制作方法 |
| US9594035B2 (en) * | 2014-04-25 | 2017-03-14 | Revera, Incorporated | Silicon germanium thickness and composition determination using combined XPS and XRF technologies |
| JP6240754B2 (ja) * | 2014-05-09 | 2017-11-29 | 株式会社日立ハイテクノロジーズ | 試料加工方法、及び荷電粒子線装置 |
| US9779914B2 (en) * | 2014-07-25 | 2017-10-03 | E.A. Fischione Instruments, Inc. | Apparatus for preparing a sample for microscopy |
| US11004656B2 (en) * | 2014-10-15 | 2021-05-11 | Gatan, Inc. | Methods and apparatus for determining, using, and indicating ion beam working properties |
| US20160189929A1 (en) * | 2014-10-29 | 2016-06-30 | Omniprobe, Inc. | Rapid tem sample preparation method with backside fib milling |
| CN104697836B (zh) * | 2015-03-30 | 2018-04-06 | 上海华力微电子有限公司 | 一种tem样品制备方法 |
| EP3104155A1 (en) | 2015-06-09 | 2016-12-14 | FEI Company | Method of analyzing surface modification of a specimen in a charged-particle microscope |
| NL2017844A (en) * | 2015-12-22 | 2017-06-28 | Asml Netherlands Bv | Focus control arrangement and method |
| US9837246B1 (en) | 2016-07-22 | 2017-12-05 | Fei Company | Reinforced sample for transmission electron microscope |
| US9779910B1 (en) | 2016-09-13 | 2017-10-03 | Qualcomm Incorporated | Utilization of voltage contrast during sample preparation for transmission electron microscopy |
| DE102017209423A1 (de) * | 2017-06-02 | 2018-12-06 | Carl Zeiss Microscopy Gmbh | Elektronenstrahltomographieverfahren und Elektronenstrahltomographiesystem |
| CN107894357B (zh) * | 2017-11-08 | 2021-03-05 | 上海华力微电子有限公司 | 一种自动化的样本减薄方法 |
| EP3531439B1 (en) | 2018-02-22 | 2020-06-24 | FEI Company | Intelligent pre-scan in scanning transmission charged particle microscopy |
| DE102018117492B3 (de) | 2018-07-19 | 2019-10-02 | Carl Zeiss Microscopy Gmbh | Verfahren zum Betreiben einer Mehrzahl von FIB-SEM-Systemen |
| EP3648138A1 (en) * | 2018-10-31 | 2020-05-06 | FEI Company | Measurement and endpointing of sample thickness |
| CN109350109B (zh) * | 2018-12-06 | 2022-03-04 | 北京锐视康科技发展有限公司 | 多功能牙科扫描系统 |
| WO2020160788A1 (en) * | 2019-02-08 | 2020-08-13 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e. V. | Apparatus and method for preparing a sample for transmission microscopy investigations by ion beam initiated ablation |
| CN111024017B (zh) * | 2019-12-04 | 2021-10-15 | 中国电子科技集团公司第十三研究所 | 一种膜厚样片及膜厚样片的制备方法 |
| WO2021171490A1 (ja) * | 2020-02-27 | 2021-09-02 | 株式会社日立ハイテク | 半導体解析システム |
| US11171048B2 (en) * | 2020-03-12 | 2021-11-09 | Fei Company | Adaptive endpoint detection for automated delayering of semiconductor samples |
| NL2026054B1 (en) * | 2020-07-13 | 2022-03-15 | Delmic Ip B V | Method and apparatus for micromachining a sample using a Focused Ion Beam |
| CN113008171A (zh) * | 2021-03-19 | 2021-06-22 | 长江存储科技有限责任公司 | 一种样品厚度的确定方法 |
| WO2022216970A1 (en) * | 2021-04-07 | 2022-10-13 | Protochips, Inc. | Systems and methods of metadata and image management for reviewing data from transmission electron microscope (tem) sessions |
| JP2024514817A (ja) | 2021-04-07 | 2024-04-03 | プロトチップス，インコーポレイテッド | 透過型電子顕微鏡（ｔｅｍ）セッションに由来するデータをレビューするためのメタデータおよび画像管理のシステムおよび方法 |
| CN113324488B (zh) * | 2021-05-14 | 2023-04-18 | 长江存储科技有限责任公司 | 一种厚度测量方法和系统 |
| NL2032641B1 (en) | 2022-07-29 | 2024-02-06 | Univ Delft Tech | Method and apparatus for in-situ sample quality inspection in cryogenic focused ion beam milling |
| US20240047281A1 (en) * | 2022-08-03 | 2024-02-08 | Nxp Usa, Inc. | Structure and method for test-point access in a semiconductor |
| DE102023134086A1 (de) * | 2023-12-06 | 2025-06-12 | Carl Zeiss Microscopy Gmbh | Verfahren zum Betrieb eines Teilchenstrahlgeräts, Verfahren zum Bestimmen eines Bearbeitungspunktes, Computerprogrammprodukt und Teilchenstrahlgerät zur Durchführung von mindestens einem der Verfahren |
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- 2009-11-02 WO PCT/US2009/063007 patent/WO2010051546A2/en not_active Ceased
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| Publication number | Publication date |
|---|---|
| EP2367195A3 (en) | 2012-11-21 |
| JP5852725B2 (ja) | 2016-02-03 |
| EP2351062A4 (en) | 2012-10-31 |
| JP2012507728A (ja) | 2012-03-29 |
| CN102394209A (zh) | 2012-03-28 |
| WO2010051546A2 (en) | 2010-05-06 |
| CN102272878B (zh) | 2014-07-23 |
| US8170832B2 (en) | 2012-05-01 |
| JP2015038509A (ja) | 2015-02-26 |
| US20120187285A1 (en) | 2012-07-26 |
| EP2351062A2 (en) | 2011-08-03 |
| JP5649583B2 (ja) | 2015-01-07 |
| US20100116977A1 (en) | 2010-05-13 |
| WO2010051546A3 (en) | 2010-08-05 |
| EP2367195B1 (en) | 2014-03-12 |
| CN102272878A (zh) | 2011-12-07 |
| US9184025B2 (en) | 2015-11-10 |
| EP2367195A2 (en) | 2011-09-21 |
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