CN102394199B - 具有布置成传导开关电流的衬底的mems开关阵列 - Google Patents
具有布置成传导开关电流的衬底的mems开关阵列 Download PDFInfo
- Publication number
- CN102394199B CN102394199B CN201110175517.0A CN201110175517A CN102394199B CN 102394199 B CN102394199 B CN 102394199B CN 201110175517 A CN201110175517 A CN 201110175517A CN 102394199 B CN102394199 B CN 102394199B
- Authority
- CN
- China
- Prior art keywords
- mems
- substrate
- mechanical system
- electro mechanical
- micro electro
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 197
- 238000003491 array Methods 0.000 claims description 35
- 238000009413 insulation Methods 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 230000000875 corresponding effect Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000000007 visual effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 210000000056 organ Anatomy 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
- H01H2001/0063—Switches making use of microelectromechanical systems [MEMS] having electrostatic latches, i.e. the activated position is kept by electrostatic forces other than the activation force
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
- H01H2001/0084—Switches making use of microelectromechanical systems [MEMS] with perpendicular movement of the movable contact relative to the substrate
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Micromachines (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/817578 | 2010-06-17 | ||
| US12/817,578 US8576029B2 (en) | 2010-06-17 | 2010-06-17 | MEMS switching array having a substrate arranged to conduct switching current |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102394199A CN102394199A (zh) | 2012-03-28 |
| CN102394199B true CN102394199B (zh) | 2015-11-25 |
Family
ID=44823403
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110175517.0A Active CN102394199B (zh) | 2010-06-17 | 2011-06-17 | 具有布置成传导开关电流的衬底的mems开关阵列 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8576029B2 (enExample) |
| EP (1) | EP2398028B1 (enExample) |
| JP (1) | JP5802060B2 (enExample) |
| CN (1) | CN102394199B (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8635765B2 (en) * | 2011-06-15 | 2014-01-28 | International Business Machines Corporation | Method of forming micro-electrical-mechanical structure (MEMS) |
| US8916996B2 (en) * | 2011-07-29 | 2014-12-23 | General Electric Company | Electrical distribution system |
| US9573801B2 (en) * | 2011-09-13 | 2017-02-21 | Texas Instruments Incorporated | MEMS electrostatic actuator device for RF varactor applications |
| US8659326B1 (en) | 2012-09-28 | 2014-02-25 | General Electric Company | Switching apparatus including gating circuitry for actuating micro-electromechanical system (MEMS) switches |
| US9583294B2 (en) * | 2014-04-25 | 2017-02-28 | Analog Devices Global | MEMS swtich with internal conductive path |
| US9362608B1 (en) * | 2014-12-03 | 2016-06-07 | General Electric Company | Multichannel relay assembly with in line MEMS switches |
| JP2019503057A (ja) | 2016-02-04 | 2019-01-31 | アナログ・デヴァイシズ・グローバル | 能動的開放型ｍｅｍｓスイッチデバイス |
| EP3654358A1 (en) | 2018-11-15 | 2020-05-20 | Infineon Technologies Austria AG | Mems power relay circuit |
| DE102019211460A1 (de) * | 2019-07-31 | 2021-02-04 | Siemens Aktiengesellschaft | Anordnung von MEMS-Schaltern |
| EP3929960A1 (de) * | 2020-06-26 | 2021-12-29 | Siemens Aktiengesellschaft | Mems-schalter, verfahren zur herstellung eines mems-schalters und vorrichtung |
| EP3979291A1 (de) * | 2020-09-30 | 2022-04-06 | Siemens Aktiengesellschaft | Elektronikmodul und anlage |
| US12365579B2 (en) | 2021-12-29 | 2025-07-22 | Menlo Microsystems, Inc. | Distributed MEMS switch array design with multiple input/output ports |
| US20240274388A1 (en) * | 2023-02-14 | 2024-08-15 | Texas Instruments Incorporated | Electromechanical switch |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101226856A (zh) * | 2007-01-18 | 2008-07-23 | 富士通株式会社 | 微开关器件及其制造方法 |
Family Cites Families (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05242788A (ja) * | 1992-02-25 | 1993-09-21 | Matsushita Electric Works Ltd | 静電リレー |
| US6384353B1 (en) * | 2000-02-01 | 2002-05-07 | Motorola, Inc. | Micro-electromechanical system device |
| US7294563B2 (en) | 2000-08-10 | 2007-11-13 | Applied Materials, Inc. | Semiconductor on insulator vertical transistor fabrication and doping process |
| US6504118B2 (en) * | 2000-10-27 | 2003-01-07 | Daniel J Hyman | Microfabricated double-throw relay with multimorph actuator and electrostatic latch mechanism |
| US20020096421A1 (en) * | 2000-11-29 | 2002-07-25 | Cohn Michael B. | MEMS device with integral packaging |
| JP3750574B2 (ja) * | 2001-08-16 | 2006-03-01 | 株式会社デンソー | 薄膜電磁石およびこれを用いたスイッチング素子 |
| US20030057544A1 (en) * | 2001-09-13 | 2003-03-27 | Nathan Richard J. | Integrated assembly protocol |
| US6778046B2 (en) * | 2001-09-17 | 2004-08-17 | Magfusion Inc. | Latching micro magnetic relay packages and methods of packaging |
| EP1331656A1 (en) * | 2002-01-23 | 2003-07-30 | Alcatel | Process for fabricating an adsl relay array |
| US6624003B1 (en) * | 2002-02-06 | 2003-09-23 | Teravicta Technologies, Inc. | Integrated MEMS device and package |
| DE10217610B4 (de) | 2002-04-19 | 2005-11-03 | Infineon Technologies Ag | Metall-Halbleiter-Kontakt, Halbleiterbauelement, integrierte Schaltungsanordnung und Verfahren |
| JP2005536013A (ja) | 2002-08-08 | 2005-11-24 | エックスコム ワイアレス インコーポレイテッド | マルチモルフ・アクチュエータと静電ラッチメカニズムとを有するマイクロ・ファブリケーションされた双投リレー |
| DE10238523B4 (de) * | 2002-08-22 | 2014-10-02 | Epcos Ag | Verkapseltes elektronisches Bauelement und Verfahren zur Herstellung |
| FR2845075B1 (fr) * | 2002-09-27 | 2005-08-05 | Thales Sa | Microcommutateurs a actuation electrostatique a faible temps de reponse et commutation de puissance et procede de realisation associe |
| US7719054B2 (en) | 2006-05-31 | 2010-05-18 | Advanced Analogic Technologies, Inc. | High-voltage lateral DMOS device |
| KR100513723B1 (ko) * | 2002-11-18 | 2005-09-08 | 삼성전자주식회사 | Ｍｅｍｓ스위치 |
| JP4066928B2 (ja) * | 2002-12-12 | 2008-03-26 | 株式会社村田製作所 | Ｒｆｍｅｍｓスイッチ |
| ITMI20022769A1 (it) * | 2002-12-24 | 2004-06-25 | St Microelectronics Srl | Metodo per realizzare un interruttore |
| US6873017B2 (en) | 2003-05-14 | 2005-03-29 | Fairchild Semiconductor Corporation | ESD protection for semiconductor products |
| US7170155B2 (en) * | 2003-06-25 | 2007-01-30 | Intel Corporation | MEMS RF switch module including a vertical via |
| US20050012212A1 (en) * | 2003-07-17 | 2005-01-20 | Cookson Electronics, Inc. | Reconnectable chip interface and chip package |
| US20050225412A1 (en) * | 2004-03-31 | 2005-10-13 | Limcangco Naomi O | Microelectromechanical switch with an arc reduction environment |
| DE102004026232B4 (de) | 2004-05-28 | 2006-05-04 | Infineon Technologies Ag | Verfahren zum Ausbilden einer integrierten Halbleiterschaltungsanordnung |
| EP1809568A2 (en) | 2004-09-27 | 2007-07-25 | Idc, Llc | Mems switches with deforming membranes |
| DE102005026408B3 (de) | 2005-06-08 | 2007-02-01 | Infineon Technologies Ag | Verfahren zur Herstellung einer Stoppzone in einem Halbleiterkörper und Halbleiterbauelement mit einer Stoppzone |
| JP4489651B2 (ja) * | 2005-07-22 | 2010-06-23 | 株式会社日立製作所 | 半導体装置およびその製造方法 |
| US7276991B2 (en) | 2005-09-09 | 2007-10-02 | Innovative Micro Technology | Multiple switch MEMS structure and method of manufacture |
| US7663456B2 (en) | 2005-12-15 | 2010-02-16 | General Electric Company | Micro-electromechanical system (MEMS) switch arrays |
| JP4234737B2 (ja) * | 2006-07-24 | 2009-03-04 | 株式会社東芝 | Ｍｅｍｓスイッチ |
| US7554154B2 (en) | 2006-07-28 | 2009-06-30 | Alpha Omega Semiconductor, Ltd. | Bottom source LDMOSFET structure and method |
| US7679104B2 (en) | 2006-11-09 | 2010-03-16 | The Furukawa Electric Co., Ltd. | Vertical type semiconductor device and manufacturing method of the device |
| US7332835B1 (en) | 2006-11-28 | 2008-02-19 | General Electric Company | Micro-electromechanical system based switching module serially stackable with other such modules to meet a voltage rating |
| DE102006061386B3 (de) * | 2006-12-23 | 2008-06-19 | Atmel Germany Gmbh | Integrierte Anordnung, ihre Verwendung und Verfahren zu ihrer Herstellung |
| US7663196B2 (en) * | 2007-02-09 | 2010-02-16 | Freescale Semiconductor, Inc. | Integrated passive device and method of fabrication |
| US7605466B2 (en) | 2007-10-15 | 2009-10-20 | General Electric Company | Sealed wafer packaging of microelectromechanical systems |
| US7915696B2 (en) * | 2007-10-24 | 2011-03-29 | General Electric Company | Electrical connection through a substrate to a microelectromechanical device |
| JP4492677B2 (ja) * | 2007-11-09 | 2010-06-30 | セイコーエプソン株式会社 | アクティブマトリクス装置、電気光学表示装置、および電子機器 |
| US7609136B2 (en) | 2007-12-20 | 2009-10-27 | General Electric Company | MEMS microswitch having a conductive mechanical stop |
| US7692519B2 (en) | 2007-12-21 | 2010-04-06 | General Electric Company | MEMS switch with improved standoff voltage control |
-
2010
- 2010-06-17 US US12/817,578 patent/US8576029B2/en active Active
-
2011
- 2011-06-10 JP JP2011129654A patent/JP5802060B2/ja active Active
- 2011-06-14 EP EP11169822.1A patent/EP2398028B1/en active Active
- 2011-06-17 CN CN201110175517.0A patent/CN102394199B/zh active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101226856A (zh) * | 2007-01-18 | 2008-07-23 | 富士通株式会社 | 微开关器件及其制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102394199A (zh) | 2012-03-28 |
| EP2398028A2 (en) | 2011-12-21 |
| JP2012004112A (ja) | 2012-01-05 |
| US20110308924A1 (en) | 2011-12-22 |
| EP2398028B1 (en) | 2015-08-12 |
| EP2398028A3 (en) | 2012-09-05 |
| JP5802060B2 (ja) | 2015-10-28 |
| US8576029B2 (en) | 2013-11-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102394199B (zh) | 具有布置成传导开关电流的衬底的mems开关阵列 | |
| EP3979306A1 (en) | Semiconductor device having stepped multi-stack transistor structure | |
| KR102195406B1 (ko) | 핀펫과 로컬 인터커넥트 층을 포함하는 반도체 장치 및 그 제조 방법 | |
| CN101465243A (zh) | 具有双致动器和共栅极的mems微型开关 | |
| US20030107875A1 (en) | Power semiconductor module | |
| CN101533740A (zh) | 具有导电机械停止器的mems微开关 | |
| TW201240253A (en) | Switch gear | |
| JP2015225918A (ja) | 半導体モジュールおよび半導体スイッチ | |
| JP2009295804A (ja) | 半導体装置 | |
| US7915696B2 (en) | Electrical connection through a substrate to a microelectromechanical device | |
| TW201626012A (zh) | 波導結構以及其製作方法 | |
| EP4404259A1 (en) | Power semiconductor module and power conversion device | |
| CN1354514A (zh) | 高功率半导体模块及其应用 | |
| US20180026160A1 (en) | Led chip with integrated electromechanical switch | |
| US20090026880A1 (en) | Micromechanical device with piezoelectric and electrostatic actuation and method therefor | |
| KR20150040590A (ko) | 단위열전모듈 및 이를 포함하는 열전모듈, 냉각장치 | |
| JP2022034300A (ja) | パワー半導体モジュールおよび電力変換装置 | |
| JPH09213191A (ja) | 静電型可動接点素子および静電型可動接点集積回路 | |
| CN111416421B (zh) | 一种双电源切换动静触头系统、切换开关及电气设备 | |
| JP2004319502A (ja) | 屈曲型スイッチバーを含む高周波ラッチングリレー | |
| US8120133B2 (en) | Micro-actuator and locking switch | |
| US20080223699A1 (en) | Mems actuators and switches | |
| CN115706083A (zh) | 用于半导体裸片组件的复合介电结构及相关联系统和方法 | |
| CN209071323U (zh) | 集成电路芯片 | |
| CN103635985B (zh) | 模块化电气开关 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |