US20050012212A1 - Reconnectable chip interface and chip package - Google Patents
Reconnectable chip interface and chip package Download PDFInfo
- Publication number
- US20050012212A1 US20050012212A1 US10/621,773 US62177303A US2005012212A1 US 20050012212 A1 US20050012212 A1 US 20050012212A1 US 62177303 A US62177303 A US 62177303A US 2005012212 A1 US2005012212 A1 US 2005012212A1
- Authority
- US
- United States
- Prior art keywords
- substrate
- projections
- assembly
- circuit device
- set forth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000000758 substrate Substances 0.000 claims abstract description 462
- 230000004323 axial length Effects 0.000 claims abstract description 48
- 229910052751 metal Inorganic materials 0.000 claims description 32
- 239000002184 metal Substances 0.000 claims description 32
- 239000007787 solid Substances 0.000 claims description 24
- 239000000969 carrier Substances 0.000 claims description 16
- 238000003780 insertion Methods 0.000 claims description 12
- 230000003287 optical Effects 0.000 claims description 6
- 235000012431 wafers Nutrition 0.000 description 80
- 238000000034 method Methods 0.000 description 48
- 238000004519 manufacturing process Methods 0.000 description 42
- 230000000875 corresponding Effects 0.000 description 26
- 239000000463 material Substances 0.000 description 26
- 229910000679 solder Inorganic materials 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 14
- 239000000853 adhesive Substances 0.000 description 12
- 230000001070 adhesive Effects 0.000 description 12
- 239000000919 ceramic Substances 0.000 description 12
- 230000023298 conjugation with cellular fusion Effects 0.000 description 10
- 230000013011 mating Effects 0.000 description 10
- 230000021037 unidirectional conjugation Effects 0.000 description 10
- 210000002832 Shoulder Anatomy 0.000 description 8
- 239000008393 encapsulating agent Substances 0.000 description 8
- 230000005693 optoelectronics Effects 0.000 description 8
- 238000004806 packaging method and process Methods 0.000 description 8
- 230000002633 protecting Effects 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 6
- 230000001681 protective Effects 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000009713 electroplating Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000004377 microelectronic Methods 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 229910001111 Fine metal Inorganic materials 0.000 description 2
- 240000004282 Grewia occidentalis Species 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 238000003698 laser cutting Methods 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000005459 micromachining Methods 0.000 description 2
- 239000002991 molded plastic Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000002093 peripheral Effects 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000009877 rendering Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- 238000000489 vacuum metal deposition Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/002—Aligning microparts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05005—Structure
- H01L2224/05009—Bonding area integrally formed with a via connection of the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05568—Disposition the whole external layer protruding from the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05573—Single external layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/1012—Auxiliary members for bump connectors, e.g. spacers
- H01L2224/10122—Auxiliary members for bump connectors, e.g. spacers being formed on the semiconductor or solid-state body to be connected
- H01L2224/10135—Alignment aids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16104—Disposition relative to the bonding area, e.g. bond pad
- H01L2224/16105—Disposition relative to the bonding area, e.g. bond pad the bump connector connecting bonding areas being not aligned with respect to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8112—Aligning
- H01L2224/81136—Aligning involving guiding structures, e.g. spacers or supporting members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8112—Aligning
- H01L2224/81136—Aligning involving guiding structures, e.g. spacers or supporting members
- H01L2224/81138—Aligning involving guiding structures, e.g. spacers or supporting members the guiding structures being at least partially left in the finished device
- H01L2224/81139—Guiding structures on the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8112—Aligning
- H01L2224/81136—Aligning involving guiding structures, e.g. spacers or supporting members
- H01L2224/81138—Aligning involving guiding structures, e.g. spacers or supporting members the guiding structures being at least partially left in the finished device
- H01L2224/81141—Guiding structures both on and outside the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81193—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81194—Lateral distribution of the bump connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81897—Mechanical interlocking, e.g. anchoring, hook and loop-type fastening or the like
- H01L2224/81898—Press-fitting, i.e. pushing the parts together and fastening by friction, e.g. by compression of one part against the other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01024—Chromium [Cr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01027—Cobalt [Co]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01075—Rhenium [Re]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19042—Component type being an inductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
Abstract
An assembly of the present invention has a substrate and an integrated circuit device adapted to be electrically and mechanically connected to the substrate. Electrical connection pads on the circuit device and on the substrate contact one another when the circuit device and the substrate are connected. At least one first projection on one of the device and on the substrate and at least two second projections on the other of the device and the substrate each have a respective axial length and are sized and shaped for a close friction fit along their axial lengths when the projections are interdigitated relative to one another. An integrated circuit device package of the present invention includes an integrated circuit device and an interconnect substrate for mounting the circuit device on an electronic circuit substrate. The interconnect substrate mates with the active side of the circuit device to form an enclosed space.
Description
- The present invention relates generally to an integrated circuit assembly, and more particularly to an electromechanical connection between a microchip and a substrate. This invention also relates to an integrated circuit device package for protecting an integrated circuit device and a process for forming such a package.
- Integrated circuit devices (i.e., microchips, chips, or dies) are typically connected to a substrate (e.g., chip carrier, package, or circuit board) using well-know methods such as Direct Chip Attach (DCA) and wire bonding. DCA uses joining materials such as metallurgical solders or polymeric conductive adhesives that are typically applied to the electrical connection pads (i.e, bond pads) of the chip. The chip can then be electromechanically connected to corresponding bond pads on a substrate by applying heat to melt, or reflow the solder. A protective polymer, called underfill, is applied to the gap between the chip and substrate and then hardened by heating to cause the liquid to polymerize to a solid and provide further bonding between the chip and substrate. In wire bonding, an adhesive or solder is used to attach the chip to the substrate. After chip attachment, fine metal wires are then welded to each chip electrical connection pad and to the corresponding substrate electrical connection pad by using heat or ultrasonic energy. Reference may be made to U.S. Pat. Nos. 5,439,162 and 5,665,654, both of which are incorporated by reference herein for all purposes, for additional background information relating to DCA and wire bonding chip attachment processes. While DCA and wire bonding processes typically result in a reliable chip connection, the connection is considered permanent and does not allow removal and reconnection of the chip. Also, the heat required to reflow the solder or adhesive frequently damages the microchip and decreases production efficiencies.
- Existing electromechanical chip connection methods that eliminate thermal bonding processes allow a conventional microchip device to be electrically and mechanically mounted on a substrate of the circuit so that the chip can be removed and reconnected without heating the chip or the substrate. These conventional electro-mechanical connection methods typically include metallized interlocking structures (i.e., hook and loop configurations, locking inserts and sockets, interlocking micromechanical barbs) located on the electrical connection pads of the microchip and the substrate. Reference may be made to U.S. Pat. Nos. 5,411,400, 5,774,341, and 5,903,059, which are incorporated by reference herein for all purposes, for additional background information relating to existing reconnectable electromechanical connections between an electronic device and a substrate. Existing reconnectable chip interface structures have not seen widespread acceptance in the industry because of high manufacturing costs and low reliability of operation.
- MEMS, or Micro-Electro-Mechanical Systems, are integrated circuit devices that often have moving parts, or microstructures that can cause materials to move (as with thermal ink jet printer chips). A general requirement for packaging MEMS devices is that no encapsulant or enclosure can make contact with the active surface, or face, of the chip. Even integrated circuit devices without moving parts, such as radio frequency components including inductor coils, are better served by packages with a free space since encapsulants can “detune” a high-frequency device. DCA cannot be used to directly connect the MEMS device to an electronic substrate because the underfill that is applied to the area between the chip and the substrate, would cover the active surface. Unfortunately, the conventional low cost packaging method, transfer molding, applies plastic encapsulant over the chip thus rendering most MEMS devices useless. The same is true of liquid encapsulants applied by needle dispensing. No effective, low cost packaging method for MEMS devices now exists.
- The most common package for a MEMS device or other integrated circuit device is a metal or ceramic hermetic enclosure that can be conceptually regarded as a tiny box with a lid applied after the chip is inserted and connected. Insulated electrical leads must pass through to the outside of the box thus adding cost and limiting the number of connections. These existing hermetic enclosures are made of metal or ceramic and cost approximately 10 to 100 times more than transfer molded plastic packages. The hermetic lid must be welded, soldered or brazed and this can heat the devices within the enclosure that are usually heat-sensitive. Typical metal or ceramic hermetic enclosures are generally much larger than the size of the chip and require much more circuit board mounting space than if the chip were directly mounted to the board.
- Alternative chip packaging designs, referred to as chip-scale packages (CSP), reduce the size of the package to take up less circuit board space. Existing CSP designs have a cap attached to a base substrate on which the integrated circuit device is mounted. A gasket or adhesive layer around the periphery of the electrical connection pads on the base wafer bonds and seals the cap to the wafer to provide an enclosure that is significantly larger than the active side of the integrated circuit device. Reference may be made to U.S. Pat. Nos. 6,228,675 and 6,441,481, which are incorporated by reference herein for all purposes, for additional background information relating to existing CSP designs. Existing CSP designs lack an interconnect for direct electrical connection to the circuit board. As a result, the capped microchip must go through interconnect processing (e.g., wire bonding) after the cap and the base substrate have been bonded. A chip-scale package (CSP) is generally defined as a chip package in which the total package size is no more than approximately 20% greater than the size of the circuit device enclosed within the package. As technology is driven toward a higher degree of miniaturization, CSP designs that are sized at or near the 20% guideline have become inadequate in meeting the miniaturization needs of the electronics industry. Therefore, there is a need for a simple microchip package that is more economical and reliable than existing ceramic packages and for a microchip package that is easier to manufacture and smaller than existing package designs.
- Among the several objects of this invention may be noted the provision of an assembly which allows an electromechanical connection of a integrated circuit device to a substrate at ambient temperatures; the provision of such an assembly which allows economical manufacture; the provisions of such an assembly which permits simple testing; the provision of such an assembly which allows easy rework; and the provision of such an assembly that allows easy removal and replacement of the integrated circuit device.
- Further among the several objects of this invention may be noted the provision of a package for protecting an integrated circuit device which is easy to manufacture; the provision of such a package which is small in scale; the provision of such a package which allows reliable electrical and mechanical connection to a substrate; the provision of such a package which provides sufficient protective space for the circuit device; the provision of a package which reduces fabrication steps; and the provision of such a package which allows reconnectable electrical connection with an electronic circuit substrate.
- In general, an assembly of the present invention comprises a substrate and an integrated circuit device adapted to be electrically and mechanically connected to the substrate. A first set of electrical connection pads on the circuit device and on the substrate are adapted to contact one another when the circuit device and the substrate are connected. The set of connection pads comprises at least one first projection on one of the device and on the substrate and at least two second projections on the other of the device and the substrate. Each projection has a respective axial length extending from an external surface of a respective connection pad. The first projection and the second projection are sized and shaped for a close friction fit along their axial lengths when the projections are interdigitated relative to one another thereby to establish an electrical and mechanical connection between the device and the substrate.
- In another aspect of the invention, the assembly comprises a substrate having a plurality of connection pads. Each pad comprises a plurality of spaced apart electrically conductive projections extending from an external surface of the pad and forming an open space therebetween. An integrated circuit device is adapted to be electrically and mechanically connected to the substrate. The device has a plurality of connection pads with each pad comprising at least one electrically conductive projection extending from an external surface of the pad. The electrically conductive projection on the device is adapted for insertion into the open space such that the device and the substrate are held in electrical and mechanical connection by a friction fit between respective projections.
- In another aspect of the present invention, the assembly comprises a substrate and an electrical circuit device adapted to be electrically and mechanically connected to the substrate. A first connection pad on the substrate comprises a first set of two or more electrically conductive connecting elements protruding from an external surface of one pad. Each connecting element of the first set has an axial length generally perpendicular to the substrate. A second connection pad on the circuit device comprises a second set of one or more electrically conductive connecting elements protruding from an external surface of the pad. Each connecting element of the second set has an axial length and is adapted for interdigitation with the connecting elements of the first set of connecting elements. The first and second sets of connecting elements are sized and shaped for a close friction fit along their axial lengths when interdigitated relative to one another thereby to establish an electrical and mechanical connection between the device and the substrate.
- In general, an integrated circuit device package of the present invention comprises an integrated circuit device having an active side with at least one electrical connection pad thereon and an interconnect substrate for mounting the integrated circuit device on an electronic circuit substrate. The interconnect substrate has a first side adapted to mate with the active side of the integrated circuit device to form an enclosed space and a second side adapted for electrical and mechanical connection to the electronic circuit substrate. The interconnect substrate has at least one set of electrical connection pads with each set comprising a first electrical connection pad on the first side of the interconnect substrate adapted for electrical connection to the at least one electrical connection pad on the integrated circuit device and a second electrical connection pad on the second side of the interconnect substrate electrically connected to the first connection pad. The second electrical connection pad on the second side of the interconnect substrate is adapted for electrical and mechanical connection to the electrical circuit substrate.
- In another aspect of the invention, an integrated circuit device package comprises an integrated circuit device having an active side with at least one electrical connection pad thereon. An interconnect substrate for mounting the integrated circuit device on an electronic circuit substrate has a first side adapted to mate with the active side of the integrated circuit device to form an enclosed space and a second side adapted for electrical and mechanical connection to the electronic circuit substrate. The interconnect substrate has at least one set of electrical connection pads, each set comprising a first electrical connection pad on the first side of the interconnect substrate adapted for electrical connection to the at least one electrical connection pad on the integrated circuit device and a second electrical connection pad on the second side of the interconnect substrate electrically connected to the first connection pad. The second electrical connection pad on the second side of the interconnect substrate is adapted for electrical and mechanical connection to the electrical circuit substrate.
- Another aspect of the invention is directed to a process for forming an integrated circuit device scale package. The process comprises the steps of fabricating an integrated circuit device wafer having an active side, and fabricating an interconnect substrate such that the wafer has electrical connection pads on opposite sides thereof and a recessed surface. The integrated circuit device wafer and interconnect substrate wafer are electrically and mechanically connected such that the two wafers form an enclosed space between the active side of the integrated circuit device wafer and the recessed surface of the interconnect substrate wafer. The integrated circuit device wafer and interconnect substrate wafer are diced to form an individual integrated circuit device package.
- In yet another aspect of the invention an interconnect substrate for mounting an integrated circuit device on an electronic circuit substrate comprises a first side adapted to mate with an active side of the integrated circuit device to form an enclosed space and a second side adapted for electrical and mechanical connection to the electronic substrate. A first electrical connection pad on the first side of the interconnect substrate is adapted for electrical connection to the integrated circuit device. A second electrical connection pad on the second side of the interconnect substrate is electrically connected to the first connection pad. The second electrical connection pad on the second side of the interconnect substrate is adapted for electrical and mechanical connection to the electronic circuit substrate.
- Other objects and features will be in part apparent and in part pointed out hereinafter.
-
FIG. 1 is an elevation, partially in section, of a chip module showing an assembly of the present invention; -
FIG. 2 is an exploded perspective of an integrated circuit device and a substrate of the module; -
FIG. 3 is an enlarged perspective of an integrated circuit device electrical connection pad and a substrate electrical connection pad of a first embodiment of the assembly; -
FIG. 4 is a cross-section in theplane including line 4—4 ofFIG. 3 ; -
FIG. 5 is a cross-section in the plane including theline 5—5 ofFIG. 4 ; -
FIG. 6 is a cross-section similar toFIG. 5 but showing the circuit device electrical connection pad and substrate electrical connection pad fully interdigitated; -
FIG. 7 is an enlarged side elevation of the integrated circuit device and substrate of the first embodiment; -
FIG. 8 is an enlarged perspective of an integrated circuit device electrical connection pad of a second embodiment of the present invention; -
FIG. 9 is a cross-section similar toFIG. 4 but showing a third embodiment of the present invention; -
FIG. 10 is an enlarged perspective of an integrated circuit device electrical connection pad and a substrate electrical connection pad of a fourth embodiment of the present invention; -
FIG. 11 is a cross-section in theplane including line 11—11 ofFIG. 7 ; -
FIG. 12 is an elevation of a integrated circuit device package of the present invention attached to a electronic circuit substrate; -
FIG. 13 is an cross-section of the package ofFIG. 12 removed from the electronic circuit substrate; -
FIG. 14 is an exploded elevation of the package removed from the electronic circuit substrate; -
FIG. 15 is an enlarged fragmentary view of an integrated circuit device and an interconnect substrate, partially in section, of a first embodiment of the package; -
FIG. 16 is an enlarged fragmentary view of an integrated circuit device and an interconnect substrate, partially in section, of a second embodiment of the package; -
FIG. 17 is an enlarged fragmentary view of an integrated circuit device and an interconnect substrate, partially in section, of a third embodiment of the package; -
FIG. 18 is a cross-section similar toFIG. 13 but showing a fourth embodiment of the package; -
FIG. 19 is a perspective of an integrated circuit device wafer and a interconnect substrate wafer as used in a process for forming an integrated circuit device package of the present invention; -
FIG. 19A is an enlarged side elevation of the integrated circuit device wafer; -
FIG. 19B is an enlarged side elevation of the interconnect substrate wafer; -
FIG. 20 is a perspective of an integrated circuit device wafer and interconnect substrate wafer connected in accordance with a process of this invention; and -
FIG. 21 is a perspective of integrated circuit device packages fabricated according to the process. - Corresponding parts are designated by corresponding reference numbers throughout the drawings.
- Referring now to the drawings, and more particularly to
FIG. 1 , a chip module, generally designated 1, comprises an integrated circuit device, generally designated 3, assembled in accordance with the present invention. In the particular embodiment ofFIG. 1 , the module 1 is affixed to a conventionalball grid array 5 having solder balls 9 for electrical connection to a printed circuit board (not shown). It will be understood that the chip module 1 could be directly attached to the circuit board or could be attached via other conventional connecting substrates (e.g., a pin-grid array or a land grid array). Also, the module 1 could include more than oneintegrated circuit device 3 assembled in accordance with the present invention. - As shown in
FIGS. 1 and 2 , theintegrated circuit device 3 of the module 1 is electrically and mechanically attached to a chip carrier substrate generally designated 13. In the illustrated embodiments, thecircuit device 3 is shown schematically but it will be understood that each device could comprise any typical integrated circuit device such as a Micro-Electronic Mechanical Systems (MEMS) device, Optoelectronic (OE) device or any other microchip that may be used in an electronic circuit. The module 1 shown inFIG. 1 includes aprotective cap 15 made from conventional materials (i.e., metal, ceramic, or plastic) that is affixed to thechip carrier substrate 13 by conventional means (i.e., welding, soldering, brazing) to enclose and protect theintegrated circuit device 3. Alternatively, thecap 15 of the module 1 could have an access window (not shown) to allow light to pass through the cap, or the module could be supplied without a cap. - A seen in
FIGS. 1 and 2 , theintegrated circuit device 3 has fourstops 19 integral with the device that project from the bottom surface of the device to contact thesubstrate 13. In one embodiment eachstop 19 is a solid cylindrical body fabricated as part of the chip fabrication process from the same semiconductor material as thecircuit device 3 and located near a respective corner of the circuit device. As will be discussed below in more detail, thestops 19 limit the spacing of thechip 3 relative to thesubstrate 13 and also assure that the chip and substrate are aligned in parallel planes. - In the embodiment of
FIG. 2 , the module 1 has eight sets of electrical connection pads (i.e., bond pads) 23 on theintegrated circuit device 3 for mating with correspondingelectrical connection pads 27 and on thesubstrate 13. Eachconnection pad 23 on thecircuit device 3 is a metal pad fabricated on the surface of the device and arranged to contact acorresponding pad 27 on an opposing surface of thechip carrier substrate 13. Eachelectrical connection pad microchip 3, or thesubstrate 13, so that electrical signals can be received and transmitted through the pads. In the illustrated embodiment theconnection pads 23 are located near the periphery of the bottom (passive)side 31 of thedevice 3 but it will be understood that the pads could be located on the top (active)side 33 of the chip. Also, more or less than eightpads connection pads chip 3 and thesubstrate 13 will vary depending on the specific technology and application of the integrated circuit device and that hundreds or thousands of external connection terminals may exist on the microchip and the substrate. Eachconnection pad 23 is located for attachment to a corresponding (mating)connection pad 27 on thesubstrate 13 so that an electrically conductive path is provided between the integrated circuit device and the substrate. As will be discussed below in more detail, each pair ofmating connection pads chip 3 and thesubstrate 13 includes cooperating connectingelements 37, 39 (FIG. 3 ) that are capable of electrically and mechanically connecting the integrated circuit device to the chip carrier substrate. - As shown in
FIG. 3 , eachelectrical connection pad 23 on theintegrated circuit device 3 has anexternal surface 43 generally parallel with the device and comprises at least one, and probably more than one, electrically conductive connectingelement 37, each of which comprises a first projection protruding from the flat external surface of the pad. In the embodiment ofFIGS. 3 and 4 , eachfirst projection 37 comprises a solid cylindrical body having a flat, circularfree end 51 and anexternal surface 53 with an axial length generally perpendicular to the flatexternal surface 43 of theconnection pad 23. It will be understood that theprojections 37 may have other shapes and configurations without departing from the scope of this invention. In one embodiment, eachprojection 37 is fabricated as an integral part of theconnection pad 23 and comprises any suitable metal or metal alloy (e.g., copper or copper alloys). Preferably, each connectingelement 37 comprises a projection made from the same semi-conductor material as the microchip device 3 (e.g., silicon, ceramic, or any other suitable semi-conductor material) by using conventional fabrication processes such as microelectronic photolithographic techniques (i.e., LIGA processes or surface micromachining and etching) prior to metallizing theconnection pad 23. After fabrication of themicrochip device 3, theprojections 37 and surrounding area on thebottom side 31 of the device are metallized by conventional processes such as vacuum metal deposition, electroless plating, or electrolytic plating to form the electrically conductivechip connection pad 23 that comprises the metallized projections and the flatexternal surface 43 surrounding the projections. Alternatively, eachprojection 37 may be made of solid metal fabricated from conventional microfabrication processes such as electroplating, sputtering, or LIGA that are well suited for making three-dimensional metal projections bonded to theflat surface 43 of the integrated circuitdevice connection pad 23. This alternative method of fabrication results inmetal projections 37 bonded to theconnection pad 23 after the conventional chip fabrication steps have been completed. - Referring again to
FIG. 3 , eachelectrical connection pad 27 on thesubstrate 13 comprises a plurality of spaced apart electrically conductive connectingelements 39, each of which comprises a second projection extending from a flatexternal surface 61 of the pad that is substantially parallel with the substrate. As seen inFIGS. 3 and 4 , eachsecond projection 39 comprises a solid cylindrical body having a flat, circularfree end 67 and anexternal surface 69 with an axial length generally perpendicular to the flatexternal surface 61 of theconnection pad 27. Preferably, eachsecond projection 39 is constructed similar to thefirst projections 37 on thecircuit device 3 and may be made from conventional semiconductor material that is metallized to have an electrically conductiveexternal surface 69. It will be understood that theprojections 39 on thesubstrate connection pads 27 may be fabricated from the same materials using the same manufacturing processes as described above for thefirst projections 37 on theintegrated circuit device 3. Also, thesecond projections 39 may have other shapes and configurations without departing from the scope of this invention. - As seen in
FIGS. 3-6 , thefirst projections 37 on theintegrated circuit device 3 andsecond projections 39 on thesubstrate 13 are adapted for interdigitation to form an electrical and mechanical connection between the device and the substrate. More specifically, the first andsecond projections circuit device 3 is mounted to thesubstrate 13. In one embodiment, a grouping of foursecond projections 39 is spaced apart to form an open space to receive afirst projection 37 such that the externalaxial surface 53 of the first projection contacts the externalaxial surface 61 of each of the four second projections. Alternatively, thesecond projections 39 could be otherwise located such that more or less than four projections contact theexternal surface 53 of eachfirst projection 37. The contact of the externalaxial surface 53 of eachfirst projection 37 and the externalaxial surface 69 of each surroundingsecond projection 39 creates a friction fit providing a mechanical connection force that resists separation of thedevice 3 and thesubstrate 13. It will be understood that the device and the substrate, 3 and 13 respectively, may also be held in contact by surface attractive forces (e.g., stiction forces) that are common in microchip connections. Also, if theprojections device 3 orsubstrate 13 by several degrees of arc to facilitate insertion of the projections. The friction, surface attraction, and/or mechanical forces created by the interdigitation of the first and thesecond projections integrated circuit device 3 in a fixed position relative to thesubstrate 13 without the need for the application of adhesives or solders to theconnection pads integrated circuit device 3 andsubstrate 13 in electromechanical connection is small enough so that the device may be removed, replaced and repositioned on the substrate without the need for extensive rework of theconnection pads device 3 may be mounted on thesubstrate 13 by interdigitation of the first andsecond projections - As shown in
FIG. 6 , theintegrated circuit device 3 may be attached to thesubstrate 13 such that thefirst projections 37 on the device and thesecond projections 39 on the substrate are fully interdigitated (i.e., at least one of the free ends 51, 67 of respective projections contacts theflat surface respective connection pads 23, 27). Full insertion of eachfirst projection 37 into the open space between respective adjacentsecond projections 39 provides an increased contact area between the projections and the highest amount of mechanical connection force holding thechip 3 on thesubstrate 13. - Alternatively, the
device 3 may be an optoelectronic or optical-MEMS device that requires vertical alignment for the transfer of light between adjacent devices. As shown inFIGS. 2 and 7 , thestops 19 may be located at the four corners of thecircuit device 3 to contact thesubstrate 13 so that the integrated circuit device is held at a desired distance D apart from the substrate. The stops 19 that extend from the circuit device near a respective corner of the device contact thesubstrate 13 so that the device and the substrate are parallel relative to one another upon interdigitation of theprojections identical stops 19 to align the circuit devices at the same height so that optical signals (i.e., light) may be transferred between the devices. Also, thestops 19 reduce the amount of overlap between projections, reducing the amount of respective axial length of each projection is in electrical and mechanical contact. The amount of overlapping axial length of respective projections that is required for a particular integrated circuit varies depending on the size and electrical circuit requirements of the integrated circuit device. Typically, the amount of overlap can be in the range of 25% to 100% of the axial length of the projections. - In one exemplary embodiment, each
bond pad 23 on thedevice 3 and eachpad 27 on thesubstrate 13 may have a length of about 100 microns and a width of about 100 microns. Eachfirst projection 37 andsecond projection 39 may have a minimum length of approximately 12 microns and a minimum diameter of approximately 1 micron. Eachstop 19 may have a length of approximately 16 microns with a corresponding distance D (FIG. 7 ) between thedevice 3 and thesubstrate 13 of approximately 16 microns and a corresponding overlap of the axial lengths ofinterdigitated projections projections projections first projection 37 could be provided on themicrochip device 3 having a diameter of approximately 100 microns and a length of approximately 12 microns and threesecond projections 39 could be provided on thesubstrate 13 with each projection having a diameter of approximately 30 microns and a length of approximately 12 microns. - It will be understood that the first and
second projections integrated circuit device 3 and thesubstrate 13 together. The number ofprojections interdigitated projections circuit device 3 andths substrate 13. - In operation, an integrated circuit assembly 1 of the present invention is created by electrically and mechanically connecting the
integrated circuit device 3 to thechip carrier substrate 13. Thecircuit device 3 is mechanically and electrically connected to thesubstrate 13 by the interdigitation of at least onefirst projection 37 on the circuit device with at least twosecond projections 39 on the mating substrate. The friction fit between thefirst projections 37 andsecond projections 39 creates a secure electrical and mechanical connection between theintegrated circuit device 3 and thesubstrate 13. Thechip carrier substrate 13 receives electrical signals from a printed circuit board (not shown), or other components of an electronic circuit, that are transferred to theintegrated circuit device 3 through the contact of the electrically conductivefirst projections 37 with the electrically conductivesecond projections 39. Alternatively, the assembly 1 may be configured with thefirst projection 37 on thesubstrate 13 and thesecond projections 39 on theintegrated circuit device 3 so that the electrical and mechanical connection between the device and the substrate is established through the interdigitation of the projections. -
FIG. 8 illustrates a second embodiment of the present invention, generally designated 201, comprising an integrated circuitdevice connection pad 203. Theconnection pad 203 of this embodiment is substantially similar to theconnection pad 23 of the first embodiment except the pad of this embodiment includesfirst projections 207. Eachfirst projection 207 of the integrated circuitdevice connection pad 203 has a solid frustrum-shaped body of circular cross section with a rounded free end ortip 215 and a taperedexterior surface 217 that increases in diameter from the free end to the base of the projection. Eachfirst projection 207 may be made from metal or other conductive materials as in the first embodiment and may be configured for interdigitation with cylindrical second projections 39 (FIG. 5 ) on thesubstrate 13. Alternatively, thefirst projections 207 may mate with second projections on the substrate that are similar in construction as the first projections or with second projections having other shapes and configurations without departing from the scope of this invention. It will be understood that therounded tip 215 of eachprojection 207 allows quick and easy location (i.e., guiding) of the first projection between respective second projections 39 (FIG. 8 ) on thesubstrate 13. The taperedexternal surface 217 of eachfirst projections 207 allows for a tighter friction fit with thesecond projections 39 and results in a mechanical holding force that increases upon further insertion of thedevice 3 toward thesubstrate 13. Thisembodiment 201 may be particularly useful in applications requiring a more durable and shock resistant electrical connection between theintegrated circuit device 3 and thesubstrate 13. -
FIG. 9 illustrate a cross-section of a third embodiment of the present invention, generally designated 301. Thisembodiment 301 is substantially similar to the first embodiment but thefirst projections 305 on the circuit device and thesecond projections 307 on thesubstrate 13 have elliptical or oval cross-sections. In one embodiment, each ellipticalfirst projection 305 is larger than the ellipticalsecond projection 307 of this embodiment, but the first and second projections could have other sizes or could be otherwise arranged without departing from the scope of this invention. It will be understood that the first andsecond projections -
FIGS. 10 and 11 illustrate a fourth embodiment of the present invention, generally designated 401, comprisingconnection pads 403 on the integrated circuit device 3 (FIG. 1 ) andconnection pads 405 on the substrate 13 (FIG. 1 ) similar to the previous embodiments. Eachconnection pad 403 on thecircuit device 3 hasfirst projections 409, and eachconnection pad 405 on thesubstrate 13 hassecond projections 413. Eachprojection FIGS. 10 and 11 , each first andsecond projection electrical connection pad second projections device 3 and thesubstrate 13. It will be understood that the first andsecond projections - Referring now to
FIGS. 12 and 13 , a integrated circuit device package, generally designated 701, comprises anintegrated circuit device 703 mounted on ainterconnect substrate 707. As shown inFIG. 12 , thepackage 701 is electrically and mechanically connected to an electronic circuit substrate 711 (e.g., printed circuit board, ball-grid array, or land-grid array) by electrical conductive connectingelements 715 on theinterconnect substrate 707. In one embodiment, the electrically conductive connectingelements 715 are placed into electrical contact with electrically conductive connectingelements 717 on theelectronic circuit substrate 711 so that electrical signals can be passed to the integratedcircuit device package 701. Theintegrated circuit device 703 is shown schematically but it will be understood that the circuit device could comprise any typical circuit device having anactive side 719 requiring a protected, enclosed space (e.g., a MEMS device or an OE device). Theintegrated circuit device 703 haselectrical connection pads 723 spaced in from the periphery of the circuit device and constructed similar to thepads 23 described above for theintegrated circuit device 3 shown inFIGS. 1 and 2 . Theconnection pads 723 on thecircuit device 703 shown inFIG. 12 are located on theactive side 719 of the chip which typically has moving parts (not shown) that are actuated by the electrical signals received from theelectronic circuit substrate 711. - Typically, the
interconnect substrate 707 is made using the same chip fabrication processes and the same semiconductor material (e.g., silicon) as thecircuit device 703. Alternatively, the interconnect substrate could have a window (not shown) or could comprise translucent material to allow light to pass through the interconnect substrate and reach anoptical MEMS device 703. Theinterconnect substrate 707 has afirst side 741 adapted for contact with theactive side 719 of theintegrated circuit device 703 and asecond side 745 adapted for electrical connection with theelectronic circuit substrate 711. As best seen inFIGS. 14 and 15 , theinterconnect substrate 707 has multiple sets of electrical connection pads, each set comprising afirst pad 749 on the first side of the substrate and asecond pad 753 on the second side of the substrate. Eachelectrical connection pad interconnect substrate 707. As best seen inFIG. 13 , theconnections pads interconnect substrate 707 are electrically connected by a metallized via 759 passing though the interconnect substrate. Theconnection pads 749 on theinterconnect substrate 707 are arranged to contact acorresponding pad 723 on theactive side 719 of theintegrated circuit device 703, and thepads 753 on thesecond side 745 of the interconnect substrate are adapted for connection with theelectrical connection pads 717 ofelectronic circuit substrate 711. - In one embodiment, the electrically conductive connecting
elements 715 on theinterconnect substrate 707 comprise electrically conductive connecting projections similar to the connectingelements 37 described above for theintegrated circuit device 3 ofFIG. 1 . Eachprojection 715 may be a metallized projection formed integral with theelectrical connection pad 753 or may be a metal projection bonded to the connection pad by a conventional manufacturing process. As seen inFIGS. 12 and 14 , the spaced apart electrically conductive connectingelements 717 comprise projections similar to the connectingelements 39 described above for the earlier embodiments. Theprojections 715 on theinterconnect substrate 707 and theprojections 717 on theelectronic circuit substrate 711 are adapted for interdigitation to form an electrical and mechanical connection between the chip-scale package 701 and the electronic circuit substrate. It will be understood that theprojections 715 on theinterconnect substrate 707 and theprojections 717 on theelectronic circuit substrate 711 can comprise any of the embodiments of the electrically conductive connecting elements discussed above or any other connecting elements commonly used to connect an integrated circuit device to an electronic circuit substrate. - As best seen in
FIGS. 14 and 15 , thefirst side 741 of theinterconnect substrate 707 has anouter rim 773 along the peripheral edge of the interconnect substrate for sealing contact with theactive side 719 of thecircuit device 703. It will be understood that theinterconnect substrate 707 and theintegrated circuit device 703 may be bonded by any conventional wafer bonding method commonly used in the semiconductor industry (e.g., adhesive bonding, fusion bonding, or anodic bonding). Thefirst side 741 of theinterconnect substrate 707 has ashoulder 777 adjacent theouter rim 773 that supports eachelectrical connection pad 749 that mates with the correspondingelectrical connection pad 723 of theintegrated circuit device 703. In the embodiment ofFIG. 15 , eachelectrical connection pad 749 on thefirst side 741 of theinterconnect substrate 707 has a planar contact surface for mating with a planar contact surface of a respectiveelectrical connection pad 723 on theintegrated circuit device 703. Theinterconnect substrate 707 has arecess 781 adjacent theshoulder 777 that forms the enclosed space of the package when theouter rim 773 is in contact with theactive side 719 of theintegrated circuit device 703. In the illustrated embodiment, therecess 781 is located on theinterconnect substrate 707 and comprises approximately 60% to 75% of the surface area of the interconnect substrate. It will be understood that there could be more than onerecess 781 of varying sizes on theinterconnect substrate 707. Also, theintegrated circuit 703 device could be configured to have anactive side 719 that comprises a recess similar to therecess 781 so that the first side 791 of theinterconnect substrate 707 is substantially planar. -
FIG. 16 shows a second embodiment of the integrated circuit device package, generally indicated 801. Thisembodiment 801 is substantially similar to the first embodiment of thepackage 701 except theelectrical connection pads 805 on thefirst surface 741 of theinterconnect substrate 707 comprise pointed projections orteeth 809 that contact theelectrical connection pads 723 on theintegrated circuit device 703. When thecircuit device 703 is bonded to theinterconnect substrate 707, the pointedprojections 809 embed into theelectrical connection pads 723 on the integrated circuit device to provide an additional mechanical force holding the integrated circuit device in electrical connection with theinterconnect substrate 707. It will be understood that theprojections 809 may have different sizes and shapes (e.g. cylindrical projections with blunt ends) without departing from the scope of this invention. -
FIG. 17 shows a third embodiment of the integrated circuit device package, generally indicated 831. Thisembodiment 831 is substantially similar to the first embodiment of thepackage 701 except that theelectrical connection pads 835 on thefirst side 741 of theinterconnect substrate 707 comprise one or more electricallyconductive springs 839 that extend from the connection pads. Thesprings 839 allow for electrical conduction between theintegrated circuit device 703 and theinterconnect substrate 707 when the circuit device is slightly misaligned so that the planar surface of theelectrical connection pads 835 on theinterconnect substrate 707 are slightly out of parallel with the planar surface of theelectrical connection pads 723 on the circuit device. Preferably, thesprings 839 are made integral withconnection pads 835 from conventional spring metal materials (e.g., Molybdenum and Chromium) by using conventional fabrication techniques. Reference may be made to U.S. Pat. Nos. 6,560,851 and 5,613,861, incorporated by reference herein for all purposes, for conventional microspring materials and fabrication processes. -
FIG. 18 illustrates a fourth embodiment of the integrated circuit device package, generally designated 851. Thisembodiment 851 is substantially similar to the first embodiment of thepackage 701 but includes aninterconnect substrate 855 with electrically conductive connecting elements that comprisesolder balls 859 rather than electrically conductive projections 715 (FIG. 12 ). Thepackage 851 may be mounted by conventional means directly on electrically conductive connection pads (not shown) of theelectronic circuit substrate 711 by placing thepackage 851 on the substrate and heating the package to reflow thesolder balls 859. Alternatively, the electrically conductive connectingelements 859 of this embodiment could also comprise other materials such as conductive adhesives that can be used to electrically and mechanically attach the integratedcircuit device package 851 to theelectronic circuit substrate 711. - Referring to
FIGS. 19-21 , the integratedcircuit device package 701 shown inFIGS. 12-18 can be formed by a wafer level fabrication process that results in a plurality of individual integrated circuit device packages. The process comprises fabricating an integratedcircuit device wafer 871 having a plurality ofintegrated circuit devices 703 that each have anactive side 719 and a plurality ofelectrical connection pads 723 on the active side. As shown inFIG. 19B , aninterconnect substrate wafer 875 is fabricated to have a plurality of surfaces corresponding with theouter rim 773,shoulder 777 andrecess 781 described above for each individual integratedcircuit device package 701. Theinterconnect substrate wafer 875 has a plurality ofelectrical connection pads 749 fabricated on theshoulders 777 of thefirst side 741 of the substrate and a plurality of electrically conductive connectingelements 715 fabricated on thesecond side 745 of the wafer. It will be understood that the electrically conductive connecting elements may 715 be formed from any of the methods set forth above for electrically conductive connectingelements 37 on theintegrated circuit device 3. Also, thewafers FIG. 20 , thecircuit device wafer 871 and theinterconnect substrate wafer 875 are bonded together by conventional bonding methods such that theouter rims 773 projecting from thefirst side 741 of theinterconnect substrate wafer 875 are placed in sealing contact with theactive side 719 of the integratedcircuit device wafer 871. Also, thewafers electrical connection pads wafers wafers cut lines 879 which pass through rim formations on the interconnect substrate wafer corresponding to theouter rim 773 of thewafer 875 in contact with the integratedcircuit device wafer 871. Preferably, thecut lines 879 are through the centers of these rim formations. The diced wafers result in individual integrated circuit device packages 701 (FIG. 21 ) having electricalconductive connection elements 715 that are ready for direct electrical and mechanical connection to anelectronic circuit substrate 711 without requiring additional processing. - The
package 701 of the present invention is a chip scale package (CSP) that approximates the size of theintegrated circuit device 703 and requires only a very small amount of additional circuit board mounting area when compared to the bare chip mounted to the board by direct chip attachment. It will be understood that thepackage 701 will occupy a board mounting area larger than the bareintegrated circuit device 703 by an amount approximately equal to the width of theouter rim 773 of theinterconnect substrate 707. Preferably, thepackage 701 may have a board mounting area of approximately 1-20% larger than the mounting area of the bareintegrated circuit device 703; more preferably the board mounting area of the package may be approximately 1-10% larger than the board mounting area of the bare integrated circuit device; and most preferably the board mounting area of the package may be approximately 1% larger than the board mounting area of the bare integrated circuit device. - In view of the above, it will be seen that the several objects of the invention are achieved and other advantageous results attained. The friction fit between the
first projections 37 andsecond projections 39 of the chip module 1 allow for assembly and attachment of theintegrated circuit device 3 to thesubstrate 13 without the application of heat and the resulting thermal stresses. Thefirst projections 37 andsecond projections 39 on thecircuit device 3 andsubstrate 13 are configured for interdigitation to allow the device to be easily removed from the substrate after testing and reconnected to the substrate without extensive rework. Also, the friction fit between the first andsecond projections integrated circuit device 3 in a final assembly. The first andsecond projections circuit device package 701 can be manufactured from a simple wafer level process that does not require additional processing for electrical connections from the package to thecircuit board 711. The integratedcircuit device package 701 provides an enclosed space to protect theintegrated circuit device 703 and minimizes circuit board mounting area. The electrically conductive connectingelements circuit device package electronic substrate 711. - As various changes could be made in the above constructions without departing from the scope of the invention, it is intended that all matter contained in the above description or shown in the accompanying drawings shall be interpreted as illustrative and not in a limiting sense. For example, the first and
second projections integrated circuit device 3 in electrical and mechanical contact with thesubstrate 13. Also, the first and/orsecond projections electrical connection pad integrated circuit device 3 or thesubstrate 13. Furthermore, the first and/orsecond projections electrical connection pad - When introducing elements of the present invention or the preferred embodiment(s) thereof, the articles “a”, “an”, “the” and “said” are intended to mean that there are one or more of the elements. The terms “comprising”, “including” and “having” are intended to be inclusive and mean that there may be additional elements other than the listed elements.
Claims (29)
1. An assembly comprising:
a substrate,
an integrated circuit device adapted to be electrically and mechanically connected to the substrate,
electrical connection pads on the integrated circuit device and on the substrate adapted to contact one another when the circuit device and the substrate are connected,
said connection pads comprising at least one first projection on one of the device and the substrate and at least two second projections on the other of the device and the substrate, each projection having a respective axial length extending from an external surface of a respective connection pad,
the at least one first projection and at least two second projections having respective external surfaces that are sized and shaped for a close friction fit along their axial lengths when interdigitated relative to one another thereby to create an axial contact area between respective projections to establish an electrical and mechanical connection between the device and the substrate.
2. An assembly as set forth in claim 1 wherein said at least one first projection is on the integrated circuit device and said at least two second projections are on the substrate.
3. An assembly as set forth in claim 1 wherein said at least one first projection comprises a headless projection.
4. An assembly as set forth in claim 1 wherein said at least one first projection comprises a solid cylindrical body.
5. An assembly as set forth in claim 1 wherein said at least one first projection is substantially rigid.
6. An assembly as set forth in claim 4 wherein said body is formed integral with said one of the circuit device or substrate.
7. An assembly as set forth in claim 6 wherein said body comprises a metal external surface for contacting said at least two second projections.
8. An assembly as set forth in claim 4 wherein said at least two second projections comprise solid cylindrical bodies and are spaced apart to form an open space for receiving said at least one first projection.
9. An assembly as set forth in claim 8 wherein said solid cylindrical bodies of the first and second projections are substantially rigid.
10. An assembly as set forth in claim 8 wherein said second projections have metal external surfaces for contact with said body of the at least one first projection.
11. An assembly as set forth in claim 1 wherein said at least one first projection comprises a frustum-shaped body.
12. An assembly as set forth in claim 1 wherein said at least one first projection and said at least two second projections have elliptical cross-sections.
13. An assembly as set forth in claim 1 wherein said at least one first projection and said plurality of second projections have polygonal cross-sections.
14. An assembly as set forth in claim 1 wherein said integrated circuit device is a MEMS device.
15. An assembly as set forth in claim 1 wherein said integrated circuit device is an optical MEMS device.
16. An assembly as set forth in claim 1 wherein said substrate is a chip carrier platform.
17. An assembly as set forth in claim 1 wherein said substrate is a circuit board.
18. An assembly comprising:
a substrate having a plurality of connection pads, each pad comprising a plurality of spaced apart electrically conductive substrate projections extending from an external surface of the pads and forming an open space therebetween, each substrate projection having a respective axial length,
an integrated circuit device adapted to be electrically and mechanically connected to the substrate, said device having a plurality of connection pads, each pad comprising at least one electrically conductive device projection extending from an external surface of the pad, each device projection having a respective axial length and being adapted for insertion into said open space such that the device and the substrate are held in electrical and mechanical connection by a friction fit between respective axial lengths of the substrate and device projections.
19. An assembly as set forth in claim 18 wherein at least one of said substrate and device projections comprises a solid cylindrical body having a metal external surface.
20. An assembly as set forth in claim 18 wherein at least one of said substrate and device projections comprises a frustum-shaped body.
21. An assembly as set forth in claim 20 wherein said frustum-shaped body comprises a head portion adapted for insertion into said open space between substrate projections.
22. An assembly as set forth in claim 18 wherein at least one of said substrate and device projections has an elliptical cross-section.
23. An assembly as set forth in claim 18 wherein at least one of said substrate and device projections has a polygonal cross-section.
24. An assembly comprising:
a substrate,
an electrical circuit device adapted to be electrically and mechanically connected to the substrate,
a first connection pad on the substrate comprising a first set of two or more electrically conductive connecting elements protruding from an external surface of one pad, each connecting element of the first set having an axial length generally perpendicular to the substrate,
a second connection pad on the circuit device comprising a second set of one or more electrically conductive connecting elements protruding from an external surface of the pad and adapted for interdigitation with the connecting elements of the first set of connecting elements, each connecting element of the second set having an axial length, said first and second sets of connecting elements having
respective external surfaces that are sized and shaped for a close friction fit along their axial lengths when interdigitated relative to one another thereby to create an axial contact area between respective projections to establish an electrical and mechanical connection between said device and the substrate.
25. An assembly as set forth in claim 24 wherein said second set of electrically conductive connecting elements comprises a solid cylindrical body having a metal external surface.
26. An assembly as set forth in claim 24 wherein said second set of electrically conductive connecting elements comprises a frustum-shaped body extending from the second connection pad.
27. An assembly as set forth in claim 24 wherein said second set of electrically conductive connecting elements have elliptical cross-sections.
28. An assembly as set forth in claim 24 wherein said second set of electrically conductive connecting elements have polygonal cross-sections.
29-58. (Cancelled)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/621,773 US20050012212A1 (en) | 2003-07-17 | 2003-07-17 | Reconnectable chip interface and chip package |
US10/853,696 US20050012191A1 (en) | 2003-07-17 | 2004-05-25 | Reconnectable chip interface and chip package |
KR1020040055537A KR20050009235A (en) | 2003-07-17 | 2004-07-16 | A reconnectable chip interface and chip package |
EP04016793A EP1498948A3 (en) | 2003-07-17 | 2004-07-16 | A reconnectable chip interface and chip package |
JP2004210546A JP2005051239A (en) | 2003-07-17 | 2004-07-16 | Reconnectable chip interface and chip package |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/621,773 US20050012212A1 (en) | 2003-07-17 | 2003-07-17 | Reconnectable chip interface and chip package |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/853,696 Division US20050012191A1 (en) | 2003-07-17 | 2004-05-25 | Reconnectable chip interface and chip package |
Publications (1)
Publication Number | Publication Date |
---|---|
US20050012212A1 true US20050012212A1 (en) | 2005-01-20 |
Family
ID=33477118
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/621,773 Abandoned US20050012212A1 (en) | 2003-07-17 | 2003-07-17 | Reconnectable chip interface and chip package |
US10/853,696 Abandoned US20050012191A1 (en) | 2003-07-17 | 2004-05-25 | Reconnectable chip interface and chip package |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/853,696 Abandoned US20050012191A1 (en) | 2003-07-17 | 2004-05-25 | Reconnectable chip interface and chip package |
Country Status (4)
Country | Link |
---|---|
US (2) | US20050012212A1 (en) |
EP (1) | EP1498948A3 (en) |
JP (1) | JP2005051239A (en) |
KR (1) | KR20050009235A (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070102805A1 (en) * | 2005-11-04 | 2007-05-10 | Samsung Electronics Co., Ltd | Chip type electric device and method, and display device including the same |
US20090001593A1 (en) * | 2007-06-27 | 2009-01-01 | Byung Tai Do | Integrated circuit package system with overhanging connection stack |
US20090127704A1 (en) * | 2007-11-20 | 2009-05-21 | Fujitsu Limited | Method and System for Providing a Reliable Semiconductor Assembly |
US20110012270A1 (en) * | 2007-06-21 | 2011-01-20 | Frederick Rodriguez Dahilig | Integrated circuit package system employing device stacking and method of manufacture thereof |
US20110147899A1 (en) * | 2007-06-21 | 2011-06-23 | Frederick Rodriguez Dahilig | Integrated circuit package system employing device stacking |
US20140210074A1 (en) * | 2013-01-29 | 2014-07-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor Devices, Methods of Manufacture Thereof, and Semiconductor Device Packages |
US20150003023A1 (en) * | 2013-06-26 | 2015-01-01 | Fujitsu Component Limited | Electronic component module, board, and method of manufacturing electronic component module |
US20160172326A1 (en) * | 2013-06-27 | 2016-06-16 | Tsinghua University | Bonding method and bonding structure formed using the same |
US11289443B2 (en) * | 2017-04-20 | 2022-03-29 | Palo Alto Research Center Incorporated | Microspring structure for hardware trusted platform module |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7135771B1 (en) * | 2005-06-23 | 2006-11-14 | Intel Corporation | Self alignment features for an electronic assembly |
KR100802638B1 (en) | 2006-10-30 | 2008-02-13 | 백미자 | Bicycle without seat |
JP5304536B2 (en) | 2009-08-24 | 2013-10-02 | ソニー株式会社 | Semiconductor device |
KR100966114B1 (en) | 2009-10-09 | 2010-06-28 | (주) 뉴캐어메디컬시스템 | Thyroid uptake measurement apparatus |
US8576029B2 (en) * | 2010-06-17 | 2013-11-05 | General Electric Company | MEMS switching array having a substrate arranged to conduct switching current |
WO2019152095A1 (en) * | 2018-02-01 | 2019-08-08 | Hrl Laboratories, Llc | Integrated circuit with metallic interlocking structure |
CN113345879B (en) * | 2021-05-31 | 2022-07-12 | Tcl华星光电技术有限公司 | Miniature LED display panel |
Citations (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3005282A (en) * | 1958-01-28 | 1961-10-24 | Interlego Ag | Toy building brick |
US3526867A (en) * | 1967-07-17 | 1970-09-01 | Keeler Brass Co | Interlocking electrical connector |
US3585569A (en) * | 1969-09-02 | 1971-06-15 | Gen Electric | Electrical contact closure |
US3825878A (en) * | 1973-09-10 | 1974-07-23 | Motorola Inc | Flexible flat cable system |
US3825876A (en) * | 1971-08-12 | 1974-07-23 | Augat Inc | Electrical component mounting |
US4526429A (en) * | 1983-07-26 | 1985-07-02 | Augat Inc. | Compliant pin for solderless termination to a printed wiring board |
US4556393A (en) * | 1983-02-14 | 1985-12-03 | Interlego Ag | Toy building block with electrical contacts |
US4601526A (en) * | 1983-10-28 | 1986-07-22 | Honeywell Inc. | Integrated circuit chip carrier |
US4657336A (en) * | 1985-12-18 | 1987-04-14 | Gte Products Corporation | Socket receptacle including overstress protection means for mounting electrical devices on printed circuit boards |
US4744780A (en) * | 1986-02-06 | 1988-05-17 | Tyco Industries, Inc. | Adapter block |
US4746300A (en) * | 1985-06-10 | 1988-05-24 | Gilles Thevenin | Mounting panel for removable elements |
US4818728A (en) * | 1986-12-03 | 1989-04-04 | Sharp Kabushiki Kaisha | Method of making a hybrid semiconductor device |
US4950173A (en) * | 1983-06-15 | 1990-08-21 | Hitachi, Ltd. | Service temperature connector and packaging structure of semiconductor device employing the same |
US5059130A (en) * | 1988-06-23 | 1991-10-22 | Ltv Aerospace And Defense Company | Minimal space printed cicuit board and electrical connector system |
US5110298A (en) * | 1990-07-26 | 1992-05-05 | Motorola, Inc. | Solderless interconnect |
US5120678A (en) * | 1990-11-05 | 1992-06-09 | Motorola Inc. | Electrical component package comprising polymer-reinforced solder bump interconnection |
US5299939A (en) * | 1992-03-05 | 1994-04-05 | International Business Machines Corporation | Spring array connector |
US5312456A (en) * | 1991-01-31 | 1994-05-17 | Carnegie Mellon University | Micromechanical barb and method for making the same |
US5326428A (en) * | 1993-09-03 | 1994-07-05 | Micron Semiconductor, Inc. | Method for testing semiconductor circuitry for operability and method of forming apparatus for testing semiconductor circuitry for operability |
US5411400A (en) * | 1992-09-28 | 1995-05-02 | Motorola, Inc. | Interconnect system for a semiconductor chip and a substrate |
US5439162A (en) * | 1993-06-28 | 1995-08-08 | Motorola, Inc. | Direct chip attachment structure and method |
US5457610A (en) * | 1993-06-01 | 1995-10-10 | Motorola, Inc. | Low profile mechanical interconnect system having metalized loop and hoop area |
US5502889A (en) * | 1988-06-10 | 1996-04-02 | Sheldahl, Inc. | Method for electrically and mechanically connecting at least two conductive layers |
US5561594A (en) * | 1994-01-11 | 1996-10-01 | Sgs-Thomson Microelectronics Ltd. | Circuit connection in an electrical assembly |
US5613861A (en) * | 1995-06-07 | 1997-03-25 | Xerox Corporation | Photolithographically patterned spring contact |
US5665654A (en) * | 1995-02-10 | 1997-09-09 | Micron Display Technology, Inc. | Method for forming an electrical connection to a semiconductor die using loose lead wire bonding |
US5685885A (en) * | 1990-09-24 | 1997-11-11 | Tessera, Inc. | Wafer-scale techniques for fabrication of semiconductor chip assemblies |
US5774341A (en) * | 1995-12-20 | 1998-06-30 | Motorola, Inc. | Solderless electrical interconnection including metallized hook and loop fasteners |
US5895233A (en) * | 1993-12-13 | 1999-04-20 | Honeywell Inc. | Integrated silicon vacuum micropackage for infrared devices |
US5903059A (en) * | 1995-11-21 | 1999-05-11 | International Business Machines Corporation | Microconnectors |
US5915168A (en) * | 1996-08-29 | 1999-06-22 | Harris Corporation | Lid wafer bond packaging and micromachining |
US5981361A (en) * | 1996-09-13 | 1999-11-09 | Fujitsu Limited | Fabrication process of a semiconductor device including a dicing process of a semiconductor wafer |
US6093053A (en) * | 1997-09-25 | 2000-07-25 | Hokuriku Electric Industry Co., Ltd. | Electric component with soldering-less terminal fitment |
US6113728A (en) * | 1989-03-09 | 2000-09-05 | Hitachi Chemical Company, Ltd. | Process for connecting circuits and adhesive film used therefor |
US6159826A (en) * | 1997-12-29 | 2000-12-12 | Hyundai Electronics Industries Co., Ltd. | Semiconductor wafer and fabrication method of a semiconductor chip |
US6179625B1 (en) * | 1999-03-25 | 2001-01-30 | International Business Machines Corporation | Removable interlockable first and second connectors having engaging flexible members and process of making same |
US6200143B1 (en) * | 1998-01-09 | 2001-03-13 | Tessera, Inc. | Low insertion force connector for microelectronic elements |
US6204455B1 (en) * | 1995-07-31 | 2001-03-20 | Tessera, Inc. | Microelectronic component mounting with deformable shell terminals |
US6214644B1 (en) * | 2000-06-30 | 2001-04-10 | Amkor Technology, Inc. | Flip-chip micromachine package fabrication method |
US6228675B1 (en) * | 1999-07-23 | 2001-05-08 | Agilent Technologies, Inc. | Microcap wafer-level package with vias |
US6265776B1 (en) * | 1998-04-27 | 2001-07-24 | Fry's Metals, Inc. | Flip chip with integrated flux and underfill |
US6297072B1 (en) * | 1998-04-17 | 2001-10-02 | Interuniversitair Micro-Elktronica Centrum (Imec Vzw) | Method of fabrication of a microstructure having an internal cavity |
US6320257B1 (en) * | 1994-09-27 | 2001-11-20 | Foster-Miller, Inc. | Chip packaging technique |
US6345991B1 (en) * | 1999-06-09 | 2002-02-12 | Avaya Technology Corp. | Printed wiring board for connecting to pins |
US6352436B1 (en) * | 2000-06-29 | 2002-03-05 | Teradyne, Inc. | Self retained pressure connection |
US6365840B1 (en) * | 1998-08-03 | 2002-04-02 | Sony Corporation | Electrical connecting device and electrical connecting method |
US6396711B1 (en) * | 2000-06-06 | 2002-05-28 | Agere Systems Guardian Corp. | Interconnecting micromechanical devices |
US6439703B1 (en) * | 2000-12-29 | 2002-08-27 | Eastman Kodak Company | CMOS/MEMS integrated ink jet print head with silicon based lateral flow nozzle architecture and method of forming same |
US6441481B1 (en) * | 2000-04-10 | 2002-08-27 | Analog Devices, Inc. | Hermetically sealed microstructure package |
US6448109B1 (en) * | 2000-11-15 | 2002-09-10 | Analog Devices, Inc. | Wafer level method of capping multiple MEMS elements |
US6450839B1 (en) * | 1998-03-03 | 2002-09-17 | Samsung Electronics Co., Ltd. | Socket, circuit board, and sub-circuit board for semiconductor integrated circuit device |
US6560851B1 (en) * | 1997-08-25 | 2003-05-13 | Murata Manufacturing Co., Ltd. | Method for producing an inductor |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1478284A1 (en) * | 1965-06-19 | 1969-03-13 | Lego System As | Process for the production of devices or construction models containing one or more electrical circuits, as well as components for carrying out the process |
DE2552587A1 (en) * | 1975-11-24 | 1977-05-26 | Jens Freese | Interlocking building brick for toy sets - has metallic cover sections to give electrically conducting path |
US5118299A (en) * | 1990-05-07 | 1992-06-02 | International Business Machines Corporation | Cone electrical contact |
US5329423A (en) * | 1993-04-13 | 1994-07-12 | Scholz Kenneth D | Compressive bump-and-socket interconnection scheme for integrated circuits |
US6018249A (en) * | 1997-12-11 | 2000-01-25 | Micron Technolgoy, Inc. | Test system with mechanical alignment for semiconductor chip scale packages and dice |
WO1999065076A1 (en) * | 1998-06-05 | 1999-12-16 | Hitachi, Ltd. | Semiconductor device and method for manufacturing the same |
US6208027B1 (en) * | 1999-03-10 | 2001-03-27 | Advanced Micro Devices, Inc. | Temporary interconnect for semiconductor devices |
US6291884B1 (en) * | 1999-11-09 | 2001-09-18 | Amkor Technology, Inc. | Chip-size semiconductor packages |
KR100370398B1 (en) * | 2000-06-22 | 2003-01-30 | 삼성전자 주식회사 | Method for surface mountable chip scale packaging of electronic and MEMS devices |
-
2003
- 2003-07-17 US US10/621,773 patent/US20050012212A1/en not_active Abandoned
-
2004
- 2004-05-25 US US10/853,696 patent/US20050012191A1/en not_active Abandoned
- 2004-07-16 KR KR1020040055537A patent/KR20050009235A/en not_active Application Discontinuation
- 2004-07-16 JP JP2004210546A patent/JP2005051239A/en active Pending
- 2004-07-16 EP EP04016793A patent/EP1498948A3/en not_active Withdrawn
Patent Citations (53)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3005282A (en) * | 1958-01-28 | 1961-10-24 | Interlego Ag | Toy building brick |
US3526867A (en) * | 1967-07-17 | 1970-09-01 | Keeler Brass Co | Interlocking electrical connector |
US3585569A (en) * | 1969-09-02 | 1971-06-15 | Gen Electric | Electrical contact closure |
US3825876A (en) * | 1971-08-12 | 1974-07-23 | Augat Inc | Electrical component mounting |
US3825878A (en) * | 1973-09-10 | 1974-07-23 | Motorola Inc | Flexible flat cable system |
US4556393A (en) * | 1983-02-14 | 1985-12-03 | Interlego Ag | Toy building block with electrical contacts |
US4950173A (en) * | 1983-06-15 | 1990-08-21 | Hitachi, Ltd. | Service temperature connector and packaging structure of semiconductor device employing the same |
US4526429A (en) * | 1983-07-26 | 1985-07-02 | Augat Inc. | Compliant pin for solderless termination to a printed wiring board |
US4601526A (en) * | 1983-10-28 | 1986-07-22 | Honeywell Inc. | Integrated circuit chip carrier |
US4746300A (en) * | 1985-06-10 | 1988-05-24 | Gilles Thevenin | Mounting panel for removable elements |
US4657336A (en) * | 1985-12-18 | 1987-04-14 | Gte Products Corporation | Socket receptacle including overstress protection means for mounting electrical devices on printed circuit boards |
US4744780A (en) * | 1986-02-06 | 1988-05-17 | Tyco Industries, Inc. | Adapter block |
US4818728A (en) * | 1986-12-03 | 1989-04-04 | Sharp Kabushiki Kaisha | Method of making a hybrid semiconductor device |
US5502889A (en) * | 1988-06-10 | 1996-04-02 | Sheldahl, Inc. | Method for electrically and mechanically connecting at least two conductive layers |
US5059130A (en) * | 1988-06-23 | 1991-10-22 | Ltv Aerospace And Defense Company | Minimal space printed cicuit board and electrical connector system |
US6113728A (en) * | 1989-03-09 | 2000-09-05 | Hitachi Chemical Company, Ltd. | Process for connecting circuits and adhesive film used therefor |
US5110298A (en) * | 1990-07-26 | 1992-05-05 | Motorola, Inc. | Solderless interconnect |
US5685885A (en) * | 1990-09-24 | 1997-11-11 | Tessera, Inc. | Wafer-scale techniques for fabrication of semiconductor chip assemblies |
US5120678A (en) * | 1990-11-05 | 1992-06-09 | Motorola Inc. | Electrical component package comprising polymer-reinforced solder bump interconnection |
US5312456A (en) * | 1991-01-31 | 1994-05-17 | Carnegie Mellon University | Micromechanical barb and method for making the same |
US5299939A (en) * | 1992-03-05 | 1994-04-05 | International Business Machines Corporation | Spring array connector |
US5411400A (en) * | 1992-09-28 | 1995-05-02 | Motorola, Inc. | Interconnect system for a semiconductor chip and a substrate |
US5457610A (en) * | 1993-06-01 | 1995-10-10 | Motorola, Inc. | Low profile mechanical interconnect system having metalized loop and hoop area |
US5439162A (en) * | 1993-06-28 | 1995-08-08 | Motorola, Inc. | Direct chip attachment structure and method |
US5326428A (en) * | 1993-09-03 | 1994-07-05 | Micron Semiconductor, Inc. | Method for testing semiconductor circuitry for operability and method of forming apparatus for testing semiconductor circuitry for operability |
US5895233A (en) * | 1993-12-13 | 1999-04-20 | Honeywell Inc. | Integrated silicon vacuum micropackage for infrared devices |
US5561594A (en) * | 1994-01-11 | 1996-10-01 | Sgs-Thomson Microelectronics Ltd. | Circuit connection in an electrical assembly |
US6320257B1 (en) * | 1994-09-27 | 2001-11-20 | Foster-Miller, Inc. | Chip packaging technique |
US5665654A (en) * | 1995-02-10 | 1997-09-09 | Micron Display Technology, Inc. | Method for forming an electrical connection to a semiconductor die using loose lead wire bonding |
US5613861A (en) * | 1995-06-07 | 1997-03-25 | Xerox Corporation | Photolithographically patterned spring contact |
US6204455B1 (en) * | 1995-07-31 | 2001-03-20 | Tessera, Inc. | Microelectronic component mounting with deformable shell terminals |
US5903059A (en) * | 1995-11-21 | 1999-05-11 | International Business Machines Corporation | Microconnectors |
US5774341A (en) * | 1995-12-20 | 1998-06-30 | Motorola, Inc. | Solderless electrical interconnection including metallized hook and loop fasteners |
US5915168A (en) * | 1996-08-29 | 1999-06-22 | Harris Corporation | Lid wafer bond packaging and micromachining |
US5981361A (en) * | 1996-09-13 | 1999-11-09 | Fujitsu Limited | Fabrication process of a semiconductor device including a dicing process of a semiconductor wafer |
US6475881B1 (en) * | 1996-09-13 | 2002-11-05 | Fuji-Su Limited | Fabrication process of a semiconductor device including a dicing process of a semiconductor wafer |
US6560851B1 (en) * | 1997-08-25 | 2003-05-13 | Murata Manufacturing Co., Ltd. | Method for producing an inductor |
US6093053A (en) * | 1997-09-25 | 2000-07-25 | Hokuriku Electric Industry Co., Ltd. | Electric component with soldering-less terminal fitment |
US6159826A (en) * | 1997-12-29 | 2000-12-12 | Hyundai Electronics Industries Co., Ltd. | Semiconductor wafer and fabrication method of a semiconductor chip |
US6200143B1 (en) * | 1998-01-09 | 2001-03-13 | Tessera, Inc. | Low insertion force connector for microelectronic elements |
US6450839B1 (en) * | 1998-03-03 | 2002-09-17 | Samsung Electronics Co., Ltd. | Socket, circuit board, and sub-circuit board for semiconductor integrated circuit device |
US6297072B1 (en) * | 1998-04-17 | 2001-10-02 | Interuniversitair Micro-Elktronica Centrum (Imec Vzw) | Method of fabrication of a microstructure having an internal cavity |
US6265776B1 (en) * | 1998-04-27 | 2001-07-24 | Fry's Metals, Inc. | Flip chip with integrated flux and underfill |
US6365840B1 (en) * | 1998-08-03 | 2002-04-02 | Sony Corporation | Electrical connecting device and electrical connecting method |
US6179625B1 (en) * | 1999-03-25 | 2001-01-30 | International Business Machines Corporation | Removable interlockable first and second connectors having engaging flexible members and process of making same |
US6345991B1 (en) * | 1999-06-09 | 2002-02-12 | Avaya Technology Corp. | Printed wiring board for connecting to pins |
US6228675B1 (en) * | 1999-07-23 | 2001-05-08 | Agilent Technologies, Inc. | Microcap wafer-level package with vias |
US6441481B1 (en) * | 2000-04-10 | 2002-08-27 | Analog Devices, Inc. | Hermetically sealed microstructure package |
US6396711B1 (en) * | 2000-06-06 | 2002-05-28 | Agere Systems Guardian Corp. | Interconnecting micromechanical devices |
US6352436B1 (en) * | 2000-06-29 | 2002-03-05 | Teradyne, Inc. | Self retained pressure connection |
US6214644B1 (en) * | 2000-06-30 | 2001-04-10 | Amkor Technology, Inc. | Flip-chip micromachine package fabrication method |
US6448109B1 (en) * | 2000-11-15 | 2002-09-10 | Analog Devices, Inc. | Wafer level method of capping multiple MEMS elements |
US6439703B1 (en) * | 2000-12-29 | 2002-08-27 | Eastman Kodak Company | CMOS/MEMS integrated ink jet print head with silicon based lateral flow nozzle architecture and method of forming same |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070102805A1 (en) * | 2005-11-04 | 2007-05-10 | Samsung Electronics Co., Ltd | Chip type electric device and method, and display device including the same |
US8174127B2 (en) | 2007-06-21 | 2012-05-08 | Stats Chippac Ltd. | Integrated circuit package system employing device stacking |
US20110012270A1 (en) * | 2007-06-21 | 2011-01-20 | Frederick Rodriguez Dahilig | Integrated circuit package system employing device stacking and method of manufacture thereof |
US20110147899A1 (en) * | 2007-06-21 | 2011-06-23 | Frederick Rodriguez Dahilig | Integrated circuit package system employing device stacking |
US8120187B2 (en) | 2007-06-21 | 2012-02-21 | Stats Chippac Ltd. | Integrated circuit package system employing device stacking and method of manufacture thereof |
US20090001593A1 (en) * | 2007-06-27 | 2009-01-01 | Byung Tai Do | Integrated circuit package system with overhanging connection stack |
US7863099B2 (en) * | 2007-06-27 | 2011-01-04 | Stats Chippac Ltd. | Integrated circuit package system with overhanging connection stack |
US8487428B2 (en) * | 2007-11-20 | 2013-07-16 | Fujitsu Limited | Method and system for providing a reliable semiconductor assembly |
US20090127704A1 (en) * | 2007-11-20 | 2009-05-21 | Fujitsu Limited | Method and System for Providing a Reliable Semiconductor Assembly |
US20140210074A1 (en) * | 2013-01-29 | 2014-07-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor Devices, Methods of Manufacture Thereof, and Semiconductor Device Packages |
US9773724B2 (en) * | 2013-01-29 | 2017-09-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor devices, methods of manufacture thereof, and semiconductor device packages |
US10818583B2 (en) | 2013-01-29 | 2020-10-27 | Taiwan Semiconductor Manufacturing Company | Semiconductor devices, methods of manufacture thereof, and semiconductor device packages |
US20150003023A1 (en) * | 2013-06-26 | 2015-01-01 | Fujitsu Component Limited | Electronic component module, board, and method of manufacturing electronic component module |
US9572264B2 (en) * | 2013-06-26 | 2017-02-14 | Fujitsu Component Limited | Electronic component module, board, and method of manufacturing electronic component module |
US20160172326A1 (en) * | 2013-06-27 | 2016-06-16 | Tsinghua University | Bonding method and bonding structure formed using the same |
US9613925B2 (en) * | 2013-06-27 | 2017-04-04 | Tsinghua University | Method for bonding semiconductor devices on sustrate and bonding structure formed using the same |
US11289443B2 (en) * | 2017-04-20 | 2022-03-29 | Palo Alto Research Center Incorporated | Microspring structure for hardware trusted platform module |
Also Published As
Publication number | Publication date |
---|---|
EP1498948A3 (en) | 2006-10-18 |
EP1498948A2 (en) | 2005-01-19 |
KR20050009235A (en) | 2005-01-24 |
JP2005051239A (en) | 2005-02-24 |
US20050012191A1 (en) | 2005-01-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20050012191A1 (en) | Reconnectable chip interface and chip package | |
US6881074B1 (en) | Electrical circuit assembly with micro-socket | |
KR100408948B1 (en) | How to Mount Electronic Components on a Circuit Board | |
JP3006885B2 (en) | Contact structures, interposers, semiconductor assemblies and methods for interconnects | |
US7554206B2 (en) | Microelectronic packages and methods therefor | |
US6417024B2 (en) | Back-to-back semiconductor device module, assemblies including the same and methods | |
US6913468B2 (en) | Methods of removably mounting electronic components to a circuit board, and sockets formed by the methods | |
KR100600683B1 (en) | Semiconductor device and manufacturing method thereof | |
KR101171842B1 (en) | Microelectronic assemblies having very fine pitch stacking | |
US6426564B1 (en) | Recessed tape and method for forming a BGA assembly | |
US20080185705A1 (en) | Microelectronic packages and methods therefor | |
US20040027218A1 (en) | Latching micro magnetic relay packages and methods of packaging | |
US20070007237A1 (en) | Method for self-assembling microstructures | |
US20050040540A1 (en) | Microelectronic assemblies with springs | |
US20110115036A1 (en) | Device packages and methods of fabricating the same | |
US7253514B2 (en) | Self-supporting connecting element for a semiconductor chip | |
US20060027899A1 (en) | Structure with spherical contact pins | |
JP3668074B2 (en) | Semiconductor device and manufacturing method thereof | |
US6441485B1 (en) | Apparatus for electrically mounting an electronic device to a substrate without soldering | |
US6717244B1 (en) | Semiconductor device having a primary chip with bumps in joined registration with bumps of a plurality of secondary chips | |
KR100299465B1 (en) | How to mount the chip interconnect carrier and the spring contactor to the semiconductor device | |
EP0795200B1 (en) | Mounting electronic components to a circuit board | |
JPH0812895B2 (en) | Semiconductor device mounted pin grid array package substrate | |
JP2005503659A (en) | Micro Magnetic Latch Relay Package and Packaging Method | |
JPH10284647A (en) | Ic package |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: COOKSON ELECTRONICS, INC., MASSACHUSETTS Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:GILLEO, KENNETH B.;REEL/FRAME:014306/0413 Effective date: 20030619 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |