CN102382586A - 倒装芯片型半导体背面用膜 - Google Patents
倒装芯片型半导体背面用膜 Download PDFInfo
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- CN102382586A CN102382586A CN2011102123040A CN201110212304A CN102382586A CN 102382586 A CN102382586 A CN 102382586A CN 2011102123040 A CN2011102123040 A CN 2011102123040A CN 201110212304 A CN201110212304 A CN 201110212304A CN 102382586 A CN102382586 A CN 102382586A
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Abstract
本发明涉及一种倒装芯片型半导体背面用膜,其要形成于倒装芯片连接至被粘物的半导体元件的背面上,所述倒装芯片型半导体背面用膜具有在10GPa-30GPa范围内的在热固化后在25℃下的拉伸贮能弹性模量,其中所述倒装芯片型半导体背面用膜在热固化后在25℃下的拉伸贮能弹性模量落入其在热固化前在25℃下的拉伸贮能弹性模量的4倍-20倍范围内。
Description
技术领域
本发明涉及一种倒装芯片型半导体背面用膜,以及涉及包含其的半导体背面用切割带集成膜。倒装芯片型半导体背面用膜用于保护芯片形工件(如半导体芯片)的背面和用于增强其强度。此外,本发明涉及使用半导体背面用切割带集成膜生产半导体器件的方法和涉及倒装芯片安装的半导体器件。
背景技术
近年来,日益要求半导体器件及其封装的薄型化和小型化。因此,作为半导体器件及其封装,已经广泛地利用其中将半导体元件例如半导体芯片通过倒装芯片接合安装(倒装芯片连接)于基板上的倒装芯片型半导体器件。在此类倒装芯片连接中,将半导体芯片以该半导体芯片的电路面与基板的电极形成面相对的形式固定至基板。在此类半导体器件等中,可能存在半导体芯片的背面用保护膜保护以防止半导体芯片损坏等的情况(参见,例如,专利文献1至10)。
专利文献1:JP-A-2008-166451
专利文献2:JP-A-2008-006386
专利文献3:JP-A-2007-261035
专利文献4:JP-A-2007-250970
专利文献5:JP-A-2007-158026
专利文献6:JP-A-2004-221169
专利文献7:JP-A-2004-214288
专利文献8:JP-A-2004-142430
专利文献9:JP-A-2004-072108
专利文献10:JP-A-2004-063551
然而,用保护膜保护半导体芯片背面需要将保护膜粘贴至在切割步骤中获得的半导体芯片的背面的额外步骤。结果,加工步骤数量增加,因此生产成本增加。近年来,半导体器件的薄型化的趋势经常带来其中在拾取它们的步骤中损坏半导体芯片的问题。因此,出于提高半导体晶片和半导体芯片的机械强度的目的,需要增强所述半导体晶片和半导体芯片直至拾取步骤。特别地,当薄型化时,半导体芯片经常翘曲(warp),期望防止此类薄型化的半导体芯片翘曲。
发明内容
考虑到上述问题进行了本发明,并且其目的是提供能够防止倒装芯片连接至被粘物上的半导体元件翘曲的倒装芯片型半导体背面用膜,以及提供包括其的半导体背面用切割带集成膜。
本发明的另一目的是提供生产半导体器件的方法以及提供的半导体器件,在所述方法中,半导体元件能够在防止该元件翘曲的情况下倒装芯片连接至被粘物上,结果,产量增加。
为了解决上述问题的目的,本发明人锐意地研究,结果,发现通过控制倒装芯片型半导体背面用膜热固化前后的拉伸贮能弹性模量,能够防止倒装芯片连接至被粘物上的半导体元件翘曲,并完成了本发明。
即,本发明提供要形成于倒装芯片连接至被粘物的半导体元件背面上的倒装芯片型半导体背面用膜,所述倒装芯片型半导体背面用膜具有在10GPa-30GPa范围内的在热固化后在25℃下的拉伸贮能弹性模量,其中所述倒装芯片型半导体背面用膜在热固化后在25℃下的拉伸贮能弹性模量落入其在热固化前在25℃下的拉伸贮能弹性模量的4倍-20倍范围内。
在倒装芯片安装中,不使用包封半导体封装(PKG;倒装型半导体器件)整体的成型树脂,但是,通常,将称为底填充树脂(underfill resin)的包封树脂用于只包封被粘物和半导体元件之间的凸块连接部分。因此,露出半导体元件背面。因此,例如,在热固化包封树脂时,由于固化收缩而将应力赋予半导体元件,由此半导体元件会由于赋予至其的应力而翘曲。特别地,具有至多300μm厚度(甚至具有至多200μm厚度)的薄半导体元件的翘曲可能是显著的。
本发明的倒装芯片型半导体背面用膜形成于要倒装芯片连接至被粘物上的半导体元件背面上,从而实现保护半导体元件的功能。此外,本发明的倒装芯片型半导体背面用膜的在热固化后在25℃下的拉伸贮能弹性模量落入10GPa-30GPa的范围内,并且为其在热固化前在25℃下的拉伸贮能弹性模量的至少4倍,因而,形成于半导体元件背面的倒装芯片型半导体背面用膜能够以该膜可以抵抗包封树脂在元件周围固化和收缩的此类方式收缩。因此,能够防止半导体封装整体的翘曲。另一方面,由于热固化后该膜的拉伸贮能弹性模量为其在热固化前在25℃下的拉伸贮能弹性模量的至多20倍,因此能够防止半导体封装在再流(reflowing)期间的裂纹。此处,半导体元件背面是指与其形成电路的面(电路面)相对的面(非电路面)。
优选地,在热固化前在25℃下的拉伸贮能弹性模量为0.5GPa-7GPa,优选1GPa-5GPa。当粘贴有倒装芯片型半导体背面用膜的半导体元件利用支承体等输送时,能够防止形成于半导体元件背面的倒装芯片型半导体背面用膜粘附至支承体上,这是因为该膜在热固化前在25℃下的拉伸贮能弹性模量为至少0.5GPa。另一方面,具有至多7GPa的拉伸贮能弹性模量,该膜对半导体晶片的粘合性良好。
优选地,倒装芯片型半导体背面用膜由以树脂组合物的65重量%-95重量%的量包含填料的树脂组合物形成。当树脂组合物中填料的量落入上述范围时,在热固化后在25℃下的拉伸贮能弹性模量能够在10GPa-30GPa的范围内,并且能够为在热固化前在25℃下的拉伸贮能弹性模量的4倍-20倍范围内。
本发明还提供一种半导体背面用切割带集成膜,其包括:切割带和层压于所述切割带上的上述倒装芯片型半导体背面用膜,其中所述切割带包括基材和层压于所述基材上的压敏粘合剂层,以及所述倒装芯片型半导体背面用膜层压于所述压敏粘合剂层上。
根据具有如上所述构成的半导体背面用切割带集成膜,将切割带和倒装芯片型半导体背面用膜集成,因此该类型的切割带集成膜能够用于切割半导体晶片以生产半导体元件的切割步骤和其后的拾取步骤。即,当在切割步骤之前将切割带粘贴至半导体晶片背面时,半导体背面用膜也能够同时粘贴至其,因而不需要单独粘贴半导体背面用膜至半导体晶片的步骤(半导体背面用膜粘贴步骤)。结果,可以减少加工步骤数量。此外,由于半导体背面用膜保护半导体晶片的背面和通过切割形成的半导体元件的背面,因而在切割步骤和随后的步骤(例如,拾取步骤)中能够防止或减少半导体元件损坏(例如,裂纹、碎片(chipping))。
此外,在倒装芯片安装时,不使用包封半导体封装(PKG;倒装芯片型半导体器件)整体的成型树脂,而用称为底充胶的包封树脂仅包封被粘物和半导体元件之间的凸块连接部分。此处,根据本发明的倒装芯片型半导体背面用膜在热固化后在25℃下的拉伸贮能弹性模量在10GPa-30GPa的范围内,并且为其在热固化前在25℃下的拉伸贮能弹性模量的至少4倍,因而,形成于半导体元件背面上的倒装芯片型半导体背面用膜能够以该膜可以抵抗包封树脂在元件周围固化和收缩的方式收缩。结果,能够防止半导体封装整体的翘曲。此外,由于根据本发明的倒装芯片型半导体背面用膜在热固化后在25℃下该膜的拉伸贮能弹性模量为其在热固化前在25℃下的拉伸贮能弹性模量的至多20倍,因此能够防止半导体封装在再流期间的裂纹。
本发明进一步提供生产半导体器件的方法,其中使用上述半导体背面用切割带集成膜,所述方法包括:
将半导体晶片粘贴至半导体背面用切割带集成膜的倒装芯片型半导体背面用膜上,
切割半导体晶片以形成半导体元件,
将所述半导体元件与所述倒装芯片型半导体背面用膜一起从所述切割带的压敏粘合剂层剥离,和
将所述半导体元件倒装芯片连接至被粘物。
在上述方法中,将所述半导体背面用切割带集成膜粘贴至半导体晶片背面,因此该方法不需要单独粘贴半导体背面用膜的步骤(半导体背面膜粘贴步骤)。此外,在半导体晶片切割步骤和用于通过切割形成的半导体元件的拾取步骤中,由于半导体晶片或半导体元件的背面用半导体背面用膜保护,因此,能够防止半导体晶片或元件损坏。结果,在生产倒装芯片型半导体器件时,产量能够增加。
优选地,上述倒装芯片接合(倒装芯片连接步骤)包括将包封树脂填充在倒装芯片接合至被粘物上的半导体元件和被粘物之间的缝隙中,接着热固化该包封树脂。
在热固化包封树脂时,通过其固化收缩将应力赋予至半导体元件,并且由于该应力,半导体元件会因此翘曲。特别地,具有至多300μm的厚度(甚至具有至多200μm的厚度)的薄半导体元件的翘曲可能是显著的。然而,在上述方法中,热固化后的拉伸贮能弹性模量(25℃)为10GPa-30GPa,并且为热固化前的拉伸贮能弹性模量(25℃)的4倍-20倍,因而,形成于半导体元件背面的倒装芯片型半导体背面用膜能够以该膜可以抵抗包封树脂在树脂热固化时收缩的方式收缩。因此,能够防止半导体封装(PKG;倒装芯片型半导体器件)整体的翘曲。此外,能够防止半导体封装在再流期间的裂纹。
作为半导体晶片,此处使用的是具有20μm-300μm厚度的半导体晶片。因此,能够生产薄倒装芯片型半导体器件。
本发明进一步提供根据上述半导体器件生产方法生产的倒装芯片型半导体器件。
本发明的倒装芯片型半导体背面用膜形成于倒装芯片连接至被粘物的半导体元件背面上,并因此实现保护半导体元件的功能。此外,本发明的倒装芯片型半导体背面用膜中,在热固化后在25℃下的拉伸贮能弹性模量落入10GPa-30GPa的范围内,并且为其在热固化前在25℃下的拉伸贮能弹性模量的4倍-20倍,因而,形成于半导体元件背面的倒装芯片型半导体背面用膜能够以该膜可以抵抗包封树脂在元件周围固化和收缩的方式收缩。结果,能够防止半导体封装整体的翘曲。此外,能够有效地防止半导体封装(PKG;倒装芯片型半导体器件)在再流期间的裂纹。
此外,根据本发明的半导体背面用切割带集成膜,将切割带和倒装芯片型半导体背面用膜集成,因此该类型的切割带集成膜能够用于切割半导体晶片以生产半导体元件的切割步骤和其后的拾取步骤。结果,不需要单独粘贴半导体背面用膜的步骤(半导体背面膜粘贴步骤)。此外,在随后的切割步骤和拾取步骤中,由于将半导体背面用膜粘贴至半导体晶片或通过切割形成的半导体元件的背面,能够有效地保护半导体晶片和半导体元件,并能够防止半导体元件损坏。此外,能够防止其中将半导体元件倒装芯片连接至被粘物上的半导体器件翘曲。
根据本发明的半导体器件的生产方法,将半导体背面用切割带集成膜粘贴至半导体晶片的背面,因此,不需要单独粘贴半导体背面用膜的步骤。此外,在半导体晶片切割步骤和用于通过切割形成的半导体元件的拾取步骤中,由于用半导体背面用膜保护半导体晶片或半导体元件的背面,因而能够保护半导体晶片或元件不被损坏。此外,能够防止其中将半导体元件倒装芯片连接至被粘物上的半导体器件整体的翘曲。结果,在生产倒装芯片型半导体器件时能够增加产量。
附图说明
图1为示出本发明的半导体背面用切割带集成膜的一个实施方案的截面示意图。
图2A-2D为示出使用本发明的半导体背面用切割带集成膜生产半导体器件的方法的一个实施方案的截面示意图。
附图标记说明
1半导体背面用切割带集成膜
2半导体背面用膜
3切割带
31基材
32压敏粘合剂层
33相应于半导体晶片粘贴部分的部分
4半导体晶片
5半导体芯片
51形成于半导体芯片5的电路面侧上的凸块(Bump)
6被粘物
61粘贴至被粘物6的连接垫(connection pad)的连结用导电性材料
具体实施方式
参考图1描述本发明的实施方案,但本发明不限于这些实施方案。图1为示出根据本实施方案的半导体背面用切割带集成膜的一个实施方案的截面示意图。此外,在本说明书的附图中,没有给出不需要描述的部分,为了容易描述,存在通过放大、缩小等示出的部分。
(半导体背面用切割带集成膜)
如图1所示,半导体背面用切割带集成膜1(以下有时也称为“切割带集成的半导体背面保护膜”、“具有切割带的半导体背面用膜”或“具有切割带的半导体背面保护膜”)具有包括以下的构造:包括形成于基材31上的压敏粘合剂层32的切割带3,和作为形成于压敏粘合剂层32上的倒装芯片型半导体背面用膜2(以下有时称为“半导体背面用膜”或“半导体背面保护膜”)。还如图1所示,本发明的半导体背面用切割带集成膜可以设计为将半导体背面用膜2仅形成于相应于半导体晶片粘贴部分的部分33上;然而,半导体背面用膜可以形成于压敏粘合剂层32的整个表面上。此外,半导体背面用膜2的表面(要粘贴到晶片背面的表面)可以用隔离膜等保护直至该膜粘附至晶片背面。
(倒装芯片型半导体背面用膜)
半导体背面用膜2具有膜形状。在半导体背面用切割带集成膜作为产品的实施方案中,半导体背面用膜2通常处于未固化状态(包括半固化状态),并且在半导体背面用切割带集成膜粘贴至半导体晶片之后热固化(详细描述如下)。
半导体背面用膜2在热固化后在25℃下的拉伸贮能弹性模量为10GPa-30GPa,且为其热固化前的拉伸贮能弹性模量的4倍-20倍。在倒装芯片连接时,将半导体元件倒装芯片接合至被粘物上,然后仅在被粘物和半导体元件之间的连接部分用包封材料(例如,称为底充胶的包封树脂)包封。此外,将包封材料热固化,由此通过包封材料的固化收缩将应力赋予至半导体元件。然而,根据该实施方案的半导体背面用膜2,该膜热固化后在25℃下的拉伸贮能弹性模量为其在热固化前在25℃下的拉伸贮能弹性模量的至少4倍,因而,在热固化该包封材料时,该膜以其能够抵抗包封材料在膜周围固化和收缩的方式固化和收缩。结果,能够防止半导体元件翘曲。因此,即使倒装芯片连接至被粘物的半导体元件为薄的(例如,具有至多300μm、甚至至多200μm的厚度),也能够防止半导体封装整体的翘曲。当将半导体背面用膜2粘贴至具有100μm厚度和长×宽为10mm×10mm的尺寸的半导体芯片时,通过该膜的固化收缩的翘曲度优选至少200μm。然而,在半导体背面用膜2的翘曲度超过包封材料的翘曲度太大时,则由于该原因半导体封装可能翘曲;从该观点,膜2的翘曲度优选至多300μm。用于测量翘曲度的方法在以下给出的实施例中详细描述。
该实施方案中的半导体背面用膜2在热固化后在25℃下的拉伸贮能弹性模量为其在热固化前在25℃下的拉伸贮能弹性模量的至多20倍,因而,能够防止具有该膜的半导体封装(PKG;倒装芯片型半导体器件)在再流期间的裂纹。在热固化后在25℃下的拉伸贮能弹性模量的下限优选为至少11GPa(更优选至少12GPa)。上限优选为至多28GPa(更优选至多25GPa)。在热固化后在25℃下的拉伸贮能弹性模量优选为固化前25℃下拉伸贮能弹性模量的4倍-15倍、更优选4倍-10倍。半导体背面用膜2的热固化是指,例如,通过在200℃的加热温度下的热处理固化该膜2小时的这样的情况。
半导体背面用膜2在热固化后在25℃下的拉伸贮能弹性模量通过以下确定:制备没有层压至切割带3上的未固化态的膜,然后在165℃将其固化2小时,使用Rheometrics Co.Ltd.制造的动态粘弹性测量设备″Solid Analyzer RS A2″在指定温度(25℃)的氮气气氛中在样品宽度10mm、样品长度22.5mm、样品厚度0.2mm、频率1Hz和加热速率为10℃/分的条件下以拉伸模式测量固化膜的弹性模量,并将测量值作为该膜的拉伸贮能弹性模量。
例如,通过将填料引入至半导体背面用膜2中,能够控制该膜在热固化后的拉伸贮能弹性模量。还通过改变半导体背面用膜2中的树脂组分(例如热塑性树脂组分、热固性树脂组分)的类型和含量来控制该模量。当将填料引入至半导体背面用膜2时,则可以将导电性赋予该膜,或者能够提高该膜的导热性。半导体背面用膜2可以为导电性的或非导电性的。
填料可为任意无机填料和有机填料,但无机填料是合适的。无机填料的实例包括由以下组成的各种无机粉末:二氧化硅,粘土,石膏,碳酸钙,硫酸钡,氧化铝,氧化铍,陶瓷如碳化硅和氮化硅,金属或合金如铝、铜、银、金、镍、铬、铅、锡、锌、钯和焊料,以及碳等。填料可以单独或两种以上组合使用。特别地,填料适合为二氧化硅,更适合为熔凝硅石。无机填料的平均粒径优选在0.1至80μm的范围内。无机填料的平均粒径例如通过激光衍射型粒径仪来测量。填料(特别地,无机填料)的共混量优选为树脂组合物的65重量%-90重量%,更优选68重量%-88重量%,甚至更优选70重量%-85重量%。当填料的共混量为树脂组合物的65重量%-90重量%时以及在将具有粘贴至其的倒装芯片型半导体背面用膜的半导体元件利用支承体等输送的情况下,则能够防止在半导体元件背面上形成的倒装芯片型半导体背面用膜粘合至支承体。
半导体背面用膜2可以为单层膜或其中层压多层的层压膜。在半导体背面用膜2为层压膜的情况下,作为整体层压膜的热固化后的拉伸贮能弹性模量,该膜在热固化后在25℃下的拉伸贮能弹性模量良好地为10GPa-30GPa且为其热固化前的拉伸贮能弹性模量的4倍-20倍。
半导体背面用膜2在热固化前(未固化或半固化状态)在25℃下的拉伸贮能弹性模量优选为0.5GPa-7GPa,更优选1GPa-5GPa、进一步优选1.5GPa-4.5GPa。当拉伸贮能弹性模量为至少0.5GPa时和在半导体芯片与粘贴至其的半导体背面用膜2一起从切割带的压敏粘合剂层32剥离,然后将半导体背面用膜2放置在支承体上并输送的情况下,则能够有效地防止半导体背面用膜粘合于支承体。另一方面,当拉伸贮能弹性模量为至多7GPa时,该膜至半导体晶片的粘合会是良好的。支承体为例如,载带中的顶带或底带等。在半导体背面用膜2由包含热固性树脂组分的树脂组合物形成的情况下,如上所述,热固性树脂组分通常为未固化或部分固化状态,以致半导体背面用膜在25℃下的拉伸贮能弹性模量为热固性树脂组分是未固化或部分固化的状态下在25℃下的拉伸贮能弹性模量。
半导体背面用膜2在热固化前在25℃下的拉伸贮能弹性模量通过以下确定:制备没有层压至切割带3上的处于未固化态的膜,使用Rheometrics Co.Ltd.制造的动态粘弹性测量设备″SolidAnalyzer RS A2″在指定温度(25℃)下在氮气气氛中在样品宽度10mm、样品长度22.5mm、样品厚度0.2mm、频率1Hz和加热速率为10℃/分的条件以拉伸模式测量固化膜的弹性模量,并将测量值作为该膜的拉伸贮能弹性模量。
在半导体背面用膜2为层压膜的情况下,作为整体层压膜的拉伸贮能弹性模量,其热固化前的拉伸贮能弹性模量可以良好地落入0.5GPa-7GPa的范围内。在半导体背面用膜2未固化的状态中,该膜的拉伸贮能弹性模量(25℃)可以通过适当确定下述树脂组分(例如热塑性树脂组分、热固性树脂组分)的类型和含量以及填料如二氧化硅等的类型和含量来控制。
在半导体背面用膜2在热固化前的拉伸贮能弹性模量通过将填料引入至该膜中来控制的情况下,填料的量优选为65重量%-95重量%、更优选68重量%-90重量%、再更优选70重量%-85重量%。优选地,无机填料的平均粒径在0.1μm-80μm的范围内。无机填料的平均粒径可通过例如激光衍射型粒径仪来测量。此处可用的填料的实例如上所述。
半导体背面用膜2可由树脂组合物形成,并且树脂组合物优选包含至少热固性树脂组分的树脂组合物。由至少热固性树脂组分形成的半导体背面用膜可以有效地显示作为粘合剂层的功能。然而,树脂组合物可以含有热塑性树脂组分。
在树脂组合物包含热塑性树脂组分的情况下,从树脂膜对半导体晶片的粘合性的角度,热塑性树脂组分的比例优选为小于30重量%(例如,0重量%以上至小于30重量%)、更优选至多28重量%(甚至更优选至多25重量%)的全部树脂组分。当在树脂组合物中的热塑性树脂组分的比例过小时,则会降低树脂组合物的成膜性。因此,从树脂组合物的成膜性的角度,树脂组合物中热塑性树脂组分相对于其中的全部树脂组分的比例的下限优选为至少5重量%,更优选至少10重量%,甚至更优选至少15重量%。
在树脂组合物中热固性树脂组分的比例为从全部树脂组分100重量%减去热塑性树脂组分比例的剩余部分。在热塑性树脂组分的比例为全部树脂组分的0重量%的情况下,则树脂组合物为仅包含热固性树脂组分(而不含热塑性树脂组分)作为其中的树脂组分的树脂组合物(热塑性树脂组合物)。
此外,除了环氧树脂和酚醛树脂之外,热固性树脂组分的实例还包括,氨基树脂、不饱和聚酯树脂、聚氨酯树脂、硅酮树脂和热固性聚酰亚胺树脂。热固性树脂组分可以单独使用或以其两种以上的组合使用。作为热固性树脂组分,仅包含少量腐蚀半导体元件的离子性杂质的环氧树脂是合适的。此外,酚醛树脂适合用作环氧树脂的固化剂。
环氧树脂不特别限制,例如,可使用双官能环氧树脂或多官能环氧树脂如双酚A型环氧树脂、双酚F型环氧树脂、双酚S型环氧树脂、溴化双酚A型环氧树脂、氢化双酚A型环氧树脂、双酚AF型环氧树脂、联苯型环氧树脂、萘型环氧树脂、芴型环氧树脂、苯酚酚醛清漆(phenol novolak)型环氧树脂、邻甲酚酚醛清漆(o-cresol novolak)型环氧树脂、三羟基苯甲烷型环氧树脂和四羟苯基乙烷(tetraphenylolethane)型环氧树脂,或环氧树脂如乙内酰脲型环氧树脂、三缩水甘油基异氰脲酸酯型环氧树脂或缩水甘油基胺型环氧树脂。
作为环氧树脂,在以上示例的那些中,酚醛清漆型环氧树脂、联苯型环氧树脂、三羟基苯甲烷型环氧树脂和四羟苯基乙烷型环氧树脂是优选的。这是因为这些环氧树脂与作为固化剂的酚醛树脂具有高反应性,且耐热性等优良。
没有具体限定,作为热塑性树脂组分的苯氧基树脂包括例如具有其中引入酚组分作为构成单元的环氧树脂,例如通过表氯醇和双酚化合物(二价酚化合物)的反应获得的树脂和通过二价环氧化合物和双酚化合物反应获得的树脂。苯氧基树脂的实例包括具有选自以下中至少一种骨架的那些:双酚骨架(例如,双酚A-型骨架、双酚F-型骨架、双酚A/F混合-型骨架、双酚S-型骨架、双酚M-型骨架、双酚P-型骨架、双酚A/P混合-型骨架、双酚Z-型骨架)、萘骨架、降冰片烯骨架、芴骨架、联苯骨架、蒽骨架、线型酚醛清漆骨架、芘骨架、氧杂蒽骨架、金刚烷(adamantan)骨架和双环戊二烯骨架。作为苯氧基树脂,此处可用的是商用产品。此处可以单独或组合使用一种或多种不同类型的苯氧基树脂。
此外,上述酚醛树脂起到环氧树脂或苯氧基树脂的固化剂的作用,其实例包括酚醛清漆型酚醛树脂如苯酚酚醛清漆树脂、苯酚芳烷基树脂、甲酚酚醛清漆树脂、叔丁基苯酚酚醛清漆树脂和壬基苯酚酚醛清漆树脂;甲阶型酚醛树脂;和聚氧苯乙烯(polyoxystyrenes)如聚对氧苯乙烯。酚醛树脂可单独或以两种以上组合使用。在这些酚醛树脂中,苯酚酚醛清漆树脂和苯酚芳烷基树脂是特别优选的。这是因为可改进半导体器件的连接可靠性。
关于其共混比例,例如,环氧树脂与酚醛树脂优选共混以致酚醛树脂中的羟基能够为0.5当量至2.0当量,基于每当量环氧树脂组分中的环氧基团。更优选地,羟基能够为0.8当量至1.2当量。具体地,在二者的共混比超出上述范围的情况下,则固化反应不能充分实现,并且会使固化的环氧树脂产物的特性容易地劣化。
用于环氧树脂和酚醛树脂的热固化促进催化剂可以适当选自已知的热固化促进催化剂,而没有限定。一种或多种热固化促进催化剂在此可以或单独或组合使用。作为热固化促进催化剂,例如,可使用胺类固化促进催化剂、磷类固化促进催化剂、咪唑类固化促进催化剂、硼类固化促进催化剂或磷-硼类固化促进催化剂。
没有特别限定,所述胺类固化促进剂包括例如三氟硼酸单乙醇胺(由Stella Chemifa Co.,Ltd.制造)、双氰胺(由NacalaiTesque Co.,Ltd.制造)。
没有特别限定,所述磷类固化促进催化剂包括例如三有机膦如三苯基膦、三丁基膦、三(对甲基苯基)膦、三(壬基苯基)膦、二苯基甲苯基膦;以及四苯基溴化鏻(商品名TPP-FB)、甲基三苯基鏻(商品名TPP-MB)、甲基三苯基氯化鏻(商品名TPP-MC)、甲氧基甲基三苯基鏻(商品名TPP-MOC)、苄基三苯基氯化鏻(商品名TPP-ZC)(均由Hokko Chemical Industry Co.,Ltd.制造)。优选地,三苯基膦化合物基本上不溶于环氧树脂。当不溶于环氧树脂时,则它们可以防止过度热固化。具有三苯基膦结构并且基本上不溶于环氧树脂的热固化催化剂为,例如,甲基三苯基鏻(商品名TPP-MB)。这里,术语“不溶”是指包括三苯基膦化合物的热固化催化剂不溶于包括环氧树脂的溶剂,更精确地,在落入10-40℃的范围内的温度下所述催化剂不以10重量%以上的量溶于溶剂中。
咪唑类固化促进剂包括2-甲基咪唑(商品名2MZ)、2-十一烷基咪唑(商品名C11-Z)、2-十七烷基咪唑(商品名C 17Z)、1,2-二甲基咪唑(商品名1,2DMZ)、2-乙基-4-甲基咪唑(商品名2E4MZ)、2-苯基咪唑(商品名2PZ)、2-苯基-4-甲基咪唑(商品名2P4MZ)、1-苄基-2-甲基咪唑(商品名1B2MZ)、1-苄基-2-苯基咪唑(商品名1B2PZ)、1-氰基乙基-2-甲基咪唑(商品名2MZ-CN)、1-氰基乙基-2-十一烷基咪唑(商品名C11Z-CN)、1-氰基乙基-2-苯基咪唑-1,2,4-苯三甲酸盐(商品名2PZCNS-PW)、2,4-二氨基-6-[2’-甲基咪唑基-(1’)]-乙基-s-三嗪(商品名2MZ-A)、2,4-二氨基-6-[2’-十一烷基咪唑基-(1’)]-乙基-s-三嗪(商品名C 11Z-A)、2,4-二氨基-6-[2’-乙基-4’-甲基咪唑基-(1’)]-乙基-s-三嗪(商品名2E4MZ-A)、2,4-二氨基-6-[2′-甲基咪唑基-(1’)]-乙基-s-三嗪异氰脲酸加合物(商品名2MA-OK)、2-苯基-4,5-二羟基甲基咪唑(商品名2PHZ-PW)、2-苯基-4-甲基-5-羟基甲基咪唑(商品名2P4MHZ-PW)(均由Shikoku Chemical Industry Co.,Ltd.制造)。
没有特别限定,所述硼类固化促进剂包括例如三氯硼烷。
没有特别限定,所述磷/硼类固化促进剂包括例如四苯基鏻四苯基硼酸盐(商品名TPP-K)、四苯基鏻四对三硼酸盐(商品名TPP-MK)、苄基三苯基鏻四苯基硼酸盐(商品名TPP-ZK)、三苯基膦三苯基硼烷(商品名TPP-S)(均由Hokko Chemical IndustryCo.,Ltd.制造)。
热固化促进催化剂的共混比优选在0.01-15重量份、更优选0.02-10重量份、甚至更优选0.05-5重量份的范围内,相对于100重量份热固性树脂。当相对于100重量份热固性树脂,共混比为至少0.01重量份时,则组合物在热固化后在25℃下的拉伸贮能弹性模量能够为至少10GPa。此外,虽然热固化包封树脂,但是半导体背面用膜2也能够充分地热固化,以致该膜能够确实地粘合至并固定在半导体元件背面,从而生产倒装芯片型半导体器件而没有膜剥离风险。另一方面,当相对于100重量份热固性树脂,共混比为至多15重量份时,则组合物在热固化后在25℃下的拉伸贮能弹性模量能够为至多30GPa,以及能够防止固化延迟。
热塑性树脂组分的实例包括天然橡胶、丁基橡胶、异戊二烯橡胶、氯丁橡胶、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯类共聚物、聚丁二烯树脂、聚碳酸酯树脂、热塑性聚酰亚胺树脂、聚酰胺树脂如尼龙-6和尼龙-6,6、苯氧基树脂、丙烯酸类树脂、饱和聚酯树脂如PET(聚对苯二甲酸乙二酯)或PBT(聚对苯二甲酸丁二醇酯)、聚酰胺酰亚胺树脂,和氟树脂。热塑性树脂可单独或以两种以上组合使用。在这些热塑性树脂组分中,特别优选包含少量离子杂质、具有高耐热性和能够确保半导体元件可靠性的丙烯酸类树脂。
丙烯酸类树脂不特别限制,其实例包括含有一种或两种以上具有30个以下碳原子、优选4至18个碳原子、更优选6至10个碳原子和特别是8或9个碳原子的直链或支链烷基的丙烯酸酯或甲基丙烯酸酯作为组分的聚合物。即,在本发明中,丙烯酸类树脂具有也包括甲基丙烯酸类树脂的广泛含义。所述烷基的实例包括甲基、乙基、丙基、异丙基、正丁基、叔丁基、异丁基、戊基、异戊基、己基、庚基、2-乙基己基、辛基、异辛基、壬基、异壬基、癸基、异癸基、十一烷基、十二烷基(月桂基)、十三烷基、十四烷基、硬脂基和十八烷基。
此外,形成丙烯酸类树脂的其它单体(除其中所述烷基具有30个以下碳原子的丙烯酸或甲基丙烯酸的烷基酯以外的单体)没有特别限定,其实例包括含羧基单体如丙烯酸、甲基丙烯酸、丙烯酸羧乙酯、丙烯酸羧戊酯、衣康酸、马来酸、富马酸和巴豆酸;酸酐单体如马来酸酐和衣康酸酐;含羟基单体如(甲基)丙烯酸2-羟乙酯、(甲基)丙烯酸2-羟丙酯、(甲基)丙烯酸4-羟丁酯、(甲基)丙烯酸6-羟己酯、(甲基)丙烯酸8-羟辛酯、(甲基)丙烯酸10-羟癸酯、(甲基)丙烯酸12-羟月桂酯和(4-羟甲基环己基)-甲基丙烯酸酯;含磺酸基团单体如苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯酰胺基-2-甲基丙磺酸、(甲基)丙烯酰胺基丙磺酸、(甲基)丙烯酸磺丙酯和(甲基)丙烯酰氧基萘磺酸;和含磷酸基团单体如2-羟乙基丙烯酰磷酸酯(2-hydroxyethylacryloylphosphate)。在这方面,(甲基)丙烯酸是指丙烯酸和/或甲基丙烯酸,(甲基)丙烯酸酯类是指丙烯酸酯类和/或甲基丙烯酸酯类,(甲基)丙烯酰基是指丙烯酰基和/或甲基丙烯酰基,等等,将其应用于整个说明书中。
作为丙烯酸类树脂,还优选为具有不低于25℃的玻璃化转变温度(Tg)的丙烯酸类树脂(丙烯酸类橡胶)。在使用此类具有不低于25℃的Tg的丙烯酸类树脂的情况下,即使该膜包含丙烯酸类树脂,半导体背面用膜的拉伸贮能弹性模量(热固化后,25℃)仍能够控制为至少10GPa。Tg可以良好地为不低于25℃,但优选不低于26℃,更优选不低于27℃,甚至更优选不低于28℃。Tg的上限优选为不高于200℃,以及更优选为不高于150℃、不高于120℃、不高于100℃、不高于80℃以及不高于50℃,或者以此顺序尽可能的低。当Tg高于200℃时,则存在发生其中封装会在再流期间的裂纹的缺点。丙烯酸类树脂的Tg可通过构成单体的类型和比例以及通过固化催化剂的类型来控制。丙烯酸类树脂的Tg可通过热机械分析(TMA)来测量。
重要的是半导体背面用膜2对于半导体晶片背面(非电路形成面)具有粘合性(紧密粘合性)。半导体背面用膜2可以由,例如,含有环氧树脂作为热固性树脂组分的树脂组合物形成。在半导体背面用膜2预先交联至一定程度的情况中,在其制备时,添加能够与在聚合物分子链末端的官能团等反应的多官能化合物作为交联剂。由此,可以改进该膜在高温下的粘合特性并且可以提高其耐热性。
半导体背面用膜对半导体晶片的粘合力(23℃,剥离角180°,剥离速率300mm/分钟)优选在0.5N/20mm至15N/20mm,更优选0.7N/20mm至10N/20mm的范围内。具有至少0.5N/20mm的粘合力,该膜能够以优异粘合性粘合至半导体晶片和半导体元件并免于膜隆起(swelling)等的粘合不良。另外,在半导体晶片切割中,可以防止芯片飞出。另一方面,具有至多15N/20mm的粘合力,该膜容易地从切割带剥离。
交联剂不特别限定,可使用已知的交联剂。具体地,例如,不仅可提及异氰酸酯类交联剂、环氧类交联剂、三聚氰胺类交联剂和过氧化物类交联剂,还提及脲类交联剂、金属醇盐类交联剂、金属螯合物类交联剂、金属盐类交联剂、碳二亚胺类交联剂、噁唑啉类交联剂、氮丙啶类交联剂和胺类交联剂等。作为交联剂,异氰酸酯类交联剂或环氧类交联剂是适合的。交联剂可以单独使用或两种以上组合使用。
异氰酸酯类交联剂的实例包括低级脂肪族多异氰酸酯例如1,2-亚乙基二异氰酸酯、1,4-亚丁基二异氰酸酯和1,6-六亚甲基二异氰酸酯;脂环族多异氰酸酯例如亚环戊基二异氰酸酯、亚环己基二异氰酸酯、异氟尔酮二异氰酸酯、氢化甲苯二异氰酸酯和氢化苯二甲撑二异氰酸酯;芳香族多异氰酸酯例如2,4-甲苯二异氰酸酯、2,6-甲苯二异氰酸酯、4,4′-二苯甲烷二异氰酸酯和苯二甲撑二异氰酸酯。另外,也使用三羟甲基丙烷/甲苯二异氰酸酯三聚体加合物[商品名“COLONATE L”,由NipponPolyurethane Industry Co.,Ltd.制造]、三羟甲基丙烷/六亚甲基二异氰酸酯三聚体加合物[商品名“COLONATE HL”,由NipponPolyurethane Industry Co.,Ltd.制造]等。此外,环氧类交联剂的实例包括N,N,N′,N′-四缩水甘油基-间-苯二甲胺、二缩水甘油基苯胺、1,3-双(N,N-缩水甘油基氨甲基)环己烷、1,6-己二醇二缩水甘油醚、新戊二醇二缩水甘油醚、乙二醇二缩水甘油基醚、丙二醇二缩水甘油醚、聚乙二醇二缩水甘油基醚、聚丙二醇二缩水甘油醚、山梨糖醇多缩水甘油醚、甘油多缩水甘油醚、季戊四醇多缩水甘油醚、聚甘油多缩水甘油醚、脱水山梨糖醇多缩水甘油醚、三羟甲基丙烷多缩水甘油醚、己二酸二缩水甘油酯、邻苯二甲酸二缩水甘油酯、三缩水甘油基-三(2-羟乙基)异氰脲酸酯、间笨二酚二缩水甘油醚和双酚-S-二缩水甘油醚,以及还有在分子中具有两个以上环氧基团的环氧类树脂。
交联剂的用量不特别限定,可依赖于交联程度适当选择。具体地,优选交联剂的使用量为通常7重量份以下(例如,0.05至7重量份),基于100重量份聚合物组分(特别地,在分子链末端具有官能团的聚合物)。当交联剂的量基于100重量份聚合物组分大于7重量份时,粘合力降低,因此这种情况不是优选的。从改善内聚力的角度,交联剂的量优选为0.05重量份以上,基于100重量份聚合物组分。在本发明中,代替使用交联剂或与使用交联剂一起,也可以通过用电子束或UV光等的照射来进行交联处理。
优选将半导体背面用膜2着色。从而,可以显示优异的外观性,并且变得可以使半导体器件具有增值外观性。具体地,例如,作为半导体器件,可以通过使用不同的颜色将其产品分类。在将半导体背面用膜着色的情况(该膜既不是无色的也不是透明的情况)下,通过着色显示的颜色没有特别限定,但例如优选暗色如黑色、蓝色或红色,黑色是特别适合的。
在本实施方案中,暗色主要指具有60以下(0至60),优选50以下(0至50),更优选40以下(0至40)的在L*a*b*颜色空间中定义的L*的暗色。
此外,黑色主要是指具有35以下(0至35),优选30以下(0至30),更优选25以下(0至25)的在L*a*b*颜色空间中定义的L*的黑色系颜色。在这点上,在黑色中,在L*a*b*颜色空间中定义的各a*和b*可根据L*的值适当选择。例如,a*和b*两者均优选在-10至10,更优选-5至5,进一步优选-3至3(特别地0或约0)的范围内。
在本实施方案中,在L*a*b*颜色空间中定义的L*、a*和b*可通过用色差计(商品名“CR-200”,由Minolta Ltd制造;色差计)测量来确定。L*a*b*颜色空间为在1976年由CommissionInternationale de l’Eclairage(CIE)建议的颜色空间,是指称为CIE1976(L*a*b*)颜色空间的颜色空间。此外,在日本工业标准(Japanese Industrial Standards)JIS Z8729中定义了L*a*b*颜色空间。
在半导体背面用膜2着色时,根据目标颜色,可使用着色剂(着色试剂)。作为该着色剂,可适合使用各种暗色着色剂如黑色着色剂、蓝色着色剂和红色着色剂,黑色着色剂是更适合的。着色剂可为任意颜料和染料。着色剂可单独使用或两种以上组合使用。在这点上,作为染料,可以使用任何形式的染料如酸性染料、反应性染料、直接染料、分散染料和阳离子染料。此外,同样关于颜料,其形式不特别限定,可在已知颜料中适当选择和使用。
特别地,当将染料用作着色剂时,通过在半导体背面用膜内的溶解使染料变得处于均匀或几乎均匀分散的状态,从而可以容易地生产具有均匀或几乎均匀的着色浓度的半导体背面用膜(作为结果,半导体背面用切割带集成膜)。因此,当将染料用作着色剂时,半导体背面用切割带集成膜中的半导体背面用膜能够具有均匀或几乎均匀的着色浓度并能够增强标识性和外观性。
黑色着色剂不特别限制,例如,可适当选自无机黑色颜料和黑色染料。此外,黑色着色剂可为其中将青色着色剂(蓝-绿着色剂)、品红色着色剂(红-紫着色剂)和黄色着色剂(黄着色剂)混合的着色剂混合物。黑色着色剂可单独使用或两种以上的组合使用。当然,黑色着色剂可与除黑色之外颜色的着色剂组合使用。
黑色着色剂的具体实例包括炭黑(如炉黑、槽黑、乙炔黑、热裂炭黑或灯黑)、石墨、氧化铜、二氧化锰、偶氮型颜料(例如,偶氮甲碱偶氮黑)、苯胺黑、苝黑、钛黑、花青黑、活性炭、铁素体(如非磁性铁素体或磁性铁素体)、磁铁矿、氧化铬、氧化铁、二硫化钼、铬配合物、复合氧化物型黑色颜料和蒽醌型有机黑色颜料。
本发明中,作为黑色着色剂,还可以使用黑色染料如C.I.溶剂蓝3、7、22、27、29、34、43、70,C.I.直接黑17、19、22、32、38、51、71,C.I.酸性黑1、2、24、26、31、48、52、107、109、110、119、154,和C.I.分散黑1、3、10、24;和黑色颜料如C.I.颜料黑1、7;等。
作为该黑色着色剂,例如,商品名″Oil Black BY″、商品名″Oil Black BS″、商品名″Oil Black HBB″、商品名″Oil Black 803″、商品名″Oil Black 860″、商品名″Oil Black 5970″、商品名″OilBlack 5906″、商品名″Oil Black 5905″(由Orient ChemicalIndustries Co.,Ltd.制造)等是商购可得的。
除了黑色着色剂之外的着色剂的实例包括青色着色剂、品红色着色剂和黄色着色剂。青色着色剂的实例包括青色染料如C.I.溶剂蓝25、36、60、70、93、95;C.I.酸性蓝6和45;青色颜料如C.I.颜料蓝1、2、3、15、15:1、15:2、15:3、15:4、15:5、15:6、16、17、17:1、18、22、25、56、60、63、65、66;C.I.瓮蓝4、60;C.I.颜料绿7。
此外,在品红色着色剂中,品红色染料的实例包括C.I.溶剂红1、3、8、23、24、25、27、30、49、52、58、63、81、82、83、84、100、109、111、121、122;C.I.分散红9;C.I.溶剂紫8、13、14、21、27;C.I.分散紫1;C.I.碱性红1、2、9、12、13、14、15、17、18、22、23、24、27、29、32、34、35、36、37、38、39、40;C.I.碱性紫1、3、7、10、14、15、21、25、26、27和28。
在品红色着色剂中,品红色颜料的实例包括C.I.颜料红1、2、3、4、5、6、7、8、9、10、11、12、13、14、15、16、17、18、19、21、22、23、30、31、32、37、38、39、40、41、42、48:1、48:2、48:3、48:4、49、49:1、50、51、52、52:2、53:1、54、55、56、57:1、58、60、60:1、63、63:1、63:2、64、64:1、67、68、81、83、87、88、89、90、92、101、104、105、106、108、112、114、122、123、139、144、146、147、149、150、151、163、166、168、170、171、172、175、176、177、178、179、184、185、187、190、193、202、206、207、209、219、222、224、238、245;C.I.颜料紫3、9、19、23、31、32、33、36、38、43、50;C.I.瓮红1、2、10、13、15、23、29和35。
此外,黄色着色剂的实例包括黄色染料如C.I.溶剂黄19、44、77、79、81、82、93、98、103、104、112和162;黄色颜料如C.I.颜料橙31、43;C.I.颜料黄1、2、3、4、5、6、7、10、11、12、13、14、15、16、17、23、24、34、35、37、42、53、55、65、73、74、75、81、83、93、94、95、97、98、100、101、104、108、109、110、113、114、116、117、120、128、129、133、138、139、147、150、151、153、154、155、156、167、172、173、180、185、195;C.I.瓮黄1、3和20。
各种着色剂如青色着色剂、品红色着色剂和黄色着色剂可分别单独使用或以两种以上的组合使用。在此点上,在使用各种着色剂如青色着色剂、品红色着色剂和黄色着色剂的两种以上的情况下,这些着色剂的混合比(或共混比)没有特别限定,可根据各着色剂的种类和目标颜色等适当选择。
在将半导体背面用膜2着色的情况中,着色的形式没有特别限定。半导体背面用膜可以是例如,添加有着色剂的单层膜状制品。另外,该膜可以是其中至少层压至少由热固性树脂组分形成的树脂层和着色剂层的层压膜。在这点上,在半导体背面用膜2是树脂层和着色剂层的层压膜的情况中,层压形式的半导体背面用膜2优选具有树脂层/着色剂层/树脂层的层压形式。在此情况下,在着色剂层两侧的两层树脂层可为具有相同组成的树脂层或可为具有不同组成的树脂层。
根据需要可以向半导体背面用膜2中适当地共混其它添加剂。其它添加剂的实例除了阻燃剂、硅烷偶联剂和离子捕集剂以外,还包括增量剂、防老剂、抗氧化剂和表面活性剂。
阻燃剂的实例包括三氧化锑、五氧化锑和溴化环氧树脂。阻燃剂可以单独使用或以两种以上组合使用。硅烷偶联剂的实例包括β-(3,4-环氧环己基)乙基三甲氧基硅烷、γ-环氧丙氧丙基三甲氧基硅烷和γ-环氧丙氧丙基甲基二乙氧基硅烷。硅烷偶联剂可以单独使用或以两种以上组合使用。离子捕集剂的实例包括水滑石和氢氧化铋。离子捕集剂可以单独使用或以两种以上组合使用。
半导体背面用膜2可例如通过利用以下常规方法形成,所述常规方法包括将热固性树脂组分例如环氧树脂和如果需要的热塑性树脂组分例如丙烯酸类树脂和任选的溶剂以及其它添加剂混合以制备树脂组合物,然后将其成形为膜状层。具体地,例如,作为半导体背面用膜的膜状层(粘合剂层)能够通过以下方法形成,所述方法为包括将树脂组合物施涂于切割带的压敏粘合剂层32上的方法;包括将树脂组合物施涂于适当的隔离膜(例如,剥离纸)上以形成树脂层(或粘合剂层),然后将其转移(转换)至压敏粘合剂层32上的方法;或者类似的方法。在这点上,树脂组合物可以是溶液或分散液。
此外,在半导体背面用膜2由包含热固性树脂组分例如环氧树脂的树脂组合物形成的情况下,在将半导体背面用膜2施涂于半导体晶片前的阶段,该膜处于所述热固性树脂组分未固化或部分固化的状态中。在该情况下,在将它施涂至半导体晶片后(具体地,通常,当在倒装芯片接合步骤中将包封材料固化时),半导体背面用膜中的热固性树脂组分完全或几乎完全固化。
如上所述,由于即使当半导体背面用膜2包含热固性树脂时,该膜也处于热固性树脂组分未固化或部分固化的状态,因此半导体背面用膜2的凝胶分数没有特别限定,但例如在50重量%以下(0重量%-50重量%)的范围内适当选择并优选30重量%以下(0-30重量%),特别优选10重量%以下(0-10重量%)。半导体背面用膜2的凝胶分数可以通过以下测量方法测量。
<凝胶分数测量方法>
从半导体背面用膜2中取样约0.1g样品,并精确称重(样品重量),将样品包裹在网型片(mesh-type sheet)中后,将它在室温下在约50ml甲苯中浸渍1星期。此后,从甲苯中取出溶剂不溶性物质(网型片中的内容物),并在130℃下干燥约2小时,将干燥后的溶剂不溶性物质称重(浸渍并干燥后的重量),然后根据下述表达式(a)计算凝胶分数(重量%)。
凝胶分数(重量%)=[(浸渍并干燥后的重量)/(样品重量)]×100
(a)
半导体背面用膜2的凝胶分数能够通过树脂组分的种类和含量以及交联剂的种类和含量,除此之外的加热温度和加热时间等来控制。
本发明中,在半导体背面用膜2为由含热固性树脂组分例如环氧树脂的树脂组合物形成的膜状制品的情况下,可以有效地显示对半导体晶片的紧密粘合性。
此外,由于在半导体晶片的切割步骤中使用切割水,半导体背面用膜2吸湿,从而在某些情况下具有常规状态以上的水含量。当在仍保持如此高的水含量下进行倒装芯片接合时,水蒸气残留在半导体背面用膜2和半导体晶片或其加工体(半导体)之间的粘合界面处,并有时产生浮起(lifting)。因此,通过将半导体背面用膜2构造为在其各表面设置具有高透水性的芯材料的结构,水蒸气扩散,由此能够避免该问题。从这样的观点,可以将其中半导体背面用膜2形成于芯材料(core material)的一个表面或两个表面上的多层结构用作半导体背面用膜。芯材料的实例包括膜(例如,聚酰亚胺膜、聚酯膜、聚对苯二甲酸乙二酯膜、聚萘二甲酸乙二酯膜、聚碳酸酯膜等)、用玻璃纤维或塑料无纺纤维增强的树脂基板,硅基板和玻璃基板。
半导体背面用膜2的厚度(在层压膜的情况下的总厚度)不特别限定,但是可以为例如适当地选自约2μm至200μm的范围。另外,厚度优选约4μm至160μm,更优选约6μm至100μm,并特别优选约10μm至80μm。
在半导体背面用膜2是层压多层的层压膜的情况下(在半导体背面用膜具有层压层的形式的情况下),作为层压层的形式,例如可以示例由晶片粘合层和激光标识层组成的层压形式。另外,在晶片粘合层和激光标识层之间,可以设置其它层(中间层、遮光层、补强层、着色层、基材层、电磁波屏蔽层、导热层、压敏粘合剂层等)。在这点上,晶片粘合层是显示对晶片的优异紧密粘合性(粘合性能)的层并且是与晶片背面接触的层。另一方面,激光标识层是显示优异激光标识性的层并且是在半导体芯片的背面上激光标识时利用的层。
优选地,半导体背面用膜2用隔离膜(剥离衬垫)(在图中未示出)保护。隔离膜具有作为用于保护半导体背面用膜直至其实际使用的保护材料的功能。此外,在半导体背面用切割带集成膜1中,隔离膜可以进一步用作将半导体背面用膜2转移至切割带基材的压敏粘合剂层32上的支承基材。当将半导体晶片粘贴至半导体背面用切割带集成膜1的半导体背面用膜上时,将隔离膜剥离。作为隔离膜,还能够使用聚乙烯或聚丙烯膜以及其表面用脱模剂例如氟类脱模剂或长链烷基丙烯酸酯类脱模剂涂布的塑料膜(例如,聚对苯二甲酸乙二酯)或纸等。隔离膜可通过常规已知的方法形成。此外,隔离膜的厚度等不特别限定。
在半导体背面用膜2没有层压切割带3的情况下,半导体背面用膜2可以与一个在其两侧具有剥离层的隔离膜一起卷起成为卷形物(roll),在所述卷形物中,所述膜2用在其两个表面上具有剥离层的隔离膜保护;或者所述膜2用在其至少一个表面上具有剥离层的隔离膜保护。
(切割带)
切割带3包括基材31和形成于基材31上的压敏粘合剂层32。因而,切割带3具有层压基材31和压敏粘合剂层32的构造是足够的。基材(支承基材)31能够用作压敏粘合剂层32等的支承材料。基材31优选具有放射线透过性。作为基材31,例如,可使用合适的薄材料,例如纸类基材如纸;纤维类基材如织物、无纺布、毡和网;金属类基材如金属箔和金属板;塑料基材如塑料膜和片;橡胶类基材如橡胶片;发泡体(foamed body)如发泡片;及其层压体[特别地,塑料类材料与其它基材的层压体,塑料膜(或片)彼此的层压体等]。在本发明中,作为基材,可适合地使用塑料基材如塑料膜和片。该塑料材料的原料实例包括烯属树脂如聚乙烯(PE)、聚丙烯(PP)和乙烯-丙烯共聚物;使用乙烯作为单体组分的共聚物,如乙烯-乙酸乙烯酯共聚物(EVA)、离聚物(ionomer)树脂、乙烯-(甲基)丙烯酸共聚物,和乙烯-(甲基)丙烯酸酯(无规,交替)共聚物;聚酯如聚对苯二甲酸乙二酯(PET)、聚萘二甲酸乙二酯(PEN)和聚对苯二甲酸丁二醇酯(PBT);丙烯酸类树脂;聚氯乙烯(PVC);聚氨酯;聚碳酸酯;聚苯硫醚(PPS);酰胺类树脂如聚酰胺(尼龙)和全芳族聚酰胺(whole aromaticpolyamides)(芳族聚酰胺);聚醚醚酮(PEEK);聚酰亚胺;聚醚酰亚胺;聚偏二氯乙烯;ABS(丙烯腈-丁二烯-苯乙烯共聚物);纤维素类树脂;硅酮树脂;和氟化树脂。
另外,基材31的材料包括聚合物如前述树脂的交联材料。塑料膜可在不拉伸的情况下使用或者需要时可在进行单轴或双轴拉伸处理后使用。根据通过拉伸处理等赋予热收缩性的树脂片,在切割后通过基材31的热收缩减小压敏粘合剂层32和半导体背面用膜2之间的粘合面积,因而能够有利于半导体芯片的回收。
为了提高与邻接层的紧密粘合性和保持性等,可在基材31的表面上实施常规使用的表面处理,例如根据化学或物理方法的氧化处理如铬酸盐处理、臭氧暴露、火焰暴露、暴露于高压电击或电离辐射(ionized radiation)处理,或用底漆剂(undercoating agent)的涂布处理。
作为基材31,可适当选择和使用相同种类或不同种类的材料,需要时,可将几种材料共混并使用。此外,为了赋予基材31以抗静电能力,可在基材31上形成由金属、合金或其氧化物组成的厚度为约30至500埃的导电性物质的气相沉积层。基材31可为单层或其两层以上的多层。
基材31的厚度(在层压层的情况下为总厚度)没有特别限定,可依赖于强度、挠性及预期的用途等适当选择。例如,厚度通常为1,000μm以下(例如1μm至1,000μm),优选10μm至500μm,进一步优选20μm至300μm,特别地优选约30μm至200μm,但不限于此。
此外,在不损害本发明的优点等的范围内,基材31可包含各种添加剂(着色剂、填料、增塑剂、防老剂、抗氧化剂、表面活性剂、阻燃剂等)。
压敏粘合剂层32由压敏粘合剂形成并具有压敏粘合性。没有具体规定,压敏粘合剂可以适当地选自已知的压敏粘合剂。具体地,作为压敏粘合剂,例如具有上述特性的那些适当地选自已知的压敏粘合剂如丙烯酸类压敏粘合剂、橡胶类压敏粘合剂、乙烯基烷基醚类压敏粘合剂、硅酮类压敏粘合剂、聚酯类压敏粘合剂、聚酰胺类压敏粘合剂、聚氨酯类压敏粘合剂、氟类压敏粘合剂、苯乙烯二烯嵌段共聚物类压敏粘合剂,和通过将具有不高于200℃的熔点的热熔融性树脂引入到上述压敏粘合剂制备的蠕变特性改善的压敏粘合剂(例如,参见JP-A56-61468、JP-A-61-174857、JP-A-63-17981、JP-A-56-13040,引入此处以作参考),并在此使用。作为压敏粘合剂,在此也可使用的是照射固化性压敏粘合剂(或能量射线固化性压敏粘合剂)和热膨胀性压敏粘合剂。在此可单独或组合使用一种或多种此类压敏粘合剂。
作为压敏粘合剂,此处优选使用的是丙烯酸类压敏粘合剂和橡胶类压敏粘合剂,并且更优选的是丙烯酸类压敏粘合剂。丙烯酸类压敏粘合剂包括一种以上(甲基)丙烯酸烷基酯作为单体组分的丙烯酸类聚合物(均聚物或共聚物)作为基础聚合物的那些。
丙烯酸类压敏粘合剂用(甲基)丙烯酸烷基酯包括,例如(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸异丙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸异丁酯、(甲基)丙烯酸仲丁酯、(甲基)丙烯酸叔丁酯、(甲基)丙烯酸戊酯、(甲基)丙烯酸己酯、(甲基)丙烯酸庚酯、(甲基)丙烯酸辛酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸异辛酯、(甲基)丙烯酸壬酯、(甲基)丙烯酸异壬酯、(甲基)丙烯酸癸酯、(甲基)丙烯酸异癸酯、(甲基)丙烯酸十一烷基酯、(甲基)丙烯酸十二烷基酯、(甲基)丙烯酸十三烷基酯、(甲基)丙烯酸十四烷基酯、(甲基)丙烯酸十五烷基酯、(甲基)丙烯酸十六烷基酯、(甲基)丙烯酸十七烷基酯、(甲基)丙烯酸十八烷基酯、(甲基)丙烯酸十九烷基酯、(甲基)丙烯酸二十烷基酯等。作为(甲基)丙烯酸烷基酯,优选其中烷基具有4至18个碳原子的那些。(甲基)丙烯酸烷基酯中,烷基可以是直链或支链的。
为了改善其内聚力、耐热性和交联性的目的,如果需要,丙烯酸类聚合物可包括相应于与上述(甲基)丙烯酸烷基酯可共聚合的任何其它单体组分(可共聚单体组分)的单元。可共聚单体组分包括,例如,含羧基单体如(甲基)丙烯酸(丙烯酸、甲基丙烯酸)、丙烯酸羧乙酯、丙烯酸羧戊酯、衣康酸、马来酸、富马酸、巴豆酸;含酸酐基团的单体例如马来酸酐、衣康酸酐;含羟基的单体例如(甲基)丙烯酸羟乙酯、(甲基)丙烯酸羟丙酯、(甲基)丙烯酸羟丁酯、(甲基)丙烯酸羟己酯、(甲基)丙烯酸羟辛酯、(甲基)丙烯酸羟癸酯、(甲基)丙烯酸羟月桂酯、甲基丙烯酸(4-羟甲基环己基)甲酯;含磺酸基的单体例如苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯酰胺-2-甲基丙磺酸、(甲基)丙烯酰胺丙磺酸、(甲基)丙烯酸磺丙酯、(甲基)丙烯酰氧基萘磺酸;含磷酸基团单体例如2-羟乙基丙烯酰磷酸酯;(N-取代的)酰胺类单体例如(甲基)丙烯酰胺、N,N-二甲基(甲基)丙烯酰胺、N-丁基(甲基)丙烯酰胺、N-羟甲基(甲基)丙烯酰胺、N-羟甲基丙烷(甲基)丙烯酰胺;(甲基)丙烯酸氨基烷基酯类单体例如(甲基)丙烯酸氨基乙酯、(甲基)丙烯酸N,N-二甲基氨基乙酯、(甲基)丙烯酸叔丁基氨基乙酯;(甲基)丙烯酸烷氧基烷基酯类单体例如(甲基)丙烯酸甲氧基乙酯、(甲基)丙烯酸乙氧基乙酯;氰基丙烯酸酯类单体例如丙烯腈、甲基丙烯腈;含环氧基丙烯酸类单体例如(甲基)丙烯酸缩水甘油酯;苯乙烯类单体例如苯乙烯、α-甲基苯乙烯;乙烯基酯类单体例如乙酸乙烯酯、丙酸乙烯酯;烯烃类单体例如异戊二烯、丁二烯、异丁烯;乙烯基醚类单体例如乙烯基醚;含氮单体例如N-乙烯基吡咯烷酮、甲基乙烯基吡咯烷酮、乙烯基吡啶、乙烯基哌啶酮、乙烯基嘧啶、乙烯基哌嗪、乙烯基吡嗪、乙烯基吡咯、乙烯基咪唑、乙烯基噁唑、乙烯基吗啉、N-乙烯基羧酸酰胺、N-乙烯基己内酰胺;马来酰亚胺类单体如N-环己基马来酰亚胺、N-异丙基马来酰亚胺、N-月桂基马来酰亚胺、N-苯基马来酰亚胺;衣康酰亚胺类单体如N-甲基衣康酰亚胺、N-乙基衣康酰亚胺、N-丁基衣康酰亚胺、N-辛基衣康酰亚胺、N-2-乙基己基衣康酰亚胺、N-环己基衣康酰亚胺、N-月桂基衣康酰亚胺;琥珀酰亚胺类单体如N-(甲基)丙烯酰氧亚甲基琥珀酰亚胺、N-(甲基)丙烯酰基-6-氧六亚甲基琥珀酰亚胺、N-(甲基)丙烯酰基-8-氧八亚甲基琥珀酰亚胺;二醇类丙烯酸酯单体如聚乙二醇(甲基)丙烯酸酯、聚丙二醇(甲基)丙烯酸酯、甲氧基乙二醇(甲基)丙烯酸酯(methoxyethylene glycol(meth)acrylate)、甲氧基聚丙二醇(甲基)丙烯酸酯(methoxypolypropylene glycol(meth)acrylate);具有杂环、卤原子或硅原子等的丙烯酸酯类单体,如(甲基)丙烯酸四氢糠酯、含氟(甲基)丙烯酸酯(fluoro(meth)acrylate)、含硅酮(甲基)丙烯酸酯(silicone(meth)acrylate);多官能单体如己二醇二(甲基)丙烯酸酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇二(甲基)丙烯酸酯、三羟甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、丙烯酸环氧酯、聚酯丙烯酸酯、氨基甲酸酯丙烯酸酯、二乙烯基苯、二(甲基)丙烯酸丁酯、二(甲基)丙烯酸己酯,等等。一种或多种这些可共聚合单体组分可单独或作为组合使用。
本发明中可用的照射固化性压敏粘合剂(或能量射线固化性压敏粘合剂)(组合物)包括,例如,含有在聚合物侧链、主链或主链末端中具有自由基反应性碳-碳双键的聚合物作为基础聚合物的内部型照射固化性压敏粘合剂,及通过将UV固化性单体组分或低聚物组分引入压敏粘合剂中的照射固化性压敏粘合剂等。这里还可以使用的热膨胀性压敏粘合剂包含例如,含有压敏粘合剂和发泡剂(特别地,热膨胀性微球)的那些。
在本发明中,在不损害本发明优点的范围内,压敏粘合剂层32可包含各种添加剂(例如,增粘剂、着色剂、增稠剂、增量剂、填料、增塑剂、防老剂、抗氧化剂、表面活性剂、交联剂等)。
可以将交联剂用于例如控制UV照射前的压敏粘合力或者用于控制UV照射后的压敏粘合力。通过使用交联剂,可实现外部交联。交联剂不特别限定,可使用已知的交联剂。具体地,作为交联剂,不仅可提及异氰酸酯类交联剂、环氧类交联剂、三聚氰胺类交联剂和过氧化物类交联剂,还提及脲类交联剂、金属醇盐类交联剂、金属螯合物类交联剂、金属盐类交联剂、碳二亚胺类交联剂、噁唑啉类交联剂、氮丙啶类交联剂和胺类交联剂等,异氰酸酯类交联剂和环氧类交联剂是合适的。交联剂可以单独使用或以两种以上组合使用。此外,交联剂的用量没有特别限制,但依赖于与待交联的基础聚合物(特别是丙烯酸类聚合物)的平衡,进一步依赖于压敏粘合剂的用途而适当确定。通常,交联剂优选共混约20重量份以下,更优选0.1重量份至10重量份,基于100重量份基础聚合物。
异氰酸酯类交联剂的实例包括低级脂肪族多异氰酸酯例如1,2-亚乙基二异氰酸酯、1,4-亚丁基二异氰酸酯和1,6-六亚甲基二异氰酸酯;脂环族多异氰酸酯例如亚环戊基二异氰酸酯、亚环己基二异氰酸酯、异氟尔酮二异氰酸酯、氢化甲苯二异氰酸酯和氢化苯二甲撑二异氰酸酯;芳香族多异氰酸酯例如2,4-甲苯二异氰酸酯、2,6-甲苯二异氰酸酯、4,4′-二苯甲烷二异氰酸酯和苯二甲撑二异氰酸酯。另外,也使用三羟甲基丙烷/甲苯二异氰酸酯三聚体加合物[商品名“COLONATE L”,由NipponPolyurethane Industry Co.,Ltd.制造]、三羟甲基丙烷/六亚甲基二异氰酸酯三聚体加合物[商品名“COLONATE HL”,由NipponPolyurethane Industry Co.,Ltd.制造]等。此外,环氧类交联剂的实例包括N,N,N′,N′-四缩水甘油基-间-苯二甲胺、二缩水甘油基苯胺、1,3-双(N,N-缩水甘油基氨甲基)环己烷、1,6-己二醇二缩水甘油醚、新戊二醇二缩水甘油醚、乙二醇二缩水甘油醚、丙二醇二缩水甘油醚、聚乙二醇二缩水甘油醚、聚丙二醇二缩水甘油醚、山梨糖醇多缩水甘油醚、甘油多缩水甘油醚、季戊四醇多缩水甘油醚、聚甘油多缩水甘油醚、脱水山梨糖醇多缩水甘油醚、三羟甲基丙烷多缩水甘油醚、己二酸二缩水甘油醚、邻苯二甲酸二缩水甘油酯、三缩水甘油基-三(2-羟乙基)异氰脲酸酯、间笨二酚二缩水甘油醚和双酚-S-二缩水甘油醚,以及还有在分子中具有两个以上环氧基团的环氧类树脂。
在本发明中代替使用交联剂或与交联剂一起使用,压敏粘合剂层可以通过用电子射线或UV射线照射而交联。
压敏粘合剂层32例如可通过利用包括混合压敏粘合剂和任选的溶剂及其它添加剂,然后将该混合物成形为片状层的通常使用的方法形成。具体地,例如,可提及以下方法:包括将包含压敏粘合剂和任选的溶剂及其它添加剂的混合物施涂至基材31上的方法;包括施涂上述混合物至适当隔离膜(如剥离纸)上以形成压敏粘合剂层32,然后将其转移(转换)至基材31上的方法;或类似方法。
没有具体规定,压敏粘合剂层32的厚度可以为,例如,5μm至300μm(优选5μm至200μm),更优选5μm至100μm,甚至更优选7μm至50μm)左右。当压敏粘合剂层32的厚度落入上述范围内时,则该层能够显示适当的压敏粘合力。压敏粘合剂层32可为单层或多层。
切割带3的压敏粘合剂层32对倒装芯片型半导体背面用膜2的粘合力(23℃,剥离角180度,剥离速率300mm/分钟)优选在0.02N/20mm至10N/20mm,更优选0.05N/20mm至5N/20mm的范围内。当粘合力为至少0.02N/20mm时,则在切割半导体晶片中,可以防止半导体芯片飞出。另一方面,当粘合力为至多10N/20mm时,则其有利于在拾取它们时半导体芯片的剥离,并且防止压敏粘合剂残留。
此外,在本发明中,可使半导体背面用膜2或半导体背面用切割带集成膜1具有抗静电功能。由于该构造,能够防止电路由于在粘合时和其剥离时静电能的产生或由于半导体晶片等通过静电能的带电导致的短路。赋予抗静电功能可通过适当的方式例如如下方法进行:添加抗静电剂或导电性物质至基材31、压敏粘合剂层32和半导体背面用膜2的方法,或在基材31上设置由电荷转移配合物(charge-transfer complex)组成的导电层或金属膜等的方法。作为这些方法,优选难以产生具有改变半导体晶片品质的风险的杂质离子的方法。为了赋予导电性和改进导热性等的目的而共混的导电性物质(导电性填料)的实例包括银、铝、金、铜、镍或导电性合金等的球形、针形或薄片形金属粉末;金属氧化物如氧化铝;无定形炭黑和石墨。然而,从不具有漏电性的观点,半导体背面用膜2优选是非导电性的。
此外,半导体背面用膜2或半导体背面用切割带集成膜1可以以缠绕成卷形物(roll)的形式形成或可以以将片(膜)层压的形式形成。例如,在膜具有卷绕成卷形物的形式的情况下,根据需要,以通过隔离膜保护半导体背面用膜2或半导体背面用膜2和切割带3的层压体的状态将该膜卷绕成卷形物,由此可将膜制备为处于卷绕成卷形物状态或形式的半导体背面用膜2或半导体背面用切割带集成膜1。在这点上,处于卷绕成卷形物状态或形式的半导体背面用切割带集成膜1可由基材31、在基材31的一个表面上形成的压敏粘合剂层32、在压敏粘合剂层32上形成的半导体背面用膜2,和在基材31的另一表面上形成的可剥离处理层(后表面处理层)构成。
此外,半导体背面用切割带集成膜1的厚度(半导体背面用膜的厚度以及包括基材31和压敏粘合剂层32的切割带的厚度的总厚度)可选自例如8μm至1,500μm的范围内,其优选20μm至850μm,更优选31μm至500μm,特别优选47μm至330μm。
如上所述,在半导体背面用切割带集成膜1中,通过控制半导体背面用膜2的厚度与切割带3的压敏粘合剂层32的厚度的比或者半导体背面用膜2的厚度与切割带的厚度(基材31和压敏粘合剂层32的总厚度)的比,能够改进切割步骤中的切割性和拾取步骤中的拾取性等,并且从半导体晶片的切割步骤至半导体芯片的倒装芯片接合步骤均能够有效利用半导体背面用切割带集成膜1。
(半导体背面用切割带集成膜的生产方法)
使用半导体背面用切割带集成膜1作为实例描述根据本实施方案的半导体背面用切割带集成膜的生产方法。首先,基材31可通过常规已知的成膜方法形成。成膜方法的实例包括压延成膜法、在有机溶剂中的流延法、在严格密闭体系中的膨胀挤出法、T-模挤出法、共挤出法和干法层压法。
接着,将压敏粘合剂组合物施涂至基材31上,并在其上干燥(和任选地在加热下交联)以形成压敏粘合剂层32。涂布方法(coating system)包括辊涂、丝网涂布(screen coating)和凹版涂布(gravure coating)等。压敏粘合剂组合物可直接施涂至基材31,以在基材31上形成压敏粘合剂层32;或可将压敏粘合剂组合物施涂至表面已加工以润滑的剥离片等上以在其上形成压敏粘合剂层32,可将压敏粘合剂层32转移至基材31上以在基材31上形成压敏粘合剂层32。因而,通过在基材31上形成压敏粘合剂层32制备切割带3。
另一方面,通过将用于形成半导体背面用膜2的形成材料施涂至剥离纸上以在干燥后具有规定厚度,并在规定条件下进一步干燥(在需要热固化等的情况下,如果需要,进行热处理以实现干燥),来形成涂层。通过将该涂层转移至压敏粘合剂层32上,在压敏粘合剂层32上形成半导体背面用膜2。在这点上,也可以通过将用于形成半导体背面用膜2的形成材料直接施涂到压敏粘合剂层32上,然后在规定条件下干燥(在需要热固化等的情况下,如果需要,进行热处理以实现干燥),在压敏粘合剂层32上还形成半导体背面用膜2。因此,可获得根据本发明的半导体背面用切割带集成膜1。此外,在半导体背面用膜2形成时进行热固化的情况下,重要的是进行热固化至该膜处于部分固化状态的程度。然而,优选不进行热固化。
在半导体背面用膜2没有与切割带3集成且为单独的情况下,可以以与上述半导体背面用膜2的方式相同的方式生产该膜。具体地,将用于半导体背面用膜2的形成材料施涂至剥离纸上以便干燥后具有规定厚度,然后在规定条件下干燥(任选地在加热下,如果需要热固化),以在其上形成涂层,由此生产半导体背面用膜2。
本发明的半导体背面用膜2和半导体背面用切割带集成膜1能够在包括倒装芯片连接步骤的半导体器件生产时适当使用。即,在倒装芯片安装的半导体器件生产时使用本发明的半导体背面用膜2和半导体背面用切割带集成膜1,因此以将半导体背面用膜2或半导体背面用切割带集成膜1的半导体背面用膜2粘贴至半导体芯片背面的状态或形式生产倒装芯片安装的半导体器件。因此,能够将本发明的半导体背面用膜2和半导体背面用切割带集成膜1用于倒装芯片安装的半导体器件(处于通过倒装芯片接合法将半导体芯片固定于被粘物如基板的状态或形式的半导体器件)。
(半导体晶片)
半导体晶片不特别限制,只要其为已知的或通常使用的半导体晶片即可,可在由各种材料制成的半导体晶片中适当地选择和使用。在本发明中,作为半导体晶片,可适当地使用硅晶片。
(半导体器件的生产方法)
以下将参考图2A至2D描述该实施方案的半导体器件的生产方法。图2A至2D示出其中使用上述半导体背面用切割带集成膜1的半导体器件的生产方法的截面示意图。在半导体背面用膜2没有与切割带集成且为单独的情况下,根据采用示于图2A至2D的半导体背面用切割带集成膜1的半导体器件的生产方法,使用该类型的膜也可以生产半导体器件。在该情况下,将切割带3粘贴至半导体背面用膜2的一侧,然后可将半导体背面用膜2粘贴至半导体晶片;或将半导体背面用膜2粘贴至半导体晶片之后,可以将切割带粘贴至半导体背面用膜2。
根据半导体器件生产方法,可使用半导体背面用切割带集成膜1生产半导体器件。具体地,该方法至少包括以下步骤:将半导体晶片4粘贴至半导体背面用切割带集成膜1上的步骤,切割半导体晶片4的步骤,拾取通过切割获得的半导体元件5的步骤,和将半导体元件5倒装芯片连接至被粘物6上的步骤。
(安装步骤)
首先,如图2A所示,将在半导体背面用切割带集成膜1的半导体背面用膜2上任选地设置的隔离膜适当剥落并将半导体晶片4粘贴至半导体背面用膜2上以通过粘合和保持来固定(安装步骤)。在此情况下,半导体背面用膜2处于未固化状态(包括半固化状态)。此外,将半导体背面用切割带集成膜1粘贴至半导体晶片4的背面。半导体晶片4的背面是指与电路面相对的面(也称为非电路面、非电极形成面等)。粘贴方法不特别限制,但优选通过压接的方法。压接通常在用加压装置如加压辊加压的同时进行。
(切割步骤)
接着,如图2B所示,切割半导体晶片4。从而,将半导体晶片4切断成规定尺寸并个体化(成形为小片),以生产半导体芯片5。例如,所述切割根据常规方法从半导体晶片4的电路面侧进行。此外,本步骤可采取例如称作完全切断的切断方法,该方法形成到达半导体背面用切割带集成膜1的切口(slit)。用于本步骤的切割设备没有特别限定,可使用常规已知的设备。此外,由于半导体晶片4通过具有半导体背面用膜的半导体背面用切割带集成膜1来粘合和固定,可以抑制芯片的破裂和芯片的飞散,以及还可以抑制半导体晶片4的损坏。在这点上,当半导体背面用膜2由包含环氧树脂的树脂组合物形成时,即使当将其通过切割切断时,也可抑制或防止在切断面处发生粘合剂从半导体背面用膜的粘合层挤出。结果,可抑制或防止切断面自身的再粘贴(粘连(blocking)),从而可进一步方便地进行以下要描述的拾取。
在半导体背面用切割带集成膜1扩展(expanded)的情况下,扩展可使用常规已知的扩展设备进行。所述扩展设备具有能够推动半导体背面用切割带集成膜1向下通过切割环的环形(doughnut-shaped)外环,和直径小于外环并支撑半导体背面用切割带集成膜的内环。由于该扩展步骤,可以防止相邻的半导体芯片在以下要描述的拾取步骤中通过彼此接触而损坏。
(拾取步骤)
为了收集粘合并固定至半导体背面用切割带集成膜1的半导体芯片5,如图2C所示进行半导体芯片5的拾取,以将半导体芯片5与半导体背面用膜2一起从切割带3剥离。拾取方法没有特别限定,可采用常规已知的各种方法。例如,可提及包括用针状物从半导体背面用切割带集成膜1的基材31侧向上推动各半导体芯片5,并用拾取设备拾取推起的半导体芯片5的方法。在这点上,拾取的半导体芯片5的背面用半导体背面用膜2保护。
(倒装芯片连接步骤)
如图2D所示,将拾取的半导体芯片5根据倒装芯片接合法(倒装芯片安装法)固定于被粘物如基板上。具体地,以半导体芯片5的电路面(其也称为正面、电路图案形成面或电极形成面)能够面对被粘物6这样的方式,根据常规方法将半导体芯片5固定至被粘物6。例如,在将在半导体芯片5的电路面侧形成的凸块51压向粘贴至被粘物6的连接垫的接合导电性材料(如焊料)61的同时,导电性材料熔融,以确保半导体芯片5和被粘物6之间的电连接,并从而将半导体芯片5固定至被粘物6(倒装芯片接合步骤)。在此情况下,在半导体芯片5和被粘物6之间形成间隙并且间隙距离通常可为约30μm至300μm。在将半导体芯片5倒装芯片接合(倒装芯片连接)至被粘物6之后,重要的是将半导体芯片5和被粘物6的界面以及间隙洗涤,然后通过用包封材料(如包封树脂)填充间隙以将两者密封起来。
作为被粘物6,可使用各种基板如引线框和电路板(如布线电路板)。基板的材料没有特别限定,可提及陶瓷基板和塑料基板。塑料基板的实例包括环氧基板、双马来酰亚胺三嗪基板和聚酰亚胺基板。
在倒装芯片接合步骤(倒装芯片连接步骤)中,凸块和导电性材料的材料没有特别限定,其实例包括焊料(合金)如锡-铅类金属材料、锡-银类金属材料、锡-银-铜类金属材料、锡-锌类金属材料和锡-锌-铋类金属材料,以及金类金属材料和铜类金属材料。
此外,在倒装芯片接合步骤中,将导电性材料熔融以连接半导体芯片5的电路面处的凸块和在被粘物6表面上的导电性材料。导电性材料熔融时的温度通常为约260℃(例如,250℃至300℃)。通过用环氧树脂等形成半导体背面用膜,可使本发明的半导体背面用切割带集成膜具有能够承受在倒装芯片接合步骤中的高温的耐热性。
在本步骤中,优选洗涤半导体芯片5和被粘物6之间的相对面(电极形成面)以及间隙。在洗涤时使用的洗涤液没有特别限定,其实例包括有机洗涤液和水性洗涤液。在本发明的半导体背面用切割带集成膜中的半导体背面用膜具有对洗涤液的耐溶剂性,并且对这些洗涤液基本不具有溶解性。因此,如上所述,可采用各种洗涤液作为该洗涤液,并可通过任何常规方法而无需任何特别的洗涤液实现该洗涤。
接着,进行封装步骤以封装倒装芯片接合的半导体芯片5和被粘物6之间的间隙。封装步骤使用包封树脂进行。在此情况下的封装条件不特别限制,但包封树脂的热固化通常在175℃下进行60秒至90秒。然而,在本发明中,不限于此,例如,固化可在165℃至185℃的温度下进行几分钟。通过在该步骤中的热处理,包封树脂随着热固化的进行而固化和收缩。然而,即使当由于包封树脂的固化收缩而赋予半导体芯片5以应力时,由于半导体背面用膜的拉伸贮能弹性模量为至少10GPa,因此该膜能够抵抗该应力,因而,在半导体元件没有翘曲或翘曲很少的状态下,能够获得倒装芯片接合的半导体芯片。此外,通过该步骤,半导体背面用膜2能够完全或几乎完全固化,并能够以优异地紧密粘合性粘贴至半导体元件背面。此外,即使当根据本发明的半导体背面用膜2处于未固化状态时,该膜也可在封装步骤时与包封材料一起热固化,因此不需要新添加半导体背面用膜2的热固化步骤。
包封树脂没有特别限定,只要该材料为具有绝缘性的树脂(绝缘树脂)即可,并可在已知的包封材料如包封树脂中适当选择和使用。包封树脂优选具有弹性的绝缘树脂。包封树脂的实例包括含环氧树脂的树脂组合物。作为环氧树脂,可提及以上示例的环氧树脂。此外,由包含环氧树脂的树脂组合物组成的包封树脂除了环氧树脂之外还可包含除了环氧树脂之外的热固性树脂(如酚醛树脂)或热塑性树脂。此外,也可利用酚醛树脂作为环氧树脂用固化剂,作为该酚醛树脂,可提及以上示例的酚醛树脂。
根据使用半导体背面用切割带集成膜1或半导体背面用膜2制造的半导体器件(倒装芯片安装的半导体器件),将半导体背面用膜粘贴至半导体芯片背面,因此,可以以优良的可视性实施激光标识。特别地,即使当标识方法是激光标识法时,激光标识也能够以优良的对比度实施,并可以以良好可视性地观察通过激光标识实施的各种信息(例如文字信息和图形信息)。在激光标识时,可利用已知激光标识设备。此外,作为激光器,可以利用各种激光器如气体激光器、固态激光器和液体激光器。具体地,作为气体激光器,可利用任何已知气体激光器而没有特别限制,但二氧化碳激光器(CO2激光器)和准分子激光器(ArF激光器、KrF激光器、XeC1激光器、XeF激光器等)是合适的。作为固态激光器,可利用任何已知的固态激光器而没有特别限制,但YAG激光器(如Nd:YAG激光器)和YVO4激光器是合适的。
由于使用本发明的半导体背面用切割带集成膜1或半导体背面用膜2生产的半导体器件为通过倒装芯片安装法安装的半导体器件,所以该器件与通过模片接合安装法安装的半导体器件相比具有薄型化和小型化的形状。因此,可适当采用所述半导体器件作为各种电子器件和电子部件或其材料和构件。具体地,作为利用本发明的倒装芯片安装的半导体器件的电子器件,可提及所谓的“移动电话”和“PHS”,小型计算机[如,所谓的“PDA”(手持终端),所谓的“笔记本尺寸的个人计算机”,所谓的“Net Book(商标)”和所谓的“可穿戴计算机”等],具有集成“移动电话”和计算机形式的小型电子器件,所谓的“Digital Camera(商标)”,所谓的“数码摄像机”,小型电视机,小尺寸游戏机,小型数字音频播放机,所谓的“电子记事本”,所谓的“电子词典”,用于所谓的“电子书”的电子器件终端,和移动电子器件(可携带电子器件)如小型数字型手表等。不必说,也可提及除了移动器件之外的电子器件(固定型电子器件等),例如所谓的“桌面个人计算机”、薄型电视机、用于记录和复制的电子器件(硬盘记录机(hard disk recorders)、DVD播放机等)、投影仪和微型机等。另外,电子部件或用于电子器件和电子部件的材料和构件没有特别限制,其实例包括用于所谓的“CPU”的部件和用于各种记忆器件(所谓的“存储器”、硬盘等)的构件。
实施例
以下将详细地说明性描述本发明的优选实施例。然而,本发明不限于以下实施例,除非其超出本发明的主旨。此外,除非另外说明,在各实施例中的份为重量标准。
实施例1
<倒装芯片型半导体背面用膜的制备>
基于100份环氧树脂(商品名“HP4032D”,由DIC Co.,Ltd.制造),将40份苯氧基树脂(商品名“EP4250”,由JER Co.,Ltd.制造)、129份酚醛树脂(商品名“MEH-8000”,由Meiwa ChemicalCo.,Ltd制造)、663份球形二氧化硅(商品名“SO-25R”,由Admatechs Co.Ltd.制造)、14份染料(商品名“OIL BLACK BS”,由Orient Chemical Industries Co.,Ltd.制造)和1份固化催化剂(商品名:“2PHZ-PW”,由Shikoku Chemical Co.,Ltd.制造)溶解于甲乙酮中,以制备具有固体浓度为23.6重量%的树脂组合物溶液(可将其称为“树脂组合物溶液A”)。
将该树脂组合物溶液A施涂至作为剥离衬垫(隔离膜)的已进行硅酮剥离处理的由具有厚度50μm的聚对苯二甲酸乙二酯膜组成的可剥离处理膜上,然后在130℃下干燥2分钟,以制备具有厚度(平均厚度)60μm的倒装芯片型半导体背面用膜A。
<半导体背面用切割带集成膜的制备>
使用手动辊将倒装芯片型半导体背面用膜A粘贴至切割带(商品外″V-8-T″,由Nitto Denko Co.,Ltd.制造;基材平均厚度,65μm;压敏粘合剂层的平均厚度,10μm)的压敏粘合剂层上,以制备半导体背面用切割带集成膜A。
实施例2
<倒装芯片型半导体背面用膜的制备>
基于100份环氧树脂(商品名“HP4032D”,由DIC Co.,Ltd.制造),将40份苯氧基树脂(商品名“EP4250”,由JER Co.,Ltd.制造)、129份酚醛树脂(商品名“MEH-8000”,由Meiwa ChemicalCo.,Ltd制造)、1137份球形二氧化硅(商品名“SO-25R”,由Admatechs Co.Ltd.制造)、14份染料(商品名“OIL BLACK BS”,由Orient Chemical Industries Co.,Ltd.制造)和1份固化催化剂(商品名:“2PHZ-PW”,由Shikoku Chemical Co.,Ltd.制造)溶解于甲乙酮中,以制备具有固体浓度为23.6重量%的树脂组合物溶液(可将其称为“树脂组合物溶液B”)。
将该树脂组合物溶液B施涂至作为剥离衬垫(隔离膜)的已进行硅酮剥离处理的由具有厚度50μm的聚对苯二甲酸乙二酯膜组成的可剥离处理膜上,然后在130℃下干燥2分钟,以制备具有厚度(平均厚度)60μm的倒装芯片型半导体背面用膜B。
<半导体背面用切割带集成膜的制备>
使用手动辊将倒装芯片型半导体背面用膜B粘贴至切割带(商品外″V-8-T″,由Nitto Denko Co.,Ltd.制造;基材平均厚度,65μm;压敏粘合剂层的平均厚度,10μm)的压敏粘合剂层上,以制备半导体背面用切割带集成膜B。
比较例1
<倒装芯片型半导体背面用膜的制备>
基于100份环氧树脂(商品名“HP4032D”,由DIC Co.,Ltd.制造),将40份苯氧基树脂(商品名“EP4250”,由JER Co.,Ltd.制造)、129份酚醛树脂(商品名“MEH-8000”,由Meiwa ChemicalCo.,Ltd制造)、426份球形二氧化硅(商品名“SO-25R”,由Admatechs Co.Ltd.制造)、14份染料(商品名“OIL BLACK BS”,由Orient Chemical Industries Co.,Ltd.制造)和1份固化催化剂(商品名:“2PHZ-PW”,由Shikoku Chemical Co.,Ltd.制造)溶解于甲乙酮中,以制备具有固体浓度为23.6重量%的树脂组合物溶液(可将其称为“树脂组合物溶液C”)。
将该树脂组合物溶液C施涂至作为剥离衬垫(隔离膜)的已进行硅酮剥离处理的由具有厚度50μm的聚对苯二甲酸乙二酯膜组成的可剥离处理膜上,然后在130℃下干燥2分钟,以制备具有厚度(平均厚度)80μm的倒装芯片型半导体背面用膜C。
<半导体背面用切割带集成膜的制备>
使用手动辊将倒装芯片型半导体背面用膜C粘贴至切割带(商品外″V-8-T″,由Nitto Denko Co.,Ltd.制造;基材平均厚度,65μm;压敏粘合剂层的平均厚度,10μm)的压敏粘合剂层上,以制备半导体背面用切割带集成膜C。
(热固化前后的拉伸贮能弹性模量)
使用切割刀,将在实施例和比较例中制备的半导体背面用切割带集成膜A-C切成各自具有长度30mm和宽度2mm的带状样品。使用拉伸试验机(TA Instrument′s RSAIII),将样品以3℃/min的加热速率从-50℃加热至250℃,并测量其在室温25℃下的拉伸贮能弹性模量。
此外,将在实施例和比较例中制备的半导体背面用切割带集成膜A-C以与上述相同的方式切成带状样品,并将该样品通过在165℃下加热2小时热固化。热固化后的样品在与上述相同的条件下分析,并测量其在室温25℃下的拉伸贮能弹性模量。
(半导体封装的翘曲度)
测量半导体封装的翘曲度,从而确定其中的半导体芯片是否翘曲。
具体地,首先,将隔离膜从半导体背面用切割带集成膜剥离,然后在70℃下将半导体晶片(具有直径为8英寸和厚度为100μm的硅镜面晶片)在加压下粘贴至半导体背面用膜。此外,切割半导体晶片。所述切割用以完全切断,从而提供各自具有10mm见方尺寸的芯片。粘贴条件和切割条件如下。
[粘贴条件]
粘贴设备:商品名“MA-3000III”,由Nitto Seiki Co.,Ltd.制造
粘贴速度:10mm/分钟
粘贴压力:0.15MPa
粘贴时的阶段温度:70℃
[切割条件]
切割设备:商品名″DFD-6361″,由DISCO Corporation制造
切割环:″2-8-1″(由DISCO Corporation制造)
切割速度:30mm/秒
切割刀:
Z1:“203O-SE 27HCDD”,由DISCO Corporation制造
Z2:“203O-SE 27HCBB”,由DISCO Corporation制造
切割刀旋转速度:
Z1:40,000r/分钟
Z2:45,000r/分钟
切割方法:阶梯切割
晶片芯片尺寸:10.0mm见方
接下来,通过用针状物从半导体背面用切割带集成膜的切割带侧向上推动芯片,将通过切割获得的半导体芯片与倒装芯片型半导体背面用膜一起从压敏粘合剂层拾取。拾取条件如下。
[拾取条件]
拾取设备:商品名“SPA-300”,由Shinkawa Co.,Ltd.制造
拾取针状物的数量:9个针状物
针状物的向上推动速度:20mm/s
针状物的向上推动距离:500μm
拾取时间:1秒
切割带扩展量:3mm
接着,将半导体芯片倒装芯片接合至BT基板[使用Mitsubishi Gas Chemical′s BT树脂(双马来酰亚胺三嗪类树脂)的基板]上。在这种情况下,半导体芯片的电路面与BT基板相对,使在半导体芯片的电路面上形成的凸块与粘贴至BT基板的连接垫的连结用导电性材料(焊料)接触,并通过将温度加热至260℃在加压下将导电性材料熔融,然后冷却至室温,从而进行倒装芯片接合。此外,将作为包封树脂的底填充材料注入半导体芯片和电路板之间的间隙。底填充材料(包封材料)的厚度为20μm。其后,将其在165℃加热2小时,然后测量半导体封装的翘曲度。
翘曲度的测量如下:首先,将半导体封装以其BT基板可以面朝下的方式放置在平板上,并测量BT基板与平板分离的高度,或即测量翘曲度(μm)。对于该测量,采用的是在1.5mm/sec的测量速度下和在1g的负载下的接触型表面粗糙度仪(Veeco’sDEKTAK8)。作为测量结果,将翘曲度为200μm以上的样品认为良好(○),将翘曲度为小于200μm的那些认为差(×)。结果示于下表1中。
表1
*球形二氧化硅的添加量(重量%)为相对于要形成倒装芯片型半导体背面用膜的树脂组合物的其百分比。
(结果)
如从表1中所知晓的,确认:如在实施例1和2中,当热固化后的拉伸贮能弹性模量为热固化前的拉伸贮能弹性模量的4倍-20倍范围内时,则具有粘贴至其背面的半导体背面用膜的半导体芯片的翘曲度在每一种情况中为至少200μm,因此,从而防止半导体封装整体的翘曲。另一方面,确认:如在比较例1中,当热固化后的拉伸贮能弹性模量为热固化前的拉伸贮能弹性模量的3倍时,则具有粘贴至其背面的半导体背面用膜的半导体芯片的翘曲度小于200μm,结果,几乎不能防止半导体封装整体的翘曲。
虽然参考其具体实施方案并详细地描述了本发明,但对本领域技术人员来说显而易见的是,不背离其范围的情况下可以在其中进行各种变化和改进。
本申请基于2010年7月28日提交的日本专利申请2010-169551,将其全部内容引入此处以作参考。
Claims (8)
1.一种倒装芯片型半导体背面用膜,其要形成于倒装芯片连接至被粘物的半导体元件的背面上,
所述倒装芯片型半导体背面用膜在热固化后在25℃下的拉伸贮能弹性模量在10GPa-30GPa范围内,
其中所述倒装芯片型半导体背面用膜在热固化后在25℃下的拉伸贮能弹性模量落入其在热固化前在25℃下的拉伸贮能弹性模量的4倍-20倍范围内。
2.根据权利要求1所述的倒装芯片型半导体背面用膜,其中其在热固化前在25℃下的拉伸贮能弹性模量为0.5Gpa-7GPa。
3.根据权利要求1所述的倒装芯片型半导体背面用膜,所述倒装芯片型半导体背面用膜由树脂组合物形成,所述树脂组合物以树脂组合物的65重量%-95重量%的量包含填料。
4.一种半导体背面用切割带集成膜,其包括:切割带和层压于所述切割带上的根据权利要求1所述的倒装芯片型半导体背面用膜,
其中所述切割带包括基材和层压于所述基材上的压敏粘合剂层,以及所述倒装芯片型半导体背面用膜层压于所述压敏粘合剂层上。
5.一种半导体器件的生产方法,在所述方法中使用根据权利要求4所述的半导体背面用切割带集成膜,所述方法包括:
将半导体晶片粘贴至所述半导体背面用切割带集成膜中的倒装芯片型半导体背面用膜上,
切割所述半导体晶片以形成半导体元件,
将所述半导体元件与所述倒装芯片型半导体背面用膜一起从所述切割带的压敏粘合剂层剥离,和
将所述半导体元件倒装芯片连接至被粘物上。
6.根据权利要求5所述的半导体器件的生产方法,其中所述倒装芯片连接包括将包封树脂填充入在倒装芯片接合至所述被粘物上的所述半导体元件和所述被粘物之间的间隙,接着热固化所述包封树脂。
7.根据权利要求5所述的半导体器件的生产方法,其中所述半导体晶片具有落入20μm-300μm范围内的厚度。
8.一种倒装芯片型半导体器件,其按照根据权利要求5所述的半导体器件的生产方法来生产。
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