CN102376539B - 用于制造电路的方法和电路 - Google Patents
用于制造电路的方法和电路 Download PDFInfo
- Publication number
- CN102376539B CN102376539B CN201110226944.7A CN201110226944A CN102376539B CN 102376539 B CN102376539 B CN 102376539B CN 201110226944 A CN201110226944 A CN 201110226944A CN 102376539 B CN102376539 B CN 102376539B
- Authority
- CN
- China
- Prior art keywords
- semiconductor chip
- wiring layer
- circuit
- chip
- plane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 57
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 239000004065 semiconductor Substances 0.000 claims abstract description 121
- 239000004020 conductor Substances 0.000 claims abstract description 48
- 239000000463 material Substances 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims description 30
- 238000005516 engineering process Methods 0.000 claims description 13
- 230000008569 process Effects 0.000 claims description 10
- 238000002347 injection Methods 0.000 claims description 4
- 239000007924 injection Substances 0.000 claims description 4
- 239000004744 fabric Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 15
- 238000000465 moulding Methods 0.000 description 13
- 238000005538 encapsulation Methods 0.000 description 11
- 230000008901 benefit Effects 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000012858 packaging process Methods 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 239000002131 composite material Substances 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000004804 winding Methods 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 241001261858 Alsodes Species 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000019771 cognition Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00301—Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/19—Manufacturing methods of high density interconnect preforms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/20—Structure, shape, material or disposition of high density interconnect preforms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6661—High-frequency adaptations for passive devices
- H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/241—Disposition
- H01L2224/24135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/24137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/10—Inductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Integrated Circuits (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102010039156.5 | 2010-08-10 | ||
DE102010039156A DE102010039156A1 (de) | 2010-08-10 | 2010-08-10 | Verfahren zum Herstellen einer elektrischen Schaltung und elektrische Schaltung |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102376539A CN102376539A (zh) | 2012-03-14 |
CN102376539B true CN102376539B (zh) | 2019-05-14 |
Family
ID=44898808
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110226944.7A Expired - Fee Related CN102376539B (zh) | 2010-08-10 | 2011-08-09 | 用于制造电路的方法和电路 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20120038065A1 (it) |
CN (1) | CN102376539B (it) |
DE (1) | DE102010039156A1 (it) |
FR (1) | FR2963849B1 (it) |
IT (1) | ITMI20111486A1 (it) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8952489B2 (en) * | 2012-10-09 | 2015-02-10 | Infineon Technologies Ag | Semiconductor package and method for fabricating the same |
JP5987696B2 (ja) * | 2013-01-09 | 2016-09-07 | 富士通株式会社 | 半導体装置の製造方法 |
TWI515843B (zh) * | 2013-12-16 | 2016-01-01 | 南茂科技股份有限公司 | 晶片封裝結構 |
US20160240452A1 (en) * | 2015-02-18 | 2016-08-18 | Semiconductor Components Industries, Llc | Semiconductor packages with sub-terminals and related methods |
US10181449B1 (en) * | 2017-09-28 | 2019-01-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor structure |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1210602A (zh) * | 1996-02-12 | 1999-03-10 | 大卫·芬恩 | 与导线接触用的方法和设备 |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL6714336A (it) | 1967-10-21 | 1969-04-23 | ||
TW262595B (it) * | 1993-11-17 | 1995-11-11 | Ikeda Takeshi | |
US5717243A (en) * | 1996-04-24 | 1998-02-10 | Harris Corporation | Integrated circuit with an improved inductor structure and method of fabrication |
DE19632117C1 (de) * | 1996-08-08 | 1997-12-18 | Siemens Ag | Datenträger zur kontaktlosen Übertragung von elektrischen Signalen |
JPH10193849A (ja) * | 1996-12-27 | 1998-07-28 | Rohm Co Ltd | 回路チップ搭載カードおよび回路チップモジュール |
US5936299A (en) * | 1997-03-13 | 1999-08-10 | International Business Machines Corporation | Substrate contact for integrated spiral inductors |
JP2000332155A (ja) * | 1999-03-12 | 2000-11-30 | Sony Corp | 半導体装置及びその製造方法 |
WO2001006558A1 (fr) * | 1999-07-16 | 2001-01-25 | Matsushita Electric Industrial Co., Ltd. | Emballage de dispositifs a semi-conducteurs et leur procede de fabrication |
WO2001026910A1 (en) * | 1999-10-08 | 2001-04-19 | Dai Nippon Printing Co., Ltd. | Non-contact data carrier and ic chip |
JP4776752B2 (ja) * | 2000-04-19 | 2011-09-21 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US6838773B2 (en) * | 2000-06-21 | 2005-01-04 | Hitachi Maxell, Ltd. | Semiconductor chip and semiconductor device using the semiconductor chip |
AU2001293304A1 (en) * | 2000-09-19 | 2002-04-02 | Nanopierce Technologies, Inc. | Method for assembling components and antennae in radio frequency identification devices |
JP2002299523A (ja) * | 2001-03-30 | 2002-10-11 | Toshiba Corp | 半導体パッケージ |
TWI233172B (en) * | 2003-04-02 | 2005-05-21 | Siliconware Precision Industries Co Ltd | Non-leaded semiconductor package and method of fabricating the same |
TWI361479B (en) * | 2003-08-28 | 2012-04-01 | Gct Semiconductor Inc | Integrated circuit package having inductance loop formed from a bridge interconnect |
US7808090B2 (en) * | 2004-09-09 | 2010-10-05 | Semiconductor Energy Laboratory Co., Ltd. | Wireless chip |
JP2006108496A (ja) * | 2004-10-07 | 2006-04-20 | Hitachi Maxell Ltd | 半導体装置 |
JP4703300B2 (ja) * | 2005-07-20 | 2011-06-15 | 富士通セミコンダクター株式会社 | 中継基板及び当該中継基板を備えた半導体装置 |
US7932590B2 (en) * | 2006-07-13 | 2011-04-26 | Atmel Corporation | Stacked-die electronics package with planar and three-dimensional inductor elements |
DE102006058068B4 (de) * | 2006-12-07 | 2018-04-05 | Infineon Technologies Ag | Halbleiterbauelement mit Halbleiterchip und passivem Spulen-Bauelement sowie Verfahren zu dessen Herstellung |
JP4870584B2 (ja) * | 2007-01-19 | 2012-02-08 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP5005427B2 (ja) * | 2007-05-25 | 2012-08-22 | 日本メクトロン株式会社 | 多層プリント配線板の製造方法 |
US8237259B2 (en) * | 2007-06-13 | 2012-08-07 | Infineon Technologies Ag | Embedded chip package |
US7986023B2 (en) * | 2007-09-17 | 2011-07-26 | Infineon Technologies Ag | Semiconductor device with inductor |
US7816792B2 (en) * | 2007-09-14 | 2010-10-19 | Infineon Technologies Ag | Semiconductor device with conductive interconnect |
US8164158B2 (en) * | 2009-09-11 | 2012-04-24 | Stats Chippac, Ltd. | Semiconductor device and method of forming integrated passive device |
US8241952B2 (en) * | 2010-02-25 | 2012-08-14 | Stats Chippac, Ltd. | Semiconductor device and method of forming IPD in fan-out level chip scale package |
-
2010
- 2010-08-10 DE DE102010039156A patent/DE102010039156A1/de not_active Ceased
-
2011
- 2011-08-03 IT IT001486A patent/ITMI20111486A1/it unknown
- 2011-08-05 FR FR1157179A patent/FR2963849B1/fr not_active Expired - Fee Related
- 2011-08-09 CN CN201110226944.7A patent/CN102376539B/zh not_active Expired - Fee Related
- 2011-08-09 US US13/206,271 patent/US20120038065A1/en not_active Abandoned
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1210602A (zh) * | 1996-02-12 | 1999-03-10 | 大卫·芬恩 | 与导线接触用的方法和设备 |
Also Published As
Publication number | Publication date |
---|---|
FR2963849A1 (fr) | 2012-02-17 |
US20120038065A1 (en) | 2012-02-16 |
FR2963849B1 (fr) | 2018-01-19 |
ITMI20111486A1 (it) | 2012-02-11 |
DE102010039156A1 (de) | 2012-02-16 |
CN102376539A (zh) | 2012-03-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103715181B (zh) | 半导体封装及其制造方法 | |
CN104701193B (zh) | 具有片状重分布结构的电子组件 | |
US20180063948A1 (en) | Fan-out wafer level packages having preformed embedded ground plane connections | |
CN102870175B (zh) | 硅基功率电感 | |
US20170092567A1 (en) | Microelectronic packages having mold-embedded traces and methods for the production thereof | |
US8567051B2 (en) | Process for the vertical interconnection of 3D electronic modules by vias | |
CN101136397B (zh) | 电子部件模块及其制造方法 | |
CN102148089B (zh) | 用于集成电感器的系统和方法 | |
US8338924B2 (en) | Substrate for integrated circuit package with selective exposure of bonding compound and method of making thereof | |
CN102376539B (zh) | 用于制造电路的方法和电路 | |
US20150262931A1 (en) | Microelectronic packages having mold-embedded traces and methods for the production thereof | |
CN108987380A (zh) | 半导体封装件中的导电通孔及其形成方法 | |
US7888179B2 (en) | Semiconductor device including a semiconductor chip which is mounted spaning a plurality of wiring boards and manufacturing method thereof | |
CN104078192A (zh) | 电子部件及其制造方法 | |
JP2013535107A5 (it) | ||
CN110010553A (zh) | 形成超高密度嵌入式半导体管芯封装的半导体器件和方法 | |
CN105230132A (zh) | 包括降低热膨胀系数(cte)并减小翘曲的无机材料的基板 | |
CN102157393A (zh) | 扇出高密度封装方法 | |
CN208767298U (zh) | 传感器封装 | |
US8513786B2 (en) | Pre-bonded substrate for integrated circuit package and method of making the same | |
CN105659379B (zh) | 具有嵌入式管芯的模制引线框架封装 | |
CN109817589A (zh) | 对芯片实现电磁屏蔽的封装结构及方法 | |
WO2014063287A1 (en) | Wire tail connector for a semiconductor device | |
CN102867615A (zh) | 低构形高功率电感器 | |
US20150084171A1 (en) | No-lead semiconductor package and method of manufacturing the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190514 Termination date: 20200809 |
|
CF01 | Termination of patent right due to non-payment of annual fee |