CN102362227B - 曝光设备、曝光方法和加工装置的方法 - Google Patents

曝光设备、曝光方法和加工装置的方法 Download PDF

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Publication number
CN102362227B
CN102362227B CN201080011781.4A CN201080011781A CN102362227B CN 102362227 B CN102362227 B CN 102362227B CN 201080011781 A CN201080011781 A CN 201080011781A CN 102362227 B CN102362227 B CN 102362227B
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CN
China
Prior art keywords
light
optical system
pattern
deflecting
mask
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Expired - Fee Related
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CN201080011781.4A
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English (en)
Chinese (zh)
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CN102362227A (zh
Inventor
木内彻
水谷英夫
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Nikon Corp
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Nikon Corp
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Publication of CN102362227A publication Critical patent/CN102362227A/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN201080011781.4A 2009-03-13 2010-03-05 曝光设备、曝光方法和加工装置的方法 Expired - Fee Related CN102362227B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US20258009P 2009-03-13 2009-03-13
US61/202,580 2009-03-13
US12/692,443 2010-01-22
US12/692,443 US8264666B2 (en) 2009-03-13 2010-01-22 Exposure apparatus, exposure method, and method of manufacturing device
PCT/JP2010/054163 WO2010104162A1 (en) 2009-03-13 2010-03-05 Exposure apparatus, exposure method, and method of manufacturing device

Publications (2)

Publication Number Publication Date
CN102362227A CN102362227A (zh) 2012-02-22
CN102362227B true CN102362227B (zh) 2014-06-18

Family

ID=42169502

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080011781.4A Expired - Fee Related CN102362227B (zh) 2009-03-13 2010-03-05 曝光设备、曝光方法和加工装置的方法

Country Status (6)

Country Link
US (1) US8264666B2 (enExample)
JP (1) JP5534176B2 (enExample)
KR (1) KR20110137309A (enExample)
CN (1) CN102362227B (enExample)
TW (1) TWI453547B (enExample)
WO (1) WO2010104162A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5451175B2 (ja) * 2009-05-15 2014-03-26 サンエー技研株式会社 露光装置
US9348462B2 (en) * 2012-06-13 2016-05-24 Maxim Integrated Products, Inc. Gesture detection and recognition based upon measurement and tracking of light intensity ratios within an array of photodetectors
WO2014010274A1 (ja) * 2012-07-13 2014-01-16 株式会社ニコン 基板処理装置、及びデバイス製造方法
KR101973349B1 (ko) 2012-09-14 2019-04-26 가부시키가이샤 니콘 기판 처리 장치 및 디바이스 제조 방법
TWI683345B (zh) * 2012-11-06 2020-01-21 日商尼康股份有限公司 偏光分束器、使用該偏光分束器之曝光裝置、以及元件製造方法
KR101988818B1 (ko) * 2013-06-14 2019-06-12 가부시키가이샤 니콘 기판 처리 장치, 디바이스 제조 방법 및 노광 방법
WO2015060972A1 (en) * 2013-10-22 2015-04-30 Applied Materials, Inc. Roll to roll mask-less lithography with active alignment
CN110297403B (zh) * 2014-09-04 2023-07-28 株式会社尼康 处理系统
GB2530768B (en) * 2014-10-01 2019-07-17 Kratos Analytical Ltd Method and apparatuses relating to cleaning an ion source
CN108919610B (zh) * 2015-02-27 2021-02-02 株式会社尼康 基板处理装置及元件制造方法
JP6723831B2 (ja) * 2016-06-01 2020-07-15 株式会社オーク製作所 露光装置
CN109031899A (zh) * 2018-09-29 2018-12-18 苏州源卓光电科技有限公司 一种高分辨率高效率投影光刻成像系统及曝光方法
DE102022200539A1 (de) 2022-01-18 2022-11-17 Carl Zeiss Smt Gmbh Optisches System für die Projektionslithographie

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US5652645A (en) 1995-07-24 1997-07-29 Anvik Corporation High-throughput, high-resolution, projection patterning system for large, flexible, roll-fed, electronic-module substrates
RU2084941C1 (ru) 1996-05-06 1997-07-20 Йелстаун Корпорейшн Н.В. Адаптивный оптический модуль
US5923403A (en) * 1997-07-08 1999-07-13 Anvik Corporation Simultaneous, two-sided projection lithography system
TW448487B (en) * 1997-11-22 2001-08-01 Nippon Kogaku Kk Exposure apparatus, exposure method and manufacturing method of device
JP3376935B2 (ja) * 1999-01-25 2003-02-17 ウシオ電機株式会社 帯状ワークの露光装置
JP4307813B2 (ja) 2001-11-14 2009-08-05 株式会社リコー 光偏向方法並びに光偏向装置及びその光偏向装置の製造方法並びにその光偏向装置を具備する光情報処理装置及び画像形成装置及び画像投影表示装置及び光伝送装置
US6900915B2 (en) 2001-11-14 2005-05-31 Ricoh Company, Ltd. Light deflecting method and apparatus efficiently using a floating mirror
EP1324136A1 (en) * 2001-12-28 2003-07-02 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
KR100545297B1 (ko) * 2002-06-12 2006-01-24 에이에스엠엘 네델란즈 비.브이. 리소그래피장치 및 디바이스 제조방법
EP1620350A1 (en) 2003-04-24 2006-02-01 Metconnex Canada Inc. A micro-electro-mechanical-system two dimensional mirror with articulated suspension structures for high fill factor arrays
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JP4542495B2 (ja) 2005-10-19 2010-09-15 株式会社目白プレシジョン 投影露光装置及びその投影露光方法
KR20080103564A (ko) 2006-02-16 2008-11-27 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
JP4929762B2 (ja) 2006-03-03 2012-05-09 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
JP5362259B2 (ja) * 2008-05-14 2013-12-11 大日本スクリーン製造株式会社 画像記録装置
JP5487981B2 (ja) * 2009-01-30 2014-05-14 株式会社ニコン 露光方法及び装置、並びにデバイス製造方法
JP5397748B2 (ja) * 2009-02-25 2014-01-22 株式会社ニコン 露光装置、走査露光方法、およびデバイス製造方法

Also Published As

Publication number Publication date
JP2010217877A (ja) 2010-09-30
KR20110137309A (ko) 2011-12-22
WO2010104162A1 (en) 2010-09-16
US20100265483A1 (en) 2010-10-21
JP5534176B2 (ja) 2014-06-25
US8264666B2 (en) 2012-09-11
TWI453547B (zh) 2014-09-21
TW201035698A (en) 2010-10-01
CN102362227A (zh) 2012-02-22

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