CN102362227B - 曝光设备、曝光方法和加工装置的方法 - Google Patents

曝光设备、曝光方法和加工装置的方法 Download PDF

Info

Publication number
CN102362227B
CN102362227B CN201080011781.4A CN201080011781A CN102362227B CN 102362227 B CN102362227 B CN 102362227B CN 201080011781 A CN201080011781 A CN 201080011781A CN 102362227 B CN102362227 B CN 102362227B
Authority
CN
China
Prior art keywords
light
optical system
deflecting
pattern
lens group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201080011781.4A
Other languages
English (en)
Chinese (zh)
Other versions
CN102362227A (zh
Inventor
木内彻
水谷英夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of CN102362227A publication Critical patent/CN102362227A/zh
Application granted granted Critical
Publication of CN102362227B publication Critical patent/CN102362227B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN201080011781.4A 2009-03-13 2010-03-05 曝光设备、曝光方法和加工装置的方法 Expired - Fee Related CN102362227B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US20258009P 2009-03-13 2009-03-13
US61/202,580 2009-03-13
US12/692,443 2010-01-22
US12/692,443 US8264666B2 (en) 2009-03-13 2010-01-22 Exposure apparatus, exposure method, and method of manufacturing device
PCT/JP2010/054163 WO2010104162A1 (en) 2009-03-13 2010-03-05 Exposure apparatus, exposure method, and method of manufacturing device

Publications (2)

Publication Number Publication Date
CN102362227A CN102362227A (zh) 2012-02-22
CN102362227B true CN102362227B (zh) 2014-06-18

Family

ID=42169502

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080011781.4A Expired - Fee Related CN102362227B (zh) 2009-03-13 2010-03-05 曝光设备、曝光方法和加工装置的方法

Country Status (6)

Country Link
US (1) US8264666B2 (enExample)
JP (1) JP5534176B2 (enExample)
KR (1) KR20110137309A (enExample)
CN (1) CN102362227B (enExample)
TW (1) TWI453547B (enExample)
WO (1) WO2010104162A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5451175B2 (ja) * 2009-05-15 2014-03-26 サンエー技研株式会社 露光装置
US9348462B2 (en) * 2012-06-13 2016-05-24 Maxim Integrated Products, Inc. Gesture detection and recognition based upon measurement and tracking of light intensity ratios within an array of photodetectors
WO2014010274A1 (ja) * 2012-07-13 2014-01-16 株式会社ニコン 基板処理装置、及びデバイス製造方法
KR101861904B1 (ko) 2012-09-14 2018-05-28 가부시키가이샤 니콘 기판 처리 장치 및 디바이스 제조 방법
KR101979979B1 (ko) * 2012-11-06 2019-05-17 가부시키가이샤 니콘 편광 빔 스플리터, 기판 처리 장치, 디바이스 제조 시스템 및 디바이스 제조 방법
KR102072956B1 (ko) * 2013-06-14 2020-02-03 가부시키가이샤 니콘 주사 노광 장치
CN106933073A (zh) * 2013-10-22 2017-07-07 应用材料公司 具有主动对准的卷对卷无掩模光刻
CN110297403B (zh) * 2014-09-04 2023-07-28 株式会社尼康 处理系统
GB2530768B (en) * 2014-10-01 2019-07-17 Kratos Analytical Ltd Method and apparatuses relating to cleaning an ion source
CN110794651B (zh) * 2015-02-27 2021-07-09 株式会社尼康 图案描绘装置
JP6723831B2 (ja) * 2016-06-01 2020-07-15 株式会社オーク製作所 露光装置
CN109031899A (zh) * 2018-09-29 2018-12-18 苏州源卓光电科技有限公司 一种高分辨率高效率投影光刻成像系统及曝光方法
DE102022200539A1 (de) 2022-01-18 2022-11-17 Carl Zeiss Smt Gmbh Optisches System für die Projektionslithographie

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5652645A (en) 1995-07-24 1997-07-29 Anvik Corporation High-throughput, high-resolution, projection patterning system for large, flexible, roll-fed, electronic-module substrates
RU2084941C1 (ru) 1996-05-06 1997-07-20 Йелстаун Корпорейшн Н.В. Адаптивный оптический модуль
US5923403A (en) * 1997-07-08 1999-07-13 Anvik Corporation Simultaneous, two-sided projection lithography system
TW448487B (en) * 1997-11-22 2001-08-01 Nippon Kogaku Kk Exposure apparatus, exposure method and manufacturing method of device
JP3376935B2 (ja) * 1999-01-25 2003-02-17 ウシオ電機株式会社 帯状ワークの露光装置
US6900915B2 (en) 2001-11-14 2005-05-31 Ricoh Company, Ltd. Light deflecting method and apparatus efficiently using a floating mirror
JP4307813B2 (ja) 2001-11-14 2009-08-05 株式会社リコー 光偏向方法並びに光偏向装置及びその光偏向装置の製造方法並びにその光偏向装置を具備する光情報処理装置及び画像形成装置及び画像投影表示装置及び光伝送装置
EP1324136A1 (en) * 2001-12-28 2003-07-02 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
TWI298825B (en) * 2002-06-12 2008-07-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7095546B2 (en) 2003-04-24 2006-08-22 Metconnex Canada Inc. Micro-electro-mechanical-system two dimensional mirror with articulated suspension structures for high fill factor arrays
WO2004094301A1 (en) 2003-04-24 2004-11-04 Metconnex Canada Inc. A micro-electro-mechanical-system two dimensional mirror with articulated suspension structures for high fill factor arrays
US7292308B2 (en) * 2004-03-23 2007-11-06 Asml Holding N.V. System and method for patterning a flexible substrate in a lithography tool
CN100339754C (zh) * 2004-04-28 2007-09-26 友达光电股份有限公司 应用于反射式平面显示器的反射电极的制作方法及光罩
JP4335114B2 (ja) 2004-10-18 2009-09-30 日本碍子株式会社 マイクロミラーデバイス
WO2006082738A1 (ja) * 2005-02-03 2006-08-10 Nikon Corporation オプティカルインテグレータ、照明光学装置、露光装置、および露光方法
US7738081B2 (en) * 2005-05-06 2010-06-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method utilizing a flat panel display handler with conveyor device and substrate handler
JP4542495B2 (ja) 2005-10-19 2010-09-15 株式会社目白プレシジョン 投影露光装置及びその投影露光方法
EP1986224A4 (en) 2006-02-16 2012-01-25 Nikon Corp EXPOSURE APPARATUS, EXPOSURE METHOD, AND DEVICE MANUFACTURING METHOD
JP4929762B2 (ja) 2006-03-03 2012-05-09 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
JP5362259B2 (ja) * 2008-05-14 2013-12-11 大日本スクリーン製造株式会社 画像記録装置
JP5487981B2 (ja) * 2009-01-30 2014-05-14 株式会社ニコン 露光方法及び装置、並びにデバイス製造方法
JP5397748B2 (ja) * 2009-02-25 2014-01-22 株式会社ニコン 露光装置、走査露光方法、およびデバイス製造方法

Also Published As

Publication number Publication date
JP5534176B2 (ja) 2014-06-25
US8264666B2 (en) 2012-09-11
TWI453547B (zh) 2014-09-21
CN102362227A (zh) 2012-02-22
WO2010104162A1 (en) 2010-09-16
KR20110137309A (ko) 2011-12-22
JP2010217877A (ja) 2010-09-30
TW201035698A (en) 2010-10-01
US20100265483A1 (en) 2010-10-21

Similar Documents

Publication Publication Date Title
CN102362227B (zh) 曝光设备、曝光方法和加工装置的方法
JP5500454B2 (ja) オプティカルインテグレータ、照明光学装置、露光装置、露光方法、およびデバイス製造方法
JP4998803B2 (ja) 露光装置、デバイス製造方法、および露光方法
WO2007100081A1 (ja) 露光方法及び装置、並びにデバイス製造方法
WO2008007633A1 (en) Illuminating optical apparatus, exposure apparatus and device manufacturing method
JP4784746B2 (ja) 照明光学装置、投影露光装置、投影光学系、及びデバイス製造方法
KR100904024B1 (ko) 인코히런트 방사선을 생성하는 반사 루프 시스템
US8072580B2 (en) Maskless exposure apparatus and method of manufacturing substrate for display using the same
JP5397748B2 (ja) 露光装置、走査露光方法、およびデバイス製造方法
JP5326928B2 (ja) 照明光学系、露光装置、およびデバイス製造方法
KR102072956B1 (ko) 주사 노광 장치
JP5360379B2 (ja) 投影光学系、露光装置、およびデバイス製造方法
WO2011010560A1 (ja) 照明光学系、露光装置、およびデバイス製造方法
JP5515323B2 (ja) 投影光学装置、露光装置、およびデバイス製造方法
JP4883482B2 (ja) 照明光学装置、露光装置、およびデバイス製造方法
HK1165869A (en) Exposure apparatus, exposure method, and method of manufacturing device
JP2011075595A (ja) 露光装置、露光方法、およびデバイス製造方法
JP5459482B2 (ja) 送光光学系、照明光学系、露光装置、およびデバイス製造方法
WO2012017783A1 (ja) 伝送光学系、照明光学系、露光装置、及びデバイス製造方法
JP2011222841A (ja) 空間光変調ユニット、照明光学系、露光装置、およびデバイス製造方法
JP2010199562A (ja) 投影光学系、投影方法、露光装置、およびデバイス製造方法
JP5604813B2 (ja) 照明光学系、露光装置、およびデバイス製造方法
JP2010199561A (ja) 露光装置、露光方法、およびデバイス製造方法
JP2014107309A (ja) 伝送光学系、照明光学系、露光装置、およびデバイス製造方法
HK1124965A (en) Exposure device, device-manufacturing method, and exposing method

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
REG Reference to a national code

Ref country code: HK

Ref legal event code: DE

Ref document number: 1165869

Country of ref document: HK

C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20140618

Termination date: 20160305

CF01 Termination of patent right due to non-payment of annual fee
REG Reference to a national code

Ref country code: HK

Ref legal event code: WD

Ref document number: 1165869

Country of ref document: HK