TWI453547B - An exposure apparatus, an exposure method, and an element manufacturing method - Google Patents

An exposure apparatus, an exposure method, and an element manufacturing method Download PDF

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Publication number
TWI453547B
TWI453547B TW099107186A TW99107186A TWI453547B TW I453547 B TWI453547 B TW I453547B TW 099107186 A TW099107186 A TW 099107186A TW 99107186 A TW99107186 A TW 99107186A TW I453547 B TWI453547 B TW I453547B
Authority
TW
Taiwan
Prior art keywords
light
substrate
pattern
optical system
lens group
Prior art date
Application number
TW099107186A
Other languages
English (en)
Chinese (zh)
Other versions
TW201035698A (en
Inventor
木內徹
水谷英夫
Original Assignee
尼康股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 尼康股份有限公司 filed Critical 尼康股份有限公司
Publication of TW201035698A publication Critical patent/TW201035698A/zh
Application granted granted Critical
Publication of TWI453547B publication Critical patent/TWI453547B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • H10P72/7604—

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW099107186A 2009-03-13 2010-03-12 An exposure apparatus, an exposure method, and an element manufacturing method TWI453547B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US20258009P 2009-03-13 2009-03-13
US12/692,443 US8264666B2 (en) 2009-03-13 2010-01-22 Exposure apparatus, exposure method, and method of manufacturing device

Publications (2)

Publication Number Publication Date
TW201035698A TW201035698A (en) 2010-10-01
TWI453547B true TWI453547B (zh) 2014-09-21

Family

ID=42169502

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099107186A TWI453547B (zh) 2009-03-13 2010-03-12 An exposure apparatus, an exposure method, and an element manufacturing method

Country Status (6)

Country Link
US (1) US8264666B2 (enExample)
JP (1) JP5534176B2 (enExample)
KR (1) KR20110137309A (enExample)
CN (1) CN102362227B (enExample)
TW (1) TWI453547B (enExample)
WO (1) WO2010104162A1 (enExample)

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JP5451175B2 (ja) * 2009-05-15 2014-03-26 サンエー技研株式会社 露光装置
US9348462B2 (en) * 2012-06-13 2016-05-24 Maxim Integrated Products, Inc. Gesture detection and recognition based upon measurement and tracking of light intensity ratios within an array of photodetectors
JP6137182B2 (ja) * 2012-07-13 2017-05-31 株式会社ニコン 基板処理装置、及びデバイス製造方法
WO2014041941A1 (ja) 2012-09-14 2014-03-20 株式会社ニコン 基板処理装置及びデバイス製造方法
JP6540027B2 (ja) * 2012-11-06 2019-07-10 株式会社ニコン 基板処理装置
JP6344387B2 (ja) * 2013-06-14 2018-06-20 株式会社ニコン 基板処理装置及びデバイス製造方法
EP3061120A4 (en) * 2013-10-22 2017-06-28 Applied Materials, Inc. Roll to roll mask-less lithography with active alignment
CN108663913B (zh) * 2014-09-04 2019-09-24 株式会社尼康 元件制造方法
GB2530768B (en) * 2014-10-01 2019-07-17 Kratos Analytical Ltd Method and apparatuses relating to cleaning an ion source
CN110794651B (zh) * 2015-02-27 2021-07-09 株式会社尼康 图案描绘装置
JP6723831B2 (ja) * 2016-06-01 2020-07-15 株式会社オーク製作所 露光装置
CN109031899A (zh) * 2018-09-29 2018-12-18 苏州源卓光电科技有限公司 一种高分辨率高效率投影光刻成像系统及曝光方法
DE102022200539A1 (de) 2022-01-18 2022-11-17 Carl Zeiss Smt Gmbh Optisches System für die Projektionslithographie

Citations (3)

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US5652645A (en) * 1995-07-24 1997-07-29 Anvik Corporation High-throughput, high-resolution, projection patterning system for large, flexible, roll-fed, electronic-module substrates
TW449527B (en) * 1999-01-25 2001-08-11 Ushio Electric Inc Aligner for belt-like work
EP1986224A1 (en) * 2006-02-16 2008-10-29 Nikon Corporation Exposure apparatus, exposing method, and device manufacturing method

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RU2084941C1 (ru) 1996-05-06 1997-07-20 Йелстаун Корпорейшн Н.В. Адаптивный оптический модуль
US5923403A (en) * 1997-07-08 1999-07-13 Anvik Corporation Simultaneous, two-sided projection lithography system
TW448487B (en) * 1997-11-22 2001-08-01 Nippon Kogaku Kk Exposure apparatus, exposure method and manufacturing method of device
JP4307813B2 (ja) 2001-11-14 2009-08-05 株式会社リコー 光偏向方法並びに光偏向装置及びその光偏向装置の製造方法並びにその光偏向装置を具備する光情報処理装置及び画像形成装置及び画像投影表示装置及び光伝送装置
US6900915B2 (en) * 2001-11-14 2005-05-31 Ricoh Company, Ltd. Light deflecting method and apparatus efficiently using a floating mirror
EP1324136A1 (en) * 2001-12-28 2003-07-02 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
KR100545297B1 (ko) * 2002-06-12 2006-01-24 에이에스엠엘 네델란즈 비.브이. 리소그래피장치 및 디바이스 제조방법
JP2006524349A (ja) 2003-04-24 2006-10-26 メトコネックス カナダ インコーポレイティッド 高フィルファクターアレイのための、連接式サスペンション構造を有する微小電子機械システム２次元ミラー
US7095546B2 (en) * 2003-04-24 2006-08-22 Metconnex Canada Inc. Micro-electro-mechanical-system two dimensional mirror with articulated suspension structures for high fill factor arrays
US7292308B2 (en) * 2004-03-23 2007-11-06 Asml Holding N.V. System and method for patterning a flexible substrate in a lithography tool
CN100339754C (zh) * 2004-04-28 2007-09-26 友达光电股份有限公司 应用于反射式平面显示器的反射电极的制作方法及光罩
JP4335114B2 (ja) 2004-10-18 2009-09-30 日本碍子株式会社 マイクロミラーデバイス
EP1811547A4 (en) * 2005-02-03 2010-06-02 Nikon Corp OPTICAL INTEGRATOR, OPTICAL LIGHTING DEVICE, EXPOSURE DEVICE AND EXPOSURE METHOD
US7738081B2 (en) * 2005-05-06 2010-06-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method utilizing a flat panel display handler with conveyor device and substrate handler
JP4542495B2 (ja) 2005-10-19 2010-09-15 株式会社目白プレシジョン 投影露光装置及びその投影露光方法
JP4929762B2 (ja) 2006-03-03 2012-05-09 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
JP5362259B2 (ja) * 2008-05-14 2013-12-11 大日本スクリーン製造株式会社 画像記録装置
JP5487981B2 (ja) * 2009-01-30 2014-05-14 株式会社ニコン 露光方法及び装置、並びにデバイス製造方法
JP5397748B2 (ja) * 2009-02-25 2014-01-22 株式会社ニコン 露光装置、走査露光方法、およびデバイス製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5652645A (en) * 1995-07-24 1997-07-29 Anvik Corporation High-throughput, high-resolution, projection patterning system for large, flexible, roll-fed, electronic-module substrates
TW449527B (en) * 1999-01-25 2001-08-11 Ushio Electric Inc Aligner for belt-like work
EP1986224A1 (en) * 2006-02-16 2008-10-29 Nikon Corporation Exposure apparatus, exposing method, and device manufacturing method

Also Published As

Publication number Publication date
KR20110137309A (ko) 2011-12-22
JP5534176B2 (ja) 2014-06-25
US8264666B2 (en) 2012-09-11
WO2010104162A1 (en) 2010-09-16
CN102362227B (zh) 2014-06-18
TW201035698A (en) 2010-10-01
CN102362227A (zh) 2012-02-22
JP2010217877A (ja) 2010-09-30
US20100265483A1 (en) 2010-10-21

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