CN102338990B - 基板处理装置和基板处理方法 - Google Patents

基板处理装置和基板处理方法 Download PDF

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Publication number
CN102338990B
CN102338990B CN201110204680.5A CN201110204680A CN102338990B CN 102338990 B CN102338990 B CN 102338990B CN 201110204680 A CN201110204680 A CN 201110204680A CN 102338990 B CN102338990 B CN 102338990B
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China
Prior art keywords
substrate
wafer
periphery
exposure
maintaining part
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CN201110204680.5A
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English (en)
Chinese (zh)
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CN102338990A (zh
Inventor
古闲法久
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
    • G01B11/303—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces using photoelectric detection means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
    • G01B11/306—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces for measuring evenness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0616—Monitoring of warpages, curvatures, damages, defects or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/235—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising optical enhancement of defects or not-directly-visible states
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N2021/9563—Inspecting patterns on the surface of objects and suppressing pattern images
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N2021/95638—Inspecting patterns on the surface of objects for PCB's

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN201110204680.5A 2010-07-16 2011-07-13 基板处理装置和基板处理方法 Active CN102338990B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010161713A JP5479253B2 (ja) 2010-07-16 2010-07-16 基板処理装置、基板処理方法、プログラム及びコンピュータ記憶媒体
JP2010-161713 2010-07-16

Publications (2)

Publication Number Publication Date
CN102338990A CN102338990A (zh) 2012-02-01
CN102338990B true CN102338990B (zh) 2014-11-26

Family

ID=45466654

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201110204680.5A Active CN102338990B (zh) 2010-07-16 2011-07-13 基板处理装置和基板处理方法

Country Status (5)

Country Link
US (1) US8730317B2 (https=)
JP (1) JP5479253B2 (https=)
KR (1) KR101605698B1 (https=)
CN (1) CN102338990B (https=)
TW (1) TWI487897B (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5006122B2 (ja) * 2007-06-29 2012-08-22 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP5128918B2 (ja) 2007-11-30 2013-01-23 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP5160204B2 (ja) * 2007-11-30 2013-03-13 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP5179170B2 (ja) 2007-12-28 2013-04-10 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP5001828B2 (ja) 2007-12-28 2012-08-15 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP6308958B2 (ja) * 2015-02-25 2018-04-11 東京エレクトロン株式会社 基板処理装置、基板処理方法、プログラム及びコンピュータ記憶媒体
JP6244329B2 (ja) * 2015-05-12 2017-12-06 東京エレクトロン株式会社 基板の検査方法、基板処理システム及びコンピュータ記憶媒体
JP6444909B2 (ja) * 2016-02-22 2018-12-26 東京エレクトロン株式会社 基板処理方法、基板処理装置及びコンピュータ読み取り可能な記録媒体
JP6617050B2 (ja) * 2016-02-22 2019-12-04 東京エレクトロン株式会社 基板撮像装置
JP2018036235A (ja) * 2016-09-02 2018-03-08 株式会社Ｓｃｒｅｅｎホールディングス 基板検査装置、基板処理装置、基板検査方法および基板処理方法
WO2018146981A1 (ja) * 2017-02-07 2018-08-16 東京エレクトロン株式会社 成膜システム、成膜方法及びコンピュータ記憶媒体
TWI786116B (zh) * 2017-06-05 2022-12-11 日商東京威力科創股份有限公司 基板處理系統之處理條件設定方法、基板處理系統及記憶媒體
EP3413339B1 (en) 2017-06-08 2023-05-24 Brooks Automation (Germany) GmbH Inspection system and method of inspection for substrate containers
KR102760744B1 (ko) * 2018-04-27 2025-02-03 도쿄엘렉트론가부시키가이샤 기판 처리 시스템 및 기판 처리 방법
JP7105135B2 (ja) * 2018-08-17 2022-07-22 東京エレクトロン株式会社 処理条件補正方法及び基板処理システム
KR102162187B1 (ko) 2018-08-31 2020-10-07 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
JP7153521B2 (ja) * 2018-10-05 2022-10-14 東京エレクトロン株式会社 基板処理装置及び検査方法
JP7090005B2 (ja) * 2018-10-05 2022-06-23 東京エレクトロン株式会社 基板処理装置及び検査方法
KR102191836B1 (ko) * 2019-04-30 2020-12-18 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR20250083585A (ko) * 2019-05-08 2025-06-10 도쿄엘렉트론가부시키가이샤 접합 장치, 접합 시스템 및 접합 방법
KR102270936B1 (ko) * 2019-06-17 2021-07-01 세메스 주식회사 기판 처리 방법 및 기판 처리 장치
CN111723591B (zh) * 2020-05-22 2021-03-30 杭州长川科技股份有限公司 晶圆id读取装置
CN120972450A (zh) * 2024-05-15 2025-11-18 盛美半导体设备(上海)股份有限公司 基板处理装置及方法

Citations (4)

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US6004047A (en) * 1997-03-05 1999-12-21 Tokyo Electron Limited Method of and apparatus for processing photoresist, method of evaluating photoresist film, and processing apparatus using the evaluation method
CN1596368A (zh) * 2001-11-30 2005-03-16 国际商业机器公司 图形轮廓的检查装置和检查方法、曝光装置
CN101515115A (zh) * 2008-02-18 2009-08-26 株式会社Orc制作所 曝光装置的基板支撑机构
CN101614680A (zh) * 2008-06-26 2009-12-30 株式会社阿迪泰克工程 缺陷检测装置及方法

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JP3067331B2 (ja) * 1991-10-30 2000-07-17 株式会社ニコン 顕微鏡
JP3468755B2 (ja) * 2001-03-05 2003-11-17 石川島播磨重工業株式会社 液晶駆動基板の検査装置
JP3853685B2 (ja) * 2002-03-28 2006-12-06 大日本スクリーン製造株式会社 基板処理装置
TW200702656A (en) * 2005-05-25 2007-01-16 Olympus Corp Surface defect inspection apparatus
JP2007240519A (ja) * 2006-02-08 2007-09-20 Tokyo Electron Ltd 欠陥検査方法、欠陥検査装置及びコンピュータプログラム
JP2009117541A (ja) * 2007-11-05 2009-05-28 Tokyo Electron Ltd 基板検査方法、基板検査装置及び記憶媒体
JP2009281836A (ja) * 2008-05-21 2009-12-03 Olympus Corp 基板観察装置、基板観察方法、制御装置、およびプログラム
US8798932B2 (en) * 2008-10-31 2014-08-05 The Invention Science Fund I, Llc Frozen compositions and methods for piercing a substrate

Patent Citations (4)

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US6004047A (en) * 1997-03-05 1999-12-21 Tokyo Electron Limited Method of and apparatus for processing photoresist, method of evaluating photoresist film, and processing apparatus using the evaluation method
CN1596368A (zh) * 2001-11-30 2005-03-16 国际商业机器公司 图形轮廓的检查装置和检查方法、曝光装置
CN101515115A (zh) * 2008-02-18 2009-08-26 株式会社Orc制作所 曝光装置的基板支撑机构
CN101614680A (zh) * 2008-06-26 2009-12-30 株式会社阿迪泰克工程 缺陷检测装置及方法

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Also Published As

Publication number Publication date
US20120013730A1 (en) 2012-01-19
US8730317B2 (en) 2014-05-20
JP2012023289A (ja) 2012-02-02
KR20120008447A (ko) 2012-01-30
JP5479253B2 (ja) 2014-04-23
TWI487897B (zh) 2015-06-11
CN102338990A (zh) 2012-02-01
KR101605698B1 (ko) 2016-03-23
TW201229501A (en) 2012-07-16

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