CN102332505A - Method for reducing internal resistance of thin film solar cell - Google Patents
Method for reducing internal resistance of thin film solar cell Download PDFInfo
- Publication number
- CN102332505A CN102332505A CN201110091931A CN201110091931A CN102332505A CN 102332505 A CN102332505 A CN 102332505A CN 201110091931 A CN201110091931 A CN 201110091931A CN 201110091931 A CN201110091931 A CN 201110091931A CN 102332505 A CN102332505 A CN 102332505A
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- China
- Prior art keywords
- azo
- rete
- doped zno
- internal resistance
- solar cell
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 26
- 239000010409 thin film Substances 0.000 title claims abstract description 25
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 102
- 239000011787 zinc oxide Substances 0.000 claims abstract description 51
- 239000011521 glass Substances 0.000 claims abstract description 17
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 239000005357 flat glass Substances 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 11
- 239000010408 film Substances 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 4
- 239000010410 layer Substances 0.000 abstract 8
- 239000002355 dual-layer Substances 0.000 abstract 3
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000001172 regenerating effect Effects 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention relates to a method for reducing internal resistance of a thin film solar cell, which solves the technical problem that the conversion efficiency is reduced because the internal resistance of the solar cell is great. A dual-layer aluminum-doped zinc oxide (AZO) film is additionally arranged between a substrate and a solar cell layer. The technical scheme is that the method for reducing the internal resistance of the thin film solar cell comprises the steps that transparent conducting oxide (TCO) glass is used as original glass and a buffer layer for reducing contact resistance of the TCO glass and the solar cell layer is prepared. The method is characterized in that the buffer layer prepared in the method is a dual-layer AZO film layer deposited on the TCO original glass. The method has the keys that, by additionally arranging the dual-layer AZO film layer between the substrate and the solar cell layer, the problem of great contact resistance between the TCO glass and the cell layer is solved and the conversion efficiency of the solar cell is improved.
Description
Technical field
The present invention relates to a kind of method that reduces the thin-film solar cells internal resistance, specially refer to a kind of preparation method who improves the preceding electrode TCO rete of Thinfilm solar cell assembly conversion efficiency.
Background technology
Traditional fuel energy reduces day by day, and the harm that environment is caused becomes increasingly conspicuous.The whole world also has 2,000,000,000 people to can not get normal energy supply simultaneously.In this time, the whole world has all been invested regenerative resource to sight, hopes that regenerative resource can change human energy resource structure, keeps long-range sustainable development.Solar energy forms the focus of paying attention to into people among numerous new forms of energy with its exclusive advantage.Abundant solar radiant energy is an important energy, is the energy inexhaustible, nexhaustible, pollution-free, cheap, that the mankind can freely utilize.At present, monocrystalline silicon and polysilicon are that the solar cell of basic transfer medium still dominates, but the material requirements of manufacturing cell panel has limited the reduction of its production cost.The thin-film solar cells of amorphous silicon is high with its production efficiency, and is with low cost, is easy to realize that advantage such as large-scale production more and more receives people's attention.But the thin-film solar cells conversion efficiency is on the low side to hamper the development of thin-film solar cells always.So the technological improvement of any effective raising thin-film solar cells conversion efficiency all becomes the focus of thin-film solar cells research work.Open circuit voltage, short circuit current etc. are the key factors that influences solar energy converting efficient, and the internal resistance size of battery directly has influence on the size of short circuit current, and the internal resistance of thin film solar depends mainly on the contact resistance between the different retes.So the contact resistance that how to reduce between the different retes is the key point of major issue, also is the direction that people study all the time.
Summary of the invention
The present invention will solve the technical problem of solar cell because of the big reduction conversion efficiency of internal resistance; Designed a kind of method that reduces the thin-film solar cells internal resistance; Through between substrate and solar cell layer, setting up double-deck Al-Doped ZnO film; Solve the big problem of contact resistance between TCO glass and the battery layers, improved the conversion efficiency of solar cell.
The present invention for realizing the technical scheme that goal of the invention adopts is; A kind of method that reduces the thin-film solar cells internal resistance; Comprise in the implementation step of above method: with TCO glass is that former, preparation reduce the resilient coating of TCO glass and solar cell layer contact resistance; Key is: the resilient coating in this method is by being deposited on the first Al-Doped ZnO rete on the TCO original sheet glass and being deposited on double-deck Al-Doped ZnO (AZO) rete that the second Al-Doped ZnO rete on the first Al-Doped ZnO rete is formed; In said double-deck Al-Doped ZnO (AZO) rete, in said double-deck Al-Doped ZnO (AZO) rete:
In first Al-Doped ZnO (AZO) rete, Al
2O
3Content be 1～3%, all the other are zinc oxide, thicknesses of layers is 800～1200nm;
In second Al-Doped ZnO (AZO) rete, Al
2O
3Content be 2～6%, all the other are zinc oxide, thicknesses of layers is 10～100nm.
Key of the present invention is: through between substrate and solar cell layer, setting up double-deck Al-Doped ZnO film; TCO glass is the AZO rete; With solar battery element structure is that worker's function of silicon materials is different, in order to solve the problem of different worker's functions couplings, utilizes the high AZO that mixes to produce high compound contact in the middle of making two interfaces; Therefore solve the big problem of contact resistance between TCO glass and the battery layers, improved the conversion efficiency of solar cell.
The invention has the beneficial effects as follows: the present invention has following advantage: technology is simple; With low cost, be easy to large tracts of land production; Effectively reduce the internal resistance of thin-film solar cells, improve short circuit current, thereby put forward the conversion efficiency of thin-film solar cells.
Embodiment
A kind of method that reduces the thin-film solar cells internal resistance; Comprise in the implementation step of above method: with TCO glass is that former, preparation reduce the resilient coating of TCO glass and solar cell layer contact resistance; Its key is: the resilient coating in this method is by being deposited on the first Al-Doped ZnO rete on the TCO original sheet glass and being deposited on double-deck Al-Doped ZnO (AZO) rete that the second Al-Doped ZnO rete on the first Al-Doped ZnO rete is formed; In said double-deck Al-Doped ZnO (AZO) rete, in said double-deck Al-Doped ZnO (AZO) rete:
In first Al-Doped ZnO (AZO) rete, A
l2O
3Content be 1～3%, all the other are zinc oxide, thicknesses of layers is 800～1200nm;
In second Al-Doped ZnO (AZO) rete, Al
2O
3Content be 2～6%, all the other are zinc oxide, thicknesses of layers is 10～100nm.
It is on glass that above-mentioned double-deck Al-Doped ZnO (AZO) rete is deposited on TCO by magnetron sputtering apparatus, and wherein each technological parameter is respectively:
The temperature of TCO original sheet glass is 150～350 ℃, and body vacuum degree is less than 1 * 10
-5Pa, sputtering pressure are 2～5mTorr, and the process gas of feeding is Ar and O
2, volume ratio is: Ar is 94～96%, O
2Be 4～6%, depositing the used target of double-deck Al-Doped ZnO (AZO) rete all is Al-Doped ZnO (AZO) ceramic target, in the required ceramic target of sputter ground floor Al-Doped ZnO (AZO) rete, and Al
2O
3Content be 1～3%, in the required ceramic target of sputter second layer Al-Doped ZnO (AZO) rete, Al
2O
3Content be 2～6%.More than the volume ratio of required process gas preferred: Ar is 95%, O
2Be 5%, provide 3 specific embodiments below:
In first Al-Doped ZnO (AZO) rete, Al
2O
3Content be preferably 1.8～2.2%.
In second Al-Doped ZnO (AZO) rete, Al
2O
3Content be preferably 3～5%.
First Al-Doped ZnO (AZO) thicknesses of layers is preferably 950～1050nm.
The object of the invention is realized through following scheme:
Former elder generation of washed glass is through the reactive sputtering plated film, and sputter one layer thickness is 1000nm, Al
2O
3Content be 2% AZO (Al-Doped ZnO) rete, the gas of processing that wherein feeds is argon gas and oxygen, its volume ratio is 95: 5 (Ar:O2), and then sputter one layer thickness is 10nm～100nm, Al
2O
3Content be that 3%～5% AZO (Al-Doped ZnO) rete is as resilient coating.
Adopt a kind of method that improves the thin-film solar cells conversion efficiency of the present invention, have the following advantages: technology is simple; With low cost, be easy to large tracts of land production; Effectively reduce the internal resistance of thin-film solar cells, improve short circuit current, thereby put forward the conversion efficiency of thin-film solar cells.
Claims (5)
1. method that reduces the thin-film solar cells internal resistance; Comprise in the implementation step of above method: with TCO glass is that former, preparation reduce the resilient coating of TCO glass and solar cell layer contact resistance; It is characterized in that: the resilient coating in this method is by being deposited on the first Al-Doped ZnO rete on the TCO original sheet glass and being deposited on double-deck Al-Doped ZnO (AZO) rete that the second Al-Doped ZnO rete on the first Al-Doped ZnO rete is formed; In said double-deck Al-Doped ZnO (AZO) rete, in said double-deck Al-Doped ZnO (AZO) rete:
In first Al-Doped ZnO (AZO) rete, Al
2O
3Content be 1～3%, all the other are zinc oxide, thicknesses of layers is 800～1200nm;
In second Al-Doped ZnO (AZO) rete, Al
2O
3Content be 2～6%, all the other are zinc oxide, thicknesses of layers is 10～100nm.
2. a kind of method that reduces the thin-film solar cells internal resistance according to claim 1 is characterized in that: it is on glass that described double-deck Al-Doped ZnO (AZO) rete is deposited on TCO by magnetron sputtering apparatus, and wherein each technological parameter is respectively:
The temperature of TCO original sheet glass is 150～350 ℃, and body vacuum degree is less than 1 * 10
-5Pa, sputtering pressure are 2～5mTorr, and the process gas of feeding is Ar and O
2, volume ratio is: Ar is 94～96%, O
2Be 4～6%, depositing the used target of double-deck Al-Doped ZnO (AZO) rete all is Al-Doped ZnO (AZO) ceramic target, in the required ceramic target of sputter ground floor Al-Doped ZnO (AZO) rete, and Al
2O
3Content be 1～3%, in the required ceramic target of sputter second layer Al-Doped ZnO (AZO) rete, Al
2O
3Content be 2～6%.
3. a kind of method that reduces the thin-film solar cells internal resistance according to claim 1 is characterized in that: in first Al-Doped ZnO (AZO) rete, and Al
2O
3Content be preferably 1.8～2.2%.
4. a kind of method that reduces the thin-film solar cells internal resistance according to claim 1 is characterized in that: in second Al-Doped ZnO (AZO) rete, and Al
2O
3Content be preferably 3～5%.
5. a kind of method that reduces the thin-film solar cells internal resistance according to claim 1 is characterized in that: first Al-Doped ZnO (AZO) thicknesses of layers is preferably 950～1050nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100919313A CN102332505B (en) | 2011-04-13 | 2011-04-13 | Method for reducing internal resistance of thin film solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100919313A CN102332505B (en) | 2011-04-13 | 2011-04-13 | Method for reducing internal resistance of thin film solar cell |
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| Publication Number | Publication Date |
|---|---|
| CN102332505A true CN102332505A (en) | 2012-01-25 |
| CN102332505B CN102332505B (en) | 2013-04-10 |
Family
ID=45484216
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|---|---|---|---|
| CN2011100919313A Active CN102332505B (en) | 2011-04-13 | 2011-04-13 | Method for reducing internal resistance of thin film solar cell |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102694066A (en) * | 2012-04-01 | 2012-09-26 | 东旭集团有限公司 | Method for improving photoelectric conversion efficiency of solar cell panel |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101603171A (en) * | 2009-07-29 | 2009-12-16 | 新奥光伏能源有限公司 | The chamber system and the technology thereof of the equipment of preparation nesa coating |
| CN101692357A (en) * | 2009-10-13 | 2010-04-07 | 华东师范大学 | Method for preparing pile face doped zinc oxide transparent conductive film |
| CN101748405A (en) * | 2008-11-28 | 2010-06-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Transparent conducting film and preparation method thereof, solar battery and flat panel display device |
| CN101997040A (en) * | 2009-08-13 | 2011-03-30 | 杜邦太阳能有限公司 | Process for making a multi-layer structure having transparent conductive oxide layers with textured surface and the structure made thereby |
-
2011
- 2011-04-13 CN CN2011100919313A patent/CN102332505B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101748405A (en) * | 2008-11-28 | 2010-06-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Transparent conducting film and preparation method thereof, solar battery and flat panel display device |
| CN101603171A (en) * | 2009-07-29 | 2009-12-16 | 新奥光伏能源有限公司 | The chamber system and the technology thereof of the equipment of preparation nesa coating |
| CN101997040A (en) * | 2009-08-13 | 2011-03-30 | 杜邦太阳能有限公司 | Process for making a multi-layer structure having transparent conductive oxide layers with textured surface and the structure made thereby |
| CN101692357A (en) * | 2009-10-13 | 2010-04-07 | 华东师范大学 | Method for preparing pile face doped zinc oxide transparent conductive film |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102694066A (en) * | 2012-04-01 | 2012-09-26 | 东旭集团有限公司 | Method for improving photoelectric conversion efficiency of solar cell panel |
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| CN102332505B (en) | 2013-04-10 |
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Application publication date: 20120125 Assignee: CHENGDU XUSHUANG SOLAR TECHNOLOGY Co.,Ltd. Assignor: TUNGHSU GROUP Co.,Ltd.|CHENGDU TAIYISI SOLAR TECHNOLOGY Co.,Ltd. Contract record no.: 2012990000882 Denomination of invention: Method for reducing internal resistance of thin film solar cell License type: Exclusive License Record date: 20121213 |
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Assignee: CHENGDU XUSHUANG SOLAR TECHNOLOGY Co.,Ltd. Assignor: TUNGHSU GROUP Co.,Ltd.|CHENGDU TAIYISI SOLAR TECHNOLOGY Co.,Ltd. Contract record no.: 2012990000882 Date of cancellation: 20140506 |
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Effective date of registration: 20140806 Address after: 050021 No. 94, Huitong Road, Hebei, Shijiazhuang Patentee after: TUNGHSU GROUP Co.,Ltd. Address before: 050021 No. 94, Huitong Road, Hebei, Shijiazhuang Patentee before: TUNGHSU GROUP Co.,Ltd. Patentee before: CHENGDU TAIYISI SOLAR TECHNOLOGY Co.,Ltd. |
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