CN207009459U - The silicon based hetero-junction solar cell that a kind of tow sides can generate electricity - Google Patents
The silicon based hetero-junction solar cell that a kind of tow sides can generate electricity Download PDFInfo
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- CN207009459U CN207009459U CN201720393145.1U CN201720393145U CN207009459U CN 207009459 U CN207009459 U CN 207009459U CN 201720393145 U CN201720393145 U CN 201720393145U CN 207009459 U CN207009459 U CN 207009459U
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Abstract
The silicon based hetero-junction solar cell that a kind of tow sides can generate electricity, front metal wire, positive RPD transparent conductive film layers, positive P-type non-crystalline silicon tunic layer, positive intrinsic amorphous silicon layer film layer, substrate, back side intrinsic amorphous silicon layer film layer, back side N-type non-crystalline silicon layer film layer, back side PVD transparent conductive film layers and back metal wire are from top to bottom sequentially connected, front or the back side can extinctions towards light during battery sheet packaging, contribute to the extinction of HJT cell pieces and the raising of conversion efficiency, reduce the production cost of enterprise, be advantageous to the marketing of product and the popularization of product.
Description
Technical field
It the utility model is related to a kind of solar cell, more particularly to the silicon based hetero-junction that a kind of tow sides can generate electricity
Solar cell.
Background technology
In recent years, because the production capacity of silicon chip, cell piece and component is constantly expanded, also there is substance in photovoltaic generation cost
Decline.Therefore, reducing ratio of the integrated cost (BOS) in whole photovoltaic generating system cost structure also becomes more to aggravate
Will, it means that efficient component will play most important role during system cost is reduced, because they are being provided
More BOS costs can be saved in the case of same charge.In all solar battery technologies, silicon based hetero-junction is studied
(HJT) solar cell has great importance, because it possesses high conversion efficiency (25.6%), simple in construction, process temperatures
Low (<
250 DEG C), the advantages such as processing step is few and temperature coefficient is low.
Compared with traditional p-type monocrystalline/polycrystalline solar cell, the HJT solar cells of n-type single crystalline substrate can obtain
Higher conversion efficiency, and only need seldom processing step.Meanwhile HJT have it is unique without PID (potential induction attenuation)
The more reliable and longer service life of photovoltaic module is ensure that with without LID (light-induced degradation) effect.
HJT batteries have high efficiency, technique it is simple, without irradiation cracking (LID free), no-voltage cracking (PID free),
The characteristics such as low-temperature coefficient, high generated energy, low cost of electricity-generating and double face lighting generating, are especially suitable for distributed photovoltaic application, are
One of lower generation high efficiency battery mainstream technology., can be with multi output under the reflection of light of white background using two-sided heterogeneous structure, assembly
>20% electric power., averagely can multi output 28.9% than the HJT components of one side using two-sided HJT components according to test on the spot
Electric power.
During HJT solar cells are prepared, plasma enhanced chemical vapor deposition filming equipment (PECVD,
Plasma Enhanced Chemical Vapor Deposition) determine product aspect of performance play it is most important
Role.
For the passivation layer that incidence surface is deposited for intrinsic layer (i) and in (P) layer of stacked on top boron-doping, the back side equally deposits this
Sign passivation layer (i) simultaneously stacks (n) layer of p-doped, and surface passivation layer i/p and i/n thickness may each be about 15~20nm.Then just
About 50-150nm nesa coating (TCO) on anti-two sides sputter, traditional ITO (indium tin oxide) conduct is mostly used at present
Transparent conductive film layer, the wire of tow sides can be manufactured with the mode of silk-screen low temperature silver paste on nesa coating, or adopted
The wire of incidence surface is made of the mode of copper electroforming, so just completes the making of a HJT cell piece.
The positive and negative of HJT batteries still uses materials of the ITO as nesa coating at present, but ITO work function compared with
Low (4.7) and p-type and N-type non-crystalline silicon layer (>5) differ it is larger, be unfavorable for the lifting of conversion efficiency, although ITO have it is extremely low
Resistivity and technology is quite ripe, but need the process temperatures more than more than 150 DEG C, form it into crystalline texture can obtain compared with
Good photoelectric property.But crystallization process can increase ITO surfaces roughness (>2.5nm), and high temperature process also limit it
Application space on plastic basis material, high temperature also easily hurt amorphous silicon film layer during TCO is made simultaneously.
Have the TCO such as IMO of many higher work-functions at present, IWO, ITiO etc. are published, but because surface roughness is larger and
Electrically poor, so the effect of actual sputtering thin film is unsatisfactory, the utility model proposes the still sputter on N-type non-crystalline silicon
Traditional ITO nesa coating layer, but the middle reaction equation plasma coating equipment (RPD on P-type non-crystalline silicon film layer：
Reactive Plasma Deposition) prepare with high mobility, low led in conjunction with rate and more the transparent of high-penetration rate
Electrolemma layer (Transparent
Conductive Layer, TCO), using material such as IWO, IMO, ITiO etc., to reach high work function and highly conductive
Property optimal collocation prepare TCO via low bombarding energy plasma, it is harmless to silicon chip surface, more there is obvious efficiency to carry
Ascending effect, IWO materials are made up of In2O3 and WO3, and IMO materials are made up of In2O3 and MoO3, GZO materials by ZnO and
Ga2O3 is formed.Its work function may be up to 5-6eV, and penetration is about 85%, resistivity 10-3-10-4 Ω cm scope,
And surface RMS roughness, up to 0.5nm, its conductive characteristic is similar to ITO, and material translucency and carrier transport factor are better than ITO,
It is the quite suitable new material for being developed in HJT and using.
The content of the invention
The purpose of this utility model is to provide the silicon based hetero-junction solar cell that a kind of tow sides can generate electricity, electric
During the encapsulation of pond piece front or the back side towards light can extinction, contribute to the extinction of HJT cell pieces and the raising of conversion efficiency, drop
The production cost of Di Liao enterprises, be advantageous to the marketing of product and the popularization of product.
The utility model is achieved in that it includes front metal wire, positive RPD transparent conductive film layers, positive p-type
Amorphous silicon layer film layer, positive intrinsic amorphous silicon layer film layer, substrate, back side intrinsic amorphous silicon layer film layer, back side N-type non-crystalline silicon layer film
Layer, back side PVD transparent conductive film layers, back metal wire, it is characterised in that the front metal wire, positive RPD is transparent leads
Electrolemma layer, positive P-type non-crystalline silicon tunic layer, positive intrinsic amorphous silicon layer film layer, substrate, back side intrinsic amorphous silicon layer film layer, the back of the body
Face N-type non-crystalline silicon layer film layer, back side PVD transparent conductive film layers and back metal wire are from top to bottom sequentially connected.
The front metal wire is wire mark silver paste circuit or electroforming copper wire, and the positive RPD transparent conductive film layers plate
There are IWO, IMO, ITIO or GZO film layer, the positive P-type non-crystalline silicon film layer is PECVD processing procedures, the front intrinsic amorphous silicon
Tunic layer is PECVD processing procedures, and the substrate is n type single crystal silicon piece, and the back side intrinsic amorphous silicon layer film layer is PECVD processing procedures,
The back side N-type non-crystalline silicon layer film layer is PECVD processing procedures, vacuum magnetic control sputter ito film on the back side PVD transparent conductive film layers
Layer, the back metal wire is wire mark silver paste circuit or electroforming copper wire.
When the front metal wire is wire mark silver paste circuit, its thicknesses of layers is 15-100um, resistivity<5x10-5Ω
Cm, when the front metal wire is electroforming copper wire, its thicknesses of layers is 10-50um, resistivity<5x10-5Ωcm。
When the positive RPD transparent conductive film layers are coated with IWO film layers, its thickness is 50-150nm, refractive index 2.0-
2.1, it is seen that light translucency may be up to more than 85%, resistivity<8x10-4Ω cm, the positive RPD transparent conductive film layers are coated with
During IMO film layers, its thickness is 50-150nm, refractive index 2.0-2.1, it is seen that light translucency may be up to more than 85%, resistance
Rate<8x10-4Ω cm, when the positive RPD transparent conductive film layers are coated with GZO film layers, its thickness is 50-150nm, and refractive index is
1.9-2.0, it is seen that light translucency may be up to more than 85%, resistivity<8x10-4Ωcm。
The positive P-type non-crystalline silicon tunic layer, its thickness are 5-25nm.
The positive intrinsic amorphous silicon layer film layer, its thickness are 5-25nm.
The back side intrinsic amorphous silicon layer film layer, its thickness are 5-25nm.
The back side N-type non-crystalline silicon layer film layer, its thickness are 5-25nm.
On the back side PVD transparent conductive film layers during vacuum magnetic control sputter ito film layer, its ito film thickness degree is 50-
150nm, refractive index 2.0-2.1, it is seen that light translucency may be up to more than 82%, resistivity<4x10-4Ωcm。
When the back metal wire is wire mark silver paste circuit, its thickness is 15-100um, resistivity<5x10-5Ωcm；Institute
When to state back metal wire be electroforming copper wire, its thickness is 10-50um, resistivity<5x10-5Ωcm。
It is of the present utility model to have the technical effect that：During battery sheet packaging front or the back side towards light can extinction, contribute to
The extinction of HJT cell pieces and the raising of conversion efficiency, the production cost of enterprise is reduced, be advantageous to the marketing and production of product
The popularization of product.
Brief description of the drawings
Fig. 1 is structural representation of the present utility model.
In figure, 1, front metal wire, 2, positive RPD transparent conductive film layers, 3, positive P-type non-crystalline silicon tunic layer, 4,
Positive intrinsic amorphous silicon layer film layer, 5, substrate, 6, back side intrinsic amorphous silicon layer film layer, 7, back side N-type non-crystalline silicon layer film layer, 8, the back of the body
Face PVD transparent conductive film layers, 9, back metal wire.
Embodiment
The utility model, the silicon based hetero-junction solar-electricity that a kind of tow sides can generate electricity are illustrated with reference to Fig. 1
Pond, it includes front metal wire (1), positive RPD transparent conductive film layers (2), positive P-type non-crystalline silicon tunic layer (3), front originally
Levy amorphous silicon layer film layer (4), substrate (5), back side intrinsic amorphous silicon layer film layer (6), back side N-type non-crystalline silicon layer film layer (7), the back side
PVD transparent conductive film layers (8), back metal wire (9), the front metal wire, positive RPD transparent conductive film layers, positive P
Type amorphous silicon layer film layer, positive intrinsic amorphous silicon layer film layer, substrate, back side intrinsic amorphous silicon layer film layer, back side N-type non-crystalline silicon layer
Film layer, back side PVD transparent conductive film layers and back metal wire are from top to bottom sequentially connected.
The front metal wire is wire mark silver paste circuit or electroforming copper wire, and the positive RPD transparent conductive film layers plate
There are IWO, IMO, ITIO or GZO film layer, the positive P-type non-crystalline silicon film layer is PECVD processing procedures, the front intrinsic amorphous silicon
Tunic layer is PECVD processing procedures, and the substrate is n type single crystal silicon piece, and the back side intrinsic amorphous silicon layer film layer is PECVD processing procedures,
The back side N-type non-crystalline silicon layer film layer is PECVD processing procedures, vacuum magnetic control sputter ito film on the back side PVD transparent conductive film layers
Layer, the back metal wire is wire mark silver paste circuit or electroforming copper wire.
When the front metal wire is wire mark silver paste circuit, its thicknesses of layers is 15-100um, resistivity<5x10-5Ω
Cm, when the front metal wire is electroforming copper wire, its thicknesses of layers is 10-50um, resistivity<5x10-5Ωcm。
When the positive RPD transparent conductive film layers are coated with IWO film layers, its thickness is 50-150nm, refractive index 2.0-
2.1, it is seen that light translucency may be up to more than 85%, resistivity<8x10-4Ω cm, the positive RPD transparent conductive film layers are coated with
During IMO film layers, its thickness is 50-150nm, refractive index 2.0-2.1, it is seen that light translucency may be up to more than 85%, resistance
Rate<8x10-4Ω cm, when the positive RPD transparent conductive film layers are coated with GZO film layers, its thickness is 50-150nm, and refractive index is
1.9-2.0, it is seen that light translucency may be up to more than 85%, resistivity<8x10-4Ωcm。
The positive P-type non-crystalline silicon tunic layer, its thickness are 5-25nm.
The positive intrinsic amorphous silicon layer film layer, its thickness are 5-25nm.
The back side intrinsic amorphous silicon layer film layer, its thickness are 5-25nm.
The back side N-type non-crystalline silicon layer film layer, its thickness are 5-25nm.
On the back side PVD transparent conductive film layers during vacuum magnetic control sputter ito film layer, its ito film thickness degree is 50-
150nm, refractive index 2.0-2.1, it is seen that light translucency may be up to more than 82%, resistivity<4x10-4Ωcm。
When the back metal wire is wire mark silver paste circuit, its thickness is 15-100um, resistivity<5x10-5Ωcm；Institute
When to state back metal wire be electroforming copper wire, its thickness is 10-50um, resistivity<5x10-5Ωcm。
Before plated film, substrate (5) needs to be pre-processed, including cleans, destatics, at ion beam bombardment, heat de-airing
Reason etc..
The positive intrinsic amorphous silicon layer film layer (4), back side intrinsic amorphous silicon layer film layer (6), positive P-type non-crystalline silicon tunic
Layer (3), back side N-type non-crystalline silicon layer film layer (7) (PECVD) in plasma enhanced chemical meteorology deposition apparatus, each lead into
The gases such as silane (SiH4), phosphine (PH3), trimethyl borine TMB (CH3) and H2 (Ar), it is sequentially successively complete above in substrate (5)
Film forming layer plated film, underlayer temperature are 150-500 DEG C, and positive intrinsic amorphous silicon layer film layer (4) thickness is 5-20nm, the back side is intrinsic non-
Crystal silicon layer film layer (6) thickness is 5-20nm, positive P-type non-crystalline silicon tunic layer (3) thickness is 5-20nm, back side N-type non-crystalline silicon layer
Film layer (7) thickness is 5-20nm, in plasma enhanced chemical meteorology deposition apparatus (PECVD), sequentially successively completes film layer
Plated film.
Positive RPD transparent conductive film layers (2) are coated with, using reaction equation plasma deposition apparatus, with vacuum suction system
Sputter cavity background pressure is evacuated to 0.7 × 10 by system-5-0.9×10-5After torr, using argon gas as working gas, through section
Stream valve by be passed through argon gas control sputter cavity operating pressure be 5 × 10-3Torr, it is block using high-purity IWO, IMO, ITIO, GZO
Material (purity 99.95%), material is vaporized on into positive P-type non-crystalline silicon tunic layer (3), and one layer of 50-150nm of sputter is thick above
IWO, IMO or GZO film layer, so as to complete being coated with for positive RPD transparency conducting layers (3).
The back side PVD transparency conducting layers (8) are coated with, sputter cavity background pressure is evacuated to 0.7 with vacuum-pumping system ×
10-5-0.9×10-5After torr, using argon gas as working gas, the work of argon gas control sputter cavity will be passed through through choke valve
Make pressure as 5 × 10-3Torr, using high-purity ITO target (purity 99.95%) with pulse dc power overleaf N-type non-crystalline silicon
Ito thin film layer thick one layer of 50-150nm of tunic layer (7) sputter, so as to complete being coated with for the back side PVD transparency conducting layers (8).
The making of front metal wire (1), with screen-printing machine and half tone using low temperature silver paste as material, lead positive RPD is transparent
Wire mark silver paste circuit, its thicknesses of layers are 15-100um to electrolemma layer (2) above, are completed under the low temperature environment less than 200 DEG C, its
Resistivity<5x10-5Ωcm；Or in positive RPD transparent conductive film layers (2) electroforming copper wire above by the way of plating, its
Thicknesses of layers is 10-50um, resistivity<5x10-5Ωcm。
The making of back metal wire (9), with screen-printing machine and half tone using low temperature silver paste as material, overleaf nesa coating
Wire mark silver paste circuit, its thicknesses of layers are 15-100um to layer (8) above, are completed under the low temperature environment less than 200 DEG C, its resistance
Rate<5x10-5Ωcm；Or overleaf RP D transparent conductive film layers (8) the electroforming copper wire above by the way of plating, its film layer
Thickness is 10-50um, resistivity<5x10-5Ωcm。
Complete the processing procedure of the above, that is, the HJT solar cells for completing tow sides difference processing procedure transparent conductive film layer make,
Front or the back side can use towards light during battery sheet packaging, contribute to the extinction of HJT cell pieces and the raising of conversion efficiency,
The production cost of enterprise is reduced, is advantageous to the marketing of product and the popularization of product.
Embodiment described above is only that preferred embodiment of the present utility model is described, not to this practicality
New scope is defined, and on the premise of the utility model design spirit is not departed from, those of ordinary skill in the art are to this
The various modifications and improvement that the technical scheme of utility model is made, the protection of the utility model claims book determination all should be fallen into
In the range of.
Claims (9)
1. the silicon based hetero-junction solar cell that a kind of tow sides can generate electricity, it is saturating that it includes front metal wire, positive RPD
Bright conductive film layer, positive P-type non-crystalline silicon tunic layer, positive intrinsic amorphous silicon layer film layer, substrate, back side intrinsic amorphous silicon tunic
Layer, back side N-type non-crystalline silicon layer film layer, back side PVD transparent conductive film layers, back metal wire, it is characterised in that the front gold
Belong to wire, positive RPD transparent conductive film layers, positive P-type non-crystalline silicon tunic layer, positive intrinsic amorphous silicon layer film layer, substrate, the back side
Intrinsic amorphous silicon layer film layer, back side N-type non-crystalline silicon layer film layer, back side PVD transparent conductive film layers and back metal wire by upper and
Under be sequentially connected；The front metal wire is wire mark silver paste circuit or electroforming copper wire, the positive RPD transparent conductive film layers
It is coated with IWO, IMO, ITIO or GZO film layer, the positive P-type non-crystalline silicon film layer is PECVD processing procedures, the intrinsic amorphous in front
Silicon layer film layer is PECVD processing procedures, and the substrate is n type single crystal silicon piece, and the back side intrinsic amorphous silicon layer film layer is PECVD systems
Journey, the back side N-type non-crystalline silicon layer film layer are PECVD processing procedures, and vacuum magnetic control splashes on the back side PVD transparent conductive film layers
Ito film layer is plated, the back metal wire is wire mark silver paste circuit or electroforming copper wire.
2. the silicon based hetero-junction solar cell that a kind of tow sides according to claim 1 can generate electricity, its feature exist
In when the front metal wire is wire mark silver paste circuit, its thicknesses of layers is 15-100um, resistivity<5x10-5Ω cm, institute
When to state front metal wire be electroforming copper wire, its thicknesses of layers is 10-50um, resistivity<5x10-5Ωcm。
3. the silicon based hetero-junction solar cell that a kind of tow sides according to claim 2 can generate electricity, its feature exist
In when the positive RPD transparent conductive film layers are coated with IWO film layers, its thickness is 50-150nm, refractive index 2.0-2.1, can
See that light translucency may be up to more than 85%, resistivity<8x10-4Ω cm, the positive RPD transparent conductive film layers are coated with IMO films
During layer, its thickness is 50-150nm, refractive index 2.0-2.1, it is seen that light translucency may be up to more than 85%, resistivity<
8x10-4Ω cm, when the positive RPD transparent conductive film layers are coated with GZO film layers, its thickness is 50-150nm, and refractive index is
1.9-2.0, it is seen that light translucency may be up to more than 85%, resistivity<8x10-4Ωcm。
4. the silicon based hetero-junction solar cell that a kind of tow sides according to claim 2 can generate electricity, its feature exist
In the positive P-type non-crystalline silicon tunic layer, its thickness is 5-25nm.
5. the silicon based hetero-junction solar cell that a kind of tow sides according to claim 2 can generate electricity, its feature exist
In the positive intrinsic amorphous silicon layer film layer, its thickness is 5-25nm.
6. the silicon based hetero-junction solar cell that a kind of tow sides according to claim 2 can generate electricity, its feature exist
In the back side intrinsic amorphous silicon layer film layer, its thickness is 5-25nm.
7. the silicon based hetero-junction solar cell that a kind of tow sides according to claim 2 can generate electricity, its feature exist
In the back side N-type non-crystalline silicon layer film layer, its thickness is 5-25nm.
8. the silicon based hetero-junction solar cell that a kind of tow sides according to claim 2 can generate electricity, its feature exist
In, on the back side PVD transparent conductive film layers during vacuum magnetic control sputter ito film layer, its ito film thickness degree is 50-150nm,
Refractive index is 2.0-2.1, it is seen that light translucency may be up to more than 82%, resistivity<4x10-4Ωcm。
9. the silicon based hetero-junction solar cell that a kind of tow sides according to claim 2 can generate electricity, its feature exist
In when the back metal wire is wire mark silver paste circuit, its thickness is 15-100um, resistivity<5x10-5Ωcm；The back of the body
When face plain conductor is electroforming copper wire, its thickness is 10-50um, resistivity<5x10-5Ωcm。
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108914065A (en) * | 2018-08-01 | 2018-11-30 | 研创应用材料（赣州）股份有限公司 | A kind of novel RPD polynary conductive oxide material and preparation method thereof |
| CN110416328A (en) * | 2019-06-25 | 2019-11-05 | 湖南红太阳光电科技有限公司 | A kind of HJT battery and preparation method thereof |
-
2017
- 2017-04-14 CN CN201720393145.1U patent/CN207009459U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108914065A (en) * | 2018-08-01 | 2018-11-30 | 研创应用材料（赣州）股份有限公司 | A kind of novel RPD polynary conductive oxide material and preparation method thereof |
| CN108914065B (en) * | 2018-08-01 | 2020-11-13 | 研创应用材料（赣州）股份有限公司 | Multi-element conductive oxide material for RPD and preparation method thereof |
| CN110416328A (en) * | 2019-06-25 | 2019-11-05 | 湖南红太阳光电科技有限公司 | A kind of HJT battery and preparation method thereof |
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Effective date of registration: 20200603 Address after: 341000 building 6, standard workshop, north area, Hong Kong Industrial Park, 168 Xiangjiang Avenue, Ganzhou economic and Technological Development Zone, Ganzhou City, Jiangxi Province Patentee after: Ganzhou Chuangfa Photoelectric Technology Co.,Ltd. Address before: 341001 standard workshop of North District of Hongkong Industrial Park, Ganzhou economic and Technological Development Zone, Ganzhou, Jiangxi Province Patentee before: YANCHUANG APPLIED MATERIALS (GANZHOU) Inc.,Ltd. |